MIC94031BM4 [MICREL]
TinyFET⑩ P-Channel MOSFET Preliminary Information; TinyFET⑩ P沟道MOSFET的初步信息
| 型号： | MIC94031BM4 |
| 厂家： | 
MICREL SEMICONDUCTOR |
| 描述： | TinyFET⑩ P-Channel MOSFET Preliminary Information |
| 文件： | 总4页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC94030/94031
TinyFET™ P-Channel MOSFET
Preliminary Information
General Description
Features
The MIC94030 and MIC94031 are 4-terminal silicon gate
P-channelMOSFETsthatprovidelowon-resistanceinavery
small package.
• 13.5V minimum drain-to-source breakdown
• 0.75Ω typical on-resistance
at 4.5V gate-to-source voltage
• 0.45Ω typical on-resistance
Designed for high-side switch applications where space is
critical, the MIC94030/1 exhibits an on-resistance of typically
0.75Ω at 4.5V gate-to-source voltage. The MIC94030/1 also
operates with only 2.7V gate-to-source voltage.
at 10V gate-to-source voltage
• Operates with 2.7V gate-to-source voltage
• Separate substrate connection for added control
• Industry’s smallest surface mount package
The MIC94030 is the basic 4-lead P-channel MOSFET. The
MIC94031 is a variation that includes an internal gate pull-up
resistor that can reduce the system parts count in many
applications.
Applications
• Distributed power management
• PCMCIA card power management
• Battery-powered computers, peripherals
• Hand-held bar-code scanners
The 4-terminal SOT-143 package permits a substrate con-
nectionseparatefromthesourceconnection. This4-terminal
configuration improves the θ (improved heat dissipation)
• Portable communications equipment
JA
and makes analog switch applications practical.
Ordering Information
The small size, low threshold, and low R
make the
DS(on)
Part Number
MIC94030BM4
MIC94031BM4
Temperature Range*
–55°C to +150°C
–55°C to +150°C
Package
SOT-143
SOT-143
MIC94030/1theidealchoiceforPCMCIAcardsleepmodeor
distributed power management applications.
* Operating Junction Temperature
Pin Configuration
Typical PCB Layout
6
PCB heat sink
D
plane improves
heat dissipation
Drain
Substrate
SS
Part Number
MIC94030BM4
MIC94031BM4
Identification
P30
Part
Identification
P3x
P31
Gate
Source
SOT-143 Package (M4)
G
S
PCB traces
Schematic Symbol
Functional Diagrams
S
S
~500kΩ
Source
Substrate
Drain
Gate
G
SS
G
SS
Internal
gate-to-source
pull-up resistor
D
D
Schematic Symbol
MIC94030
MIC94031
Patents 5,355,008; 5,589,702
1997
6-41
MIC94030/94031
Micrel
Absolute Maximum Ratings
Voltageandcurrentvaluesarenegative. Signsnotshownforclarity.
Drain-to-Source Voltage (pulse)....................................16V
Gate-to-Source Voltage (pulse) ....................................16V
Continuous Drain Current
Total Power Dissipation
T = 25°C ............................................................568mW
A
T = 100°C ..........................................................227mW
A
Thermal Resistance
θ
θ
...................................................................................... 220°C/W
..................................................................................... 130°C/W
JA
JC
T = 25°C ....................................................................1A
A
T = 100°C ...............................................................0.5A
A
Lead Temperature
Operating Junction Temperature ............... –55°C to +150°
Storage Temperature ............................... –55°C to +150°C
1/16" from case, 10s ........................................... +300°C
Electrical Characteristics Voltage and current values are negative. Signs not shown for clarity.
Symbol
VBDSS
VGS
Parameter
Condition (Note 1)
Min
13.5
0.6
Typ
Max
Units
V
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA
Gate Threshold Voltage
Gate-Body Leakage
VDS = VGS, ID = 250µA
1.0
1.4
1
V
IGSS
VDS = 0V, VGS = 12V, Note 2, Note 3
VDS = 0V, VGS = 12V, Note 2, Note 4
VGS = 0V, VDS = 12V
µA
kΩ
pF
µA
µA
A
RGS
Gate-Source Resistor
Input Capacitance
500
750
100
1000
CISS
IDSS
Zero Gate Voltage Drain Current
VDS = 12V, VGS = 0V
25
VDS = 12V, VGS = 0V, TJ = 125°C
VDS = 10V, VGS = 10V, Note 5
0.010
6.3
250
ID(ON)
On-State Drain Current
RDS(ON)
Drain-Source On-State Resist.
VGS = 10V, ID = 100mA
VGS = 4.5V, ID = 100mA
VGS = 2.7V, ID = 100mA
0.45
0.75
1.20
Ω
Ω
Ω
1.00
gFS
Forward Transconductance
VDS = 10V, ID = 200mA, Note 5
480
mS
Note 1 TA = 25°C unless noted. Substrate connected to source for all conditions
Note 2 ESD gate protection diode conducts during positive gate-to-source voltage excursions.
Note 3 MIC94030 only
Note 4 MIC94031 only
Note 5 Pulse Test: Pulse Width ≤ 80µsec, Duty Cycle ≤ 0.5%
6-42
1997
MIC94030/94031
Micrel
Typical Characteristics
On Resistance vs.
Drain Current at 25°C
On Resistance vs.
Drain Current at 125°C
1.50
1.25
1.00
0.75
0.50
0.25
1.50
1.25
1.00
0.75
0.50
0.25
0.00
80µs Pulse Test
80µs Pulse Test
VG = 4.5V
VG = 4.5V
VG = 10V
VG = 10V
0.00
0.0
0.5
1.0
(A)
1.5
2.0
0.0
0.5
1.0
(A)
1.5
2.0
I
I
D
D
Drain Characteristics
Drain Characteristics
Drain Characteristics
160
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
10V
9V
2.0V
5.0V
VGS
4.5V
VGS
140
VGS
1.8V
8V
120
4.0V
6V
100
3.5V
2.5V
2.0V
5V
80
60
40
20
0
1.6V
4V
3V
1.5V
1.4V
1.2V
2V
1V
1.0V
0.0
0.5
1.0
1.5
2.0
0
2
4
6
8
10 12 14
0
2
4
6
8
10 12 14
DRAIN-TO-SOURCE VOLTAGE (V)
DRAIN-TO-SOURCE VOLTAGE (V)
DRAIN-TO-SOURCE VOLTAGE (V)
300µs Pulse Test
80µs Pulse Test
6
1997
6-43
MIC94030/94031
Micrel
Typical Applications
SS*
S
D
+5V
MIC94030
G
On
Off
74HC04
* Substrate must be
connected to source
Figure 1. Power Switch Application
+12V
Internal
S
D
Resistor
G
Open Drain
Output
SS*
MIC94031
* Substrate must be
connected to source
Figure 2. Power Control Application
SS*
S
D
+12V
A
B
Output
0V
MIC94030
G
Off Off
On Off +12V
Off On +8V
On On don’t!
On
Off
A
74C04†
SS*
2MΩ
S
D
* Substrate must be
+8V
connected to source
+12V
MIC94030
G
†
Use “C” version only. “HC”
versions not rated to 12V.
On
Off
B
74C04†
Figure 3. Analog Switch Application
6-44
1997
相关型号：
MIC94031BM4T&R
Small Signal Field-Effect Transistor, 1A I(D), 13.5V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-143, 4 PIN
MICREL
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