MCP1403T-E/OA [MICROCHIP]
4.5 A BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, LEAD FREE, PLASTIC, MS-012, SOIC-8;
| 型号： | MCP1403T-E/OA |
| 厂家： | 
MICROCHIP |
| 描述： | 4.5 A BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, LEAD FREE, PLASTIC, MS-012, SOIC-8 驱动 光电二极管 |
| 文件： | 总22页 (文件大小：886K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCP1403/4/5
4.5A Dual High-Speed Power MOSFET Drivers
General Description
Features
• High Peak Output Current: 4.5A (typ.)
The MCP1403/4/5 are a family of dual-inverting, dual-
non-inverting, or complimentary output drivers. They
can delivery high peak currents of 4.5A typically into
capacitive loads. These devices also feature low shoot-
through current, matched rise/fall times and
propagation delays.
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2200 pF in 15 ns
The MCP1403/4/5 drivers operate from a 4.5V to 18V
single power supply and can easily charge and
discharge 2200 pF gate capacitance in under 15 ns
(typ). They provide low enough impedances in both the
on and off states to ensure the MOSFETs intended
state will not be affected, even by large transients. The
input to the MCP1403/4/5 may be driven directly from
either TTL or CMOS (3V to 18V).
- 5600 pF in 34 ns
• Short Delay Times: 40 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 1.0 mA (typ.)
- With Logic ‘0’ Input – 150 µA (typ.)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
The MCP1403/4/5 dual-output 4.5A driver family is
offered in both surface-mount and pin-through-hole
packages with a -40oC to +125oC temperature rating.
The low thermal resistance of the thermally enhanced
DFN package allows for greater power dissipation
capability for driving heavier capacitive or resistive
loads.
• Logic Input Will Withstand Negative Swing
Up To 5V
• Packages: 8-Pin SOIC, PDIP, 8-Pin 6x5 DFN,
and 16-Pin SOIC
Applications
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin. All
terminals are fully protect against Electrostatic
Discharge (ESD) up to 4 kV.
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
Package Types
MCP1404
MCP1404
MCP1403
8-Pin
MCP1405
MCP1403
MCP1405
PDIP/SOIC
16-Pin SOIC
NC
1
2
3
4
5
6
7
8
16
15
14
13
NC
NC
NC
8
7
6
5
NC
IN A
NC
GND
GND
NC
1
NC
NC
NC
OUT A
OUT A
VDD
OUT A
OUT A
VDD
OUT A
OUT A
VDD
IN A 2
GND 3
IN B 4
OUT A
VDD
OUT B
OUT A
VDD
OUT B
OUT A
VDD
OUT B
VDD
VDD
VDD
12
11
10
OUT B
OUT B
NC
OUT B
OUT B
NC
OUT B
OUT B
NC
MCP1404
MCP1403 MCP1405
IN B
NC
8-Pin DFN(2)
9
1
8
7
6
5
NC
IN A
GND
IN B
NC
NC
NC
Note 1: Duplicate pins must both be connected for
2
3
4
proper operation.
OUT A
VDD
OUT A
VDD
OUT A
VDD
2: Exposed pad of the DFN package is electrically
isolated.
OUT B
OUT B
OUT B
© 2006 Microchip Technology Inc.
DS22022A-page 1
MCP1403/4/5
Functional Block Diagram (1)
VDD
Inverting
730 µA
300 mV
Output
Non-inverting
Input
Effective
Input C = 20 pF
(Each Input)
4.7V
MCP1403 Dual Inverting
MCP1404 Dual Non-inverting
MCP1405 Inverting / Non-inverting
GND
Note 1: Unused inputs should be grounded.
DS22022A-page 2
© 2006 Microchip Technology Inc.
MCP1403/4/5
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ...............................(VDD + 0.3V) to (GND – 5V)
Input Current (VIN>VDD)................................................50 mA
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
VIH
VIL
IIN
2.4
—
–1
-5
1.5
1.3
—
—
0.8
V
V
1
µA 0V ≤ VIN ≤ VDD
Input Voltage
VIN
—
VDD+0.3
V
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
VOH
VOL
ROH
ROL
IPK
VDD – 0.025
—
—
—
0.025
3.0
3.5
—
V
V
Ω
Ω
A
A
DC Test
—
—
—
—
—
DC Test
2.2
2.8
4.5
>1.5
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
VDD = 18V (Note 2)
Duty cycle ≤ 2%, t ≤ 300 µsec.
Latch-Up Protection With-
stand Reverse Current
IREV
—
Switching Time (Note 1)
Rise Time
tR
tF
—
—
15
18
28
28
ns
ns
Figure 4-1, Figure 4-2
CL = 2200 pF
Fall Time
Figure 4-1, Figure 4-2
CL = 2200 pF
Delay Time
tD1
tD2
—
—
40
40
48
48
ns
ns
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
Delay Time
Power Supply
Supply Voltage
Power Supply Current
VDD
IS
4.5
—
—
1.0
18.0
2.0
V
mA VIN = 3V (Both Inputs)
mA VIN = 0V (Both Inputs)
IS
—
0.15
0.25
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
© 2006 Microchip Technology Inc.
DS22022A-page 3
MCP1403/4/5
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage VIH
2.4
—
—
—
—
—
0.8
+10
V
V
Logic ‘0’, Low Input Voltage
Input Current
VIL
IIN
–10
µA
0V ≤ VIN ≤ VDD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
VOH VDD – 0.025
—
—
—
0.025
6.0
V
V
Ω
Ω
DC TEST
VOL
ROH
ROL
—
—
—
DC TEST
3.1
3.7
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
7
tR
tF
—
—
25
25
40
40
ns
ns
Figure 4-1, Figure 4-2
CL = 2200 pF
Fall Time
Figure 4-1, Figure 4-2
CL = 2200 pF
Delay Time
tD1
tD2
—
—
50
50
65
65
ns
ns
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
Delay Time
Power Supply
Power Supply Current
IS
—
—
2.0
0.2
3.0
0.3
mA
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
TA
TJ
TA
–40
—
—
—
—
+125
+150
+150
°C
°C
°C
–65
θJA
—
33.2
—
°C/W Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 16L-SOIC
θJA
θJA
θJA
—
—
—
125
155
155
—
—
—
°C/W
°C/W
°C/W 4-Layer JC51-7 Standard
Board, Natural Convection
DS22022A-page 4
© 2006 Microchip Technology Inc.
MCP1403/4/5
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
100
90
80
70
60
50
40
30
20
10
100
90
80
70
60
50
40
30
20
10
6800 pF
6800 pF
4700 pF
4700 pF
2200 pF
2200 pF
1800 pF
6
1800 pF
6
4
8
10
12
14
16
18
4
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-1:
Rise Time vs. Supply
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
Voltage.
80
70
60
50
40
30
20
100
90
80
12V
70
12V
60
5V
50
5V
40
30
18V
20
18V
10
10
1000
10000
1000
10000
Capacitive Load (pF)
Capacitive Load (pF)
FIGURE 2-2:
Rise Time vs. Capacitive
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
Load.
24
160
135
110
85
CLOAD = 1800 pF
VDD = 12V
CLOAD = 1800 pF
22
20
18
16
14
12
tFALL
tD1
60
tRISE
tD2
3
35
2
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
4
5
6
7
8
9
10
Input Amplitude (V)
FIGURE 2-3:
Rise and Fall Times vs.
FIGURE 2-6:
Propagation Delay vs. Input
Temperature.
Amplitude.
© 2006 Microchip Technology Inc.
DS22022A-page 5
MCP1403/4/5
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
100
90
80
70
60
50
40
30
0.5
0.4
0.3
0.2
0.1
0
CLOAD = 1800 pF
tD1
Both Inputs = 1
tD2
Both Inputs = 0
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-7:
Propagation Delay Time vs.
FIGURE 2-10:
Quiescent Current vs.
Supply Voltage.
Temperature.
7
6
70
VIN = 5V (MCP1404)
CLOAD = 1800 pF
65
60
55
50
45
40
35
30
TJ = +150oC
VIN = 0V (MCP1403)
tD2
5
4
3
2
1
tD1
TJ = +25oC
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-8:
Propagation Delay Time vs.
FIGURE 2-11:
Output Resistance (Output
Temperature.
High) vs. Supply Voltage.
8
0.5
0.4
VIN = 0V (MCP1404)
IN = 5V (MCP1403)
V
TJ = +150oC
7
6
5
4
3
2
0.3
0.2
0.1
0
Both Inputs = 1
TJ = +25oC
Both Inputs = 0
4
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-9:
Quiescent Current vs.
FIGURE 2-12:
Output Resistance (Output
Supply Voltage.
Low) vs. Temperature.
DS22022A-page 6
© 2006 Microchip Technology Inc.
MCP1403/4/5
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
100
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
VDD = 18V
VDD = 18V
6,800 pF
4,700 pF
650 kHz
400 kHz
50 kHz
100 kHz
2,200 pF
200 kHz
100 pF
10
100
1000
100
1000
10000
Capacitive Load (pF)
Frequency (kHz)
FIGURE 2-13:
Supply Current vs.
FIGURE 2-16:
Supply Current vs.
Capacitive Load.
Frequency.
140
120
VDD = 12V
VDD = 12V
4,700 pF
2 MHz
120
100
80
60
40
20
0
1 MHz
100
80
6,800 pF
100 kHz
2,200 pF
100 pF
60
500 kHz
40
200 kHz
20
0
100
1000
Capacitive Load (pF)
10000
10
100
1000
10000
Frequency (kHz)
FIGURE 2-14:
Supply Current vs.
FIGURE 2-17:
Supply Current vs.
Capacitive Load.
Frequency.
140
120
VDD = 6V
VDD = 6V
3.5 MHz
6,800 pF
4,700 pF
120
100
80
100
80
2 MHz
200 kHz
60
1 MHz
500 kHz
60
40
20
0
2,200 pF
40
20
100 pF
0
100
1000
Capacitive Load (pF)
10000
10
100
1000
10000
Frequency (kHz)
FIGURE 2-15:
Supply Current vs.
FIGURE 2-18:
Supply Current vs.
Capacitive Load.
Frequency.
© 2006 Microchip Technology Inc.
DS22022A-page 7
MCP1403/4/5
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
10-6
-7
10
-8
10
-9
10
4
6
8
10
12
14
16
18
Supply Voltage (V)
Note:
The values on this graph represent the
loss seen by both drivers in a package
during one complete cycle. For a sin-
gle driver, divide the stated value by 2.
For a single transition of a single driver
divide the stated value by 4.
FIGURE 2-19:
Crossover Energy vs.
Supply Voltage.
DS22022A-page 8
© 2006 Microchip Technology Inc.
MCP1403/4/5
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
(1)
TABLE 3-1:
PIN FUNCTION TABLE
8-Pin
PDIP
SOIC
8-Pin
DFN
16-Pin
SOIC
Symbol
Description
1
2
1
2
1
2
NC
IN A
NC
No Connection
Control Input for Output A
No Connection
Ground
—
3
—
3
3
4
GND
GND
NC
—
—
4
—
—
4
5
Ground
6
No Connection
Control Input for Output B
No Connection
No Connection
Output B
7
IN B
NC
—
—
5
—
—
5
8
9
NC
10
11
12
13
14
15
16
OUT B
OUT B
VDD
—
6
—
6
Output B
Supply Input
—
7
—
7
VDD
Supply Input
OUT A
OUT A
NC
Output A
—
8
—
8
Output A
No Connection
Exposed Metal Pad
—
PAD
NC
Note 1: Duplicate pins must be connected for proper operation.
3.1
Supply Input (VDD
)
3.4
Outputs A and B
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local capacitor. This bypass
capacitor provides a localized low-impedance path for
the peak currents that are to be provided to the load.
Outputs A and B are CMOS push-pull output that is
capable of sourcing and sinking 4.5A of peak current
(VDD = 18V). The low output impedance ensures the
gate of the external MOSFET will stay in the intended
state even during large transients. These output also
has a reverse current latch-up rating of 1.5A.
3.2
Control Inputs A and B
3.5
Exposed Metal Pad
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
hysteresis between the high and low input levels,
allowing them to be driven from slow rising and falling
signals, and to provide noise immunity.
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other cop-
per plane on a printed circuit board to aid in heat
removal from the package.
3.3
Ground (GND)
Ground is the device return pin. The ground pin should
have a low impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
© 2006 Microchip Technology Inc.
DS22022A-page 9
MCP1403/4/5
4.0
4.1
APPLICATION INFORMATION
General Information
VDD = 18V
1 µF
MOSFET drivers are high-speed, high current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching power
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A MOS-
FET driver like the MCP1403/4/5 family can be used to
provide additional source/sink current capability.
0.1 µF
Ceramic
Input
Input
Output
CL = 2200 pF
4.2
MOSFET Driver Timing
MCP1404
(1/2 MCP1405)
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the driv-
ers rise time (tR), fall time (tF), and propagation delays
(tD1 and tD2). The MCP1403/4/5 family of drivers can
typically charge and discharge a 2200 pF load capaci-
tance in 15 ns along with a typical matched propaga-
tion delay of 40 ns. Figure 4-1 and Figure 4-2 show the
test circuit and timing waveform used to verify the
MCP1403/4/5 timing.
+5V
90%
Input
10%
0V
18V
90%
90%
tD1
tD2
tF
tR
Output
0V
VDD = 18V
10%
10%
0.1 µF
1 µF
Ceramic
FIGURE 4-2:
Non-Inverting Driver Timing
Waveform.
Input
Input
Output
CL = 2200 pF
4.3
Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, 2.5A are needed
to charge a 2200 pF load with 18V in 16 ns.
MCP1403
(1/2 MCP1405)
To operate the MOSFET driver over a wide frequency
range with low supply impedance a ceramic and low
ESR film capacitor are recommended to be placed in
parallel between the driver VDD and GND. A 1.0 µF low
ESR film capacitor and a 0.1 µF ceramic capacitor
+5V
90%
Input
0V
10%
tD1
90%
10%
tD2
tF
tR
placed between V
and GND pins should be used.
DD
18V
90%
These capacitors should be placed close to the driver
to minimized circuit board parasitics and provide a local
source for the required current.
Output
10%
0V
4.4
PCB Layout Considerations
FIGURE 4-1:
Inverting Driver Timing
Waveform.
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
robustness of design. PCB trace loop area and
inductance should be minimized by the use of ground
planes or trace under MOSFET gate drive signals,
separate analog and power grounds, and local driver
decoupling.
DS22022A-page 10
© 2006 Microchip Technology Inc.
MCP1403/4/5
Placing a ground plane beneath the MCP1403/4/5 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
4.5.2
QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1403/4/5 devices have a quiescent current
draw when both inputs are high of 1.0 mA (typ) and
0.15 mA (typ) when both inputs are low. The quiescent
power dissipation is:
4.5
Power Dissipation
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
PQ = (IQH × D + IQL × (1 – D)) × VDD
Where:
PT = PL + PQ + PCC
IQH = Quiescent current in the high state
D = Duty cycle
Where:
PT = Total power dissipation
PL = Load power dissipation
PQ = Quiescent power dissipation
PCC = Operating power dissipation
IQL = Quiescent current in the low state
VDD = MOSFET driver supply voltage
4.5.3
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describes as:
4.5.1
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
PCC = CC × f × VDD
2
Where:
PL = f × CT × VDD
CC = Cross-conduction constant (A*sec)
f = Switching frequency
Where:
f = Switching frequency
CT = Total load capacitance
VDD = MOSFET driver supply voltage
VDD = MOSFET driver supply voltage
© 2006 Microchip Technology Inc.
DS22022A-page 11
MCP1403/4/5
5.0
5.1
PACKAGING INFORMATION
Package Marking Information (Not to Scale)
8-Lead DFN
Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
MCP1403
e
3
E/MF^
0648
256
8-Lead PDIP (300 mil)
Example:
MCP1403
XXXXXXXX
XXXXXNNN
e
3
E/P^^256
0648
YYWW
8-Lead SOIC (150 mil)
Example:
MCP1405E
XXXXXXXX
XXXXYYWW
SN^3 0648
e
NNN
256
16-Lead SOIC (300 mil)
Example:
XXXXXXXXXXX
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
MCP1405
e
3
E/SO
0648256
Legend: XX...X Customer-specific information
Y
YY
WW
NNN
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
DS22022A-page 12
© 2006 Microchip Technology Inc.
MCP1403/4/5
8-Lead Plastic Dual-Flat, No-Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
e
D1
L
b
N
N
K
E
E2
E1
EXPOSED
PAD
2
1
NOTE 1
1
2
NOTE 1
D2
BOTTOM VIEW
TOP VIEW
ϕ
A2
A
A1
A3
NOTE 2
Units
MILLIMETERS
NOM
Dimension Limits
MAX
MIN
Number of Pins
Pitch
N
e
8
1.27 BSC
0.85
—
—
Overall Height
A
1.10
0.80
0.05
Molded Package Thickness
Standoff
A2
A1
A3
D
0.65
0.00
0.01
Base Thickness
0.20 REF
4.92 BSC
4.67 BSC
4.00
Overall Length
Molded Package Length
Exposed Pad Length
Overall Width
D1
D2
E
3.85
4.15
5.99 BSC
5.74 BSC
2.31
Molded Package Width
Exposed Pad Width
Contact Width
E1
E2
b
2.16
0.35
0.50
0.20
—
2.46
0.47
0.75
—
0.40
Contact Length
§
L
0.60
Contact-to-Exposed Pad
Mold Draft Angle Top
§
K
—
ϕ
12°
—
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. § Significant Characteristic
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing No. C04–113, 09/20/06
© 2006 Microchip Technology Inc.
DS22022A-page 13
MCP1403/4/5
8-Lead Plastic Dual In-line (PA) – 300 mil Body (PDIP)
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
B
p
eB
Units
INCHES*
NOM
8
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
8
MAX
n
p
Number of Pins
Pitch
.100
2.54
Top to Seating Plane
A
.140
.155
.130
.170
3.56
2.92
3.94
3.30
4.32
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
A2
A1
E
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
.145
3.68
0.38
7.62
6.10
9.14
3.18
0.20
1.14
0.36
7.87
5
.313
.250
.373
.130
.012
.058
.018
.370
10
.325
.260
.385
.135
.015
.070
.022
.430
15
7.94
6.35
9.46
3.30
0.29
1.46
0.46
9.40
10
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
E1
D
Tip to Seating Plane
Lead Thickness
L
c
Upper Lead Width
B1
B
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
§
eB
α
β
5
10
15
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
DS22022A-page 14
© 2006 Microchip Technology Inc.
MCP1403/4/5
8-Lead Plastic Small Outline (OA) – Narrow, 150 mil Body (SOIC)
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E
E1
p
D
2
B
n
1
h
α
45°
c
A2
A
φ
β
L
A1
Units
INCHES*
MILLIMETERS
Dimension Limits
MIN
NOM
8
MAX
MIN
NOM
8
MAX
n
p
Number of Pins
Pitch
.050
1.27
Overall Height
A
.053
.061
.056
.007
.237
.154
.193
.015
.025
4
.069
1.35
1.32
1.55
1.42
0.18
6.02
3.91
4.90
0.38
0.62
4
1.75
Molded Package Thickness
Standoff
A2
A1
E
.052
.004
.228
.146
.189
.010
.019
0
.061
.010
.244
.157
.197
.020
.030
8
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
§
0.10
5.79
3.71
4.80
0.25
0.48
0
Overall Width
Molded Package Width
Overall Length
E1
D
Chamfer Distance
Foot Length
h
L
φ
Foot Angle
c
Lead Thickness
Lead Width
.008
.013
0
.009
.017
12
.010
.020
15
0.20
0.33
0
0.23
0.42
12
0.25
0.51
15
B
α
β
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
0
12
15
0
12
15
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
© 2006 Microchip Technology Inc.
DS22022A-page 15
MCP1403/4/5
16-Lead Plastic Small Outline (SO) – Wide, 300 mil Body (SOIC)
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E
p
E1
D
2
n
1
B
h
α
45°
c
A2
A
φ
β
L
A1
Units
INCHES*
MILLIMETERS
Dimension Limits
MIN
NOM
16
MAX
MIN
NOM
16
MAX
n
p
Number of Pins
Pitch
.050
.099
1.27
Overall Height
A
.093
.104
2.36
2.24
2.50
2.31
0.20
10.34
7.49
10.30
0.50
0.84
4
2.64
Molded Package Thickness
A2
A1
E
.088
.004
.394
.291
.398
.010
.016
0
.091
.008
.407
.295
.406
.020
.033
4
.094
.012
.420
.299
.413
.029
.050
8
2.39
0.30
10.67
7.59
10.49
0.74
1.27
8
Standoff
§
0.10
10.01
7.39
10.10
0.25
0.41
0
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
E1
D
h
L
φ
Foot Angle
c
Lead Thickness
Lead Width
.009
.014
0
.011
.017
12
.013
.020
15
0.23
0.36
0
0.28
0.42
12
0.33
0.51
15
B
α
β
Mold Draft Angle Top
Mold Draft Angle Bottom
0
12
15
0
12
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-013
Drawing No. C04-102
DS22022A-page 16
© 2006 Microchip Technology Inc.
MCP1403/4/5
APPENDIX A: REVISION HISTORY
Revision A (December 2006)
• Original Release of this Document.
© 2006 Microchip Technology Inc.
DS22022A-page 17
MCP1403/4/5
NOTES:
DS22022A-page 18
© 2006 Microchip Technology Inc.
MCP1403/4/5
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Examples:
PART NO.
Device
X
XX
a) MCP1403-E/OA: 4.5A Dual Inverting
MOSFET Driver,
Temperature Package
Range
8LD SOIC package.
b)
c)
d)
MCP1403-E/PA: 4.5A Dual Inverting
MOSFET Driver,
Device:
MCP1403: 4.5A Dual MOSFET Driver, Inverting
MCP1403T: 4.5A Dual MOSFET Driver, Inverting
(Tape and Reel)
MCP1404: 4.5A Dual MOSFET Driver, Non-Inverting
MCP1404T: 4.5A Dual MOSFET Driver, Non-Inverting
(Tape and Reel)
MCP1405: 4.5A Dual MOSFET Driver, Complementary
MCP1405T: 4.5A Dual MOSFET Driver, Complementary
(Tape and Reel)
8LD PDIP package.
MCP1403-E/MF: 4.5A Dual Inverting
MOSFET Driver,
8LD DFN package.
MCP1403-E/SO: 4.5A Dual Inverting
MOSFET Driver,
16LD SOIC package.
a) MCP1404T-E/OA: Tape and Reel.
4.5A Dual Non-Inverting,
Temperature Range:
Package: *
E
=
-40°C to +125°C
MOSFET Driver,
8LD SOIC package,
MF
OA
PA
=
=
=
=
Dual, Flat, No-Lead (6x5 mm Body), 8-lead
Plastic SOIC (150 mil Body), 8-Lead
Plastic DIP, (300 mil body), 8-lead
Plastic SOIC (Wide), 16-Lead
b)
MCP1404-E/PA: 4.5A Dual Non-Inverting,
MOSFET Driver,
SO
8LD PDIP package.
* All package offerings are Pb Free (Lead Free)
a) MCP1405-E/OA: 4.5A Dual Complementary,
MOSFET Driver,
8LD SOIC package.
b)
c)
MCP1405-E/PA: 4.5A Dual Complementary,
MOSFET Driver,
8LD PDIP package.
MCP1405T-E/SO: Tape and Reel,
4.5A Dual Complementary
MOSFET Driver,
16LD SOIC package.
© 2006 Microchip Technology Inc.
DS22022A-page 19
MCP1403/4/5
NOTES:
DS22022A-page 20
© 2006 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,
PRO MATE, PowerSmart, rfPIC, and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active
Thermistor, Mindi, MiWi, MPASM, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2006, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its PIC®
8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs,
microperipherals, nonvolatile memory and analog products. In addition,
Microchip’s quality system for the design and manufacture of
development systems is ISO 9001:2000 certified.
© 2006 Microchip Technology Inc.
DS22022A-page 21
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Habour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-4182-8400
Fax: 91-80-4182-8422
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Atlanta
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Alpharetta, GA
Tel: 770-640-0034
Fax: 770-640-0307
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Korea - Gumi
Tel: 82-54-473-4301
Fax: 82-54-473-4302
Boston
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Seoul
China - Fuzhou
Tel: 86-591-8750-3506
Fax: 86-591-8750-3521
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Penang
Tel: 60-4-646-8870
Fax: 60-4-646-5086
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Shunde
Tel: 86-757-2839-5507
Fax: 86-757-2839-5571
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
China - Xian
Tel: 86-29-8833-7250
Fax: 86-29-8833-7256
10/19/06
DS22022A-page 22
© 2006 Microchip Technology Inc.
相关型号：
MCP1404-E/PA
4.5 A BUF OR INV BASED MOSFET DRIVER, PDIP8, 0.300 INCH, LEAD FREE, PLASTIC, MS-001, DIP-8
MICROCHIP
MCP1404T-E/OA
4.5 A BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, LEAD FREE, PLASTIC, MS-012, SOIC-8
MICROCHIP
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