MIC5018BM4 [MICREL]
IttyBitty⑩ High-Side MOSFET Driver Preliminary Information; IttyBitty⑩高边MOSFET驱动器的初步信息
| 型号： | MIC5018BM4 |
| 厂家： | 
MICREL SEMICONDUCTOR |
| 描述： | IttyBitty⑩ High-Side MOSFET Driver Preliminary Information |
| 文件： | 总7页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC5018
IttyBitty™ High-Side MOSFET Driver
Preliminary Information
General Description
Features
The MIC5018 IttyBitty™ high-side MOSFET driver is de-
signed to switch an N-channel enhancement-type MOSFET
from a TTL compatible control signal in high- or low-side
switch applications. This driver features the tiny 4-lead
SOT-143 package.
• +2.7V to +9V operation
• 150µA typical supply current at 5V supply
• ≤ 1µA typical standby (off) current
• Charge pump for high-side low-voltage applications
• Internal zener diode gate-to-ground MOSFET protection
• Operates in low- and high-side configurations
• TTL compatible input
The MIC5018 is powered from a +2.7V to +9V supply and
features extremely low off-state supply current. An internal
charge pump drives the gate output higher than the driver
supply voltage and can sustain the gate voltage indefinitely.
An internal zener diode limits the gate-to-source voltage to a
safe level for standard N-channel MOSFETs.
• ESD protected
Applications
• Battery conservation
• Power bus switching
• Solenoid and motion control
• Lamp control
In high-side configurations, the source voltage of the MOS-
FET approaches the supply voltage when switched on. To
keep the MOSFET turned on, the MIC5018’s output drives
the MOSFET gate voltage higher than the supply voltage. In
a typical high-side configuration, the driver is powered from
theloadsupplyvoltage. Undersomeconditions,theMIC5018
and MOSFET can switch a load voltage that is slightly higher
than the driver supply voltage.
Ordering Information
Part Number
Temp. Range
Package
Marking
MIC5018BM4
–40°C to +85°C
SOT-143
H10
5
In a low-side configuration, the driver can control a MOSFET
that switches any voltage up to the rating of the MOSFET.
The gate output voltage is higher than the typical 3.3V or 5V
logic supply and can fully enhance a standard MOSFET.
The MIC5018 is available in the SOT-143 package and
is rated for –40°C to +85°C ambient temperature range.
Typical Applications
+5V
‡
VLOAD SUPPLY
‡ Load voltage limited only by
MOSFET drain-to-source rating
* Siliconix
30mΩ, 7A max., 30V VDS max.
8-lead SOIC package
MIC5018
IRFZ24*
N-Channel
MOSFET
4.7µF
2
4
3
1
VS
G
+2.7 to +9V
CTL GND
On
Off
MIC5018
4.7µF
Si9410DY*
N-channel
MOSFET
2
4
3
1
VS
G
* International Rectifier
100mΩ, 17A max.
TO-220 package
CTL GND
On
Off
Low-Voltage High-Side Power Switch
Low-Side Power Switch
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Pin Configuration
VS
2
GND
1
Part
Identification
H10
Early production identification:
MH10
3
4
G
CTL
SOT-143 (M4)
Pin Description
Pin Number
Pin Name
Pin Function
1
2
3
4
GND
VS
Ground: Power return.
Supply (Input): +2.7V to +9V supply.
Gate (Output): Gate connection to external MOSFET.
G
CTL
Control (Input): TTL compatible on/off control input. Logic high drives the
gate output above the supply voltage. Logic low forces the gate output near
ground.
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Absolute Maximum Ratings
Supply Voltage (V
) ...........................................+10V
Lead Temperature, Soldering 10sec......................... 300°C
SUPPLY
Control Voltage (V
) ................................. –0.6V to +16V
Package Thermal Resistance
CTL
SOT-143 θ .....................................................220°C/W
Gate Voltage (V ) .......................................................+16V
JA
G
SOT-143 θ .....................................................130°C/W
JC
Ambient Temperature Range (T ) ............. –40°C to +85°C
A
Electrical Characteristics
Parameter
Condition (Note 1)
Min
Typ
Max
Units
Supply Current
VSUPPLY = 3.3V
VCTL = 0V
VCTL = 3.3V
0.01
70
1
140
µA
µA
V
SUPPLY = 5V
VCTL = 0V
VCTL = 5V
0
150
1
300
µA
µA
Control Input Voltage
2.7V ≤ VSUPPLY ≤ 9V
2.7V ≤ VSUPPLY ≤ 5V
5V ≤ VSUPPLY ≤ 9V
2.7V ≤ VSUPPLY ≤ 9V
VCTL for logic 0 input
VCTL for logic 1 input
VCTL for logic 1 input
0
0.8
VSUPPLY
VSUPPLY
1
V
V
2.0
2.4
V
Control Input Current
0.01
5
µA
pF
V
Control Input Capacitance
Zener Diode Output Clamp
Gate Output Voltage
Note 2
VSUPPLY = 9V
VSUPPLY = 2.7V
VSUPPLY = 3.0V
VSUPPLY = 4.5V
VSUPPLY = 5V
13
6.3
16
19
7.1
8.2
13.4
9.5
V
7.1
V
11.4
V
5
Gate Output Current
Gate Turn-On Time
VOUT = 10V, Note 3
µA
VSUPPLY = 4.5V
CL = 1000pF, Note 4
CL = 3000pF, Note 4
0.75
2.1
1.5
4.2
ms
ms
Gate Turn-Off Time
V
SUPPLY = 4.5V
CL = 1000pF, Note 5
CL = 3000pF, Note 5
10
30
20
60
µs
µs
General Note: Devices are ESD protected, however handling precautions are recommended.
Note 1: Typical values at T = 25°C. Minimum and maximum values indicate performance at –40°C ≥ T ≥ +85°C. Parts production tested at 25°C.
A
A
Note 2: Guaranteed by design.
Note 3: Resistive load selected for V
= 10V.
OUT
Note 4: Turn-on time is the time required for gate voltage to rise to 4V greater than the supply voltage. This represents a typical MOSFET gate
threshold voltage.
Note 5: Turn-off time is the time required for the gate voltage to fall to 4V above the supply voltage. This represents a typical MOSFET gate threshold
voltage.
Test Circuit
VSUPPLY
0.1µF
MIC5018
VS
2
4
3
1
G
VOUT
CL
CTL GND
5V
0V
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Typical Characteristics Note 4
Full Turn-Off Time
vs. Load Capacitance
Full Turn-On Time
vs. Load Capacitance
Supply Current
vs. Supply Voltage
20
15
10
5
1.0
8
7
6
5
4
3
2
1
0
Note 6
Note 5
0.8
-40°C
VSUPPLY = 3V
VSUPPLY = 3V
0.6
25°C
5V
0.4
5V
0.2
125°C
9V
9V
0
0
0
1000 2000 3000 4000 5000
CAPACITANCE (pF)
0
2
4
6
8
10
0
1000 2000 3000 4000 5000
CAPACITANCE (pF)
SUPPLY VOLTAGE (V)
Gate Output Voltage
vs. Supply Voltage
Gate Output Current
vs. Output Voltage
Gate Output Current
vs. Output Voltage
20
15
10
5
160
120
80
40
0
120
100
80
60
40
20
0
125°C
25°C
-40°C
TA = -55°C
VSUPPLY = 9V
25°C
125°C
5V
3V
0
0
2
4
6
8
10
0
2
4
6
8
10 12 14 16
0
2
4
6
8
10 12 14 16
SUPPLY VOLTAGE (V)
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
Note 4:
T
= 25°C, V
= 5V unless noted.
SUPPLY
A
Note 5: Full turn-on time is the time between V
Note 6: Full turn-off time is the time between V
rising to 2.5V and the V rising to 90% of its steady on-state value.
G
CTL
CTL
falling to 0.5V and the V falling to 10% of its steady on-state value.
G
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Functional Diagram
+2.7V to +9V
VS
MIC5018
I1
20µA
D2
35V
Q1
R1 2k
CTL
On
Off
G
Q2
EN
CHARGE
PUMP
D1
16V
D3 16V
R2
15k
Q3
GND
Functional Diagram with External Components
(High-Side Driver Configuration)
5
Functional Description
Refer to the functional diagram.
(4×). Output voltage is limited to 16V by a zener diode. The
charge pump output voltage will be approximately:
The MIC5018 is a noninverting device. Applying a logic high
signal to CTL (control input) produces gate drive output. The
G (gate) output is used to turn on an external N-channel
MOSFET.
V = 4 × V
– 2.8V, but not exceeding 16V.
SUPPLY
G
Theoscillatoroperatesfromapproximately70kHztoapproxi-
mately 100kHz depending upon the supply voltage and
temperature.
Supply
VS (supply) is rated for +2.7V to +9V. An external capacitor
is recommended to decouple noise.
Gate Output
The charge pump output is connected directly to the G (gate)
output. The charge pump is active only when CTL is high.
When CTL is low, Q3 is turned on by the second inverter and
discharges the gate of the external MOSFET to force it off.
Control
CTL (control) is a TTL compatible input. CTL must be forced
high or low by an external signal. A floating input may cause
unpredictable operation.
IfCTLishigh, andthevoltageappliedtoVSdropstozero, the
gate output will be floating (unpredictable).
A high input turns on Q2, which sinks the output of current
source I1, making the input of the first inverter low. The
inverter output becomes high enabling the charge pump.
ESD Protection
D1 and D2 clamp positive and negative ESD voltages. R1
isolates the gate of Q2 from sudden changes on the CTL
input. Q1 turns on if the emitter (CTL input) is forced below
ground to provide additional input protection. Zener D3 also
clamps ESD voltages for the gate (G) output.
Charge Pump
The charge pump is enabled when CTL is logic high. The
charge pump consists of an oscillator and voltage quadrupler
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across an IRFZ24 is less than 0.1V with a 1A load and 10V
enhancement. Higher current increases the drain-to-source
voltage drop, increasing the gate-to-source voltage.
Application Information
Supply Bypass
A capacitor from VS to GND is recommended to control
switching and supply transients. Load current and supply
lead length are some of the factors that affect capacitor
size requirements.
+5V
MIC5018
4.7µF
2
4
3
1
15V
10V
IRFZ24* approx. 0V
VS
G
A 4.7µF or 10µF aluminum electrolytic or tantalum capacitor
is suitable for many applications.
CTL GND
Logic
High
To demonstrate
this circuit, try a
2Ω, 20W
The low ESR (equivalent series resistance) of tantalum
capacitors makes them especially effective, but also makes
them susceptible to uncontrolled inrush current from low
impedance voltage sources (such as NiCd batteries or auto-
matic test equipment). Avoid instantaneously applying volt-
age, capableofhighpeakcurrent, directlytoorneartantalum
capacitors without additional current limiting. Normal power
supply turn-on (slow rise time) or printed circuit trace resis-
tance is usually adequate for normal product usage.
Voltages are approximate
5V
load resistor .
* International Rectifier
standard MOSFET
Figure 2. Using a Standard MOSFET
The MIC5018 has an internal zener diode that limits the gate-
to-ground voltage to approximately 16V.
Lower supply voltages, such as 3.3V, produce lower gate
output voltages which will not fully enhance standard
MOSFETs. This significantly reduces the maximum current
thatcanbeswitched. AlwaysrefertotheMOSFETdatasheet
to predict the MOSFET’s performance in specific applica-
tions.
MOSFET Selection
The MIC5018 is designed to drive N-channel enhancement-
type MOSFETs. The gate output (G) of the MIC5018 pro-
vides a voltage, referenced to ground, that is greater than the
supply voltage. Refer to the “Typical Characteristics: Gate
Output Voltage vs. Supply Voltage” graph.
Logic-Level MOSFET
Logic-level N-channel MOSFETs are fully enhanced with a
gate-to-source voltage of approximately 5V and generally
have an absolute maximum gate-to-source voltage of ±10V.
The supply voltage and the MOSFET drain-to-source
voltage drop determine the gate-to-source voltage.
V
= V – (V
– V
)
GS
G
SUPPLY
DS
+3.3V
where:
V
= gate-to-source voltage (enhancement)
GS
MIC5018
4.7µF
V = gate voltage (from graph)
2
4
3
1
9V
5.7V
G
IRLZ44* approx. 0V
VS
G
V
V
= supply voltage
= drain-to-source voltage (approx. 0V at
SUPPLY
CTL GND
Logic
High
DS
To demonstrate
this circuit, try
5Ω, 5W or
47Ω, 1/4W
load resistors.
low current, or when fully enhanced)
Voltages are approximate
3.3V
VSUPPLY
* International Rectifier
logic-level MOSFET
MIC5018
D
Figure 3. Using a Logic-Level MOSFET
VG
2
4
3
1
G
VS
G
VDS
S
Refer to figure 3 for an example showing nominal voltages.
The maximum gate-to-source voltage rating of a logic-level
MOSFET can be exceeded if a higher supply voltage is used.
An external zener diode can clamp the gate-to-source volt-
age as shown in figure 4. The zener voltage, plus its
tolerance, must not exceed the absolute maximum gate
voltage of the MOSFET.
VGS
CTL GND
VLOAD
Figure 1. Voltages
The performance of the MOSFET is determined by the gate-
to-source voltage. Choose the type of MOSFET according to
the calculated gate-to-source voltage.
VSUPPLY
MIC5018
Logic-level
N-channel
MOSFET
2
4
3
1
Standard MOSFET
VS
G
StandardMOSFETsarefullyenhancedwithagate-to-source
voltage of about 10V. Their absolute maximum gate-to-
source voltage is ±20V.
CTL GND
5V < VZ < 10V
Protects gate of
logic-level MOSFET
With a 5V supply, the MIC5018 produces a gate output of
approximately 15V. Figure 2 shows how the remaining
voltages conform. The actual drain-to-source voltage drop
Figure 4. Gate-to-Source Protection
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A gate-to-source zener may also be required when the
maximum gate-to-source voltage could be exceeded due to
normal part-to-part variation in gate output voltage. Other
conditions can momentarily increase the gate-to-source volt-
age, such as turning on a capacitive load or shorting a load.
Split Power Supply
Refer to figure 6. The MIC5018 can be used to control a 12V
load by separating the driver supply from the load supply.
+5V
+12V
MIC5018
VS
CTL GND
4.7µF
Inductive Loads
2
4
3
1
15V
3V
IRLZ44* approx. 0V
G
Inductive loads include relays, and solenoids. Long leads
may also have enough inductance to cause adverse effects
in some circuits.
Logic
High
To demonstrate
this circuit, try a
40Ω, 5W or
100Ω, 2W
load resistor.
Voltages are approximate
12V
* International Rectifier
logic-level MOSFET
+2.7V to +9V
MIC5018
4.7µF
Figure 6. 12V High-Side Switch
2
4
3
1
VS
G
Alogic-levelMOSFETisrequired. TheMOSFET’smaximum
current is limited slightly because the gate is not fully en-
hanced. To predict the MOSFETs performance for any pair
of supply voltages, calculate the gate-to-source voltage and
refer to the MOSFET data sheet.
CTL GND
On
Off
Schottky
Diode
V
= V – (V
– V
)
GS
G
LOAD SUPPLY
DS
Figure 5. Switching an Inductive Load
V is determined from the driver supply voltage using the
G
“Typical Characteristics: Gate Output Voltage vs. Supply
Voltage” graph.
Switching off an inductive load in a high-side application
momentarily forces the MOSFET source negative (as the
inductoropposeschangestocurrent). Thisvoltagespikecan
be very large and can exceed a MOSFET’s gate-to-source
and drain-to-source ratings. A Schottky diode across the
inductive load provides a discharge current path to minimize
thevoltagespike. Thepeakcurrentratingofthediodeshould
be greater than the load current.
Low-Side Switch Configuration
The low-side configuration makes it possible to switch a
voltage much higher than the MIC5018’s maximum supply
voltage.
5
+80V
* International Rectifier
standard MOSFET
To demonstrate
BVDSS = 100V
In a low-side application, switching off an inductive load will
momentarily force the MOSFET drain higher than the supply
voltage. The same precaution applies.
this circuit, try
1k, 10W or
33k, 1/4W
+2.7 to +9V
load resistors.
MIC5018
4.7µF
IRF540*
N-channel
MOSFET
2
4
3
1
VS
G
CTL GND
On
Off
Figure 7. Low-Side Switch Configuration
The maximum switched voltage is limited only by the
MOSFET’s maximum drain-to-source ratings.
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