概述
数据手册25C160ST 概述
2K X 8 SPI BUS SERIAL EEPROM, PDSO8, TSSOP-8
25C160ST 数据手册
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PDF下载25AA160/25LC160/25C160
16K SPI™ Bus Serial EEPROM
DEVICE SELECTION TABLE
PACKAGE TYPES
PDIP/SOIC
Part
Number
VCC
Range
Max Clock
Frequency
Temp
Ranges
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
CS
SO
25C160
25LC160
25AA160
4.5-5.5V
2.5-5.5V
1.8-5.5V
3 MHz
2 MHz
1 MHz
C,I,E
C,I
C,I
WP
VSS
FEATURES
• Low power CMOS technology
- Write current: 3 mA maximum
- Read current: 500 µA typical
- Standby current: 500 nA typical
• 2048 x 8 bit organization
• 16 byte page
BLOCK DIAGRAM
Status
Register
HV Generator
• Write cycle time: 5ms max.
• Self-timed ERASE and WRITE cycles
• Block write protection
- Protect none, 1/4, 1/2, or all of array
• Built-in write protection
EEPROM
Array
Memory
Control
Logic
X
I/O Control
Logic
- Power on/off data protection circuitry
- Write enable latch
Dec
- Write protect pin
• Sequential read
• High reliability
Page Latches
Y Decoder
- Endurance: 1M cycles (guaranteed)
- Data retention: > 200 years
- ESD protection: > 4000 V
• 8-pin PDIP and SOIC packages
• Temperature ranges supported:
- Commercial (C):
- Industrial (I):
- Automotive (E) (25C160):
SI
SO
CS
SCK
Sense Amp.
R/W Control
HOLD
WP
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
Vcc
Vss
DESCRIPTION
The Microchip Technology Inc. 25AA160/25LC160/
25C160 (25XX160*) are 16K bit serial Electrically Eras-
able PROMs. The memory is accessed via a simple
Serial Peripheral Interface (SPI) compatible serial bus.
The bus signals required are a clock input (SCK) plus
separate data in (SI) and data out (SO) lines. Access to
the device is controlled through a chip select (CS)
input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
chip select, allowing the host to service higher priority
interrupts.
*25XX160 is used in this document as a generic part number for the 25AA160/25LC160/25C160 devices.
SPI is a trademark of Motorola.
1998 Microchip Technology Inc.
DS21231B-page 1
25AA160/25LC160/25C160
FIGURE 1-1: AC TEST CIRCUIT
1.0
ELECTRICAL
CHARACTERISTICS
VCC
1.1
Maximum Ratings*
2.25 K
Vcc ...................................................................................7.0V
All inputs and outputs w.r.t. Vss .................-0.6V to Vcc+1.0V
Storage temperature .......................................-65°C to 150°C
Ambient temperature under bias.....................-65°C to 125°C
Soldering temperature of leads (10 seconds) .............+300°C
ESD protection on all pins.................................................4kV
SO
1.8 K
100 pF
*Notice: Stresses above those listed under ‘Maximum ratings’ may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for an extended
period of time may affect device reliability
1.2
AC Test Conditions
AC Waveform:
VLO = 0.2V
TABLE 1-1:
Name
PIN FUNCTION TABLE
Function
VHI = VCC - 0.2V
(Note 1)
(Note 2)
VHI = 4.0V
CS
SO
Chip Select Input
Serial Data Output
Serial Data Input
Serial Clock Input
Write Protect Pin
Ground
Timing Measurement Reference Level
Input
0.5 VCC
0.5 VCC
SI
Output
SCK
WP
Note 1: For VCC ≤ 4.0V
2: For VCC > 4.0V
VSS
VCC
HOLD
Supply Voltage
Hold Input
TABLE 1-2:
DC CHARACTERISTICS
All parameters apply over the Commercial (C): TAMB = 0°C to +70°C
VCC = 1.8V to 5.5V
specified operating ranges
unless otherwise noted.
Industrial (I):
Automotive (E): TAMB = -40°C to +125°C
TAMB = -40°C to +85°C
VCC = 1.8V to 5.5V
VCC = 4.5V to 5.5V (25C160 only)
Parameter
Symbol
Min
Max
Units
Test Conditions
VCC ≥ 2.7V (Note)
VIH1
VIH2
VIL1
VIL2
VOL
VOL
VOH
ILI
2.0
0.7 VCC
-0.3
VCC+1
VCC+1
0.8
V
V
High level input voltage
VCC< 2.7V (Note)
V
VCC ≥ 2.7V (Note)
Low level input voltage
Low level output voltage
-0.3
0.3 VCC
0.4
V
VCC < 2.7V (Note)
—
V
IOL = 2.1 mA
—
0.2
V
IOL = 1.0 mA, VCC < 2.5V
IOH =-400 µA
High level output voltage
Input leakage current
Output leakage current
VCC -0.5
-10
—
V
10
µA
µA
pF
CS = VCC, VIN = VSS TO VCC
CS = VCC, VOUT = VSS TO VCC
ILO
-10
10
Internal Capacitance
(all inputs and outputs)
CINT
—
7
TAMB = 25°C, CLK = 1.0 MHz,
VCC = 5.0V (Note)
ICC Read
ICC Write
ICCS
—
—
1
500
mA
µA
VCC = 5.5V; FCLK=3.0 MHz; SO = Open
VCC = 2.5V; FCLK=2.0 MHz; SO = Open
Operating Current
Standby Current
—
—
5
3
mA
mA
VCC= 5.5V
VCC = 2.5V
—
—
5
1
µA
µA
CS = Vcc = 5.5V, Inputs tied to VCC or VSS
CS = Vcc = 2.5V, Inputs tied to VCC or VSS
Note: This parameter is periodically sampled and not 100% tested.
DS21231B-page 2
1998 Microchip Technology Inc.
25AA160/25LC160/25C160
TABLE 1-3:
AC CHARACTERISTICS
All parameters apply over the
Commercial (C): Tamb = 0°C to +70°C
VCC = 1.8V to 5.5V
specified operating ranges unless Industrial (I):
Tamb = -40°C to +85°C
Tamb = -40°C to +125°C
VCC = 1.8V to 5.5V
VCC = 4.5V to 5.5V (25C160 only)
otherwise noted.
Automotive (E):
Parameter
Symbol
Min
Max
Units
Test Conditions
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
Clock Frequency
CS Setup Time
CS Hold Time
FCLK
—
—
—
3
2
1
MHz
MHz
MHz
TCSS
TCSH
100
250
500
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
150
250
475
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
CS Disable Time
Data Setup Time
TCSD
TSU
500
—
ns
30
50
50
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
Data Hold Time
THD
50
100
100
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
CLK Rise Time
CLK Fall Time
Clock High Time
TR
TF
—
—
2
2
µs
µs
(Note 1)
(Note 1)
THI
150
250
475
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
Clock Low Time
TLO
150
250
475
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
Clock Delay Time
Clock Enable Time
TCLD
TCLE
TV
50
50
—
—
ns
ns
Output Valid from
Clock Low
—
—
—
150
250
475
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
Output Hold Time
THO
TDIS
0
—
ns
(Note 1)
Output Disable Time
—
—
—
200
250
500
ns
ns
ns
VCC = 4.5V to 5.5V (Note 1)
VCC = 2.5V to 4.5V (Note 1)
VCC = 1.8V to 2.5V (Note 1)
HOLD Setup Time
THS
THH
THZ
THV
100
100
200
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
HOLD Hold Time
100
100
200
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
HOLD Low to Output High-Z
HOLD High to Output Valid
100
150
200
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V (Note 1)
VCC = 2.5V to 4.5V (Note 1)
VCC = 1.8V to 2.5V (Note 1)
100
150
200
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
VCC = 2.5V to 4.5V
VCC = 1.8V to 2.5V
Internal Write Cycle Time
Endurance
TWC
—
5
ms
—
1M
—
E/W Cycles (Note 2)
Note 1: This parameter is periodically sampled and not 100% tested.
2: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific application, please
consult the Total Endurance Model which can be obtained on ourwebsite.
1998 Microchip Technology Inc.
DS21231B-page 3
25AA160/25LC160/25C160
FIGURE 1-2: HOLD TIMING
CS
THH
THS
THS
THH
SCK
SO
THZ
THV
high impedance
n
n+2
n+2
n+1
n
n-1
TSU
don’t care
n
n+1
n
n-1
SI
HOLD
FIGURE 1-3: SERIAL INPUT TIMING
TCSD
CS
TCLE
TCLD
TCSS
TR
TF
TCSH
Mode 1,1
Mode 0,0
Tsu
SCK
SI
THD
MSB in
LSB in
high impedance
SO
FIGURE 1-4: SERIAL OUTPUT TIMING
CS
TCSH
TDIS
THI
TLO
Mode 1,1
Mode 0,0
SCK
TV
MSB out
SO
ISB out
don’t care
SI
DS21231B-page 4
1998 Microchip Technology Inc.
25AA160/25LC160/25C160
2.5
Write Protect (WP)
2.0
PIN DESCRIPTIONS
This pin is used in conjunction with the WPEN bit in
the status register to prohibit writes to the non-volatile
bits in the status register. When WP is low and WPEN
is high, writing to the non-volatile bits in the status reg-
ister is disabled. All other operations function normally.
When WP is high, all functions, including writes to the
non-volatile bits in the status register operate normally.
If the WPEN bit is set, WP low during a status register
write sequence will disable writing to the status regis-
ter. If an internal write cycle has already begun, WP
going low will have no effect on the write.
2.1
Chip Select (CS)
A low level on this pin selects the device. A high level
deselects the device and forces it into standby mode.
However, a programming cycle which is already initi-
ated or in progress will be completed, regardless of
the CS input signal. If CS is brought high during a pro-
gram cycle, the device will go in standby mode as
soon as the programming cycle is complete. As soon
as the device is deselected, SO goes to the high
impedance state, allowing multiple parts to share the
same SPI bus. A low to high transition on CS after a
valid write sequence initiates an internal write cycle.
After power-up, a low level on CS is required prior to
any sequence being initiated.
The WP pin function is blocked when the WPEN bit in
the status register is low. This allows the user to install
the 25xx160 in a system with WP pin grounded and
still be able to write to the status register. The WP pin
functions will be enabled when the WPEN bit is set
high.
2.2
Serial Input (SI)
The SI pin is used to transfer data into the device. It
receives instructions, addresses, and data. Data is
latched on the rising edge of the serial clock.
2.6
Hold (HOLD)
The HOLD pin is used to suspend transmission to the
25XX160 while in the middle of a serial sequence with-
out having to re-transmit the entire sequence over at a
later time. It must be held high any time this function is
not being used. Once the device is selected and a
serial sequence is underway, the HOLD pin may be
pulled low to pause further serial communication with-
out resetting the serial sequence. The HOLD pin must
be brought low while SCK is low, otherwise the HOLD
function will not be invoked until the next SCK high to
low transition. The 25XX160 must remain selected
during this sequence. The SI, SCK, and SO pins are in
a high impedance state during the time the part is
paused and transitions on these pins will be ignored.
To resume serial communication, HOLD must be
brought high while the SCK pin is low, otherwise serial
communication will not resume. Lowering the HOLD
line at any time will tri-state the SO line.
2.3
Serial Output (SO)
The SO pin is used to transfer data out of the
25XX160. During a read cycle, data is shifted out on
this pin after the falling edge of the serial clock.
2.4
Serial Clock (SCK)
The SCK is used to synchronize the communication
between a master and the 25XX160. Instructions,
addresses, or data present on the SI pin are latched
on the rising edge of the clock input, while data on the
SO pin is updated after the falling edge of the clock
input.
1998 Microchip Technology Inc.
DS21231B-page 5
25AA160/25LC160/25C160
3.3
Write Sequence
3.0
FUNCTIONAL DESCRIPTION
Prior to any attempt to write data to the 25XX160, the
write enable latch must be set by issuing the WREN
instruction (Figure 3-4). This is done by setting CS low
and then clocking out the proper instruction into the
25XX160. After all eight bits of the instruction are
transmitted, the CS must be brought high to set the
write enable latch. If the write operation is initiated
immediately after the WREN instruction without CS
being brought high, the data will not be written to the
array because the write enable latch will not have
been properly set.
3.1
PRINCIPLES OF OPERATION
The 25XX160 are 2048 byte Serial EEPROMs
designed to interface directly with the Serial Peripheral
Interface (SPI) port of many of today’s popular micro-
controller families, including Microchip’s PIC16C6X/7X
microcontrollers. It may also interface with
microcontrollers that do not have a built-in SPI port by
using discrete
the software.
I/O lines programmed properly with
The 25XX160 contains an 8-bit instruction register.
The part is accessed via the SI pin, with data being
clocked in on the rising edge of SCK. The CS pin must
be low and the HOLD pin must be high for the entire
operation. The WP pin must be held high to allow writ-
ing to the memory array.
Once the write enable latch is set, the user may pro-
ceed by setting the CS low, issuing a write instruction,
followed by the 16-bit address, with the five MSBs of
the address being don’t care bits, and then the data to
be written. Up to 16 bytes of data can be sent to the
25XX160 before a write cycle is necessary. The only
restriction is that all of the bytes must reside in the
same page. A page address begins with XXXX XXXX
XXXX 0000 and ends with XXXX XXXX XXXX 1111. If
the internal address counter reaches XXXX XXXX
XXXX 1111 and the clock continues, the counter will
roll back to the first address of the page and overwrite
any data in the page that may have been written.
Table 3-1 contains a list of the possible instruction
bytes and format for device operation. All instructions,
addresses, and data are transferred MSB first, LSB
last.
Data is sampled on the first rising edge of SCK after
CS goes low. If the clock line is shared with other
peripheral devices on the SPI bus, the user can assert
the HOLD input and place the 25XX160 in ‘HOLD’
mode. After releasing the HOLD pin, operation will
resume from the point when the HOLD was asserted.
For the data to be actually written to the array, the CS
must be brought high after the least significant bit (D0)
of the nth data byte has been clocked in. If CS is
brought high at any other time, the write operation will
not be completed. Refer to Figure 3-2 and Figure 3-3
for more detailed illustrations on the byte write
sequence and the page write sequence respectively.
While the write is in progress, the status register may
be read to check the status of the WPEN, WIP, WEL,
BP1, and BP0 bits (Figure 3-6). A read attempt of a
memory array location will not be possible during a
write cycle. When the write cycle is completed, the
write enable latch is reset.
3.2
Read Sequence
The part is selected by pulling CS low. The 8-bit read
instruction is transmitted to the 25XX160 followed by
the 16-bit address, with the five MSBs of the address
being don’t care bits. After the correct read instruction
and address are sent, the data stored in the memory at
the selected address is shifted out on the SO pin. The
data stored in the memory at the next address can be
read sequentially by continuing to provide clock pulses.
The internal address pointer is automatically incre-
mented to the next higher address after each byte of
data is shifted out. When the highest address is
reached (07FFh), the address counter rolls over to
address 0000h allowing the read cycle to be continued
indefinitely. The read operation is terminated by raising
the CS pin (Figure 3-1).
TABLE 3-1:
INSTRUCTION SET
Instruction Name
Instruction Format
Description
READ
WRITE
WRDI
0000 0011
0000 0010
0000 0100
0000 0110
0000 0101
0000 0001
Read data from memory array beginning at selected address
Write data to memory array beginning at selected address
Reset the write enable latch (disable write operations)
Set the write enable latch (enable write operations)
Read status register
WREN
RDSR
WRSR
Write status register
DS21231B-page 6
1998 Microchip Technology Inc.
25AA160/25LC160/25C160
FIGURE 3-1: READ SEQUENCE
CS
0
0
1
0
2
3
4
5
0
6
7
8
9 10 11
21 22 23 24 25 26 27 28 29 30 31
SCK
SI
instruction
16 bit address
1 15 14 13 12
0
0
0
1
2
1
0
data out
high impedance
7
6
5
4
3
2
1
0
SO
FIGURE 3-2: BYTE WRITE SEQUENCE
CS
Twc
0
0
1
0
2
3
4
5
0
6
1
7
8
9 10 11
21 22 23 24 25 26 27 28 29 30 31
data byte
SCK
SI
instruction
16 bit address
15 14 13 12
0
0
0
0
2
1
0
7
6
5
4
3
2
1
0
high impedance
SO
FIGURE 3-3: PAGE WRITE SEQUENCE
CS
0
0
1
0
2
3
4
5
0
6
7
8
9
10 11
21 22 23 24 25 26 27 28 29 30 31
data byte 1
SCK
SI
instruction
16 bit address
0 15 14 13 12
0
0
0
1
2
1
0
7
6
5
4
3
2
1
0
CS
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCK
SI
data byte 2
data byte 3
data byte n (16 max)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
1998 Microchip Technology Inc.
DS21231B-page 7
25AA160/25LC160/25C160
The following is a list of conditions under which the
write enable latch will be reset:
3.4
Write Enable (WREN) and Write
Disable (WRDI)
• Power-up
The 25XX160 contains a write enable latch.
See
• WRDI instruction successfully executed
• WRSR instruction successfully executed
• WRITE instruction successfully executed
Table 3-3 for the Write Protect Functionality Matrix.
This latch must be set before any write operation will
be completed internally. The WREN instruction will set
the latch, and the WRDI will reset the latch.
FIGURE 3-4: WRITE ENABLE SEQUENCE
CS
0
1
2
3
4
5
6
7
SCK
0
0
0
0
0
1
1
0
SI
high impedance
SO
FIGURE 3-5: WRITE DISABLE SEQUENCE
CS
0
1
2
3
4
5
6
7
SCK
0
0
0
0
0
0
1
0
SI
high impedance
SO
DS21231B-page 8
1998 Microchip Technology Inc.
25AA160/25LC160/25C160
prohibits writes to the array. The state of this bit can
always be updated via the WREN or WRDI commands
regardless of the state of write protection on the status
register. This bit is read only.
3.5
Read Status Register (RDSR)
The RDSR instruction provides access to the status
register. The status register may be read at any time,
even during a write cycle. The status register is for-
matted as follows:
The Block Protection (BP0 and BP1) bits indicate
which blocks are currently write protected. These bits
are set by the user issuing the WRSR instruction.
These bits are non-volatile.
7
6
5
4
3
2
1
0
WPEN
X
X
X
BP1
BP0
WEL
WIP
See Figure 3-6 for the RDSR timing sequence.
The Write-In-Process (WIP) bit indicates whether the
25XX160 is busy with a write operation. When set to a
‘1’ a write is in progress, when set to a ‘0’ no write is in
progress. This bit is read only.
The Write Enable Latch (WEL) bit indicates the sta-
tus of the write enable latch. When set to a ‘1’ the latch
allows writes to the array, when set to a ‘0’ the latch
FIGURE 3-6: READ STATUS REGISTER SEQUENCE
CS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
instruction
0
0
0
0
0
1
0
1
SI
data from status register
high impedance
7
6
5
4
3
2
1
0
SO
1998 Microchip Technology Inc.
DS21231B-page 9
25AA160/25LC160/25C160
only writes to non-volatile bits in the status register are
disabled. See Table 3-3 for a matrix of functionality on
the WPEN bit.
3.6
Write Status Register(WRSR)
The WRSR instruction allows the user to select one of
four levels of protection for the array by writing to the
appropriate bits in the status register. The array is
divided up into four segments. The user has the ability
to write protect none, one, two, or all four of the seg-
ments of the array. The partitioning is controlled as
illustrated in Table 3-2.
See Figure 3-7 for the WRSR timing sequence.
TABLE 3-2:
BP1
ARRAY PROTECTION
Array Addresses
BP0
Write Protected
0
0
0
1
none
The Write Protect Enable (WPEN) bit is a non-volatile
bit that is available as an enable bit for the WP pin.
The Write Protect (WP) pin and the Write Protect
Enable (WPEN) bit in the status register control the
programmable hardware write protect feature. Hard-
ware write protection is enabled when WP pin is low
and the WPEN bit is high. Hardware write protection is
disabled when either the WP pin is high or the WPEN
bit is low. When the chip is hardware write protected,
upper 1/4
(0600h - 07FFh)
upper 1/2
(0400h - 07FFh)
1
1
0
1
all
(0000h - 07FFh)
FIGURE 3-7: WRITE STATUS REGISTER SEQUENCE
CS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
instruction
0
data to status register
7
6
5
4
3
2
1
0
0
0
0
0
0
0
1
SI
high impedance
SO
DS21231B-page 10
1998 Microchip Technology Inc.
25AA160/25LC160/25C160
3.7
Data Protection
3.8
Power On State
The following protection has been implemented to pre-
vent inadvertent writes to the array:
The 25XX160 powers on in the following state:
• The device is in low power standby mode
(CS=1).
• The write enable latch is reset.
• SO is in high impedance state.
• A low level on CS is required to enter active state.
• The write enable latch is reset on power-up.
• A write enable instruction must be issued to set
the write enable latch.
• After a byte write, page write, or status register
write, the write enable latch is reset.
• CS must be set high after the proper number of
clock cycles to start an internal write cycle.
• Access to the array during an internal write cycle
is ignored and programming is continued.
TABLE 3-3:
WPEN
WRITE PROTECT FUNCTIONALITY MATRIX
WP
WEL
Protected Blocks
Unprotected Blocks
Status Register
X
0
1
X
X
X
0
1
1
1
Protected
Protected
Protected
Protected
Protected
Writable
Writable
Writable
Protected
Writable
Protected
Writable
Low
High
1998 Microchip Technology Inc.
DS21231B-page 11
25AA160/25LC160/25C160
NOTES:
DS21231B-page 12
1998 Microchip Technology Inc.
25AA160/25LC160/25C160
NOTES:
1998 Microchip Technology Inc.
DS21231B-page 13
25AA160/25LC160/25C160
NOTES:
DS21231B-page 14
1998 Microchip Technology Inc.
25AA160/25LC160/25C160
25AA160/25LC160/25C160 PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office..
25AA160/25LC160/25C160
—
P = Plastic DIP (300 mil Body), 8-lead
SN = Plastic SOIC (150 mil Body)
ST = TSSOP, 8-lead
Package:
OT = SOT-23, 5 lead
Blank = 0°C to +70°C
I = –40°C to +85°C
E = –40°C to +125°C
Temperature
Range:
24AA00
128 bit 1.8V I2C Serial EEPROM
24AA00T
24LC00
24LC00T
24C00
128 bit 1.8V K I2C Serial EEPROM (Tape and Reel)
128 bit 2.5V I2C Serial EEPROM
Device:
128 bit 2.5V K I2C Serial EEPROM (Tape and Reel)
128 bit 5.0V I2C Serial EEPROM
24C00T
128 bit 5.0V K I2C Serial EEPROM (Tape and Reel)
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
1998 Microchip Technology Inc.
DS21231B-page 15
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC (continued)
Corporate Office
China - Beijing
Microchip Technology Beijing Office
Unit 915
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Technical Support: 480-792-7627
Web Address: http://www.microchip.com
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Tel: 65-334-8870 Fax: 65-334-8850
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Microchip Technology Inc.
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Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999. The
Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs and microperipheral
products. In addition, Microchip’s quality
system for the design and manufacture of
development systems is ISO 9001 certified.
All rights reserved. © 2000 Microchip Technology Incorporated. Printed in the USA. 12/00
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by
updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual
property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellec-
tual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights
reserved. All other trademarks mentioned herein are the property of their respective companies.
DS21231B-page 16
2000 Microchip Technology Inc.
25C160ST 相关器件
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| 25C160T-/P | MICROCHIP | 16K SPI Bus Serial EEPROM | 获取价格 |
|
| 25C160T-/SN | MICROCHIP | 16K SPI Bus Serial EEPROM | 获取价格 |
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| 25C160T-E/OT | MICROCHIP | 2K X 8 SPI BUS SERIAL EEPROM, PDSO5, SOT-23, 5 PIN | 获取价格 |
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| 25C160T-E/SNC22 | MICROCHIP | 2K X 8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, MS-012, SOIC-8 | 获取价格 |
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| 25C160T-E/SNC77 | MICROCHIP | 2K X 8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, MS-012, SOIC-8 | 获取价格 |
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| 25C160T-E/SNVAO | MICROCHIP | 2K X 8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, MS-012, SOIC-8 | 获取价格 |
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| 25C160T-E/ST | MICROCHIP | 2K X 8 SPI BUS SERIAL EEPROM, PDSO8, TSSOP-8 | 获取价格 |
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| 25C160T-ESN | ETC | EEPROM | 获取价格 |
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