MM5451YN [MICREL]
LED Display Driver; LED显示驱动器
| 型号： | MM5451YN |
| 厂家： | 
MICREL SEMICONDUCTOR |
| 描述： | LED Display Driver |
| 文件： | 总6页 (文件大小：742K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
SemiWell Semiconductor
2N7000
Logic N-Channel MOSFET
Features
3. Drain
Symbol
{
■ RDS(on) (Max 5 Ω )@VGS=10V
RDS(on) (Max 5.3Ω )@VGS=4.5V
●
◀
▲
■ Gate Charge (Typical 0.5nC)
■ Maximum Junction Temperature Range (150°C)
●
●
2. Gate
{
{
1. Source
TO-92
General Description
This Power MOSFET is produced using planar DMOS technology.
And this Power MOSFET is well suited for Battery switch, Load
switch, Motor controller and other small signal switches.
1
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
60
Units
V
Drain to Source Voltage
Continuous Drain Current(@TA = 25°C)
Drain Current Pulsed
200
mA
mA
V
IDM
(Note 1)
500
VGS
Gate to Source Voltage
±20
0.4
Total Power Dissipation Single Operation (TA=25°C)
Total Power Dissipation Single Operation (TA=70°C)
Operating Junction Temperature & Storage Temperature
W
mW
°C
PD
3.2
T
STG, TJ
- 55 ~ 150
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 10 seconds.
TL
300
°C
Thermal Characteristics
Value
Typ.
Symbol
Parameter
Units
Min.
Max.
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
312.5
°C/W
January, 2003. Rev. 0.
1/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
Electrical Characteristics ( TJ = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0V, ID = 250uA
D = 250uA, referenced to 25 °C
Drain-Source Breakdown Voltage
60
-
-
-
-
V
Δ BVDSS
Δ TJ
/
Breakdown Voltage Temperature
coefficient
I
48
mV/°C
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125 °C
1
IDSS
Drain-Source Leakage Current
-
-
uA
1000
VGS = 20V, VDS = 0V
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
100
nA
nA
IGSS
V
GS = -20V, VDS = 0V
-
-
-
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250uA
GS = 10 V, ID = 500mA
VGS = 4.5 V, ID = 75mA
Gate Threshold Voltage
1.0
2.5
V
V
Static Drain-Source On-state
Resistance
-
-
1.55
1.9
5
5.3
RDS(ON)
Ω
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
20
11
3
25
14
4
pF
Coss
Crss
Output Capacitance
V
GS =0 V, VDS =25V, f = 1MHz
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
-
-
-
-
-
-
4
2.5
17
18
15
44
24
0.65
-
VDD =30V, ID =200mA, RG =50Ω
VGS = 10 V
Rise Time
ns
Turn-off Delay Time
Fall Time
(Note 2,3)
7
Qg
Total Gate Charge
Gate-Source Charge
0.5
0.15
V
DS =30V, VGS =4.5V, ID =200mA
(Note 2,3)
Qgs
nC
Qgd
Gate-Drain Charge(Miller Charge)
-
0.2
-
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Parameter
Maximum Continuous Diode Forward Current
Test Conditions
Min.
-
Typ.
-
Max.
200
Unit.
mA
V
VSD
Diode Forward Voltage
IS =200mA, VGS =0V
(Note 2)
-
-
1.2
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
2/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
Fig 2. Transfer Characteristics
Fig 1. On-State Characteristics
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Top :
100
10-1
100
10-1
100 Bottom : 3.0 V
150oC
-55oC
4
※ Notes :
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
25oC
1. VDS = 10V
2. 250µ s Pulse Test
100
101
0
2
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
3.0
2.5
2.0
1.5
1.0
VGS = 4.5V
VGS = 10V
150℃
25℃
※ Notes :
1. VGS = 0V
※ Note : T = 25℃
2. 250µ s Pulse Test
J
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
50
40
30
20
10
0
12
10
8
C
iss=Cgs+Cgd(Cds=shorted)
oss=Cds+Cgd
Crss=Cgd
C
VDS = 30V
VDS = 48V
※ Notes :
1. VGS = 0V
2. f=1MHz
6
C
iss
Coss
4
2
C
rss
※ Note : ID = 200 mA
1.0
0
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
0.8
1.2
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
Fig 8. On-Resistance Variation
vs. Junction Temperature
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
※ Notes :
1. VGS = 0 V
※ Notes :
1. VGS = 10 V
2. ID = 500 mA
2. ID = 250 µ A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
4/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
Fig. 9. Gate Charge Test Circuit & Waveforms
VGS
Same Type
50K
Ω
as DUT
Qg
12V
200nF
V
4.5
300nF
VDS
VGS
Qgs
Qgd
DUT
1mA
Charge
Fig 10. Switching Time Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
( 0.5 rated VDS
)
10%
10V
Vin
DUT
RG
Pulse
td(on)
tr
td(off)
tf
Generator
t on
t off
5/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
2N7000
TO-92 Package Dimension
mm
Typ.
4.2
Inch
Typ.
Dim.
Min.
Max.
Min.
Max.
A
B
C
D
E
F
G
H
I
0.165
3.7
4.83
14.87
0.4
0.146
0.190
0.585
0.016
0.190
0.017
4.43
0.174
0.554
14.07
4.43
0.33
4.83
0.45
0.174
2.54
2.54
0.100
0.100
J
0.48
0.013
0.019
A
F
E
B
C
G
1
2
3
D
1. Source
2. Gate
3. Drain
J
H
I
6/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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