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IPT030N12N3 G在额外的击穿电压裕度和低导通电阻 (RDS(on)) 之间达到了出色平衡，是电池供电设备的理想选择。英飞凌 OptiMOS™ 功率 MOSFET 120V 技术 符合 TO-Leadless 封装要求, 针对大电流应用进行了优化。TOLL 封装是高功率密度应用的理想解决方案，与 D2PAK 7 引脚相比，封装尺寸减小了30％，且封装电感更低。
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