MIC4452YMTR [MICREL]

12A BUF OR INV BASED MOSFET DRIVER, PDSO8, LEAD FREE, SOIC-8;
MIC4452YMTR
型号: MIC4452YMTR
厂家: MICREL SEMICONDUCTOR    MICREL SEMICONDUCTOR
描述:

12A BUF OR INV BASED MOSFET DRIVER, PDSO8, LEAD FREE, SOIC-8

驱动器
文件: 总14页 (文件大小:495K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MIC4451/4452  
12A-Peak Low-Side MOSFET Driver  
Bipolar/CMOS/DMOS Process  
General Description  
Features  
MIC4451 and MIC4452 CMOS MOSFET drivers are  
tough, efficient, and easy to use. The MIC4451 is an  
inverting driver, while the MIC4452 is a non-inverting  
driver.  
BiCMOS/DMOS Construction  
Latch-Up Proof: Fully Isolated Process is Inherently  
Immune to Any Latch-up.  
Input Will Withstand Negative Swing of Up to 5V  
Matched Rise and Fall Times: 25ns  
..High Peak Output Current: 12A Peak  
..Wide Operating Range: 4.5V to 18V  
..High Capacitive Load Drive: 62,000Pf  
..Low Delay Time: 30ns (typ)  
..Logic High Input for Any Voltage from 2.4V to VS  
..Low Supply Current450µA With Logic 1 Input  
..Low Output Impedance: 1.0  
Both versions are capable of 12A (peak) output and can  
drive the largest MOSFETs with an improved safe  
operating margin. The MIC4451/4452 accepts any logic  
input from 2.4V to VS without external speed-up capacitors  
or resistor networks. Proprietary circuits allow the input to  
swing negative by as much as 5V without damaging the  
part. Additional circuits protect against damage from  
electrostatic discharge.  
MIC4451/4452 drivers can replace three or more discrete  
components, reducing PCB area requirements, simplifying  
product design, and reducing assembly cost.  
..Output Voltage Swing to Within 25mV of GND or VS  
Low Equivalent Input Capacitance (typ): 7pF  
Modern Bipolar/CMOS/DMOS construction guarantees  
freedom from latch-up. The rail-to-rail swing capability of  
CMOS/DMOS insures adequate gate voltage to the  
MOSFET during power up/down sequencing. Since these  
devices are fabricated on a self-aligned process, they have  
very low crossover current, run cool, use little power, and  
are easy to drive.  
Applications  
Switch Mode Power Supplies  
Motor Controls  
Pulse Transformer Driver  
Class-D Switching Amplifiers  
Line Drivers  
Driving MOSFET or IGBT Parallel Chip Modules  
Local Power ON/OFF Switch  
Pulse Generators  
____________________________________________________________________________________________________________  
Functional Diagram  
VS  
MIC4451  
INVERTING  
0.3mA  
0.1mA  
OUT  
IN  
2k  
MIC4452  
NONINVERTING  
GND  
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-01200 • fax + 1 (408) 474-1000 • http://www.micrel.com  
M9999-011811-A  
January 2011  
Micrel Inc.  
MIC4451/4452  
Ordering Information  
Part Number  
Temperature Range  
Package  
Configuration  
Standard  
Pb-Free  
MIC4451YN  
MIC4451YM  
MIC4451ZT  
MIC4452YN  
MIC4452YM  
MIC4452ZT  
40°C to +85°C  
40°C to +85°C  
0°C to +70°C  
8-pin Plastic DIP  
8-pin SOIC  
Inverting  
Inverting  
MIC4451BM  
5-pin TO-220  
8-pin Plastic DIP  
8-pin SOIC  
Inverting  
40°C to +85°C  
40°C to +85°C  
0°C to +70°C  
Non-Inverting  
Non-Inverting  
Non-Inverting  
MIC4452BM  
5-pin TO-220  
Pin Configurations  
VS  
VS  
8
1
IN 2  
7 OUT  
3
4
6
5
NC  
OUT  
GND  
GND  
5
4
3
2
1
OUT  
GND  
VS  
GND  
IN  
Pin Description  
Pin Number  
T0-220-5  
Pin Number  
DIP, SOIC  
Pin Name  
Pin Function  
1
2, 4  
3, TAB  
5
2
IN  
GND  
VS  
OUT  
NC  
Control Input  
4, 5  
1, 8  
6, 7  
3
Ground: Duplicate Pins must be externally connected together.  
Supply Input: Duplicate pins must be externally connected together.  
Output: Duplicate pins must be externally connected together.  
Not Connected.  
M9999-011811  
January 2011  
2
Micrel Inc.  
MIC4451/4452  
Absolute Maximum Ratings(1,2, 3)  
Supply Voltage ..............................................................20V  
Input Voltage.................................... VS + 0.3V to GND 5V  
Input Current (VIN > VS) .................................................5mA  
Power Dissipation, TAMBIENT 25°C  
PDIP ..................................................................960mW  
SOIC................................................................1040mW  
5-Pin TO-220 ............................................................2W  
Power Dissipation, TCASE 25°C  
Operating Ratings  
Operating Temperature (Chip) .................................. 150°C  
Operating Temperature (Ambient)  
Z Version.................................................. 0°C to +70°C  
Y Version............................................. 40°C to + 85°C  
Thermal Impedances (To Case)  
5-Pin TO-220(θJC) ...........................................10°C/W  
5-Pin TO-220 .......................................................12.5W  
Derating Factors (to Ambient)  
PDIP ..............................................................7.7mW/°C  
SOIC..............................................................8.3mW/°C  
5-Pin TO-220 ..................................................17mW/°C  
Storage Temperature................................65°C to +150°C  
Lead Temperature(10 sec) ........................................ 300°C  
Electrical Characteristics(4)  
(TA=25oC, with 4.5V VS 18V unless otherwise specified.)  
Symbol  
Input  
VIH  
Parameter  
Condition  
Min.  
Typ.  
Max.  
Units  
Logic 1 Input Voltage  
Logic 0 Input Voltage  
Input Voltage Range  
Input Current  
2.4  
1.3  
1.1  
V
V
VIL  
0.8  
VS + .3  
10  
VIN  
V
5  
IIN  
0 VIN VS  
μA  
10  
Output  
VOH  
High Output Voltage  
Low Output Voltage  
See Figure 1  
See Figure 1  
V
V
VS.025  
VOL  
.025  
1.5  
Output Resistance,  
RO  
IOUT = 10mA, VS = 18V  
0.6  
Output High  
RO  
IPK  
IDC  
Output Resistance, Output Low  
Peak Output Current  
Continuous Output Current  
Latch-up Protection  
IOUT = 10mA, VS = 18V  
VS = 18V (See Figure 6)  
0.8  
12  
1.5  
A
A
2
Duty Cycle 2%  
t 300μs  
IR  
>1500  
mA  
Withstand Reverse Current  
Switching Time(3)  
tR  
Rise Time  
Test Figure 1, CL = 15,000pF  
Test Figure 1, CL = 15,000pF  
Test Figure 1  
20  
24  
25  
40  
40  
50  
50  
60  
ns  
ns  
ns  
ns  
tF  
Fall Time  
tD1  
tD2  
Delay Time  
Delay Time  
Test Figure 1  
Power Supply  
VIN = 3V  
VIN = 0V  
0.4  
80  
1.5  
mA  
μA  
V
IS  
Power Supply Current  
Operating Input Voltage  
150  
VS  
4.5  
M9999-011811  
January 2011  
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Micrel Inc.  
MIC4451/4452  
Electrical Characteristics  
(Over operating temperature range with 4.5V VS 18V unless otherwise specified.)  
Symbol  
Input  
VIH  
Parameter  
Condition  
Min.  
Typ.  
Max.  
Units  
Logic 1 Input Voltage  
Logic 0 Input Voltage  
Input Voltage Range  
Input Current  
2.4  
V
V
VIL  
0.8  
VS + .3  
10  
VIN  
V
5  
IIN  
0 VIN VS  
μA  
10  
Output  
VOH  
High Output Voltage  
Low Output Voltage  
See Figure 1  
See Figure 1  
V
V
VS .025  
VOL  
.025  
2.2  
RO  
Output Resistance, Output High IOUT = 10mA, VS = 18V  
Output Resistance,  
IOUT = 10mA, VS = 18V  
Output Low  
RO  
2.2  
Switching Time (3)  
tR  
Rise Time  
Test Figure 1, CL = 15,000pF  
Test Figure 1, CL = 15,000pF  
Test Figure 1  
50  
60  
70  
80  
ns  
ns  
ns  
ns  
tF  
Fall Time  
tD1  
tD2  
Delay Time  
Delay Time  
Test Figure 1  
Power Supply  
VIN = 3V  
VIN = 0V  
3
mA  
V
IS  
Power Supply Current  
Operating Input Voltage  
0.4  
18  
VS  
4.5  
Notes:  
1. Functional operation above the absolute maximum stress ratings is not implied.  
2. Static-sensitive device. Store only in conductive containers. Handling personnel and equipment should be grounded to prevent damage from static  
discharge.  
3. Switching times guaranteed by design.  
4. Specification for packaged product only.  
M9999-011811  
January 2011  
4
Micrel Inc.  
MIC4451/4452  
Test Circuits  
VS = 18V  
VS = 18V  
0.1µF  
1.0µF  
0.1µF  
1.0µF  
0.1µF  
0.1µF  
IN  
OUT  
15000pF  
IN  
OUT  
15000pF  
MIC4451  
MIC4452  
M9999-011811  
January 2011  
5
Micrel Inc.  
MIC4451/4452  
Typical Characteristics  
M9999-011811  
January 2011  
6
Micrel Inc.  
MIC4451/4452  
Typical Characteristics Curves (Continued)  
M9999-011811  
January 2011  
7
Micrel Inc.  
MIC4451/4452  
To guarantee low supply impedance over a wide  
frequency range, a parallel capacitor combination is  
recommended for supply bypassing. Low inductance  
ceramic disk capacitors with short lead lengths (< 0.5  
inch) should be used. A 1µF low ESR film capacitor in  
parallel with two 0.1µF low ESR ceramic capacitors,  
(such as AVX RAM GUARD®), provides adequate  
bypassing. Connect one ceramic capacitor directly  
between pins 1 and 4. Connect the second ceramic  
capacitor directly between pins 8 and 5.  
Applications Information  
Supply Bypassing  
Charging and discharging large capacitive loads quickly  
requires large currents. For example, changing a  
10,000pF load to 18V in 50ns requires 3.6A.  
The MIC4451/4452 has double bonding on the supply  
pins, the ground pins and output pins. This reduces  
parasitic lead inductance. Low inductance enables large  
currents to be switched rapidly. It also reduces internal  
ringing that can cause voltage breakdown when the  
driver is operated at or near the maximum rated voltage.  
Grounding  
The high current capability of the MIC4451/4452  
demands careful PC board layout for best performance.  
Since the MIC4451 is an inverting driver, any ground  
lead impedance will appear as negative feedback which  
can degrade switching speed. Feedback is especially  
noticeable with slow-rise time inputs. The MIC4451 input  
structure includes 200mV of hysteresis to ensure clean  
transitions and freedom from oscillation, but attention to  
layout is still recommended.  
Internal ringing can also cause output oscillation due to  
feedback. This feedback is added to the input signal  
since it is referenced to the same ground.  
V
DD  
1µF  
MIC4451  
V
DD  
Figure 5 shows the feedback effect in detail. As the  
MIC4451 input begins to go positive, the output goes  
negative and several amperes of current flow in the  
ground lead. As little as 0.05of PC trace resistance  
can produce hundreds of millivolts at the MIC4451  
ground pins. If the driving logic is referenced to power  
ground, the effective logic input level is reduced and  
oscillation may result.  
φ
2
φ
DRIVE SIGNAL  
1
DRIVE  
LOGIC  
CONDUCTION ANGLE  
CONTROL 0° TO 180°  
CONDUCTION ANGLE  
CONTROL 180° TO 360°  
φ
M
φ
1
3
V
DD  
V
1µF  
DD  
MIC4452  
To insure optimum performance, separate ground traces  
should be provided for the logic and power connections.  
Connecting the logic ground directly to the MIC4451  
GND pins will ensure full logic drive to the input and  
ensure fast output switching. Both of the MIC4451 GND  
pins should, however, still be connected to power  
ground.  
PHASE 1 OF 3 PHASE MOTOR  
DRIVER USING MIC4451/4452  
Figure 3. Direct Motor Drive  
+15  
(x2) 1N4448  
5.6k  
560 ꢀ  
0.1µF  
50V  
+
1µF  
50V  
BYV 10 (x 2)  
1
MKS2  
8
6, 7  
+
2
MIC4451  
0.1µF  
WIMA  
MKS2  
+
5
560µF 50V  
100µF 50V  
4
UNITED CHEMCON SXE  
Figure 4. Self Contained Voltage Doubler  
M9999-011811  
January 2011  
8
Micrel Inc.  
MIC4451/4452  
+18  
Input Stage  
WIMA  
MKS-2  
1 µF  
The input voltage level of the MIC4451 changes the  
quiescent supply current. The N channel MOSFET input  
stage transistor drives a 320µA current source load. With  
a logic “1” input, the maximum quiescent supply current  
is 400µA. Logic “0” input level signals reduce quiescent  
current to 80µA typical.  
5.0V  
18 V  
1
TEK CURRENT  
PROBE 6302  
8
6, 7  
MIC4451  
0 V  
5
0 V  
The MIC4451/4452 input is designed to provide 200mV  
of hysteresis. This provides clean transitions, reduces  
noise sensitivity, and minimizes output stage current  
spiking when changing states. Input voltage threshold  
level is approximately 1.5V, making the device TTL  
compatible over the full temperature and operating  
supply voltage ranges. Input current is less than ±10µA.  
0.1µF  
0.1µF  
4
2,500 pF  
POLYCARBONATE  
LOGIC  
GROUND  
12 AMPS  
PC TRACE RESISTANCE = 0.05  
300 mV  
POWER  
GROUND  
The MIC4451 can be directly driven by the TL494,  
SG1526/1527, SG1524, TSC170, MIC38C42, and  
similar switch mode power supply integrated circuits. By  
offloading the power-driving duties to the MIC4451/4452,  
the power supply controller can operate at lower  
dissipation. This can improve performance and reliability.  
Figure 5. Switching Time Degradation Due to Negative  
Feedback  
The supply current vs. frequency and supply current vs  
capacitive load characteristic curves aid in determining  
The input can be greater than the VS supply, however,  
current will flow into the input lead. The input currents  
can be as high as 30mA p-p (6.4mARMS) with the input.  
No damage will occur to MIC4451/4452 however, and it  
will not latch.  
power dissipation calculations. Table  
1
lists the  
maximum safe operating frequency for several power  
supply voltages when driving a 10,000pF load. More  
accurate power dissipation figures can be obtained by  
summing the three dissipation sources.  
The input appears as a 7pF capacitance and does not  
change even if the input is driven from an AC source.  
While the device will operate and no damage will occur  
up to 25V below the negative rail, input current will  
increase up to 1mA/V due to the clamping action of the  
input, ESD diode, and 1kresistor.  
Given the power dissipation in the device, and the  
thermal resistance of the package, junction operating  
temperature for any ambient is easy to calculate. For  
example, the thermal resistance of the 8-pin plastic DIP  
package, from the data sheet, is 130°C/W. In a 25°C  
ambient, then, using a maximum junction temperature of  
125°C, this package will dissipate 960mW.  
Power Dissipation  
Accurate power dissipation numbers can be obtained by  
summing the three sources of power dissipation in the  
device:  
CMOS circuits usually permit the user to ignore power  
dissipation. Logic families such as 4000 and 74C have  
outputs which can only supply a few milliamperes of  
current, and even shorting outputs to ground will not  
force enough current to destroy the device. The  
MIC4451/4452 on the other hand, can source or sink  
several amperes and drive large capacitive loads at high  
frequency. The package power dissipation limit can  
easily be exceeded. Therefore, some attention should be  
given to power dissipation when driving low impedance  
loads and/or operating at high frequency.  
Load Power Dissipation (PL)  
Quiescent power dissipation (PQ)  
Transition power dissipation (PT)  
Calculation of load power dissipation differs depending  
on whether the load is capacitive, resistive or inductive.  
M9999-011811  
January 2011  
9
Micrel Inc.  
MIC4451/4452  
Resistive Load Power Dissipation  
Inductive Load Power Dissipation  
Dissipation caused by a resistive load can be calculated  
as:  
For inductive loads the situation is more complicated.  
For the part of the cycle in which the driver is actively  
forcing current into the inductor, the situation is the same  
as it is in the resistive case:  
PL = I2 RO D  
PL1 = I2 RO D  
where:  
I = the current drawn by the load  
However, in this instance the RO required may be either  
the on resistance of the driver when its output is in the  
high state, or its on resistance when the driver is in the  
low state, depending on how the inductor is connected,  
and this is still only half the story. For the part of the  
cycle when the inductor is forcing current through the  
driver, dissipation is best described as:  
RO = the output resistance of the driver when the output  
is high, at the power supply voltage used. (See data  
sheet)  
D = fraction of time the load is conducting (duty cycle)  
Capacitive Load Power Dissipation  
Dissipation caused by a capacitive load is simply the  
energy placed in, or removed from, the load capacitance  
by the driver. The energy stored in a capacitor is  
described by the equation:  
PL2 = I VD (1 – D)  
where VD is the forward drop of the clamp diode in the  
driver (generally around 0.7V). The two parts of the load  
dissipation must be summed in to produce PL:  
E = 1/2 C V2  
VS  
18V  
15V  
10V  
5V  
Max. Frequency  
220kHz  
PL = PL1 + PL2  
300kHz  
Quiescent Power Dissipation  
640kHz  
Quiescent power dissipation (PQ, as described in the  
input section) depends on whether the input is high or  
low. A low input will result in a maximum current drain  
(per driver) of 0.2mA; a logic high will result in a  
current drain of 3.0mA. Quiescent power can therefore  
be found from:  
2MHz  
Table 1: MIC4451 Maximum Operating Frequency  
As this energy is lost in the driver each time the load is  
charged or discharged, for power dissipation calculations  
the 1/2 is removed. This equation also shows that it is  
good practice not to place more voltage on the capacitor  
than is necessary, as dissipation increases as the  
square of the voltage applied to the capacitor. For a  
driver with a capacitive load:  
PQ = VS [D IH + (1 – D) IL]  
where:  
IH = quiescent current with input high  
IL = quiescent current with input low  
D = fraction of time input is high (duty cycle)  
VS = power supply voltage  
PL = f C (VS)2  
where:  
f = Operating Frequency  
C = Load Capacitance  
VS = Driver Supply Voltage  
M9999-011811  
January 2011  
10  
Micrel Inc.  
MIC4451/4452  
Transition Power Dissipation  
Transition power is dissipated in the driver each time its  
output changes state, because during the transition, for  
a very brief interval, both the N- and P-channel  
MOSFETs in the output totem-pole are ON  
simultaneously, and a current is conducted through them  
from VS to ground. The transition power dissipation is  
approximately:  
PT = 2 f VS (A × s)  
where (A × s) is a time-current factor derived from the  
typical characteristic curve “Crossover Energy vs.  
Supply Voltage.” Total power (PD) then, as previously  
described is:  
PD = PL + PQ + PT  
Definitions  
CL = Load Capacitance in Farads.  
D = Duty Cycle expressed as the fraction of time the  
input to the driver is high.  
f = Operating Frequency of the driver in Hertz  
IH = Power supply current drawn by a driver when both  
inputs are high and neither output is loaded.  
IL = Power supply current drawn by a driver when both  
inputs are low and neither output is loaded.  
ID = Output current from a driver in Amps.  
PD = Total power dissipated in a driver in Watts.  
PL = Power dissipated in the driver due to the driver’s  
load in Watts.  
PQ = Power dissipated in a quiescent driver in Watts.  
PT = Power dissipated in a driver when the output  
changes states (“shoot-through current”) in Watts.  
NOTE: The “shoot-through” current from a dual  
transition (once up, once down) for both drivers is  
stated in Figure 7 in ampere-nanoseconds. This  
figure must be multiplied by the number of  
repetitions per second (frequency) to find Watts.  
RO = Output resistance of a driver in Ohms.  
VS = Power supply voltage to the IC in Volts.  
M9999-011811  
January 2011  
11  
Micrel Inc.  
MIC4451/4452  
+18 V  
WIMA  
MK22  
1 µF  
5.0V  
18 V  
1
TEK CURRENT  
PROBE 6302  
8
2
6, 7  
MIC4452  
0 V  
5
0 V  
0.1µF  
0.1µF  
4
15,000 pF  
POLYCARBONATE  
Figure 6. Peak Output Current Test Circuit  
M9999-011811  
January 2011  
12  
Micrel Inc.  
MIC4451/4452  
Package Information  
PIN 1  
DIMENSIONS:  
INCH (MM)  
0.380 (9.65)  
0.370 (9.40)  
0.255 (6.48)  
0.245 (6.22)  
0.135 (3.43)  
0.125 (3.18)  
0.300 (7.62)  
0.013 (0.330  
0.010 (0.254  
0.380 (9.65)  
0.320 (8.13)  
0.018 (0.57)  
0.100 (2.54)  
0.130 (3.30)  
0.0375 (0.952)  
8-Pin Plastic DIP (N)  
0.026 (0.65)  
MAX)  
PIN 1  
0.157 (3.99)  
0.150 (3.81)  
DIMENSIONS:  
INCHES (MM)  
0.020 (0.51)  
0.013 (0.33)  
0.050 (1.27)  
TYP  
45°  
0.0098 (0.249)  
0.0040 (0.102)  
0.010 (0.25)  
0.007 (0.18)  
0°–8°  
0.197 (5.0)  
0.189 (4.8)  
0.050 (1.27)  
0.016 (0.40)  
SEATING  
PLANE  
0.064 (1.63)  
0.045 (1.14)  
0.244 (6.20)  
0.228 (5.79)  
8-Pin SOIC (M)  
M9999-011811  
January 2011  
13  
Micrel Inc.  
MIC4451/4452  
MICREL, INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA  
TEL +1 (408) 944-0800 FAX +1 (408) 474-1000 WEB http://www.micrel.com  
Micrel makes no representations or warranties with respect to the accuracy or completeness of the information furnished in this data sheet. This  
information is not intended as a warranty and Micrel does not assume responsibility for its use. Micrel reserves the right to change circuitry,  
specifications and descriptions at any time without notice. No license, whether express, implied, arising by estoppel or otherwise, to any intellectual  
property rights is granted by this document. Except as provided in Micrel’s terms and conditions of sale for such products, Micrel assumes no liability  
whatsoever, and Micrel disclaims any express or implied warranty relating to the sale and/or use of Micrel products including liability or warranties  
relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right.  
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product  
can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant  
into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A  
Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully  
indemnify Micrel for any damages resulting from such use or sale.  
© 1998 Micrel, Incorporated.  
M9999-011811  
January 2011  
14  

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MIC4467

Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS
MICREL

MIC4467AJ

NAND Gate Based MOSFET Driver, 1.2A, BICMOS, CDIP14, CERDIP-14
MICREL

MIC4467AJBQ

NAND Gate Based MOSFET Driver, 1.2A, BICMOS, CDIP14, CERDIP-14
MICREL