BC317 [MICRO-ELECTRONICS]
NPN SILICON PLANAR EPITAXIAL TRANSISTORS; NPN硅平面外延晶体管
| 型号： | BC317 |
| 厂家： | 
Micro Electronics |
| 描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 文件： | 总6页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC107
BC108
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC107 and BC108 are silicon planar
epitaxial NPN transistors in TO-18 metal case.
They are suitable for use in driver stages, low
noise input stages and signal processing circuits
of television reveivers. The PNP complemet for
BC107 is BC177.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BC107
BC108
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
50
45
6
30
20
5
V
V
V
100
mA
Ptot
Total Dissipation at Tamb ≤ 25 oC
0.3
0.75
W
W
at Tcase ≤ 25 oC
Tstg
Tj
Storage Temperature
-55 to 175
175
oC
oC
Max. Operating Junction Temperature
1/6
November 1997
BC107/BC108
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
200
500
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
for BC107
VCB = 40 V
VCB = 40 V
for BC108
VCB = 20 V
VCB = 20 V
15
15
nA
µA
Tcase = 150 oC
Tcase = 150 oC
15
15
µA
µA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10 µA
for BC107
for BC108
50
30
V
V
V(BR)CEO Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
for BC107
for BC108
45
20
V
V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10 µA
for BC107
for BC108
6
5
V
V
VCE(sat)
VBE(sat)
VBE(on)
hFE
Collector-Emitter
Saturation Voltage
IC = 10 mA
IB = 0.5 mA
70
200
250
600
mV
mV
IC = 100 mA IB = 5 mA
IC = 10 mA IB = 0.5 mA
IC = 100 mA IB = 5 mA
Base-Emitter
Saturation Voltage
750
950
mV
mV
Base-Emitter On
Voltage
IC = 2 mA
IC = 10 mA
VCE = 5 V
VCE = 5 V
550
650
700
700
770
mV
mV
DC Current Gain
IC = 2 mA
VCE = 5 V
for BC107
110
110
200
110
110
200
420
450
220
450
800
220
450
800
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
IC = 10 µA
VCE = 5 V
for BC107
120
90
150
120
90
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
40
40
100
150
270
hfe
Small Signal Current
Gain
IC = 2 mA
for BC107
VCE = 5 V
f = 1KHz
250
190
300
370
190
300
500
2
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
IC = 10 mA VCE = 10 V f = 100 MHz
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2/6
BC107/BC108
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
CCBO
Collector Base
Capacitance
IE = 0
IC = 0
VCB = 10 V
f = 1MHz
4
6
pF
CEBO
NF
Emitter Base
Capacitance
VEB = 0.5 V
f = 1MHz
12
2
pF
dB
Noise Figure
IC = 0.2 mA VCE = 5 V
10
f = 1KHz
Rg = 2KΩ
B = 200Hz
hie
Input Impedance
IC = 2 mA
VCE = 5 V f = 1KHz
for BC107
4
3
4.8
5.5
3
KΩ
KΩ
KΩ
KΩ
KΩ
KΩ
KΩ
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
4.8
7
hre
Reverse Voltage Ratio IC = 2 mA
VCE = 5 V f = 1KHz
for BC107
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
2.2
1.7
2.7
3.1
1.7
2.7
3.8
10-4
10-4
10-4
10-4
10-4
10-4
10-4
hoe
Output Admittance
IC = 2 mA
VCE = 5 V f = 1KHz
for BC107
30
13
26
30
13
26
34
µS
µS
µS
µS
µS
µS
µS
for BC107 Gr. A
for BC107 Gr. B
for BC108
for BC108 Gr. A
for BC108 Gr. B
for BC108 Gr. C
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
DC Normalized Current Gain.
Collector--emitter Saturation Voltage.
3/6
BC107/BC108
Collector-base Capacitance.
Transition Frequency.
Power Rating Chart.
4/6
BC107/BC108
TO-18 MECHANICAL DATA
mm
inch
TYP.
0.500
DIM.
MIN.
TYP.
MAX.
MIN.
MAX.
A
B
D
E
F
G
H
I
12.7
0.49
5.3
4.9
5.8
0.019
0.208
0.193
0.228
2.54
0.100
1.2
0.047
0.045
1.16
L
45o
45o
D
A
G
I
H
L
C
0016043
5/6
BC107/BC108
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare notauthorized for use as criticalcomponents in life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printedin Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
6/6
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