5962-9317704VNC [MICROCHIP]

FIFO, 16KX9, 15ns, Asynchronous, CMOS, FP-28;
5962-9317704VNC
型号: 5962-9317704VNC
厂家: MICROCHIP    MICROCHIP
描述:

FIFO, 16KX9, 15ns, Asynchronous, CMOS, FP-28

先进先出芯片
文件: 总20页 (文件大小:1591K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Features  
First-in First-out Dual Port Memory  
16384 bits x 9 Organization  
Fast Flag and Access Times: 15, 30 ns  
Wide Temperature Range: - 55°C to + 125°C  
Fully Expandable by Word Width or Depth  
Asynchronous Read/Write Operations  
Empty, Full and Half Flags in Single Device Mode  
Retransmit Capability  
Bi-directional Applications  
Battery Back-up Operation: 2V Data Retention  
TTL Compatible  
Single 5V ± 10% Power Supply  
Rad. Tolerant  
High Speed  
16 Kb x 9  
QML Q and V with SMD 5962-93177  
Description  
Parallel FIFO  
The M67206F implements a first-in first-out algorithm, featuring asynchronous  
read/write operations. The FULL and EMPTY flags prevent data overflow and under-  
flow. The Expansion logic allows unlimited expansion in word size and depth with no  
timing penalties. Twin address pointers automatically generate internal read and write  
addresses, and no external address information is required. Address pointers are  
automatically incremented with the write pin and read pin. The 9 bits wide data are  
used in data communications applications where a parity bit for error checking is nec-  
essary. The Retransmit pin resets the Read pointer to zero without affecting the write  
pointer. This is very useful for retransmitting data when an error is detected in the  
system.  
M67206F  
Using an array of eight transistors (8T) memory cell, the M67206F combines an  
extremely low standby supply current (typ = 0.1 µA) with a fast access time at 15 ns  
over the full temperature range. All versions offer battery backup data retention capa-  
bility with a typical power consumption at less than 2 µW.  
The M67206F is processed according to the methods of the latest revision of the MIL  
PRF 38535 (Q and V) or ESA SCC 9000.  
Rev. 4143F–AERO–06/02  
1
Block Diagram  
Pin Configuration  
DIL ceramic 28-pin 300 mils  
FP 28-pin 400 mils  
2
M67206F  
4143F–AERO–06/02  
M67206F  
Pin Description  
Names  
I0-8  
Q0-8  
W
Description  
Inputs  
Outputs  
Write Enable  
Read Enable  
Reset  
R
RS  
EF  
Empty Flag  
FF  
Full Flag  
XO/HF  
XI  
Expansion Out/Half-Full Flag  
Expansion IN  
First Load/Retransmit  
Power Supply  
Ground  
FL/RT  
VCC  
GND  
Data In (I0 - I8)  
Reset (RS)  
Data inputs for 9-bit data  
Reset occurs whenever the Reset (RS) input is taken to a low state. Reset returns both  
internal read and write pointers to the first location. A reset is required after power-up  
before a write operation can be enabled. Both the Read Enable (R) and Write Enable  
(W) inputs must be in the high state during the period shown in Figure 1 (i.e. tRSS before  
the rising edge of RS) and should not change until tRSR after the rising edge of RS. The  
Half-Full Flag (HF) will be reset to high After Reset (RS)  
Figure 1. Reset  
Notes: 1. EF, FF and HF may change status during reset, but flags will be valid at tRSC  
2. W and R = VIH around the rising edge of RS.  
.
3
4143F–AERO–06/02  
Write Enable (W)  
A write cycle is initiated on the falling edge of this input if the Full Flag (FF) is not set.  
Data set-up and hold times must be maintained in the rise time of the leading edge of  
the Write Enable (W). Data is stored sequentially in the Ram array, regardless of any  
current read operation.  
Once half the memory is filled, and during the falling edge of the next write operation,  
the Half-Full Flag (HF) will be set to low and remain in this state until the difference  
between the write and read pointers is less than or equal to half of the total available  
memory in the device. The Half-Full Flag (HF) is then reset by the rising edge of the  
read operation.  
To prevent data overflow, the Full Flag (FF) will go low, inhibiting further write opera-  
tions. On completion of a valid read operation, the Full Flag (FF) will go high after TRFF,  
allowing a valid write to begin. When the FIFO stack is full, the internal write pointer is  
blocked from W, so that external changes to W will have no effect on the full FIFO stack.  
Read Enable (R)  
A read cycle is initiated on the falling edge of the Read Enable (R) provided that the  
Empty Flag (EF) is not set. The data is accessed on a first-in/first-out basis, not includ-  
ing any current write operations. After Read Enable (R) goes high, the Data Outputs (Q0  
- Q8) will return to a high impedance state until the next Read operation. When all the  
data in the FIFO stack has been read, the Empty Flag (EF) will go low, allowing the  
“final” read cycle, but inhibiting further read operations while the data outputs remain in  
a high impedance state. Once a valid write operation has been completed, the Empty  
Flag (EF) will go high after tWEF and a valid read may then be initiated. When the FIFO  
stack is empty, the internal read pointer is blocked from R, so that external changes to R  
will have no effect on the empty FIFO stack.  
First Load/Retransmit  
(FL/RT)  
This pin is a dual-purpose input. In the Depth Expansion Mode, this pin is connected to  
ground to indicate that it is the first loaded (see Operating Modes). In the Single Device  
Mode, this pin acts as the retransmit input. The Single Device Mode is initiated by con-  
necting the Expansion In (XI) to ground.  
The M67206F can be set to retransmit data when the Retransmit Enable Control (RT)  
input is pulsed low. A retransmit operation will set the internal read point to the first loca-  
tion and will not affect the write pointer. Read Enable (R) and Write Enable (W) must be  
in the high state during retransmit. The retransmit feature is intended for use when a  
number of writes are equal to or less than the depth of the FIFO has occurred since the  
last RS cycle. The retransmit feature is not compatible with the Depth Expansion Mode  
and will affect the Half-Full Flag (HF), in accordance with the relative locations of the  
read and write pointers.  
Expansion In (XI)  
Full Flag (FF)  
The XI input is a dual-purpose pin. Expansion In (XI) is connected to GND to indicate an  
operation in the single device mode. Expansion In (XI) is connected to Expansion Out  
(XO) of the previous device in the Depth Expansion or Daisy Chain modes.  
The Full Flag (FF) will go low, inhibiting further write operations when the write pointer is  
one location less than the read pointer, indicating that the device is full. If the read  
pointer is not moved after Reset (RS), the Full Flag (FF) will go low after 16384 writes.  
Empty Flag (EF)  
The Empty Flag (EF) will go low, inhibiting further read operations when the read pointer  
is equal to the write pointer, indicating that the device is empty.  
4
M67206F  
4143F–AERO–06/02  
M67206F  
Expansion Out/Half-Full  
Flag (XO/HF)  
The XO/HF pin is a dual-purpose output. In the single device mode, when Expansion In  
(XI) is connected to ground, this output acts as an indication of a half-full memory.  
After half the memory is filled and on the falling edge of the next write operation, the  
Half-Full Flag (HF) will be set to low and will remain set until the difference between the  
write and read pointers is less than or equal to half of the total memory of the device.  
The Half-Full Flag (HF) is then reset by the rising edge of the read operation.  
In the Depth Expansion Mode, Expansion In (XI) is connected to Expansion Out (XO) of  
the previous device. This output acts as a signal to the next device in the Daisy Chain by  
providing a pulse to the next device when the previous device reaches the last memory  
location.  
Data Output (Q0 - Q8)  
DATA output for 9-bit wide data. This data is in a high impedance condition whenever  
Read (R) is in a high state.  
5
4143F–AERO–06/02  
Functional Description  
Single Device Mode  
A single M67206F may be used when the application requirements are for 16384 words  
or less. The M67206F is in a Single Device Configuration when the Expansion In (XI) control  
input is grounded (see Figure 2). In this mode the Half-Full Flag (HF), which is an active low  
output, is shared with Expansion Out (XO).  
Figure 2. Block Diagram of Single 16384 bits × 9  
HF  
(HALF-FULL FLAG)  
(W)  
(R)  
(Q)  
READ  
WRITE  
HF  
9
9
DATAOUT  
DATAIN  
(I)  
(EF)  
(RT)  
EMPTY FLAG  
RETRANSMIT  
FULL FLAG (FF)  
(RS)  
RESET  
EXPANSION IN (XI)  
M67206F  
Width Expansion Mode  
Word width may be increased simply by connecting the corresponding input control sig-  
nals of multiple devices. Status flags (EF, FF and HF) can be detected from any device.  
Figure 3 demonstrates an 18-bit word width by using two M67206F. Any word width can be  
attained by adding additional M67206F.  
Figure 3. Block Diagram of 16384 bits x 18 FIFO Memory Used in Width Expansion Mode  
Note:  
Flag detection is accomplished by monitoring the FF, EF and the HF signals on either (any) device used in the width expansion  
configuration. Do not connect any output control signals together.  
6
M67206F  
4143F–AERO–06/02  
M67206F  
Table 1. Reset and Retransmit  
Single Device Configuration/Width Expansion Mode  
Inputs  
Internal Status  
Write Pointer  
Outputs  
Mode  
RS  
0
RT  
X
XI  
0
Read Pointer  
Location Zero  
Location Zero  
Increment(1)  
EF  
0
FF  
1
HF  
1
Reset  
Location Zero  
Unchanged  
Increment(1)  
1
0
0
X
X
X
Retransmit  
Read/Write  
1
1
0
X
X
X
Note:  
1. Pointer will increment if flag is high.  
Table 2. Reset and First Load Truth Table  
Depth Expansion/Compound Expansion Mode  
Inputs  
Internal Status  
Outputs  
Mode  
RS  
FL  
XI  
Read Pointer  
Write Pointer  
EF  
FF  
0
0
(1)  
0
1
1
Reset First Device  
Location Zero  
Location Zero  
Reset All Other  
Devices  
0
1
1
(1)  
(1)  
Location Zero  
X
Location Zero  
X
0
X
X
X
Read/Write  
Note:  
1. XI is connected to XO of previous device.  
See Figure 4.  
Depth Expansion (Daisy The M67206F can be easily adapted for applications which require more than 16384  
words. Figure 4 demonstrates Depth Expansion using three M67206Fs. Any depth can  
be achieved by adding an additional M67206F.  
Chain) Mode  
The M67206F operates in the Depth Expansion configuration if the following conditions  
are met:  
1. The first device must be designated by connecting the First Load (FL) control  
input to ground.  
2. All other devices must have FL in the high state.  
3. The Expansion Out (XO) pin of each device must be connected to the Expansion In  
(XI) pin of the next device. See Figure 4  
4. External logic is needed to generate a composite Full Flag (FF) and Empty Flag  
(EF). This requires that all EF’s and all FFs be ORed (i.e. all must be set to generate the  
correct composite FF or EF). See Figure 4.  
5. The Retransmit (RT) function and Half-Full Flag (HF) are not available in the Depth  
Expansion Mode.  
Compound Expansion  
Module  
It is quite simple to apply the two expansion techniques described above together to cre-  
ate large FIFO arrays (see Figure 5).  
7
4143F–AERO–06/02  
Bi-directional Mode  
Applications which require data buffering between two systems (each system being  
capable of Read and Write operations) can be created by coupling M67206F as shown  
in Figure 6. Care must be taken to ensure that the appropriate flag is monitored by each  
system (i.e. FF is monitored on the device on which W is in use; EF is monitored on the device  
on which R is in use). Both Depth Expansion and Width Expansion may be used in this mode.  
Data Flow – Through  
Modes  
Two types of flow-through modes are permitted: a read flow-through and a write flow-  
through mode. In the read flow-through mode (Figure 17) the FIFO stack allows a single  
word to be read after one word has been written to an empty FIFO stack. The data is  
enabled on the bus at (tWEF + tA) ns after the leading edge of W which is known as the  
first write edge and remains on the bus until the R line is raised from low to high, after which the  
bus will go into a three-state mode after tRHZ ns. The EF line will show a pulse indicating tem-  
porary reset and then will be set. In the interval in which R is low, more words may be written to  
the FIFO stack (the subsequent writes after the first write edge will reset the Empty Flag); how-  
ever, the same word (written on the first write edge) presented to the output bus as the read  
pointer will not be incremented if R is low. On toggling R, the remaining words written to the  
FIFO will appear on the output bus in accordance with the read cycle timings.  
In the write flow-through mode (Figure 18), the FIFO stack allows a single word of data  
to be written immediately after a single word of data has been read from a full FIFO  
stack. The R line causes the FF to be reset, but the W line, being low, causes it to be set again  
in anticipation of a new data word. The new word is loaded into the FIFO stack on the leading  
edge of W. The W line must be toggled when FF is not set in order to write new data into the  
FIFO stack and to increment the write pointer.  
Figure 4. Block Diagram of 49152 bits × 9 FIFO Memory (Depth Expansion)  
8
M67206F  
4143F–AERO–06/02  
M67206F  
Figure 5. Compound FIFO Expansion  
Notes: 1. For depth expansion block see section on Depth Expansion and Figure 4.  
2. For Flag detection see section on Width Expansion and Figure 3.  
Figure 6. Bi-directional FIFO Mode  
9
4143F–AERO–06/02  
Electrical Characteristics  
Absolute Maximum Ratings  
*NOTICE:  
Stresses beyond those listed under "Absolute Maxi-  
mum Ratings” may cause permanent damage to the  
device. This is a stress rating only and functional oper-  
ation of the device at these or any other conditions  
beyond those indicated in the operational sections of  
this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may  
affect device reliability.  
Supply voltage (VCC - GND): .............................- 0.5V to 7.0V  
Input or Output voltage applied: (GND - 0.3V) to (Vcc + 0.3V)  
Storage temperature:................................. - 65 °C to + 150 °C  
DC Parameters  
DC Test Conditions  
TA = -55°C to + 125°C; Vss = 0V; Vcc = 4.5V to 5.5V  
Parameter  
Description  
M67206F-30  
M67206F-15  
Unit  
Value  
Operating  
supply current  
(1)  
ICCOP  
110  
120  
5
mA  
Max  
Standby  
supply current  
(2)  
ICCSB  
5
mA  
µA  
Max  
Max  
Power down  
current  
(3)  
ICCPD  
400  
400  
1.  
2.  
3.  
Icc measurements are made with outputs open.  
R = W = RS = FL/RT = VIH.  
All input = Vcc.  
Parameter  
ILI (1)  
Description  
M67206F  
Unit  
µA  
µA  
V
Value  
Input leakage current  
Output leakage current  
Input low voltage  
Input high voltage  
Output low voltage  
Output high voltage  
Input capacitance  
Output capacitance  
1
1
Max  
Max  
Max  
Min  
ILO (2)  
VIL (3)  
0.8  
2.2  
0.4  
2.4  
8
VIH(3)  
V
VOL (4)  
V
Max  
Min  
VOH(4)  
V
C IN (5)  
pF  
pF  
Max  
Max  
C OUT(5)  
8
1.  
2.  
3.  
4.  
5.  
0.4 Vin Vcc.  
R = VIH, 0.4 VOUT VCC.  
VIH max = Vcc + 0.3 V. VIL min = -0.3V or -1V pulse width 50 ns. For XI input, VIH = 2.8V  
Vcc min, IOL = 8 mA, IOH = -2 mA.  
Guaranteed but not tested.  
10  
M67206F  
4143F–AERO–06/02  
M67206F  
AC Test Conditions  
Input pulse levels: Gnd to 3.0V  
Input rise/Fall times: 5 ns  
Output reference levels: 1.5V  
Output load: See Figure 7  
Input timing reference levels: 1.5V  
Figure 7. Output Load  
Table 3. AC Test Conditions  
M67206F- 15  
M67206F- 30  
Unit  
(4)  
Symbol (1)  
Read Cycle  
TRLRL  
Symbol (2)  
Parameter (3)  
Min  
Max  
Min  
Max  
tRC  
tA  
25  
15  
40  
30  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Read cycle time  
TRLQV  
Access time  
TRHRL  
tRR  
10  
15  
0
10  
30  
5
Read recovery time  
Read pulse width (5)  
Read low to data low Z (6)  
Write low to data low Z (6) (7)  
Data valid from read high  
Read high to data high Z(6)  
TRLRH  
tRPW  
tRLZ  
tWLZ  
tDV  
TRLQX  
TWHQX  
3
5
TRHQX  
5
5
TRHQZ  
tRHZ  
15  
20  
Write Cycle  
TWLWL  
tWC  
tWPW  
tWR  
tDS  
25  
15  
10  
9
40  
30  
10  
18  
0
ns  
ns  
ns  
ns  
ns  
Write cycle time  
Write pulse width(5)  
Write recovery time  
Data set-up time  
Data hold time  
TWLWH  
TWHWL  
TDVWH  
TWHDX  
tDH  
0
Reset Cycle  
TRSLWL  
TRSLRSH  
tRSC  
tRS  
25  
15  
40  
30  
ns  
ns  
Reset cycle time  
Reset pulse width (5)  
11  
4143F–AERO–06/02  
Table 3. AC Test Conditions (Continued)  
M67206F- 15  
M67206F- 30  
Unit  
(4)  
Symbol (1)  
TWHRSH  
TRSHWL  
Retransmit Cycle  
TRTLWL  
Symbol (2)  
tRSS  
Parameter (3)  
Min  
20  
Max  
Min  
30  
Max  
ns  
ns  
Reset set-up time  
tRSR  
Reset recovery time  
10  
10  
tRTC  
tRT  
25  
15  
15  
10  
40  
30  
30  
10  
ns  
ns  
ns  
ns  
Retransmit cycle time  
TRTLRTH  
TWHRTH  
TRTHWL  
Flags  
Retransmit pulse width(5)  
Retransmit set-up time(6)  
Retransmit recovery time  
tRTS  
tRTR  
TRSLEFL  
TRSLFFH  
TRLEFL  
tEFL  
tHFH, tFFH  
tREF  
25  
25  
15  
25  
30  
30  
30  
30  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Reset to EF low  
Reset to HF/FF high  
Read low to EF low  
Read high to FF high  
Read width after EF high  
Write high to EF high  
Write low to FF low  
Write low to HF low  
Read high to HF high  
Write width after FF high  
TRHFFH  
TEFHRH  
TWHEFH  
TWLFFL  
tRFF  
tRPE  
15  
30  
tWEF  
15  
20  
30  
30  
30  
30  
30  
30  
tWFF  
TWLHFL  
TRHHFH  
TFFHWH  
Expansion  
TWLXOL  
TWHXOH  
TXILXIH  
tWHF  
tRHF  
tWPF  
15  
30  
tXOL  
tXOH  
tXI  
15  
15  
30  
30  
ns  
ns  
ns  
ns  
ns  
Read/Write to XO low  
Read/Write to XO high  
XI pulse width  
15  
10  
10  
30  
10  
10  
TXIHXIL  
tXIR  
tXIS  
XI recovery time  
XI set-up time  
TXILRL  
1.  
STD symbol.  
ALT symbol.  
Timings referenced as in AC test conditions.  
All parameters tested only.  
Pulse widths less than minimum value are not allowed.  
Values guaranteed by design, not currently tested.  
Only applies to read data flow-through mode.  
2.  
3.  
4.  
5.  
6.  
7.  
12  
M67206F  
4143F–AERO–06/02  
M67206F  
Figure 8. Asynchronous Write and Read Operation  
Figure 9. Full Flag from Last Write to First Read  
Figure 10. Empty Flag from Last Read to First Write  
13  
4143F–AERO–06/02  
Figure 11. Retransmit  
Figure 12. Empty Flag Timing  
W
tWEF  
EF  
R
tRPE  
Figure 13. Full Flag Timing  
Figure 14. Half Full Flag Timing  
14  
M67206F  
4143F–AERO–06/02  
M67206F  
Figure 15. Expansion Out  
Figure 16. Expansion In  
Figure 17. Read Data Flow Through Mode  
15  
4143F–AERO–06/02  
Figure 18. Write Data Flow Through Mode  
16  
M67206F  
4143F–AERO–06/02  
M67206F  
Ordering Information  
Temperature  
Range  
Part Number  
Speed  
15 ns  
15 ns  
30 ns  
15 ns  
30 ns  
15 ns  
30 ns  
15 ns  
30 ns  
15 ns  
15 ns  
30 ns  
15 ns  
30 ns  
15 ns  
30 ns  
15 ns  
30 ns  
15 ns  
15 ns  
15 ns  
Package  
SB28.3  
SB28.3  
SB28.3  
SB28.3  
SB28.3  
SB28.3  
SB28.3  
SB28.3  
SB28.3  
FP28.4  
FP28.4  
FP28.4  
FP28.4  
FP28.4  
FP28.4  
FP28.4  
FP28.4  
FP28.4  
Die  
Quality Flow  
Engineering Samples  
Mil.  
MMCP-67206FV-15-E(1)  
MMCP-67206FV-15  
MMCP-67206FV-30  
SMCP-67206FV-15SB  
SMCP-67206FV-30SB  
5962-9317704QTC  
5962-9317702QTC  
5962-9317704VTC  
5962-9317702VTC  
MMDP-67206FV-15-E  
MMDP-67206FV-15  
MMDP-67206FV-30  
SMDP-67206FV-15SB  
SMDP-67206FV-30SB  
5962-9317704QNC  
5962-9317702QNC  
5962-9317704VNC  
5962-9317702VNC  
MM0-67206FV-15-E  
5962-9317704Q9A  
5962-9317704V9A  
25°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
25°C  
Mil.  
SCC B  
SCC B  
QML Q  
QML Q  
QML V  
QML V  
Engineering Samples  
Mil.  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
-55 to +125°C  
25°C  
Mil.  
SCC B  
SCC B  
QML Q  
QML Q  
QML V  
QML V  
Engineering Samples  
QML Q  
-55 to +125°C  
-55 to +125°C  
Die  
Die  
QML V  
Note:  
1. Contact Atmel for availability.  
17  
4143F–AERO–06/02  
Package Drawings  
28-lead Side Braze (300 Mils)  
18  
M67206F  
4143F–AERO–06/02  
Package Drawings  
28-lead Flat Pack (400 Mils)  
19  
M67206F  
4143F–AERO–06/02  
Atmel Headquarters  
Atmel Operations  
Corporate Headquarters  
2325 Orchard Parkway  
San Jose, CA 95131  
TEL 1(408) 441-0311  
FAX 1(408) 487-2600  
Memory  
RF/Automotive  
Theresienstrasse 2  
Postfach 3535  
74025 Heilbronn, Germany  
TEL (49) 71-31-67-0  
FAX (49) 71-31-67-2340  
2325 Orchard Parkway  
San Jose, CA 95131  
TEL 1(408) 441-0311  
FAX 1(408) 436-4314  
Europe  
Microcontrollers  
Atmel Sarl  
2325 Orchard Parkway  
San Jose, CA 95131  
TEL 1(408) 441-0311  
FAX 1(408) 436-4314  
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/xM  

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