93C86-E/P_技术文档

Not recommended for new designs –

Please use 93LC76C or 93LC86C.

93C76/86

8K/16K 5.0V Microwire Serial EEPROM

Features:

Package Types

• Single 5.0V supply

PDIP Package

• Low-power CMOS technology

- 1 mA active current typical

• ORG pin selectable memory configuration

1024 x 8- or 512 x 16-bit organization (93C76)

2048 x 8- or 1024 x 16-bit organization (93C86)

8

1

VCC

PE

CS

7

6

5

2

3

4

CLK

DI

ORG

VSS

• Self-timed erase and write cycles

(including auto-erase)

DO

• Automatic ERAL before WRAL

• Power on/off data protection circuitry

• Industry standard 3-wire serial I/O

• Device status signal during erase/write cycles

• Sequential read function

SOIC Package

8

1

CS

CLK

DI

VCC

PE

ORG

VSS

7

6

5

2

3

4

• 1,000,000 erase/write cycles ensured

• Data retention > 200 years

DO

• 8-pin PDIP/SOIC package

• Temperature ranges supported

- Commercial (C):

- Industrial (I):

- Automotive (E)

0°C to +70°C

-40°C to +85°C

-40°C to +125°C

Block Diagram

VCC VSS

Description:

The Microchip Technology Inc. 93C76/86 are 8K and

16K low voltage serial Electrically Erasable PROMs.

The device memory is configured as x8 or x16 bits

depending on the ORG pin setup. Advanced CMOS

technology makes these devices ideal for low power

nonvolatile memory applications. These devices also

have a Program Enable (PE) pin to allow the user to

write protect the entire contents of the memory array.

The 93C76/86 is available in standard 8-pin PDIP and

8-pin surface mount SOIC packages.

Address

Decoder

Memory

Array

Address

Counter

Data

Register

Output

Buffer

DO

DI

Mode

Decode

Logic

PE

CS

Clock

Generator

CLK

 2004 Microchip Technology Inc.

DS21132E-page 1

93C76/86

1.0

ELECTRICAL CHARACTERISTICS

(†)

Absolute Maximum Ratings

VCC.............................................................................................................................................................................7.0V

All inputs and outputs w.r.t. VSS ........................................................................................................-0.6V to Vcc + 1.0V

Storage temperature ...............................................................................................................................-65°C to +150°C

Ambient temperature with power applied................................................................................................-40°C to +125°C

Soldering temperature of leads (10 seconds) .......................................................................................................+300°C

ESD protection on all pins..........................................................................................................................................4 kV

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

1.1

AC Test Conditions

AC Waveform:

VLO = 2.0V

VHI = Vcc - 0.2V

VHI = 4.0V for

(Note 1)

(Note 2)

Timing Measurement Reference Level

Input

0.5 VCC

Output

Note 1: For VCC ≤ 4.0V

2: For VCC > 4.0V

DS21132E-page 2

 2004 Microchip Technology Inc.

93C76/86

TABLE 1-1:

DC CHARACTERISTICS

Applicable over recommended operating ranges shown below unless otherwise noted:

VCC = +4.5V to +5.5V

DC CHARACTERISTICS Commercial (C): TA = 0°C to -40°C

Industrial

(I): TA = -40°C to +85°C

Automotive

(E): TA = -40°C to +125°C

Parameter

Symbol

Min.

Max.

Units

Conditions

High-level input voltage

Low-level input voltage

Low-level output voltage

VIH1

VIL1

VOL1

VOL2

VOH1

VOH2

ILI

2.0

-0.3

—

VCC +1

0.8

0.4

0.2

—

V

—

V

IOL = 2.1 mA; VCC = 4.5V

IOL =100 µA; VCC = 4.5V

IOH = -400 µA; VCC = 4.5V

IOH = -100 µA; VCC = 4.5V.

VIN = 0.1V to VCC

—

V

High-level output voltage

2.4

V

VCC-0.2

-10

—

V

Input leakage current

Output leakage current

10

µA

pF

ILO

-10

10

VOUT = 0.1V to VCC

Pin capacitance

CINT

—

7

(Note 1)

(all inputs/outputs)

TA = +25°C, FCLK = 1 MHz

Operating current

Standby current

ICC write

ICC read

ICCS

—

3

mA

µA

FCLK = 2 MHz; VCC = 5.5V

1.5

100

CLK = CS = 0V; VCC = 5.5V

DI = PE = VSS

ORG = VSS or VCC

Note 1: This parameter is periodically sampled and not 100% tested.

TABLE 1-2: AC CHARACTERISTICS

Applicable over recommended operating ranges shown below unless otherwise noted:

VCC = +4.5V to +5.5V

AC CHARACTERISTICS Commercial (C): TA = 0°C to -40°C

Industrial

(I): TA = -40°C to +85°C

Automotive

(E): TA = -40°C to +125°C

Parameter

Clock frequency

Symbol

Min.

Max.

Units

Conditions

FCLK

TCKH

TCKL

TCSS

TCSH

TCSL

TDIS

TDIH

TPD

—

300

200

50

2

—

MHz

ns

Vcc ≥ 4.5V

Clock high time

Clock low time

—

ns

Chip select setup time

Chip select hold time

Chip select low time

Data input setup time

Data input hold time

Data output delay time

Data output disable time

Status valid time

—

ns

Relative to CLK

0

—

ns

250

100

—

ns

Relative to CLK

CL = 100 pF

—

ns

—

ns

400

100

500

10

15

30

—

ns

TCZ

—

ns

(Note 1)

T_SV

—

ns

CL = 100 pF

Program cycle time

TWC

TEC

—

ms

Erase/Write mode (Note 2)

ERAL mode

—

TWL

—

WRAL mode

Endurance

1M

cycles 25°C, VCC = 5.0V, Block mode

(Note 3)

Note 1: This parameter is periodically sampled and not 100% tested.

2: Typical program cycle is 4 ms per word.

3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific

application, please consult the Total Endurance^™Model which can be obtained from Microchip’s web site

at www.microchip.com.

 2004 Microchip Technology Inc.

DS21132E-page 3

93C76/86

TABLE 1-3:

INSTRUCTION SET FOR 93C76: ORG=1 (X16 ORGANIZATION)

Instruction SB Opcode

Address

Data In

Data Out

Req. CLK Cycles

READ

EWEN

ERASE

ERAL

WRITE

WRAL

EWDS

1

10

00

11

00

01

00

X A8 A7 A6 A5 A4 A3 A2 A1 A0

1 1 X X X X X X X X

X A8 A7 A6 A5 A4 A3 A2 A1 A0

1 0 X X X X X X X X

X A8 A7 A6 A5 A4 A3 A2 A1 A0

0 1 X X X X X X X X

0 0 X X X X X X X X

—

D15 - D0

High-Z

29

13

29

13

(RDY/BSY)

D15 - D0 (RDY/BSY)

—

High-Z

TABLE 1-4:

INSTRUCTION SET FOR 93C76: ORG=0 (X8 ORGANIZATION)

Req. CLK

Cycles

Instruction SB Opcode

Address

Data In

Data Out

READ

EWEN

ERASE

ERAL

WRITE

WRAL

EWDS

1

10

00

11

00

01

00

X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

1 1 X X X X X X X X X

X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

1 0 X X X X X X X X X

X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

0 1 X X X X X X X X X

0 0 X X X X X X X X X

—

D7 - D0

High-Z

22

14

22

14

(RDY/BSY)

D7 - D0 (RDY/BSY)

—

High-Z

TABLE 1-5:

INSTRUCTION SET FOR 93C86: ORG=1 (X16 ORGANIZATION)

Instruction SB Opcode

Address

Data In

Data Out

Req. CLK Cycles

READ

EWEN

ERASE

ERAL

WRITE

WRAL

EWDS

1

10

00

11

00

01

00

A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

1 1 X X X X X X X X

A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

1 0 X X X X X X X X

A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

0 1 X X X X X X X X

0 0 X X X X X X X X

—

D15 - D0

High-Z

29

13

29

13

(RDY/BSY)

D15 - D0 (RDY/BSY)

—

High-Z

TABLE 1-6:

INSTRUCTION SET FOR 93C86: ORG=0 (X8 ORGANIZATION)

Instruction SB Opcode

Address

Data In

Data Out Req. CLK Cycles

READ

EWEN

ERASE

ERAL

WRITE

WRAL

EWDS

1

10

00

11

00

01

00

A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

1 1 X X X X X X X X X

A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

1 0 X X X X X X X X X

—

D7 - D0

High-Z

22

14

22

14

(RDY/BSY)

A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY)

0 1 X X X X X X X X X

0 0 X X X X X X X X X

D7 - D0 (RDY/BSY)

High-Z

—

DS21132E-page 4

 2004 Microchip Technology Inc.

93C76/86

2.3

Erase/Write Enable and Disable

(EWEN, EWDS)

2.0

PRINCIPLES OF OPERATION

When the ORG pin is connected to VCC, the x16 orga-

nization is selected. When it is connected to ground,

the x8 organization is selected. Instructions, addresses

and write data are clocked into the DI pin on the rising

edge of the clock (CLK). The DO pin is normally held in

a high-Z state except when reading data from the

device, or when checking the Ready/Busy status

during a programming operation. The Ready/Busy

status can be verified during an erase/write operation

by polling the DO pin; DO low indicates that program-

ming is still in progress, while DO high indicates the

device is ready. The DO will enter the high-impedance

state on the falling edge of the CS.

The 93C76/86 powers up in the Erase/Write Disable

(EWDS) state. All programming modes must be

preceded by an Erase/Write Enable (EWEN) instruction.

Once the EWEN instruction is executed, programming

remains enabled until an EWDS instruction is executed

or VCC is removed from the device. To protect against

accidental data disturb, the EWDS instruction can be

used to disable all erase/write functions and should

follow all programming operations. Execution of a READ

instruction is independent of both the EWEN and EWDS

instructions.

2.4

Data Protection

2.1

Start Condition

During power-up, all programming modes of operation

are inhibited until VCC has reached a level greater than

1.4V. During power-down, the source data protection

circuitry acts to inhibit all programming modes when

VCC has fallen below 1.4V.

The Start bit is detected by the device if CS and DI are

both high with respect to the positive edge of CLK for

the first time.

Before a Start condition is detected, CS, CLK and DI

may change in any combination (except to that of a

Start condition), without resulting in any device opera-

tion (Read, Write, Erase, EWEN, EWDS, ERAL and

WRAL). As soon as CS is high, the device is no longer

in the Standby mode.

The EWEN and EWDS commands give additional

protection against accidentally programming during

normal operation.

After power-up, the device is automatically in the

EWDS mode. Therefore, an EWEN instruction must be

performed before any ERASE or WRITE instruction can

be executed.

An instruction following a Start condition will only be

executed if the required amount of opcode, address

and data bits for any particular instruction are clocked

in.

After execution of an instruction (i.e., clock in or out of

the last required address or data bit) CLK and DI

become “don't care” bits until a new Start condition is

detected.

2.2

DI/DO

It is possible to connect the Data In and Data Out pins

together. However, with this configuration it is possible

for a “bus conflict” to occur during the “dummy zero”

that precedes the read operation, if A0 is a logic high

level. Under such a condition the voltage level seen at

Data Out is undefined and will depend upon the relative

impedances of Data Out and the signal source driving

A0. The higher the current sourcing capability of A0,

the higher the voltage at the Data Out pin.

 2004 Microchip Technology Inc.

DS21132E-page 5

93C76/86

3.4

Erase All (ERAL)

3.0

3.1

DEVICE OPERATION

The ERAL instruction will erase the entire memory array

to the logical “1” state. The ERAL cycle is identical to

the erase cycle except for the different opcode. The

ERAL cycle is completely self-timed and commences

on the rising edge of the last address bit (A0). Note that

the Least Significant 8 or 9 address bits are "don’t care"

bits, depending on selection of x16 or x8 mode. Clock-

ing of the CLK pin is not necessary after the device has

entered the self clocking mode. The ERAL instruction is

ensured at Vcc = +4.5V to +5.5V.

Read

The READ instruction outputs the serial data of the

addressed memory location on the DO pin. A dummy

zero bit precedes the 16-bit (x16 organization) or 8-bit

(x8 organization) output string. The output data bits will

toggle on the rising edge of the CLK and are stable

after the specified time delay (TPD). Sequential read is

possible when CS is held high and clock transitions

continue. The memory address pointer will automati-

cally increment and output data sequentially.

The DO pin indicates the Ready/Busy status of the

device if the CS is high. The Ready/Busy status will be

displayed on the DO pin until the next Start bit is

received as long as CS is high. Bringing the CS low will

place the device in Standby mode and cause the DO

pin to enter the high-impedance state. DO at logical “0”

indicates that programming is still in progress. DO at

logical “1” indicates that the entire device has been

erased and is ready for another instruction.

3.2

Erase

The ERASE instruction forces all data bits of the

specified address to the logical “1” state. The self-timed

programming cycle is initiated on the rising edge of

CLK as the last address bit (A0) is clocked in. At this

point, the CLK, CS and DI inputs become “don’t cares”.

The DO pin indicates the Ready/Busy status of the

device if the CS is high. The Ready/Busy status will be

displayed on the DO pin until the next Start bit is

received as long as CS is high. Bringing the CS low will

place the device in Standby mode and cause the DO

pin to enter the high-impedance state. DO at logical “0”

indicates that programming is still in progress. DO at

logical “1” indicates that the register at the specified

address has been erased and the device is ready for

another instruction.

The ERAL cycle takes 15 ms maximum (8 ms typical).

3.5

Write All (WRAL)

The WRAL instruction will write the entire memory array

with the data specified in the command. The WRAL

cycle is completely self-timed and commences on the

rising edge of the last address bit (A0). Note that the

Least Significant 8 or 9 address bits are “don’t cares”,

depending on selection of x16 or x8 mode. Clocking of

the CLK pin is not necessary after the device has

entered the self clocking mode. The WRAL command

does include an automatic ERAL cycle for the device.

Therefore, the WRAL instruction does not require an

ERAL instruction but the chip must be in the EWEN

status. The WRAL instruction is ensured at Vcc = +4.5V

to +5.5V.

The erase cycle takes 3 ms per word (typical).

3.3

Write

The WRITE instruction is followed by 16 bits (or by 8

bits) of data to be written into the specified address.

The self-timed programming cycle is initiated on the

rising edge of CLK as the last data bit (D0) is clocked

in. At this point, the CLK, CS and DI inputs become

“don’t cares”.

The DO pin indicates the Ready/Busy status of the

device if the CS is high. The Ready/Busy status will be

displayed on the DO pin until the next Start bit is

received as long as CS is high. Bringing the CS low will

place the device in Standby mode and cause the DO

pin to enter the high-impedance state. DO at logical “0”

indicates that programming is still in progress. DO at

logical “1” indicates that the entire device has been

written and is ready for another instruction.

The DO pin indicates the Ready/Busy status of the

device if the CS is high. The Ready/Busy status will be

displayed on the DO pin until the next Start bit is

received as long as CS is high. Bringing the CS low will

place the device in Standby mode and cause the DO

pin to enter the high-impedance state. DO at logical “0”

indicates that programming is still in progress. DO at

logical “1” indicates that the register at the specified

address has been written and the device is ready for

another instruction.

The WRAL cycle takes 30 ms maximum (16 ms

typical).

The write cycle takes 3 ms per word (typical).

DS21132E-page 6

 2004 Microchip Technology Inc.

93C76/86

FIGURE 3-1:

SYNCHRONOUS DATA TIMING

VIH

CS

CLK

DI

TCSS

TCKH

TCKL

VIL

VIH

TCSH

TDIH

VIL

TDIS

VIH

VIL

TCZ

TPD

VOH

DO

(Read)

VOL

VOH

VOL

TCZ

TSV

DO

(Program)

Status Valid

The memory automatically cycles to the next register.

FIGURE 3-2:

READ

TCSL

CS

CLK

DI

...

1

0

A_N

A₀

High-impedance

...

0

DO

D_N

D₀

D_N

D₀

FIGURE 3-3:

EWEN

TCSL

CS

CLK

DI

...

1

0

1

x

ORG = VCC, 8 X’S

ORG = VSS, 9 X’S

 2004 Microchip Technology Inc.

DS21132E-page 7

93C76/86

FIGURE 3-4:

EWDS

TCSL

CS

CLK

DI

...

1

0

x

ORG = VCC, 8 X’s

ORG = VSS, 9 X’S

FIGURE 3-5:

WRITE

CS

Standby

CLK

DI

...

1

0

1

A_N

A₀

D_N

D₀

TCZ

High-impedance

Busy

Ready

DO

TWC

FIGURE 3-6:

WRAL

Standby

CS

CLK

DI

...

1

0

1

x

D_N

D₀

TCZ

High-impedance

Busy

Ready

DO

TWL

ORG = VCC, 8 X’s

ORG = VSS, 9 X’s

Ensure at Vcc = +4.5V to +5.5V.

DS21132E-page 8

 2004 Microchip Technology Inc.

93C76/86

FIGURE 3-7:

ERASE

CS

Standby

CLK

DI

...

1

A_N

A₀

TCZ

High-impedance

DO

Busy

Ready

TWC

FIGURE 3-8:

ERAL

Standby

CS

CLK

DI

...

1

0

1

0

x

TCZ

High-impedance

Busy

Ready

DO

TEC

ORG = VCC, 8 X’s

ORG = VSS, 9 X’s

Ensure at VCC = +4.5V to +5.5V.

 2004 Microchip Technology Inc.

DS21132E-page 9

93C76/86

After detection of a Start condition the specified number

of clock cycles (respectively low-to-high transitions of

CLK) must be provided. These clock cycles are

required to clock in all opcode, address, and data bits

before an instruction is executed (see Table 1-3

through Table 1-6 for more details). CLK and DI then

become don't care inputs waiting for a new Start

condition to be detected.

4.0

PIN DESCRIPTIONS

TABLE 4-1:

Name

PIN FUNCTION TABLE

Function

CS

CLK

DI

Chip Select

Serial Data Clock

Serial Data Input

Serial Data Output

Ground

DO

Note:

CS must go low between consecutive

instructions, except when performing a

sequential read (Refer to Section 3.1

“Read” for more detail on sequential

reads).

VSS

ORG

PE

Memory Configuration

Program Enable

Power Supply

VCC

4.3

Data In (DI)

4.1

Chip Select (CS)

Data In is used to clock in a Start bit, opcode, address

and data synchronously with the CLK input.

A high level selects the device. A low level deselects

the device and forces it into Standby mode. However, a

programming cycle which is already initiated will be

completed, regardless of the CS input signal. If CS is

brought low during a program cycle, the device will go

into Standby mode as soon as the programming cycle

is completed.

4.4

Data Out (DO)

Data Out is used in the Read mode to output data

synchronously with the CLK input (TPD after the

positive edge of CLK).

This pin also provides Ready/Busy status information

during erase and write cycles. Ready/Busy status

information is available when CS is high. It will be

displayed until the next Start bit occurs as long as CS

stays high.

CS must be low for 250 ns minimum (TCSL) between

consecutive instructions. If CS is low, the internal

control logic is held in a RESET status.

4.2

Serial Clock (CLK)

The Serial Clock is used to synchronize the communi-

cation between a master device and the 93C76/86.

Opcode, address and data bits are clocked in on the

positive edge of CLK. Data bits are also clocked out on

the positive edge of CLK.

4.5

Organization (ORG)

When ORG is connected to VCC, the x16 memory

organization is selected. When ORG is tied to VSS, the

x8 memory organization is selected. There is an

internal pull-up resistor on the ORG pin that will select

x16 organization when left unconnected.

CLK can be stopped anywhere in the transmission

sequence (at high or low level) and can be continued

anytime with respect to clock high time (TCKH) and

clock low time (TCKL). This gives the controlling master

freedom in preparing opcode, address and data.

4.6

Program Enable (PE)

This pin allows the user to enable or disable the ability

to write data to the memory array. If the PE pin is

floated or tied to VCC, the device can be programmed.

If the PE pin is tied to VSS, programming will be

inhibited. There is an internal pull-up on this device that

enables programming if this pin is left floating.

CLK is a “don't care” if CS is low (device deselected). If

CS is high, but Start condition has not been detected,

any number of clock cycles can be received by the

device without changing its status (i.e., waiting for Start

condition).

CLK cycles are not required during the self-timed write

(i.e., auto erase/write) cycle.

DS21132E-page 10

 2004 Microchip Technology Inc.

93C76/86

5.0

5.1

PACKAGING INFORMATION

Package Marking Information

8-Lead PDIP

Example

XXXXXXXX

XXXXXNNN

YYWW

93C76

017

0410

Example

93C86

8-Lead SOIC (.150”)

XXXXXXXX

XXXXYYWW

/SN0410

017

NNN

 2004 Microchip Technology Inc.

DS21132E-page 11

93C76/86

8-Lead Plastic Dual In-line (P) – 300 mil Body (PDIP)

E1

D

2

n

1

α

E

A2

A

L

c

A1

β

B1

B

p

eB

Units

INCHES*

NOM

8

MILLIMETERS

Dimension Limits

MIN

MAX

MIN

NOM

8

MAX

n

p

Number of Pins

Pitch

.100

2.54

Top to Seating Plane

A

.140

.155

.130

.170

3.56

2.92

3.94

3.30

4.32

Molded Package Thickness

Base to Seating Plane

Shoulder to Shoulder Width

Molded Package Width

Overall Length

A2

A1

E

.115

.015

.300

.240

.360

.125

.008

.045

.014

.310

5

.145

3.68

0.38

7.62

6.10

9.14

3.18

0.20

1.14

0.36

7.87

5

.313

.250

.373

.130

.012

.058

.018

.370

10

.325

.260

.385

.135

.015

.070

.022

.430

15

7.94

6.35

9.46

3.30

0.29

1.46

0.46

9.40

10

8.26

6.60

9.78

3.43

0.38

1.78

0.56

10.92

15

E1

D

Tip to Seating Plane

Lead Thickness

L

c

Upper Lead Width

B1

B

Lower Lead Width

Overall Row Spacing

Mold Draft Angle Top

Mold Draft Angle Bottom

§

eB

α

β

5

10

15

5

10

15

* Controlling Parameter

§ Significant Characteristic

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-001

Drawing No. C04-018

DS21132E-page 12

 2004 Microchip Technology Inc.

93C76/86

8-Lead Plastic Small Outline (SN) – Narrow, 150 mil Body (SOIC)

E

E1

p

D

2

B

n

1

h

α

45°

c

A2

A

φ

β

L

A1

Units

INCHES*

MILLIMETERS

Dimension Limits

MIN

NOM

8

MAX

MIN

NOM

8

MAX

n

p

Number of Pins

Pitch

.050

1.27

Overall Height

A

.053

.061

.056

.007

.237

.154

.193

.015

.025

4

.069

1.35

1.55

1.42

0.18

6.02

3.91

4.90

0.38

0.62

4

1.75

Molded Package Thickness

Standoff

A2

A1

E

.052

.004

.228

.146

.189

.010

.019

0

.061

.010

.244

.157

.197

.020

.030

8

1.32

0.10

5.79

3.71

4.80

0.25

0.48

0

1.55

0.25

6.20

3.99

5.00

0.51

0.76

8

§

Overall Width

Molded Package Width

Overall Length

E1

D

Chamfer Distance

Foot Length

h

L

φ

Foot Angle

c

Lead Thickness

Lead Width

.008

.013

0

.009

.017

12

.010

.020

15

0.20

0.33

0

0.23

0.42

12

0.25

0.51

15

B

α

Mold Draft Angle Top

Mold Draft Angle Bottom

β

0

12

15

0

12

15

* Controlling Parameter

§ Significant Characteristic

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-012

Drawing No. C04-057

 2004 Microchip Technology Inc.

DS21132E-page 13

93C76/86

APPENDIX A: REVISION HISTORY

Revision E

Added note to page 1 header (Not recommended for

new designs).

Added Section 5.0: Package Marking Information.

Added On-line Support page.

Updated document format.

DS21132E-page 14

 2004 Microchip Technology Inc.

93C76/86

ON-LINE SUPPORT

SYSTEMS INFORMATION AND

UPGRADE HOT LINE

Microchip provides on-line support on the Microchip

World Wide Web site.

The Systems Information and Upgrade Line provides

system users a listing of the latest versions of all of

Microchip's development systems software products.

Plus, this line provides information on how customers

can receive the most current upgrade kits. The Hot Line

Numbers are:

The web site is used by Microchip as a means to make

files and information easily available to customers. To

view the site, the user must have access to the Internet

and a web browser, such as Netscape^®or Microsoft^®

Internet Explorer. Files are also available for FTP

download from our FTP site.

1-800-755-2345 for U.S. and most of Canada, and

1-480-792-7302 for the rest of the world.

Connecting to the Microchip Internet

Web Site

042003

The Microchip web site is available at the following

URL:

www.microchip.com

The file transfer site is available by using an FTP

service to connect to:

ftp://ftp.microchip.com

The web site and file transfer site provide a variety of

services. Users may download files for the latest

Development Tools, Data Sheets, Application Notes,

User's Guides, Articles and Sample Programs. A vari-

ety of Microchip specific business information is also

available, including listings of Microchip sales offices,

distributors and factory representatives. Other data

available for consideration is:

• Latest Microchip Press Releases

• Technical Support Section with Frequently Asked

Questions

• Design Tips

• Device Errata

• Job Postings

• Microchip Consultant Program Member Listing

• Links to other useful web sites related to

Microchip Products

• Conferences for products, Development Systems,

technical information and more

• Listing of seminars and events

 2004 Microchip Technology Inc.

DS21132E-page 15

93C76/86

READER RESPONSE

It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-

uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation

can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.

Please list the following information, and use this outline to provide us with your comments about this document.

To:

Technical Publications Manager

Reader Response

Total Pages Sent ________

RE:

From:

Name

Company

Address

City / State / ZIP / Country

Telephone: (_______) _________ - _________

FAX: (______) _________ - _________

Application (optional):

Would you like a reply?

Y

N

93C76/86

DS21132E

Literature Number:

Device:

Questions:

1. What are the best features of this document?

2. How does this document meet your hardware and software development needs?

3. Do you find the organization of this document easy to follow? If not, why?

4. What additions to the document do you think would enhance the structure and subject?

5. What deletions from the document could be made without affecting the overall usefulness?

6. Is there any incorrect or misleading information (what and where)?

7. How would you improve this document?

DS21132E-page 16

 2004 Microchip Technology Inc.

93C76/86

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.

Device

X

/XX

XXX

Temperature

Range

Package

Pattern

Device

93C76/86: Microwire Serial EEPROM

93C76T/86T: Microwire Serial EEPROM (Tape and Reel)

Temperature Range Blank

=

0°C to +70°C

-40°C to +85°C

-40°C to +125°C

I

E

Package

P

SN

=

Plastic DIP (300 mil Body), 8-lead

Plastic SOIC (150 mil Body), 8-lead

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and

recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

 2004 Microchip Technology Inc.

DS21132E-page 17

93C76/86

NOTES:

DS21132E-page 18

 2004 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is intended through suggestion only

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

No representation or warranty is given and no liability is

assumed by Microchip Technology Incorporated with respect

to the accuracy or use of such information, or infringement of

patents or other intellectual property rights arising from such

use or otherwise. Use of Microchip’s products as critical

components in life support systems is not authorized except

with express written approval by Microchip. No licenses are

conveyed, implicitly or otherwise, under any intellectual

property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,

PRO MATE, PowerSmart, rfPIC, and SmartShunt are

registered trademarks of Microchip Technology Incorporated

in the U.S.A. and other countries.

AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL,

SmartSensor and The Embedded Control Solutions Company

are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, dsPICDEM,

dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,

FanSense, FlexROM, fuzzyLAB, In-Circuit Serial

Programming, ICSP, ICEPIC, Migratable Memory, MPASM,

MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,

PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,

PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial,

SmartTel and Total Endurance are trademarks of Microchip

Technology Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 quality system certification for

its worldwide headquarters, design and wafer fabrication facilities in

Chandler and Tempe, Arizona and Mountain View, California in

October 2003. The Company’s quality system processes and

procedures are for its PICmicro^®8-bit MCUs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

 2004 Microchip Technology Inc.

DS21132E-page 19

WORLDWIDE SALES AND SERVICE

China - Beijing

Korea

AMERICAS

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support: 480-792-7627

Web Address: www.microchip.com

Unit 706B

168-1, Youngbo Bldg. 3 Floor

Samsung-Dong, Kangnam-Ku

Seoul, Korea 135-882

Wan Tai Bei Hai Bldg.

No. 6 Chaoyangmen Bei Str.

Beijing, 100027, China

Tel: 86-10-85282100

Fax: 86-10-85282104

Tel: 82-2-554-7200 Fax: 82-2-558-5932 or

82-2-558-5934

Singapore

200 Middle Road

#07-02 Prime Centre

Singapore, 188980

Tel: 65-6334-8870 Fax: 65-6334-8850

China - Chengdu

Rm. 2401-2402, 24th Floor,

Ming Xing Financial Tower

No. 88 TIDU Street

Chengdu 610016, China

Tel: 86-28-86766200

Atlanta

3780 Mansell Road, Suite 130

Alpharetta, GA 30022

Tel: 770-640-0034

Fax: 770-640-0307

Taiwan

Kaohsiung Branch

30F - 1 No. 8

Fax: 86-28-86766599

Boston

Min Chuan 2nd Road

Kaohsiung 806, Taiwan

Tel: 886-7-536-4818

Fax: 886-7-536-4803

China - Fuzhou

Unit 28F, World Trade Plaza

No. 71 Wusi Road

Fuzhou 350001, China

Tel: 86-591-7503506

Fax: 86-591-7503521

2 Lan Drive, Suite 120

Westford, MA 01886

Tel: 978-692-3848

Fax: 978-692-3821

Taiwan

Taiwan Branch

11F-3, No. 207

Tung Hua North Road

Taipei, 105, Taiwan

Tel: 886-2-2717-7175 Fax: 886-2-2545-0139

Chicago

333 Pierce Road, Suite 180

Itasca, IL 60143

Tel: 630-285-0071

Fax: 630-285-0075

China - Hong Kong SAR

Unit 901-6, Tower 2, Metroplaza

223 Hing Fong Road

Kwai Fong, N.T., Hong Kong

Tel: 852-2401-1200

Fax: 852-2401-3431

Dallas

EUROPE

Austria

Durisolstrasse 2

A-4600 Wels

Austria

Tel: 43-7242-2244-399

Fax: 43-7242-2244-393

Denmark

Regus Business Centre

Lautrup hoj 1-3

4570 Westgrove Drive, Suite 160

Addison, TX 75001

Tel: 972-818-7423

Fax: 972-818-2924

China - Shanghai

Room 701, Bldg. B

Far East International Plaza

No. 317 Xian Xia Road

Shanghai, 200051

Detroit

Tri-Atria Office Building

32255 Northwestern Highway, Suite 190

Farmington Hills, MI 48334

Tel: 248-538-2250

Tel: 86-21-6275-5700

Fax: 86-21-6275-5060

China - Shenzhen

Rm. 1812, 18/F, Building A, United Plaza

No. 5022 Binhe Road, Futian District

Shenzhen 518033, China

Tel: 86-755-82901380

Fax: 86-755-8295-1393

China - Shunde

Fax: 248-538-2260

Ballerup DK-2750 Denmark

Tel: 45-4420-9895 Fax: 45-4420-9910

Kokomo

France

2767 S. Albright Road

Kokomo, IN 46902

Tel: 765-864-8360

Fax: 765-864-8387

Parc d’Activite du Moulin de Massy

43 Rue du Saule Trapu

Batiment A - ler Etage

91300 Massy, France

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

Room 401, Hongjian Building, No. 2

Los Angeles

18201 Von Karman, Suite 1090

Irvine, CA 92612

Tel: 949-263-1888

Fax: 949-263-1338

Fengxiangnan Road, Ronggui Town, Shunde

District, Foshan City, Guangdong 528303, China

Tel: 86-757-28395507 Fax: 86-757-28395571

Germany

China - Qingdao

Rm. B505A, Fullhope Plaza,

No. 12 Hong Kong Central Rd.

Qingdao 266071, China

Tel: 86-532-5027355 Fax: 86-532-5027205

Steinheilstrasse 10

D-85737 Ismaning, Germany

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

San Jose

1300 Terra Bella Avenue

Mountain View, CA 94043

Tel: 650-215-1444

Italy

India

Via Quasimodo, 12

20025 Legnano (MI)

Milan, Italy

Divyasree Chambers

1 Floor, Wing A (A3/A4)

No. 11, O’Shaugnessey Road

Bangalore, 560 025, India

Tel: 91-80-22290061 Fax: 91-80-22290062

Japan

Fax: 650-961-0286

Toronto

Tel: 39-0331-742611

Fax: 39-0331-466781

Netherlands

Waegenburghtplein 4

NL-5152 JR, Drunen, Netherlands

Tel: 31-416-690399

6285 Northam Drive, Suite 108

Mississauga, Ontario L4V 1X5, Canada

Tel: 905-673-0699

Fax: 905-673-6509

Benex S-1 6F

3-18-20, Shinyokohama

Kohoku-Ku, Yokohama-shi

Kanagawa, 222-0033, Japan

Tel: 81-45-471- 6166 Fax: 81-45-471-6122

ASIA/PACIFIC

Australia

Suite 22, 41 Rawson Street

Epping 2121, NSW

Australia

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

Fax: 31-416-690340

United Kingdom

505 Eskdale Road

Winnersh Triangle

Wokingham

Berkshire, England RG41 5TU

Tel: 44-118-921-5869

Fax: 44-118-921-5820

05/28/04

DS21132E-page 20

 2004 Microchip Technology Inc.


型号：	93C86-E/P
厂家：	MICROCHIP
描述：	8K/16K 5.0V Microwire Serial EEPROM 8K / 16K 5.0V Microwire串行EEPROM 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件：	总20页 (文件大小：270K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

93C86-E/P [MICROCHIP]

相关型号：

93C86-E/SN

93C86-EP

93C86-ESN

93C86-I/P

93C86-I/SN

93C86-I/SNG

93C86-IP

93C86-ISN

93C86-P

93C86-SN

93C86/P

93C86/SN