IRF9521 [MICROCHIP]
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,6A I(D),TO-220AB;
| 型号： | IRF9521 |
| 厂家： | 
MICROCHIP TECHNOLOGY |
| 描述： | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,6A I(D),TO-220AB 局域网 开关 脉冲 晶体管 |
| 文件： | 总2页 (文件大小：147K) |
| 下载： | 下载PDF数据表文档文件 |
IRF9522
P-Channel Enhancement-Mode Vertical DMOS Power FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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105
SUPERTEX
IRF9522
TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
IRF9522
Power Field-Effect Transistor, 5A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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2
SAMSUNG
IRF9523
P-Channel Enhancement-Mode Vertical DMOS Power FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
82
SUPERTEX
IRF9523-006
Power Field-Effect Transistor, 5.9A I(D), 80V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRF9530
P-CHANNEL POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3728
SAMSUNG
IRF9530
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
764
INTERSIL
IRF9530
TRANSISTORSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
1679
IRF
IRF9530
P-CHANNEL POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
1001
SAMSUNG
IRF9530
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
1063
VISHAY
IRF9530
12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
30
ROCHESTER
IRF9530
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
42
SAMSUNG
IRF9530-009PBF
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
4
IRF
IRF9530-010
TRANSISTOR 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose PowerWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
2
VISHAY
IRF9530-018
TRANSISTOR 12 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose PowerWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3
VISHAY
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