MCP1703T-2402E/CB [MICROCHIP]
IC REG LDO 2.4V 0.2A SOT23A-3;
| 型号： | MCP1703T-2402E/CB |
| 厂家： | 
MICROCHIP |
| 描述： | IC REG LDO 2.4V 0.2A SOT23A-3 |
| 文件： | 总32页 (文件大小：721K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCP1703
250 mA, 16V, Low Quiescent Current LDO Regulator
Features:
Description:
• 2.0 µA Typical Quiescent Current
The MCP1703 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 2.0 µA of quiescent
current (typical). The input operating range is specified
from 2.7V to 16.0V, making it an ideal choice for two to
six primary cell battery-powered applications, 9V
alkaline and one or two cell Li-Ion-powered
applications.
• Input Operating Voltage Range: 2.7V to16.0V
• 250 mA Output Current for Output Voltages ≥ 2.5V
• 200 mA Output Current for Output Voltages < 2.5V
• Low Dropout Voltage, 625 mV typical @ 250 mA
for VR = 2.8V
• 0.4% Typical Output Voltage Tolerance
• Standard Output Voltage Options:
The MCP1703 is capable of delivering 250 mA with
only 625 mV (typical) of input to output voltage
differential (VOUT = 2.8V). The output voltage tolerance
of the MCP1703 is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C. Line regulation is ±0.1%
typical at +25°C.
- 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V,
5.0V
• Output Voltage Range: 1.2V to 5.5V in 0.1V
Increments (50 mV increments available upon
request)
• Stable with 1.0 µF to 22 µF Ceramic Output
Capacitance
Output voltages available for the MCP1703 range from
1.2V to 5.5V. The LDO output is stable when using only
1 µF of output capacitance. Ceramic, tantalum, or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
Package options include the SOT-223-3, SOT-23A,
2x3 DFN-8, and SOT-89-3.
• Short-Circuit Protection
• Overtemperature Protection
Applications:
• Battery-Powered Devices
• Battery-Powered Alarm Circuits
• Smoke Detectors
Package Types
• CO2 Detectors
• Pagers and Cellular Phones
• Smart Battery Packs
2x3 DFN-8 *
3-Pin SOT-23A
V
IN
V
1
2
8 V
OUT
IN
• Low Quiescent Current Voltage Reference
• PDAs
3
NC
NC
7
EP
9
NC
NC
NC
3
4
6
5
• Digital Cameras
GND
• Microcontroller Power
• Solar-Powered Instruments
• Consumer Products
1
2
GND V
OUT
• Battery-Powered Data Loggers
SOT-223-3
3-Pin SOT-89
V
Related Literature:
IN
• AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2002
• AN766, “Pin-Compatible CMOS Upgrades to
Bipolar LDOs”, DS00766,
2
1
3
1
2
3
Microchip Technology Inc., 2002
GND V
V
V
IN OUT
IN
GND V
OUT
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
* Includes Exposed Thermal Pad (EP); see Table 3-1.
© 2011 Microchip Technology Inc.
DS22049F-page 1
MCP1703
Functional Block Diagrams
MCP1703
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
-
+
Overcurrent
Overtemperature
GND
Typical Application Circuits
MCP1703
VOUT
3.3V
VOUT
IOUT
COUT
1 µF Ceramic
50 mA
V
IN
VIN
VIN
+
9V
Battery
CIN
1 µF Ceramic
GND
DS22049F-page 2
© 2011 Microchip Technology Inc.
MCP1703
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
..................................................................................+18V
DD
All inputs and outputs w.r.t. .............(V -0.3V) to (V +0.3V)
SS
IN
Peak Output Current ...................................................500 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature.................................+150°C
ESD protection on all pins (HBM;MM)............... ≥ 4 kV; ≥ 400V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for V = V
+ V
, Note 1,
IN
OUT(MAX)
DROPOUT(MAX)
I
= 100 µA, C
= 1 µF (X7R), C = 1 µF (X7R), T = +25°C.
LOAD
OUT IN A
Boldface type applies for junction temperatures, T (Note 7) of -40°C to +125°C.
J
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Input / Output Characteristics
Input Operating Voltage
V
I
2.7
—
—
16.0
5
V
Note 1
IN
Input Quiescent Current
Maximum Output Current
2.0
—
µA
I = 0 mA
L
q
I
250
50
—
—
—
—
—
—
mA
mA
mA
mA
mA
mA
For V ≥ 2.5V
R
OUT_mA
100
130
200
250
400
For V < 2.5V, V ≥ 2.7V
R IN
100
150
200
—
For V < 2.5V, V ≥ 2.95V
R IN
For V < 2.5V, V ≥ 3.2V
R
IN
For V < 2.5V, V ≥ 3.45V
R
IN
Output Short Circuit Current
Output Voltage Regulation
I
V
= V
(Note 1), V
= GND,
OUT
OUT_SC
IN
IN(MIN)
Current (average current) measured
10 ms after short is applied.
V
V -3.0% V ±0.4% V +3.0%
V
V
Note 2
OUT
R
R
R
V -2.0% V ±0.4% V +2.0%
R
R
R
V -1.0% V ±0.4% V +1.0%
V
1% Custom
R
R
R
V
Temperature Coefficient
TCV
—
50
—
ppm/°C
%/V
Note 3
OUT
OUT
Line Regulation
ΔV
/
-0.3
±0.1
+0.3
(V
+ V
) ≤ V
OUT
OUT(MAX)
DROPOUT(MAX) IN
(V
XΔV
)
IN
≤ 16V, Note 1
OUT
Load Regulation
ΔV
/V
-2.5
±1.0
+2.5
%
I = 1.0 mA to 250 mA for V >= 2.5V
OUT OUT
L
R
I = 1.0 mA to 200 mA for V < 2.5V
L
R
V
= 3.65V, Note 4
IN
Note 1: The minimum V must meet two conditions: V ≥ 2.7V and V ≥ (V
+ V
).
IN
IN
IN
OUT(MAX)
DROPOUT(MAX)
2:
V is the nominal regulator output voltage. For example: V = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
R
R
The input voltage V = V
+ V
or Vi = 2.7V (whichever is greater); I
= 100 µA.
IN
OUT(MAX)
DROPOUT(MAX)
6
IN
OUT
3: TCV
= (V
- V
) *10 / (V * ΔTemperature), V
= highest voltage measured over the
OUT
OUT-HIGH
OUT-LOW
R
OUT-HIGH
temperature range. V
= lowest voltage measured over the temperature range.
OUT-LOW
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
.
OUT
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V + V or 2.7V, whichever is greater.
OUT(MAX)
DROPOUT(MAX)
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T , T , θ ). Exceeding the maximum allowable power
A
J
JA
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
© 2011 Microchip Technology Inc.
DS22049F-page 3
MCP1703
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V = V
+ V
, Note 1,
IN
OUT(MAX)
DROPOUT(MAX)
I
= 100 µA, C
= 1 µF (X7R), C = 1 µF (X7R), T = +25°C.
LOAD
OUT IN A
Boldface type applies for junction temperatures, T (Note 7) of -40°C to +125°C.
J
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Dropout Voltage
Note 1, Note 5
V
—
—
—
—
—
330
525
625
750
—
650
725
975
1100
—
mV
mV
mV
mV
mV
I = 250 mA, V = 5.0V
L R
DROPOUT
I = 250 mA, 3.3V ≤ V < 5.0V
L
R
I = 250 mA, 2.8V ≤ V < 3.3V
L
R
I = 250 mA, 2.5V ≤ V < 2.8V
L
R
V
< 2.5V, See Maximum Output
R
Current Parameter
Output Delay Time
Output Noise
T
—
1000
—
µs
V
= 0V to 6V, V
= 90% V ,
OUT R
DELAY
IN
R = 50Ω resistive
L
1/2
e
—
—
8
µV/(Hz)
dB
I = 50 mA, f = 1 kHz, C
= 1 µF
OUT
N
L
Power Supply Ripple
Rejection Ratio
PSRR
44
—
—
f = 100 Hz, C
V
V
= 1 µF, I = 100 µA,
OUT L
= 100 mV pk-pk, C = 0 µF,
INAC
IN
= 1.2V
R
Thermal Shutdown Protection
T
—
150
°C
SD
Note 1: The minimum V must meet two conditions: V ≥ 2.7V and V ≥ (V
+ V
).
IN
IN
IN
OUT(MAX)
DROPOUT(MAX)
2:
V is the nominal regulator output voltage. For example: V = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
R
R
The input voltage V = V
+ V
or Vi = 2.7V (whichever is greater); I
= 100 µA.
IN
OUT(MAX)
DROPOUT(MAX)
6
IN
OUT
3: TCV
= (V
- V
) *10 / (V * ΔTemperature), V
= highest voltage measured over the
OUT-HIGH
OUT
OUT-HIGH
OUT-LOW
R
temperature range. V
= lowest voltage measured over the temperature range.
OUT-LOW
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
.
OUT
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V + V or 2.7V, whichever is greater.
OUT(MAX)
DROPOUT(MAX)
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T , T , θ ). Exceeding the maximum allowable power
A
J
JA
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
(1)
TEMPERATURE SPECIFICATIONS
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
T
T
-40
—
—
—
—
+125
+150
+150
°C
°C
°C
Steady State
Transient
J
J
T
-65
A
Thermal Package Resistance (Note 2)
Thermal Resistance, 3LD SOT-223
θ
θ
—
—
62
15
—
—
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
JA
JC
°C/W
°C/W
°C/W
°C/W
Thermal Resistance, 3LD SOT-23A
Thermal Resistance, 3LD SOT-89
Thermal Resistance, 8LD 2x3 DFN
θ
θ
—
—
336
110
—
—
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
JA
JC
θ
θ
—
—
153,3
100
—
—
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
JA
JC
θ
θ
—
—
93
26
—
—
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
JA
JC
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T , T , θ ). Exceeding the maximum allowable power
A
J
JA
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
2: Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging
information.
DS22049F-page 4
© 2011 Microchip Technology Inc.
MCP1703
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
Note: Junction Temperature (T ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
J
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
6.00
5.00
4.00
3.00
2.00
1.00
0.00
120
100
80
60
40
20
0
VOUT = 1.2V
IOUT = 0 µA
VOUT = 1.2V
IN = 2.7V
V
+130°C
-45°C
+90°C
+25°C
0°C
2
4
6
8
10
12
14
16
18
0
40
80
120
160
200
Input Voltage (V)
Load Current (mA)
FIGURE 2-1:
Quiescent Current vs. Input
FIGURE 2-4:
Ground Current vs. Load
Voltage.
Current.
6.00
5.00
4.00
3.00
2.00
1.00
120
100
80
VOUT = 2.5V
VOUT = 5.0V
VIN = 6.0V
IOUT = 0 µA
+130°C
+90°C
60
VOUT = 2.5V
VIN = 3.5V
40
+25°C
-45°C
20
0°C
0.00
2
0
0
4
6
8
10
12
14
16
18
50
100
150
200
250
Input Voltage (V)
Load Current (mA)
FIGURE 2-2:
Quiescent Current vs. Input
FIGURE 2-5:
Ground Current vs. Load
Voltage.
Current.
6.00
5.00
4.00
3.00
2.00
3.00
VOUT = 5.0V
IOUT = 0 µA
IOUT = 0 mA
VOUT = 1.2V
VOUT = 2.5V
VIN = 3.5V
V
IN = 2.7V
2.50
2.00
1.50
1.00
0.50
0.00
0°C
-45°C
+130°C
+25°C
VOUT = 5.0V
IN = 6.0V
+90°C
14
V
1.00
6
8
10
12
16
18
-45
-20
5
30
55
80
105
130
Input Voltage (V)
Junction Temperature (°C)
FIGURE 2-3:
Quiescent Current vs. Input
FIGURE 2-6:
Quiescent Current vs.
Voltage.
Junction Temperature.
© 2011 Microchip Technology Inc.
DS22049F-page 5
MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
1.240
1.230
1.220
1.210
1.200
1.190
1.180
1.24
1.23
1.22
1.21
1.20
1.19
1.18
VOUT = 1.2V
ILOAD = 0.1 mA
0°C
+25°C
-45°C
-45°C
0°C
+90°C
+130°C
+130°C
+90°C
+25°C
VIN = 3.0V
VOUT = 1.2V
2
4
6
8
10
12
14
16
18
0
20 40 60 80 100 120 140 160 180 200
Load Current (mA)
Input Voltage (V)
FIGURE 2-7:
Output Voltage vs. Input
FIGURE 2-10:
Output Voltage vs. Load
Voltage.
Current.
2.58
2.54
2.53
2.52
2.51
2.50
2.49
2.48
VIN = 3.5V
VOUT = 2.5V
V
OUT = 2.5V
ILOAD = 0.1 mA
2.56
2.54
2.52
2.50
2.48
2.46
2.44
+25°C
+90°C
+90°C
+130°C
0°C
-45°C
0°C
+130°C
+25°C
-45°C
2.47
2.46
2
4
6
8
10
12
14
16
18
0
50
100
150
200
250
Input Voltage (V)
Load Current (mA)
FIGURE 2-8:
Output Voltage vs. Input
FIGURE 2-11:
Output Voltage vs. Load
Voltage.
Current.
5.16
5.06
5.04
VIN = 6V
VOUT = 5.0V
VOUT = 5.0V
5.12
5.08
5.04
5.00
4.96
4.92
4.88
+90°C
ILOAD = 0.1 mA
+130°C
5.02
5.00
4.98
4.96
4.94
4.92
+90°C
+130°C
-45°C
0°C
0°C
-45°C
+25°C
+25°C
6
8
10
12
14
16
18
0
50
100
150
200
250
Input Voltage (V)
Load Current (mA)
FIGURE 2-9:
Output Voltage vs. Input
FIGURE 2-12:
Output Voltage vs. Load
Voltage.
Current.
DS22049F-page 6
© 2011 Microchip Technology Inc.
MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
1.00
VOUT = 2.5V
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
+130°C
+90°C
+25°C
+0°C
-45°C
0
25 50 75 100 125 150 175 200 225 250
Load Current (mA)
FIGURE 2-13:
Dropout Voltage vs. Load
FIGURE 2-16:
Dynamic Line Response.
Current.
0.50
900
800
700
600
500
400
300
200
100
0
VOUT = 2.5V
ROUT < 0.1?
VOUT = 5.0V
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
+130°C
+90°C
+25°C
+0°C
-45°C
0
25 50 75 100 125 150 175 200 225 250
Load Current (mA)
2
4
6
8
10
12
14
16
18
Input Voltage (V)
FIGURE 2-14:
Dropout Voltage vs. Load
FIGURE 2-17:
Short Circuit Current vs.
Current.
Input Voltage.
1.00
0.90
0.80
0.70
0.60
0.50
0.40
VOUT = 1.2V
IOUT = 1 mA to 200 mA
VIN = 6V
VIN = 12V
VIN = 16V
VIN = 14V
VIN = 3.8V
0.30
0.20
VIN = 3.2V
-45
-20
5
30
55
80
105
130
Temperature (°C)
FIGURE 2-15:
Dynamic Line Response.
FIGURE 2-18:
Load Regulation vs.
Temperature.
© 2011 Microchip Technology Inc.
DS22049F-page 7
MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
1.20
1.00
0.80
0.60
0.40
0.20
0.00
-0.20
-0.40
0.20
0.16
0.12
0.08
0.04
0.00
VOUT = 2.5V
VIN = 3.5V to 16V
VOUT = 2.5V
IOUT = 1 mA to 250 mA
VIN = 16V
200 mA
100 mA
250 mA
VIN = 6V
VIN = 3.5V
0 mA
VIN = 12V
VIN = 14V
-45
-20
5
30
55
80
105
130
-45
-20
5
30
55
80
105
130
Temperature (°C)
Temperature (°C)
FIGURE 2-19:
Load Regulation vs.
FIGURE 2-22:
Line Regulation vs.
Temperature.
Temperature.
1.00
0.80
0.18
0.16
VOUT = 5.0V
VOUT = 5.0V
IOUT = 1 to 250 mA
V
IN = 6.0V to 16.0V
VIN = 16V
VIN = 6V
0.60
0.40
0.20
0.00
-0.20
-0.40
200mA
0.14
VIN = 12V
250 mA
0.12
VIN = 8V
0.10
0 mA
100 mA
0.08
VIN = 14V
0.06
-45
-20
5
30
55
80
105
130
-45
-20
5
30
55
80
105
130
Temperature (°C)
Temperature (°C)
FIGURE 2-20:
Load Regulation vs.
FIGURE 2-23:
Line Regulation vs.
Temperature.
Temperature.
0.16
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
VIN = 3.0 to 16.0V
OUT = 1.2V
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
V
200 mA
1 mA
VR=1.2V
0 mA
VIN=2.7V
VINAC = 100 mV p-p
100 mA
CIN=0 μF
IOUT=100 µA
-45
-20
5
30
55
80
105
130
0.01
0.1
1
10
100
1000
Frequency (kHz)
Temperature (°C)
FIGURE 2-21:
Line Regulation vs.
FIGURE 2-24:
PSRR vs. Frequency.
Temperature.
DS22049F-page 8
© 2011 Microchip Technology Inc.
MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
0
-10
-20
-30
-40
VR=5.0V
-50
VIN=6.0V
-60
-70
-80
-90
V
C
INAC = 100 mV p-p
IN=0 μF
IOUT=100 µA
0.01
0.1
1
10
100
1000
Frequency (KHz)
FIGURE 2-25:
PSRR vs. Frequency.
FIGURE 2-28:
Dynamic Load Response.
100
10
IOUT=50 mA
VR=5.0V, VIN=6.0V
VR=2.8V, VIN=3.8V
1
0.1
VR=1.2V, VIN=2.7V
0.01
0.001
0.01
0.1
1
10
100
1000
Frequency (kHz)
FIGURE 2-26:
Output Noise vs. Frequency.
FIGURE 2-29:
Dynamic Load Response.
4.0
3.0
RLOAD=10 kΩ
2.0
1.0
0.0
VR = 2.5V
4.0
3.0
2.0
1.0
0.0
Input Voltage (V)
FIGURE 2-27:
Power Up Timing.
FIGURE 2-30:
Output Voltage vs. Input
Voltage.
© 2011 Microchip Technology Inc.
DS22049F-page 9
MCP1703
4.0
3.0
2.0
1.0
VR = 3.3V
ILOAD = 1 mA
ILOAD = 44 µA
0.0
4.0
3.0
2.0
1.0
0.0
Input Voltage (V)
FIGURE 2-31:
Output Voltage vs. Input
Voltage.
DS22049F-page 10
© 2011 Microchip Technology Inc.
MCP1703
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP1703 PIN FUNCTION TABLE
Pin No.
2x3 DFN-8
Pin No.
SOT-223-3
Pin No.
SOT-23A
Pin No.
SOT-89-3
Name
Function
4
2,Tab
3
1
2
1
3
GND
VOUT
VIN
Ground Terminal
1
Regulated Voltage Output
Unregulated Supply Voltage
No Connection
8
1
3
2,Tab
—
2, 3, 5, 6, 7
9
—
—
—
NC
—
—
EP
Exposed Thermal Pad (EP); must be
connected to VSS
3.1
Ground Terminal (GND)
3.3
Unregulated Input Voltage (V )
IN
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current (2.0 µA typical) flows out of
this pin; there is no high current. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
Connect VIN to the input unregulated source voltage.
Like all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
used can be ceramic, tantalum, or aluminum
electrolytic. The low ESR characteristics of the ceramic
will yield better noise and PSRR performance at
high-frequency.
3.2
Regulated Output Voltage (V
)
OUT
Connect VOUT to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO VOUT pin as is practical.
The current flowing out of this pin is equal to the DC
load current.
3.4
Exposed Thermal Pad (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the VSS pin; they must
be connected to the same potential on the Printed
Circuit Board (PCB).
© 2011 Microchip Technology Inc.
DS22049F-page 11
MCP1703
4.0
4.1
DETAILED DESCRIPTION
Output Regulation
4.3
Overtemperature
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal band gap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1).
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 150°C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
4.2
Overcurrent
The MCP1703 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1703 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
MCP1703
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
-
+
Overcurrent
Overtemperature
GND
FIGURE 4-1:
Block Diagram.
DS22049F-page 12
© 2011 Microchip Technology Inc.
MCP1703
5.2
Output
5.0
FUNCTIONAL DESCRIPTION
The maximum rated continuous output current for the
MCP1703 is 250 mA (VR ≥ 2.5V). For applications
where VR < 2.5V, the maximum output current is
200 mA.
The MCP1703 CMOS low dropout linear regulator is
intended for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load range of the
MCP1703 is from 0 mA to 250 mA (VR ≥ 2.5V). The
input operating voltage range is from 2.7V to 16.0V,
making it capable of operating from two or more
alkaline cells or single and multiple Li-Ion cell batteries.
A minimum output capacitance of 1.0 µF is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum, or aluminum electrolytic. The
Equivalent Series Resistance (ESR) range on the
output capacitor can range from 0Ω to 2.0Ω.
5.1
Input
The output capacitor range for ceramic capacitors is
1 µF to 22 µF. Higher output capacitance values may
be used for tantalum and electrolytic capacitors. Higher
output capacitor values pull the pole of the LDO
transfer function inward that results in higher phase
shifts which in turn cause a lower crossover frequency.
The circuit designer should verify the stability by
applying line step and load step testing to their system
when using capacitance values greater than 22 µF.
The input of the MCP1703 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10Ω)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
capacitor needed depends heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications (up to
100 mA), a 1 µF ceramic capacitor will be sufficient to
ensure circuit stability. Larger values can be used to
improve circuit AC performance.
5.3
Output Rise Time
When powering up the internal reference output, the
typical output rise time of 1000 µs is controlled to
prevent overshoot of the output voltage.
© 2011 Microchip Technology Inc.
DS22049F-page 13
MCP1703
EQUATION 6-2:
TJ(MAX) = PTOTAL × RθJA + TAMAX
6.0
APPLICATION CIRCUITS &
ISSUES
Where:
TJ(MAX)
6.1
Typical Application
=
Maximum continuous junction
temperature
The MCP1703 is most commonly used as a voltage
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
PTOTAL
=
=
Total device power dissipation
RθJA
Thermal resistance from
junction-to-ambient
TAMAX
=
Maximum ambient temperature
MCP1703
VIN
2.7V to 4.8V
GND
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
VOUT
1.8V
V
IN
CIN
V
OUT
1 µF Ceramic
IOUT
50 mA
COUT
1 µF Ceramic
FIGURE 6-1:
Typical Application Circuit.
EQUATION 6-3:
6.1.1
APPLICATION INPUT CONDITIONS
Package Type = SOT-23A
(TJ(MAX) – TA(MAX)
PD(MAX) = ---------------------------------------------------
RθJA
)
Input Voltage Range = 2.7V to 4.8V
VIN maximum = 4.8V
Where:
PD(MAX)
TJ(MAX)
=
=
Maximum device power dissipation
VOUT typical = 1.8V
Maximum continuous junction
temperature
IOUT
= 50 mA maximum
TA(MAX)
=
=
Maximum ambient temperature
6.2
Power Calculations
RθJA
Thermal resistance from
junction-to-ambient
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1703 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(2.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-4:
TJ(RISE) = PD(MAX) × RθJA
Where:
TJ(RISE)
=
Rise in device junction temperature
over the ambient temperature
EQUATION 6-1:
PTOTAL
=
=
Maximum device power dissipation
PLDO = (VIN(MAX)) – VOUT(MIN)) × IOUT(MAX ))
RθJA
Thermal resistance from junction to
ambient
Where:
PLDO
=
LDO Pass device internal power
dissipation
EQUATION 6-5:
VIN(MAX)
=
=
Maximum input voltage
TJ = TJ(RISE) + TA
VOUT(MIN)
LDO minimum output voltage
Where:
The maximum continuous operating junction
temperature specified for the MCP1703 is +125°C. To
estimate the internal junction temperature of the
MCP1703, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (RθJA). The thermal resistance from junction to
ambient for the SOT-23A pin package is estimated at
336°C/W.
TJ
=
=
Junction temperature
TJ(RISE)
Rise in device junction temperature
over the ambient temperature
TA
=
Ambient temperature
DS22049F-page 14
© 2011 Microchip Technology Inc.
MCP1703
6.3
Voltage Regulator
Junction Temperature Estimate
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
TJ = TJRISE + TA(MAX)
6.3.1
POWER DISSIPATION EXAMPLE
TJ = 91.3°C
Package
Maximum Package Power Dissipation at +40°C
Ambient Temperature Assuming Minimal Copper
Usage.
Package Type: SOT-23A
Input Voltage:
VIN = 2.7V to 4.8V
SOT-23A (336.0°C/Watt = RθJA
)
LDO Output Voltages and Currents
VOUT = 1.8V
PD(MAX) = (+125°C - 40°C) / 336°C/W
PD(MAX) = 253 milli-Watts
I
OUT = 50 mA
SOT-89 (153.3°C/Watt = RθJA
PD(MAX) = (+125°C - 40°C) / 153.3°C/W
D(MAX) = 0.554 Watts
SOT-223 (62.9°C/Watt = RθJA
)
Maximum Ambient Temperature
TA(MAX) = +40°C
P
Internal Power Dissipation
)
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PD(MAX) = (+125°C - 40°C) / 62.9°C/W
PD(MAX) = 1.35 Watts
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (4.8V - (0.97 x 1.8V)) x 50 mA
PLDO = 152.7 milli-Watts
6.4
Voltage Reference
The MCP1703 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1703 LDO. The low-cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1703 as a voltage
reference.
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (RθJA) is
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application”, (DS00792), for more information
regarding this subject.
Ratio Metric Reference
®
PIC
MCP1703
Microcontroller
2 µA Bias
V
IN
C
V
IN
V
GND
REF
OUT
C
1 µF
1 µF
OUT
ADO
AD1
Bridge Sensor
TJ(RISE) = PTOTAL x RqJA
TJRISE = 152.7 milli-Watts x 336.0°C/Watt
FIGURE 6-2:
Voltage Reference.
Using the MCP1703 as a
T
JRISE = 51.3°C
© 2011 Microchip Technology Inc.
DS22049F-page 15
MCP1703
6.5
Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1703. The internal
current limit of the MCP1703 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1703. The typical current limit for the
MCP1703 is 500 mA (TA +25°C).
DS22049F-page 16
© 2011 Microchip Technology Inc.
MCP1703
7.0
7.1
PACKAGING INFORMATION
Package Marking Information
Standard Options for SOT-23A and SOT-89
Extended Temp
Voltage * Symbol
3-Pin SOT-23A
Example:
Symbol
Voltage *
HM
HP
HQ
HR
HS
1.2
1.5
1.8
2.5
2.8
HT
HU
HV
HW
—
3.0
3.3
4.0
5.0
—
XXNN
HWNN
3-Lead SOT-89
Example:
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.
XXXYYWW
NNN
HM1014
256
Standard Options for SOT-223
Extended Temp
Symbol
Voltage *
Symbol
Voltage *
12
15
18
25
28
1.2
1.5
1.8
2.5
2.8
30
33
40
50
—
3.0
3.3
4.0
5.0
—
3-Lead SOT-223
Example:
Tab is GND
Tab is GND
Custom
MCP1703
15E1014
XXXXXXX
XXXYYWW
33
3.3
—
—
256
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.
NNN
1
2
3
Standard Options for 8-Lead DFN (2 x 3)
Extended Temp
Example:
8-Lead DFN (2 x 3)
Symbol
Voltage *
Symbol
Voltage *
XXX
YWW
NN
AAU
AAV
AAW
AAT
1.2
1.8
2.5
3.0
AAY
AFR
AAZ
—
3.3
4.0
5.0
—
AAU
014
25
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.
Legend: XX...X Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
*
)
e
3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2011 Microchip Technology Inc.
DS22049F-page 17
MCP1703
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DS22049F-page 18
© 2011 Microchip Technology Inc.
MCP1703
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2011 Microchip Technology Inc.
DS22049F-page 19
MCP1703
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ꢝꢔꢊꢃ .ꢇꢍꢈ#ꢌꢅꢈꢄꢇ #ꢈꢊ$ꢍꢍꢅꢆ#ꢈꢎꢉꢊ/ꢉꢓꢅꢈ!ꢍꢉ-ꢃꢆꢓ 0ꢈꢎꢋꢅꢉ ꢅꢈ ꢅꢅꢈ#ꢌꢅꢈꢏꢃꢊꢍꢇꢊꢌꢃꢎꢈ1ꢉꢊ/ꢉꢓꢃꢆꢓꢈꢕꢎꢅꢊꢃ%ꢃꢊꢉ#ꢃꢇꢆꢈꢋꢇꢊꢉ#ꢅ!ꢈꢉ#ꢈ
ꢌ##ꢎ+22---ꢁꢄꢃꢊꢍꢇꢊꢌꢃꢎꢁꢊꢇꢄ2ꢎꢉꢊ/ꢉꢓꢃꢆꢓ
D
D1
E
H
L
N
1
2
b
b1
b1
e
E1
e1
A
C
3ꢆꢃ#
ꢏꢙ44ꢙꢏ"ꢗ"ꢚꢕ
ꢂꢃꢄꢅꢆ ꢃꢇꢆꢈ4ꢃꢄꢃ#
ꢏꢙ5
ꢏꢔ7
5$ꢄ8ꢅꢍꢈꢇ%ꢈ4ꢅꢉ!
1ꢃ#ꢊꢌ
6$# ꢃ!ꢅꢈ4ꢅꢉ!ꢈ1ꢃ#ꢊꢌ
6,ꢅꢍꢉꢋꢋꢈ9ꢅꢃꢓꢌ#
6,ꢅꢍꢉꢋꢋꢈ<ꢃ!#ꢌ
ꢏꢇꢋ!ꢅ!ꢈ1ꢉꢊ/ꢉꢓꢅꢈ<ꢃ!#ꢌꢈꢉ#ꢈ)ꢉ ꢅ
ꢏꢇꢋ!ꢅ!ꢈ1ꢉꢊ/ꢉꢓꢅꢈ<ꢃ!#ꢌꢈꢉ#ꢈꢗꢇꢎ
6,ꢅꢍꢉꢋꢋꢈ4ꢅꢆꢓ#ꢌ
ꢗꢉ8ꢈ4ꢅꢆꢓ#ꢌ
.ꢇꢇ#ꢈ4ꢅꢆꢓ#ꢌ
4ꢅꢉ!ꢈꢗꢌꢃꢊ/ꢆꢅ
4ꢅꢉ!ꢈꢑꢈ<ꢃ!#ꢌ
5
ꢅ
ꢅꢀ
ꢔ
9
"
"ꢀ
ꢂ
ꢂꢀ
4
ꢊ
8
ꢛ
ꢀꢁ(ꢐꢈ)ꢕ*
ꢛꢁꢐꢐꢈ)ꢕ*
ꢀꢁꢖꢐ
ꢛꢁꢜꢖ
ꢑꢁꢑꢜ
ꢑꢁꢀꢛ
ꢖꢁꢛꢜ
ꢀꢁꢖꢐ
ꢐꢁꢒꢜ
ꢐꢁꢛ(
ꢐꢁꢖꢀ
ꢐꢁꢛ=
ꢀꢁ=ꢐ
ꢖꢁꢑ(
ꢑꢁ=ꢐ
ꢑꢁꢑꢜ
ꢖꢁ=ꢐ
ꢀꢁ:ꢛ
ꢀꢁꢑꢐ
ꢐꢁꢖꢖ
ꢐꢁ(=
ꢐꢁꢖ:
4ꢅꢉ! ꢈꢀꢈ?ꢈꢛꢈ<ꢃ!#ꢌ
8ꢀ
ꢝꢔꢊꢃꢉ
ꢀꢁ ꢂꢃꢄꢅꢆ ꢃꢇꢆ ꢈꢂꢈꢉꢆ!ꢈ"ꢈ!ꢇꢈꢆꢇ#ꢈꢃꢆꢊꢋ$!ꢅꢈꢄꢇꢋ!ꢈ%ꢋꢉ ꢌꢈꢇꢍꢈꢎꢍꢇ#ꢍ$ ꢃꢇꢆ ꢁꢈꢏꢇꢋ!ꢈ%ꢋꢉ ꢌꢈꢇꢍꢈꢎꢍꢇ#ꢍ$ ꢃꢇꢆ ꢈ ꢌꢉꢋꢋꢈꢆꢇ#ꢈꢅ&ꢊꢅꢅ!ꢈꢐꢁꢀꢑꢒꢈꢄꢄꢈꢎꢅꢍꢈ ꢃ!ꢅꢁ
ꢑꢁ ꢂꢃꢄꢅꢆ ꢃꢇꢆꢃꢆꢓꢈꢉꢆ!ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢃꢆꢓꢈꢎꢅꢍꢈꢔꢕꢏ"ꢈ'ꢀꢖꢁ(ꢏꢁ
)ꢕ*+ )ꢉ ꢃꢊꢈꢂꢃꢄꢅꢆ ꢃꢇꢆꢁꢈꢗꢌꢅꢇꢍꢅ#ꢃꢊꢉꢋꢋꢘꢈꢅ&ꢉꢊ#ꢈ,ꢉꢋ$ꢅꢈ ꢌꢇ-ꢆꢈ-ꢃ#ꢌꢇ$#ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢅ ꢁ
ꢏꢃꢊꢍꢇꢊꢌꢃꢎ ꢗꢅꢊꢌꢆꢇꢋꢇꢓꢘ ꢂꢍꢉ-ꢃꢆꢓ *ꢐꢖꢞꢐꢑꢜ)
DS22049F-page 20
© 2011 Microchip Technology Inc.
MCP1703
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
© 2011 Microchip Technology Inc.
DS22049F-page 21
MCP1703
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢈꢈꢆꢏꢐꢊꢈꢋꢑꢃꢆꢒꢓꢄꢑꢉꢋꢉꢊꢔꢓꢆꢕ%ꢗꢘꢆꢙꢍꢏꢒꢁꢚꢚꢀꢜ
ꢝꢔꢊꢃ .ꢇꢍꢈ#ꢌꢅꢈꢄꢇ #ꢈꢊ$ꢍꢍꢅꢆ#ꢈꢎꢉꢊ/ꢉꢓꢅꢈ!ꢍꢉ-ꢃꢆꢓ 0ꢈꢎꢋꢅꢉ ꢅꢈ ꢅꢅꢈ#ꢌꢅꢈꢏꢃꢊꢍꢇꢊꢌꢃꢎꢈ1ꢉꢊ/ꢉꢓꢃꢆꢓꢈꢕꢎꢅꢊꢃ%ꢃꢊꢉ#ꢃꢇꢆꢈꢋꢇꢊꢉ#ꢅ!ꢈꢉ#ꢈ
ꢌ##ꢎ+22---ꢁꢄꢃꢊꢍꢇꢊꢌꢃꢎꢁꢊꢇꢄ2ꢎꢉꢊ/ꢉꢓꢃꢆꢓ
D
b2
E1
E
3
2
1
e
e1
A2
c
A
φ
b
L
A1
3ꢆꢃ#
ꢏꢙ44ꢙꢏ"ꢗ"ꢚꢕ
ꢂꢃꢄꢅꢆ ꢃꢇꢆꢈ4ꢃꢄꢃ#
ꢏꢙ5
56ꢏ
ꢏꢔ7
5$ꢄ8ꢅꢍꢈꢇ%ꢈ4ꢅꢉ!
4ꢅꢉ!ꢈ1ꢃ#ꢊꢌ
6$# ꢃ!ꢅꢈ4ꢅꢉ!ꢈ1ꢃ#ꢊꢌ
6,ꢅꢍꢉꢋꢋꢈ9ꢅꢃꢓꢌ#
ꢕ#ꢉꢆ!ꢇ%%
ꢏꢇꢋ!ꢅ!ꢈ1ꢉꢊ/ꢉꢓꢅꢈ9ꢅꢃꢓꢌ#
6,ꢅꢍꢉꢋꢋꢈ<ꢃ!#ꢌ
ꢏꢇꢋ!ꢅ!ꢈ1ꢉꢊ/ꢉꢓꢅꢈ<ꢃ!#ꢌ
6,ꢅꢍꢉꢋꢋꢈ4ꢅꢆꢓ#ꢌ
4ꢅꢉ!ꢈꢗꢌꢃꢊ/ꢆꢅ
4ꢅꢉ!ꢈ<ꢃ!#ꢌ
5
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ꢔ
ꢔꢀ
ꢔꢑ
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ꢂ
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4
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M
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ꢐꢁꢀꢐ
ꢀꢁꢒꢐ
ꢒꢁꢛꢐ
ꢛꢁꢒꢐ
=ꢁꢒꢐ
ꢐꢁꢛ(
ꢐꢁ:ꢖ
ꢛꢁꢀꢐ
M
ꢐꢁꢐꢑ
ꢀꢁ(ꢐ
=ꢁꢒꢐ
ꢛꢁꢛꢐ
=ꢁꢛꢐ
ꢐꢁꢑꢛ
ꢐꢁ=ꢐ
ꢑꢁꢜꢐ
ꢐꢁꢒ(
ꢐꢝ
M
ꢀꢁ=ꢐ
ꢒꢁꢐꢐ
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=ꢁ(ꢐ
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ꢐꢁꢒ=
ꢛꢁꢐꢐ
M
ꢗꢉ8ꢈ4ꢅꢉ!ꢈ<ꢃ!#ꢌ
.ꢇꢇ#ꢈ4ꢅꢆꢓ#ꢌ
4ꢅꢉ!ꢈꢔꢆꢓꢋꢅ
M
ꢀꢐꢝ
ꢝꢔꢊꢃꢉ
ꢀꢁ ꢂꢃꢄꢅꢆ ꢃꢇꢆ ꢈꢂꢈꢉꢆ!ꢈ"ꢀꢈ!ꢇꢈꢆꢇ#ꢈꢃꢆꢊꢋ$!ꢅꢈꢄꢇꢋ!ꢈ%ꢋꢉ ꢌꢈꢇꢍꢈꢎꢍꢇ#ꢍ$ ꢃꢇꢆ ꢁꢈꢏꢇꢋ!ꢈ%ꢋꢉ ꢌꢈꢇꢍꢈꢎꢍꢇ#ꢍ$ ꢃꢇꢆ ꢈ ꢌꢉꢋꢋꢈꢆꢇ#ꢈꢅ&ꢊꢅꢅ!ꢈꢐꢁꢀꢑꢒꢈꢄꢄꢈꢎꢅꢍꢈ ꢃ!ꢅꢁ
ꢑꢁ ꢂꢃꢄꢅꢆ ꢃꢇꢆꢃꢆꢓꢈꢉꢆ!ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢃꢆꢓꢈꢎꢅꢍꢈꢔꢕꢏ"ꢈ'ꢀꢖꢁ(ꢏꢁ
)ꢕ*+ )ꢉ ꢃꢊꢈꢂꢃꢄꢅꢆ ꢃꢇꢆꢁꢈꢗꢌꢅꢇꢍꢅ#ꢃꢊꢉꢋꢋꢘꢈꢅ&ꢉꢊ#ꢈ,ꢉꢋ$ꢅꢈ ꢌꢇ-ꢆꢈ-ꢃ#ꢌꢇ$#ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢅ ꢁ
ꢏꢃꢊꢍꢇꢊꢌꢃꢎ ꢗꢅꢊꢌꢆꢇꢋꢇꢓꢘ ꢂꢍꢉ-ꢃꢆꢓ *ꢐꢖꢞꢐꢛꢑ)
DS22049F-page 22
© 2011 Microchip Technology Inc.
MCP1703
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢈꢈꢆꢏꢐꢊꢈꢋꢑꢃꢆꢒꢓꢄꢑꢉꢋꢉꢊꢔꢓꢆꢕ%ꢗꢘꢆꢙꢍꢏꢒꢁꢚꢚꢀꢜ
ꢝꢔꢊꢃ .ꢇꢍꢈ#ꢌꢅꢈꢄꢇ #ꢈꢊ$ꢍꢍꢅꢆ#ꢈꢎꢉꢊ/ꢉꢓꢅꢈ!ꢍꢉ-ꢃꢆꢓ 0ꢈꢎꢋꢅꢉ ꢅꢈ ꢅꢅꢈ#ꢌꢅꢈꢏꢃꢊꢍꢇꢊꢌꢃꢎꢈ1ꢉꢊ/ꢉꢓꢃꢆꢓꢈꢕꢎꢅꢊꢃ%ꢃꢊꢉ#ꢃꢇꢆꢈꢋꢇꢊꢉ#ꢅ!ꢈꢉ#ꢈ
ꢌ##ꢎ+22---ꢁꢄꢃꢊꢍꢇꢊꢌꢃꢎꢁꢊꢇꢄ2ꢎꢉꢊ/ꢉꢓꢃꢆꢓ
© 2011 Microchip Technology Inc.
DS22049F-page 23
MCP1703
#ꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆ%ꢐꢄꢈꢆ&ꢈꢄꢊ'ꢆꢝꢔꢆꢂꢃꢄꢅꢆꢇꢄꢌ(ꢄ)ꢃꢆꢕ"ꢖꢘꢆMꢆꢚ+ꢀ+,-$ꢆꢎꢎꢆꢗꢔꢅ.ꢆꢙ%&ꢝꢜ
ꢝꢔꢊꢃ .ꢇꢍꢈ#ꢌꢅꢈꢄꢇ #ꢈꢊ$ꢍꢍꢅꢆ#ꢈꢎꢉꢊ/ꢉꢓꢅꢈ!ꢍꢉ-ꢃꢆꢓ 0ꢈꢎꢋꢅꢉ ꢅꢈ ꢅꢅꢈ#ꢌꢅꢈꢏꢃꢊꢍꢇꢊꢌꢃꢎꢈ1ꢉꢊ/ꢉꢓꢃꢆꢓꢈꢕꢎꢅꢊꢃ%ꢃꢊꢉ#ꢃꢇꢆꢈꢋꢇꢊꢉ#ꢅ!ꢈꢉ#ꢈ
ꢌ##ꢎ+22---ꢁꢄꢃꢊꢍꢇꢊꢌꢃꢎꢁꢊꢇꢄ2ꢎꢉꢊ/ꢉꢓꢃꢆꢓ
e
D
b
N
N
L
K
E2
E
EXPOSED PAD
NOTE 1
NOTE 1
2
1
1
2
D2
BOTTOM VIEW
TOP VIEW
A
NOTE 2
A3
A1
3ꢆꢃ#
ꢏꢙ44ꢙꢏ"ꢗ"ꢚꢕ
ꢂꢃꢄꢅꢆ ꢃꢇꢆꢈ4ꢃꢄꢃ#
ꢏꢙ5
56ꢏ
:
ꢐꢁ(ꢐꢈ)ꢕ*
ꢐꢁꢜꢐ
ꢏꢔ7
5$ꢄ8ꢅꢍꢈꢇ%ꢈ1ꢃꢆ
1ꢃ#ꢊꢌ
6,ꢅꢍꢉꢋꢋꢈ9ꢅꢃꢓꢌ#
ꢕ#ꢉꢆ!ꢇ%%ꢈ
*ꢇꢆ#ꢉꢊ#ꢈꢗꢌꢃꢊ/ꢆꢅ
6,ꢅꢍꢉꢋꢋꢈ4ꢅꢆꢓ#ꢌ
6,ꢅꢍꢉꢋꢋꢈ<ꢃ!#ꢌ
5
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ꢐꢁꢐꢐ
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"
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*ꢇꢆ#ꢉꢊ#ꢈ<ꢃ!#ꢌ
*ꢇꢆ#ꢉꢊ#ꢈ4ꢅꢆꢓ#ꢌ
*ꢇꢆ#ꢉꢊ#ꢞ#ꢇꢞ"&ꢎꢇ ꢅ!ꢈ1ꢉ!
ꢂꢑ
"ꢑ
8
4
@
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ꢀꢁ(ꢐ
ꢐꢁꢑꢐ
ꢐꢁꢛꢐ
ꢐꢁꢑꢐ
ꢀꢁ((
ꢀꢁꢒ(
ꢐꢁꢛꢐ
ꢐꢁ(ꢐ
M
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M
ꢝꢔꢊꢃꢉ
ꢀꢁ 1ꢃꢆꢈꢀꢈ,ꢃ $ꢉꢋꢈꢃꢆ!ꢅ&ꢈ%ꢅꢉ#$ꢍꢅꢈꢄꢉꢘꢈ,ꢉꢍꢘ0ꢈ8$#ꢈꢄ$ #ꢈ8ꢅꢈꢋꢇꢊꢉ#ꢅ!ꢈ-ꢃ#ꢌꢃꢆꢈ#ꢌꢅꢈꢌꢉ#ꢊꢌꢅ!ꢈꢉꢍꢅꢉꢁ
ꢑꢁ 1ꢉꢊ/ꢉꢓꢅꢈꢄꢉꢘꢈꢌꢉ,ꢅꢈꢇꢆꢅꢈꢇꢍꢈꢄꢇꢍꢅꢈꢅ&ꢎꢇ ꢅ!ꢈ#ꢃꢅꢈ8ꢉꢍ ꢈꢉ#ꢈꢅꢆ! ꢁ
ꢛꢁ 1ꢉꢊ/ꢉꢓꢅꢈꢃ ꢈ ꢉ-ꢈ ꢃꢆꢓ$ꢋꢉ#ꢅ!ꢁ
ꢖꢁ ꢂꢃꢄꢅꢆ ꢃꢇꢆꢃꢆꢓꢈꢉꢆ!ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢃꢆꢓꢈꢎꢅꢍꢈꢔꢕꢏ"ꢈ'ꢀꢖꢁ(ꢏꢁ
)ꢕ*+ )ꢉ ꢃꢊꢈꢂꢃꢄꢅꢆ ꢃꢇꢆꢁꢈꢗꢌꢅꢇꢍꢅ#ꢃꢊꢉꢋꢋꢘꢈꢅ&ꢉꢊ#ꢈ,ꢉꢋ$ꢅꢈ ꢌꢇ-ꢆꢈ-ꢃ#ꢌꢇ$#ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢅ ꢁ
ꢚ".+ ꢚꢅ%ꢅꢍꢅꢆꢊꢅꢈꢂꢃꢄꢅꢆ ꢃꢇꢆ0ꢈ$ $ꢉꢋꢋꢘꢈ-ꢃ#ꢌꢇ$#ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢅ0ꢈ%ꢇꢍꢈꢃꢆ%ꢇꢍꢄꢉ#ꢃꢇꢆꢈꢎ$ꢍꢎꢇ ꢅ ꢈꢇꢆꢋꢘꢁ
ꢏꢃꢊꢍꢇꢊꢌꢃꢎ ꢗꢅꢊꢌꢆꢇꢋꢇꢓꢘ ꢂꢍꢉ-ꢃꢆꢓ *ꢐꢖꢞꢀꢑꢛ*
DS22049F-page 24
© 2011 Microchip Technology Inc.
MCP1703
#ꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆ%ꢐꢄꢈꢆ&ꢈꢄꢊ'ꢆꢝꢔꢆꢂꢃꢄꢅꢆꢇꢄꢌ(ꢄ)ꢃꢆꢕ"ꢖꢘꢆMꢆꢚ+ꢀ+,-$ꢆꢎꢎꢆꢗꢔꢅ.ꢆꢙ%&ꢝꢜ
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© 2011 Microchip Technology Inc.
DS22049F-page 25
MCP1703
NOTES:
DS22049F-page 26
© 2011 Microchip Technology Inc.
MCP1703
Revision A (June 2007)
APPENDIX A: REVISION HISTORY
• Original Release of this Document.
Revision F (February 2011)
The following is the list of modifications:
1. Added a new line to Output Voltage Regulation
in the DC Characteristics table.
2. Added Figure 2-30 and Figure 2-31.
3. Added a new line to the Tolerance field in the
Product Identification System section.
4. Added a new custom part to the Standard
Options for SOT-223 table in the Package
Marking Information section.
Revision E (November 2010)
The following is the list of modifications:
1. Updated the Thermal Resistance Typical value
for the SOT-89 package in the Junction
Temperature Estimate section.
Revision D (September 2009)
The following is the list of modifications:
1. Added the 8-Lead 2x3 DFN package.
2. Updated the Temperature Specification table.
3. Updated Table 3-1.
4. Added Section 3.4 “Exposed Thermal Pad
(EP)”.
5. Updated the Package Outline Drawings and the
information for the 8-Lead 2x3 DFN package.
6. Added the information for the 8-Lead 2x3 DFN
package in the Product Identification System
section.
Revision C (June 2009)
The following is the list of modifications:
1. Absolute Maximum Ratings: Updated this
section.
2. DC Characteristics table: Updated.
3. Temperature Specifications table: Updated.
4. Package Information: Update Package Outline
Drawings.
Revision B (February 2008)
The following is the list of modifications:
1. Updated Temperature Specifications table.
2. Updated Table 3-1.
3. Updated Section 5.2 “Output”.
4. Added SOT-223 Landing Pattern Outline
drawing.
© 2011 Microchip Technology Inc.
DS22049F-page 27
MCP1703
NOTES:
DS22049F-page 28
© 2011 Microchip Technology Inc.
MCP1703
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Examples:
PART NO.
Device
X-
XX
X
X
X/
XX
a)
b)
c)
d)
e)
f)
MCP1703T-1202E/XX: 1.2V Low Quiescent
LDO, Tape and Reel
MCP1703T-1502E/XX: 1.5V Low Quiescent
LDO, Tape and Reel
MCP1703T-1802E/XX: 1.8V Low Quiescent
LDO, Tape and Reel
MCP1703T-2502E/XX: 2.5V Low Quiescent
LDO, Tape and Reel
MCP1703T-2802E/XX: 2.8V Low Quiescent
LDO, Tape and Reel
MCP1703T-3002E/XX: 3.0V Low Quiescent
LDO, Tape and Reel
Tape
and Reel Voltage
Output Feature Tolerance Temp. Package
Code
Device:
MCP1703: 250 mA, 16V Low Quiescent Current LDO
Tape and Reel:
T
=
Tape and Reel
Output Voltage *: 12
=
=
=
=
=
=
=
=
=
1.2V “Standard”
1.5V “Standard”
1.8V “Standard”
2.5V “Standard”
2.8V “Standard”
3.0V “Standard”
3.3V “Standard”
4.0V “Standard”
5.0V “Standard”
15
18
25
28
30
33
40
50
g)
h)
i)
MCP1703T-3302E/XX: 3.3V Low Quiescent
LDO, Tape and Reel
MCP1703T-3602E/XX: 3.6V Low Quiescent
LDO, Tape and Reel
MCP1703T-4002E/XX: 4.0V Low Quiescent
LDO, Tape and Reel
j)
MCP1703T-5002E/XX: 5.0V Low Quiescent
LDO, Tape and Reel
*Contact factory for other output voltage options.
Extra Feature
Code:
0
=
Fixed
XX
=
=
=
=
CB for 3LD SOT-23A package
DB for 3LD SOT-223 package
MB for 3LD SOT-89 package
MC for 8LD DFN package.
Tolerance:
1
2
=
=
1.0% (Custom)
2.0% (Standard)
Temperature:
Package Type:
E
=
-40°C to +125°C
CB
DB
MB
MC
=
=
=
=
Plastic Small Outline Transistor (SOT-23A) 3-lead,
Plastic Small Outline Transistor (SOT-223) 3-lead,
Plastic Small Outline Transistor (SOT-89) 3-lead.
Plastic Dual Flat, No Lead Package (DFN) 2x3, 8-lead.
© 2011 Microchip Technology Inc.
DS22049F-page 29
MCP1703
NOTES:
DS22049F-page 30
© 2011 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
32
PIC logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2011, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-60932-941-9
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2011 Microchip Technology Inc.
DS22049F-page 31
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Web Address:
www.microchip.com
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Seoul
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-6578-300
Fax: 886-3-6578-370
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7830
Fax: 886-7-330-9305
Los Angeles
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Toronto
Mississauga, Ontario,
Canada
China - Zhuhai
Tel: 905-673-0699
Fax: 905-673-6509
Tel: 86-756-3210040
Fax: 86-756-3210049
02/18/11
DS22049F-page 32
© 2011 Microchip Technology Inc.
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