27C256-15IP [MICROCHIP]
256K (32K x 8) CMOS EPROM; 256K ( 32K ×8 ) CMOS EPROM型号: | 27C256-15IP |
厂家: | MICROCHIP |
描述: | 256K (32K x 8) CMOS EPROM |
文件: | 总12页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
27C256
256K (32K x 8) CMOS EPROM
FEATURES
PACKAGE TYPES
TSOP
• High speed performance
OE
A11
A9
1
2
3
4
5
6
7
28
27
26
25
24
23
22
A10
CE
D7
D6
D5
D4
D3
- 90 ns access time available
• CMOS Technology for low power consumption
- 20 mA Active current
A8
A13
A14
VCC
- 100 µA Standby current
• Factory programming available
• Auto-insertion-compatible plastic packages
• Auto ID aids automated programming
• Separate chip enable and output enable controls
• High speed “express” programming algorithm
• Organized 32K x 8: JEDEC standard pinouts
- 28-pin Dual-in-line package
VPP
A12
8
9
21
20
19
18
17
16
15
VSS
D2
D1
D0
A0
A1
A2
A7 10
A6 11
A5 12
A4 13
A3 14
PLCC
- 32-pin PLCC Package
5
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
O0
A8
A9
6
- 28-pin SOIC package
7
A11
NC
OE
A10
CE
O7
O6
- 28-pin Thin Small Outline Package (TSOP)
- 28-pin Very Small Outline Package (VSOP)
- Tape and reel
8
9
10
11
12
13
• Data Retention > 200 years
• Available for the following temperature ranges:
- Commercial:
- Industrial:
0˚C to +70˚C
DIP/SOIC
-40˚C to +85˚C
-40˚C to +125˚C
- Automotive:
VPP
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
A14
A13
A8
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
VSS
2
DESCRIPTION
3
4
5
A9
The Microchip Technology Inc. 27C256 is a CMOS
256K bit electrically Programmable Read Only Memory
(EPROM). The device is organized as 32K words by 8
bits (32K bytes). Accessing individual bytes from an
address transition or from power-up (chip enable pin
going low) is accomplished in less than 90 ns. This very
high speed device allows the most sophisticated micro-
processors to run at full speed without the need for
WAIT states. CMOS design and processing enables
this part to be used in systems where reduced power
consumption and reliability are requirements.
6
A11
OE
A10
CE
O7
7
8
9
10
11
12
13
14
O6
O5
O4
O3
VSOP
OE
A11
A9
A8
A13
A14
22
23
24
25
26
27
A10
21
20
19
18
17
16
15
14
13
12
11
10
9
CE
O7
O6
O5
O4
O3
VSS
O2
O1
O0
A0
A1
A2
A complete family of packages is offered to provide the
most flexibility in applications. For surface mount appli-
cations, PLCC, SOIC, VSOP or TSOP packaging is
available. Tape and reel packaging is also available for
PLCC or SOIC packages.
28
1
VCC
VPP
2
3
4
5
6
7
A12
A7
A6
A5
A4
A3
8
1996 Microchip Technology Inc.
DS11001L-page 1
27C256
TABLE 1-1:
Name
PIN FUNCTION TABLE
Function
1.0
ELECTRICAL CHARACTERISTICS
1.1
Maximum Ratings*
VCC and input voltages w.r.t. VSS........-0.6V to +7.25V
A0-A14
CE
Address Inputs
Chip Enable
VPP voltage w.r.t. VSS during
programming .......................................-0.6V to +14.0V
OE
Output Enable
Programming Voltage
Data Output
Voltage on A9 w.r.t. VSS ......................-0.6V to +13.5V
Output voltage w.r.t. VSS ............... -0.6V to VCC +1.0V
Storage temperature .......................... -65˚C to +150˚C
Ambient temp. with power applied ..... -65˚C to +125˚C
VPP
O0 - O7
VCC
+5V Power Supply
Ground
*Notice: Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specification is not implied. Exposure to maximum rating con-
ditions for extended periods may affect device reliability.
VSS
NC
No Connection; No Internal Connec-
tion
NU
Not Used; No External Connection Is
Allowed
TABLE 1-2:
READ OPERATION DC CHARACTERISTICS
VCC = +5V (±10%)
Commercial:
Industrial:
Tamb = 0˚C to +70˚C
Tamb = -40˚C to +85˚C
Tamb = -40°C to +125°C
Extended (Automotive):
Parameter
Part*
Status
Symbol
Min.
Max. Units
Conditions
Input Voltages
all
Logic "1"
Logic "0"
VIH
VIL
2.0
-0.5
VCC+1
0.8
V
V
Input Leakage
all
all
—
ILI
-10
2.4
10
µA VIN = 0 to VCC
Output Voltages
Logic "1"
Logic "0"
VOH
VOL
V
V
IOH = -400 µA
IOL = 2.1 mA
0.45
10
6
Output Leakage
all
all
—
—
ILO
-10
—
µA VOUT = 0V to VCC
Input Capacitance
CIN
pF VIN = 0V; Tamb = 25°C;
f = 1 MHz
Output Capacitance
all
—
COUT
—
12
pF VOUT = 0V; Tamb = 25°C;
f = 1 MHz
Power Supply Current,
Active
C
I,E
TTL input
TTL input
ICC1
ICC2
—
—
20
25
mA VCC = 5.5V; VPP = VCC
mA f = 1 MHz;
OE = CE = VIL;
IOUT = 0 mA;
VIL = -0.1 to 0.8V;
VIH = 2.0 to VCC;
Note 1
Power Supply Current,
Standby
C
I, E
all
TTL input
TTL input
CMOS input
ICC(S)
—
2
3
100
mA
mA
µA CE = VCC ± 0.2V
IPP Read Current
VPP Read Voltage
all
all
Read Mode
Read Mode
IPP
VPP
100
µA VPP = 5.5V
V
VCC-0.7 VCC
* Parts: C=Commercial Temperature Range; I, E=Industrial and Extended Temperature Ranges
Note 1: Typical active current increases .75 mA per MHz up to operating frequency for all temperature ranges.
DS11001L-page 2
1996 Microchip Technology Inc.
27C256
TABLE 1-3:
READ OPERATION AC CHARACTERISTICS
AC Testing Waveform:
Output Load:
VIH = 2.4V and VIL = 0.45V; VOH = 2.0V VOL = 0.8V
1 TTL Load + 100 pF
Input Rise and Fall Times: 10 ns
Ambient Temperature: Commercial:
Tamb = 0˚C to +70˚C
Industrial:
Tamb = -40˚C to +85˚C
Automotive:
Tamb = -40°C to +125°C
27C256-90* 27C256-10* 27C256-12 27C256-15 27C256-20
Min Max Min Max Min Max Min Max Min Max
Parameter
Sym
Units Conditions
Address to Output
Delay
tACC
—
90
—
100
—
120
—
150
—
200
ns CE=OE =VIL
CE to Output Delay
OE to Output Delay
tCE
—
—
0
90
40
30
—
—
0
100
45
—
—
0
120
55
—
—
0
150
65
—
—
0
200
75
ns
ns
ns
OE = VIL
CE = VIL
tOE
tOFF
CE or OE to O/P
High Impedance
30
35
50
55
Output Hold from
tOH
0
—
0
—
0
—
0
—
0
—
ns
Address CE or OE,
whichever goes first
* -10, -90 AC Testing Waveform: VIH = 2.4V and VIL = .45V; VOH = 1.5V and VOL = 1.5V
Output Load: 1 TTL Load + 30pF
FIGURE 1-1: READ WAVEFORMS
VIH
Address Valid
Address
CE
VIL
VIH
VIL
tCE(2)
VIH
VIL
OE
tOFF(1,3)
tOH
tOE(2)
VOH
VOL
Outputs
O0 - O7
High Z
High Z
Valid Output
tACC
Notes: (1) tOFF is specified for OE or CE, whichever occurs first
(2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE
(3) This parameter is sampled and is not 100% tested.
1996 Microchip Technology Inc.
DS11001L-page 3
27C256
TABLE 1-4:
PROGRAMMING DC CHARACTERISTICS
Ambient Temperature: Tamb = 25°C ± 5°C
VCC = 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V
Parameter
Status
Symbol
Min
Max.
Units
Conditions
Input Voltages
Logic”1”
Logic”0”
VIH
VIL
2.0
-0.1
VCC+1
0.8
V
V
Input Leakage
—
ILI
-10
2.4
10
µA
VIN = 0V to VCC
Output Voltages
Logic”1”
Logic”0”
VOH
VOL
V
V
IOH = -400 µA
IOL = 2.1 mA
0.45
20
VCC Current, program & verify
VPP Current, program
—
—
—
ICC2
IPP2
VH
—
—
mA
mA
V
Note 1
Note 1
25
A9 Product Identification
11.5
12.5
Note 1: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP
TABLE 1-5:
PROGRAMMING AC CHARACTERISTICS
for Program, Program Verify
and Program Inhibit Modes
AC Testing Waveform: VIH=2.4V and VIL=0.45V; VOH=2.0V; VOL=0.8V
Output Load: 1 TTL Load + 100pF
Ambient Temperature: Tamb=25°C ± 5°C
VCC= 6.5V ± 0.25V, VPP = VH = 13.0V ± 0.25V
Parameter
Symbol
Min. Max. Units
Remarks
Address Set-Up Time
Data Set-Up Time
Data Hold Time
tAS
tDS
2
2
—
—
µs
µs
µs
µs
ns
µs
µs
µs
µs
µs
ns
tDH
2
—
Address Hold Time
Float Delay (2)
tAH
0
—
tDF
0
130
—
VCC Set-Up Time
Program Pulse Width (1)
CE Set-Up Time
tVCS
tPW
tCES
tOES
tVPS
tOE
2
95
2
105
—
100 µs typical
OE Set-Up Time
2
—
VPP Set-Up Time
Data Valid from OE
2
—
—
100
Note 1: For express algorithm, initial programming width tolerance is 100 µs ±5%.
2: This parameter is only sampled and not 100% tested. Output float is defined as the point where data is no
longer driven (see timing diagram).
DS11001L-page 4
1996 Microchip Technology Inc.
27C256
FIGURE 1-2: PROGRAMMING WAVEFORMS
Program
Verify
VIH
Address
Data
Address Stable
VIL
VIH
VIL
tAS
t DS
tAH
High Z
Data Stable
tDH
Data Out Valid
tDF
(1)
13.0V(2)
5.0V
6.5V(2)
5.0V
VIH
VPP
VCC
CE
tVPS
tVCS
VIL
tOES
tPW
tOE
(1)
VIH
OE
VIL
Notes:
(1) tDF and tOE are characteristics of the device but must be accommodated by the programmer
(2) VCC = 6.5 V ±0.25V, VPP = VH = 13.0V ±0.25V for express algorithm
TABLE 1-6:
MODES
Operation Mode
CE
OE
VPP
A9
O0 - O7
Read
VIL
VIL
VIH
VIH
VIH
VIL
VIL
VIL
VIH
VIL
VIH
X
VCC
VH
X
X
DOUT
DIN
Program
Program Verify
Program Inhibit
Standby
VH
X
DOUT
VH
X
High Z
VCC
VCC
VCC
X
High Z
Output Disable
Identity
VIH
VIL
X
High Z
VH
Identity Code
X = Don’t Care
1.2
Read Mode
For Read operations, if the addresses are stable, the
address access time (tACC) is equal to the delay from
CE to output (tCE). Data is transferred to the output
after a delay from the falling edge of OE (tOE).
(See Timing Diagrams and AC Characteristics)
Read Mode is accessed when:
a) the CE pin is low to power up (enable) the chip
b) the OE pin is low to gate the data to the output
pins
1996 Microchip Technology Inc.
DS11001L-page 5
27C256
1.3
Standby Mode
1.7
Verify
The standby mode is defined when the CE pin is high
(VIH) and a program mode is not defined.
After the array has been programmed it must be veri-
fied to ensure all the bits have been correctly pro-
grammed. This mode is entered when all the following
conditions are met:
When these conditions are met, the supply current will
drop from 20 mA to 100 µA.
a) VCC is at the proper level,
b) VPP is at the proper VH level,
c) the CE line is high, and
d) the OE line is low.
1.4
Output Enable
This feature eliminates bus contention in multiple bus
microprocessor systems and the outputs go to a high
impedance when the following condition is true:
1.8
Inhibit
• The OE pin is high and the program mode is not
defined.
When programming multiple devices in parallel with dif-
ferent data, only CE need be under separate control to
each device. By pulsing the CE line low on a particular
device, that device will be programmed; all other
devices with CE held high will not be programmed with
the data, although address and data will be available on
their input pins.
1.5
Erase Mode (U.V. Windowed Versions)
Windowed products offer the ability to erase the mem-
ory array. The memory matrix is erased to the all 1’s
state when exposed to ultraviolet light. To ensure com-
2
plete erasure, a dose of 15 watt-second/cm is
required. This means that the device window must be
placed within one inch and directly underneath an ultra-
violet lamp with a wavelength of 2537 Angstroms,
intensity of 12,000µW/cm for approximately 20 min-
utes.
1.9
Identity Mode
In this mode specific data is output which identifies the
manufacturer as Microchip Technology Inc. and device
type. This mode is entered when Pin A9 is taken to VH
(11.5V to 12.5V). The CE and OE lines must be at VIL.
A0 is used to access any of the two non-erasable bytes
whose data appears on O0 through O7.
2
1.6
Programming Mode
The Express Algorithm has been developed to improve
on the programming throughput times in a production
environment. Up to ten 100-microsecond pulses are
applied until the byte is verified. No overprogramming
is required. A flowchart of the express algorithm is
shown in Figure 1-3.
Pin
Identity
Input
A0
Output
H
e
x
0 O O O O O O O
7
6
5
4
3
2
1
0
Programming takes place when:
a) VCC is brought to the proper voltage,
b) VPP is brought to the proper VH level,
c) the OE pin is high, and
Manufacturer
Device Type*
VIL
VIH
0
1
0
0
1
0
0
0
1
1
0
1
0
0
1
0
29
8C
* Code subject to change
d) the CE pin is low.
Since the erased state is “1” in the array, programming
of “0” is required. The address to be programmed is set
via pins A0-A14 and the data to be programmed is pre-
sented to pins O0-O7. When data and address are sta-
ble, a low going pulse on the CE line programs that
location.
DS11001L-page 6
1996 Microchip Technology Inc.
27C256
FIGURE 1-3: PROGRAMMING EXPRESS ALGORITHM
Conditions:
Start
Tamb = 25˚C ±5˚C
VCC = 6.5 ±0.25V
VPP = 13.0 ±0.25V
ADDR = First Location
VCC = 6.5V
VPP = 13.0V
X = 0
Program one 100 µs pulse
Increment X
Verify
Byte
Pass
Fail
No
Yes
Device
Failed
X = 10 ?
Last
Address?
Yes
No
Increment Address
VCC = VPP = 4.5V, 5.5V
All
Yes
No
bytes
= original
data?
Device
Passed
Device
Failed
1996 Microchip Technology Inc.
DS11001L-page 7
27C256
NOTES:
DS11001L-page 8
1996 Microchip Technology Inc.
27C256
NOTES:
1996 Microchip Technology Inc.
DS11001L-page 9
27C256
NOTES:
DS11001L-page 10
1996 Microchip Technology Inc.
27C256
27C256 Product Identification System
To order or to obtain information (e.g., on pricing or delivery), please use listed part numbers, and refer to factory or listed sales offices.
27C256 – 90
I
/TS
Package:
L
P
SO
TS
VS
=
=
=
=
=
Plastic Leaded Chip Carrier
Plastic DIP (Mil 600)
Plastic SOIC (Mil 300)
Thin Small Outline Package (TSOP) 8x20mm
Very Small Outline Package (VSOP) 8x13.4mm
Temperature
Range:
Blank
=
=
=
0˚C to +70˚C
-40˚C to +85˚C
-40˚C to +125˚C
I
E
Access
Time:
90
10
12
15
20
=
=
=
=
=
90 ns
100 ns
120 ns
150 ns
200 ns
Device
27C256
256K (32K x 8) CMOS EPROM
1996 Microchip Technology Inc.
DS11001L-page 11
WORLDWIDE SALES & SERVICE
AMERICAS
Corporate Office
ASIA/PACIFIC
China
EUROPE
United Kingdom
Microchip Technology Inc.
Microchip Technology
Arizona Microchip Technology Ltd.
Unit 6, The Courtyard
Meadow Bank, Furlong Road
Bourne End, Buckinghamshire SL8 5AJ
Tel: 44 1628 850303 Fax: 44 1628 850178
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 602 786-7200 Fax: 602 786-7277
Technical Support: 602 786-7627
Web: http://www.microchip.com
Unit 406 of Shanghai Golden Bridge Bldg.
2077 Yan’an Road West, Hongiao District
Shanghai, Peoples Republic of China
Tel: 86 21 6275 5700
Fax: 011 86 21 6275 5060
Hong Kong
Microchip Technology
RM 3801B, Tower Two
Metroplaza
223 Hing Fong Road
Kwai Fong, N.T. Hong Kong
Tel: 852 2 401 1200 Fax: 852 2 401 3431
India
Microchip Technology
No. 6, Legacy, Convent Road
Bangalore 560 025 India
Tel: 91 80 526 3148 Fax: 91 80 559 9840
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Atlanta
Arizona Microchip Technology SARL
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Tel: 33 1 69 53 63 20 Fax: 33 1 69 30 90 79
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Tel: 49 89 627 144 0 Fax: 49 89 627 144 44
Microchip Technology Inc.
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Chicago
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Microchip Technology Inc.
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Itasca, IL 60143
Tel: 708 285-0071 Fax: 708 285-0075
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Tel: 65 334 8870 Fax: 65 334 8850
Taiwan, R.O.C
Microchip Technology
10F-1C 207
Tung Hua North Road
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Tel: 886 2 717 7175 Fax: 886 2 545 0139
Tel: 39 39 6899939 Fax: 39 39 689 9883
JAPAN
Microchip Technology Intl. Inc.
Benex S-1 6F
3-18-20, Shin Yokohama
Kohoku-Ku, Yokohama
Kanagawa 222 Japan
Two Prestige Place
Miamisburg, OH 45342
Tel: 513 291-1654 Fax: 513 291-9175
Tel: 81 45 471 6166 Fax: 81 45 471 6122
9/3/96
Los Angeles
Microchip Technology Inc.
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 714 263-1888 Fax: 714 263-1338
NewYork
Microchip Technmgy Inc.
150 Motor Parkway, Suite 416
Hauppauge, NY 11788
Tel: 516 273-5305 Fax: 516 273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408 436-7950 Fax: 408 436-7955
Toronto
Microchip Technology Inc.
5925 Airport Road, Suite 200
Mississauga, Ontario L4V 1W1, Canada
Tel: 905 405-6279 Fax: 905 405-6253
All rights reserved. 1996, Microchip Technology Incorporated, USA. 9/96
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No repre-
sentation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement
of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not autho-
rized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and
name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
DS11001L-page 12
1996 Microchip Technology Inc.
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