MCP1804T-1802I/DB [MICROCHIP]
1.8 V FIXED POSITIVE LDO REGULATOR, 2.7 V DROPOUT, PDSO3, PLASTIC, SOT-223, 4 PIN;
| 型号： | MCP1804T-1802I/DB |
| 厂家： | 
MICROCHIP |
| 描述： | 1.8 V FIXED POSITIVE LDO REGULATOR, 2.7 V DROPOUT, PDSO3, PLASTIC, SOT-223, 4 PIN 光电二极管 输出元件 调节器 |
| 文件： | 总36页 (文件大小：2122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCP1804
150 mA, 28V LDO Regulator With Shutdown
Features:
Description:
• 150 mA Output Current
The MCP1804 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 150 mA of
current while consuming only 50 µA of quiescent
current (typical, 1.8V VOUT 5.0V). The input
operating range is specified from 2.0V to 28.0V.
• Low Dropout Voltage, 260 mV Typical @ 20 mA,
VR = 3.3V
• 50 µA Typical Quiescent Current
• 0.01 µA Typical Shutdown Current
• Input Operating Voltage Range: 2.0V to 28.0V
The MCP1804 is capable of delivering 100 mA with
only 1300 mV (typical) of input to output voltage
differential (VOUT = 3.3V). The output voltage tolerance
of the MCP1804 at +25°C is a maximum of ±2%. Line
regulation is ±0.15% typical at +25°C.
• Standard Output Voltage Options
(1.8V, 2.5V, 3.0V, 3.3V, 5.0V, 10.0V, 12.0V)
• Output Voltage Accuracy: ±2%
• Output Voltages from 1.8V to 18.0V in 0.1V
Increments are Available upon Request
The LDO input and output are stable with 0.1 µF of
input and output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit with current foldback
to 40 mA (typical) provides short circuit protection.
A shutdown (SHDN) function allows the output to be
enabled or disabled. When disabled, the MCP1804
draws only 0.01 µA of current (typical).
• Stable with Ceramic Output Capacitors
• Current Limit Protection with Current Foldback
• Shutdown Pin
• High PSRR: 50 dB Typical @ 1 kHz
Applications:
Package options include the 3-lead SOT-89, 3-lead
SOT-223, 5-lead SOT-23 and 5-lead SOT-89.
• Cordless Phones, Wireless Communications
• PDAs, Notebook and Netbook Computers
• Digital Cameras
Package Types
• Microcontroller Power
SOT-89-3
SOT-223-3
• Car Audio and Navigation Systems
• Home Appliances
Related Literature:
(Top View)
2
(Top View)
2
• AN765, “Using Microchip’s Micropower LDOs”
(DS00765), Microchip Technology Inc., ©2002
1
3
1
3
• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs” (DS00766), Microchip Technology
Inc., ©2002
VIN
VOUT
VIN
GND
VOUT
GND
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”
(DS00792), Microchip Technology Inc., ©2001
SOT-89-5
SOT-23-5
VIN
5
VOUT
5
SHDN
4
NC
4
(Top View)
2
1
3
1
2
3
VIN GND NC
VOUT
GND SHDN
2009-2013 Microchip Technology Inc.
DS20002200D-page 1
MCP1804
Functional Block Diagram
VOUT
VIN
*
Thermal
Protection
SHDN
Shutdown
Control
Voltage
Reference
-
+
Current Limiter
Error Amplifier
GND
*5-Pin Versions Only
Typical Application Circuit
MCP1804
VIN
VOUT
5.0V @ 30 mA
VIN VOUT
5
4
1
SOT-23
GND
COUT
1 µF Ceramic
2
3
+
12V
Battery
SHDN
NC
CIN
1 µF
Ceramic
DS20002200D-page 2
2009-2013 Microchip Technology Inc.
MCP1804
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ........................................................................................................................................................... +30V
Output Current (Continuous)............................................................................................................. PD/(VIN - VOUT) mA
Output Current (Peak).......................................................................................................................................... 300 mA
Output Voltage ...................................................................................................................... (VSS - 0.3V) to (VIN + 0.3V)
SHDN Voltage.................................................................................................................................. (VSS - 0.3V) to +30V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VR + 2.0V, Note 1,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), VSHDN = VIN, TA = +25°C
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input / Output Characteristics
Input Operating
Voltage
VIN
2.0
—
28.0
V
Note 1
Input Quiescent
Current
IQ
—
—
IL = 0 mA
—
—
—
—
50
60
105
115
125
0.10
µA
µA
µA
µA
1.8V VOUT 5.0V
5.1V VOUT 12.0V
12.1V VOUT 18.0V
SHDN = 0V
65
Shutdown Current
ISHDN
IOUT
0.01
Maximum Output
Current
VIN = VR + 3.0V
VOUT < 3.0V
100
150
—
—
—
—
—
—
—
mA
mA
mA
mA
VOUT 3.0V
Current Limiter
ILIMIT
200
40
Output Short Circuit
Current
IOUT_SC
—
Output Voltage
Regulation
VOUT
VR - 2.0%
—
VR
VR + 2.0%
—
V
IOUT = 10 mA, Note 2
V
OUT Temperature
Coefficient
Note 1: The minimum VIN must meet one condition: VIN (VR + 2.0V).
TCVOUT
±100
ppm/°C IOUT = 20 mA,
-40°C TA 85°C, Note 3
2: VR is the nominal regulator output voltage with an input voltage of VIN = VR + 2.0V.
For example: VR = 1.8V, 2.5V, 3.0V, 3.3V, etc.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) * 106 / (VR * Temperature), VOUT-HIGH = highest voltage measured
over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing.
Changes in output voltage due to heating effects are determined using thermal regulation specification
TCVOUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
measured value with an applied input voltage of VR + 2.0V.
2009-2013 Microchip Technology Inc.
DS20002200D-page 3
MCP1804
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VR + 2.0V, Note 1,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), VSHDN = VIN, TA = +25°C
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Line Regulation
Load Regulation
VOUT/(VOUT-
XVIN)
—
—
(VR + 2V) VIN 28V, Note 1
—
—
0.05
0.15
0.10
0.30
%/V
%/V
IOUT = 5 mA
IOUT = 13 mA
VOUT/VOUT
IL = 1.0 mA to 50 mA, Note 4
1.8V VOUT 5.0V
5.1V VOUT 12.0V
12.1V VOUT 18.0V
IL = 20 mA
—
—
—
50
90
mV
mV
mV
110
180
175
275
Dropout Voltage
VDROPOUT
—
Note 1, Note 5
—
—
—
—
—
—
—
—
—
—
550
450
390
310
260
220
190
170
130
120
710
600
520
450
360
320
280
230
190
170
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
1.8V VR 1.9V
2.0V VR 2.1V
2.2V VR 2.4V
2.5V VR 2.9V
3.0V VR 3.9V
4.0V VR 4.9V
5.0V VR 6.4V
6.5V VR 8.0V
8.1V VR 10.0V
10.1V VR 18.0V
IL = 100 mA
—
—
—
—
—
—
—
—
—
—
—
1.1
2200
1900
1700
1500
1300
1100
1000
800
2700
2600
2200
1900
1700
1500
1300
1150
950
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
V
1.8V VR 1.9V
2.0V VR 2.1V
2.2V VR 2.4V
2.5V VR 2.9V
3.0V VR 3.9V
4.0V VR 4.9V
5.0V VR 6.4V
6.5V VR 8.0V
8.1V VR 10.0V
10.1V VR 18.0V
VIN = 28V
700
650
850
SHDN “H” Voltage
SHDN “L” Voltage
SHDN Current
VSHDN_H
VSHDN_L
ISHDN
—
VIN
0
—
—
0.35
0.1
V
VIN = 28V
-0.1
µA
VIN = 28V, VSHDN = GND or
VIN
Note 1: The minimum VIN must meet one condition: VIN (VR + 2.0V).
2: VR is the nominal regulator output voltage with an input voltage of VIN = VR + 2.0V.
For example: VR = 1.8V, 2.5V, 3.0V, 3.3V, etc.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) * 106 / (VR * Temperature), VOUT-HIGH = highest voltage measured
over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing.
Changes in output voltage due to heating effects are determined using thermal regulation specification
TCVOUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
measured value with an applied input voltage of VR + 2.0V.
DS20002200D-page 4
2009-2013 Microchip Technology Inc.
MCP1804
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VR + 2.0V, Note 1,
OUT = 1 µF (X7R), CIN = 1 µF (X7R), VSHDN = VIN, TA = +25°C
C
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Power Supply Ripple
Rejection Ratio
PSRR
—
50
—
dB
f = 1 kHz, IL = 20 mA,
VIN_AC = 0.5V pk-pk,
CIN = 0 µF
Thermal Shutdown
Protection
TSD
—
—
150
25
—
—
°C
°C
TJ = 150°C
Thermal Shutdown
Hysteresis
TSD
Note 1: The minimum VIN must meet one condition: VIN (VR + 2.0V).
2: VR is the nominal regulator output voltage with an input voltage of VIN = VR + 2.0V.
For example: VR = 1.8V, 2.5V, 3.0V, 3.3V, etc.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) * 106 / (VR * Temperature), VOUT-HIGH = highest voltage measured
over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing.
Changes in output voltage due to heating effects are determined using thermal regulation specification
TCVOUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its
measured value with an applied input voltage of VR + 2.0V.
TEMPERATURE SPECIFICATIONS
Parameters
Sym.
Min.
Typ.
Max. Units
Conditions
Temperature Ranges
Operating Temperature Range
TA
TJ
TA
-40
-40
-55
—
—
—
+85
+125
+125
°C
°C
°C
Operating Junction Temperature
Range
Storage Temperature Range
Thermal Package Resistance
Thermal Resistance, 3LD SOT-89
EIA/JEDEC® JESD51-7
FR-4 0.063 4-Layer Board
JA
JC
JA
JC
JA
JC
JA
JC
—
—
—
—
—
—
—
—
180
52
—
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
Thermal Resistance, 3LD SOT-223
Thermal Resistance, 5LD SOT-23
Thermal Resistance, 5LD SOT-89
62
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
15
256
81
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
180
52
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
2009-2013 Microchip Technology Inc.
DS20002200D-page 5
MCP1804
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), TA = +25°C,
VIN = VR + 2.0V.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
VIN = 2.8V
IN = 3.8V
VIN = 4.8V
V
TA = -40°C
TA = 25°C
A = 85°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
VR = 1.8V
VIN = SHDN = 4.8V
VR = 2.8V
0
50
100
150
200
250
300
0
50
100
150
200
250
300
Output Current (mA)
Output Current (mA)
FIGURE 2-1:
Output Voltage vs. Output
FIGURE 2-4:
Output Voltage vs. Output
Current.
Current.
6.0
5.0
4.0
6.0
5.0
4.0
3.0
1.0
TA = -40°C
A = 25°C
TA = 85°C
VIN = 6V
VIN = 7V
VIN = 8V
T
3.0
1.0
0.0
VR = 5.0V
VIN = SHDN = 8.0V
VR = 5V
0.0
0
0
50
100
150
200
250
300
50
100
150
200
250
300
Output Current (mA)
Output Current (mA)
FIGURE 2-2:
Output Voltage vs. Output
FIGURE 2-5:
Output Voltage vs. Output
Current.
Current.
14.0
12.0
10.0
8.0
14.0
12.0
10.0
8.0
TA = -40°C
TA = 25°C
VIN = 13V
VIN = 14V
T
A = 85°C
VIN = 15V
6.0
6.0
4.0
4.0
VIN = SHDN = 15V
2.0
2.0
V
R = 12 V
VR = 12V
0.0
0
0.0
0
50
100
150
200
250
300
50
100
150
200
250
300
Output Current (mA)
Output Current (mA)
FIGURE 2-3:
Output Voltage vs. Output
FIGURE 2-6:
Output Voltage vs. Output
Current.
Current.
DS20002200D-page 6
2009-2013 Microchip Technology Inc.
MCP1804
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), TA = +25°C,
VIN = VR + 2.0V.
2.1
2.0
1.9
1.8
1.6
1.5
2.1
2.0
1.9
1.8
1.6
1.5
VR = 1.8V
VR = 1.8V
IOUT = 1 mA
OUT = 10 mA
IOUT = 30 mA
I
IOUT = 1 mA
IOUT = 10 mA
IOUT = 30 mA
0.8
1.3
1.8
2.3
2.8
3.3
3.8
4
8
12
16
20
24
28
Input Voltage (V)
Input Voltage (V)
FIGURE 2-7:
Output Voltage vs. Input
FIGURE 2-10:
Output Voltage vs. Input
Voltage.
Voltage.
6.0
5.8
5.6
5.4
5.2
5.0
4.8
4.6
4.4
4.2
6.0
5.8
5.6
VR = 5V
VR = 5V
IOUT = 1 mA
5.4
5.2
5.0
4.8
4.6
4.4
4.2
4.0
IOUT = 10 mA
IOUT = 30 mA
IOUT = 1 mA
OUT = 10 mA
IOUT = 30 mA
I
4.0
8
4.0
4.5
5.0
Input Voltage (V)
5.5
6.0
12
16
20
24
28
Input Voltage (V)
FIGURE 2-8:
Output Voltage vs. Input
FIGURE 2-11:
Output Voltage vs. Input
Voltage.
Voltage.
15.0
14.0
13.0
12.0
11.0
10.0
15.0
14.0
13.0
12.0
10.0
9.0
VR = 12V
VR = 12V
IOUT = 1 mA
IOUT = 10 mA
IOUT = 30 mA
IOUT = 1 mA
OUT = 10 mA
IOUT = 30 mA
I
9.0
10
14
16
18
20
22
24
26
28
11
12
13
14
Input Voltage (V)
Input Voltage (V)
FIGURE 2-9:
Output Voltage vs. Input
FIGURE 2-12:
Output Voltage vs. Input
Voltage.
Voltage.
2009-2013 Microchip Technology Inc.
DS20002200D-page 7
MCP1804
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), TA = +25°C,
VIN = VR + 2.0V.
70
60
50
40
30
20
10
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VR = 1.8V
VR = 1.8V
TA = 85°C
TA = 25°C
TA = -40°C
TA = 85°C
TA = 25°C
TA = -40°C
0
25
50
75
100
125
150
0
4
8
12
16
20
24
28
Input Voltage (V)
Output Current (mA)
FIGURE 2-13:
Dropout Voltage vs. Load
FIGURE 2-16:
Supply Current vs. Input
Current.
Voltage.
4.0
3.5
3.0
70
60
50
40
30
20
10
0
VR = 5V
VR = 5V
TA = 85°C
TA = 25°C
TA = -40°C
2.5
2.0
1.5
1.0
0.5
0.0
TA = 85°C
T
A = 25°C
TA = -40°C
0
25
50
75
100
125
150
0
4
8
12
16
20
24
28
Input Voltage (V)
Output Current (mA)
FIGURE 2-14:
Dropout Voltage vs. Load
FIGURE 2-17:
Supply Current vs. Input
Current.
Voltage.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
70
60
50
40
30
20
10
0
VR = 12V
VR = 12V
TA = 85°C
TA = 25°C
TA = -40°C
TA = 85°C
TA = 25°C
T
A = -40°C
0
4
8
12
16
20
24
28
0
25
50
75
100
125
150
Output Current (mA)
Input Voltage (V)
FIGURE 2-15:
Dropout Voltage vs. Load
FIGURE 2-18:
Supply Current vs. Input
Current.
Voltage.
DS20002200D-page 8
2009-2013 Microchip Technology Inc.
MCP1804
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), TA = +25°C,
VIN = VR + 2.0V.
70
60
50
40
30
20
10
0
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
VR = 1.8V
VR = 1.8V
IOUT = 1 mA
IOUT = 10 mA
OUT = 20 mA
I
-40
-20
0
20
40
60
80
100
-50
-25
0
25
50
75
100
Ambient Temperature (°C)
Ambient Temperature (°C㸧
FIGURE 2-19:
Supply Current vs. Input
FIGURE 2-22:
Output Voltage vs. Ambient
Voltage.
Temperature.
70
60
50
40
30
20
10
0
5.20
5.15
5.10
5.05
5.00
4.95
4.90
4.85
VR = 5V
VR = 5V
IOUT = 1 mA
I
OUT = 10 mA
IOUT = 20 mA
4.80
-50
-25
0
25
50
75
100
-40
-20
0
20
40
60
80
100
Ambient Temperature (°C㸧
Ambient Temperature (°C)
FIGURE 2-20:
Supply Current vs. Input
FIGURE 2-23:
Output Voltage vs. Ambient
Voltage.
Temperature.
70
60
50
40
30
20
10
0
12.5
12.4
12.3
12.2
12.1
12.0
11.9
11.8
11.7
11.6
VR = 12V
VR = 12V
IOUT = 1 mA
IOUT = 10 mA
IOUT = 20 mA
11.5
-50
-40
-20
0
20
40
60
80
100
-25
0
25
50
75
100
Ambient Temperature (°C)
Ambient Temperature (°C㸧
FIGURE 2-21:
Supply Current vs. Input
FIGURE 2-24:
Output Voltage vs. Ambient
Voltage.
Temperature.
2009-2013 Microchip Technology Inc.
DS20002200D-page 9
MCP1804
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), TA = +25°C,
VIN = VR + 2.0V.
7.3
6.3
5.3
4.3
3.3
2.3
1.3
3.38
3.36
3.34
3.32
3.30
3.28
3.26
7.3
6.3
5.3
4.3
3.3
2.3
1.3
3.38
3.36
3.34
3.32
3.30
3.28
3.26
VR = 3.3V
IOUT = 30 mA
VIN
VR = 3.3V
IOUT = 1 mA
VIN
VOUT
VOUT
Time (1 ms/div)
FIGURE 2-25:
Dynamic Line Response.
FIGURE 2-28:
Dynamic Line Response.
9
8
7
6
5
4
3
5.08
9
8
7
6
5
4
3
5.08
VR = 5V
IOUT = 30 mA
VR = 5V
IOUT = 1 mA
VIN
5.06
5.04
5.02
5.00
4.98
4.96
5.06
VIN
5.04
5.02
5.00
4.98
4.96
VOUT
VOUT
Time (1 ms/div)
Time (1 ms/div)
FIGURE 2-26:
Dynamic Line Response.
FIGURE 2-29:
Dynamic Line Response.
16
15
14
13
12
11
10
12.08
16
15
14
13
12
11
10
12.08
VR = 12V
IOUT = 30 mA
VR = 12V
IOUT = 1 mA
VIN
VIN
12.06
12.04
12.02
12.00
11.98
11.96
12.06
12.04
12.02
12.00
11.98
11.96
VOUT
VOUT
Time (1 ms/div)
Time (1 ms/div)
FIGURE 2-27:
Dynamic Line Response.
FIGURE 2-30:
Dynamic Line Response.
DS20002200D-page 10
2009-2013 Microchip Technology Inc.
MCP1804
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), TA = +25°C,
VIN = VR + 2.0V.
3.6
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
2.7
2.6
150
120
90
60
30
0
8
6
8
7
6
5
4
3
2
1
0
VR = 3.3V
VIN
VOUT
4
2
0
VOUT
-2
-4
-6
-8
IOUT
VR = 3.3V
IOUT = 1 mA
Time (1 ms/div)
Time (1 ms/div)
FIGURE 2-31:
Dynamic Load Response.
FIGURE 2-34:
Start-up Response.
8
6
8
5.4
5.3
5.2
5.1
5.0
4.9
4.8
4.7
4.6
4.5
4.4
150
VR = 5V
VIN
7
6
5
4
3
2
1
0
120
4
VOUT
2
90
VOUT
0
60
-2
-4
-6
-8
IOUT
VR = 3.3V
IOUT = 30 mA
30
0
Time (1 ms/div)
Time (1 ms/div)
FIGURE 2-32:
Dynamic Load Response.
FIGURE 2-35:
Start-up Response.
12.6
12.4
12.2
12.0
11.8
11.6
11.2
11.0
10.8
10.6
150
8
6
8
7
6
5
4
3
2
1
0
VR = 12V
VIN
120
VOUT
4
2
90
VOUT
0
-2
-4
-6
-8
IOUT
VR = 5.0V
IOUT = 1 mA
30
0
Time (1 ms/div)
Time (1 ms/div)
FIGURE 2-33:
Dynamic Load Response.
FIGURE 2-36:
Start-up Response.
2009-2013 Microchip Technology Inc.
DS20002200D-page 11
MCP1804
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), TA = +25°C,
VIN = VR + 2.0V.
8
6
8
7
6
5
4
3
2
1
0
8
6
8
7
6
5
4
2
1
0
VIN
SHDN
4
4
2
2
VOUT
0
VOUT
0
-4
-6
-8
-2
-4
-6
-8
VR = 5.0V
IOUT = 30 mA
VR = 3.3V
IOUT = 1 mA
Time (1 ms/div)
Time (1 ms/div)
FIGURE 2-37:
Start-up Response.
FIGURE 2-40:
SHDN Response.
15
10
5
18
15
12
9
8
6
8
7
6
5
4
3
2
1
0
VIN
SHDN
VOUT
4
2
VOUT
0
0
-2
-4
-6
-8
-5
6
VR = 12V
IOUT = 1 mA
VR = 5V
IOUT = 1 mA
-10
-15
3
0
Time (1 ms/div)
Time (1 ms/div)
FIGURE 2-38:
Start-up Response.
FIGURE 2-41:
SHDN Response.
15
10
5
18
15
10
5
18
15
12
9
VIN
SHDN
VOUT
15
12
9
VOUT
0
0
-5
6
-5
6
VR = 12V
IOUT = 30 mA
VR = 12V
IOUT = 1 mA
-10
-15
3
-10
-15
3
0
0
Time (1 ms/div)
Time (1 ms/div)
FIGURE 2-39:
Start-up Response.
FIGURE 2-42:
SHDN Response.
DS20002200D-page 12
2009-2013 Microchip Technology Inc.
MCP1804
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), TA = +25°C,
VIN = VR + 2.0V.
90
80
70
60
50
40
30
20
10
0
8
6
8
7
6
5
4
3
2
1
0
VOUT = 3.3V
CIN = 0
SHDN
IOUT = 1 mA
VIN_AC = 0.5Vpk-pk
4
2
VOUT
0
-2
-4
-6
-8
VR = 3.3V
IOUT = 30 mA
0.01
0.1
1
10
100
Time (1 ms/div)
Frequency (kHz)
FIGURE 2-43:
SHDN Response.
FIGURE 2-46:
PSRR 3.3V @ 1 mA.
90
80
70
60
50
40
20
10
8
6
8
7
6
5
4
3
2
1
0
VOUT = 5V
CIN = 0
SHDN
VOUT
IOUT = 1 mA
VIN_AC = 0.5Vpk-pk
4
2
0
-2
-4
-6
-8
VR = 5V
IOUT = 30 mA
0
0.01
0.1
1
10
100
Frequency (kHz)
Time (1 ms/div)
FIGURE 2-44:
SHDN Response.
FIGURE 2-47:
PSRR 5.0V @ 1 mA.
15
10
5
18
15
12
9
90
80
70
60
50
40
30
20
10
VOUT = 12V
SHDN
VOUT
C
IN = 0
IOUT = 1 mA
IN_AC = 0.5Vpk-pk
V
0
-5
6
VR = 12V
IOUT = 30 mA
-10
-15
3
0
0.01
0
0.1
1
10
100
Time (1 ms/div)
Frequency (kHz)
FIGURE 2-45:
SHDN Response.
FIGURE 2-48:
PSRR 12.0V @ 1 mA.
2009-2013 Microchip Technology Inc.
DS20002200D-page 13
MCP1804
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), TA = +25°C,
VIN = VR + 2.0V.
80
90
VOUT = 5V
VIN = 8V
VOUT = 3.3V
CIN = 0
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
IOUT = 30 mA
VIN_AC = 0.5Vpk-pk
0
25
50
75
100
125
150
0.01
0.1
1
10
100
Output Current (mA)
Frequency (kHz)
FIGURE 2-49:
PSRR 3.3V @ 30 mA.
FIGURE 2-52:
Ground Current vs. Output
Current.
80
70
60
50
40
30
20
90
80
70
60
50
40
30
20
10
VOUT = 5V
CIN = 0
VOUT = 12V
VIN = 15V
IOUT = 30 mA
VIN_AC = 0.5Vpk-pk
0
0.01
0
25
50
75
100
125
150
0.1
1
10
100
Output Current (mA)
Frequency (kHz)
FIGURE 2-53:
Ground Current vs. Output
FIGURE 2-50:
PSRR 5.0V @ 30 mA.
Current.
100
90
80
70
60
50
40
30
90
80
70
60
50
40
30
20
10
VOUT = 12V
VOUT = 15V
VIN = 18V
C
IN = 0
IOUT = 30 mA
IN_AC = 0.5Vp-p
V
0
0.01
0
25
50
75
100
125
150
0.1
1
10
100
Output Current (mA)
Frequency (kHz)
FIGURE 2-54:
Ground Current vs. Output
FIGURE 2-51:
PSRR 12V @ 30 mA.
Current.
DS20002200D-page 14
2009-2013 Microchip Technology Inc.
MCP1804
Note: Unless otherwise indicated: COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), TA = +25°C,
VIN = VR + 2.0V.
10.00
V
V
= 3.3V
= 5.0V
R
IN
I
= 50 mA
OUT
1.00
0.10
0.01
0.1
10
0.01
1
100
Frequency (kHz)
FIGURE 2-55:
Output Noise vs. Frequency.
2009-2013 Microchip Technology Inc.
DS20002200D-page 15
MCP1804
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
.
TABLE 3-1:
MCP1804 PIN FUNCTION TABLE
MCP1804
Symbol
Description
SOT-23-5
SOT-89-5
SOT-89-3
SOT-223-3
1
2
3
4
5
5
3
2, TAB
—
3
2, TAB
—
VIN
GND
NC
Unregulated Supply Voltage
Ground Terminal
2, TAB
4
3
1
No connection
—
—
SHDN
VOUT
Shutdown
1
1
Regulated Voltage Output
3.1
Unregulated Input Voltage (V )
3.4
Regulated Output Voltage (V
)
IN
OUT
Connect VIN to the input unregulated source voltage.
Like all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 0.1 µF to 1.0 µF of capacitance will
ensure stable operation of the LDO circuit. The type of
capacitor used can be ceramic, tantalum or aluminum
electrolytic. The low ESR characteristics of the ceramic
will yield better noise and PSRR performance at high
frequency.
Connect VOUT to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO VOUT pin as is practical.
The current flowing out of this pin is equal to the DC
load current. For most applications, 0.1 µF to 1.0 µF of
capacitance will ensure stable operation of the LDO
circuit. Larger values may be used to improve dynamic
load response. The type of capacitor used can be
ceramic, tantalum or aluminum electrolytic. The low
ESR characteristics of the ceramic will yield better
noise and PSRR performance at high frequency.
3.2
Ground Terminal (GND)
3.5
No Connect (NC)
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current (50 to 60 µA typical) flows
out of this pin; there is no high current. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
No internal connection. The pins marked NC are true
“No Connect” pins.
3.3
Shutdown Input (SHDN)
The SHDN input is used to turn the LDO output voltage
on and off. When the SHDN input is at a logic-high
level, the LDO output voltage is enabled. When the
SHDN input is pulled to a logic-low level, the LDO
output voltage is disabled and the LDO enters a low
quiescent current shutdown state where the typical
quiescent current is 0.01 µA. The SHDN pin does not
have an internal pull-up or pull-down resistor. The
SHDN pin must be connected to either VIN or GND to
prevent the device from becoming unstable.
DS20002200D-page 16
2009-2013 Microchip Technology Inc.
MCP1804
4.4
Output Capacitor
4.0
4.1
DETAILED DESCRIPTION
Output Regulation
The MCP1804 requires a minimum output capacitance
of 0.1 µF to 1.0 µF for output voltage stability. Ceramic
capacitors are recommended because of their size,
cost and environmental robustness qualities.
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal bandgap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1).
Aluminum-electrolytic and tantalum capacitors can be
used on the LDO output as well. The output capacitor
should be located as close to the LDO output as is
practical. Ceramic materials X7R and X5R have low
temperature coefficients.
Larger LDO output capacitors can be used with the
MCP1804 to improve dynamic performance and power
supply ripple rejection performance. Aluminum-
electrolytic capacitors are not recommended for low
temperature applications of < -25°C.
4.2
Overcurrent
The MCP1804 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event that the load current reaches the current
limiter level of 200 mA (typical), the current limiter
circuit will operate and the output voltage will drop. As
the output voltage drops, the internal current foldback
circuit will further reduce the output voltage causing the
output current to decrease. When the output is shorted,
a typical output current of 50 mA flows.
4.5
Input Capacitor
Low input source impedance is necessary for the LDO
output to operate properly. When operating from
batteries or in applications with long lead length
(> 10 inches) between the input source and the LDO,
some input capacitance is recommended. A minimum
of 0.1 µF to 1.0 µF is recommended for most
applications.
4.3
Shutdown
For applications that have output step load
requirements, the input capacitance of the LDO is very
important. The input capacitance provides the LDO
with a good local low-impedance source to pull the
transient currents from in order to respond quickly to
the output load step. For good step response
performance, the input capacitor should be of
equivalent or higher value than the output capacitor.
The capacitor should be placed as close to the input of
the LDO as is practical. Larger input capacitors will also
help reduce any high-frequency noise on the input and
output of the LDO and reduce the effects of any
inductance that exists between the input source
voltage and the input capacitance of the LDO.
The SHDN input is used to turn the LDO output voltage
on and off. When the SHDN input is at a logic-high
level, the LDO output voltage is enabled. When the
SHDN input is pulled to a logic-low level, the LDO
output voltage is disabled and the LDO enters a low
quiescent current shutdown state where the typical
quiescent current is 0.01 µA. The SHDN pin does not
have an internal pull-up or pull-down resistor. Therefore
the SHDN pin must be pulled either high or low to
prevent the device from becoming unstable. The
internal device current will increase when the device is
operational and current flows through the pull-up or
pull-down resistor to the SHDN pin internal logic. The
SHDN pin internal logic is equivalent to an inverter
input.
4.6
Thermal Shutdown
The MCP1804 thermal shutdown circuitry protects the
device when the internal junction temperature reaches
the typical thermal limit value of +150°C. The thermal
limit shuts off the output drive transistor. Device output
will resume when the internal junction temperature falls
below the thermal limit value by an amount equal to the
thermal limit hysteresis value of +25°C.
2009-2013 Microchip Technology Inc.
DS20002200D-page 17
MCP1804
VOUT
VIN
*
Thermal
Protection
SHDN
Shutdown
Control
Voltage
Reference
-
+
Current Limiter
Error Amplifier
GND
*5-Pin Versions Only
FIGURE 4-1: Block Diagram.
DS20002200D-page 18
2009-2013 Microchip Technology Inc.
MCP1804
5.0
FUNCTIONAL DESCRIPTION
The MCP1804 CMOS linear regulator is intended for
applications that need low current consumption while
maintaining output voltage regulation. The operating
continuous load of the MCP1804 ranges from 0 mA to
150 mA. The input operating voltage ranges from 2.0V
to 28.0V, making it capable of operating from a single
12V battery or single and multiple Li-Ion cell batteries.
5.1
Input
The input of the MCP1804 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance
(< 10) is needed to prevent the input impedance from
causing the LDO to become unstable. The size and
type of the capacitor needed depend heavily on the
input source type (battery, power supply) and the
output current range of the application. For most
applications, a 0.1 µF ceramic capacitor will be
sufficient to ensure circuit stability. Larger values can
be used to improve circuit AC performance.
5.2
Output
The maximum rated continuous output current for the
MCP1804 is 150 mA.
A minimum output capacitance of 0.1 µF to 1.0 µF is
required for small signal stability in applications that
have up to 150 mA output current capability. The
capacitor type can be ceramic, tantalum or aluminum
electrolytic.
2009-2013 Microchip Technology Inc.
DS20002200D-page 19
MCP1804
NOTES:
DS20002200D-page 20
2009-2013 Microchip Technology Inc.
MCP1804
EQUATION 6-2:
TJMAX = PTOTAL RJA + TAMAX
6.0
6.1
APPLICATION CIRCUITS AND
ISSUES
Where:
Typical Application
T
=
Maximum continuous junction
J(MAX)
The MCP1804 is most commonly used as a voltage
regulator. Its low quiescent current and wide input
voltage make it ideal for Li-Ion and 12V battery-
powered applications.
temperature
P
=
=
Total power dissipation of the device
TOTAL
R
Thermal resistance from junction to
ambient
JA
T
=
Maximum ambient temperature
A(MAX)
NC
SHDN
The maximum power dissipation capability for a
package can be calculated given the junction-
to-ambient thermal resistance and the maximum
ambient temperature for the application. The following
equation can be used to determine the package
maximum internal power dissipation.
GND
VOUT
1.8V
VIN
4.2V
V
V
OUT
IN
IOUT
50 mA
CIN
1 µF
Ceramic
COUT
1 µF Ceramic
EQUATION 6-3:
TJMAX – TAMAX
FIGURE 6-1:
Typical Application Circuit.
PDMAX = ---------------------------------------------------
RJA
6.1.1
Package Type
Input Voltage Range = 3.8V to 4.2V
APPLICATION INPUT CONDITIONS
Where:
= SOT-23
P
=
=
Maximum power dissipation of the
device
D(MAX)
T
Maximum continuous junction
temperature
VIN maximum
VOUT typical
IOUT
= 4.6V
J(MAX)
= 1.8V
T
=
=
Maximum ambient temperature
A(MAX)
= 50 mA maximum
R
Thermal resistance from junction to
ambient
JA
6.2
6.2.1
Power Calculations
POWER DISSIPATION
EQUATION 6-4:
TJRISE = PDMAX RJA
The internal power dissipation of the MCP1804 is a
function of input voltage, output voltage and output
current. The power dissipation resulting from the
quiescent current draw is so low it is insignificant
(50.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
Where:
T
=
Rise in the device’s junction
temperature over the ambient
temperature
J(RISE)
D(MAX)
P
=
=
Maximum power dissipation of the
device
EQUATION 6-1:
R
Thermal resistance from junction to
ambient
JA
PLDO = VINMAX – VOUTMIN IOUT
Where:
EQUATION 6-5:
TJ = TJRISE + TA
P
=
Internal power dissipation of the LDO
Pass device
LDO
Where:
V
=
=
Maximum input voltage
IN(MAX)
T
=
=
Junction Temperature
V
Minimum output voltage of the LDO
J
OUT(MIN)
T
Rise in the device’s junction
temperature over the ambient
temperature
J(RISE)
The maximum continuous operating temperature
specified for the MCP1804 is +85°C. To estimate the
internal junction temperature of the MCP1804, the total
internal power dissipation is multiplied by the thermal
resistance from junction to ambient (RJA). The thermal
resistance from junction to ambient for the SOT-23 pin
package is estimated at 256°C/W.
T
=
Ambient temperature
A
2009-2013 Microchip Technology Inc.
DS20002200D-page 21
MCP1804
6.3
Voltage Regulator
TJ = TJ(RISE) + TA(MAX)
TJ = 76.3°C
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation resulting from ground current is small
enough to be neglected.
Maximum Package Power Dissipation at +25°C
Ambient Temperature (minimum PCB footprint)
SOT-23 (256°C/Watt = RJA):
6.3.1
POWER DISSIPATION EXAMPLE
PD(MAX) = (125°C - 25°C) / 256°C/W
Package:
PD(MAX) = 390 milli-Watts
Package Type = SOT-23
Input Voltage:
SOT-89 (180°C/Watt = RJA):
PD(MAX) = (125°C - 25°C) / 180°C/W
VIN = 3.8V to 4.6V
PD(MAX) = 555 milli-Watts
LDO Output Voltages and Currents:
VOUT = 1.8V
6.4
Voltage Reference
IOUT = 50 mA
The MCP1804 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1804 LDO. The low-cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1804 as a voltage
reference.
Maximum Ambient Temperature:
TA(MAX) = +40°C
Internal Power Dissipation:
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO(MAX) = (4.6V - (0.98 x 1.8V)) x 50 mA
PLDO(MAX) = 141.8 milli-Watts
6.3.1.1
Device Junction Temperature Rise
Ratio Metric Reference
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The thermal
resistance from junction to ambient (RJA) is derived
from an EIA/JEDEC standard for measuring thermal
resistance for small surface mount packages. The EIA/
JEDEC specification is JESD51-7, “High Effective
Thermal Conductivity Test Board for Leaded Surface
Mount Packages”. The standard describes the test
method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application” (DS00792), for more information regarding
this subject.
®
MCP1804
PICmicro
Microcontroller
50 µA Bias
V
IN
C
1 µF
IN
V
REF
V
OUT
C
1 µF
OUT
GND
AD0
AD1
Bridge Sensor
FIGURE 6-2:
Voltage Reference.
Using the MCP1804 as a
6.5
Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 150 mA
maximum specification of the MCP1804. The internal
current limit of the MCP1804 will prevent high peak
load demands from causing non-recoverable damage.
The 150 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
150 mA or the maximum power dissipation of the
packaged device, pulsed higher load currents can be
applied to the MCP1804. The typical current limit for
the MCP1804 is 200 mA (TA = +25°C).
TJ(RISE) = PTOTAL x RJA
TJ(RISE) = 141.8 milli-Watts x 256.0°C/Watt
TJ(RISE) = 36.3°C
6.3.1.2
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
DS20002200D-page 22
2009-2013 Microchip Technology Inc.
MCP1804
7.0
7.1
PACKAGING INFORMATION
Package Marking Information
3-Lead SOT-223
Example
84K25
Part Number
Code
MCP1804T-1802I/DB
MCP1804T-2502I/DB
MCP1804T-3002I/DB
MCP1804T-3302I/DB
MCP1804T-5002I/DB
MCP1804T-A002I/DB
MCP1804T-C002I/DB
84KXX
84TXX
84ZXX
852XX
85MXX
879XX
87ZXX
3-Lead SOT-89
Example
Part Number
Code
84K
25
MCP1804T-1802I/MB
MCP1804T-2502I/MB
MCP1804T-3002I/MB
MCP1804T-3302I/MB
MCP1804T-5002I/MB
MCP1804T-A002I/MB
MCP1804T-C002I/MB
84KXX
84TXX
84ZXX
852XX
85MXX
879XX
87ZXX
5-Lead SOT-23
Example
80K25
Part Number
Code
MCP1804T-1802I/OT
MCP1804T-2502I/OT
MCP1804T-3002I/OT
MCP1804T-3302I/OT
MCP1804T-5002I/OT
MCP1804T-A002I/OT
MCP1804T-C002I/OT
80KXX
80TXX
80ZXX
812XX
81MXX
839XX
83ZXX
Legend: XX...X Customer-specific information
Y
Year code (last digit of calendar year)
YY
Year code (last 2 digits of calendar year)
WW
NNN
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e
3
e
3
*
)
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2009-2013 Microchip Technology Inc.
DS20002200D-page 23
MCP1804
5-Lead SOT-89
Example
Part Number
Code
MCP1804T-1802I/MT
MCP1804T-2502I/MT
MCP1804T-3002I/MT
MCP1804T-3302I/MT
MCP1804T-5002I/MT
MCP1804T-A002I/MT
MCP1804T-C002I/MT
80KXX
80TXX
80ZXX
812XX
81MXX
839XX
83ZXX
80K
25
DS20002200D-page 24
2009-2013 Microchip Technology Inc.
MCP1804
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢈꢈꢆꢏꢐꢊꢈꢋꢑꢃꢆꢒꢓꢄꢑꢉꢋꢉꢊꢔꢓꢆꢕꢖꢗꢘꢆꢙꢍꢏꢒꢁꢚꢚꢀꢛ
ꢜꢔꢊꢃꢝ ꢧꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢨꢊꢚꢅꢉꢋꢓꢊꢦꢃꢆꢚꢇꢩꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢪꢊꢎꢨꢊꢚꢃꢆꢚꢉꢜꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ
ꢒꢍꢍꢔꢢꢫꢫꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢫꢔꢊꢎꢨꢊꢚꢃꢆꢚ
D
b2
E1
E
3
2
1
e
e1
A2
c
A
φ
b
L
A1
ꢬꢆꢃꢍꢇꢕꢭꢮꢮꢭꢕꢌꢣꢌꢯꢜ
ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢉꢮꢃꢄꢃꢍꢇ
ꢕꢭꢰ
ꢰꢱꢕ
ꢕꢛꢲ
ꢰꢐꢄꢳꢅꢓꢉꢈꢑꢉꢮꢅꢊꢋꢇꢰ
ꢮꢅꢊꢋꢉꢪꢃꢍꢎꢒ
ꢱꢐꢍꢇꢃꢋꢅꢉꢮꢅꢊꢋꢉꢪꢃꢍꢎꢒ
ꢱꢥꢅꢓꢊꢏꢏꢉꢶꢅꢃꢚꢒꢍ
ꢜꢍꢊꢆꢋꢈꢑꢑ
ꢕꢈꢏꢋꢅꢋꢉꢪꢊꢎꢨꢊꢚꢅꢉꢶꢅꢃꢚꢒꢍ
ꢱꢥꢅꢓꢊꢏꢏꢉꢹꢃꢋꢍꢒ
ꢕꢈꢏꢋꢅꢋꢉꢪꢊꢎꢨꢊꢚꢅꢉꢹꢃꢋꢍꢒ
ꢱꢥꢅꢓꢊꢏꢏꢉꢮꢅꢆꢚꢍꢒ
ꢮꢅꢊꢋꢉꢣꢒꢃꢎꢨꢆꢅꢇꢇ
ꢮꢅꢊꢋꢉꢹꢃꢋꢍꢒ
ꢴ
ꢅ
ꢅꢀ
ꢛ
ꢛꢀ
ꢛꢘ
ꢌ
ꢌꢀ
ꢂ
ꢎ
ꢳ
ꢳꢘ
ꢮ
ꢀ
ꢘꢁꢴꢗꢉꢠꢜꢡ
ꢞꢁꢵꢗꢉꢠꢜꢡ
ꢷ
ꢷ
ꢀꢁꢸꢗ
ꢗꢁꢀꢗ
ꢀꢁꢙꢗ
ꢙꢁꢴꢗ
ꢴꢁꢙꢗ
ꢵꢁꢙꢗ
ꢗꢁꢴꢟ
ꢗꢁꢸꢞ
ꢴꢁꢀꢗ
ꢷ
ꢗꢁꢗꢘ
ꢀꢁꢟꢗ
ꢵꢁꢙꢗ
ꢴꢁꢴꢗ
ꢵꢁꢴꢗ
ꢗꢁꢘꢴ
ꢗꢁꢵꢗ
ꢘꢁꢺꢗ
ꢗꢁꢙꢟ
ꢗꢻ
ꢷ
ꢀꢁꢵꢗ
ꢙꢁꢗꢗ
ꢴꢁꢟꢗ
ꢵꢁꢟꢗ
ꢗꢁꢴꢗ
ꢗꢁꢙꢵ
ꢴꢁꢗꢗ
ꢷ
ꢣꢊꢳꢉꢮꢅꢊꢋꢉꢹꢃꢋꢍꢒ
ꢧꢈꢈꢍꢉꢮꢅꢆꢚꢍꢒ
ꢮꢅꢊꢋꢉꢛꢆꢚꢏꢅ
ꢷ
ꢀꢗꢻ
ꢜꢔꢊꢃꢉꢝ
ꢀꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢇꢉꢂꢉꢊꢆꢋꢉꢌꢀꢉꢋꢈꢉꢆꢈꢍꢉꢃꢆꢎꢏꢐꢋꢅꢉꢄꢈꢏꢋꢉꢑꢏꢊꢇꢒꢉꢈꢓꢉꢔꢓꢈꢍꢓꢐꢇꢃꢈꢆꢇꢁꢉꢕꢈꢏꢋꢉꢑꢏꢊꢇꢒꢉꢈꢓꢉꢔꢓꢈꢍꢓꢐꢇꢃꢈꢆꢇꢉꢇꢒꢊꢏꢏꢉꢆꢈꢍꢉꢅꢖꢎꢅꢅꢋꢉꢗꢁꢀꢘꢙꢉꢄꢄꢉꢔꢅꢓꢉꢇꢃꢋꢅꢁ
ꢘꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢃꢆꢚꢉꢊꢆꢋꢉꢍꢈꢏꢅꢓꢊꢆꢎꢃꢆꢚꢉꢔꢅꢓꢉꢛꢜꢕꢌꢉꢝꢀꢞꢁꢟꢕꢁ
ꢠꢜꢡꢢ ꢠꢊꢇꢃꢎꢉꢂꢃꢄꢅꢆꢇꢃꢈꢆꢁꢉꢣꢒꢅꢈꢓꢅꢍꢃꢎꢊꢏꢏꢤꢉꢅꢖꢊꢎꢍꢉꢥꢊꢏꢐꢅꢉꢇꢒꢈꢦꢆꢉꢦꢃꢍꢒꢈꢐꢍꢉꢍꢈꢏꢅꢓꢊꢆꢎꢅꢇꢁ
ꢕꢃꢎꢓꢈꢎꢒꢃꢔ ꢣꢅꢎꢒꢆꢈꢏꢈꢚꢤ ꢂꢓꢊꢦꢃꢆꢚ ꢡꢗꢞꢼꢗꢴꢘꢠ
2009-2013 Microchip Technology Inc.
DS20002200D-page 25
MCP1804
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢈꢈꢆꢏꢐꢊꢈꢋꢑꢃꢆꢒꢓꢄꢑꢉꢋꢉꢊꢔꢓꢆꢕꢖꢗꢘꢆꢙꢍꢏꢒꢁꢚꢚꢀꢛ
ꢜꢔꢊꢃꢝ ꢧꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢨꢊꢚꢅꢉꢋꢓꢊꢦꢃꢆꢚꢇꢩꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢪꢊꢎꢨꢊꢚꢃꢆꢚꢉꢜꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ
ꢒꢍꢍꢔꢢꢫꢫꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢫꢔꢊꢎꢨꢊꢚꢃꢆꢚ
DS20002200D-page 26
2009-2013 Microchip Technology Inc.
MCP1804
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢈꢈꢆꢏꢐꢊꢈꢋꢑꢃꢆꢒꢓꢄꢑꢉꢋꢉꢊꢔꢓꢆꢞꢃꢄꢅꢃꢓꢆꢕꢟꢗꢘꢆꢙꢍꢏꢒꢁꢠꢡꢛ
ꢜꢔꢊꢃꢝ ꢧꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢨꢊꢚꢅꢉꢋꢓꢊꢦꢃꢆꢚꢇꢩꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢪꢊꢎꢨꢊꢚꢃꢆꢚꢉꢜꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ
ꢒꢍꢍꢔꢢꢫꢫꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢫꢔꢊꢎꢨꢊꢚꢃꢆꢚ
D
D1
E
H
L
N
1
2
b
b1
b1
e
E1
e1
A
C
ꢬꢆꢃꢍꢇꢕꢭꢮꢮꢭꢕꢌꢣꢌꢯꢜ
ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢉꢮꢃꢄꢃꢍꢇ
ꢕꢭꢰ
ꢕꢛꢲ
ꢰꢐꢄꢳꢅꢓꢉꢈꢑꢉꢮꢅꢊꢋꢇꢰ
ꢪꢃꢍꢎꢒ
ꢱꢐꢍꢇꢃꢋꢅꢉꢮꢅꢊꢋꢉꢪꢃꢍꢎꢒ
ꢱꢥꢅꢓꢊꢏꢏꢉꢶꢅꢃꢚꢒꢍ
ꢱꢥꢅꢓꢊꢏꢏꢉꢹꢃꢋꢍꢒ
ꢕꢈꢏꢋꢅꢋꢉꢪꢊꢎꢨꢊꢚꢅꢉꢹꢃꢋꢍꢒꢉꢊꢍꢉꢠꢊꢇꢅ
ꢕꢈꢏꢋꢅꢋꢉꢪꢊꢎꢨꢊꢚꢅꢉꢹꢃꢋꢍꢒꢉꢊꢍꢉꢣꢈꢔ
ꢱꢥꢅꢓꢊꢏꢏꢉꢮꢅꢆꢚꢍꢒ
ꢣꢊꢳꢉꢮꢅꢆꢚꢍꢒ
ꢧꢈꢈꢍꢉꢮꢅꢆꢚꢍꢒ
ꢮꢅꢊꢋꢉꢣꢒꢃꢎꢨꢆꢅꢇꢇ
ꢮꢅꢊꢋꢉꢘꢉꢹꢃꢋꢍꢒ
ꢴ
ꢅ
ꢅꢀ
ꢛ
ꢶ
ꢌ
ꢌꢀ
ꢂ
ꢂꢀ
ꢮ
ꢀꢁꢟꢗꢉꢠꢜꢡ
ꢴꢁꢗꢗꢉꢠꢜꢡ
ꢀꢁꢞꢗ
ꢴꢁꢺꢞ
ꢘꢁꢘꢺ
ꢘꢁꢀꢴ
ꢞꢁꢴꢺ
ꢀꢁꢞꢗ
ꢗꢁꢙꢺ
ꢗꢁꢴꢟ
ꢗꢁꢞꢀ
ꢗꢁꢴꢵ
ꢀꢁꢵꢗ
ꢞꢁꢘꢟ
ꢘꢁꢵꢗ
ꢘꢁꢘꢺ
ꢞꢁꢵꢗ
ꢀꢁꢸꢴ
ꢀꢁꢘꢗ
ꢗꢁꢞꢞ
ꢗꢁꢟꢵ
ꢗꢁꢞꢸ
ꢎ
ꢳ
ꢳꢀ
ꢮꢅꢊꢋꢇꢉꢀꢉꢽꢉꢴꢉꢹꢃꢋꢍꢒ
ꢜꢔꢊꢃꢉꢝ
ꢀꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢇꢉꢂꢉꢊꢆꢋꢉꢌꢉꢋꢈꢉꢆꢈꢍꢉꢃꢆꢎꢏꢐꢋꢅꢉꢄꢈꢏꢋꢉꢑꢏꢊꢇꢒꢉꢈꢓꢉꢔꢓꢈꢍꢓꢐꢇꢃꢈꢆꢇꢁꢉꢕꢈꢏꢋꢉꢑꢏꢊꢇꢒꢉꢈꢓꢉꢔꢓꢈꢍꢓꢐꢇꢃꢈꢆꢇꢉꢇꢒꢊꢏꢏꢉꢆꢈꢍꢉꢅꢖꢎꢅꢅꢋꢉꢗꢁꢀꢘꢙꢉꢄꢄꢉꢔꢅꢓꢉꢇꢃꢋꢅꢁ
ꢘꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢃꢆꢚꢉꢊꢆꢋꢉꢍꢈꢏꢅꢓꢊꢆꢎꢃꢆꢚꢉꢔꢅꢓꢉꢛꢜꢕꢌꢉꢝꢀꢞꢁꢟꢕꢁ
ꢠꢜꢡꢢ ꢠꢊꢇꢃꢎꢉꢂꢃꢄꢅꢆꢇꢃꢈꢆꢁꢉꢣꢒꢅꢈꢓꢅꢍꢃꢎꢊꢏꢏꢤꢉꢅꢖꢊꢎꢍꢉꢥꢊꢏꢐꢅꢉꢇꢒꢈꢦꢆꢉꢦꢃꢍꢒꢈꢐꢍꢉꢍꢈꢏꢅꢓꢊꢆꢎꢅꢇꢁ
ꢕꢃꢎꢓꢈꢎꢒꢃꢔ ꢣꢅꢎꢒꢆꢈꢏꢈꢚꢤ ꢂꢓꢊꢦꢃꢆꢚ ꢡꢗꢞꢼꢗꢘꢺꢠ
2009-2013 Microchip Technology Inc.
DS20002200D-page 27
MCP1804
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002200D-page 28
2009-2013 Microchip Technology Inc.
MCP1804
ꢢꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢈꢈꢆꢏꢐꢊꢈꢋꢑꢃꢆꢒꢓꢄꢑꢉꢋꢉꢊꢔꢓꢆꢕꢏꢒꢘꢆꢙꢍꢏꢒꢁꢚꢀꢛ
ꢜꢔꢊꢃꢝ ꢧꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢨꢊꢚꢅꢉꢋꢓꢊꢦꢃꢆꢚꢇꢩꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢪꢊꢎꢨꢊꢚꢃꢆꢚꢉꢜꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ
ꢒꢍꢍꢔꢢꢫꢫꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢫꢔꢊꢎꢨꢊꢚꢃꢆꢚ
b
N
E
E1
3
2
1
e
e1
D
A2
c
A
φ
A1
L
L1
ꢬꢆꢃꢍꢇꢕꢭꢮꢮꢭꢕꢌꢣꢌꢯꢜ
ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢉꢮꢃꢄꢃꢍꢇ
ꢕꢭꢰ
ꢰꢱꢕ
ꢕꢛꢲ
ꢰꢐꢄꢳꢅꢓꢉꢈꢑꢉꢪꢃꢆꢇꢰ
ꢮꢅꢊꢋꢉꢪꢃꢍꢎꢒ
ꢟ
ꢅ
ꢗꢁꢺꢟꢉꢠꢜꢡ
ꢱꢐꢍꢇꢃꢋꢅꢉꢮꢅꢊꢋꢉꢪꢃꢍꢎꢒ
ꢱꢥꢅꢓꢊꢏꢏꢉꢶꢅꢃꢚꢒꢍ
ꢕꢈꢏꢋꢅꢋꢉꢪꢊꢎꢨꢊꢚꢅꢉꢣꢒꢃꢎꢨꢆꢅꢇꢇ
ꢜꢍꢊꢆꢋꢈꢑꢑ
ꢱꢥꢅꢓꢊꢏꢏꢉꢹꢃꢋꢍꢒ
ꢕꢈꢏꢋꢅꢋꢉꢪꢊꢎꢨꢊꢚꢅꢉꢹꢃꢋꢍꢒ
ꢱꢥꢅꢓꢊꢏꢏꢉꢮꢅꢆꢚꢍꢒ
ꢧꢈꢈꢍꢉꢮꢅꢆꢚꢍꢒ
ꢧꢈꢈꢍꢔꢓꢃꢆꢍ
ꢧꢈꢈꢍꢉꢛꢆꢚꢏꢅ
ꢮꢅꢊꢋꢉꢣꢒꢃꢎꢨꢆꢅꢇꢇ
ꢮꢅꢊꢋꢉꢹꢃꢋꢍꢒ
ꢅꢀ
ꢛ
ꢛꢘ
ꢛꢀ
ꢌ
ꢌꢀ
ꢂ
ꢮ
ꢀꢁꢺꢗꢉꢠꢜꢡ
ꢗꢁꢺꢗ
ꢗꢁꢸꢺ
ꢗꢁꢗꢗ
ꢘꢁꢘꢗ
ꢀꢁꢴꢗ
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2009-2013 Microchip Technology Inc.
DS20002200D-page 29
MCP1804
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002200D-page 30
2009-2013 Microchip Technology Inc.
MCP1804
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1
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b1
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E
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A
C
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ꢀꢁꢞꢗ
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ꢠꢜꢡꢢ ꢠꢊꢇꢃꢎꢉꢂꢃꢄꢅꢆꢇꢃꢈꢆꢁꢉꢣꢒꢅꢈꢓꢅꢍꢃꢎꢊꢏꢏꢤꢉꢅꢖꢊꢎꢍꢉꢥꢊꢏꢐꢅꢉꢇꢒꢈꢦꢆꢉꢦꢃꢍꢒꢈꢐꢍꢉꢍꢈꢏꢅꢓꢊꢆꢎꢅꢇꢁ
ꢕꢃꢎꢓꢈꢎꢒꢃꢔ ꢣꢅꢎꢒꢆꢈꢏꢈꢚꢤ ꢂꢓꢊꢦꢃꢆꢚ ꢡꢗꢞꢼꢗꢴꢗꢠ
2009-2013 Microchip Technology Inc.
DS20002200D-page 31
MCP1804
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002200D-page 32
2009-2013 Microchip Technology Inc.
MCP1804
APPENDIX A: REVISION HISTORY
Revision D (October 2013)
The following is the list of modifications:
1. Added operating junction temperature range in
Temperature Specifications.
2. Updated the maximum package power
dissipation values in Section 6.3.1.2, Junction
Temperature Estimate.
3. Updated package specification drawings to
reflect all view.
4. Minor typographical changes.
Revision C (June 2011)
The following is the list of modifications:
5. Added seven new characterization graphs to
Section 2.0, Typical Performance Curves
(Figures 2-49 - 2-55).
6. Changed layout of Table 3-1. Added separate
column for SOT-223-3.
7. Updated Package Marking drawings and
examples in the Packaging Information section.
8. Added new voltage option to Product
Identification System table.
Revision B (November 2009)
The following is the list of modifications:
• Electrical characteristics, SHDN “H” Voltage item:
Changed to SHDN “L” Voltage.
Revision A (September 2009)
• Original Release of this Document.
2009-2013 Microchip Technology Inc.
DS20002200D-page 33
MCP1804
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
/XX
XX
T
-XX
Examples:
a)
b)
c)
d)
e)
f)
MCP1804T-1802I/OT:
1.8V, 5-LD SOT-23
2.5V, 5-LD SOT-23
3.0V, 5-LD SOT-23
3.3V, 5-LD SOT-23
5.0V, 5-LD SOT-23
10V, 5-LD SOT-23
12V, 5-LD SOT-23
Temperature
Range
Package
Output
Voltage
Tolerance
Tape
and
Reel
Voltage
MCP1804T-2502I/OT:
MCP1804T-3002I/OT:
MCP1804T-3302I/OT:
MCP1804T-5002I/OT:
MCP1804T-A002I/OT:
MCP1804T-C002I/OT:
Device:
MCP1804T:
LDO Voltage Regulator (Tape and Reel)
g)
Voltage Options:
18
25
30
33
50
A0
C0
J0
=
=
=
=
=
=
=
=
1.8V
2.5V
3.0V
3.3V
5.0V
10V
12V
18V
a)
b)
c)
d)
e)
f)
MCP1804T-1802I/MB:
MCP1804T-2502I/MB:
MCP1804T-3002I/MB:
MCP1804T-3302I/MB:
MCP1804T-5002I/MB:
MCP1804T-A002I/MB:
MCP1804T-C002I/MB:
1.8V, 3-LD SOT-89
2.5V, 3-LD SOT-89
3.0V, 3-LD SOT-89
3.3V, 3-LD SOT-89
5.0V, 3-LD SOT-89
10V, 3-LD SOT-89
12V, 3-LD SOT-89
g)
Output Voltage
Tolerance:
02
I
=
±2%
a)
b)
c)
d)
e)
f)
MCP1804T-1802I/MT:
MCP1804T-2502I/MT:
MCP1804T-3002I/MT:
MCP1804T-3302I/MT:
MCP1804T-5002I/MT:
MCP1804T-A002I/MT:
MCP1804T-C002I/MT:
1.8V, 5-LD SOT-89
2.5V, 5-LD SOT-89
3.0V, 5-LD SOT-89
3.3V, 5-LD SOT-89
5.0V, 5-LD SOT-89
10V, 5-LD SOT-89
12V, 5-LD SOT-89
Temperature
Range:
= -40C to +85C (Industrial)
g)
Package:
DB
MB
MT
OT
=
=
=
=
3-lead Plastic Small Outline Transistor (SOT-223)
3-lead Plastic Small Outline Transistor (SOT-89)
5-lead Plastic Small Outline Transistor (SOT-89)
5-lead Plastic Small Outline Transistor (SOT-23)
a)
b)
c)
d)
e)
f)
MCP1804T-1802I/DB:
MCP1804T-2502I/DB:
MCP1804T-3002I/DB:
MCP1804T-3302I/DB:
MCP1804T-5002I/DB:
MCP1804T-A002I/DB:
MCP1804T-C002I/DB:
1.8V, 3-LD SOT-223
2.5V, 3-LD SOT-223
3.0V, 3-LD SOT-223
3.3V, 3-LD SOT-223
5.0V, 3-LD SOT-223
10V, 3-LD SOT-223
12V, 3-LD SOT-223
g)
DS20002200D-page 34
2009-2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
32
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2009-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-62077-590-5
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
== ISO/TS 16949 ==
2009-2013 Microchip Technology Inc.
DS20002200D-page 35
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
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Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
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Tel: 91-20-3019-1500
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Tel: 61-2-9868-6733
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Web Address:
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Tel: 86-10-8569-7000
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Fax: 82-2-558-5932 or
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Tel: 86-571-2819-3187
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Fax: 317-773-5453
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
Los Angeles
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Taiwan - Taipei
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Toronto
Mississauga, Ontario,
Canada
China - Xiamen
Tel: 905-673-0699
Fax: 905-673-6509
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
08/20/13
DS20002200D-page 36
2009-2013 Microchip Technology Inc.
相关型号：
MCP1804T-2502I/DB
2.5 V FIXED POSITIVE LDO REGULATOR, 1.9 V DROPOUT, PDSO3, PLASTIC, SOT-223, 4 PIN
MICROCHIP
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