MIC4421AAMTR [MICREL]

Buffer/Inverter Based MOSFET Driver, 9A, BCDMOS, PDSO8, SOIC-8;
MIC4421AAMTR
型号: MIC4421AAMTR
厂家: MICREL SEMICONDUCTOR    MICREL SEMICONDUCTOR
描述:

Buffer/Inverter Based MOSFET Driver, 9A, BCDMOS, PDSO8, SOIC-8

驱动器
文件: 总10页 (文件大小:112K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MIC4421/4422  
9A-Peak Low-Side MOSFET Driver  
Bipolar/CMOS/DMOS Process  
General Description  
Features  
• BiCMOS/DMOS Construction  
• Latch-Up Proof: Fully Isolated Process is Inherently  
Immune to Any Latch-up.  
MIC4421 and MIC4422 MOSFET drivers are rugged, effi-  
cient, and easy to use. The MIC4421 is an inverting driver,  
while the MIC4422 is a non-inverting driver.  
• Input Will Withstand Negative Swing of Up to 5V  
• Matched Rise and Fall Times............................... 25ns  
• High Peak Output Current .............................. 9A Peak  
• Wide Operating Range.............................. 4.5V to 18V  
• High Capacitive Load Drive...........................47,000pF  
• Low Delay Time ........................................... 30ns Typ.  
Both versions are capable of 9A (peak) output and can drive  
the largest MOSFETs with an improved safe operating mar-  
gin. The MIC4421/4422 accepts any logic input from 2.4V to  
V
without external speed-up capacitors or resistor net-  
S
works. Proprietary circuits allow the input to swing negative  
by as much as 5V without damaging the part. Additional  
circuits protect against damage from electrostatic discharge.  
• Logic High Input for Any Voltage from 2.4V to V  
S
• Low Equivalent Input Capacitance (typ).................7pF  
• Low Supply Current..............450µA With Logic 1 Input  
• Low Output Impedance ........................................ 1.5Ω  
MIC4421/4422 drivers can replace three or more discrete  
components, reducing PCB area requirements, simplifying  
product design, and reducing assembly cost.  
• Output Voltage Swing to Within 25mV of GND or V  
S
Modern Bipolar/CMOS/DMOS construction guarantees free-  
dom from latch-up. The rail-to-rail swing capability of CMOS/  
DMOS insures adequate gate voltage to the MOSFET dur-  
ing power up/down sequencing. Since these devices are  
fabricated on a self-aligned process, they have very low  
crossover current, run cool, use little power, and are easy to  
drive.  
Applications  
• Switch Mode Power Supplies  
• Motor Controls  
• Pulse Transformer Driver  
• Class-D Switching Amplifiers  
• Line Drivers  
• Driving MOSFET or IGBT Parallel Chip Modules  
• Local Power ON/OFF Switch  
• Pulse Generators  
Functional Diagram  
VS  
MIC4421  
INVERTING  
0.3mA  
0.1mA  
OUT  
IN  
2k  
MIC4422  
NON-INVERTING  
GND  
5-42  
April 1998  
MIC4421/4422  
Micrel  
Ordering Information  
Part No.  
Temperature Range  
Package  
8-Pin PDIP  
8-Pin PDIP  
8-Pin SOIC  
8-Pin SOIC  
5-Pin TO-220  
8-Pin PDIP  
8-Pin PDIP  
8-Pin SOIC  
8-Pin SOIC  
5-Pin TO-220  
Configuration  
Inverting  
MIC4421CN  
MIC4421BN  
MIC4421CM  
MIC4421BM  
MIC4421CT  
MIC4422CN  
MIC4422BN  
MIC4422CM  
MIC4422BM  
MIC4422CT  
0°C to +70°C  
–40°C to +85°C  
0°C to +70°C  
–40°C to +85°C  
0°C to +70°C  
0°C to +70°C  
–40°C to +85°C  
0°C to +70°C  
–40°C to +85°C  
0°C to +70°C  
Inverting  
Inverting  
Inverting  
Inverting  
Non-Inverting  
Non-Inverting  
Non-Inverting  
Non-Inverting  
Non-Inverting  
Pin Configurations  
VS  
VS  
1
8
7
6
5
IN 2  
OUT  
OUT  
GND  
3
4
NC  
5
GND  
Plastic DIP (N)  
SOIC (M)  
5
4
3
2
1
OUT  
GND  
VS  
GND  
IN  
TO-220-5 (T)  
Pin Description  
Pin Number  
TO-220-5  
Pin Number  
DIP, SOIC  
Pin Name  
Pin Function  
1
2, 4  
3, TAB  
5
2
IN  
GND  
VS  
Control Input  
4, 5  
1, 8  
6, 7  
3
Ground: Duplicate pins must be externally connected together.  
Supply Input: Duplicate pins must be externally connected together.  
Output: Duplicate pins must be externally connected together.  
Not connected.  
OUT  
NC  
April 1998  
5-43  
MIC4421/4422  
Micrel  
Absolute Maximum Ratings (Notes 1, 2 and 3)  
Operating Ratings  
Supply Voltage ..............................................................20V  
Junction Temperature ............................................... 150°C  
Ambient Temperature  
Input Voltage .................................. V + 0.3V to GND – 5V  
S
Input Current (V > V ) ............................................50 mA  
C Version ................................................... 0°C to +70°C  
B Version................................................ –40°C to +85°C  
Thermal Resistance  
IN  
S
Power Dissipation, T 25°C  
A
PDIP ....................................................................960mW  
SOIC .................................................................1040mW  
5-Pin TO-220..............................................................2W  
5-Pin TO-220 ) ..............................................10°C/W  
JC  
Power Dissipation, T  
25°C  
CASE  
5-Pin TO-220.........................................................12.5W  
Derating Factors (to Ambient)  
PDIP ................................................................7.7mW/°C  
SOIC ...............................................................8.3mW/°C  
5-Pin TO-220....................................................17mW/°C  
Storage Temperature ............................... –65°C to +150°C  
Lead Temperature (10 sec)....................................... 300°C  
Electrical Characteristics: (T = 25°C with 4.5 V V 18 V unless otherwise specified.)  
A
S
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
INPUT  
V
Logic 1 Input Voltage  
Logic 0 Input Voltage  
Input Voltage Range  
Input Current  
2.4  
1.3  
1.1  
V
V
IH  
V
0.8  
IL  
V
–5  
V +0.3  
S
V
IN  
I
0 V V V  
–10  
10  
µA  
IN  
IN  
S
OUTPUT  
V
High Output Voltage  
Low Output Voltage  
See Figure 1  
See Figure 1  
V –.025  
S
V
V
OH  
V
0.025  
1.7  
OL  
R
O
Output Resistance,  
Output High  
I
= 10 mA, V = 18 V  
S
0.6  
0.8  
9
OUT  
R
O
Output Resistance,  
Output Low  
I
= 10 mA, V = 18 V  
S
OUT  
I
Peak Output Current  
V
= 18 V (See Figure 5)  
A
A
PK  
S
I
Continuous Output Current  
2
DC  
I
Latch-Up Protection  
Withstand Reverse Current  
Duty Cycle 2%  
t 300 µs  
>1500  
mA  
R
SWITCHING TIME (Note 3)  
t
t
t
t
Rise Time  
Fall Time  
Test Figure 1, C = 10,000 pF  
L
20  
24  
15  
35  
75  
75  
60  
60  
ns  
ns  
ns  
ns  
R
Test Figure 1, C = 10,000 pF  
L
F
Delay Time  
Delay Time  
Test Figure 1  
Test Figure 1  
D1  
D2  
Power Supply  
I
Power Supply Current  
Operating Input Voltage  
V
V
= 3 V  
= 0 V  
0.4  
80  
1.5  
150  
mA  
µA  
S
IN  
IN  
V
S
4.5  
18  
V
5-44  
April 1998  
MIC4421/4422  
Micrel  
Electrical Characteristics: (Over operating temperature range with 4.5V V 18V unless otherwise specified.)  
S
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
INPUT  
V
Logic 1 Input Voltage  
Logic 0 Input Voltage  
Input Voltage Range  
Input Current  
2.4  
1.4  
1.0  
V
V
IH  
V
0.8  
IL  
V
–5  
V +0.3  
S
V
IN  
I
0V V V  
–10  
10  
µA  
IN  
IN  
S
OUTPUT  
V
High Output Voltage  
Low Output Voltage  
Figure 1  
Figure 1  
V –.025  
S
V
V
OH  
V
0.025  
3.6  
OL  
R
O
Output Resistance,  
Output High  
I
= 10mA, V = 18V  
S
0.8  
1.3  
OUT  
R
O
Output Resistance,  
Output Low  
I
= 10mA, V = 18V  
S
2.7  
OUT  
SWITCHING TIME (Note 3)  
t
t
t
t
Rise Time  
Fall Time  
Figure 1, C = 10,000pF  
L
23  
30  
20  
40  
120  
120  
80  
ns  
ns  
ns  
ns  
R
Figure 1, C = 10,000pF  
L
F
Delay Time  
Delay Time  
Figure 1  
Figure 1  
D1  
D2  
80  
POWER SUPPLY  
Power Supply Current  
I
V
V
= 3V  
= 0V  
0.6  
0.1  
3
0.2  
mA  
V
S
IN  
IN  
5
V
Operating Input Voltage  
4.5  
18  
S
NOTE 1:  
NOTE 2:  
Functional operation above the absolute maximum stress ratings is not implied.  
Static-sensitive device. Store only in conductive containers. Handling personnel and equipment should be grounded to  
prevent damage from static discharge.  
NOTE 3:  
Switching times guaranteed by design.  
Test Circuits  
VS = 18V  
VS = 18V  
0.1µF  
4.7µF  
0.1µF  
4.7µF  
0.1µF  
IN  
0.1µF  
OUT  
15000pF  
IN  
OUT  
15000pF  
MIC4421  
MIC4422  
5V  
90%  
5V  
90%  
2.5V  
2.5V  
INPUT  
INPUT  
t
PW 0.5µs  
t
PW 0.5µs  
10%  
0V  
10%  
0V  
tPW  
tPW  
tD1  
tF  
tD2  
tR  
tD1  
tF  
tR  
tD2  
VS  
90%  
VS  
90%  
OUTPUT  
10%  
OUTPUT  
10%  
0V  
0V  
Figure 2. Noninverting Driver Switching Time  
Figure 1. Inverting Driver Switching Time  
April 1998  
5-45  
MIC4421/4422  
Micrel  
Typical Characteristic Curves  
Rise Time  
Fall Time  
Rise and Fall Times  
vs. Supply Voltage  
vs. Supply Voltage  
vs. Temperature  
220  
220  
200  
180  
160  
140  
120  
100  
80  
60  
50  
40  
30  
20  
10  
0
CL = 10,000pF  
VS = 18V  
200  
180  
160  
140  
tFALL  
47,000pF  
47,000pF  
120  
100  
80  
60  
40  
20  
0
tRISE  
22,000pF  
10,000pF  
22,000pF  
10,000pF  
60  
40  
20  
0
-40  
0
40  
80  
120  
4
6
8
10 12 14 16 18  
4
6
8
10 12 14 16 18  
TEMPERATURE (°C)  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
Rise Time  
Fall Time  
Crossover Energy  
vs. Supply Voltage  
vs. Capacitive Load  
vs. Capacitive Load  
300  
250  
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
10-7  
10-8  
10-9  
PER TRANSITION  
5V  
5V  
10V  
10V  
18V  
18V  
0
0
100  
1000  
10k  
100k  
100  
1000  
10k  
100k  
4
6
8
10 12 14 16 18  
CAPACITIVE LOAD (pF)  
CAPACITIVE LOAD (pF)  
VOLTAGE (V)  
Supply Current  
Supply Current  
Supply Current  
vs. Capacitive Load  
vs. Capacitive Load  
vs. Capacitive Load  
220  
200  
180  
160  
140  
120  
100  
80  
150  
120  
90  
60  
30  
0
75  
60  
45  
30  
15  
0
VS = 18V  
VS = 12V  
VS = 5V  
1 MHz  
60  
1 MHz  
1 MHz  
50kHz  
50kHz  
50kHz  
40  
200kHz  
200kHz  
200kHz  
20  
0
100  
1000  
10k  
100k  
100  
1000  
10k  
100k  
100  
1000  
10k  
100k  
CAPACITIVE LOAD (pF)  
CAPACITIVE LOAD (pF)  
CAPACITIVE LOAD (pF)  
5-46  
April 1998  
MIC4421/4422  
Micrel  
Typical Characteristic Curves (Cont.)  
Supply Current  
vs. Frequency  
Supply Current  
vs. Frequency  
Supply Current  
vs. Frequency  
180  
160  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
60  
50  
40  
30  
20  
10  
0
VS = 18V  
VS = 12V  
VS = 5V  
60  
40  
20  
0
10k  
100k  
1M  
10M  
10k  
100k  
1M  
10M  
10k  
100k  
1M  
10M  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
Propagation Delay  
vs. Supply Voltage  
Propagation Delay  
vs. Input Amplitude  
Propagation Delay  
vs. Temperature  
50  
40  
30  
20  
10  
0
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
VS = 10V  
tD2  
tD2  
5
tD2  
tD1  
tD1  
tD1  
4
6
8
10 12 14 16 18  
0
2
4
6
8
10  
-40  
0
40  
80  
120  
SUPPLY VOLTAGE (V)  
INPUT (V)  
TEMPERATURE (°C)  
Quiescent Supply Current  
vs. Temperature  
High-State Output Resist.  
Low-State Output Resist.  
vs. Supply Voltage  
vs. Supply Voltage  
1000  
2.4  
2.4  
VS = 18V  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
2.2  
2.0  
1.8  
INPUT = 1  
INPUT = 0  
1.6  
1.4  
1.2  
TJ = 150°C  
TJ = 150°C  
100  
10  
TJ = 25°C  
1.0  
0.8  
0.6  
0.4  
0.2  
0
TJ = 25°C  
-40  
0
40  
80  
120  
4
6
8
10 12 14 16 18  
4
6
8
10 12 14 16 18  
TEMPERATURE (°C)  
SUPPLY VOLTAGE (V)  
SUPPLY VOLTAGE (V)  
April 1998  
5-47  
MIC4421/4422  
Micrel  
To guarantee low supply impedance over a wide frequency  
range,aparallelcapacitorcombinationisrecommendedfor  
supply bypassing. Low inductance ceramic disk capacitors  
with short lead lengths (< 0.5 inch) should be used. A 1µF  
low ESR film capacitor in parallel with two 0.1µF low ESR  
ceramic capacitors, (such as AVX RAM Guard®), provides  
adequate bypassing. Connect one ceramic capacitor di-  
rectly between pins 1 and 4. Connect the second ceramic  
capacitor directly between pins 8 and 5.  
Applications Information  
Supply Bypassing  
Charging and discharging large capacitive loads quickly  
requires large currents. For example, charging a 10,000pF  
load to 18V in 50ns requires 3.6A.  
The MIC4421/4422 has double bonding on the supply pins,  
thegroundpinsandoutputpins. Thisreducesparasiticlead  
inductance. Low inductance enables large currents to be  
switched rapidly. It also reduces internal ringing that can  
cause voltage breakdown when the driver is operated at or  
near the maximum rated voltage.  
Grounding  
The high current capability of the MIC4421/4422 demands  
careful PC board layout for best performance. Since the  
MIC4421 is an inverting driver, any ground lead impedance  
willappearasnegativefeedbackwhichcandegradeswitch-  
ing speed. Feedback is especially noticeable with slow-rise  
time inputs. The MIC4421 input structure includes about  
200mV of hysteresis to ensure clean transitions and free-  
dom from oscillation, but attention to layout is still recom-  
mended.  
Internal ringing can also cause output oscillation due to  
feedback. This feedback is added to the input signal since  
it is referenced to the same ground.  
V
S
1µF  
Figure5showsthefeedbackeffectindetail.AstheMIC4421  
input begins to go positive, the output goes negative and  
several amperes of current flow in the ground lead. As little  
as 0.05of PC trace resistance can produce hundreds of  
millivolts at the MIC4421 ground pins. If the driving logic is  
referenced to power ground, the effective logic input level is  
reduced and oscillation may result.  
V
MIC4451  
S
Ø
2
Ø
DRIVE SIGNAL  
1
DRIVE  
LOGIC  
CONDUCTION ANGLE  
CONTROL 0° TO 180°  
Ø
M
Ø
3
1
CONDUCTION ANGLE  
CONTROL 180° TO 360°  
V
S
V
1µF  
S
To insure optimum performance, separate ground traces  
should be provided for the logic and power connections.  
Connecting the logic ground directly to the MIC4421 GND  
pins will ensure full logic drive to the input and ensure fast  
output switching. Both of the MIC4421 GND pins should,  
however, still be connected to power ground.  
MIC4452  
PHASE 1 of 3 PHASE MOTOR  
DRIVER USING MIC4420/4429  
Figure 3. Direct Motor Drive  
+15  
(x2) 1N4448  
5.6 k  
OUTPUT VOLTAGE vs LOAD CURRENT  
30  
560 Ω  
29  
0.1µF  
50V  
28  
+
1µF  
12 LINE  
50V  
BYV 10 (x 2)  
27  
1
MKS 2  
8
26  
25  
6, 7  
+
2
MIC4421  
0.1µF  
WIMA  
MKS 2  
+
5
560µF 50V  
0
50 100 150 200 250 300 350  
mA  
100µF 50V  
4
UNITED CHEMCON SXE  
Figure 4. Self Contained Voltage Doubler  
5-48  
April 1998  
MIC4421/4422  
Micrel  
dissipation limit can easily be exceeded. Therefore, some  
Input Stage  
attention should be given to power dissipation when driving  
low impedance loads and/or operating at high frequency.  
The input voltage level of the MIC4421 changes the quies-  
cent supply current. The N channel MOSFET input stage  
transistor drives a 320µA current source load. With a logic “1”  
input, the maximum quiescent supply current is 400µA. Logic  
“0” input level signals reduce quiescent current to 80µA  
typical.  
The supply current vs. frequency and supply current vs  
capacitive load characteristic curves aid in determining  
power dissipation calculations. Table 1 lists the maximum  
safe operating frequency for several power supply voltages  
when driving a 10,000pF load. More accurate power dissi-  
pation figures can be obtained by summing the three  
dissipation sources.  
The MIC4421/4422 input is designed to provide 300mV of  
hysteresis. This provides clean transitions, reduces noise  
sensitivity, and minimizes output stage current spiking when  
changing states. Input voltage threshold level is approxi-  
mately 1.5V, making the device TTL compatible over the full  
temperature and operating supply voltage ranges. Input  
current is less than ±10µA.  
Given the power dissipation in the device, and the thermal  
resistance of the package, junction operating temperature  
for any ambient is easy to calculate. For example, the  
thermal resistance of the 8-pin plastic DIP package, from  
the data sheet, is 130°C/W. In a 25°C ambient, then, using  
a maximum junction temperature of 150°C, this package  
will dissipate 960mW.  
The MIC4421 can be directly driven by the TL494, SG1526/  
1527, SG1524, TSC170, MIC38C42, and similar switch  
mode power supply integrated circuits. By offloading the  
power-driving duties to the MIC4421/4422, the power supply  
controller can operate at lower dissipation. This can improve  
performance and reliability.  
Accurate power dissipation numbers can be obtained by  
summing the three sources of power dissipation in the  
device:  
TheinputcanbegreaterthantheV supply,however,current  
will flow into the input lead. The input currents can be as high  
S
• Load Power Dissipation (P )  
• Quiescent power dissipation (P )  
• Transition power dissipation (P )  
L
Q
as 30mA p-p (6.4mA ) with the input. No damage will  
RMS  
T
occur to MIC4421/4422 however, and it will not latch.  
Calculation of load power dissipation differs depending on  
whether the load is capacitive, resistive or inductive.  
Theinputappearsasa7pFcapacitanceanddoesnotchange  
eveniftheinputisdrivenfromanACsource. Whilethedevice  
will operate and no damage will occur up to 25V below the  
negative rail, input current will increase up to 1mA/V due to  
theclampingactionoftheinput, ESDdiode, and1kresistor.  
5
Resistive Load Power Dissipation  
Dissipation caused by a resistive load can be calculated as:  
2
P = I R D  
L
O
Power Dissipation  
where:  
CMOS circuits usually permit the user to ignore power  
dissipation. Logic families such as 4000 and 74C have  
outputs which can only supply a few milliamperes of current,  
and even shorting outputs to ground will not force enough  
currenttodestroythedevice.TheMIC4421/4422ontheother  
hand, can source or sink several amperes and drive large  
capacitive loads at high frequency. The package power  
I = the current drawn by the load  
R = the output resistance of the driver when the output is  
O
high, at the power supply voltage used. (See data  
sheet)  
D = fraction of time the load is conducting (duty cycle)  
+18  
WIMA  
MKS-2  
1 µF  
Table 1: MIC4421 Maximum  
Operating Frequency  
5.0V  
18 V  
1
TEK CURRENT  
PROBE 6302  
8
6, 7  
MIC4421  
V
S
Max Frequency  
220kHz  
0 V  
5
0 V  
18V  
15V  
10V  
5V  
0.1µF  
0.1µF  
4
2,500 pF  
POLYCARBONATE  
300kHz  
LOGIC  
GROUND  
6 AMPS  
PC TRACE RESISTANCE = 0.05Ω  
640kHz  
300 mV  
2MHz  
POWER  
GROUND  
Conditions: 1. θ = 150°C/W  
JA  
2. T = 25°C  
A
3. C = 10,000pF  
L
Figure 5. Switching Time Degradation Due to  
Negative Feedback  
April 1998  
5-49  
MIC4421/4422  
Micrel  
Capacitive Load Power Dissipation  
Transition Power Dissipation  
Dissipation caused by a capacitive load is simply the energy  
placed in, or removed from, the load capacitance by the  
driver. The energy stored in a capacitor is described by the  
equation:  
Transition power is dissipated in the driver each time its  
output changes state, because during the transition, for a  
very brief interval, both the N- and P-channel MOSFETs in  
the output totem-pole are ON simultaneously, and a current  
is conducted through them from V to ground. The transition  
power dissipation is approximately:  
S
2
E = 1/2 C V  
As this energy is lost in the driver each time the load is  
charged or discharged, for power dissipation calculations the  
1/2 is removed. This equation also shows that it is good  
practice not to place more voltage in the capacitor than is  
necessary, as dissipation increases as the square of the  
voltage applied to the capacitor. For a driver with a capacitive  
load:  
P = 2 f V (A•s)  
T
S
where (A•s) is a time-current factor derived from the typical  
characteristic curve “Crossover Energy vs. Supply Voltage.”  
Total power (P ) then, as previously described is just  
D
P = P + P + P  
D
L
Q
T
2
P = f C (V )  
L
S
Definitions  
where:  
C = Load Capacitance in Farads.  
L
f = Operating Frequency  
C = Load Capacitance  
V = Driver Supply Voltage  
S
D = Duty Cycle expressed as the fraction of time the  
input to the driver is high.  
f = Operating Frequency of the driver in Hertz  
Inductive Load Power Dissipation  
I = Power supply current drawn by a driver when both  
H
For inductive loads the situation is more complicated. For the  
part of the cycle in which the driver is actively forcing current  
into the inductor, the situation is the same as it is in the  
resistive case:  
inputs are high and neither output is loaded.  
I = Power supply current drawn by a driver when both  
L
inputs are low and neither output is loaded.  
2
I = Output current from a driver in Amps.  
D
P
L1  
= I R D  
O
P = Total power dissipated in a driver in Watts.  
D
However, in this instance the R required may be either the  
O
on resistance of the driver when its output is in the high state,  
or its on resistance when the driver is in the low state,  
depending on how the inductor is connected, and this is still  
only half the story. For the part of the cycle when the inductor  
is forcing current through the driver, dissipation is best  
described as  
P = Power dissipated in the driver due to the driver’s  
L
load in Watts.  
P = Power dissipated in a quiescent driver in Watts.  
Q
P = Power dissipated in a driver when the output  
T
changes states (“shoot-through current”) in Watts.  
NOTE: The “shoot-through” current from a dual  
transition (once up, once down) for both drivers is  
stated in Figure 7 in ampere-nanoseconds. This  
figure must be multiplied by the number of repeti-  
tions per second (frequency) to find Watts.  
P
L2  
= I V (1 – D)  
D
where V is the forward drop of the clamp diode in the driver  
D
(generally around 0.7V). The two parts of the load dissipation  
must be summed in to produce P  
L
P = P + P  
L2  
L
L1  
R = Output resistance of a driver in Ohms.  
O
Quiescent Power Dissipation  
V = Power supply voltage to the IC in Volts.  
S
Quiescent power dissipation (P , as described in the input  
Q
section) depends on whether the input is high or low. A low  
input will result in a maximum current drain (per driver) of  
0.2mA; a logic high will result in a current drain of 3.0mA.  
Quiescent power can therefore be found from:  
P = V [D I + (1 – D) I ]  
Q
S
H
L
where:  
I = quiescent current with input high  
H
I = quiescent current with input low  
L
D = fraction of time input is high (duty cycle)  
V = power supply voltage  
S
5-50  
April 1998  
MIC4421/4422  
Micrel  
+18 V  
WIMA  
MK22  
1 µF  
5.0V  
18 V  
1
TEK CURRENT  
PROBE 6302  
8
2
6, 7  
MIC4421  
0 V  
5
0 V  
0.1µF  
0.1µF  
4
10,000 pF  
POLYCARBONATE  
Figure 6. Peak Output Current Test Circuit  
5
April 1998  
5-51  

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