MCP1407T-E/SNVAO [MICROCHIP]
Buffer/Inverter Based MOSFET Driver, 6A, PDSO8;
| 型号： | MCP1407T-E/SNVAO |
| 厂家： | 
MICROCHIP |
| 描述： | Buffer/Inverter Based MOSFET Driver, 6A, PDSO8 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总30页 (文件大小：943K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCP1406/07
6A High-Speed Power MOSFET Drivers
Features
General Description
• High Peak Output Current: 6.0A (typical)
The MCP1406/07 devices are
a
family of
buffers/MOSFET drivers that feature a single-output
with 6A peak drive current capability, low shoot-through
current, matched rise/fall times and propagation delay
times. These devices are pin-compatible and are
improved versions of the TC4420/TC4429 MOSFET
drivers.
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2500 pF in 20 ns
The MCP1406/07 MOSFET drivers can easily charge
and discharge 2500 pF gate capacitance in under
20 ns, provide low enough impedances (in both the ON
and OFF states) to ensure that intended state of the
MOSFETs will not be affected, even by large transients.
The input to the MCP1406/07 may be driven directly
from either TTL or CMOS (3V to 18V).
- 6800 pF in 40 ns
• Short Delay Times: 40 ns (typical)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typical)
- With Logic ‘0’ Input – 35 µA (typical)
These devices are highly latch-up resistant under any
conditions that fall within their power and voltage
ratings. They are not subject to damage when up to 5V
of noise spiking (of either polarity) occurs on the ground
pin. All terminals are fully protected against
electrostatic discharge (ESD), up to 2.0 kV (HBM) and
400V (MM).
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing up to 5V
• Pin compatible with the TC4420/TC4429 devices
• Space-saving 8-Pin SOIC, PDIP and
8-Pin 6 x 5 mm DFN Packages
The MCP1406/07 single-output 6A MOSFET driver
family is offered in both surface-mount and
pin-through-hole packages with a -40°C to +125°C
temperature rating, making it useful in any wide
temperature range application.
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
2006-2016 Microchip Technology Inc.
DS20002019C-page 1
MCP1406/07
Package Types
8-Pin PDIP/SOIC
MCP1406
MCP1407
VDD
VDD
INPUT
NC
VDD
VDD
INPUT
NC
1
2
3
8
7
6
1
2
3
8
7
6
OUT
OUT
GND
OUT
OUT
GND
4
5
4
5
GND
GND
8-Pin 6x5 DFN-S(2)
MCP1407
MCP1406
VDD
VDD
8
1
VDD
VDD
8
1
INPUT
2
3
4
7 OUT
EP
9
INPUT
2
3
4
7 OUT
EP
9
6
NC
OUT
6
NC
OUT
GND
5 GND
GND
5 GND
5-Pin TO-220
MCP1406
MCP1407
Tab is common to VDD
1
2
3
4
5
1
2 3 4 5
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated; see Table 3-1.
DS20002019C-page 2
2006-2016 Microchip Technology Inc.
MCP1406/07
Functional Block Diagram(1)
VDD
Inverting
130 µA
300 mV
Output
Output
Non-Inverting
Input
Effective
Input C = 25 pF
4.7V
MCP1406 Inverting
MCP1407 Non-Inverting
GND
Note 1: Unused inputs should be grounded.
2006-2016 Microchip Technology Inc.
DS20002019C-page 3
MCP1406/07
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ..................................(VDD +0.3V) to (GND -5V)
Input Current (VIN > VDD)..............................................50 mA
Package Power Dissipation (TA <= +70°C)
DFN-S .......................................................................2.5W
PDIP..........................................................................1.2W
SOIC .......................................................................0.83W
TO-220......................................................................3.9W
ESD Protection on all Pins................2 kV (HBM), 400V (MM)
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5VVDD18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
VIH
VIL
IIN
2.4
—
1.8
1.3
—
—
0.8
V
V
–10
-5
10
µA 0VVINVDD
Input Voltage
VIN
—
VDD + 0.3
V
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
VOH
VOL
ROH
ROL
IPK
VDD – 0.025
—
—
—
0.025
2.8
V
V
A
A
A
DC Test
—
—
—
—
1.3
—
DC Test
2.1
1.5
6
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
VDD 18V (Note 1)
Note 1, Note 2
2.5
—
IDC
Latch-Up Protection Withstand
Reverse Current
IREV
1.5
—
Duty cycle2%, t 300 µs
Switching Time (Note 3)
Rise Time
tR
tF
—
—
20
20
30
30
ns
ns
Figure 4-1, Figure 4-2
CL = 2500 pF
Fall Time
Figure 4-1, Figure 4-2
CL = 2500 pF
Delay Time
tD1
tD2
—
—
40
40
55
55
ns
ns
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
Delay Time
Power Supply
Supply Voltage
Power Supply Current
VDD
IS
4.5
—
—
130
35
18.0
250
100
V
µA VIN = 3V
µA VIN = 0V
IS
—
Note 1: Tested during characterization, not production tested.
2: Valid for AT (TO-220) and MF (DFN-S) packages only. TA = +25°C
3: Switching times ensured by design.
DS20002019C-page 4
2006-2016 Microchip Technology Inc.
MCP1406/07
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Logic ‘1’, High Input Voltage VIH
2.4
—
—
—
—
—
—
0.8
V
V
Logic ‘0’, Low Input Voltage
Input Current
VIL
IIN
-10
-5
+10
µA
V
0VVINVDD
Input Voltage
VIN
VDD+0.3
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
VOH
VOL
ROH
ROL
VDD – 0.025
—
—
—
0.025
5.0
V
V
DC TEST
—
—
—
DC TEST
3.0
2.3
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
5.0
tR
tF
—
—
25
25
40
40
ns
ns
Figure 4-1, Figure 4-2
CL = 2500 pF
Fall Time
Figure 4-1, Figure 4-2
CL = 2500 pF
Delay Time
tD1
tD2
—
—
50
50
65
65
ns
ns
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
Delay Time
Power Supply
Supply Voltage
Power Supply Current
VDD
IS
4.5
—
—
200
50
18.0
500
150
V
µA
VIN = 3V
VIN = 0V
—
Note 1: Switching times ensured by design.
2006-2016 Microchip Technology Inc.
DS20002019C-page 5
MCP1406/07
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters
Temperature Ranges
Sym.
Min.
Typ.
Max.
Units Conditions
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
TA
TJ
TA
-40
—
—
—
—
+125
+150
+150
°C
°C
°C
-65
Junction-to-Ambient Thermal Resistance,
8-L 6x5 DFN
JA
—
31.8
—
°C/W Note 1
Junction-to-Ambient Thermal Resistance, 8-L PDIP
Junction-to-Ambient Thermal Resistance, 8-L SOIC
JA
JA
JA
—
—
—
65.2
96.3
20.1
—
—
—
°C/W Note 1
°C/W Note 1
°C/W Note 1
Junction-to-Ambient Thermal Resistance,
5-L TO-220
Junction-to-Case (Bottom) Thermal Resistance,
5-L TO-220
JC(BOT)
JT
3.2
0.2
—
—
—
—
—
—
—
—
—
°C/W Note 2
°C/W Note 1
°C/W Note 1
°C/W Note 1
°C/W Note 1
°C/W Note 1
°C/W Note 1
°C/W Note 1
°C/W Note 1
Junction-to-Top Characterization Parameter,
8-L 6x5 DFN
Junction-to-Top Characterization Parameter,
8-L PDIP
JT
8.8
Junction-to-Top Characterization Parameter,
8-L SOIC
JT
3.2
Junction-to-Top Characterization Parameter,
5-L TO-220
JT
3.6
Junction-to-Board Characterization Parameter,
8-L 6x5 DFN
JB
15.5
36.1
60.7
4.0
Junction-to-Board Characterization Parameter,
8-L PDIP
JB
Junction-to-Board Characterization Parameter,
8-L SOIC
JB
Junction-to-Board Characterization Parameter,
5-L TO-220
JB
Note 1: Parameter is determined using a High 2S2P 4-layer board, as described in JESD 51-7, as well as in JESD
51-5, for packages with exposed pads.
2: Parameter is determined using a 1S0P 2-layer board with a cold plate attached to indicated location.
DS20002019C-page 6
2006-2016 Microchip Technology Inc.
MCP1406/07
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
10,000 pF
10,000 pF
8,200 pF
8,200 pF
1,000 pF
4,700 pF
2,500 pF
4,700 pF
1,000 pF
2,500 pF
6,800 pF
6,800 pF
100 pF
100 pF
4
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-1:
Rise Time vs. Supply
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
Voltage.
80
70
60
50
40
30
70
60
50
40
30
20
10
5V
10V
10V
15V
5V
15V
20
10
0
0
100
1000
10000
100
1000
Capacitive Load (pF)
10000
Capacitive Load (pF)
FIGURE 2-2:
Rise Time vs. Capacitive
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
Load.
30
85
VDD = 18V
VIN = 5V
tRISE
tD1
25
20
15
10
5
75
tFALL
65
tD2
55
45
35
0
4
6
8
10
12
14
16
18
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
Supply Voltage (V)
FIGURE 2-3:
Rise and Fall Times vs.
FIGURE 2-6:
Propagation Delay vs.
Temperature.
Supply Voltage.
2006-2016 Microchip Technology Inc.
DS20002019C-page 7
MCP1406/07
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
200
175
150
125
100
75
250
VDD = 12V
VDD = 18V
200
150
100
50
Input = High
Input = Low
tD1
50
tD2
0
25
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
2
3
4
5
6
7
8
9
10
Input Amplitude (V)
FIGURE 2-7:
Propagation Delay Time vs.
FIGURE 2-10:
Quiescent Current vs.
Input Amplitude.
Temperature.
55
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
VDD = 18V
VIN = 5V
50
VHI
45
40
35
tD2
VLO
tD1
30
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-8:
Propagation Delay Time vs.
FIGURE 2-11:
Input Threshold vs. Supply
Temperature.
Voltage.
2
180
160
140
120
100
80
VDD = 12V
1.9
VHI
INPUT = 1
1.8
1.7
1.6
1.5
1.4
1.3
VLO
60
40
1.2
1.1
INPUT = 0
20
0
1
4
6
8
10
12
14
16
18
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
Supply Voltage (V)
FIGURE 2-9:
Quiescent Current vs.
FIGURE 2-12:
Input Threshold vs.
Supply Voltage.
Temperature.
DS20002019C-page 8
2006-2016 Microchip Technology Inc.
MCP1406/07
Note: Unless otherwise indicated, TA = +25°C with 4.5VVDD 18V.
150
125
100
75
120
100
80
60
40
20
0
VDD = 18V
VDD = 18V
10,000 pF
1 MHz
6,800 pF
1,000 pF
50 kHz
100 kHz
2,500 pF
200 kHz
50
500 kHz
4,700 pF
25
100 pF
0
10
100
1000
100
1000
Capacitive Load (pF)
10000
Frequency (kHz)
FIGURE 2-13:
Supply Current vs.
FIGURE 2-16:
Supply Current vs.
Capacitive Load.
Frequency.
150
80
VDD = 12V
VDD = 12V
70
10,000 pF
6,800 pF
2 MHz
1 MHz
125
100
75
60
50
40
30
20
10
1,000 pF
4,700 pF
50 kHz
100 kHz
200 kHz
50
25
0
500 kHz
2,500 pF
100 pF
0
10
100
1000
100
1000
10000
Frequency (kHz)
Capacitive Load (pF)
FIGURE 2-14:
Supply Current vs.
FIGURE 2-17:
Supply Current vs.
Capacitive Load.
Frequency.
100
90
40
VDD = 6V
35
10,000 pF
6,800 pF
2 MHz
VDD = 6V
80
70
60
50
40
100 kHz
50 kHz
30
25
20
15
10
5
1 MHz
4,700 pF
1,000 pF
200 kHz
30
500 kHz
2,500 pF
20
10
0
100 pF
0
100
1000
10000
10
100
1000
Capacitive Load (pF)
Frequency (kHz)
FIGURE 2-15:
Supply Current vs.
FIGURE 2-18:
Supply Current vs.
Capacitive Load.
Frequency.
2006-2016 Microchip Technology Inc.
DS20002019C-page 9
MCP1406/07
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
7
VIN = 2.5V (MCP1407)
TJ = +125oC
VIN = 0V (MCP1406)
6
5
4
3
2
1
TJ = +25oC
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-19:
Output Resistance
(Output High) vs. Supply Voltage.
7
VIN = 0V (MCP1407)
IN = 2.5V (MCP1406)
V
6
5
4
3
2
1
TJ = +125oC
TJ = +25oC
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-20:
Output Resistance
(Output Low) vs. Supply Voltage.
100.00
10.00
1.00
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-21:
Crossover Energy vs.
Supply Voltage.
DS20002019C-page 10
2006-2016 Microchip Technology Inc.
MCP1406/07
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
(1)
TABLE 3-1:
PIN FUNCTION TABLE
5-Pin
TO-220
8-Pin
8-Pin
Symbol
Description
6x5 DFN PDIP, SOIC
—
1
1
2
1
2
VDD
INPUT
NC
Supply Input
Control Input
—
2
3
3
No Connection
Ground
4
4
GND
4
5
5
GND
Ground
5
6
6
OUTPUT
OUTPUT
VDD
CMOS Push-Pull Output
CMOS Push-Pull Output
Supply Input
—
3
7
7
8
8
—
TAB
9
—
—
EP
Exposed Metal Pad
—
VDD
Metal Tab at VDD Potential
Note 1: Duplicate pins must be connected for proper operation.
3.1
Supply Input (VDD
)
3.5
Exposed Metal Pad (6x5 DFN only)
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with local capacitors. The bypass
capacitors provide a localized low-impedance path for
the peak currents that are to be provided to the load.
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
3.2
Control Input (INPUT)
3.6
TO-220 Metal Tab
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has hys-
teresis between the high and low input levels, allowing
them to be driven from slow rising and falling signals,
and to provide noise immunity.
The metal tab on the TO-220 package is at VDD
potential. This metal tab is not intended to be the VDD
connection to MCP1406/07. VDD should be supplied
using the Supply Input pin of the TO-220.
3.3
Ground (GND)
Ground is the device return pin. The ground pin should
have a low impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
3.4
CMOS Push-Pull Output
(OUTPUT)
The output is a CMOS push-pull output that is capable
of sourcing peak currents of 6A (VDD = 18V). The low
output impedance ensures the gate of the external
MOSFET will stay in the intended state even during
large transients. The output pins also have reverse
current latch-up ratings of 1.5A.
2006-2016 Microchip Technology Inc.
DS20002019C-page 11
MCP1406/07
4.0
4.1
APPLICATION INFORMATION
General Information
VDD = 18V
1 µF
MOSFET drivers are high-speed, high current devices
which are intended to provide high peak currents to
charge the gate capacitance of external MOSFETs or
IGBTs. In high frequency switching power supplies, the
PWM controller may not have the drive capability to
directly drive the power MOSFET. A MOSFET driver
like the MCP1406/07 family can be used to provide
additional drive current capability.
0.1 µF
Ceramic
Input
Output
CL = 2500 pF
MCP1407
4.2
MOSFET Driver Timing
The ability of a MOSFET driver to transition from a
fully-OFF state to a fully-ON state are characterized by
the drivers’ rise time (tR), fall time (tF) and propagation
delays (tD1 and tD2). The MCP1406/07 family of
devices is able to make this transition very quickly.
Figure 4-1 and Figure 4-2 show the test circuits and
timing waveforms used to verify the MCP1406/07
timing.
+5V
90%
Input
10%
0V
18V
90%
90%
tD1
tD2
tF
tR
Output
0V
10%
10%
VDD = 18V
0.1 µF
1 µF
Input Signal: tRISE = tFALL = 10ns,
100 Hz, 0-5V Square Wave
Ceramic
FIGURE 4-2:
Waveform.
Non-Inverting Driver Timing
Input
Output
CL = 2500 pF
MCP1406
4.3
Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, 2.25A are
needed to charge a 2500 pF load with 18V in 20 ns.
+5V
90%
Input
0V
10%
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and a
low ESR film capacitor are recommended to be placed
in parallel between the driver VDD and the GND. A
tD1
90%
10%
tD2
tF
tR
18V
90%
Output
1.0 µF low ESR film capacitor and
a 0.1 µF
10%
0V
ceramic capacitor placed between pins 1, 8 and 4, 5
should be used. These capacitors should be placed
close to the driver to minimize circuit board parasitics
and provide a local source for the required current.
Input Signal: tRISE = tFALL = 10ns,
100 Hz, 0-5V Square Wave
FIGURE 4-1:
Inverting Driver Timing
Waveform.
DS20002019C-page 12
2006-2016 Microchip Technology Inc.
MCP1406/07
4.5.2
QUIESCENT POWER DISSIPATION
4.4
PCB Layout Considerations
The power dissipation associated with the quiescent
current draw depends on the state of the input pin. The
MCP1406/07 devices have a quiescent current draw
when the input is high of 0.13 mA (typ) and 0.035 mA
(typ) when the input is low. The quiescent power dissi-
pation can be determined by using this equation:
Proper PCB layout is important in a high current,
fast switching circuit to provide proper device operation
and robustness of design. PCB trace loop area and
inductance should be minimized by the use of a ground
plane or ground trace located under the MOSFET gate
drive signals, separate analog and power grounds, and
local driver decoupling.
EQUATION 4-3:
The MCP1406/07 devices have two pins each for VDD
,
OUTPUT and GND. Both pins must be used for proper
operation. This also lowers path inductance which will,
along with proper decoupling, help minimize ringing in
the circuit.
PQ = IQH D + IQL 1 – D VDD
Where:
IQH
D
=
=
=
=
Quiescent current in the high state
Duty cycle
Placing a ground plane beneath the MCP1406/07 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
IQL
VDD
Quiescent current in the low state
MOSFET driver supply voltage
4.5
Power Dissipation
4.5.3
OPERATING POWER DISSIPATION
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements, which can be calculated by using the
following equation:
The operating power dissipation occurs each time the
MOSFET driver output transitions; this is because, for
a very short period of time, both MOSFETs in the output
stage are ON simultaneously. This cross-conduction
current leads to a power dissipation, as described by
the following equation:
EQUATION 4-1:
PT = PL + PQ + PCC
Where:
EQUATION 4-4:
PCC = CC f VDD
Where:
PT
PL
=
=
=
=
Total power dissipation
Load power dissipation
CC
f
=
=
=
Cross-conduction constant (A sec.)
Switching frequency
PQ
Quiescent power dissipation
Operating power dissipation
PCC
VDD
MOSFET driver supply voltage
4.5.1
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET can be determined by means of this
equation:
EQUATION 4-2:
2
PL = f CT VDD
Where:
f
=
Switching frequency
CT = Total load capacitance
VDD
=
MOSFET driver supply voltage
2006-2016 Microchip Technology Inc.
DS20002019C-page 13
MCP1406/07
5.0
5.1
PACKAGING INFORMATION
Package Marking Information (Not to Scale)
Example
8-Lead SOIC (3.90 mm)
MCP1406E
e
3
SN ^1510
256
NNN
5-Lead TO-220
Example
MCP1406
XXXXXXXXX
XXXXXXXXX
YYWWNNN
e
3
EAT
15102562
Example
8-Lead DFN-S (6x5x0.9 mm)
MCP1406
e
3
E/MF
1510
256
NNN
PIN 1
PIN 1
Legend: XX...X Customer-specific information
Y
YY
WW
NNN
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator (
)
e3
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
DS20002019C-page 14
2006-2016 Microchip Technology Inc.
MCP1406/07
8-Lead PDIP (300 mil)
Example
XXXXXXXX
XXXXXNNN
MCP1407
E/P 256
1510
e
3
YYWW
Legend: XX...X Customer-specific information
Y
YY
WW
NNN
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
)
e3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2006-2016 Microchip Technology Inc.
DS20002019C-page 15
MCP1406/07
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢏꢉꢋꢉꢊꢐꢎꢆꢑꢒꢊꢈꢋꢏꢃꢆꢓꢔꢍꢕꢆꢖꢍꢑꢁꢗꢗꢘꢙ
ꢚꢐꢊꢃꢛ ꢧꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢨꢊꢛꢅꢉꢋꢓꢊꢦꢃꢆꢛꢇꢩꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢪꢊꢎꢨꢊꢛꢃꢆꢛꢉꢝꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ
ꢒꢍꢍꢔꢢꢫꢫꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢫꢔꢊꢎꢨꢊꢛꢃꢆꢛ
A
E
φP
CHAMFER
OPTIONAL
A1
Q
H1
D
D1
L
N
1
2
3
e
c
b
e1
A2
ꢬꢆꢃꢍꢇꢭꢮꢡꢯꢌꢝ
ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢉꢰꢃꢄꢃꢍꢇ
ꢕꢭꢮ
ꢮꢱꢕ
ꢕꢜꢲ
ꢮꢐꢄꢳꢅꢓꢉꢈꢑꢉꢪꢃꢆꢇꢮ
ꢪꢃꢍꢎꢒ
ꢘ
ꢅ
ꢁꢗꢴꢵꢉꢠꢝꢡ
ꢱꢥꢅꢓꢊꢏꢏꢉꢪꢃꢆꢉꢪꢃꢍꢎꢒ
ꢱꢥꢅꢓꢊꢏꢏꢉꢯꢅꢃꢛꢒꢍ
ꢱꢥꢅꢓꢊꢏꢏꢉꢹꢃꢋꢍꢒ
ꢱꢥꢅꢓꢊꢏꢏꢉꢰꢅꢆꢛꢍꢒ
ꢕꢈꢏꢋꢅꢋꢉꢪꢊꢎꢨꢊꢛꢅꢉꢰꢅꢆꢛꢍꢒ
ꢣꢊꢳꢉꢰꢅꢆꢛꢍꢒ
ꢅꢀ
ꢜ
ꢌ
ꢁꢚꢴꢶꢉꢠꢝꢡ
ꢁꢀꢟꢗ
ꢁꢺꢶꢗ
ꢁꢘꢴꢗ
ꢁꢺꢺꢗ
ꢁꢚꢗꢟ
ꢁꢗꢚꢗ
ꢁꢀꢗꢗ
ꢁꢀꢺꢸ
ꢁꢟꢶꢚ
ꢁꢗꢶꢗ
ꢁꢗꢀꢚ
ꢁꢗꢀꢘ
ꢷ
ꢷ
ꢷ
ꢷ
ꢷ
ꢷ
ꢷ
ꢷ
ꢷ
ꢁꢀꢸꢗ
ꢁꢟꢚꢗ
ꢁꢴꢘꢗ
ꢁꢺꢘꢘ
ꢁꢚꢸꢺ
ꢁꢗꢘꢘ
ꢁꢀꢚꢗ
ꢁꢀꢘꢴ
ꢁꢘꢸꢗ
ꢁꢀꢀꢘ
ꢁꢗꢚꢘ
ꢁꢗꢟꢗ
ꢂ
ꢂꢀ
ꢯꢀ
ꢜꢀ
ꢻ
ꢀꢪ
ꢰ
ꢜꢚ
ꢎ
ꢳ
ꢣꢊꢳꢉꢣꢒꢃꢎꢨꢆꢅꢇꢇ
ꢕꢈꢐꢆꢍꢃꢆꢛꢉꢯꢈꢏꢅꢉꢡꢅꢆꢍꢅꢓ
ꢕꢈꢐꢆꢍꢃꢆꢛꢉꢯꢈꢏꢅꢉꢂꢃꢊꢄꢅꢍꢅꢓ
ꢰꢅꢊꢋꢉꢰꢅꢆꢛꢍꢒ
ꢠꢊꢇꢅꢉꢍꢈꢉꢠꢈꢍꢍꢈꢄꢉꢈꢑꢉꢰꢅꢊꢋ
ꢰꢅꢊꢋꢉꢣꢒꢃꢎꢨꢆꢅꢇꢇ
ꢷ
ꢷ
ꢁꢗꢚꢵ
ꢰꢅꢊꢋꢉꢹꢃꢋꢍꢒ
ꢚꢐꢊꢃꢉꢛ
ꢀꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢇꢉꢂꢉꢊꢆꢋꢉꢌꢉꢋꢈꢉꢆꢈꢍꢉꢃꢆꢎꢏꢐꢋꢅꢉꢄꢈꢏꢋꢉꢑꢏꢊꢇꢒꢉꢈꢓꢉꢔꢓꢈꢍꢓꢐꢇꢃꢈꢆꢇꢁꢉꢕꢈꢏꢋꢉꢑꢏꢊꢇꢒꢉꢈꢓꢉꢔꢓꢈꢍꢓꢐꢇꢃꢈꢆꢇꢉꢇꢒꢊꢏꢏꢉꢆꢈꢍꢉꢅꢖꢎꢅꢅꢋꢉꢁꢗꢗꢘꢙꢉꢔꢅꢓꢉꢇꢃꢋꢅꢁ
ꢚꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢃꢆꢛꢉꢊꢆꢋꢉꢍꢈꢏꢅꢓꢊꢆꢎꢃꢆꢛꢉꢔꢅꢓꢉꢜꢝꢕꢌꢉꢞꢀꢟꢁꢘꢕꢁ
ꢠꢝꢡꢢ ꢠꢊꢇꢃꢎꢉꢂꢃꢄꢅꢆꢇꢃꢈꢆꢁꢉꢣꢒꢅꢈꢓꢅꢍꢃꢎꢊꢏꢏꢤꢉꢅꢖꢊꢎꢍꢉꢥꢊꢏꢐꢅꢉꢇꢒꢈꢦꢆꢉꢦꢃꢍꢒꢈꢐꢍꢉꢍꢈꢏꢅꢓꢊꢆꢎꢅꢇꢁ
ꢕꢃꢎꢓꢈꢎꢒꢃꢔ ꢣꢅꢎꢒꢆꢈꢏꢈꢛꢤ ꢂꢓꢊꢦꢃꢆꢛ ꢡꢗꢟꢼꢗꢺꢴꢠ
DS20002019C-page 16
2006-2016 Microchip Technology Inc.
MCP1406/07
ꢜꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢝꢒꢄꢈꢆꢞꢈꢄꢊꢟꢆꢚꢐꢆꢂꢃꢄꢅꢆꢇꢄꢌꢠꢄꢡꢃꢆꢓꢢꢞꢕꢆꢣꢆꢤꢥꢀꢆꢦꢦꢆꢧꢐꢅꢨꢆꢖꢝꢞꢚꢁꢩꢙ
ꢚꢐꢊꢃꢛ ꢧꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢨꢊꢛꢅꢉꢋꢓꢊꢦꢃꢆꢛꢇꢩꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢪꢊꢎꢨꢊꢛꢃꢆꢛꢉꢝꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ
ꢒꢍꢍꢔꢢꢫꢫꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢫꢔꢊꢎꢨꢊꢛꢃꢆꢛ
ꢉ
e
D
L
b
N
N
K
E
E2
EXPOSED PAD
NOTE 1
NOTE 1
1
2
1
2
D2
BOTTOM VIEW
TOP VIEW
A
A3
A1
NOTE 2
ꢬꢆꢃꢍꢇꢕꢭꢰꢰꢭꢕꢌꢣꢌꢽꢝ
ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢉꢰꢃꢄꢃꢍꢇ
ꢕꢭꢮ
ꢮꢱꢕ
ꢕꢜꢲ
ꢮꢐꢄꢳꢅꢓꢉꢈꢑꢉꢪꢃꢆꢇꢮ
ꢪꢃꢍꢎꢒ
ꢱꢥꢅꢓꢊꢏꢏꢉꢯꢅꢃꢛꢒꢍ
ꢝꢍꢊꢆꢋꢈꢑꢑꢉ
ꢡꢈꢆꢍꢊꢎꢍꢉꢣꢒꢃꢎꢨꢆꢅꢇꢇ
ꢱꢥꢅꢓꢊꢏꢏꢉꢰꢅꢆꢛꢍꢒ
ꢱꢥꢅꢓꢊꢏꢏꢉꢹꢃꢋꢍꢒ
ꢌꢖꢔꢈꢇꢅꢋꢉꢪꢊꢋꢉꢰꢅꢆꢛꢍꢒ
ꢌꢖꢔꢈꢇꢅꢋꢉꢪꢊꢋꢉꢹꢃꢋꢍꢒ
ꢡꢈꢆꢍꢊꢎꢍꢉꢹꢃꢋꢍꢒ
ꢶ
ꢅ
ꢜ
ꢜꢀ
ꢜꢺ
ꢂ
ꢀꢁꢚꢵꢉꢠꢝꢡ
ꢗꢁꢶꢘ
ꢗꢁꢗꢀ
ꢗꢁꢚꢗꢉꢽꢌꢧ
ꢘꢁꢗꢗꢉꢠꢝꢡ
ꢴꢁꢗꢗꢉꢠꢝꢡ
ꢟꢁꢗꢗ
ꢚꢁꢺꢗ
ꢗꢁꢟꢗ
ꢗꢁꢴꢗ
ꢷ
ꢗꢁꢶꢗ
ꢗꢁꢗꢗ
ꢀꢁꢗꢗ
ꢗꢁꢗꢘ
ꢌ
ꢂꢚ
ꢌꢚ
ꢳ
ꢰ
ꢾ
ꢺꢁꢸꢗ
ꢚꢁꢚꢗ
ꢗꢁꢺꢘ
ꢗꢁꢘꢗ
ꢗꢁꢚꢗ
ꢟꢁꢀꢗ
ꢚꢁꢟꢗ
ꢗꢁꢟꢶ
ꢗꢁꢵꢘ
ꢷ
ꢡꢈꢆꢍꢊꢎꢍꢉꢰꢅꢆꢛꢍꢒ
ꢡꢈꢆꢍꢊꢎꢍꢼꢍꢈꢼꢌꢖꢔꢈꢇꢅꢋꢉꢪꢊꢋ
ꢚꢐꢊꢃꢉꢛ
ꢀꢁ ꢪꢃꢆꢉꢀꢉꢥꢃꢇꢐꢊꢏꢉꢃꢆꢋꢅꢖꢉꢑꢅꢊꢍꢐꢓꢅꢉꢄꢊꢤꢉꢥꢊꢓꢤꢩꢉꢳꢐꢍꢉꢄꢐꢇꢍꢉꢳꢅꢉꢏꢈꢎꢊꢍꢅꢋꢉꢦꢃꢍꢒꢃꢆꢉꢍꢒꢅꢉꢒꢊꢍꢎꢒꢅꢋꢉꢊꢓꢅꢊꢁ
ꢚꢁ ꢪꢊꢎꢨꢊꢛꢅꢉꢄꢊꢤꢉꢒꢊꢥꢅꢉꢈꢆꢅꢉꢈꢓꢉꢄꢈꢓꢅꢉꢅꢖꢔꢈꢇꢅꢋꢉꢍꢃꢅꢉꢳꢊꢓꢇꢉꢊꢍꢉꢅꢆꢋꢇꢁ
ꢺꢁ ꢪꢊꢎꢨꢊꢛꢅꢉꢃꢇꢉꢇꢊꢦꢉꢇꢃꢆꢛꢐꢏꢊꢍꢅꢋꢁ
ꢟꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢃꢆꢛꢉꢊꢆꢋꢉꢍꢈꢏꢅꢓꢊꢆꢎꢃꢆꢛꢉꢔꢅꢓꢉꢜꢝꢕꢌꢉꢞꢀꢟꢁꢘꢕꢁ
ꢠꢝꢡꢢ ꢠꢊꢇꢃꢎꢉꢂꢃꢄꢅꢆꢇꢃꢈꢆꢁꢉꢣꢒꢅꢈꢓꢅꢍꢃꢎꢊꢏꢏꢤꢉꢅꢖꢊꢎꢍꢉꢥꢊꢏꢐꢅꢉꢇꢒꢈꢦꢆꢉꢦꢃꢍꢒꢈꢐꢍꢉꢍꢈꢏꢅꢓꢊꢆꢎꢅꢇꢁ
ꢽꢌꢧꢢ ꢽꢅꢑꢅꢓꢅꢆꢎꢅꢉꢂꢃꢄꢅꢆꢇꢃꢈꢆꢩꢉꢐꢇꢐꢊꢏꢏꢤꢉꢦꢃꢍꢒꢈꢐꢍꢉꢍꢈꢏꢅꢓꢊꢆꢎꢅꢩꢉꢑꢈꢓꢉꢃꢆꢑꢈꢓꢄꢊꢍꢃꢈꢆꢉꢔꢐꢓꢔꢈꢇꢅꢇꢉꢈꢆꢏꢤꢁ
ꢕꢃꢎꢓꢈꢎꢒꢃꢔ ꢣꢅꢎꢒꢆꢈꢏꢈꢛꢤ ꢂꢓꢊꢦꢃꢆꢛ ꢡꢗꢟꢼꢀꢚꢚꢠ
2006-2016 Microchip Technology Inc.
DS20002019C-page 17
MCP1406/07
ꢚꢐꢊꢃꢛ ꢧꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢨꢊꢛꢅꢉꢋꢓꢊꢦꢃꢆꢛꢇꢩꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢪꢊꢎꢨꢊꢛꢃꢆꢛꢉꢝꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ
ꢒꢍꢍꢔꢢꢫꢫꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢫꢔꢊꢎꢨꢊꢛꢃꢆꢛ
DS20002019C-page 18
2006-2016 Microchip Technology Inc.
MCP1406/07
8-Lead Plastic Dual In-Line (P) - 300 mil Body [PDIP]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
A
N
B
E1
NOTE 1
1
2
TOP VIEW
E
A2
A
C
PLANE
L
c
A1
e
eB
8X b1
8X b
.010
C
SIDE VIEW
END VIEW
Microchip Technology Drawing No. C04-018D Sheet 1 of 2
2006-2016 Microchip Technology Inc.
DS20002019C-page 19
MCP1406/07
8-Lead Plastic Dual In-Line (P) - 300 mil Body [PDIP]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
ALTERNATE LEAD DESIGN
(VENDOR DEPENDENT)
DATUM A
DATUM A
b
b
e
2
e
2
e
e
Units
Dimension Limits
INCHES
NOM
8
.100 BSC
-
MIN
MAX
Number of Pins
Pitch
N
e
A
Top to Seating Plane
-
.210
.195
-
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
A2
A1
E
E1
D
L
c
b1
b
eB
.115
.015
.290
.240
.348
.115
.008
.040
.014
-
.130
-
.310
.250
.365
.130
.010
.060
.018
-
.325
.280
.400
.150
.015
.070
.022
.430
Lower Lead Width
Overall Row Spacing
§
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-018D Sheet 2 of 2
DS20002019C-page 20
2006-2016 Microchip Technology Inc.
MCP1406/07
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2006-2016 Microchip Technology Inc.
DS20002019C-page 21
MCP1406/07
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002019C-page 22
2006-2016 Microchip Technology Inc.
MCP1406/07
ꢜꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢩꢦꢄꢈꢈꢆꢑꢒꢊꢈꢋꢏꢃꢆꢓꢩꢚꢕꢆꢣꢆꢚꢄꢎꢎꢐꢪꢟꢆꢫꢬꢭꢘꢆꢦꢦꢆꢧꢐꢅꢨꢆꢖꢩꢑꢮꢯꢙ
ꢚꢐꢊꢃꢛ ꢧꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢨꢊꢛꢅꢉꢋꢓꢊꢦꢃꢆꢛꢇꢩꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢪꢊꢎꢨꢊꢛꢃꢆꢛꢉꢝꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ
ꢒꢍꢍꢔꢢꢫꢫꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢫꢔꢊꢎꢨꢊꢛꢃꢆꢛ
2006-2016 Microchip Technology Inc.
DS20002019C-page 23
MCP1406/07
NOTES:
DS20002019C-page 24
2006-2016 Microchip Technology Inc.
MCP1406/07
APPENDIX A: REVISION HISTORY
Revision C (April 2016)
The following is the list of modifications:
• Updated the Package Thermal Resistances sec-
tion of Temperature Characteristics table with the
latest information.
• Updated Figure 2-21 in Section 2.0 “Typical
Performance Curves”.
Revision B (May 2012)
The following is the list of modifications:
Removed the information referring to the
Electrostatic Discharge from the General
Description section.
Revision A (December 2006)
Original release of this document.
2006-2016 Microchip Technology Inc.
DS20002019C-page 25
MCP1406/07
NOTES:
DS20002019C-page 26
2006-2016 Microchip Technology Inc.
MCP1406/07
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
XX
XXX
Examples:
a) MCP1406-E/MF: 6A High-Speed MOSFET
Driver, Inverting,
Temperature Package Tape & Reel
Range
8LD DFN Package
b) MCP1406-E/AT: 6A High-Speed MOSFET
Driver, Inverting,
Device:
MCP1406: 6A High-Speed MOSFET Driver,
Inverting
5LD TO-220 Package
MCP1406T: 6A High-Speed MOSFET Driver,
Inverting, Tape and Reel
MCP1407: 6A High-Speed MOSFET Driver,
Non-Inverting
c) MCP1406-E/SN: 6A High-Speed MOSFET
Driver, Inverting,
8LD SOIC Package
d) MCP1406-E/P:
6A High-Speed MOSFET
Driver, Inverting,
MCP1407T: 6A High-Speed MOSFET Driver,
Non-Inverting, Tape and Reel
8LD PDIP Package
e) MCP1406T-E/MF: Tape and Reel,
6A High-Speed MOSFET
Temperature Range:
Package: *
E
=
-40°C to +125°C
Driver, Inverting,
8LD DFN Package
AT
MF
=
=
Plastic Transistor Outline, 5-Lead (TO-220)
Plastic Dual Flat - 6x5 mm Body,
8-Lead (DFN-S)
Plastic Dual In-Line - 300 mil Body,
8-Lead (PDIP)
f)
MCP1406T-E/SN: Tape and Reel,
6A High-Speed MOSFET
Driver, Inverting,
8LD SOIC Package
P
=
=
SN
Plastic Small Outline - Narrow, 3.90 mm Body,
8-Lead (SOIC)
a) MCP1407-E/MF: 6A High-Speed MOSFET
Driver, Non-Inverting,
* All package offerings are Pb Free (Lead Free)
8LD DFN Package
b) MCP1407-E/AT: 6A High-Speed MOSFET
Driver, Non-Inverting,
5LD TO-220 Package
c) MCP1407-E/SN: 6A High-Speed MOSFET
Driver, Non-Inverting,
8LD SOIC Package
d) MCP1407-E/P:
6A High-Speed MOSFET
Driver, Non-Inverting,
8LD PDIP Package
e) MCP1407T-E/MF: Tape and Reel,
6A High-Speed MOSFET
Driver, Non-Inverting,
8LD DFN Package
f)
MCP1407T-E/SN: Tape and Reel,
6A High-Speed MOSFET
Driver, Non-Inverting,
8LD SOIC Package
2006-2016 Microchip Technology Inc.
DS20002019C-page 27
MCP1406/07
NOTES:
DS20002019C-page 28
2006-2016 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate,
dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ,
KEELOQ logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,
RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company,
ETHERSYNCH, Hyper Speed Control, HyperLight Load,
IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
QUALITYꢀMANAGEMENTꢀꢀSYSTEMꢀ
CERTIFIEDꢀBYꢀDNVꢀ
© 2006-2016, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0450-7
== ISO/TSꢀ16949ꢀ==ꢀ
2006-2016 Microchip Technology Inc.
DS20002019C-page 29
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Asia Pacific Office
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
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Fax: 61-2-9868-6755
Web Address:
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Tel: 678-957-9614
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Tel: 49-721-625370
India - Pune
Tel: 91-20-3019-1500
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Tel: 86-28-8665-5511
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Tel: 81-6-6152-7160
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Boston
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
China - Dongguan
Tel: 86-769-8702-9880
Italy - Venice
Tel: 39-049-7625286
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Seoul
Cleveland
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Poland - Warsaw
Tel: 48-22-3325737
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
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Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
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Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Sweden - Stockholm
Tel: 46-8-5090-4654
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Detroit
Novi, MI
UK - Wokingham
Tel: 44-118-921-5800
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
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Fax: 63-2-634-9069
Tel: 248-848-4000
Fax: 44-118-921-5820
Houston, TX
Tel: 281-894-5983
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
New York, NY
Tel: 631-435-6000
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
San Jose, CA
Tel: 408-735-9110
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Canada - Toronto
Tel: 905-673-0699
Fax: 905-673-6509
07/14/15
DS20002019C-page 30
2006-2016 Microchip Technology Inc.
相关型号：
MCP1415R
The MCP1415R/16R (different pin configuration of MCP1415/16) devices are small(Tiny) footprint Low
MICROCHIP
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