MCP1640T-I/MC [MICROCHIP]
0.65V Start-up Synchronous Boost Regulator with True Output Disconnect or Input/Output Bypass Option; 0.65V启动同步升压稳压器具有真正输出断接和输入/输出旁路选项型号: | MCP1640T-I/MC |
厂家: | MICROCHIP |
描述: | 0.65V Start-up Synchronous Boost Regulator with True Output Disconnect or Input/Output Bypass Option |
文件: | 总32页 (文件大小:474K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MCP1640/B/C/D
0.65V Start-up Synchronous Boost Regulator with True
Output Disconnect or Input/Output Bypass Option
Features
General Description
• Up to 96% Typical Efficiency
The MCP1640/B/C/D is a compact, high-efficiency,
fixed frequency, synchronous step-up DC-DC con-
verter. It provides an easy-to-use power supply solution
for applications powered by either one-cell, two-cell, or
three-cell alkaline, NiCd, NiMH, one-cell Li-Ion or
Li-Polymer batteries.
• 800 mA Typical Peak Input Current Limit:
- IOUT > 100 mA @ 1.2V VIN, 3.3V VOUT
- IOUT > 350 mA @ 2.4V VIN, 3.3V VOUT
- IOUT > 350 mA @ 3.3V VIN, 5.0V VOUT
• Low Start-up Voltage: 0.65V, typical 3.3V VOUT
@ 1 mA
Low-voltage technology allows the regulator to start up
without high inrush current or output voltage overshoot
from a low 0.65V input. High efficiency is accomplished
by integrating the low resistance N-Channel Boost
switch and synchronous P-Channel switch. All
compensation and protection circuitry are integrated to
minimize external components. For standby
applications, the MCP1640 operates and consumes
only 19 µA while operating at no load and provides a
true disconnect from input to output while shut down
(EN = GND). Additional device options are available
that operate in PWM only mode and connect input to
output bypass while shut down.
• Low Operating Input Voltage: 0.35V, typical
3.3VOUT @ 1 mA
• Adjustable Output Voltage Range: 2.0V to 5.5V
• Maximum Input Voltage VOUT < 5.5V
• Automatic PFM/PWM Operation (MCP1640/C):
- PFM Operation Disabled (MCP1640B/D)
- PWM Operation: 500 kHz
• Low Device Quiescent Current: 19 µA, typical
PFM Mode
• Internal Synchronous Rectifier
• Internal Compensation
A “true” load disconnect mode provides input to output
isolation while disabled by removing the normal boost
regulator diode path from input to output. A bypass
mode option connects the input to the output using the
integrated low resistance P-Channel MOSFET, which
provides a low bias keep alive voltage for circuits
operating in Deep Sleep mode. Both options consume
less than 1 µA of input current.
• Inrush Current Limiting and Internal Soft-Start
• Selectable, Logic Controlled, Shutdown States:
- True Load Disconnect Option (MCP1640/B)
- Input to Output Bypass Option (MCP1640C/D)
• Shutdown Current (All States): < 1 µA
• Low Noise, Anti-Ringing Control
• Overtemperature Protection
Output voltage is set by a small external resistor
divider. Two package options, SOT23-6 and 2x3
DFN-8, are available.
• Available Packages:
- SOT23-6
- 2x3 8-Lead DFN
Package Types
Applications
MCP1640
MCP1640
6-Lead SOT23
2x3 DFN*
• One, Two and Three Cell Alkaline and NiMH/NiCd
Portable Products
VIN
V
V
V
V
SW
GND
EN
1
2
8
7
1
6
5
4
• Single Cell Li-Ion to 5V Converters
• Li Coin Cell Powered Devices
• Personal Medical Products
• Wireless Sensors
FB
IN
S
P
EP
9
GND
OUTS
OUTP
VOUT
VFB
2
3
3
4
6
5
GND
EN
SW
• Handheld Instruments
• GPS Receivers
* Includes Exposed Thermal Pad (EP); see Table 3-1.
• Bluetooth Headsets
• +3.3V to +5.0V Distributed Power Supply
2010 Microchip Technology Inc.
DS22234A-page 1
MCP1640/B/C/D
L1
4.7 µH
VOUT
VIN
3.3V @ 100 mA
SW
V
0.9V To 1.7V
OUT
V
IN
976 K
COUT
10 µF
CIN
4.7 µF
+
V
FB
EN
562 K
GND
-
L1
4.7 µH
VOUT
5.0V @ 300 mA
VIN
SW
V
3.0V To 4.2V
OUTS
V
IN
V
OUTP
976 K
COUT
10 µF
CIN
4.7 µF
+
V
FB
EN
309 K
P
S
-
GND
GND
Efficiency vs. IOUT for 3.3VOUT
100.0
80.0
60.0
40.0
VIN = 2.5V
VIN = 0.8V
VIN = 1.2V
0.1
1.0
10.0
100.0
1000.0
Output Current (mA)
DS22234A-page 2
2010 Microchip Technology Inc.
MCP1640/B/C/D
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
EN, FB, VIN, VSW, VOUT - GND...........................+6.5V
EN, FB ...........<greater of VOUT or VIN > (GND - 0.3V)
Output Short Circuit Current....................... Continuous
Output Current Bypass Mode...........................400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature .........................-65oC to +150oC
Ambient Temp. with Power Applied......-40oC to +85oC
Operating Junction Temperature........-40oC to +125oC
ESD Protection On All Pins:
HBM........................................................ 3 kV
MM........................................................300 V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, V = 1.2V, C
= C = 10 µF, L = 4.7 µH, V
= 3.3V, I
= 15 mA,
IN
OUT
IN
OUT
OUT
T = +25°C.
A
o
o
Boldface specifications apply over the T range of -40 C to +85 C.
A
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Characteristics
Minimum Start-Up Voltage
VIN
VIN
—
—
0.65
0.35
0.8
V
V
Note 1
Note 1
Minimum Input Voltage After
Start-Up
—
Output Voltage Adjust Range
Maximum Output Current
VOUT
IOUT
2.0
5.5
—
V
VOUT VIN; Note 2
1.2V VIN, 2.0V VOUT
1.5V VIN, 3.3V VOUT
3.3V VIN, 5.0V VOUT
—
150
150
350
1.21
10
mA
mA
mA
V
100
—
—
Feedback Voltage
VFB
IVFB
1.175
—
1.245
—
Feedback Input Bias Current
pA
µA
—
Quiescent Current – PFM
Mode
IQPFM
—
19
30
Measured at VOUT = 4.0V;
EN = VIN, IOUT = 0 mA;
Note 3
Quiescent Current – PWM
Mode
IQPWM
—
—
220
0.7
—
µA
µA
Measured at VOUT; EN = VIN
IOUT = 0 mA; Note 3
Quiescent Current – Shutdown
IQSHDN
2.3
VOUT = EN = GND;
Includes N-Channel and
P-Channel Switch Leakage
NMOS Switch Leakage
PMOS Switch Leakage
INLK
IPLK
—
—
0.3
1
µA
µA
VIN = VSW = 5V; VOUT =
5.5V VEN = VFB = GND
0.05
0.2
VIN = VSW = GND;
VOUT = 5.5V
NMOS Switch ON Resistance
PMOS Switch ON Resistance
RDS(ON)N
RDS(ON)P
—
—
0.6
0.9
—
—
VIN = 3.3V, ISW = 100 mA
VIN = 3.3V, ISW = 100 mA
Note 1: 3.3 K resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: Q is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be
estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
I
4: 220 resistive load, 3.3VOUT (15 mA).
5: Peak current limit determined by characterization, not production tested.
2010 Microchip Technology Inc.
DS22234A-page 3
MCP1640/B/C/D
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V = 1.2V, C
= C = 10 µF, L = 4.7 µH, V
= 3.3V, I
= 15 mA,
IN
OUT
IN
OUT
OUT
T = +25°C.
A
o
o
Boldface specifications apply over the T range of -40 C to +85 C.
A
Parameters
Sym
Min
Typ
Max
Units
Conditions
NMOS Peak Switch Current
Limit
IN(MAX)
600
850
—
mA
Note 5
V
OUT Accuracy
VOUT
%
-3
-1
—
+3
1
%
Includes Line and Load
Regulation; VIN = 1.5V
Line Regulation
Load Regulation
VOUT
VOUT) /
VIN|
/
0.01
%/V
VIN = 1.5V to 3V
IOUT = 25 mA
VOUT
VOUT
/
-1
0.01
1
%
IOUT = 25 mA to 100 mA;
VIN = 1.5V
|
Maximum Duty Cycle
Switching Frequency
EN Input Logic High
EN Input Logic Low
EN Input Leakage Current
Soft-start Time
DCMAX
fSW
88
425
90
—
90
500
—
—
575
—
%
kHz
IOUT = 1 mA
IOUT = 1 mA
VEN = 5V
VIH
%of VIN
%of VIN
µA
—
VIL
20
—
—
—
IENLK
tSS
0.005
750
—
µS
EN Low to High, 90% of
VOUT; Note 4
—
—
—
—
Thermal Shutdown Die
Temperature
TSD
150
C
C
Die Temperature Hysteresis
TSDHYS
10
Note 1: 3.3 K resistive load, 3.3VOUT (1 mA).
2: For VIN > VOUT, VOUT will not remain in regulation.
3: IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be
estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).
4: 220 resistive load, 3.3VOUT (15 mA).
5: Peak current limit determined by characterization, not production tested.
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Junction Temperature
Range
TJ
-40
—
+125
°C
Steady State
Storage Temperature Range
TA
TJ
-65
—
—
—
+150
+150
°C
°C
Maximum Junction Temperature
Package Thermal Resistances
Thermal Resistance, 5L-TSOT23
Thermal Resistance, 8L-2x3 DFN
Transient
JA
JA
—
—
192
93
—
—
°C/W EIA/JESD51-3 Standard
°C/W
DS22234A-page 4
2010 Microchip Technology Inc.
MCP1640/B/C/D
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, V = EN = 1.2V, C
= C = 10 µF, L = 4.7 µH, V
= 3.3V, I
= 15 mA, T = +25°C.
IN
OUT
IN
OUT
LOAD
A
VOUT = 2.0V
27.5
100
90
80
70
60
50
40
30
20
10
VIN = 1.6V
VOUT = 5.0V
VIN = 1.2V
25.0
22.5
20.0
17.5
15.0
12.5
10.0
VIN = 0.8V
VOUT = 3.3V
VIN = 1.2V
PWM / PFM
PWM ONLY
VOUT = 2.0V
0
0.01
0.1
1
10
100
1000
-40
-25
-10
5
20
35
50
65
80
IOUT (mA)
Ambient Temperature (°C)
FIGURE 2-1:
VOUT IQ vs. Ambient
FIGURE 2-4:
2.0V VOUT PFM / PWM
Temperature in PFM Mode.
Mode Efficiency vs. IOUT.
VOUT = 3.3V
100
90
80
70
60
50
40
30
20
10
0
VIN = 2.5V
300
VOUT = 5.0V
VIN = 1.2V
275
250
225
200
175
150
VIN = 0.8V
VIN = 1.2V
VOUT = 3.3V
PWM / PFM
PWM ONLY
0.01
0.1
1
10
100
1000
-40
-25
-10
5
20
35
50
65
80
IOUT (mA)
Ambient Temperature (°C)
FIGURE 2-2:
VOUT IQ vs. Ambient
FIGURE 2-5:
3.3V VOUT PFM / PWM
Temperature in PWM Mode.
Mode Efficiency vs. IOUT
.
600
100
90
80
70
60
50
40
30
20
10
0
VOUT = 5.0V
VIN = 2.5V
VOUT = 5.0V
500
VOUT = 3.3V
VIN = 1.8V
VIN = 1.2V
400
VOUT = 2.0V
300
200
100
0
PWM / PFM
PWM ONLY
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.01
0.1
1
10
100
1000
VIN (V)
IOUT (mA)
FIGURE 2-3:
Maximum IOUT vs. VIN.
FIGURE 2-6:
5.0V VOUT PFM / PWM
Mode Efficiency vs. IOUT
.
2010 Microchip Technology Inc.
DS22234A-page 5
MCP1640/B/C/D
Note: Unless otherwise indicated, V = EN = 1.2V, C
= C = 10 µF, L = 4.7 µH, V
= 3.3V, I
= 15 mA, T = +25°C.
IN
OUT
IN
OUT
LOAD A
3.33
1.00
VIN = 1.2V
IOUT = 15 mA
VOUT = 3.3V
3.325
3.32
0.85
0.70
0.55
0.40
0.25
VIN = 1.8V
Startup
3.315
3.31
3.305
3.3
Shutdown
VIN = 0.8V
3.295
3.29
3.285
0
20
40
60
80
100
-40
-25
-10
5
20
35
50
65
80
IOUT (mA)
Ambient Temperature (°C)
FIGURE 2-7:
3.3V VOUT vs. Ambient
FIGURE 2-10:
Minimum Start-up and
Temperature.
Shutdown VIN into Resistive Load vs. IOUT
.
3.38
3.36
3.34
3.32
3.30
525
520
515
510
505
500
495
490
485
480
VOUT = 3.3V
VIN = 1.5V
IOUT = 5 mA
IOUT = 15 mA
3.28
3.26
IOUT = 50 mA
-10
-40
-25
5
20
35
50
65
80
-40
-25
-10
5
20
35
50
65
80
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-8:
3.3V VOUT vs. Ambient
FIGURE 2-11:
F
OSC vs. Ambient
Temperature.
Temperature.
3.40
4.5
4
TA = 85°C
IOUT = 5 mA
VOUT = 5.0V
3.36
3.5
3
VOUT = 3.3V
TA = 25°C
3.32
3.28
3.24
3.20
2.5
2
VOUT = 2.0V
TA = - 40°C
1.5
1
0.5
0
0.8
1.2
1.6
2
2.4
2.8
0
1
2
3
4
5
6
7
8
9
10
VIN (V)
IOUT (mA)
FIGURE 2-9:
3.3V VOUT vs. VIN.
FIGURE 2-12:
Threshold vs. IOUT
PWM Pulse Skipping Mode
.
DS22234A-page 6
2010 Microchip Technology Inc.
MCP1640/B/C/D
Note: Unless otherwise indicated, V = EN = 1.2V, C
= C = 10 µF, L = 4.7 µH, V
= 3.3V, I
= 15 mA, T = +25°C.
IN
OUT
IN
OUT
LOAD A
10000
PWM / PFM
PWM ONLY
VOUT = 5.0V
1000
100
10
VOUT = 3.3V
VOUT = 2.0V
VOUT = 3.3V
VOUT = 5.0V
VOUT = 2.0V
0.8 1.1 1.4 1.7
2
2.3 2.6 2.9 3.2 3.5
VIN (V)
FIGURE 2-13:
Input No Load Current vs.
FIGURE 2-16:
MCP1640 3.3V VOUT PFM
VIN.
Mode Waveforms.
5
4
P - Channel
3
2
1
0
N - Channel
1.5
1
2
2.5
3
3.5
4
4.5
5
> VIN or VOUT
FIGURE 2-14:
N-Channel and P-Channel
FIGURE 2-17:
MCP1640B 3.3V VOUT
R
DSON vs. > of VIN or VOUT
.
PWM Mode Waveforms.
16
14
12
10
8
VOUT = 5.0V
VOUT = 3.3V
VOUT = 2.0V
6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
VIN (V)
FIGURE 2-15:
PFM / PWM Threshold
FIGURE 2-18:
MCP1640/B High Load
Current vs. VIN.
Waveforms.
2010 Microchip Technology Inc.
DS22234A-page 7
MCP1640/B/C/D
Note: Unless otherwise indicated, V = EN = 1.2V, C
= C = 10 µF, L = 4.7 µH, V
= 3.3V, I
= 15 mA, T = +25°C.
IN
OUT
IN
OUT
LOAD A
FIGURE 2-19:
3.3V Start-up After Enable.
FIGURE 2-22:
MCP1640B 3.3V VOUT Load
Transient Waveforms.
FIGURE 2-20:
VENABLE
3.3V Start-up when VIN =
FIGURE 2-23:
Transient Waveforms.
MCP1640B 2.0V VOUT Load
.
FIGURE 2-21:
MCP1640 3.3V VOUT Load
FIGURE 2-24:
3.3V VOUT Line Transient
Transient Waveforms.
Waveforms.
DS22234A-page 8
2010 Microchip Technology Inc.
MCP1640/B/C/D
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
MCP1640/B/C/D MCP1640/B/C/D
Pin No.
Description
SOT23
2x3 DFN
SW
1
2
3
4
5
6
5
Switch Node, Boost Inductor Input Pin
GND
EN
Ground Pin
4
1
Enable Control Input Pin
Feedback Voltage Pin
Output Voltage Pin
FB
VOUT
VIN
8
2
3
7
6
9
Input Voltage Pin
SGND
PGND
VOUTS
VOUTP
EP
Signal Ground Pin
Power Ground Pin
Output Voltage Sense Pin
Output Voltage Power Pin
Exposed Thermal Pad (EP); must be connected to VSS.
—
3.1
Switch Node Pin (SW)
3.6
Power Supply Input Voltage Pin
(V )
IN
Connect the inductor from the input voltage to the SW
pin. The SW pin carries inductor current and can be as
high as 800 mA peak. The integrated N-Channel switch
drain and integrated P-Channel switch source are inter-
nally connected at the SW node.
Connect the input voltage source to VIN. The input
source should be decoupled to GND with a 4.7 µF
minimum capacitor.
3.7
Signal Ground Pin (S
)
GND
The signal ground pin is used as a return for the
integrated VREF and error amplifier. In the 2x3 DFN
package, the SGND and power ground (PGND) pins are
connected externally.
3.2
Ground Pin (GND)
The ground or return pin is used for circuit ground con-
nection. Length of trace from input cap return, output
cap return and GND pin should be made as short as
possible to minimize noise on the GND pin. In the
SOT23-6 package, a single ground pin is used.
3.8
Power Ground Pin (P
)
GND
The power ground pin is used as a return for the high-
current N-Channel switch. In the 2x3 DFN package, the
PGND and signal ground (SGND) pins are connected
externally.
3.3
Enable Pin (EN)
The EN pin is a logic-level input used to enable or
disable device switching and lower quiescent current
while disabled. A logic high (>90% of VIN) will enable
the regulator output. A logic low (<20% of VIN) will
ensure that the regulator is disabled.
3.9
Output Voltage Sense Pin (V
)
OUTS
The output voltage sense pin connects the regulated
output voltage to the internal bias circuits. In the 2x3
DFN package, VOUTS and VOUTP are connected
externally.
3.4
Feedback Voltage Pin (FB)
3.10 Output Voltage Power Pin (V
)
OUTP
The FB pin is used to provide output voltage regulation
by using a resistor divider. The FB voltage will be 1.21V
typical with the output voltage in regulation.
The output voltage power pin connects the output volt-
age to the switch node. High current flows through the
integrated P-Channel and out of this pin to the output
capacitor and output. In the 2x3 DFN package, VOUTS
and VOUTP are connected externally.
3.5
Output Voltage Pin (V
)
OUT
The output voltage pin connects the integrated
P-Channel MOSFET to the output capacitor. The FB
voltage divider is also connected to the VOUT pin for
voltage regulation.
3.11 Exposed Thermal Pad (EP)
There is no internal electrical connection between the
Exposed Thermal Pad (EP) and the PGND and SGND
pins. They must be connected to the same potential on
the Printed Circuit Board (PCB).
2010 Microchip Technology Inc.
DS22234A-page 9
MCP1640/B/C/D
NOTES:
DS22234A-page 10
2010 Microchip Technology Inc.
MCP1640/B/C/D
4.1.3
TRUE OUTPUT DISCONNECT
OPTION
4.0
4.1
DETAILED DESCRIPTION
Device Option Overview
The MCP1640/B devices incorporate a true output
disconnect feature. With the EN pin pulled low, the
output of the MCP1640/B is isolated or disconnected
from the input by turning off the integrated P-Channel
switch and removing the switch bulk diode connection.
This removes the DC path typical in boost converters,
which allows the output to be disconnected from the
input. During this mode, less than 1 µA of current is
consumed from the input (battery). True output discon-
nect does not discharge the output; the output voltage
is held up by the external COUT capacitance.
The MCP1640/B/C/D family of devices is capable of
low start-up voltage and delivers high efficiency over a
wide load range for single cell, two cell, three cell
alkaline, NiMH, NiCd and single cell Li-Ion battery
inputs. A high level of integration lowers total system
cost, eases implementation and reduces board area.
The devices feature low start-up voltage, adjustable
output voltage, PWM/PFM mode operation, low IQ,
integrated synchronous switch, internal compensation,
low noise anti-ring control, inrush current limit and soft
start. There are two feature options for the MCP1640/
B/C/D family: PWM/PFM mode or PWM mode only,
and “true output disconnect” or input bypass.
4.1.4
INPUT BYPASS OPTION
The MCP1640C/D devices incorporate the input
bypass shutdown option. With the EN input pulled low,
the output is connected to the input using the internal
P-Channel MOSFET. In this mode, the current draw
from the input (battery) is less than 1 µA with no load.
The Input Bypass mode is used when the input voltage
range is high enough for the load to operate in Sleep or
low IQ mode. When a higher regulated output voltage is
necessary to operate the application, the EN input is
pulled high enabling the boost converter.
4.1.1
PWM/PFM MODE OPTION
The MCP1640/C devices use an automatic switchover
from PWM to PFM mode for light load conditions to
maximize efficiency over a wide range of output
current. During PFM mode, higher peak current is used
to pump the output up to the threshold limit. While
operating in PFM or PWM mode, the P-Channel switch
is used as a synchronous rectifier, turning off when the
inductor current reaches 0 mA to maximize efficiency.
In PFM mode, a comparator is used to terminate
switching when the output voltage reaches the upper
threshold limit. Once switching has terminated, the
output voltage will decay or coast down. During this
period, very low IQ is consumed from the device and
input source, which keeps power efficiency high at light
load. The disadvantages of PWM/PFM mode are
higher output ripple voltage and variable PFM mode
frequency. The PFM mode frequency is a function of
input voltage, output voltage and load. While in PFM
mode, the boost converter pumps the output up at a
switching frequency of 500 kHz.
TABLE 4-1:
PART NUMBER SELECTION
Part
Number
PWM/
PFM
PWM True Dis Bypass
MCP1640
X
X
MCP1640B
MCP1640C
MCP1640D
X
X
X
X
X
X
4.1.2
PWM MODE ONLY OPTION
The MCP1640B/D devices disable PFM mode
switching, and operate only in PWM mode over the
entire load range. During periods of light load opera-
tion, the MCP1640B/D continues to operate at a con-
stant 500 kHz switching frequency keeping the output
ripple voltage lower than PFM mode. During PWM only
mode, the MCP1640B/D P-Channel switch acts as a
synchronous rectifier by turning off to prevent reverse
current flow from the output cap back to the input in
order to keep efficiency high. For noise immunity, the
N-Channel MOSFET current sense is blanked for
approximately 100 ns. With a typical minimum duty
cycle of 100 ns, the MCP1640B/D continues to switch
at a constant frequency under light load conditions.
Figure 2-12 represents the input voltage versus load
current for the pulse skipping threshold in PWM only
mode. At lighter loads, the MCP1640B/D devices begin
to skip pulses.
2010 Microchip Technology Inc.
DS22234A-page 11
MCP1640/B/C/D
Figure 4-1 depicts the functional block diagram of the
MCP1640/B/C/D.
4.2
Functional Description
The MCP1640/B/C/D is a compact, high-efficiency,
fixed frequency, step-up DC-DC converter that
provides an easy-to-use power supply solution for
applications powered by either one-cell, two-cell, or
three-cell alkaline, NiCd, or NiMH, or one-cell Li-Ion or
Li-Polymer batteries.
V
OUT
INTERNAL
BIAS
V
IN
I
ZERO
DIRECTION
CONTROL
SW
EN
SOFT-START
.3V
0V
GATE DRIVE
AND
SHUTDOWN
CONTROL
LOGIC
I
I
LIMIT
SENSE
SLOPE
COMP.
GND
OSCILLATOR
PWM/PFM
LOGIC
1.21V
FB
EA
FIGURE 4-1:
MCP1640/B/C/D Block Diagram.
50% of its nominal value. Once the output voltage
reaches 1.6V, normal closed-loop PWM operation is
initiated.
The MCP1640/B/C/D charges an internal capacitor
with a very weak current source. The voltage on this
capacitor, in turn, slowly ramps the current limit of the
boost switch to its nominal value. The soft-start
capacitor is completely discharged in the event of a
commanded shutdown or a thermal shutdown.
4.2.1
LOW-VOLTAGE START-UP
The MCP1640/B/C/D is capable of starting from a low
input voltage. Start-up voltage is typically 0.65V for a
3.3V output and 1 mA resistive load.
When enabled, the internal start-up logic turns the
rectifying P-Channel switch on until the output
capacitor is charged to a value close to the input
voltage. The rectifying switch is current limited during
this time. After charging the output capacitor to the
input voltage, the device starts switching. If the input
voltage is below 1.6V, the device runs open-loop with a
fixed duty cycle of 70% until the output reaches 1.6V.
During this time, the boost switch current is limited to
There is no undervoltage lockout feature for the
MCP1640/B/C/D. The device will start up at the lowest
possible voltage and run down to the lowest possible
voltage. For typical battery applications, this may result
in “motor-boating” for deeply discharged batteries.
DS22234A-page 12
2010 Microchip Technology Inc.
MCP1640/B/C/D
4.2.2
PWM MODE OPERATION
4.2.6
INTERNAL BIAS
In normal PWM operation, the MCP1640/B/C/D
operates as a fixed frequency, synchronous boost
converter. The switching frequency is internally
maintained with a precision oscillator typically set to
500 kHz. The MCP1640B/D devices will operate in
PWM only mode even during periods of light load
operation. By operating in PWM only mode, the output
ripple remains low and the frequency is constant.
Operating in fixed PWM mode results in lower
efficiency during light load operation (when compared
to PFM mode (MCP1640/C)).
The MCP1640/B/C/D gets its start-up bias from VIN.
Once the output exceeds the input, bias comes from
the output. Therefore, once started, operation is
completely independent of VIN. Operation is only
limited by the output power level and the input source
series resistance. Once started, the output will remain
in regulation down to 0.35V typical with 1 mA output
current for low source impedance inputs.
4.2.7
INTERNAL COMPENSATION
The error amplifier, with its associated compensation
network, completes the closed loop system by
comparing the output voltage to a reference at the
input of the error amplifier, and feeding the amplified
and inverted signal to the control input of the inner
current loop. The compensation network provides
phase leads and lags at appropriate frequencies to
cancel excessive phase lags and leads of the power
circuit. All necessary compensation components and
slope compensation are integrated.
Lossless current sensing converts the peak current sig-
nal to a voltage to sum with the internal slope compen-
sation. This summed signal is compared to the voltage
error amplifier output to provide a peak current control
command for the PWM signal. The slope
compensation is adaptive to the input and output
voltage. Therefore, the converter provides the proper
amount of slope compensation to ensure stability, but is
not excessive, which causes a loss of phase margin.
The peak current limit is set to 800 mA typical.
4.2.8
SHORT CIRCUIT PROTECTION
4.2.3
PFM MODE OPERATION
Unlike most boost converters, the MCP1640/B/C/D
allows its output to be shorted during normal operation.
The internal current limit and overtemperature
protection limit excessive stress and protect the device
during periods of short circuit, overcurrent and over-
temperature. While operating in Bypass mode, the
P-Channel current limit is inhibited to minimize
quiescent current.
The MCP1640/C devices are capable of operating in
normal PWM mode and PFM mode to maintain high
efficiency at all loads. In PFM mode, the output ripple
has a variable frequency component that changes with
the input voltage and output current. With no load, the
quiescent current draw from the output is typically
19 µA. The PFM mode can be disabled in selected
device options.
4.2.9
LOW NOISE OPERATION
PFM operation is initiated if the output load current falls
below an internally programmed threshold. The output
voltage is continuously monitored. When the output
voltage drops below its nominal value, PFM operation
pulses one or several times to bring the output back
into regulation. If the output load current rises above
the upper threshold, the MCP1640/C transitions
smoothly into PWM mode.
The MCP1640/B/C/D integrates a low noise anti-ring
switch that damps the oscillations typically observed at
the switch node of a boost converter when operating in
the discontinuous inductor current mode. This removes
the high frequency radiated noise.
4.2.10
OVERTEMPERATURE
PROTECTION
4.2.4
ADJUSTABLE OUTPUT VOLTAGE
Overtemperature protection circuitry is integrated in the
MCP1640/B/C/D. This circuitry monitors the device
junction temperature and shuts the device off if the
junction temperature exceeds the typical +150oC
threshold. If this threshold is exceeded, the device will
automatically restart once the junction temperature
drops by 10oC. The soft start is reset during an
overtemperature condition.
The MCP1640/B/C/D output voltage is adjustable with
a resistor divider over a 2.0V minimum to 5.5V
maximum range. High value resistors are
recommended to minimize quiescent current to keep
efficiency high at light loads.
4.2.5
ENABLE
The enable pin is used to turn the boost converter on
and off. The enable threshold voltage varies with input
voltage. To enable the boost converter, the EN voltage
level must be greater than 90% of the VIN voltage. To
disable the boost converter, the EN voltage must be
less than 20% of the VIN voltage.
2010 Microchip Technology Inc.
DS22234A-page 13
MCP1640/B/C/D
NOTES:
DS22234A-page 14
2010 Microchip Technology Inc.
MCP1640/B/C/D
5.3
Input Capacitor Selection
5.0
5.1
APPLICATION INFORMATION
Typical Applications
The boost input current is smoothed by the boost
inductor reducing the amount of filtering necessary at
the input. Some capacitance is recommended to
provide decoupling from the source. Low ESR X5R or
X7R are well suited since they have a low temperature
coefficient and small size. For most applications,
4.7 µF of capacitance is sufficient at the input. For high
power applications that have high source impedance or
long leads, connecting the battery to the input 10 µF of
capacitance is recommended. Additional input
capacitance can be added to provide a stable input
voltage.
The MCP1640/B/C/D synchronous boost regulator
operates over a wide input voltage and output voltage
range. The power efficiency is high for several decades
of load range. Output current capability increases with
input voltage and decreases with increasing output
voltage. The maximum output current is based on the
N-Channel peak current limit. Typical characterization
curves in this data sheet are presented to display the
typical output current capability.
Table 5-1 contains the recommended range for the
input capacitor value.
5.2
Adjustable Output Voltage
Calculations
To calculate the resistor divider values for the
MCP1640/B/C/D, the following equation can be used.
Where RTOP is connected to VOUT, RBOT is connected
to GND and both are connected to the FB input pin.
5.4
Output Capacitor Selection
The output capacitor helps provide a stable output
voltage during sudden load transients and reduces the
output voltage ripple. As with the input capacitor, X5R
and X7R ceramic capacitors are well suited for this
application.
EQUATION 5-1:
VOUT
The MCP1640/B/C/D is internally compensated so
output capacitance range is limited. See Table 5-1 for
the recommended output capacitor range.
– 1
------------
RTOP = RBOT
VFB
While the N-Channel switch is on, the output current is
supplied by the output capacitor COUT. The amount of
output capacitance and equivalent series resistance
will have a significant effect on the output ripple
voltage. While COUT provides load current, a voltage
drop also appears across its internal ESR that results
in ripple voltage.
Example A:
VOUT = 3.3V
VFB = 1.21V
RBOT = 309 k
RTOP = 533.7 k (Standard Value = 536 k)
Example B:
EQUATION 5-2:
VOUT = 5.0V
VFB = 1.21V
dV
dt
IOUT = COUT ------
RBOT = 309 k
RTOP = 967.9 k (Standard Value = 976 k)
Where dV represents the ripple voltage and dt
represents the ON time of the N-Channel switch (D * 1/
FSW).
There are some potential issues with higher value
resistors. For small surface mount resistors,
environment contamination can create leakage paths
that significantly change the resistor divider that effect
the output voltage. The FB input leakage current can
also impact the divider and change the output voltage
tolerance.
Table 5-1 contains the recommended range for the
input and output capacitor value.
TABLE 5-1:
CAPACITOR VALUE RANGE
CIN
COUT
Min
4.7 µF
none
10 µF
Max
100 µF
2010 Microchip Technology Inc.
DS22234A-page 15
MCP1640/B/C/D
Peak current is the maximum or limit, and saturation
current typically specifies a point at which the induc-
tance has rolled off a percentage of the rated value.
This can range from a 20% to 40% reduction in induc-
tance. As inductance rolls off, the inductor ripple cur-
rent increases as does the peak switch current. It is
important to keep the inductance from rolling off too
much, causing switch current to reach the peak limit.
5.5
Inductor Selection
The MCP1640/B/C/D is designed to be used with small
surface mount inductors; the inductance value can
range from 2.2 µH to 10 µH. An inductance value of
4.7 µH is recommended to achieve a good balance
between inductor size, converter load transient
response and minimized noise.
TABLE 5-2:
MCP1640/B/C/D
RECOMMENDED INDUCTORS
5.6
Thermal Calculations
The MCP1640/B/C/D is available in two different
packages (SOT23-6 and 2x3 DFN8). By calculating the
power dissipation and applying the package thermal
resistance, (JA), the junction temperature is esti-
mated. The maximum continuous junction temperature
rating for the MCP1640/B/C/D is +125oC.
Part
Number
Value
DCR
ISAT
Size
(µH) (typ) (A) WxLxH (mm)
Coiltronics®
SD3110
SD3112
SD3114
SD3118
SD3812
SD25
4.7
4.7
4.7
4.7
4.7
4.7
0.285 0.68
0.246 0.80
0.251 1.14
0.162 1.31
0.256 1.13
0.0467 1.83
3.1x3.1x1.0
3.1x3.1x1.2
3.1x3.1x1.4
3.8x3.8x1.2
3.8x3.8x1.2
5.0x5.0x2.5
To quickly estimate the internal power dissipation for
the switching boost regulator, an empirical calculation
using measured efficiency can be used. Given the
measured efficiency, the internal power dissipation is
estimated by Equation 5-3.
DCR
ISAT
(max)
Part
Number
Value
(µH)
Size
EQUATION 5-3:
(A) WxLxH (mm)
Wurth Elektronik®
VOUT IOUT
------------------------------ – VOUT IOUT = PDis
WE-TPC
Type TH
4.7
4.7
4.7
4.7
0.200
0.8
2.8x2.8x1.35
Efficiency
WE-TPC
Type S
0.105 0.90 3.8x3.8x1.65
The difference between the first term, input power, and
the second term, power delivered, is the internal
MCP1640/B/C/D power dissipation. This is an estimate
assuming that most of the power lost is internal to the
MCP1640/B/C/D and not CIN, COUT and the inductor.
There is some percentage of power lost in the boost
inductor, with very little loss in the input and output
capacitors. For a more accurate estimation of internal
power dissipation, subtract the IINRMS2*LESR power
dissipation.
WE-TPC
Type M
0.082 1.65
0.046 2.00
4.8x4.8x1.8
6.8x6.8x2.3
WE-TPC
Type X
DCR
ISAT
(max)
Part
Number
Value
(µH)
Size
(A) WxLxH (mm)
Sumida®
CMH23
4.7
4.7
4.7
0.537 0.70
0.216 0.75
2.3x2.3x1.0
3.5x4.3x0.8
5.7
PCB Layout Information
CMD4D06
CDRH4D
EPCOS®
0.09 0.800 4.6x4.6x1.5
Good printed circuit board layout techniques are
important to any switching circuitry and switching
power supplies are no different. When wiring the
switching high current paths, short and wide traces
should be used. Therefore it is important that the input
and output capacitors be placed as close as possible to
the MCP1640/B/C/D to minimize the loop area.
B82462A2
472M000
4.7
4.7
0.084 2.00
0.04 1.8
6.0x6.0x2.5
6.3x6.3x3.0
B82462G4
472M
Several parameters are used to select the correct
inductor: maximum rated current, saturation current
and copper resistance (ESR). For boost converters, the
inductor current can be much higher than the output
current. The lower the inductor ESR, the higher the
efficiency of the converter, a common trade-off in size
versus efficiency.
The feedback resistors and feedback signal should be
routed away from the switching node and the switching
current loop. When possible, ground planes and traces
should be used to help shield the feedback signal and
minimize noise and magnetic interference.
DS22234A-page 16
2010 Microchip Technology Inc.
MCP1640/B/C/D
Via to GND Plane
RBOT RTOP
+V
+V
OUT
IN
CIN
COUT
L
MCP1640
1
GND
GND
Via for Enable
FIGURE 5-1:
MCP1640/B/C/D SOT23-6 Recommended Layout.
Wired on Bottom
Plane
L
+V
IN
+V
OUT
CIN
COUT
GND
MCP1640
RTOP
1
RBOT
Enable
GND
FIGURE 5-2:
MCP1640/B/C/D DFN-8 Recommended Layout.
2010 Microchip Technology Inc.
DS22234A-page 17
MCP1640/B/C/D
NOTES:
DS22234A-page 18
2010 Microchip Technology Inc.
MCP1640/B/C/D
6.0
TYPICAL APPLICATION CIRCUITS
L1
4.7 µH
VOUT
MANGANESE LITHIUM
DIOXIDE BUTTON CELL
5.0V @ 5 mA
SW
V
OUT
V
IN
976 K
+
COUT
10 µF
CIN
2.0V TO 3.2V
V
4.7 µF
FB
EN
-
309 K
®
GND
FROM PIC MCU I/O
Note:
For applications that can operate directly from the battery input voltage during Sleep mode and
require a higher voltage during normal run mode, the MCP1640C device provides input to output
bypass when disabled. The PIC Microcontroller is powered by the output of the MCP1640C. One
of its I/O pins is used to enable and disable the MCP1640C to control its bias voltage. While
operating in Sleep mode, the MCP1640C input quiescent current is typically less than 1 uA.
FIGURE 6-1:
Manganese Lithium Coin Cell Application using Bypass Mode.
L1
10 µH
VOUT
VIN
5.0V @ 350 mA
SW
V
3.3V To 4.2V
OUTS
V
IN
V
OUTP
976 K
COUT
10 µF
CIN
10 µF
+
V
FB
EN
309 K
P
S
-
GND
GND
FIGURE 6-2:
USB On-The-Go Powered by Li-Ion.
2010 Microchip Technology Inc.
DS22234A-page 19
MCP1640/B/C/D
NOTES:
DS22234A-page 20
2010 Microchip Technology Inc.
MCP1640/B/C/D
7.0
7.1
PACKAGING INFORMATION
Package Marking Information (Not to Scale)
6-Lead SOT-23
Example
XXNN
BZNN
8-Lead DFN
Example
XXX
YWW
NN
AHM
945
25
Legend: XX...X Customer-specific information
Y
YY
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
WW
NNN
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
*
3
e
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2010 Microchip Technology Inc.
DS22234A-page 21
MCP1640/B/C/D
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ꢎꢃꢉꢌꢆꢉꢋꢃꢍ ꢖꢄꢉꢋꢅꢆꢊꢆꢒꢗ ꢂꢌꢈ.ꢃꢅꢒ +ꢏꢕꢞꢏꢐ<*
DS22234A-page 22
2010 Microchip Technology Inc.
MCP1640/B/C/D
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2010 Microchip Technology Inc.
DS22234A-page 23
MCP1640/B/C/D
!ꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆ"ꢐꢄꢈꢆ#ꢈꢄꢊ$ꢆꢝꢔꢆꢂꢃꢄꢅꢆꢇꢄꢌ%ꢄ&ꢃꢆꢕ'ꢖꢘꢆMꢆꢚ)ꢛ)*+,ꢆꢎꢎꢆ-ꢔꢅ.ꢆꢙ"#ꢝꢜ
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ꢋ$$ꢍ,33...ꢁ ꢃꢉꢌꢆꢉꢋꢃꢍꢁꢉꢆ 3ꢍꢈꢉ0ꢈꢒꢃꢅꢒ
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ꢐꢁ 2ꢈꢉ0ꢈꢒꢄꢇ ꢈꢗꢇꢋꢈ-ꢄꢇꢆꢅꢄꢇꢆꢌꢇ ꢆꢌꢄꢇꢄ'ꢍꢆ!ꢄ"ꢇ$ꢃꢄꢇ9ꢈꢌ!ꢇꢈ$ꢇꢄꢅ"!ꢁ
ꢜꢁ 2ꢈꢉ0ꢈꢒꢄꢇꢃ!ꢇ!ꢈ.ꢇ!ꢃꢅꢒ%ꢊꢈ$ꢄ"ꢁ
ꢕꢁ ꢂꢃ ꢄꢅ!ꢃꢆꢅꢃꢅꢒꢇꢈꢅ"ꢇ$ꢆꢊꢄꢌꢈꢅꢉꢃꢅꢒꢇꢍꢄꢌꢇꢓꢔꢎ#ꢇ(ꢀꢕꢁ)ꢎꢁ
*ꢔ+, *ꢈ!ꢃꢉꢇꢂꢃ ꢄꢅ!ꢃꢆꢅꢁꢇꢖꢋꢄꢆꢌꢄ$ꢃꢉꢈꢊꢊꢗꢇꢄ'ꢈꢉ$ꢇ-ꢈꢊ%ꢄꢇ!ꢋꢆ.ꢅꢇ.ꢃ$ꢋꢆ%$ꢇ$ꢆꢊꢄꢌꢈꢅꢉꢄ!ꢁ
ꢙ#/, ꢙꢄ&ꢄꢌꢄꢅꢉꢄꢇꢂꢃ ꢄꢅ!ꢃꢆꢅ1ꢇ%!%ꢈꢊꢊꢗꢇ.ꢃ$ꢋꢆ%$ꢇ$ꢆꢊꢄꢌꢈꢅꢉꢄ1ꢇ&ꢆꢌꢇꢃꢅ&ꢆꢌ ꢈ$ꢃꢆꢅꢇꢍ%ꢌꢍꢆ!ꢄ!ꢇꢆꢅꢊꢗꢁ
ꢎꢃꢉꢌꢆꢉꢋꢃꢍ ꢖꢄꢉꢋꢅꢆꢊꢆꢒꢗ ꢂꢌꢈ.ꢃꢅꢒ +ꢏꢕꢞꢀꢐꢜ+
DS22234A-page 24
2010 Microchip Technology Inc.
MCP1640/B/C/D
!ꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆ"ꢐꢄꢈꢆ#ꢈꢄꢊ$ꢆꢝꢔꢆꢂꢃꢄꢅꢆꢇꢄꢌ%ꢄ&ꢃꢆꢕ'ꢖꢘꢆMꢆꢚ)ꢛ)*+,ꢆꢎꢎꢆ-ꢔꢅ.ꢆꢙ"#ꢝꢜ
ꢝꢔꢊꢃ /ꢆꢌꢇ$ꢋꢄꢇ ꢆ!$ꢇꢉ%ꢌꢌꢄꢅ$ꢇꢍꢈꢉ0ꢈꢒꢄꢇ"ꢌꢈ.ꢃꢅꢒ!1ꢇꢍꢊꢄꢈ!ꢄꢇ!ꢄꢄꢇ$ꢋꢄꢇꢎꢃꢉꢌꢆꢉꢋꢃꢍꢇ2ꢈꢉ0ꢈꢒꢃꢅꢒꢇꢔꢍꢄꢉꢃ&ꢃꢉꢈ$ꢃꢆꢅꢇꢊꢆꢉꢈ$ꢄ"ꢇꢈ$ꢇ
ꢋ$$ꢍ,33...ꢁ ꢃꢉꢌꢆꢉꢋꢃꢍꢁꢉꢆ 3ꢍꢈꢉ0ꢈꢒꢃꢅꢒ
2010 Microchip Technology Inc.
DS22234A-page 25
MCP1640/B/C/D
NOTES:
DS22234A-page 26
2010 Microchip Technology Inc.
MCP1640/B/C/D
APPENDIX A: REVISION HISTORY
Revision A (February 2010)
• Original Release of this Document.
2010 Microchip Technology Inc.
DS22234A-page 27
MCP1640/B/C/D
NOTES:
DS22234A-page 28
2010 Microchip Technology Inc.
MCP1640/B/C/D
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
X
PART NO.
Device
X
/XX
Examples:
Tape
and Reel
Temperature
Range
Package
a)
MCP1640-I/MC:
0.65V, Sync Reg.,
8LD-DFN pkg.
b)
MCP1640T-I/MC:
Tape and Reel,
0.65V, Sync Reg.,
8LD-DFN pkg.
Device
MCP1640:
0.65V, PWM/PFM True Disconnect,
Sync Boost Regulator
MCP1640T: 0.65V, PWM/PFM True Disconnect,
Sync Boost Regulator (Tape and Reel)
MCP1640B: 0.65V, PWM Only True Disconnect,
Sync Boost Regulator
MCP1640BT: 0.65V, PWM Only True Disconnect,
Sync Boost Regulator (Tape and Reel)
c)
d)
MCP1640B-I/MC:
0.65V, Sync Reg.,
8LD-DFN pkg.
MCP1640BT-I/MC: Tape and Reel,
0.65V, Sync Reg.,
8LD-DFN pkg.
MCP1640C: 0.65V, PWM/PFM Input to Output Bypass,
Sync Boost Regulator
MCP1640CT: 0.65V, PWM/PFM Input to Output Bypass,
Sync Boost Regulator (Tape and Reel)
MCP1640D: 0.65V, PWM Only Input to Output Bypass,
Sync Boost Regulator
MCP1640DT: 0.65V, PWM Only Input to Output Bypass,
Sync Boost Regulator (Tape and Reel)
e)
f)
MCP1640C-I/MC:
0.65V, Sync Reg.,
8LD-DFN pkg.
MCP1640CT-I/MC: Tape and Reel,
0.65V, Sync Reg.,
8LD-DFN pkg.
g)
h)
MCP1640D-I/MC::
0.65V, Sync Reg.,
8LD-DFN pkg.
MCP1640DT-I/MC:: Tape and Reel,
0.65V, Sync Reg.,
Temperature Range
Package
I
= -40C to +85C (Industrial)
8LD-DFN pkg.
CH
MC
=
=
Plastic Small Outline Transistor (SOT-23), 6-lead
Plastic Dual Flat, No Lead (2x3 DFN), 8-lead
i)
MCP1640T-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
j)
MCP1640BT-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
k)
l)
MCP1640CT-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
MCP1640DT-I/CHY: Tape and Reel,
0.65V, Sync Reg.,
6LD SOT-23 pkg.
2010 Microchip Technology Inc.
DS22234A-page 29
MCP1640/B/C/D
NOTES:
DS22234A-page 30
2010 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
rfPIC and UNI/O are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
32
PICtail, PIC logo, REAL ICE, rfLAB, Select Mode, Total
Endurance, TSHARC, UniWinDriver, WiperLock and ZENA
are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2010, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-60932-019-5
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
2010 Microchip Technology Inc.
DS22234A-page 31
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Boston
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Seoul
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Cleveland
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Detroit
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-6578-300
Fax: 886-3-6578-370
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Santa Clara
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
01/05/10
DS22234A-page 32
2010 Microchip Technology Inc.
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