AT24C128-10PE-2.7 [MICROCHIP]
EEPROM, 16KX8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, MS-001BA, DIP-8;型号: | AT24C128-10PE-2.7 |
厂家: | MICROCHIP |
描述: | EEPROM, 16KX8, Serial, CMOS, PDIP8, 0.300 INCH, PLASTIC, MS-001BA, DIP-8 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 时钟 双倍数据速率 光电二极管 内存集成电路 |
文件: | 总22页 (文件大小:336K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Features
• Low-voltage and Standard-voltage Operation
– 2.7 (VCC = 2.7V to 5.5V)
– 1.8 (VCC = 1.8V to 3.6V)
• Internally Organized 16,384 x 8 and 32,768 x 8
• Two-wire Serial Interface
• Schmitt Trigger, Filtered Inputs for Noise Suppression
• Bidirectional Data Transfer Protocol
• 1 MHz (5V), 400 kHz (2.7V, 2.5V) and 100 kHz (1.8V) Compatibility
• Write Protect Pin for Hardware and Software Data Protection
• 64-byte Page Write Mode (Partial Page Writes Allowed)
• Self-timed Write Cycle (5 ms Max)
Two-wire Serial
EEPROMs
• High Reliability
– Endurance: One Million Write Cycles
– Data Retention: 40 Years
• Extended Temperature and Lead-free/Halogen-free
Devices Available
• 8-lead JEDEC PDIP, 8-lead JEDEC and EIAJ SOIC, 8-lead MAP, 8-lead TSSOP, 8-lead
SAP and 8-ball dBGA2 Packages
• Die Sales: Wafer Form, Waffle Pack, and Bumped Wafers
128K (16,384 x 8)
256K (32,768 x 8)
Description
AT24C128
AT24C256
The AT24C128/256 provides 131,072/262,144 bits of serial electrically erasable and
programmable read only memory (EEPROM) organized as 16,384/32,768 words of 8
bits each. The device’s cascadable feature allows up to 4 devices to share a common
Two-wire bus. The device is optimized for use in many industrial and commercial appli-
cations where low power and low voltage operation are essential. The devices are
available in space-saving 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ
SOIC, 8-lead MAP (24C128), 8-lead TSSOP, 8-lead SOIC Array Package and 8-ball
dBGA2 packages. In addition, the entire family is available in 2.7V (2.7V to 5.5V) and
1.8V (1.8V to 3.6V) versions.
8-lead TSSOP
8-lead PDIP
Table 1. Pin Configuration
A0
A1
1
2
3
4
8
7
6
5
VCC
WP
A0
A1
1
2
3
4
8
7
6
5
VCC
WP
Pin Name
A0 - A1
SDA
Function
Address Inputs
Serial Data
Serial Clock Input
Write Protect
No Connect
Ground
NC
SCL
SDA
NC
SCL
SDA
GND
GND
SCL
8-lead SOIC
8-lead MAP
WP
VCC
8
7
6
5
1
2
3
4
A0
A0
A1
1
2
3
4
8
7
6
5
VCC
NC
WP
SCL
SDA
A1
WP
NC
GND
NC
SCL
SDA
GND
GND
Bottom View
8-lead SAP
8-ball dBGA2
8
7
6
5
1
2
3
4
A0
VCC
WP
VCC
WP
8
7
6
5
1
2
3
4
A0
A1
A1
NC
GND
SCL
SDA
SCL
SDA
NC
GND
Bottom View
Bottom View
Rev. 0670O–SEEPR–2/05
Absolute Maximum Ratings*
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Operating Temperature..................................–55°C to +125°C
Storage Temperature.....................................–65°C to +150°C
Voltage on Any Pin
with Respect to Ground....................................–1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Figure 1. Block Diagram
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AT24C128/256
0670O–SEEPR–2/05
AT24C128/256
Pin Description
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each
EEPROM device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bidirectional for serial data transfer. This pin is open-
drain driven and may be wire-ORed with any number of other open-drain or open collector
devices.
DEVICE/ADDRESSES (A1, A0): The A1 and A0 pins are device address inputs that are hard-
wired or left not connected for hardware compatibility with other AT24CXX devices. When the
pins are hardwired, as many as four 128K/256K devices may be addressed on a single bus
system (device addressing is discussed in detail under the Device Addressing section). If the
pins are left floating, the A1 and A0 pins will be internally pulled down to GND if the capacitive
coupling to the circuit board VCC plane is <3 pF. If coupling is >3 pF, Atmel recommends con-
necting the address pins to GND.
WRITE PROTECT (WP): The write protect input, when connected to GND, allows normal write
operations. When WP is connected high to VCC, all write operations to the memory are inhib-
ited. If the pin is left floating, the WP pin will be internally pulled down to GND if the capacitive
coupling to the circuit board VCC plane is <3 pF. If coupling is >3 pF, Atmel recommends con-
necting the pin to GND.
Memory
Organization
AT24C128/256, 128K/256K SERIAL EEPROM: The 128K/256K is internally organized as
256/512 pages of 64-bytes each. Random word addressing requires a 14/15-bit data word
address.
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0670O–SEEPR–2/05
Table 2. Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V.
Symbol
CI/O
Test Condition
Max
8
Units
pF
Conditions
VI/O = 0V
VIN = 0V
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, SCL)
CIN
6
pF
Note:
Table 3. DC Characteristics(1)
Applicable over recommended operating range from: TAI = –40°C to +85°C, VCC = +1.8V to +5.5V; TAE= –40°C to +125°C(2),
CC = +2.7V to +5.5V(unless otherwise noted).
1. This parameter is characterized and is not 100% tested.
V
Symbol
Parameter
Test Condition
Min
1.8
2.5
4.5
Typ
Max
3.6
5.5
5.5
2.0
3.0
0.2
2.0
0.5
6.0
Units
V
VCC1
VCC2
VCC3
ICC1
Supply Voltage
Supply Voltage
Supply Voltage
Supply Current
Supply Current
V
V
VCC = 5.0V
VCC = 5.0V
READ at 400 kHz
WRITE at 400 kHz
1.0
2.0
mA
mA
µA
ICC2
VCC = 1.8V
Standby Current
(1.8V option)
ISB1
VIN = VCC or VSS
VCC = 3.6V
VCC = 2.5V
µA
Standby Current
(2.5V option)
ISB2
VIN = VCC or VSS
VCC = 5.5V
Standby Current
(5.0V option)
ISB3
ILI
VCC = 4.5 - 5.5V VIN = VCC or VSS
VIN = VCC or VSS
6.0
3.0
3.0
µA
µA
µA
Input Leakage Current
0.10
0.05
Output Leakage
Current
ILO
VOUT = VCC or VSS
VIL
Input Low Level(1)
Input High Level(1)
Output Low Level
Output Low Level
–0.6
VCC x 0.3
VCC + 0.5
0.4
V
V
V
V
VIH
VCC x 0.7
VOL2
VOL1
VCC = 3.0V
VCC = 1.8V
IOL = 2.1 mA
IOL = 0.15 mA
0.2
Notes: 1. VIL min and VIH max are reference only and are not tested.
2. The AT24C128/256 bearing the process letter “B” on the package (the mark is located in the lower right corner on the top-
side of the package) are approved for operation in the extended temperature range.
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AT24C128/256
0670O–SEEPR–2/05
AT24C128/256
AC Characteristics – Industrial Temperatures
Applicable over recommended operating range from TAI = –40°C to +85°C, VCC = +1.8V to +5.5V, CL = 100 pF (unless oth-
erwise noted). Test conditions are listed in Note 2.
1.8-volt
Max
2.5-volt
Max
5.0-volt
Max
Symbol
fSCL
Parameter
Min
Min
Min
Units
kHz
µs
Clock Frequency, SCL
Clock Pulse Width Low
Clock Pulse Width High
Clock Low to Data Out Valid
100
400
1000
tLOW
4.7
4.0
0.1
1.3
0.6
0.4
0.4
tHIGH
tAA
µs
4.5
0.05
0.9
0.05
0.55
µs
Time the bus must be free before a
new transmission can start(1)
tBUF
4.7
1.3
0.5
µs
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tR
Start Hold Time
4.0
4.7
0
0.6
0.6
0
0.25
0.25
0
µs
µs
µs
ns
µs
ns
µs
ns
ms
Start Set-up Time
Data In Hold Time
Data In Set-up Time
Inputs Rise Time(1)
Inputs Fall Time(1)
Stop Set-up Time
Data Out Hold Time
Write Cycle Time
200
100
100
1.0
0.3
0.3
tF
300
300
100
tSU.STO
tDH
4.7
0.6
50
0.25
50
100
tWR
20 or 5(3)
10 or 5(3)
10 or 5(3)
Write
Cycles
Endurance(1)
25°C, Page Mode
100k or 1,000,000(4)
Notes: 1. This parameter is characterized and is not 100% tested.
2. AC measurement conditions:
RL (connects to VCC): 1.3 kΩ (2.5V, 5V), 10 kΩ (1.8V)
Input pulse voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 50 ns
Input and output timing reference voltages: 0.5 VCC
3. The Write Cycle Time of 5 ms only applies to the AT24C128/256 devices bearing the process letter “B” on the package (the
mark is located in the lower right corner on the top side of the package).
4. The AT24C128/256 bearing the process letter “B” in the package (the mark is located in the lower right corner on the top
side of the package), guarantees 1 million write cycle endurance (1.8 – 3.6V).
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0670O–SEEPR–2/05
AC Characteristics(5) – Extended Temperatures
Applicable over recommended operating range from TAE = –40°C to +125°C, VCC = +2.7V to +5.5V, CL = 100 pF (unless
otherwise noted). Test conditions are listed in Note 2.
2.7-volt
Max
5.0-volt
Max
Symbol
fSCL
Parameter
Min
Min
Units
kHz
µs
Clock Frequency, SCL
Clock Pulse Width Low
Clock Pulse Width High
Clock Low to Data Out Valid
400
1000
tLOW
1.3
0.6
0.4
0.4
tHIGH
tAA
µs
0.05
0.9
0.05
0.55
µs
Time the bus must be free before a new
transmission can start(1)
tBUF
1.3
0.5
µs
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tR
Start Hold Time
0.6
0.6
0
0.25
0.25
0
µs
µs
µs
ns
µs
ns
µs
ns
ms
Start Set-up Time
Data In Hold Time
Data In Set-up Time
Inputs Rise Time(1)
Inputs Fall Time(1)
Stop Set-up Time
Data Out Hold Time
Write Cycle Time
100
100
0.3
0.3
tF
300
100
tSU.STO
tDH
0.6
50
0.25
50
tWR
10 or 5(3)
10 or 5(3)
Write
Cycles
Endurance(1)
25°C, Page Mode
100k or 1,000,000(4)
Notes: 1. This parameter is characterized and is not 100% tested.
2. AC measurement conditions:
RL (connects to VCC): 1.3 kΩ (2.5V, 5V), 10 kΩ (1.8V)
Input pulse voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 50 ns
Input and output timing reference voltages: 0.5 VCC
3. The Write Cycle Time of 5 ms only applies to the AT24C128/256 devices bearing the process letter “B” on the package (the
mark is located in the lower right corner on the top side of the package).
4. The AT24C128/256 bearing the process letter “B” in the package (the mark is located in the lower right corner on the top
side of the package), guarantees 1 million write cycle endurance (1.8 – 3.6V).
5. The AT24C128/256 bearing the process letter “B” on the package (the mark is located in the lower right corner on the top-
side of the package) are approved for operation in the extended temperature range.
6
AT24C128/256
0670O–SEEPR–2/05
AT24C128/256
Device
Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an external
device. Data on the SDA pin may change only during SCL low time periods (see Figure 4 on
page 8). Data changes during SCL high periods will indicate a start or stop condition as
defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition which
must precede any other command (see Figure 5 on page 9).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition. After a
read sequence, the stop command will place the EEPROM in a standby power mode (see Fig-
ure 5 on page 9).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a zero during the ninth clock cycle to acknowl-
edge that it has received each word.
STANDBY MODE: The AT24C128/256 features a low power standby mode which is enabled:
a) upon power-up and b) after the receipt of the STOP bit and the completion of any internal
operations.
MEMORY RESET: After an interruption in protocol, power loss or system reset, any two-wire
part can be reset by following these steps: (a) Clock up to 9 cycles, (b) look for SDA high in
each cycle while SCL is high and then (c) create a start condition as SDA is high.
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0670O–SEEPR–2/05
Figure 2. Bus Timing (SCL: Serial Clock, SDA: Serial Data I/O)
Figure 3. Write Cycle Timing (SCL: Serial Clock, SDA: Serial Data I/O)
SCL
SDA
ACK
8th BIT
WORDn
(1)
wr
t
START
CONDITION
STOP
CONDITION
Note:
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
Figure 4. Data Validity
8
AT24C128/256
0670O–SEEPR–2/05
AT24C128/256
Figure 5. Start and Stop Definition
Figure 6. Output Acknowledge
Device
Addressing
The 128K/256K EEPROM requires an 8-bit device address word following a start condition to
enable the chip for a read or write operation (see Figure 7 on page 11). The device address
word consists of a mandatory one, zero sequence for the first five most significant bits as
shown. This is common to all two-wire EEPROM devices.
The 128K/256K uses the two device address bits A1, A0 to allow as many as four devices on
the same bus. These bits must compare to their corresponding hardwired input pins. The A1
and A0 pins use an internal proprietary circuit that biases them to a logic low condition if the
pins are allowed to float.
The eighth bit of the device address is the read/write operation select bit. A read operation is
initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is not
made, the device will return to a standby state.
DATA SECURITY: The AT24C128/256 has a hardware data protection scheme that allows the
user to write protect the whole memory when the WP pin is at VCC
.
9
0670O–SEEPR–2/05
Write
Operations
BYTE WRITE: A write operation requires two 8-bit data word addresses following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit
data word, the EEPROM will output a zero. The addressing device, such as a microcontroller,
then must terminate the write sequence with a stop condition. At this time the EEPROM enters
an internally-timed write cycle, tWR, to the nonvolatile memory. All inputs are disabled during
this write cycle and the EEPROM will not respond until the write is complete (see Figure 8 on
page 11).
PAGE WRITE: The 128K/256K EEPROM is capable of 64-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a
stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to 63 more data words. The
EEPROM will respond with a zero after each data word received. The microcontroller must ter-
minate the page write sequence with a stop condition (see Figure 9 on page 12).
The data word address lower 6 bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the
following byte is placed at the beginning of the same page. If more than 64 data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten. The address “roll over” during write is from the last byte of the current page to the
first byte of the same page.
ACKNOWLEDGE POLLING: Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond
with a zero, allowing the read or write sequence to continue.
10
AT24C128/256
0670O–SEEPR–2/05
AT24C128/256
Read
Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to one. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll
over” during read is from the last byte of the last memory page, to the first byte of the first
page.
Once the device address with the read/write select bit set to one is clocked in and acknowl-
edged by the EEPROM, the current address data word is serially clocked out. The
microcontroller does not respond with an input zero but does generate a following stop condi-
tion (see Figure 10 on page 12).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition.
The microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a zero but does generate a fol-
lowing stop condition (see Figure 11 on page 12).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-
dom address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory
address limit is reached, the data word address will “roll over” and the sequential read will con-
tinue. The sequential read operation is terminated when the microcontroller does not respond
with a zero but does generate a following stop condition (see Figure 12 on page 12).
Figure 7. Device Address
Figure 8. Byte Write
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0670O–SEEPR–2/05
Figure 9. Page Write
Notes: (* = DON’T CARE bit)
(† = DON’T CARE bit for the 128K)
Figure 10. Current Address Read
Figure 11. Random Read
Notes: (* = DON’T CARE bit)
(† = DON’T CARE bit for the 128K)
Figure 12. Sequential Read
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AT24C128/256
0670O–SEEPR–2/05
AT24C128/256
AT24C128 Ordering Information(1)
Ordering Code
Package
Operation Range
AT24C128-10PI-2.7
AT24C128N-10SI-2.7
AT24C128W-10SI-2.7
AT24C128-10TI-2.7
8P3
8S1
8S2
8A2
Industrial Temperature
(–40°C to 85°C)
AT24C128-10PI-1.8
AT24C128N-10SI-1.8
AT24C128W-10SI-1.8
AT24C128-10TI-1.8
8P3
8S1
8S2
8A2
Industrial Temperature
(–40°C to 85°C)
AT24C128-10PE-2.7
AT24C128N-10SE-2.7
8P3
8S1
Extended Temperature
(–40°C to 125°C)
AT24C128-10PQ-2.7(2)
AT24C128-10TQ-2.7(2)
AT24C128N-10SQ-2.7(2)
8P3
8A2
8S1
Lead-free/Halogen-free/
Extended Temperature
(–40°C to 125°C)
AT24C128-10PU-2.7(2)
AT24C128-10PU-1.8(2)
AT24C128N-10SU-2.7(2)
AT24C128N-10SU-1.8(2)
AT24C128-10TU-2.7(2)
AT24C128-10TU-1.8(2)
AT24C128U2-10UU-2.7(2)
AT24C128U2-10UU-1.8(2)
AT24C128Y1-10YU-2.7(2)
AT24C128Y1-10YU-1.8(2)
AT24C128Y4-10YU-2.7(2)
AT24C128Y4-10YU-1.8(2)
8P3
8P3
8S1
8S1
8A2
Lead-free/Halogen-free/
Industrial Temperature
8A2
8U2-1
8U2-1
8Y1
(–40°C to 85°C)
8Y1
8Y4
8Y4
AT24C128-W2.7-11(3)
AT24C128-W1.8-11(3)
Die Sale
Die Sale
Industrial Temperature
(–40°C to 85°C)
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables.
2. “U” and “Q” designates Green package + RoHS compliant
3. Available in waffle pack and wafer form; order as SL719 for wafer form. Bumped die available upon request. Please contact
Serial EEPROM Marketing
Package Type
8P3
8S1
8S2
8U2-1
8Y1
8Y4
8A2
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8-ball, die Ball Grid Array Package (dBGA2)
8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8-lead, 6.00 mm x 4.90 mm Body, Dual Footprint, Non-leaded, Small Array Package (SAP)
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
Options
–2.7
–1.8
Low-voltage (2.7V to 5.5V)
Low-voltage (1.8V to 3.6V)
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0670O–SEEPR–2/05
AT24C256 Ordering Information(1)
Ordering Code
Package
Operation Range
AT24C256-10PI-2.7
AT24C256N-10SI-2.7
AT24C256W-10SI-2.7
AT24C256-10TI-2.7
8P3
8S1
8S2
8A2
Industrial Temperature
(–40°C to 85°C)
AT24C256-10PI-1.8
AT24C256N-10SI-1.8
AT24C256W-10SI-1.8
AT24C256-10TI-1.8
8P3
8S1
8S2
8A2
Industrial Temperature
(–40°C to 85°C)
AT24C256-10PE-2.7
AT24C256N-10SE-2.7
8P3
8S1
Extended Temperature
(–40°C to 125°C)
AT24C256-10PQ-2.7(2)
AT24C256-10TQ-2.7(2)
AT24C256N-10SQ-2.7(2)
8P3
8A2
8S1
Lead-free/Halogen-free/
Extended Temperature
(–40°C to 125°C)
AT24C256-10PU-2.7(2)
AT24C256-10PU-1.8(2)
AT24C256N-10SU-2.7(2)
AT24C256N-10SU-1.8(2)
AT24C256-10TU-2.7(2)
AT24C256-10TU-1.8(2)
AT24C256U2-10UU-2.7(2)
AT24C256U2-10UU-1.8(2)
AT24C256Y4-10YU-2.7(2)
AT24C256Y4-10YU-1.8(2)
8P3
8P3
8S1
8S1
Lead-free/Halogen-free/
Industrial Temperature
(–40°C to 85°C)
8A2
8A2
8U2-1
8U2-1
8Y4
8Y4
AT24C256-W2.7-11(3)
AT24C256-W1.8-11(3)
Die Sale
Die Sale
Industrial Temperature
(–40°C to 85°C)
Notes: 1. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics tables.
2. “U” and “Q” designates Green Package + RoHS compliant
3. Available in waffle pack and wafer form; order as SL719 for wafer form. Bumped die available upon request. Please contact
Serial EEPROM Marketing
.
Package Type
8P3
8S1
8S2
8U2-1
8Y4
8A2
8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8-lead, 0.200" Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)
8-ball, die Ball Grid Array Package (dBGA2)
8-lead, 6.00 mm x 4.90 mm Body, Dual Footprint, Non-leaded, Small Array Package (SAP)
8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP)
Options
–2.7
–1.8
Low-voltage (2.7V to 5.5V)
Low-voltage (1.8V to 3.6V)
14
AT24C128/256
0670O–SEEPR–2/05
AT24C128/256
Packaging Information
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
MIN
MAX
NOM
NOTE
SYMBOL
D1
A2 A
A
0.210
0.195
0.022
0.070
0.045
0.014
0.400
2
A2
b
0.115
0.014
0.045
0.030
0.008
0.355
0.005
0.300
0.240
0.130
0.018
0.060
0.039
0.010
0.365
5
6
6
b2
b3
c
D
3
3
4
3
b2
L
D1
E
b3
4 PLCS
0.310
0.250
0.325
0.280
b
E1
e
0.100 BSC
0.300 BSC
0.130
Side View
eA
L
4
2
0.115
0.150
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
8P3
B
R
15
0670O–SEEPR–2/05
8S1 – JEDEC SOIC
C
1
E
E1
L
N
∅
Top View
End View
e
B
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.35
0.10
MAX
1.75
0.25
NOM
NOTE
SYMBOL
A1
A
–
–
A1
b
0.31
0.17
4.80
3.81
5.79
–
0.51
0.25
5.00
3.99
6.20
C
D
E1
E
–
–
D
–
–
Side View
e
1.27 BSC
L
0.40
0˚
–
–
1.27
8˚
∅
Note:
These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.
10/7/03
REV.
TITLE
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
8S1
B
R
Small Outline (JEDEC SOIC)
16
AT24C128/256
0670O–SEEPR–2/05
AT24C128/256
8S2 – EIAJ SOIC
C
1
E
E1
L
N
Top View
∅
End View
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.70
0.05
0.35
0.15
5.13
5.18
7.70
0.51
0˚
MAX
2.16
0.25
0.48
0.35
5.35
5.40
8.26
0.85
8˚
NOM
NOTE
SYMBOL
A1
A
A1
b
5
5
C
D
E1
E
D
2, 3
Side View
L
∅
e
1.27 BSC
4
Notes: 1. This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
2. Mismatch of the upper and lower dies and resin burrs are not included.
3. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
4. Determines the true geometric position.
5. Values b and C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/−0.005 mm.
10/7/03
TITLE
REV.
DRAWING NO.
2325 Orchard Parkway
San Jose, CA 95131
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)
8S2
C
R
17
0670O–SEEPR–2/05
8U2-1 – dBGA2
D
A1 BALL PAD CORNER
1.
b
E
A1
A
A2
Top View
A1 BALL PAD CORNER
Side View
2
1
A
B
C
D
e
(e1)
d
(d1)
COMMON DIMENSIONS
(Unit of Measure = mm)
Bottom View
8 Solder Balls
SYMBOL
MAX
1.00
0.25
0.50
0.35
MIN
0.81
0.15
0.40
0.25
NOM
0.91
NOTE
A
A1
A2
b
0.20
0.45
0.30
2
D
2.35 BSC
3.73 BSC
0.75 BSC
0.74 REF
0.75 BSC
0.80 REF
1. This drawing is for general information only.
2. Dimension ‘b’ is measured at the maximum solder ball diameter.
E
e
e1
d
d1
6/24/03
TITLE
REV.
DRAWING NO.
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906
8U2-1, 8-ball, 2.35 x 3.73 mm Body, 0.75 mm pitch,
Small Die Ball Grid Array Package (dBGA2)
R
PO8U2-1
A
18
AT24C128/256
0670O–SEEPR–2/05
AT24C128/256
8Y1 – MAP
PIN 1 IND
EX AREA
A
1
3
4
2
PIN 1 INDEX AREA
E1
D1
D
L
8
6
5
7
b
e
A1
E
Bottom View
End View
Top View
COMMON DIMENSIONS
(Unit of Measure = mm)
A
SYMBOL
MIN
–
MAX
0.90
0.05
5.10
3.20
1.15
1.15
0.35
NOM
–
NOTE
A
A1
D
0.00
4.70
2.80
0.85
0.85
0.25
–
4.90
3.00
1.00
1.00
0.30
0.65 TYP
0.60
Side View
E
D1
E1
b
e
L
0.50
0.70
2/28/03
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package
(MAP) Y1
8Y1
C
R
19
0670O–SEEPR–2/05
AT24C128/256
8Y4 – SAP
PIN 1 INDEX AREA
A
PIN 1 ID
D
E1
L
A1
E
e
b
e1
A
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
–
MAX
0.90
0.05
6.20
5.10
3.15
3.15
0.45
NOM
–
NOTE
A
A1
D
0.00
5.80
4.70
2.85
2.85
0.35
–
6.00
E
4.90
D1
E1
b
3.00
3.00
0.40
e
1.27 TYP
3.81 REF
0.60
e1
L
0.50
0.70
5/24/04
DRAWING NO.
REV.
TITLE
1150 E. Cheyenne Mtn. Blvd.
Colorado Springs, CO 80817
8Y4, 8-lead (6.00 x 4.90 mm Body) SOIC Array Package
(SAP) Y4
8Y4
A
R
20
0670O–SEEPR–2/05
AT24C128/256
8A2 – TSSOP
3
2 1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
COMMON DIMENSIONS
(Unit of Measure = mm)
MIN
MAX
NOM
3.00
NOTE
SYMBOL
D
2.90
3.10
2, 5
A
b
E
6.40 BSC
4.40
E1
A
4.30
–
4.50
1.20
1.05
0.30
3, 5
4
–
A2
b
0.80
0.19
1.00
e
A2
–
D
e
0.65 BSC
0.60
L
0.45
0.75
Side View
L1
1.00 REF
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E1 to be determined at Datum Plane H.
5/30/02
DRAWING NO.
TITLE
REV.
2325 Orchard Parkway
San Jose, CA 95131
8A2, 8-lead, 4.4 mm Body, Plastic
Thin Shrink Small Outline Package (TSSOP)
B
8A2
R
21
0670O–SEEPR–2/05
Atmel Corporation
Atmel Operations
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600
Memory
RF/Automotive
Theresienstrasse 2
Postfach 3535
74025 Heilbronn, Germany
Tel: (49) 71-31-67-0
Fax: (49) 71-31-67-2340
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
Regional Headquarters
Microcontrollers
2325 Orchard Parkway
San Jose, CA 95131, USA
Tel: 1(408) 441-0311
Fax: 1(408) 436-4314
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Europe
Atmel Sarl
Route des Arsenaux 41
Case Postale 80
CH-1705 Fribourg
Switzerland
Tel: (41) 26-426-5555
Fax: (41) 26-426-5500
Fax: 1(719) 540-1759
Biometrics/Imaging/Hi-Rel MPU/
High Speed Converters/RF Datacom
Avenue de Rochepleine
La Chantrerie
BP 70602
44306 Nantes Cedex 3, France
Tel: (33) 2-40-18-18-18
Fax: (33) 2-40-18-19-60
BP 123
38521 Saint-Egreve Cedex, France
Tel: (33) 4-76-58-30-00
Fax: (33) 4-76-58-34-80
Asia
Room 1219
Chinachem Golden Plaza
77 Mody Road Tsimshatsui
East Kowloon
Hong Kong
Tel: (852) 2721-9778
Fax: (852) 2722-1369
ASIC/ASSP/Smart Cards
Zone Industrielle
13106 Rousset Cedex, France
Tel: (33) 4-42-53-60-00
Fax: (33) 4-42-53-60-01
1150 East Cheyenne Mtn. Blvd.
Colorado Springs, CO 80906, USA
Tel: 1(719) 576-3300
Japan
9F, Tonetsu Shinkawa Bldg.
1-24-8 Shinkawa
Chuo-ku, Tokyo 104-0033
Japan
Tel: (81) 3-3523-3551
Fax: (81) 3-3523-7581
Fax: 1(719) 540-1759
Scottish Enterprise Technology Park
Maxwell Building
East Kilbride G75 0QR, Scotland
Tel: (44) 1355-803-000
Fax: (44) 1355-242-743
Literature Requests
www.atmel.com/literature
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Printed on recycled paper.
0670O–SEEPR–2/05
相关型号:
AT24C128-10TQ-2.7
EEPROM, 16KX8, Serial, CMOS, PDSO8, 4.40 MM, GREEN, PLASTIC, MO-153AA, TSSOP-8
ATMEL
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