MCP111T-240I/MB_技术文档

MCP111/112

Micropower Voltage Detector

Features

Package Types

• Ultra-Low Supply Current: 1.75 µA (Max.)

• Precision Monitoring Options Of:

3-Pin SOT23-3/SC-70

3-Pin SOT-89

V_DD

- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,

4.38V and 4.63V

V_OUT

1

2

• Resets Microcontroller in a Power-Loss Event

• Active-Low V_OUTPin:

V_DD

3

MCP111/112

- MCP111 Active-Low, Open-Drain

- MCP112 Active-Low, Push-Pull

V_SS

1

2

3

V_OUT

V

_DDV_SS

• Available in SOT23-3, TO-92, SC-70 and

SOT-89-3 Packages

3-Pin TO-92

• Temperature Range:

- Extended: -40°C to +125°C

(except MCP1XX-195)

- Industrial: -40°C to +85°C (MCP1XX-195 Only)

V_OUT

V_SS

V_DD

• Pb-Free Devices

Applications

Block Diagram

• Critical Microcontroller and Microprocessor

Power-Monitoring Applications

V

DD

• Computers

• Intelligent Instruments

• Portable Battery-Powered Equipment

Comparator

V

OUT

+

–

Output

Driver

General Description

The MCP111/112 are voltage-detecting devices

designed to keep a microcontroller in reset until the

system voltage has stabilized at the appropriate level

for reliable system operation. These devices also

operate as protection from brown-out conditions when

the system supply voltage drops below the specified

threshold voltage level. Eight different trip voltages are

available.

Band Gap

Reference

V

SS

DEVICE FEATURES

Output

SOT-23/SC70

Package Pin Out

(Pin # 1, 2, 3)

ResetDelay

Device

Comment

(typ.)

Type

Pull-up Resistor

MCP111

MCP112

MCP102

Open-drain

Push-pull

External

No

V_OUT, V_SS, V_DD

RST, V_DD, V_SS

No

120 ms

See MCP102/103/121/131 Data Sheet

(DS20001906)

MCP103

Push-pull

No

120 ms

VSS, RST, V_DD

RST, V_DD, V_SS

See MCP102/103/121/131 Data Sheet

(DS20001906)

MCP121 Open-drain

MCP131 Open-Drain

External

See MCP102/103/121/131 Data Sheet

(DS20001906)

Internal (~95 k)

See MCP102/103/121/131 Data Sheet

(DS20001906)

 2004-2016 Microchip Technology Inc.

DS20001889F-page 1

MCP111/112

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

V_DD...................................................................................7.0V

Input current (V_DD) .......................................................10 mA

Output current (RST) ....................................................10 mA

Rated Rise Time of V_DD.............................................100V/µs

All inputs and outputs (except RST) w.r.t. V_SS

..............................................................-0.6V to (V_DD+ 1.0V)

RST output w.r.t. V_SS.......................................-0.6V to 13.5V

Storage temperature .....................................65°C to + 150°C

Ambient temp. with power applied ...............-40°C to + 125°C

Maximum Junction temp. with power applied ...............150°C

ESD protection on all pins2 kV

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits are specified for V_DD= 1V to 5.5V, R_PU= 100 k (only MCP111),

T_A= -40°C to +125°C.

Parameters

Operating Voltage Range

Symbol

Min.

Typ.

Max.

Units

Conditions

V_DD

I_DD

1.0

—

5.5

V

µA

V

Specified V_DDValue to V_OUTlow

Operating Current

1.0

—

I _RST= 10 µA, V _RST< 0.2V

—

< 1

1.75

1.929

1.948

2.355

2.378

2.670

2.696

2.944

2.973

2.974

3.003

3.126

3.157

4.446

4.490

4.700

4.746

—

V_DDTrip Point

MCP1XX-195

V_TRIP

1.872

1.853

2.285

2.262

2.591

2.564

2.857

2.828

2.886

2.857

3.034

3.003

4.314

4.271

4.561

4.514

—

1.900

2.320

2.630

2.900

2.930

3.080

4.380

4.630

±100

T_A= +25°C (Note 1)

T_A= -40°C to +85°C (Note 2)

T_A= +25°C (Note 1)

Note 2

MCP1XX-240

MCP1XX-270

MCP1XX-290

MCP1XX-300

MCP1XX-315

MCP1XX-450

MCP1XX-475

T_A= +25°C (Note 1)

Note 2

T_A= +25°C (Note 1)

Note 2

T_A= +25°C (Note 1)

Note 2

T_A= +25°C (Note 1)

Note 2

T_A= +25°C (Note 1)

Note 2

T_A= +25°C (Note 1)

Note 2

V_DDTrip Point Tempco

T_TPCO

ppm/°

C

Note 1: Trip point is ±1.5% from typical value.

2: Trip point is ±2.5% from typical value.

3: This specification allows this device to be used in PIC^®microcontroller applications that require the In-Circuit Serial

Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements). This

specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (V_OUT). The total

time that the V_OUTpin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the V_OUT

pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C

to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.

4: This parameter is established by characterization and is not 100% tested.

DS20001889F-page 2

 2004-2016 Microchip Technology Inc.

MCP111/112

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits are specified for V_DD= 1V to 5.5V, R_PU= 100 k (only MCP111),

T_A= -40°C to +125°C.

Parameters

Symbol

Min.

Typ.

Max.

Units

Conditions

T_A= +25°C

Threshold Hysteresis

min. = 1%, max = 6%)

MCP1XX-195

MCP1XX-240

MCP1XX-270

MCP1XX-290

MCP1XX-300

MCP1XX-315

MCP1XX-450

MCP1XX-475

V_HYS

0.019

0.023

0.026

0.029

0.031

0.044

0.046

—

0.114

0.139

0.158

0.174

0.176

0.185

0.263

0.278

0.4

V

V_OUTLow-level Output Voltage

V_OL

V_OH

I_OL= 500 µA, V_DD= V_TRIP(MIN)

V_OUTHigh-level Output Voltage

V_DD– 0.6

—

I_OH= 1 mA, For only MCP112

(push-pull output)

Open-drain High Voltage on Output

V_ODH

—

13.5 ⁽³⁾

V

MCP111 only,

V

_DD= 3.0V, Time voltage >

5.5V applied  100s,

current into pin limited to

2 mA, +25°C operation

recommended

Note 3, Note 4

Open-drain Output Leakage Current

I_OD

—

0.1

—

µA

(MCP111 only)

Note 1: Trip point is ±1.5% from typical value.

2: Trip point is ±2.5% from typical value.

3: This specification allows this device to be used in PIC^®microcontroller applications that require the In-Circuit Serial

Programming™ (ICSP™) feature (see device-specific programming specifications for voltage requirements). This

specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (V_OUT). The total

time that the V_OUTpin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the V_OUT

pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C

to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.

4: This parameter is established by characterization and is not 100% tested.

 2004-2016 Microchip Technology Inc.

DS20001889F-page 3

MCP111/112

V_TRIP

1V

V_DD

t_RPU

t_RPD

V_OH

1V

V_OL

V_OUT

t_RT

FIGURE 1-1:

Timing Diagram.

AC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits are specified for V_DD= 1V to 5.5V, R_PU= 100 k

(only MCP111), T_A= -40°C to +125°C.

Parameters

Symbol Min.

Typ.

Max.

Units

Conditions

V_DDDetect to V_OUTInactive

t_RPU

µs

Figure 1-1 and C_L= 50 pF

(Note 1)

—

90

—

V_DDDetect to V_OUTActive

t_RPD

µs

V_DDramped from V_TRIP(MAX)+

—

130

5

—

250 mV down to V_TRIP(MIN)

250 mV, per Figure 1-1,

C_L= 50 pF (Note 1)

–

V_OUTRise Time After V_OUTActive

t_RT

For V_OUT10% to 90% of final

value per Figure 1-1, C_L= 50 pF

—

(Note 1)

Note 1: These parameters are for design guidance only and are not 100% tested.

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all limits are specified for V_DD= 1V to 5.5V, R_PU= 100 k

(MCP111 only), T_A= -40°C to +125°C.

Parameters

Symbol Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Specified Temperature Range

Maximum Junction Temperature

Storage Temperature Range

Package Thermal Resistances

Thermal Resistance, 3L-SOT23

Thermal Resistance, 3L-SC-70

Thermal Resistance, 3L-TO-92

Thermal Resistance, 3L-SOT-89

T_A

T_J

T_A

-40

—

+85

°C

MCP1XX-195

Except MCP1XX-195

+125

+150

-65

_JA

—

336

340

—

°C/W

131.9

110

DS20001889F-page 4

 2004-2016 Microchip Technology Inc.

MCP111/112

2.0

TYPICAL PERFORMANCE CURVES

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, all limits are specified for V_DD= 1V to 5.5V, R_PU= 100 k (only MCP111;

see Figure 4-1), T_A= -40°C to +125°C.

1.6

1.4

1.2

1

1.6

1.4

1.2

1

MCP111-195

5.5V

5.0V

+125°C

4.0V

+85°C

0.8

0.6

0.4

0.2

0

0.8

0.6

0.4

0.2

0

2.8V

-40°C

2.1V

1.7V

+25°C

1.0V

1.0

2.0

3.0

4.0

5.0

6.0

V_DD(V)

Temperature (°C)

FIGURE 2-1:

I

vs. Temperature

FIGURE 2-4:

I

vs. V (MCP111-195).

DD

(MCP111-195).

1.6

1.2

5.5V

5.0V

MCP112-300

1.4

1.2

1

0.8

0.6

0.4

0.2

0

4.0V

+125°C

2.8V

1.7V

0.8

0.6

0.4

0.2

0

+85°C

-40°C

2.1V

1.0V

+25°C

3.0

1.0

2.0

4.0

5.0

6.0

V_DD(V)

Temperature (°C)

FIGURE 2-5:

I

vs. V (MCP112-300).

FIGURE 2-2:

I

vs. Temperature

DD

(MCP112-300).

1.6

1

MCP112-475

0.9

5.5V

2.1V

1.4

1.2

1

0.8

4.0V

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

5.0V

2.8V

0.8

0.6

0.4

0.2

0

+125°C

+85°C

1.7V

-40°C

1.0V

+25°C

3.0

1.0

2.0

4.0

5.0

6.0

V_DD(V)

Temperature (°C)

FIGURE 2-6:

I

vs. V (MCP112-475).

FIGURE 2-3:

I

vs. Temperature

DD

(MCP112-475).

 2004-2016 Microchip Technology Inc.

DS20001889F-page 5

MCP111/112

Note: Unless otherwise indicated, all limits are specified for V_DD= 1V to 5.5V, R_PU= 100 k (only MCP111;

see Figure 4-1), T_A= -40°C to +125°C.

0.120

MCP111-195

1.950

1.945

1.940

1.935

1.930

1.925

1.920

1.915

1.910

1.905

1.900

1.895

0.050

0.045

0.040

0.035

0.030

0.025

0.020

0.015

0.010

0.005

0.000

V_DD= 1.7V

V_TRIP, V increasing

0.100

0.080

0.060

0.040

0.020

0.000

V_HYS, Hysteresis

+125°C

MCP111-195

max temp is

+85°C

-40°C

V_TRIP, V decreasing

+25°C

-60

-10

40

90

140

0.00

0.25

0.50

I_OL(mA)

0.75

1.00

Temperature (°C)

FIGURE 2-7:

V

and V

vs.

FIGURE 2-10:

V

vs. I

OL OL

TRIP

HYST

Temperature (MCP111-195).

(MCP111-195 @ V = 1.7V).

DD

0.080

MCP112-300

V_DD= 2.7V

3.040

0.100

0.098

0.096

0.094

0.092

0.090

0.088

0.086

0.084

0.082

0.070

V_TRIP, V increasing

3.020

0.060

3.000

2.980

2.960

2.940

2.920

2.900

V_HYS, Hysteresis

+125°C

0.050

0.040

0.030

0.020

0.010

0.000

+85°C

MCP112-300

-40°C

0.75

+25°C

V_TRIP, V decreasing

0.00

0.25

0.50

1.00

-60

-10

40

90

140

I_OL(mA)

Temperature (°C)

FIGURE 2-8:

V

and V

vs.

FIGURE 2-11:

V

vs. I

OL OL

TRIP

HYST

Temperature (MCP112-300).

(MCP112-300 @ V = 2.7V).

DD

0.050

4.800

0.180

0.170

0.160

0.150

0.140

0.130

0.120

0.110

0.100

MCP112-475

V_TRIP, V increasing

4.780

4.760

4.740

4.720

4.700

4.680

4.660

4.640

4.620

4.600

4.580

V

_DD= 4.4V

0.040

0.030

0.020

0.010

0.000

V_HYS, Hysteresis

MCP112-475

+125°C

+85°C

-40°C

0.75

+25°C

V_TRIP, V decreasing

-60

-20

20

60

100

140

0.00

0.25

0.50

1.00

I_OL(mA)

Temperature (°C)

FIGURE 2-9:

V

and V

vs.

FIGURE 2-12:

V

vs. I

OL OL

TRIP

HYST

Temperature (MCP112-475).

(MCP112-475 @ V = 4.4V).

DD

DS20001889F-page 6

 2004-2016 Microchip Technology Inc.

MCP111/112

Note: Unless otherwise indicated, all limits are specified for V_DD= 1V to 5.5V, R_PU= 100 k (only MCP111;

see Figure 4-1), T_A= -40°C to +125°C.

0.120

3.150

3.100

3.050

3.000

2.950

2.900

MCP111-195

V_DD= 1.7 V

I_OL= 1.00 mA

MCP112-300

V_DD= 3.1V

0.100

0.080

0.060

0.040

0.020

0.000

I_OL= 0.75 mA

I_OL= 0.50 mA

-40 °C

+85 °C

+25 °C

I_OL= 0.25 mA

I_OL= 0.00 mA

80

+125 °C

-40

0

40

Temperature (°C)

120

0.00

0.25

0.50

0.75

1.00

I_OL(mA)

FIGURE 2-13:

V

vs. Temperature

FIGURE 2-16:

V

vs. I

OH OH

OL

(MCP111-195 @ V = 1.7V).

(MCP112-300 @ V = 3.1V).

DD

0.080

4.820

4.800

4.780

4.760

4.740

4.720

4.700

4.680

MCP112-475

_DD= 4.8V

MCP112-300

V_DD= 2.7V

I_OL= 1.00 mA

0.070

V

0.060

0.050

0.040

0.030

0.020

0.010

0.000

I_OL= 0.75 mA

I_OL= 0.50 mA

+25 °C

-40 °C

I_OL= 0.25 mA

I_OL= 0.00 mA

+85 °C

+125 °C

-40

0

40

80

120

0.00

0.25

0.50

_OL(mA)

0.75

1.00

Temperature (°C)

I

FIGURE 2-14:

V

vs. Temperature

FIGURE 2-17:

V

vs. I

OH OH

OL

(MCP112-300 @ V = 2.7V).

(MCP112-475 @ V = 4.8V).

DD

0.050

600

I_OL= 1.00 mA

MCP112-475

V_DD= 4.4V

0.040

500

MCP111-195

I_OL= 0.75 mA

I_OL= 0.50 mA

400

300

200

100

0

MCP112-300

MCP112-475

0.030

0.020

0.010

0.000

I_OL= 0.25 mA

I_OL= 0.00 mA

0.001

0.01

0.1

1

10

-40

0

40

80

120

V_TRIP(min) - V_DD

Temperature (°C)

FIGURE 2-15:

V

vs. Temperature

FIGURE 2-18:

Typical Transient Response

OL

(MCP112-475 @ V = 4.4V).

(25 °C).

DD

 2004-2016 Microchip Technology Inc.

DS20001889F-page 7

MCP111/112

Note: Unless otherwise indicated, all limits are specified for V_DD= 1V to 5.5V, R_PU= 100 k (only MCP111;

see Figure 4-1), T_A= -40°C to +125°C.

350

300

250

200

150

100

50

400

350

300

250

200

150

100

50

MCP111-195

V_DDdecreasing from:

5V - 1.7V

V_DDincreasing from:

0V - 2.1V

V_DDdecreasing from:

_TRIP(max)+ 0.25V to V_TRIP(min)- 0.25V

V

V_DDincreasing from:

0V - 2.8V

V_DDincreasing

from: 0V - 4.0V

V_DDdecreasing from:

5V - 0V

V_DDincreasing

from: 0V - 5.5V

0

-40

-15

10

35

60

85

110

-40

-15

10

35

60

85

110

Temperature (°C)

FIGURE 2-19:

t

vs. Temperature

FIGURE 2-22:

t

vs. Temperature

RPD

RPU

(MCP111-195).

140

120

100

80

160

MCP112-300

V_DDdecreasing from:

V_TRIP(max)+ 0.25V to V_TRIP(min)- 0.25V

V_DDincreasing from:

0V - 3.1V

140

120

100

80

V_DDincreasing from:

0V - 3.3V

V_DDdecreasing from:

5V - 2.7V

V_DDincreasing from:

0V - 4.0V

60

40

V_DDdecreasing from:

5V - 0V

20

V_DDincreasing from:

0V - 5.5V

0

-40

-15

10

35

60

85

110

-40

-15

10

35

60

85

110

Temperature (°C)

FIGURE 2-20:

t

vs. Temperature

FIGURE 2-23:

t

vs. Temperature

RPD

RPU

(MCP112-300).

250

200

150

100

50

MCP112-475

V_DDdecreasing from:

5V - 4.4V

V_DDincreasing from:

0V - 4.9V

200

150

100

50

V_DDincreasing from:

0V - 5.0V

V_DDdecreasing from:

V_TRIP(max)+ 0.25V to V_TRIP(min)- 0.25V

V_DDincreasing from:

0V - 5.5V

V_DDdecreasing from:

5V - 0V

0

-40

-15

10

35

60

85

110

-40

-15

10

35

60

85

110

Temperature (°C)

FIGURE 2-21:

t

vs. Temperature

FIGURE 2-24:

t

vs. Temperature

RPD

RPU

(MCP112-475).

DS20001889F-page 8

 2004-2016 Microchip Technology Inc.

MCP111/112

Note: Unless otherwise indicated, all limits are specified for V_DD= 1V to 5.5V, R_PU= 100 k (only MCP111;

see Figure 4-1), T_A= -40°C to +125°C.

0.1500

0.1400

0.1300

0.1200

0.1100

0.1000

0.0900

0.0800

60

55

MCP112-475

MCP111-195

50

45

40

35

30

25

20

V_DDincreasing from:

0V - 2.1V

V_DDincreasing from:

0V - 5.0V

V_DDincreasing from:

0V - 4.9V

V_DDincreasing from:

0V - 5.5V

V_DDincreasing

from: 0V - 4.0V

V_DDincreasing from:

0V - 5.5V

V_DDincreasing from:

0V - 4.8V

0V - 2.8V

-40

-15

10

35

60

85

110

-40

-15

10

35

60

85

110

Temperature (°C)

FIGURE 2-25:

t

vs. Temperature

FIGURE 2-27:

t

vs. Temperature

RT

(MCP111-195).

(MCP112-475).

0.4

1.E-02

10m

V_DDincreasing from:

0V - 3.1V

V_DDincreasing from:

1.E-03

1m

0.35

1.E-04

100µ

0V - 3.3V

0.3

0.25

0.2

1.E-05

10µ

1.E-06

1µ

125°C

25°C

1.E-07

100n

1.E-08

10n

V_DDincreasing from:

0V - 5.5V

1.E-09

0.15

0.1

1n

1.E-10

100p

V_DDincreasing from:

0V - 4.0V

1.E-11

10p

- 40°C

1.E-12

1p

0.05

0

MCP112-300

1.E-13

100f

0

1

2

3

4

5

6

7

8

9

10 11 12 13 14

-40

-15

10

35

60

85

110

Pull-Up Voltage (V)

Temperature (°C)

FIGURE 2-26:

(MCP112-300).

t

vs. Temperature

FIGURE 2-28:

Current vs. Voltage Applied to V

Open-Drain Leakage

RT

OUT

(MCP111-195).

 2004-2016 Microchip Technology Inc.

DS20001889F-page 9

MCP111/112

3.0

PIN DESCRIPTION

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1:

PIN FUNCTION TABLE

Pin Number

Symbol

Function

SOT-23-3

SC-70

SOT-89-3

T0-92

1

V_OUT

Output State

V_DDFalling:

H = V_DD> V_TRIP

L = V_DD< V_TRIP

V_DDRising:

H = V_DD> V_TRIP+ V_HYS

L = V_DD< V_TRIP+ V_HYS

2

3

2

4

3

2

V_SS

V_DD

Ground reference

Positive power supply

—

DS20001889F-page 10

 2004-2016 Microchip Technology Inc.

MCP111/112

4.1

V_TRIPOperation

4.0

APPLICATION INFORMATION

The voltage trip point (V_TRIP) is determined on the falling

edge of V_DD. The actual voltage trip point (V_TRIPAC) will

be between the minimum trip point (V_TRIPMIN) and the

maximum trip point (V_TRIPMAX). There is a hysteresis on

this trip point to remove any “jitter” that would occur on

the V_OUTpin when the device V_DDis at the trip point.

For many of today’s microcontroller applications, care

must be taken to prevent low-power conditions that can

cause many different system problems. The most

common causes is a brown-out condition, where the

system supply drops below the operating level momen-

tarily. The second most common cause is when a slowly

decaying power supply causes the microcontroller to

begin executing instructions without sufficient voltage to

sustain SRAM, thus producing indeterminate results.

Figure 4-1 shows a typical application circuit.

Figure 4-2 shows the state of the V_OUTpin as

determined by the V_DDvoltage. The V_TRIPspecification

is for falling V_DDvoltages. When the V_DDvoltage is

rising, the V_OUTpin will not be driven high until V_DDis at

V_TRIP+ V_HYS

.

V_DD

3

V_DD

PIC^®

Microcontroller

0.1

µF

R_PU

(1)

MCP11X

1

V_OUT

MCLR

(Reset Input)

V_SS

2

GND

Note 1: R_PUmay be required with the MCP111

due to the open-drain output. Resistor

R_PUis not required with the MCP112.

FIGURE 4-1:

Typical Application Circuit.

V_DD

V_TRIPAC+ V_HYSAC

V_TRIPMAX

V_TRIPMIN

V_TRIPAC

1V

V_OUT

< 1 V is outside the

device specifications

FIGURE 4-2:

V

Operation as Determined by the V

and V

.

HYS

OUT

TRIP

Figure 4-3 shows a typical transient duration vs. reset

comparator overdrive for which the MCP111/112 will

not generate a reset pulse. It shows that the farther

below the trip point the transient pulse goes, the

duration of the pulse required to cause a reset gets

shorter. Figure 2-18 shows the transient response

characteristics for the MCP111/112.

4.2

Negative Going V_DDTransients

The minimum pulse width (time) required to cause a

reset may be an important criteria in the implementa-

tion of a Power-on Reset (POR) circuit. This time is

referred to as transient duration, defined as the amount

of time needed for these supervisory devices to

respond to a drop in V_DD. The transient duration time is

dependent on the magnitude of V_TRIP– V_DD. Generally

speaking, the transient duration decreases with

A 0.1 µF bypass capacitor, mounted as close as

possible to the V_DDpin, provides additional transient

immunity (refer to Figure 4-1).

increases in V_TRIP– V_DD

.

 2004-2016 Microchip Technology Inc.

DS20001889F-page 11

MCP111/112

4.3

Effect of Temperature on Time-Out

Period (t_RPU

)

5V

V_TRIP(MAX)

V_TRIP(MIN)

The time-out period (t_RPU) determines how long the

device remains in the reset condition. This is affected

by both V_DDand temperature. The graph shown in

Figures 2-22, 2-23 and 2-24 show the typical response

for different V_DDvalues and temperatures.

V

_TRIP(MIN)- V_DD

t_TRANS

Time (µs)

0V

4.4

Using in PIC^®Microcontroller

ICSP™ Applications (MCP111

only)

FIGURE 4-3:

Example of Typical

Transient Duration Waveform.

Figure 4-4 shows the typical application circuit for using

the MCP111 for voltage supervisory function when the

PIC microcontroller will be programmed via the In-Cir-

cuit Serial Programming™ (ICSP) feature. Additional

information is available in TB087, “Using Voltage

Supervisors with PIC^®Microcontroller Systems which

Implement

In-Circuit

Serial

Programming™”,

DS91087.

Note:

It is recommended that the current into the

RST pin be current limited by a 1 k

resistor.

V_DD/V_PP

0.1 µF

V_DD

R_PU

V_DD

PIC^®

MCU

MCP111

MCLR

(reset input)

(Active-Low)

RST

V_SS

1 k

V_SS

FIGURE 4-4:

for PIC Microcontroller with the ICSP™ feature.

Typical Application Circuit

®

DS20001889F-page 12

 2004-2016 Microchip Technology Inc.

MCP111/112

5.0

5.1

PACKAGING INFORMATION

Package Marking Information

3-Lead TO-92

Example:

Device

Code

XXXXXX

YWWNNN

MCP111

240E

MCP111-240E/TO

MCP111-270E/TO

MCP111-290E/TO

MCP111-300E/TO

MCP111-315E/TO

MCP111-450E/TO

MCP111-475E/TO

MCP111-195I/TO

240E

270E

290E

300E

315E

450E

475E

195I

TO^

e3

^

626256

Example:

MP25

3-Lead SOT-23

Device

Code

MCP111T-195I/TT

MCP111T-240ETT

MPNN

MQNN

MCP111T-270E/TT MGNN

MCP111T-290E/TT

MCP111T-300E/TT

NHNN

MJNN

XXNN

MCP111T-315E/TT MKNN

MCP111T-450E/TT MLNN

MCP111T-475E/TT MMNN

MCP112T-195I/TT

MCP112T-240ETT

MRNN

MSNN

MCP112T-270E/TT MANN

MCP112T-290E/TT MBNN

MCP112T-300E/TT MCNN

MCP112T-315E/TT MDNN

MCP112T-450E/TT MENN

MCP112T-475E/TT MFNN

Legend: XX...X Customer-specific information

Y

Year code (last digit of calendar year)

WW

NNN

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

e

3

Pb-free JEDEC designator for Matte Tin (Sn)

This package is Pb-free. The Pb-free JEDEC designator (

can be found on the outer packaging for this package.

*

)

e

3

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

 2004-2016 Microchip Technology Inc.

DS20001889F-page 13

MCP111/112

Package Marking Information (Continued)

3-Lead SC-70

Example:

EP25

Device

MCP111T-195I/LB

Code

EPNN

MCP111T-240E/LB EQNN

MCP111T-270E/LB EGNN

MCP111T-290E/LB EHNN

MCP111T-300E/LB

EJNN

MCP111T-315E/LB EKNN

MCP111T-450E/LB ELNN

MCP111T-475E/LB EMNN

MCP112T-195I/LB

ERNN

MCP112T-240E/LB ESNN

MCP112T-270E/LB EANN

MCP112T-290E/LB EBNN

MCP112T-300E/LB ECNN

MCP112T-315E/LB EDNN

MCP112T-450E/LB EENN

MCP112T-475E/LB EFNN

3-Lead SOT-89

Example:

Device

Code

MCP111T-195I/MB

MCP111T-240EMB

MCP111T-270E/MB

MCP111T-290E/MB

MCP111T-300E/MB

MCP111T-315E/MB

MCP111T-450E/MB

MCP111T-475E/MB

MCP112T-195I/MB

MCP112T-240EMB

MCP112T-270E/MB

MCP112T-290E/MB

MCP112T-300E/MB

MCP112T-315E/MB

MCP112T-450E/MB

MCP112T-475E/MB

MP

MQ

MG

NH

MJ

MP1626

256

NNN

MK

ML

MM

MR

MS

MA

MB

MC

MD

ME

MF

DS20001889F-page 14

 2004-2016 Microchip Technology Inc.

MCP111/112

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 2004-2016 Microchip Technology Inc.

DS20001889F-page 15

MCP111/112

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DS20001889F-page 16

 2004-2016 Microchip Technology Inc.

MCP111/112

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

 2004-2016 Microchip Technology Inc.

DS20001889F-page 17

MCP111/112

3-Lead Plastic Small Outline Transistor (LB) [SC70]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

D

A

e

B

E

2

1

E1

2X

0.15 C

2X

N

3X TIPS

0.30 C

0.15 C

3X b

0.10

C A B

TOP VIEW

c

A2

A

C

SEATING

PLANE

A1

L

SIDE VIEW

END VIEW

Microchip Technology Drawing C04-060C Sheet 1 of 2

DS20001889F-page 18

 2004-2016 Microchip Technology Inc.

MCP111/112

3-Lead Plastic Small Outline Transistor (LB) [SC70]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

Units

MILLIMETERS

Dimension Limits

MIN

NOM

MAX

Number of Pins

Pitch

N

e

3

0.65 BSC

Overall Height

Standoff

Molded Package Thickness

Overall Length

Exposed Pad Length

Overall Width

Exposed Pad Width

Terminal Width

A

A1

A2

D

D2

E

E1

b

L

c

0.80

0.00

0.80

-

1.10

0.10

1.00

-

2.00 BSC

2.60

2.10 BSC

1.25 BSC

-

2.50

2.70

0.15

0.10

0.20

0.40

0.46

0.26

Terminal Length

Lead Thickness

0.20

-

Notes:

1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or

protrusions shall not exceed 0.15mm per side.

2. Dimensioning and tolerancing per ASME Y14.5M

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

REF: Reference Dimension, usually without tolerance, for information purposes only.

Microchip Technology Drawing C04-060C Sheet 2 of 2

 2004-2016 Microchip Technology Inc.

DS20001889F-page 19

MCP111/112

3-Lead Plastic Small Outline Transistor (LB) [SC70]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

E

2

1

SILK SCREEN

C

G

Y

3

X

RECOMMENDED LAND PATTERN

Units

Dimension Limits

MILLIMETERS

NOM

0.65 BSC

2.20

MIN

1.25

MAX

Contact Pitch

E

C

X

Y

G

Contact Pad Spacing

Contact Pad Width

Contact Pad Length

Distance Between Pads

0.50

0.85

Notes:

1. Dimensioning and tolerancing per ASME Y14.5M

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Microchip Technology Drawing No. C04-2060B

DS20001889F-page 20

 2004-2016 Microchip Technology Inc.

MCP111/112

3-Lead Plastic Small Outline Transistor (MB) - [SOT-89]

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 2004-2016 Microchip Technology Inc.

DS20001889F-page 21

MCP111/112

3-Lead Plastic Small Outline Transistor (MB) - [SOT-89]

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DS20001889F-page 22

 2004-2016 Microchip Technology Inc.

MCP111/112

3-Lead Plastic Small Outline Transistor (MB) - [SOT-89]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

X1

X2

Y1

Y3

Y4

Y2

Y

G

X

SILK SCREEN

C

RECOMMENDED LAND PATTERN

Units

Dimension Limits

MILLIMETERS

NOM

MIN

MAX

C

1.50 (BSC)

0.900

X (3 PLACES)

X1

1.733

X2 (2 PLACES)

0.416

G (2 PLACES)

0.600

Y (2 PLACES)

1.300

Y1

Y2

Y3

Y4

3.125

1.475

0.825

1.000

Notes:

1. Dimensioning and tolerancing per ASME Y14.5M

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Microchip Technology Drawing C04-2029C

 2004-2016 Microchip Technology Inc.

DS20001889F-page 23

MCP111/112

5.2

Product Tape and Reel Specifications

Top

Cover

Tape

A₀

W

B₀

P

K₀

FIGURE 5-1:

Embossed Carrier Dimensions (8, 12, 16 and 24 mm tape only).

CARRIER TAPE/CAVITY DIMENSIONS

Carrier

Dimensions

Cavity

Dimensions

Output

Quantity

Units

Reel

Diameter in

mm

Case

Outline

Package

Type

W

P

A0

mm

B0

mm

K0

mm

TT

LB

SOT-23B

SC-70

3L

8

4

3.15

2.4

2.77

2.4

1.22

1.19

3000

180

User Direction of Feed

Device

Marking

W

PIN 1

P

Standard Reel Component Orientation

FIGURE 5-2:

3-Lead SOT-23/SC70 Device Tape and Reel Specifications.

DS20001889F-page 24

 2004-2016 Microchip Technology Inc.

MCP111/112

User Direction of Feed

P

Device

Marking

MARK

FACE

MARK

FACE

MARK

FACE

Seal

Tape

Back

Tape

W

Note:

Bent leads are for Tape and Reel only.

FIGURE 5-3:

TO-92 Devices.

User Direction of Feed

W, Width

of Carrier

Tape

Pin 1

P, Pitch

Reverse Reel Component Orientation

Standard Reel Component Orientation

FIGURE 5-4:

SOT-89 Devices.

 2004-2016 Microchip Technology Inc.

DS20001889F-page 25

MCP111/112

NOTES:

DS20001889F-page 26

 2004-2016 Microchip Technology Inc.

MCP111/112

APPENDIX A: REVISION HISTORY

Revision F (July 2016)

The following is the list of modifications:

1. Updated Table 3-1.

2. Updated Section 5.0 “Packaging informa-

tion”.

3. Minor typographical corrections.

Revision E (January 2013)

• Added a note to each package outline drawing.

Revision D (June 2005)

1. Added

SOT-89-3

package

information

throughout.

Revision C (March 2005)

The following is the list of modifications:

1. Added Section 4.4 “Using in PIC® Microcon-

troller ICSP™ Applications (MCP111 only)”

on using the MCP111 in PIC microcontroller

ICSP applications.

2. Added V_ODHspecifications in Section 1.0

“Electrical

Characteristics”

(for

ICSP

applications).

3. Added Figure 2-28.

4. Added devices features table to page 1.

5. Updated SC-70 package markings and added

Pb-free marking information to Section 5.0

“Packaging information”.

6. Added Appendix A: “Revision History”.

Revision B (August 2004)

1. Corrected package marking information in

Section 5.0 “Packaging information”.

Revision A (May 2004)

• Original release of this document.

 2004-2016 Microchip Technology Inc.

DS20001889F-page 27

MCP111/112

NOTES:

DS20001889F-page 28

 2004-2016 Microchip Technology Inc.

MCP111/112

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Examples:

PART NO.

Device

X

XXX

X

XX

a)

MCP111T-195I/TT: Tape and Reel,

Temperature Package

Range

Tape/Reel

Option

Monitoring

Options

1.95V option, open-drain,

-40°C to +85°C,

SOT-23B package.

b)

MCP111T-315E/LB: Tape and Reel,

3.15V option, open-drain,

-40°C to +125°C,

SC-70-3 package.

Device:

MCP111: MicroPower Voltage Detector, open-drain

MCP111T: MicroPower Voltage Detector, open-drain

(Tape and Reel)

c)

d)

MCP111-300E/TO: 3.00V option, open-drain,

-40°C to +125°C,

TO-92-3 package.

MCP111-315E/MB: 3.15V option, open-drain,

-40°C to +125°C,

MCP112: MicroPower Voltage Detector, push-pull

MCP112T: MicroPower Voltage Detector, push-pull

(Tape and Reel)

Monitoring Options:

195 = 1.90V

240 = 2.32V

270 = 2.63V

290 = 2.90V

300 = 2.93V

315 = 3.08V

450 = 4.38V

475 = 4.63V

SOT-89-3 package.

a)

b)

MCP112T-290E/TT: Tape and Reel,

2.90V option, push-pull, -

40°C to +125°C,

SOT-23B-3 package.

MCP112T-475E/LB: Tape and Reel,

4.75V option, push-pull,

-40°C to +125°C,

SC-70-3 package.

MCP112-450E/TO: 4.5V option, push-pull,

-40°C to +125°C,

TO-92-3 package.

MCP112-315E/MB: 3.15V option, push-pull,

-40°C to +125°C,

Temperature Range:

Package:

I

E

=

-40°C to +85°C (MCP11X-195 only)

-40°C to +125°C (Except MCP11X-195 only)

c)

d)

LB

MB

TO

TT

=

SC-70, 3-lead

SOT-89, 3-lead

TO-92, 3-lead

SOT-23B, 3-lead

SOT-89-3 package.

 2004-2016 Microchip Technology Inc.

DS20001889F-page 29

MCP111/112

NOTES:

DS20001889F-page 30

 2004-2016 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights unless otherwise stated.

Trademarks

The Microchip name and logo, the Microchip logo, AnyRate,

dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,

KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,

MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,

RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O

are registered trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

ClockWorks, The Embedded Control Solutions Company,

ETHERSYNCH, Hyper Speed Control, HyperLight Load,

IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are

registered trademarks of Microchip Technology Incorporated

in the U.S.A.

Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,

BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,

dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,

EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip

Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,

motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,

MPLINK, MultiTRAK, NetDetach, Omniscient Code

Generation, PICDEM, PICDEM.net, PICkit, PICtail,

PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,

Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total

Endurance, TSHARC, USBCheck, VariSense, ViewSpan,

WiperLock, Wireless DNA, and ZENA are trademarks of

Microchip Technology Incorporated in the U.S.A. and other

countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

Microchip received ISO/TS-16949:2009 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC^®MCUs and dsPIC^®DSCs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

Silicon Storage Technology is a registered trademark of

Microchip Technology Inc. in other countries.

GestIC is a registered trademarks of Microchip Technology

Germany II GmbH & Co. KG, a subsidiary of Microchip

Technology Inc., in other countries.

All other trademarks mentioned herein are property of their

respective companies.

QUALITYꢀMANAGEMENTꢀꢀSYSTEMꢀ

CERTIFIEDꢀBYꢀDNVꢀ

ISBN: 978-1-5224-0860-4

== ISO/TSꢀ16949ꢀ==ꢀ

 2004-2016 Microchip Technology Inc.

DS20001889F-page 31

Worldwide Sales and Service

AMERICAS

ASIA/PACIFIC

EUROPE

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://www.microchip.com/

support

Asia Pacific Office

China - Xiamen

Tel: 86-592-2388138

Fax: 86-592-2388130

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

Suites 3707-14, 37th Floor

Tower 6, The Gateway

Harbour City, Kowloon

China - Zhuhai

Tel: 86-756-3210040

Fax: 86-756-3210049

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

Hong Kong

Tel: 852-2943-5100

Fax: 852-2401-3431

India - Bangalore

Tel: 91-80-3090-4444

Fax: 91-80-3090-4123

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

Web Address:

www.microchip.com

India - New Delhi

Tel: 91-11-4160-8631

Fax: 91-11-4160-8632

Germany - Dusseldorf

Tel: 49-2129-3766400

Atlanta

Duluth, GA

Tel: 678-957-9614

Fax: 678-957-1455

China - Beijing

Tel: 86-10-8569-7000

Fax: 86-10-8528-2104

Germany - Karlsruhe

Tel: 49-721-625370

India - Pune

Tel: 91-20-3019-1500

China - Chengdu

Tel: 86-28-8665-5511

Fax: 86-28-8665-7889

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Austin, TX

Tel: 512-257-3370

Japan - Osaka

Tel: 81-6-6152-7160

Fax: 81-6-6152-9310

Boston

China - Chongqing

Tel: 86-23-8980-9588

Fax: 86-23-8980-9500

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Japan - Tokyo

Tel: 81-3-6880- 3770

Fax: 81-3-6880-3771

China - Dongguan

Tel: 86-769-8702-9880

Italy - Venice

Tel: 39-049-7625286

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Korea - Daegu

Tel: 82-53-744-4301

Fax: 82-53-744-4302

China - Guangzhou

Tel: 86-20-8755-8029

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

China - Hangzhou

Tel: 86-571-8792-8115

Fax: 86-571-8792-8116

Korea - Seoul

Cleveland

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

Poland - Warsaw

Tel: 48-22-3325737

Independence, OH

Tel: 216-447-0464

Fax: 216-447-0643

China - Hong Kong SAR

Tel: 852-2943-5100

Fax: 852-2401-3431

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

Malaysia - Kuala Lumpur

Tel: 60-3-6201-9857

Fax: 60-3-6201-9859

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

China - Nanjing

Tel: 86-25-8473-2460

Fax: 86-25-8473-2470

Sweden - Stockholm

Tel: 46-8-5090-4654

Malaysia - Penang

Tel: 60-4-227-8870

Fax: 60-4-227-4068

Detroit

Novi, MI

Tel: 248-848-4000

UK - Wokingham

Tel: 44-118-921-5800

Fax: 44-118-921-5820

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

Houston, TX

Tel: 281-894-5983

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

Indianapolis

Noblesville, IN

Tel: 317-773-8323

Fax: 317-773-5453

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

Taiwan - Hsin Chu

Tel: 886-3-5778-366

Fax: 886-3-5770-955

Los Angeles

China - Shenzhen

Tel: 86-755-8864-2200

Fax: 86-755-8203-1760

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

Taiwan - Kaohsiung

Tel: 886-7-213-7828

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Taiwan - Taipei

Tel: 886-2-2508-8600

Fax: 886-2-2508-0102

New York, NY

Tel: 631-435-6000

San Jose, CA

Tel: 408-735-9110

China - Xian

Tel: 86-29-8833-7252

Fax: 86-29-8833-7256

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

Canada - Toronto

Tel: 905-695-1980

Fax: 905-695-2078

06/23/16

DS20001889F-page 32

 2004-2016 Microchip Technology Inc.


型号：	MCP111T-240I/MB
厂家：	MICROCHIP
描述：	Micropower Voltage Detector
文件：	总32页 (文件大小：396K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCP111T-240I/MB [MICROCHIP]

相关型号：

MCP111T-240I/TO

MCP111T-240I/TT

MCP111T-240LB

MCP111T-270E

MCP111T-270E/LB

MCP111T-270E/MB

MCP111T-270E/TO

MCP111T-270E/TT

MCP111T-270E/TTG

MCP111T-270E/TTVAO

MCP111T-270I/LB

MCP111T-270I/MB