ML7809FA [MICRO-ELECTRONICS]

3-TERMINAL POSITIVE VOLTAGE REGULATOR; 3端正电压稳压器


型号：	ML7809FA
厂家：	Micro Electronics
描述：	3-TERMINAL POSITIVE VOLTAGE REGULATOR 3端正电压稳压器线性稳压器IC 调节器电源电路输出元件局域网
文件：	总11页 (文件大小：432K)
中文：	中文翻译
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ML7800

SERIES

3-TERMINAL POSITIVE

VOLTAGE REGULATOR

The ML7800 series are 3-Terminal Positive Voltage Regulators. These regulators employ internal current-limiting, thermal-

shutdown and safe-area compensation, making them essentially indestructible. If adequate heat sinking is provided, they can

deliver over 1A output current (Please refer to the "thermal design" portion of application note). They are intended as fixed

voltage regulations in a wide range of applications including local (on-card) regulation for elimination of distributution

problems associated with single point regulation. In addition to use as fixed voltage regulators, these devices can be used with

external components to obtain adjustable output voltages and currents.

1. OUT

2. GND

3. IN

■ Package Outline

TO-220

TO-220F

(Ta=25℃)

ABSOLUTE MAXIMUM RATINGS

Maximum Rating

PARAMETER

SYMBOL

UNIT

ML7805 to ML7809

Input Voltage

V^IN

ML7812 to ML7820

ML7824

-40 to +125

Storage Temperature Range

Tstg

P^D

℃

Operating Junction Temperature

-30 to +150

-30 to +75

Operating Temperature

Range

Operating Ambient Temperature

Topr

15(Tc≦70℃ )

Power Dissipation

THERMAL RESISTANCE

Junction-to-Ambient Temperature

Junction-to-Case

Θ ja

Θ jc

Thermal Resistance

℃/W

Measurement is to be conducted

in pulse testing.

(Tj=25℃,C1=0.33μF,Co=0.1μF)

ELECTRICAL CHARACTERISTICS

TEST CONDITIONS

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT

ML7805A / ML7805FA

Output Voltage

I^Q

V^IN=10V

VIN=10V

V^IN=10V

Io=0.5A

4.8

5.0

4.2

5.2

8.0

100

Quiescent Current

Load Regulation

Line Regulation

Ripple Rejection

Output Noise Voltage

Io=0mA

Io=0.005A to 1.5A

ΔVo Io

ΔVo Vin

V^IN=7 to 25V Io=0.5A

V^IN=10V

VIN=10V

Io=0.5A

f=120Hz

Io=0.5A

ein=2Vp-p

BW=10Hz to 100KHz

V^NO

μV

Average Temperature

Cofficient of Output Voltage

V^IN=10V

Io=0.5A

-1.1

ΔVo / ΔT

mV/℃

REV B

Page 1 of 11

Measurement is to be conducted

in pulse testing.

(Tj=25℃,C1=0.33μF,Co=0.1μF)

ELECTRICAL CHARACTERISTICS

TEST CONDITIONS

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT

ML7806A / ML7806FA

Output Voltage

I^Q

V^IN=11V

VIN=11V

V^IN=11V

V^IN=8 to 25V

V^IN=11V

VIN=11V

Io=0.5A

5.75

6.0

4.3

6.25

8.0

120

Quiescent Current

Load Regulation

Line Regulation

Ripple Rejection

Output Noise Voltage

Io=0mA

Io=0.005A to 1.5A

Io=0.5A

ΔVo Io

ΔVo Vin

Io=0.5A

f=120Hz

Io=0.5A

ein=2Vp-p

BW=10Hz to 100KHz

V^NO

μV

Average Temperature

Cofficient of Output Voltage

V^IN=11V

Io=5mA

-0.8

ΔVo / ΔT

mV/℃

ML7808A / ML7808FA

Output Voltage

I^Q

V^IN=14V

Io=0.5A

7.7

8.0

4.3

8.3

8.0

160

Quiescent Current

Load Regulation

Line Regulation

Ripple Rejection

Output Noise Voltage

VIN=14V

Io=0mA

Io=0.005A to 1.5A

Io=0.5A

V^IN=14V

ΔVo Io

ΔVo Vin

V^IN=10.5 to 25V

V^IN=14V

Io=0.5A

f=120Hz

Io=0.5A

ein=2Vp-p

BW=10Hz to 100KHz

V^NO

VIN=14V

μV

Average Temperature

Cofficient of Output Voltage

V^IN=14V

Io=5mA

-0.8

ΔVo / ΔT

mV/℃

ML7809A / ML7809FA

Output Voltage

I^Q

V^IN=15V

Io=0.5A

8.65

9.0

4.3

9.35

8.0

180

Quiescent Current

Load Regulation

Line Regulation

Ripple Rejection

Output Noise Voltage

VIN=15V

Io=0mA

Io=0.005A to 1.5A

Io=0.5A

V^IN=15V

ΔVo Io

ΔVo Vin

V^IN=11.5 to 25V

VIN=15V

Io=0.5A

f=120Hz

Io=0.5A

ein=2Vp-p

BW=10Hz to 100KHz

V^NO

VIN=15V

μV

Average Temperature

Cofficient of Output Voltage

V^IN=15V

Io=5mA

-1

ΔVo / ΔT

mV/℃

ML7812A / ML7812FA

Output Voltage

I^Q

V^IN=19V

Io=0.5A

11.5

12.0

4.3

12.5

8.0

240

Quiescent Current

Load Regulation

Line Regulation

Ripple Rejection

Output Noise Voltage

VIN=19V

Io=0mA

Io=0.005A to 1.5A

Io=0.5A

V^IN=19V

ΔVo Io

ΔVo Vin

V^IN=14.5 to 30V

V^IN=19V

Io=0.5A

f=120Hz

Io=0.5A

ein=2Vp-p

BW=10Hz to 100KHz

V^NO

VIN=19V

μV

Average Temperature

Cofficient of Output Voltage

V^IN=19V

Io=5mA

-1

ΔVo / ΔT

mV/℃

REV B

Page 2 of 11

Measurement is to be conducted

in pulse testing.

(Tj=25℃,C1=0.33μF,Co=0.1μF)

ELECTRICAL CHARACTERISTICS

TEST CONDITIONS

PARAMETER

SYMBOL

MIN. TYP. MAX. UNIT

ML7815A / ML7815FA

Output Voltage

I^Q

V^IN=23V

Io=0.5A

14.4

15.0

4.3

15.6

8.0

300

Quiescent Current

Load Regulation

Line Regulation

Ripple Rejection

Output Noise Voltage

VIN=23V

Io=0mA

Io=0.005A to 1.5A

Io=0.5A

V^IN=23V

ΔVo Io

ΔVo Vin

V^IN=17.5 to 30V

V^IN=23V

VIN=23V

Io=0.5A

BW=10Hz to 100KHz

f=120Hz

Io=0.5A

ein=2Vp-p

V^NO

μV

Average Temperature

Cofficient of Output Voltage

V^IN=23V

Io=5mA

-1

ΔVo / ΔT

mV/℃

ML7818A / ML7818FA

Output Voltage

I^Q

V^IN=27V

Io=0.5A

17.3

18.0

4.5

18.7

8.0

360

Quiescent Current

Load Regulation

Line Regulation

Ripple Rejection

Output Noise Voltage

VIN=27V

Io=0mA

Io=0.005A to 1.5A

V^IN=27V

ΔVo Io

ΔVo Vin

V^IN=21 to 33V

V^IN=27V

Io=0.5A

f=120Hz

Io=0.5A

ein=2Vp-p

BW=10Hz to 100KHz

Io=5mA

V^NO

VIN=27V

110

μV

Average Temperature

Cofficient of Output Voltage

V^IN=27V

-1

ΔVo / ΔT

mV/℃

ML7820A / ML7820FA

Output Voltage

I^Q

V^IN=29V

Io=0.5A

19.2

20.0

4.5

20.8

8.0

400

Quiescent Current

Load Regulation

Line Regulation

Ripple Rejection

Output Noise Voltage

VIN=29V

Io=0mA

Io=0.005A to 1.5A

Io=0.5A

V^IN=29V

ΔVo Io

ΔVo Vin

V^IN=23 to 35V

V^IN=29V

Io=0.5A

f=120Hz

Io=0.5A

ein=2Vp-p

BW=10Hz to 100KHz

V^NO

VIN=29V

150

μV

Average Temperature

Cofficient of Output Voltage

V^IN=29V

Io=5mA

-2.0

ΔVo / ΔT

mV/℃

ML7824A / ML7824FA

Output Voltage

I^Q

V^IN=33V

Io=0.5A

23.0

24.0

4.6

25.0

8.0

480

Quiescent Current

Load Regulation

Line Regulation

Ripple Rejection

Output Noise Voltage

VIN=33V

Io=0mA

Io=0.005A to 1.5A

Io=0.5A

V^IN=33V

ΔVo Io

ΔVo Vin

V^IN=28 to 38V

V^IN=33V

Io=0.5A

f=120Hz

Io=0.5A

ein=2Vp-p

BW=10Hz to 100KHz

V^NO

VIN=33V

170

μV

Average Temperature

Cofficient of Output Voltage

V^IN=33V

Io=5mA

-2.4

ΔVo / ΔT

mV/℃

REV B

Page 3 of 11

■ Power Dissipation vs. Ambient Temperature

■ Equivalent Circuit

■ Test Circuit

1. Output Voltage, Line Regulation, Load

2. Ripple Rejection

Regulation, Quiescent Current,

Average Temperature Coefficient of

Output Voltage, Output Noise Voltage.

ein = 2 Vp-p

f = 120Hz

ML7805

IIN

OUT

GND

0.33uF

0.1uF

Vo, V^N

VIN

0.33uF

0.1uF

V^IN

Vo, eo

REV B

Page 4 of 11

■ Typical Characteristics

ML7805 / 15 / 24

REV B

Page 5 of 11

■ Typical Characteristics

/24 Quiescent

REV B

Page 6 of 11

■ Typical Characteristics

REV B

Page 7 of 11

1. Application Circuit

In the following explain only the positive regulator unless otherwise specified. However they can apply to the

negative voltage regulator by easy change.

Positive/Negative Voltage Supply

Note : In the above positive and negative

power supply application, D1 and D2

should be connected. If D1 and D2

are not connected, either of positive

or negative power supply circuit may

not turns on.

78 series

OUT

+Vo

+Vin

COM

-Vin

GND

0.33uF

0.1uF

COM

OUT

-Vo

79 series

2. Note in Application Circuit

( 1 )

If the higher voltage (above the rated value) or lower voltage (GND-0.5V) is supplied to the input

terminals, the IC may be destroyed. To avoid such a case, a zener diode or other parts of the surge

supressor should be connected as shown below.

Vin

OUT

Zener Diode

Capacitor

Diode

Capacitor

( 2 )

If the higher voltage than the input terminal is supplied to the output terminal, the IC may be

destroyed. To avoid input terminal short to the GND or the stored voltage in the capacitor back to the

output terminal, by the large value capacitor connecting to the output terminal application, the SBD

should be required as shown below;

DIODE

Vin

OUT

Capacitor

* In case of negative voltage regulator, reverse the SBD and capacitor direction.

REV B

Page 8 of 11

3. Thermal Design

( 1 )

Heat Producting

There are two kinds of heat producting (P^LOSS-1, PLOSS-2) in three terminal regulator and the sum of

them is total heat producting of IC (P^LOSS).

(1-1)

P^LOSS-1: heat producting by own operation

Input voltage (Vin) and quiescent current (I^Q) produce the heat mentioned below equation.

P^LOSS-1= Vin X IQ

Iout

OUT

Input

Output

GND

I^Q

Vin

Vout

(1-2)

PLOSS-2 : heat producing by output current and the input-output differential voltage.

Internal power transistor produces the hest mentioned following equation.

P^LOSS-2

= (Vin-Vout) x Iout

(W)

Therefore, the total heat producing PLOSS is :

P^LOSS

= PLOSS-1 + PLOSS-2

= Vin X IQ + (Vin-Vout) X Iout

(W)

( 2 )

Thermal Resistance

(2-1)

Definition of Thermal Resistance : θ

Thermal resistance (θ ) is a degree of heat radiation mentioned following equation.

= (T1 - T2)/P (℃ /W) Heat Producing Quantity

Ambient Temperature or case temperature

: P (W)

:T2 (℃ )

:T1 (℃ )

Heat Source Temperature

P(W)

T1 > T2

(2-2)

Thermal resistance of TO-220

There are two kinds of thermal resistance of TO-220. One is "θjc" for the application with the heat

sink, the other is "θja" for the application without the heat sink.

thermal resistance between IC chip (junction point) and the package back side

contacting with the heat sink.

θjc :

thermal resistance between IC chip (junction point) and ambience.

θja :

REV B

Page 9 of 11

( 3 )

Heat Radiation Balance

The heat produced in the IC is radiated to ambience through the package and the heat

sink.

The quantity of the heat radiation depends on the heat source temperature, ambient

temperature and the thermal resistance of the package.

(3-1)

TO-220 with heat sink

Heat radiation balance model of the TO-220 with heat sink is shown as below.

θJC

θCH

θHS

PLOSS

θJS

Heat Source

(junction)

Ambient

Temperature

Where

thermal resistance between IC chip (junction point) and the

package backside connecting to the heatsink.

θjc :

thermal resistance between IC chip (junction point) and the

package surface.

θjs :

θ^CH:

thermal resistance between package backside and the heat sink

including the condidtion of insulator, silicon grease and

tighten torque.

thermal resistance of the heat sink

θ^HS:

Package

Face Side

Resin

θJS

Chip

θJC

Package

Back Side

θCH

θHS

Heat Sink

If the js is large enough compare with other thermal resistance, the js can be neglected and the

heat radiation model can be mentioned as below.

θJC

θCH

θHS

PLOSS

The relation between temperature and heat radiation quantity is shown below.

Tj=P^LOSSX (θjc+θCH +θHS) + Ta (℃ )

REV B

Page 10 of 11

( 4 )

Thermal Design

The heat radiation balance model of the TO-220 with the heat sink is shown as follows.

Heat radiation balance

Tj = P^LOSSX (θjc +θCH + θHS) + Ta

(℃ )

(4-1)

(4-2)

P^LOSS= Vin X IQ + (Vin-Vout) X Iout

(W)

Substituting "Eq.(4-2) into "Eq.(4-1)" obtains

Tj = [Vin X I^Q+(Vin-Vout) X Iout] X (θjc +θCH +θHS)+Ta

In Eq.(4-3)

(℃)

(4-3)

Vin, Iout, θ^CH, θHS, Ta depand on using condition.

Tj, I^Q,Vout,θjc depend on IC depend on IC specification.

Whenθ^CH, IQ and Tj are assumed the following values,

Eq.(4-3) becomes Eq.(4-4).

Insert the mica paper (0.1t) and thermal conduction silicon grease between

the IC and heat sink and tighten them with the bolt by 4Kg*cm-min.

θ^CH=0.3 to 0.4 (℃/W)

I^Q= 5 to 6mA (max.)

Tj = 125℃ (max.)

Tj(max) = 125 = [5 X Vin + (Vin-Vout) X Iout] X (5+0.3+θ^HS) +Ta

When fix the Vout, Tj depends on the Vin, Iout, θ^HSand Ta.

(℃)

(4-4)

It means;

Lower Vin and / or Iout are required to linit the temperature rise.

Smaller θ^HSis required for the effective heat reduce (i.e. using the large heat sink).

In the thermal design, when fix the Vin, Iout and Ta, selectthe heat sink which θ^HSis smaller that

the result of Eq.(4-4).

For more detail, please refer the heat resistance value mentioned in the specification of the heat sink

supplier.

REV B

Page 11 of 11

ML7809FA [MICRO-ELECTRONICS]

相关型号：

ML7809FA-FBE

ML7812

ML7812A

ML7812A-FBE

ML7812FA

ML7812FA-FBE

ML7815

ML7815A

ML7815A-FBE

ML7815FA

ML7815FA-FBE

ML7818