MCP1700-2802E/TT_技术文档

MCP1700

Low Quiescent Current LDO

Features:

General Description:

• 1.6 µA Typical Quiescent Current

The MCP1700 is a family of CMOS low dropout (LDO)

voltage regulators that can deliver up to 250 mA of

current while consuming only 1.6 µA of quiescent

current (typical). The input operating range is specified

from 2.3V to 6.0V, making it an ideal choice for two and

three primary cell battery-powered applications, as well

as single cell Li-Ion-powered applications.

• Input Operating Voltage Range: 2.3V to 6.0V

• Output Voltage Range: 1.2V to 5.0V

• 250 mA Output Current for Output

Voltages  2.5V

• 200 mA Output Current for Output

Voltages < 2.5V

The MCP1700 is capable of delivering 250 mA with

only 178 mV of input to output voltage differential

(V_OUT= 2.8V). The output voltage tolerance of the

MCP1700 is typically ±0.4% at +25°C and ±3%

maximum over the operating junction temperature

range of -40°C to +125°C.

• Low Dropout (LDO) Voltage

- 178 mV typical @ 250 mA for V_OUT= 2.8V

• 0.4% Typical Output Voltage Tolerance

• Standard Output Voltage Options:

- 1.2V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 5.0V

• Stable with 1.0 µF Ceramic Output Capacitor

• Short Circuit Protection

Output voltages available for the MCP1700 range from

1.2V to 5.0V. The LDO output is stable when using only

1 µF output capacitance. Ceramic, tantalum or

aluminum electrolytic capacitors can all be used for

input and output. Overcurrent limit and overtemperature

shutdown provide a robust solution for any application.

• Overtemperature Protection

Applications:

• Battery-Powered Devices

• Battery-Powered Alarm Circuits

• Smoke Detectors

Package options include SOT-23, SOT-89, TO-92 and

2x2 DFN-6.

Package Types

• CO₂Detectors

• Pagers and Cellular Phones

• Smart Battery Packs

• Low Quiescent Current Voltage Reference

• PDAs

3-Pin SOT-23

3-Pin SOT-89

V_IN

3

V_IN

MCP1700

• Digital Cameras

MCP1700

• Microcontroller Power

2

1

3

1

2

GND V_INV_OUT

GND V_OUT

Related Literature:

3-Pin TO-92

2x2 DFN-6*

• AN765, “Using Microchip’s Micropower LDOs”

(DS00765), Microchip Technology Inc., 2002

V

IN

V

OUT

1

2

6

• AN766, “Pin-Compatible CMOS Upgrades to

BiPolar LDOs” (DS00766),

Microchip Technology Inc., 2002

MCP1700

EP

7

NC

5

4

NC

1

2 3

3

GND

• AN792, “A Method to Determine How Much

Power a SOT23 Can Dissipate in an Application”

(DS00792), Microchip Technology Inc., 2001

GND V_INV_OUT

* Includes Exposed Thermal Pad (EP); see Table 3-1.

 2005-2013 Microchip Technology Inc.

DS20001826C-page 1

MCP1700

Functional Block Diagrams

MCP1700

V_OUT

V_IN

Error Amplifier

+V_IN

Voltage

Reference

-

+

Overcurrent

Overtemperature

GND

Typical Application Circuits

MCP1700

V_IN

GND

(2.3V to 3.2V)

V_OUT

1.8V

V_IN

C_IN

V_OUT

1 µF Ceramic

I_OUT

150 mA

C_OUT

1 µF Ceramic

DS20001826C-page 2

 2005-2013 Microchip Technology Inc.

MCP1700

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

V

............................................................................................+6.5V

DD

All inputs and outputs w.r.t. ......... (V - 0.3V) to (V + 0.3V)

SS

IN

Peak Output Current ....................................Internally Limited

Storage temperature .....................................-65°C to +150°C

Maximum Junction Temperature................................... 150°C

Operating Junction Temperature...................-40°C to +125°C

ESD protection on all pins (HBM;MM)  4 kV;  400V

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise specified, all limits are established for V = V + 1V, I

= 100 µA,

IN

R

LOAD

C

= 1 µF (X7R), C = 1 µF (X7R), T = +25°C.

OUT

IN A

Boldface type applies for junction temperatures, T (Note 6) of -40°C to +125°C.

J

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input / Output Characteristics

Input Operating

Voltage

V

I

2.3

—

6.0

4

V

Note 1

IN

Input Quiescent

Current

—

1.6

µA

mA

I = 0 mA, V = V + 1V

q

L

IN

R

Maximum Output

Current

I

250

200

—

For V  2.5V

OUT_mA

R

For V  2.5V

R

Output Short

I

—

408

—

V

= V + 1V, V

= GND

OUT

OUT_SC

IN

R

Circuit Current

Current (peak current) measured 10 ms

after short is applied.

Output Voltage

Regulation

V

- 3.0%

- 2.0%

V

± 0.4%

50

V

+ 3.0%

+ 2.0%

V

ppm/°C

%/V

Note 2

OUT

R

V

Temperature

TCV

—

Note 3

OUT

Coefficient

Line Regulation

V

/

-1.0

-1.5

±0.75

±1.0

+1.0

+1.5

(V + 1)V  V  6V

OUT

XV )

IN

R

IN

(V

OUT

Load Regulation

V

/V

%

I = 0.1 mA to 250 mA for V  2.5V

L R

OUT OUT

I = 0.1 mA to 200 mA for V  2.5V

L

R

Note 4

Dropout Voltage

V

- V

—

178

150

500

350

—

mV

µs

I = 250 mA, (Note 1, Note 5)

L

IN

OUT

V

 2.5V

R

Dropout Voltage

 2.5V

I = 200 mA, (Note 1, Note 5)

L

IN

V

R

Output Rise Time

T

10% V to 90% V

V

= 0V to 6V,

R

IN

R = 50 resistive

L

Note 1: The minimum V must meet two conditions: V  2.3V and V  V + 3.0%  V .

DROPOUT

IN

R

2:

V is the nominal regulator output voltage. For example: V = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The

R

input voltage V = V + 1.0V; I

= 100 µA.

IN

R

OUT

6

3: TCV

= (V

- V

) *10 / (V * Temperature), V

= highest voltage measured over the

OUT-HIGH

OUT

OUT-HIGH

OUT-LOW

R

temperature range. V

= lowest voltage measured over the temperature range.

OUT-LOW

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV

.

OUT

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with a V + 1V differential applied.

R

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T , T ,  ). Exceeding the maximum allowable power

A

J

JA

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the

ambient temperature is not significant.

 2005-2013 Microchip Technology Inc.

DS20001826C-page 3

MCP1700

DC CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise specified, all limits are established for V = V + 1V, I = 100 µA,

IN

R

LOAD

C

= 1 µF (X7R), C = 1 µF (X7R), T = +25°C.

IN A

OUT

Boldface type applies for junction temperatures, T (Note 6) of -40°C to +125°C.

J

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

I = 100 mA, f = 1 kHz, C = 1 µF

OUT

1/2

Output Noise

e

—

3

—

µV/(Hz)

dB

N

L

Power Supply

Ripple Rejection

Ratio

PSRR

44

f = 100 Hz, C

= 1 µF, I = 50 mA,

OUT L

V

= 100 mV pk-pk, C = 0 µF,

= 1.2V

INAC

IN

R

Thermal

T

—

140

—

°C

V

= V + 1V, I = 100 µA

SD

IN

R

L

Shutdown

Protection

Note 1: The minimum V must meet two conditions: V  2.3V and V  V + 3.0%  V

.

IN

R

DROPOUT

2:

V is the nominal regulator output voltage. For example: V = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The

R

input voltage V = V + 1.0V; I

= 100 µA.

IN

R

OUT

6

3: TCV

= (V

- V

) *10 / (V * Temperature), V

= highest voltage measured over the

OUT-HIGH

OUT

OUT-HIGH

OUT-LOW

R

temperature range. V

= lowest voltage measured over the temperature range.

OUT-LOW

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV

.

OUT

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with a V + 1V differential applied.

R

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T , T ,  ). Exceeding the maximum allowable power

A

J

JA

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the

ambient temperature is not significant.

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise specified, all limits are established for V = V + 1V, I

= 100 µA,

IN

R

LOAD

C

= 1 µF (X7R), C = 1 µF (X7R), T = +25°C.

OUT

IN A

Boldface type applies for junction temperatures, T (Note 1) of -40°C to +125°C.

J

Parameters

Temperature Ranges

Sym.

Min.

Typ.

Max.

Units

Conditions

Specified Temperature Range

Operating Temperature Range

Storage Temperature Range

Thermal Package Resistance

Thermal Resistance, 2x2 DFN

T

-40

-65

+125

+150

°C

A

T

J

T

A

®

_JA

_JC

_JA

_JC

_JA

_JC

_JA

_JC

—

91

19

—

°C/W

EIA/JEDEC JESD51-7

FR-4 0.063 4-Layer Board

Thermal Resistance, SOT-23

Thermal Resistance, SOT-89

Thermal Resistance, TO-92

336

110

180

52

EIA/JEDEC JESD51-7

FR-4 0.063 4-Layer Board

EIA/JEDEC JESD51-7

FR-4 0.063 4-Layer Board

160

66.3

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T , T ,  ). Exceeding the maximum allowable power

A

J

JA

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

DS20001826C-page 4

 2005-2013 Microchip Technology Inc.

MCP1700

2.0

TYPICAL PERFORMANCE CURVES

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated: V_R= 1.8V, C_OUT= 1 µF Ceramic (X7R), C_IN= 1 µF Ceramic (X7R), I_L= 100 µA,

T_A= +25°C, V_IN= V_R+ 1V.

Note: Junction Temperature (T ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction

J

temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.

1.208

1.206

1.204

1.202

1.200

1.198

1.196

1.194

1.192

1.190

3.0

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

V_R= 1.2V

I_OUT= 0.1 mA

I_OUT= 0 µA

T_J= +125°C

T_J= +25°C

T_J= +125°C

T_J= - 40°C

T_J= +25°C

T_J= - 40°C

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Input Voltage (V)

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Input Voltage (V)

FIGURE 2-1:

Input Quiescent Current vs.

FIGURE 2-4:

Output Voltage vs. Input

Input Voltage.

Voltage (V_R= 1.2V).

50

45

1.800

1.795

1.790

T_J= - 40°C

1.785

V_R= 2.8V

V_R= 1.8V

T_J= +125°C

I_OUT= 0.1 mA

40

35

30

25

20

15

10

5

T_J= +25°C

T_J= - 40°C

T_J= +125°C

1.780

1.775

1.770

T_J= +25°C

0

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Input Voltage (V)

0

25 50 75 100 125 150 175 200 225 250

Load Current (mA)

FIGURE 2-2:

Ground Current vs. Load

FIGURE 2-5:

Output Voltage vs. Input

Current.

Voltage (V_R= 1.8V).

2.800

2.798

2.796

2.794

2.792

2.790

2.50

2.25

2.00

1.75

1.50

1.25

V_IN= V_R+ 1V

I_OUT= 0 µA

V_R= 2.8V

I_OUT= 0.1 mA

T_J= +25°C

V_R= 5.0V

T_J= - 40°C

V_R= 1.2V

2.788

2.786

2.784

2.782

2.780

2.778

T_J= +125°C

V_R= 2.8V

-40 -25 -10

5

20 35 50 65 80 95 110 125

Junction Temperature (°C)

3.3

3.6

3.9

4.2

4.5

4.8

5.1

5.4

5.7

6.0

Input Voltage (V)

FIGURE 2-3:

Quiescent Current vs.

FIGURE 2-6:

Output Voltage vs. Input

Junction Temperature.

Voltage (V_R= 2.8V).

 2005-2013 Microchip Technology Inc.

DS20001826C-page 5

MCP1700

Note: Unless otherwise indicated: V_R= 1.8V, C_OUT= 1 µF Ceramic (X7R), C_IN= 1 µF Ceramic (X7R), I_L= 100 µA,

T_A= +25°C, V_IN= V_R+ 1V.

T_J= +25°C

5.000

4.995

4.990

4.985

4.980

4.975

4.970

4.965

4.960

4.955

2.798

2.796

2.794

2.792

2.790

2.788

2.786

2.784

2.782

2.780

2.778

V_R= 5.0V

T_J= +25°C

T_J= - 40°C

I

_OUT= 0.1 mA

V_R= 2.8V

_IN= V_R+ 1V

V

T_J= - 40°C

T_J= +125°C

5.0

5.2

5.4

5.6

5.8

6.0

0

50

100

150

200

250

Load Current (mA)

Input Voltage (V)

FIGURE 2-7:

Output Voltage vs. Input

FIGURE 2-10:

Output Voltage vs. Load

Voltage (V_R= 5.0V).

Current (V_R= 2.8V).

1.21

1.20

1.19

1.18

1.17

1.16

1.15

5.000

V_R= 1.2V

T_J= - 40°C

T_J= +25°C

4.995

4.990

4.985

4.980

4.975

4.970

4.965

4.960

4.955

V_IN= V_R+ 1V

T_J= - 40°C

V_R= 5.0V

V_IN= V_R+ 1V

T

_J

= +125°C

T_J= +125°C

0

25

50

75 100 125 150 175 200

Load Current (mA)

0

50

100

150

200

250

Load Current (mA)

FIGURE 2-8:

Output Voltage vs. Load

FIGURE 2-11:

Output Voltage vs. Load

Current (V_R= 1.2V).

Current (V_R= 5.0V).

0.25

1.792

1.790

V_R= 2.8V

0.20

0.15

0.10

0.05

0.00

T_J= +125°C

T_J= +25°C

1.788

T_J= - 40°C

1.786

1.784

T_J= +125°C

T_J= - 40°C

1.782

V_R= 1.8V

V_IN= V_R+ 1V

1.780

1.778

0

25 50 75 100 125 150 175 200 225 250

Load Current (mA)

0

25

50

75 100 125 150 175 200

Load Current (mA)

FIGURE 2-9:

Output Voltage vs. Load

FIGURE 2-12:

Dropout Voltage vs. Load

Current (V_R= 1.8V).

Current (V_R= 2.8V).

DS20001826C-page 6

 2005-2013 Microchip Technology Inc.

MCP1700

Note: Unless otherwise indicated: V_R= 1.8V, C_OUT= 1 µF Ceramic (X7R), C_IN= 1 µF Ceramic (X7R), I_L= 100 µA,

T_A= +25°C, V_IN= V_R+ 1V.

0.16

10.00

V_IN= 3.8V

V_R= 2.8V

V_R= 5.0V

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

I_OUT= 50 mA

T_J= +125°C

T_J= - 40°C

V_IN= 2.5V

V_R= 1.2V

V_IN= 2.8V

V_R= 1.8V

1.00

0.10

0.01

T_J= +25°C

I_OUT= 50 mA I_OUT= 50 mA

0.01

0.1

1

10

100

1000

0

25 50 75 100 125 150 175 200 225 250

Load Current (mA)

Frequency (kHz)

FIGURE 2-13:

Current (V_R= 5.0V).

Dropout Voltage vs. Load

FIGURE 2-16:

V_IN= 2.2V

Noise vs. Frequency.

+20

+10

C_IN= 1µF Ceramic

C_OUT= 1µF Ceramic

0

-10

-20

-30

-40

-50

-60

-70

V_R= 1.2V

I = 100 mA

Load

Step

0.01

0.10

1.00

10.0

Frequency (KHz)

100

1000

FIGURE 2-14:

Power Supply Ripple

FIGURE 2-17:

Dynamic Load Step

Rejection vs. Frequency (V_R= 1.2V).

(V_R= 1.2V).

+20

+10

0

V_IN= 2.8V

C_IN= 1µF Ceramic

C_OUT= 1µF Ceramic

-10

-20

-30

-40

-50

-60

V

_R= 1.8V

I = 100 mA

Load

Step

0.01

10.00

1ꢀꢁꢁ

Frequency (KHz)

100

1000

FIGURE 2-15:

Power Supply Ripple

FIGURE 2-18:

Dynamic Load Step

Rejection vs. Frequency (V_R= 2.8V).

(V_R= 1.8V).

 2005-2013 Microchip Technology Inc.

DS20001826C-page 7

MCP1700

Note: Unless otherwise indicated: V_R= 1.8V, C_OUT= 1 µF Ceramic (X7R), C_IN= µF Ceramic (X7R), I_L= 100 µA,

T_A= +25°C, V_IN= V_R+ 1V.

V_IN= 6V

C

_IN= 1 µF Ceramic

V_IN= 3.8V

V_R= 2.8V

C_OUT= 22 µF (1 ESR)

V_R= 5V

C_IN= 1µF Ceramic

_OUT= 1µF Ceramic

C

I = 100 mA

Load

Step

I_OUT= 200 mA

Load Step

FIGURE 2-19:

Dynamic Load Step

FIGURE 2-22:

Dynamic Load Step

(V_R= 2.8V).

(V_R= 5.0V).

V_IN= 3.8V to

4.8V

V_IN= 2.8V

V_R= 1.8V

C_IN= 1 µF Ceramic

C_OUT= 22 µF (1 ESR)

C_OUT= 1 µF Ceramic

V

_R= 2.8V

I

_OUT= 200 mA

I_OUT

100 mA

Load Step

FIGURE 2-20:

Dynamic Load Step

FIGURE 2-23:

Dynamic Line Step

(V_R= 1.8V).

(V_R= 2.8V).

V_IN= 0V to

2.2V

V_IN= 3.8V

V_R= 2.8V

C

_OUT= 1 µF Ceramic

C_IN= 1 µF Ceramic

R_LOAD= 25

C_OUT= 22 µF (1 ESR)

V

_R= 1.2V

I_OUT= 200 mA

Load Step

FIGURE 2-21:

Dynamic Load Step

FIGURE 2-24:

Start-up from V_IN

(V_R= 2.8V).

(V_R= 1.2V).

DS20001826C-page 8

 2005-2013 Microchip Technology Inc.

MCP1700

Note: Unless otherwise indicated: V_R= 1.8V, C_OUT= 1 µF Ceramic (X7R), C_IN= 1 µF Ceramic (X7R), I_L= 100 µA,

T_A= +25°C, V_IN= V_R+ 1V.

V_IN= 0V to

2.8V

0.0

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

C_OUT= 1 µF Ceramic

R_LOAD= 25

V_R= 2.8V

I_OUT= 0 to 250 mA

V_IN= 5.0V

V_IN= 4.3V

V_IN= 3.3V

V

_R= 1.8V

-40 -25 -10

5

20 35 50 65 80 95 110 125

Junction Temperature (°C)

FIGURE 2-25:

Start-up from V_IN

FIGURE 2-28:

Load Regulation vs.

(V_R= 1.8V).

Junction Temperature (V_R= 2.8V).

V_IN= 0V to

3.8V

C

_OUT= 1 µF Ceramic

0.10

V_R= 5.0V

_OUT= 0 to 250 mA

R_LOAD= 25

I

0.05

0.00

V_IN= 6.0V

V

_IN

= 5.5V

-0.05

-0.10

-0.15

-0.20

V

_R= 2.8V

-40 -25 -10

5

20 35 50 65 80 95 110 125

Junction Temperature (°C)

FIGURE 2-26:

Start-up from V_IN

FIGURE 2-29:

Load Regulation vs.

(V_R= 2.8V).

Junction Temperature (V_R= 5.0V).

0.3

0.2

0.10

0.05

V_R= 1.8V

I_OUT= 0 to 200 mA

V_IN= 5.0V

0.1

0.0

0.00

V_R= 2.8V

V_IN= 3.5V

-0.05

-0.10

-0.15

-0.20

-0.25

-0.30

V_R= 1.8V

-0.1

-0.2

-0.3

-0.4

V_IN= 2.2V

V_R= 1.2V

-40 -25 -10

5

20 35 50 65 80 95 110 125

-40 -25 -10

5

20 35 50 65 80 95 110 125

Junction Temperature (°C)

FIGURE 2-27:

Load Regulation vs.

FIGURE 2-30:

Line Regulation vs.

Junction Temperature (V_R= 1.8V).

Temperature (V_R= 1.2V, 1.8V, 2.8V).

 2005-2013 Microchip Technology Inc.

DS20001826C-page 9

MCP1700

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1:

PIN FUNCTION TABLE

Pin No.

SOT-23

Pin No.

SOT-89

Pin No.

TO-92

Pin No.

2x2 DFN-6

Name

Function

1

2

1

3

1

3

GND

V_OUT

V_IN

Ground Terminal

6

Regulated Voltage Output

Unregulated Supply Voltage

No Connect

3

2

1

2, 4, 5

7

—

NC

EP

Exposed Thermal Pad

3.1

Ground Terminal (GND)

3.4

No Connect (NC)

Regulator ground. Tie GND to the negative side of the

output and the negative side of the input capacitor.

Only the LDO bias current (1.6 µA typical) flows out of

this pin; there is no high current. The LDO output

regulation is referenced to this pin. Minimize voltage

drops between this pin and the negative side of the

load.

No internal connection. The pins marked NC are true

“No Connect” pins.

3.5

Exposed Thermal Pad (EP)

There is an internal electrical connection between the

Exposed Thermal Pad (EP) and the GND pin; they

must be connected to the same potential on the Printed

Circuit Board (PCB).

3.2

Regulated Output Voltage (V

)

OUT

Connect V_OUTto the positive side of the load and the

positive terminal of the output capacitor. The positive

side of the output capacitor should be physically

located as close to the LDO V_OUTpin as is practical.

The current flowing out of this pin is equal to the DC

load current.

3.3

Unregulated Input Voltage Pin

(V )

IN

Connect V_INto the input unregulated source voltage.

As with all low dropout linear regulators, low source

impedance is necessary for the stable operation of the

LDO. The amount of capacitance required to ensure

low source impedance will depend on the proximity of

the input source capacitors or battery type. For most

applications, 1 µF of capacitance will ensure stable

operation of the LDO circuit. For applications that have

load currents below 100 mA, the input capacitance

requirement can be lowered. The type of capacitor

used can be ceramic, tantalum or aluminum

electrolytic. The low ESR characteristics of the ceramic

will yield better noise and PSRR performance at high

frequency.

DS20001826C-page 10

 2005-2013 Microchip Technology Inc.

MCP1700

4.0

4.1

DETAILED DESCRIPTION

Output Regulation

4.3

Overtemperature

A portion of the LDO output voltage is fed back to the

internal error amplifier and compared with the precision

internal bandgap reference. The error amplifier output

will adjust the amount of current that flows through the

P-Channel pass transistor, thus regulating the output

voltage to the desired value. Any changes in input

voltage or output current will cause the error amplifier

to respond and adjust the output voltage to the target

voltage (refer to Figure 4-1).

The internal power dissipation within the LDO is a

function of input-to-output voltage differential and load

current. If the power dissipation within the LDO is

excessive, the internal junction temperature will rise

above the typical shutdown threshold of 140°C. At that

point, the LDO will shut down and begin to cool to the

typical turn-on junction temperature of 130°C. If the

power dissipation is low enough, the device will

continue to cool and operate normally. If the power

dissipation remains high, the thermal shutdown

protection circuitry will again turn off the LDO,

protecting it from catastrophic failure.

4.2

Overcurrent

The MCP1700 internal circuitry monitors the amount of

current flowing through the P-Channel pass transistor.

In the event of a short circuit or excessive output

current, the MCP1700 will turn off the P-Channel

device for a short period, after which the LDO will

attempt to restart. If the excessive current remains, the

cycle will repeat itself.

MCP1700

V_OUT

V_IN

Error Amplifier

+V_IN

Voltage

Reference

-

+

Overcurrent

Overtemperature

GND

FIGURE 4-1:

Block Diagram.

 2005-2013 Microchip Technology Inc.

DS20001826C-page 11

MCP1700

5.0

FUNCTIONAL DESCRIPTION

The MCP1700 CMOS low dropout linear regulator is

intended for applications that need the lowest current

consumption while maintaining output voltage

regulation. The operating continuous load of the

MCP1700 ranges from 0 mA to 250 mA (V_R 2.5V).

The input operating voltage ranges from 2.3V to 6.0V,

making it capable of operating from two, three or four

alkaline cells or a single Li-Ion cell battery input.

5.1

Input

The input of the MCP1700 is connected to the source

of the P-Channel PMOS pass transistor. As with all

LDO circuits, a relatively low source impedance (10)

is needed to prevent the input impedance from causing

the LDO to become unstable. The size and type of the

required capacitor depend heavily on the input source

type (battery, power supply) and the output current

range of the application. For most applications (up to

100 mA), a 1 µF ceramic capacitor will be sufficient to

ensure circuit stability. Larger values can be used to

improve circuit AC performance.

5.2

Output

The maximum rated continuous output current for the

MCP1700 is 250 mA (V_R 2.5V). For applications

where V_R< 2.5V, the maximum output current is

200 mA.

A minimum output capacitance of 1.0 µF is required for

small signal stability in applications that have up to

250 mA output current capability. The capacitor type

can be ceramic, tantalum or aluminum electrolytic. The

ESR range on the output capacitor can range from 0

to 2.0.

5.3

Output Rise time

When powering up the internal reference output, the

typical output rise time of 500 µs is controlled to

prevent overshoot of the output voltage.

DS20001826C-page 12

 2005-2013 Microchip Technology Inc.

MCP1700

The maximum continuous operating junction

temperature specified for the MCP1700 is +125°C. To

estimate the internal junction temperature of the

MCP1700, the total internal power dissipation is

multiplied by the thermal resistance from junction to

ambient (R_JA). The thermal resistance from junction to

ambient for the SOT-23 pin package is estimated at

230°C/W.

6.0

6.1

APPLICATION CIRCUITS AND

ISSUES

Typical Application

The MCP1700 is most commonly used as a voltage

regulator. Its low quiescent current and low dropout

voltage make it ideal for many battery-powered

applications.

EQUATION 6-2:

MCP1700

T_JMAX= P_TOTAL R_JA+ T_AMAX

V_IN

GND

(2.3V to 3.2V)

V_OUT

1.8V

T_J(MAX)

=

Maximum continuous junction

temperature

V_IN

C_IN

V_OUT

1 µF Ceramic

I_OUT

150 mA

P_TOTAL

=

Total power dissipation of the device

C_OUT

1 µF Ceramic

R_JA

Thermal resistance from junction to

ambient

T_A(MAX)

=

Maximum ambient temperature

FIGURE 6-1:

Typical Application Circuit.

6.1.1

APPLICATION INPUT CONDITIONS

Package Type = SOT-23

The maximum power dissipation capability for a

package can be calculated given the junction-to-

ambient thermal resistance and the maximum ambient

temperature for the application. The following equation

can be used to determine the maximum internal power

dissipation of the package.

Input Voltage Range = 2.3V to 3.2V

V_INmaximum = 3.2V

V_OUTtypical = 1.8V

I_OUT= 150 mA maximum

EQUATION 6-3:

T_JMAX– T_AMAX

6.2

6.2.1

Power Calculations

P_DMAX= ---------------------------------------------------

R_JA

POWER DISSIPATION

P_D(MAX)

T_J(MAX)

=

Maximum power dissipation of the

device

The internal power dissipation of the MCP1700 is a

function of input voltage, output voltage and output

current. The power dissipation resulting from the

quiescent current draw is so low it is insignificant

(1.6 µA x V_IN). The following equation can be used to

calculate the internal power dissipation of the LDO.

Maximum continuous junction

temperature

T_A(MAX)

=

Maximum ambient temperature

R_JA

Thermal resistance from junction to

ambient

EQUATION 6-1:

P_LDO= V_INMAX– V_OUTMIN  I_OUTMAX

EQUATION 6-4:

T_JRISE= P_DMAX R_JA

P_LDO= Internal power dissipation of the

LDO Pass device

T_J(RISE)

=

Rise in the device’s junction

temperature over the ambient

temperature

V_IN(MAX)= Maximum input voltage

V_OUT(MIN)= Minimum output voltage of the

LDO

P_TOTAL

=

Maximum power dissipation of the

device

R_JA

Thermal resistance from junction to

ambient

 2005-2013 Microchip Technology Inc.

DS20001826C-page 13

MCP1700

EQUATION 6-5:

T_J(RISE)= P_TOTALx R_JA

T_J= T_JRISE+ T_A

T_J(RISE)= 218.1 milli-Watts x 230.0°C/Watt

T_J(RISE)= 50.2°C

T_J

=

Junction Temperature

Junction Temperature Estimate

T_J(RISE)

Rise in the device’s junction

temperature over the ambient

temperature

To estimate the internal junction temperature, the

calculated temperature rise is added to the ambient or

offset temperature. For this example, the worst-case

junction temperature is estimated below.

T_A

=

Ambient temperature

6.3

Voltage Regulator

T_J= T_J(RISE)+ T_A(MAX)

Internal power dissipation, junction temperature rise,

junction temperature and maximum power dissipation

are calculated in the following example. The power

dissipation resulting from ground current is small

enough to be neglected.

T_J= 90.2°C

Maximum Package Power Dissipation at +40°C

Ambient Temperature

2x2 DFN-6 (91°C/Watt = R_JA

P_D(MAX)= (125°C - 40°C) / 91°C/W

_D(MAX)= 934 milli-Watts

SOT-23 (230.0°C/Watt = R_JA

)

6.3.1

POWER DISSIPATION EXAMPLE

P

Package

)

Package Type = SOT-23

Input Voltage

P_D(MAX)= (125°C - 40°C) / 230°C/W

P_D(MAX)= 369.6 milli-Watts

V_IN= 2.3V to 3.2V

SOT-89 (52°C/Watt = R_JA

)

LDO Output Voltages and Currents

V_OUT= 1.8V

P_D(MAX)= (125°C - 40°C) / 52°C/W

P_D(MAX)= 1.635 Watts

I_OUT= 150 mA

TO-92 (131.9°C/Watt = R_JA

)

Maximum Ambient Temperature

T_A(MAX)= +40°C

P_D(MAX)= (125°C - 40°C) / 131.9°C/W

P_D(MAX)= 644 milli-Watts

Internal Power Dissipation

Internal Power dissipation is the product of the LDO

output current times the voltage across the LDO

(V_INto V_OUT).

P_LDO(MAX)= (V_IN(MAX)- V_OUT(MIN)) x I_OUT(MAX)

P_LDO= (3.2V - (0.97 x 1.8V)) x 150 mA

P_LDO= 218.1 milli-Watts

Device Junction Temperature Rise

The internal junction temperature rise is a function of

internal power dissipation and the thermal resistance

from junction to ambient for the application. The thermal

resistance from junction to ambient (R_JA) is derived

from an EIA/JEDEC^®standard for measuring thermal

resistance for small surface mount packages. The EIA/

JEDEC specification is JESD51-7, “High Effective

Thermal Conductivity Test Board for Leaded Surface

Mount Packages”. The standard describes the test

method and board specifications for measuring the

thermal resistance from junction to ambient. The actual

thermal resistance for a particular application can vary

depending on many factors, such as copper area and

thickness. Refer to AN792, “A Method to Determine

How Much Power a SOT-23 Can Dissipate in an

Application” (DS00792), for more information regarding

this subject.

DS20001826C-page 14

 2005-2013 Microchip Technology Inc.

MCP1700

6.4

Voltage Reference

The MCP1700 can be used not only as a regulator, but

also as a low quiescent current voltage reference. In

many microcontroller applications, the initial accuracy

of the reference can be calibrated using production test

equipment or by using a ratio measurement. When the

initial accuracy is calibrated, the thermal stability and

line regulation tolerance are the only errors introduced

by the MCP1700 LDO. The low cost, low quiescent

current and small ceramic output capacitor are all

advantages when using the MCP1700 as a voltage

reference.

Ratio Metric Reference

®

1 µA Bias

PIC

MCP1700

Microcontroller

V

IN

C

1 µF

IN

V

REF

OUT

C

1 µF

OUT

GND

AD0

AD1

Bridge Sensor

FIGURE 6-2:

Using the MCP1700 as a

voltage reference.

6.5

Pulsed Load Applications

For some applications, there are pulsed load current

events that may exceed the specified 250 mA

maximum specification of the MCP1700. The internal

current limit of the MCP1700 will prevent high peak

load demands from causing non-recoverable damage.

The 250 mA rating is a maximum average continuous

rating. As long as the average current does not exceed

250 mA, pulsed higher load currents can be applied to

the MCP1700. The typical current limit for the

MCP1700 is 550 mA (T_A+ 25°C).

 2005-2013 Microchip Technology Inc.

DS20001826C-page 15

MCP1700

7.0

7.1

PACKAGING INFORMATION

Package Marking Information

3-Pin SOT-23

Standard

Extended Temp

Symbol

CK

Voltage *

1.2

CKNN

CM

CP

CQ

CR

CS

CU

1.8

2.5

2.8

3.0

3.3

5.0

3-Pin SOT-89

CUYYWW

NNN

* Custom output voltages available upon request.

Contact your local Microchip sales office for more

information.

Example

3-Pin TO-92

1700

XXXXXX

YWWNNN

1202E

e

3

TO^^

322256

6-Lead DFN (2x2x0.9 mm)

Example

Part Number

Code

ABB

256

ABB

ABC

ABD

ABF

ABE

AAZ

ABA

MCP1700T-1202E/MAY

MCP1700T-1802E/MAY

MCP1700T-2502E/MAY

MCP1700T-2802E/MAY

MCP1700T-3002E/MAY

MCP1700T-3302E/MAY

MCP1700T-5002E/MAY

Legend: XX...X Customer-specific information

Y

Year code (last digit of calendar year)

YY

WW

NNN

Year code (last 2 digits of calendar year)

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

Pb-free JEDEC^®designator for Matte Tin (Sn)

e

3

*

This package is Pb-free. The Pb-free JEDEC designator (

can be found on the outer packaging for this package.

)

e3

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

DS20001826C-page 16

 2005-2013 Microchip Technology Inc.

MCP1700

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 2005-2013 Microchip Technology Inc.

DS20001826C-page 17

MCP1700

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

DS20001826C-page 18

 2005-2013 Microchip Technology Inc.

MCP1700

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 2005-2013 Microchip Technology Inc.

DS20001826C-page 19

MCP1700

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

DS20001826C-page 20

 2005-2013 Microchip Technology Inc.

MCP1700

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 2005-2013 Microchip Technology Inc.

DS20001826C-page 21

MCP1700

DS20001826C-page 22

 2005-2013 Microchip Technology Inc.

MCP1700

 2005-2013 Microchip Technology Inc.

DS20001826C-page 23

MCP1700

NOTES:

DS20001826C-page 24

 2005-2013 Microchip Technology Inc.

MCP1700

APPENDIX A: REVISION HISTORY

Revision C (October 2013)

The following is the list of modifications:

1. Added new package to the family (2x2 DFN-6)

and related information throughout the

document.

2. Updated

thermal

package

resistance

information in Temperature Specifications.

3. Updated Section 3.0, Pin Descriptions.

4. Added package markings and drawings for the

2x2 DFN-6 package.

5. Added information related to the 2.8V option

throughout the document.

6. Updated Product Identification System.

7. Minor typographical changes.

Revision B (February 2007)

• Updated Packaging Information.

• Corrected Product Identification System.

• Changed X5R to X7R in Notes to DC

Characteristics, Temperature Specifications, and

Section 2.0, Typical Performance Curves.

Revision A (November 2005)

• Original Release of this Document.

 2005-2013 Microchip Technology Inc.

DS20001826C-page 25

MCP1700

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.

MCP1700

X-

XXX

X

/XX

Examples:

2x2 DFN-6 Package:

Tape & Voltage Tolerance Temp. Package

Output

Reel

Range

a) MCP1700T-1202E/MAY:1.2V V_OUT

b) MCP1700T-1802E/MAY:1.8V V_OUT

c) MCP1700T-2502E/MAY:2.5V V_OUT

d) MCP1700T-2802E/MAY:2.8V V_OUT

e) MCP1700T-3002E/MAY:3.0V V_OUT

f) MCP1700T-3302E/MAY:3.3V V_OUT

g) MCP1700T-5002E/MAY:5.0V V_OUT

SOT-89 Package:

Device:

MCP1700: Low Quiescent Current LDO

Tape and Reel:

T:

Tape and Reel only applies to SOT-23 and SOT-89

devices

Standard Output

Voltage: *

120 = 1.2V

180 = 1.8V

250 = 2.5V

280 = 2.8V

300 = 3.0V

330 = 3.3V

500 = 5.0V

a) MCP1700T-1202E/MB:1.2V V_OUT

b) MCP1700T-1802E/MB:1.8V V_OUT

c) MCP1700T-2502E/MB:2.5V V_OUT

d) MCP1700T-2802E/MB:2.8V V_OUT

e) MCP1700T-3002E/MB:3.0V V_OUT

f) MCP1700T-3302E/MB:3.3V V_OUT

g) MCP1700T-5002E/MB:5.0V V_OUT

TO-92 Package:

* Custom output voltages available upon request. Contact

your local Microchip sales office for more information

Tolerance:

2

=

2%

Temperature Range:

Package:

E

-40°C to +125°C (Extended)

a) MCP1700-1202E/TO:1.2V V_OUT

b) MCP1700-1802E/TO:1.8V V_OUT

c) MCP1700-2502E/TO:2.5V V_OUT

d) MCP1700-2802E/TO:2.8V V_OUT

e) MCP1700-3002E/TO:3.0V V_OUT

f) MCP1700-3302E/TO:3.3V V_OUT

g) MCP1700-5002E/TO:5.0V V_OUT

SOT-23 Package:

MAY = Plastic Small Outline Transistor (DFN), 6-lead

MB

TO

TT

=

Plastic Small Outline Transistor (SOT-89), 3-lead

Plastic Small Outline Transistor (TO-92), 3-lead

Plastic Small Outline Transistor (SOT-23), 3-lead

a) MCP1700T-1202E/TT:1.2V V_OUT

b) MCP1700T-1802E/TT:1.8V V_OUT

c) MCP1700T-2502E/TT:2.5V V_OUT

d) MCP1700T-2802E/TT:2.8V V_OUT

e) MCP1700T-3002E/TT:3.0V V_OUT

f) MCP1700T-3302E/TT:3.3V V_OUT

g) MCP1700T-5002E/TT:5.0V V_OUT

DS20001826C-page 26

 2005-2013 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC,

FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,

PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash

and UNI/O are registered trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

32

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,

MTP, SEEVAL and The Embedded Control Solutions

Company are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Silicon Storage Technology is a registered trademark of

Microchip Technology Inc. in other countries.

Analog-for-the-Digital Age, Application Maestro, BodyCom,

chipKIT, chipKIT logo, CodeGuard, dsPICDEM,

dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial

Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB

Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code

Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,

PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,

Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA

and Z-Scale are trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

GestIC and ULPP are registered trademarks of Microchip

Technology Germany II GmbH & Co. KG, a subsidiary of

Microchip Technology Inc., in other countries.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

ISBN: 978-1-62077-526-4

QUALITY MANAGEMENT SYSTEM

CERTIFIED BY DNV

Microchip received ISO/TS-16949:2009 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC^®MCUs and dsPIC^®DSCs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

== ISO/TS 16949 ==

 2005-2013 Microchip Technology Inc.

DS20001826C-page 27

Worldwide Sales and Service

AMERICAS

ASIA/PACIFIC

EUROPE

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://www.microchip.com/

support

Asia Pacific Office

Suites 3707-14, 37th Floor

Tower 6, The Gateway

Harbour City, Kowloon

Hong Kong

Tel: 852-2401-1200

Fax: 852-2401-3431

India - Bangalore

Tel: 91-80-3090-4444

Fax: 91-80-3090-4123

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

India - New Delhi

Tel: 91-11-4160-8631

Fax: 91-11-4160-8632

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

India - Pune

Tel: 91-20-3019-1500

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

Web Address:

www.microchip.com

Japan - Osaka

Tel: 81-6-6152-7160

Fax: 81-6-6152-9310

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Atlanta

Duluth, GA

Tel: 678-957-9614

Fax: 678-957-1455

China - Beijing

Tel: 86-10-8569-7000

Fax: 86-10-8528-2104

Japan - Tokyo

Tel: 81-3-6880- 3770

Fax: 81-3-6880-3771

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

China - Chengdu

Tel: 86-28-8665-5511

Fax: 86-28-8665-7889

Boston

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Korea - Daegu

Tel: 82-53-744-4301

Fax: 82-53-744-4302

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

China - Chongqing

Tel: 86-23-8980-9588

Fax: 86-23-8980-9500

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Korea - Seoul

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

China - Hangzhou

Tel: 86-571-2819-3187

Fax: 86-571-2819-3189

UK - Wokingham

Tel: 44-118-921-5869

Fax: 44-118-921-5820

Cleveland

Malaysia - Kuala Lumpur

Tel: 60-3-6201-9857

Fax: 60-3-6201-9859

Independence, OH

Tel: 216-447-0464

Fax: 216-447-0643

China - Hong Kong SAR

Tel: 852-2943-5100

Fax: 852-2401-3431

Malaysia - Penang

Tel: 60-4-227-8870

Fax: 60-4-227-4068

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

China - Nanjing

Tel: 86-25-8473-2460

Fax: 86-25-8473-2470

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

Detroit

Farmington Hills, MI

Tel: 248-538-2250

Fax: 248-538-2260

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

Indianapolis

Noblesville, IN

Tel: 317-773-8323

Fax: 317-773-5453

Taiwan - Hsin Chu

Tel: 886-3-5778-366

Fax: 886-3-5770-955

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

Taiwan - Kaohsiung

Tel: 886-7-213-7828

Fax: 886-7-330-9305

Los Angeles

China - Shenzhen

Tel: 86-755-8864-2200

Fax: 86-755-8203-1760

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

Taiwan - Taipei

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Tel: 886-2-2508-8600

Fax: 886-2-2508-0102

Santa Clara

Santa Clara, CA

Tel: 408-961-6444

Fax: 408-961-6445

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

China - Xian

Tel: 86-29-8833-7252

Fax: 86-29-8833-7256

Toronto

Mississauga, Ontario,

Canada

China - Xiamen

Tel: 905-673-0699

Fax: 905-673-6509

Tel: 86-592-2388138

Fax: 86-592-2388130

China - Zhuhai

Tel: 86-756-3210040

Fax: 86-756-3210049

08/20/13

DS20001826C-page 28

 2005-2013 Microchip Technology Inc.


型号：	MCP1700-2802E/TT
厂家：	MICROCHIP
描述：	FIXED POSITIVE LDO REGULATOR
文件：	总28页 (文件大小：949K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCP1700-2802E/TT [MICROCHIP]

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