MCRF202-I/SBQ99 [MICROCHIP]
SPECIALTY TELECOM CIRCUIT, UUC6, 0.011 INCH, WAFER-6;
| 型号： | MCRF202-I/SBQ99 |
| 厂家： | 
MICROCHIP |
| 描述： | SPECIALTY TELECOM CIRCUIT, UUC6, 0.011 INCH, WAFER-6 |
| 文件： | 总16页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCRF202
Passive RFID Device with Sensor Input
FEATURES
PACKAGE LAYOUT
PDIP/SOIC
• Sensor input polarity inverts data stream
• Read only data transmission
VA
1
VB
8
NC
2
NC
7
6
5
• 96- or 128-bits of factory programming user mem-
ory (also supports 48 and 64-bit protocols)
VSS
VCC
TEST
3
SENSOR
4
• Operates up to 400 kHz carrier frequency
• On-chip rectifier and voltage regulator
• Low-power operation
DESCRIPTION
• Factory programming and device serialization
• Encoding options:
The MCRF202 is a passive Radio Frequency Identifica-
tion (RFID) device that provides an RF interface for
reading the contents of a user memory array. This
device is specially designed to detect the logic state of
an external sensor, and alter its data transmissions,
based on the condition of the sensor input. A logic ‘1’ at
the sensor input results in normal operation, a logic ‘0’
at the sensor inputs causes the entire data stream to be
inverted. In this way, a reader can simultaneously
obtain the tag’s ID number and the state of an external
switch or other sensor.
- NRZ Direct, Differential Biphase, Manchester
Biphase
• Modulation options:
- Direct, FSK, PSK (change on data change),
PSK (change at the beginning of a one)
APPLICATION
RF
Signal
The device is powered by rectifying the incoming RF
carrier signal that is transmitted from the reader. When
the device develops sufficient DC voltage, it transmits
the contents of its memory array by modulating the
incoming RF carrier signal. The reader is able to detect
the modulation and decodes the data being transmit-
ted. Code length, modulation option, encoding option,
and bit rate are set at the factory to fit the needs of par-
ticular applications.
External
Sensor
Switch
Reader
MCRF202
Data
The MCRF202 is available in die, wafer, PDIP and
SOIC packages. The encoding, modulation, bit rate
options, and data fields are specified by the customer
and programmed by Microchip Technology Inc. prior to
shipment. See TB023 for more information on factory
serialization (SQTP™).
BLOCK DIAGRAM
Sensor
Input
Data
Modulation
Control Logic
Inverter
Clock
Generator
12-bit
Configuration
Register
V
A
External Coil
and Capacitor
Connections
V
CC
Row
Decode
Mod
Circuit
Rectifier and
AC Clamp
128-bit
VB
VSS
EEPROM
Memory Array
Baud
Rate
Timing
Power-On
Reset
Reset
Column
Decode
Counter
SQTP is a trademark of Microchip Technology Inc.
2000 Microchip Technology Inc.
DS21308C-page 1
MCRF202
TABLE 1-1:
Name
PAD FUNCTION TABLE
Function
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Maximum Ratings*
VA,VB
NC
Coil and capacitor connections
No connection, test pad
Device ground
Storage temperature ....................................- 65°C to +150°C
Ambient temp. with power applied ................-40°C to +125°C
Maximum current into coil pads ....................................50 mA
Vss
Vcc
DC supply out from device
Sensor input
*Notice: Stresses above those listed under “Maximum ratings” may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended peri-
ods may affect device reliability.
SENSOR
TEST
Test pin, do not connect
TABLE 1-2:
AC AND DC CHARACTERISTICS
All parameters apply across
the specified operating ranges
unless otherwise noted.
Industrial (I): Tamb = -40°C to +85°C
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Clock frequency
Data retention
FCLK
100
200
—
—
—
50
5
400
—
kHz
Years
µA
25°C
Coil current (Dynamic)
ICD
IDD
—
Operating current
with no VCC load
—
—
µA
VCC = 2V
No load to VCC pad
Operating current
with VCC load
IDL
—
10
—
µA
VCC = 2V
VCC load through
switch to sensor
Turn-on-voltage (Dynamic) for
modulation
VAVB
VCC
CIN
RS
10
2
—
—
—
—
VPP
VDC
pF
Input Capacitance
—
2
—
Between VA and VB
SENSOR pull-down
SENSOR trigger threshold
400
0.5
800
1.0
1200
1.5
KΩ
V
VS
DS21308C-page 2
2000 Microchip Technology Inc.
MCRF202
FIGURE 1-1: DIE PLOT
TABLE 1-3
RFID PAD COORDINATES
(MICRONS)
VSS
VCC SENSOR TEST
Passivation
Openings
Pad
Pad
Pad
Name
Pad
Width
Pad
Height
Center Center
X
Y
VA
VB
90.0
90.0
105.3
90.0
90.0
90.0
90.0
90.0
112.5
90.0
90.0
90.0
427.50 -734.17
-408.60 -734.17
-417.60 722.47
-164.70 723.82
VSS
VCC
SENSOR
TEST
69.30
723.82
723.82
325.35
Note 1: All coordinates are referenced from the cen-
ter of the die.
VB
VA
2: Die size 1.1215 mm x 1.7384 mm.
2000 Microchip Technology Inc.
DS21308C-page 3
MCRF202
2.1.3
VCC REGULATOR
2.0
FUNCTIONAL DESCRIPTION
The device contains three major building blocks. They
are RF front-end and sensor input, configuration and
control logic, and memory sections. The Block Diagram
is shown on page 1.
The device generates a DC supply voltage from the
unregulated coil voltage.
2.1.4
CLOCK GENERATOR
This circuit generates a clock based on the carrier fre-
quency from the reader. This clock is used to derive all
timing in the MCRF202, including the baud rate and
modulation rate.
2.1
RF Front-End and Sensor Input
The RF front-end of the device includes circuits for rec-
tification of the carrier, VDD (operating voltage), and
high-voltage clamping to prevent excessive voltage
from being applied to the device. This section also gen-
erates a system clock from the incoming carrier signal
and modulates the carrier signal to transmit data to the
reader.
2.1.5
POWER-ON RESET
This circuit generates a power-on reset when the tag
first enters the interrogator field. The reset releases
when sufficient power has developed on the VDD
regulator to allow correct operation.
2.1.1
RECTIFIER – AC CLAMP
2.1.6
SENSOR INPUT AND DATA INVERTER
The AC voltage generated by the external tuned LC cir-
cuit is full wave rectified. This unregulated voltage is
used as the maximum DC supply voltage for the rest of
the device and for the VCC supply to the external sensor
or switch. Any excessive voltage on the tuned circuit is
clamped by the internal circuitry to a safe level to
prevent damage to the IC.
The SENSOR input responds to logic high or logic low
voltages to drive the internal inverter on or off. A logic
high results in normal tag operation; a logic low at SEN-
SOR input activates an inverter, which inverts the entire
data stream prior to modulation.
The SENSOR input has an internal pull-down resistor
2.1.2
MODULATION CIRCUIT
of 800 kΩ (typical). See Figure 2-3 for details.
The MCRF202 sends the encoded data to the reader
by AM-modulating the coil voltage across the tuned LC
circuit. A modulation transistor is placed between the
antenna coil pads (VA and VB). The transistor turns on
and off based on the modulation signal. As a result, the
amplitude of the antenna coil voltage varies with the
modulation signal. See Figure 2-1 for details.
FIGURE 2-1: MODULATION SIGNAL AND MODULATED SIGNAL
MCRF202
VA
Mod.
Signal
L
C
Mod. TR
VB
Amplitude
Modulation Signal
Modulated Signal
(across VA and VB)
t
DS21308C-page 4
2000 Microchip Technology Inc.
MCRF202
The encoded data is then either passed NRZ Direct out
to modulate the coil, FSK modulated, PSK modulated
with changes on the change of data, or PSK with
changes on the bit edge of a one. Configuration bits
CB8 and CB9 determine the modulation option. CB10
is used if the PSK option has been selected, and deter-
mines if the return carrier rate is FCLK/2 or FCLK/4.
2.2
Configuration Register and Control
Logic
The configuration register determines the operational
parameters of the device. It directly controls logic
blocks which generate the baud rate, memory size,
encoded data, modulation protocol, etc. CB11 is
always a zero. Once the array is successfully pro-
grammed at the factory, the lock bit CB12 is set. When
the lock bit is set, programming and erasing the device
becomes permanently disabled. Figure 2-2 contains a
description of the control register bit functions.
2.3
Memory Section
The device has 128 bits of one-time-programmable
(OTP) memory. The user can choose 96 or 128 bits by
selecting CB1 bit in the configuration register. See
Figure 2-2 for more details.
2.2.1
BAUD RATE TIMING
2.3.1
COLUMN AND ROW DECODER LOGIC
AND BIT COUNTER
The device will access data at a baud rate determined
by bits CB2, CB3, CB4, and CB5 of the configuration
register. CB2, CB3, and CB4 determine the data rate
(CACLK).
The column and row decoders address the EEPROM
array at the clock rate and generate a serial data
stream for modulation. This data stream can be up to
128 bits in length. The size of the stream is user
programmable with CB1 and can be set to 96 or 128
bits. Data lengths of 48 and 64 bits are available by pro-
gramming the data twice in the array, end-to-end. The
data is then encoded by the modulation logic.
2.2.2
MODULATION CONTROL LOGIC
This logic acts upon the serial data being read from the
EEPROM and performs two operations on the data.
The logic first encodes the data according to the
configuration bits CB6 and CB7. The data can be sent
out directly to the modulation logic or encoded Biphase
Differential, Biphase Manchester or Manchester with
IDI option.
The column and row decoders route the proper voltage
to the array for programming and reading.
2000 Microchip Technology Inc.
DS21308C-page 5
MCRF202
FIGURE 2-2: CONFIGURATION REGISTER
CB12 CB11 CB10 CB9 CB8 CB7 CB6 CB5 CB4 CB3 CB2 CB1
ARRAY SIZE
CB1 = 1 128-bit user array
CB1 = 0 96-bit user array
TIMING
CB2 CB3 CB4
Rate
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
MOD128
MOD100
MOD80
MOD32
MOD64
MOD50
MOD40
MOD16
NOT USED
CB5 = 0
DATA ENCODING
CB6 = 0; CB7 = 0 NRZ_L (Direct)
CB6 = 0; CB7 = 1 Biphase_S (Differential)
CB6 = 1; CB7 = 0 Biphase_L (Manchester)
CB6 = 1; CB7 = 1 (Inverted Manchester)
MODULATION OPTIONS
CB8 = 0; CB9 = 0 FSK 0 = Fc/8, 1 = Fc/10
CB8 = 0; CB9 = 1 Direct
CB8 = 1; CB9 = 0 psk_1
(phase change on change of data)
CB8 = 1; CB9 = 1 psk_2
(phase change at beginning of a one)
PSK RATE OPTION
CB10 = 1 clk/4 carrier
CB10 = 0 clk/2 carrier
(NOT USED)
CB11 = 0
ARRAY LOCK BIT
CB12 = 1
DS21308C-page 6
2000 Microchip Technology Inc.
MCRF202
FIGURE 2-3: TYPICAL APPLICATION CIRCUITS
Using MCRF202 with an external passive switch or sensor
RF Carrier
Signal
I
Input capacitance: 2 pF
From
Oscillator
125 kHz
VSS
VCC
Pad VA
Pad VB
External
Switch
or Sensor
740 µH
4.91 mH
330 pF
SENSOR
To Reader
Data Detection
Circuit
MCRF202
Data
2.2 nF
1
f
= ------------------ = 1 2 5 kHz
2π LC
res
Device Output
External Switch CLOSED (Logic “1” in SENSOR Input):
External Switch OPEN (Logic “0” in SENSOR Input):
Normal Data Stream
Inverted Data Stream
Using MCRF202 with an external, self-powered system
RF Carrier
Signal
Input capacitance: 2 pF
I
From
oscillator
125 kHz
VSS
Pad VA
Self-Powered
External System
VCC
740 µH
4.91 mH
330 pF
SENSOR
Pad VB
To Reader
MCRF202
Data Detection
Data
Circuit
2.2 nF
1
f
= ------------------ = 1 2 5 kHz
2π LC
res
Device Output
Logic “1” in SENSOR Input:
Logic “0” in SENSOR Input:
Normal Data Stream
Inverted Data Stream
Using MCRF202 with a low-resistance pull-down
RF Carrier
Signal
I
Input capacitance: 2 pF
VSS
From
oscillator
125 kHz
Pad VA
SW
External
Resistor
VCC
740 µH
4.91 mH
330 pF
SENSOR
Pad VB
To Reader
MCRF202
Data Detection
Data
Circuit
2.2 nF
1
f
= ------------------ = 1 2 5 kHz
res
2π LC
Device Output
External Switch CLOSED (Logic “1” in SENSOR Input):
External Switch OPEN (Logic “0” in SENSOR Input):
Normal Data Stream
Inverted Data Stream
2000 Microchip Technology Inc.
DS21308C-page 7
MCRF202
3.0
PACKAGING INFORMATION
3.1
Package Markings
8-Lead PDIP (300 mil)
Example
MCRF202
XXXXXXXX
XXXXXNNN
XXXXXNNN
YYWW
0025
8-Lead SOIC (150 mil)
Example
XXXXXXX
XXXYYWW
MCRF202
XXX0025
NNN
NNN
Legend: XX...X Customer specific information*
YY
Year code (last 2 digits of calendar year)
WW
NNN
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
*
Standard OTP marking consists of Microchip part number, year code, week code, facility code, mask
rev#, and assembly code. For OTP marking beyond this, certain price adders apply. Please check with
your Microchip Sales Office. For QTP devices, any special marking adders are included in QTP price.
DS21308C-page 8
2000 Microchip Technology Inc.
MCRF202
3.2
Package Details
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
B
p
eB
Units
INCHES*
NOM
MILLIMETERS
NOM
Dimension Limits
MIN
MAX
MIN
MAX
n
p
Number of Pins
Pitch
8
8
.100
.155
.130
2.54
3.94
3.30
Top to Seating Plane
A
.140
.170
.145
3.56
4.32
3.68
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
A2
A1
E
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
2.92
0.38
7.62
6.10
9.14
3.18
0.20
1.14
0.36
7.87
5
.313
.250
.373
.130
.012
.058
.018
.370
10
.325
.260
.385
.135
.015
.070
.022
.430
15
7.94
6.35
9.46
3.30
0.29
1.46
0.46
9.40
10
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
E1
D
L
Tip to Seating Plane
Lead Thickness
c
Upper Lead Width
B1
B
eB
α
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
§
β
5
10
15
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
2000 Microchip Technology Inc.
DS21308C-page 9
MCRF202
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
h
α
45°
c
A2
A
φ
β
L
A1
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
8
MAX
n
p
Number of Pins
Pitch
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
1.27
Overall Height
A
.053
.069
1.35
1.32
1.55
1.42
0.18
6.02
3.91
4.90
0.38
0.62
4
1.75
Molded Package Thickness
Standoff
A2
A1
E
E1
D
.052
.004
.228
.146
.189
.010
.019
0
.061
.010
.244
.157
.197
.020
.030
8
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
§
0.10
5.79
3.71
4.80
0.25
0.48
0
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
h
L
φ
Foot Angle
c
Lead Thickness
Lead Width
.008
.013
0
.009
.017
12
.010
.020
15
0.20
0.33
0
0.23
0.42
12
0.25
0.51
15
B
α
β
Mold Draft Angle Top
Mold Draft Angle Bottom
0
12
15
0
12
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
DS21308C-page 10
2000 Microchip Technology Inc.
MCRF202
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991103
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Trademarks: The Microchip name, logo, PIC, PICmicro,
PICSTART, PICMASTER, PRO MATE and MPLAB are
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2000 Microchip Technology Inc.
DS21308C-page 11
MCRF202
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-
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Literature Number:
DS21308C
Device:
MCRF202
Questions:
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DS21308C-page 12
2000 Microchip Technology Inc.
MCRF202
NOTES:
2000 Microchip Technology Inc.
DS21308C-page 13
MCRF202
NOTES:
DS21308C-page 14
2000 Microchip Technology Inc.
MCRF202
MCRF202 PRODUCT IDENTIFICATION GUIDE
To order or obtain information on pricing or delivery, please contact your local Microchip sales office.
MCRF202 – X /XX XXX
SQTP Customer Identifier - assigned during the SQTP (factory
Configuration: programming) approval process. Always Qxx where xx is an inte-
ger used to track customer data files.
WF = Sawed wafer on frame (7 mil backgrind)
W = Wafer (11 mil backgrind)
S = Dice in waffle pack (11 mil backgrind)
WFB = Sawed, Bumped wafer on frame (11 mil backgrind)
Package:
WB = Bumped wafer (11 mil backgring)
SB = Bumped die in waffle pack (11 mil backgrind)
SN = 150 mil, 8-lead SOIC
P = 8-lead PDIP
Temperature
Range:
I = -40°C to +85°C
Sample Part
Number:
MCRF202-I /WQ99
MCRF202-I/WQ99 = 125 kHz, industrial temperature, wafer package, fac-
tory programmed, sensor input, “Q99” sample cus-
tomer code.
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2000 Microchip Technology Inc.
DS21308C-page 15
WORLDWIDE SALES AND SERVICE
AMERICAS
AMERICAS (continued)
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Westford, MA 01886
Tel: 508-480-9990 Fax: 508-480-8575
Shanghai, 200051, P.R.C.
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Hong Kong
Microchip Asia Pacific
Unit 2101, Tower 2
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Arizona Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Chicago
Microchip Technology Inc.
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Metroplaza
Dallas
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2-401-1200 Fax: 852-2-401-3431
Microchip Technology Inc.
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Dayton
Microchip Technology Inc.
Two Prestige Place, Suite 150
Miamisburg, OH 45342
Tel: 937-291-1654 Fax: 937-291-9175
India
Germany
Microchip Technology Inc.
India Liaison Office
Arizona Microchip Technology GmbH
Gustav-Heinemann-Ring 125
D-81739 München, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Divyasree Chambers
I Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 027, India
Tel: 91-80-207-2165 Fax: 91-80-207-2171
Italy
Arizona Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Detroit
Microchip Technology Inc.
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Japan
Microchip Technology Intl. Inc.
Benex S-1 6F
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
United Kingdom
Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Los Angeles
Microchip Technology Inc.
18201 Von Karman, Suite 1090
Irvine, CA 92612
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea
Tel: 949-263-1888 Fax: 949-263-1338
New York
Microchip Technology Inc.
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
Berkshire, England RG41 5TU
Tel: 44 118 921 5858 Fax: 44-118 921-5835
Tel: 82-2-554-7200 Fax: 82-2-558-5934
8/01/00
San Jose
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999. The
Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs and microperipheral
products. In addition, Microchip’s quality
system for the design and manufacture of
development systems is ISO 9001 certified.
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
All rights reserved. © 2000 Microchip Technology Incorporated. Printed in the USA. 10/00
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates.
It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by
Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written
approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellectual property
rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other
trademarks mentioned herein are the property of their respective companies.
DS21308C-page 16
2000 Microchip Technology Inc.
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