MCRF250-I/PXXX [MICROCHIP]
IC,TRANSPONDER,CMOS,DIP,8PIN,PLASTIC;型号: | MCRF250-I/PXXX |
厂家: | MICROCHIP |
描述: | IC,TRANSPONDER,CMOS,DIP,8PIN,PLASTIC 电信 光电二极管 电信集成电路 |
文件: | 总12页 (文件大小:122K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M
MCRF250
Contactless Programmable Passive RFID Device With Anti-Collision
FEATURES
• Anti-collision feature to resolve multiple tags in
the same RF field
APPLICATION
• Read-only data transmission
RF
Signal
• 96 or 128 bits of One-Time Programmable (OTP)
user memory (also supports 48 and 64-bit
protocols)
Transmitter/
Receiver
MCRF250
• Operates up to 150 kHz
Data
• On-chip rectifier and voltage regulator
• Low power operation
• Factory programming and device serialization
available
The MCRF250 is equipped with an anti-collision
feature that allows multiple tags in the same field to
be read simultaneously. This revolutionary feature
eliminates the issue of data corruption due to
simultaneous transmissions from multiple tags.
• Encoding options:
- NRZ Direct, Differential Biphase, Manchester
Biphase, Biphase IDI
• Modulation options:
- FSK, Direct, PSK (change on data change),
PSK (change at the beginning of a one)
The user memory array of this device can be
programmed contactlessly after encapsulation. This
allows the user to keep encapsulated blank tags in
stock for on-demand personalization. The tags can
then be programmed with data as they are needed.
• Contactless programmable after encapsulation
DESCRIPTION
This device is a Radio Frequency Identification (RFID)
tag that provides a variety of operating modes. The
device is powered by an external RF transmitter
(reader) through inductive coupling. When in the reader
field, the device will transmit the contents of its memory
array by damping (modulating) the incoming RF signal.
A reader is able to detect the damping and decodes the
data being transmitted. Code length, modulation
option, encoding option and bit rate are set at the
factory to fit the needs of particular applications.
These devices are available in die form or packaged in
SOIC, PDIP or COB modules. The encoding,
modulation, frequency, and bit rate options are
specified by the customer and programmed by
Microchip Technology Inc. prior to shipment. Array pro-
gramming and serialization (SQTP) can also be
arranged upon request. See TB023 (page 23) for more
information.
BLOCK DIAGRAM
Data
Modulation
Control
Clock
Anti-collision
Circuitry
Generator
Memory
Array
Row
Decode
Coil
Connections
VCC
VSS
Rectifier
Column
Decode
Counter
1998 Microchip Technology Inc.
DS21267C-page 1
MCRF250
TABLE 1-1:
PAD FUNCTION TABLE
1.0
ELECTRICAL
CHARACTERISTICS
Name Function
1.1
Maximum Ratings*
VA,VB
NC
Coil connection
No connection, test pad
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-40°C to +125°C
Maximum current into coil pads ....................................50 mA
*Notice: Stresses above those listed under “Maximum ratings” may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for extended peri-
ods may affect device reliability.
TABLE 1-2:
AC AND DC CHARACTERISTICS
All parameters apply across the speci- Industrial (I): Tamb = -40°C to +85°C
fied operating ranges unless otherwise
noted.
Parameter
Clock frequency
Symbol
Min.
Typ.
Max. Units
Conditions
FCLK
TWC
100
—
—
2
150
—
kHz
s
Contactless programming time
Data retention
128-bit array
200
—
—
50
2
—
Years 25°C
Coil current (Dynamic)
Operating current
ICD
IDD
µA
µA
—
Turn-on-voltage (Dynamic)
for modulation
VAVB
VCC
10
2
—
—
—
—
VPP
VDC
FIGURE 1-1: DIE PLOT
TABLE 1-3:
RFID PAD COORDINATES
(MICRONS)
NC
NC
NC
NC
Passivation
Openings
Pad
Pad
Pad
Pad
Pad
Name Width
Height
Center X Center Y
VA
VB
90.0
90.0
90.0
90.0
427.50
-734.17
-734.17
-408.60
Note 1: All coordinates are referenced from the cen-
ter of the die.
2: Die size 1.1215 mm x 1.7384 mm.
FIGURE 1-2: PIN DIAGRAM
PDIP, SOIC
1
2
3
4
8
7
6
5
VA
VB
NC
NC
NC
NC
NC
NC
VB
VA
DS21267C-page 2
1998 Microchip Technology Inc.
MCRF250
2.5
Clock Generator
2.0
FUNCTIONAL DESCRIPTION
The RF section generates all the analog functions
needed by the transponder. These include rectification
of the carrier, on-chip regulation of VPP (programming
voltage), and VDD (operating voltage), as well as high
voltage clamping to prevent excessive voltage from
being applied to the device. This section generates a
system clock from the interrogator carrier frequency,
detects carrier interrupts and modulates the tuned LC
antenna for transmission to the interrogator. The chip
detects a power up condition and resets the transpon-
der when sufficient voltage develops.
This circuit generates a clock with a frequency equal to
the interrogator frequency. This clock is used to derive
all timing in the device, including the baud rate,
modulation rate, and programming rate.
2.6
IRQ Detector
This circuitry detects an interrupt in the continuous
electromagnetic field of the interrogator. An IRQ
(interrupt request) is defined as the absence of the
electromagnetic field for a specific number of clock
cycles. Detection of an IRQ will trigger the device to
enter the Anti-collision mode. This mode is discussed
in detail in Section 5.0.
2.1
Rectifier – AC Clamp
The AC voltage induced by the tuned LC circuit is full
wave rectified. This unregulated voltage is used as the
DC supply voltage for the rest of the chip. The peak
voltage on the tuned circuit is clamped by the internal
circuitry to a safe level to prevent damage to the IC.
This voltage is adjusted during programming to allow
sufficient programming voltage to the EEPROM.
2.7
Power On Reset
This circuit generates a power on reset when the tag
first enters the interrogator field. The reset releases
when sufficient power has developed on the VDD
regulator to allow correct operation. The reset trip
points are set such that sufficient voltage across VDD
has developed which allows for correct clocking of the
logic for reading of the EEPROM and configuration
data, and correct modulation.
2.2
Coil Load Modulation
The MCRF250 communicates by shunting a transistor
across the tuned LC circuit, which modulates the
received RF field.
2.8
Modulation Logic
This logic acts upon the serial data being read from the
EEPROM and performs two operations on the data.
The logic first encodes the data according to the
configuration bits CB6 and CB7. The data can be sent
out direct to the modulation logic or encoded biphase_s
2.3
VDD Regulator
The device generates a fixed supply voltage from the
unregulated coil voltage.
2.4
VPP Regulator
(differential),
biphase_l
(manchester)
or
idi
(manchester).
This regulates a programming voltage during the
programming mode. The voltage is switched into the
EEPROM array to perform block erasure of the
memory as well as single bit programming during both
contact and contactless programming. During reading
this voltage is level shifted down and kept below the
programming voltages to insure that the part is not
inadvertently programmed.
The encoded data is then either passed NRZ Direct out
to modulate the coil, or FSK modulated, or PSK
modulated with phase changes on the change of data,
or PSK with phase changes on the bit edge of a one.
Configuration bits CB8 and CB9 determine the
modulation option. CB10 is used if the PSK option has
been selected and determines whether the return
carrier rate is FCLK/2 or FCLK/4.
1998 Microchip Technology Inc.
DS21267C-page 3
MCRF250
3.3
Baud Rate Timing
3.0
CONFIGURATIONLOGIC
The chip will access data at a baud rate determined by
bits CB2, CB3, CB4, and CB5 of the configuration
register. CB2, CB3, and CB4 determine the return data
rate (CACLK). The default rate of FCLK/128 is used for
contact and contactless programming. Once the array
is successfully programmed, the lock bit CB12 is set.
When the lock bit is set, programming and erasing the
device becomes permanently disabled. The
configuration register has no effect on device timing or
modulation until after the EEPROM data array is
programmed. If CB2 is set to a one and CB5 is set to a
one, the 1.5 bit SYNC word option is enabled.
3.1
Control Bit Register
The configuration register determines the operational
parameters of the device. The configuration register
can not be programmed contactlessly; it is
programmed during wafer probe at the Microchip
factory. CB11 is always a one; CB12 is set when
successful contact or contactless programming of the
data array has been completed. Once CB12 is set,
programming and erasing of the device is disabled.
Figure 3-1 contains a description of the control register
bit functions.
3.2
Organization
3.4
Column and Row Decoder Logic and
Bit Counter
The configuration bit register directly controls logic
blocks, which generate the baud rate, memory size,
encoded data, and modulated data. This register also
contains bits which lock the data array.
The column and row decoders address the EEPROM
array at the CACLK rate and generate a serial data
stream for modulation. This data stream can be up to
128 bits in length. The size of the stream is user
programmable with CB1, and can be set to 96 or 128
bits. Data lengths of 48 and 64 bits are available by
programming the data twice in the array end to end.
The data is then encoded by the modulation logic. The
data length during contactless programming is 128 bits.
The column and row decoders route the proper voltage
to the array for programming and reading. In the
programming modes, each individual bit is addressed
serially from bit 1 to bit 128.
DS21267C-page 4
1998 Microchip Technology Inc.
MCRF250
FIGURE 3-1: CONFIGURATION REGISTER
CB12 CB11 CB10 CB9 CB8 CB7 CB6 CB5 CB4 CB3 CB2 CB1
ARRAY SIZE
CB1 = 1: 128-bit user array
CB1 = 0: 96-bit user array
TIMING
CB2 CB3 CB4
Rate
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
MOD128
MOD100
MOD80
MOD32
MOD64
MOD50
MOD40
MOD16
SYNC WORD
CB5 = 1: 1.5-bit sync word enable
CB5 = 0: 1.5-bit sync word disable
DATA ENCODING
CB6 = 0; CB7 = 0 nrz_I (direct)
CB6 = 0; CB7 = 1 biphase_s (differential)
CB6 = 1; CB7 = 0 biphase_I (manchester)
CB6 = 1; CB7 = 1 (Not Used)
MODULATION OPTIONS
CB8 = 0; CB9 = 0 FSK 0 = /8, 1 = /10
CB8 = 0; CB9 = 1 Direct
CB8 = 1; CB9 = 0 psk_1
(phase change on change of data)
CB8 = 1; CB9 = 1 psk_2
(phase change at beginning of a one
PSK RATE OPTION
CB10 = 1 clk/4 carrier
CB10 = 0 clk/2 carrier
(READ ONLY)
CB11 = 1
ARRAY LOCK BIT (READ ONLY)
CB12 = 0 array not locked
CB12 = 1 array is locked
1998 Microchip Technology Inc.
DS21267C-page 5
MCRF250
4.0
MODES OF OPERATION
The device has two basic modes of operation: Native
Mode and Read Mode.
4.1
Native Mode
In native mode, the MCRF250 will have an
unprogrammed array and will be in the default mode for
contactless programming (default baud rate FCLK/128,
FSK, NRZ_direct).
4.2
Read Mode
The second mode is a read mode after the contactless
or contact programming has been completed and for
the rest of the lifetime of the device. The lock bit CB12
will be set, and the transponder will have the ability to
transmit when powered and enter the anti-collision
algorithm.
FIGURE 4-1: TYPICAL APPLICATION CIRCUIT
IAC
390 pF
Input parasitic
capacitance 2pF
740 µH
From
4.05 mH
RF Energy
carrier
signal
125 kHz
generator
Pad VA
Pad VB
To reader
MCRF250
amplifier/
Data
(Backscattering
Signal)
data detector
2.2 nF
1
f
= ------------------ = 1 2 5 kHz
2π LC
res
DS21267C-page 6
1998 Microchip Technology Inc.
MCRF250
FIGURE 5-1: ANTI-COLLISION
5.0
ANTI-COLLISION
FLOWCHART
The anti-collision feature is enabled when the array is
locked. In this mode, the MCRF250 has the ability to
stop transmitting when a collision has occurred. The
device will begin transmitting again when its internal
anti-collision algorithm indicates that it is time to do so.
Begin
Multiple tags can enter the same reader field and be
read by the reader in a short period of time. The reader
must provide “gaps” (RF field off) at proper timing
intervals as shown in Figure 5-1 in order to inform the
MCRF250 of collisions, and to sequence from one tag
to another.
Provide Gap*
Wait 5-bit times
Is
No
No
modulation
present?
Yes
Is
only one tag
modulating?
Yes
Read Tag
Provide gap in the
first half of the first
bit time to make
tag stop
transmitting
Note: *Gap = lack of RF carrier signal
= 60 µs ± 20%.
1998 Microchip Technology Inc.
DS21267C-page 7
MCRF250
NOTES:
DS21267C-page 8
1998 Microchip Technology Inc.
MCRF250
NOTES:
1998 Microchip Technology Inc.
DS21267C-page 9
MCRF250
NOTES:
DS21267C-page 10
1998 Microchip Technology Inc.
MCRF250
MCRF250 PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
MCRF250 - I
/WFxxx
Hex = Three digit hex value to be programmed into the
Code
configuration register. Three hex characters corre-
spond to 12 binary bits. These bits are programmed
into the configuration register MSB first (CB12,
CB11…CB1). See the example below.
Configuration:
Package:
WF = Sawed wafer on frame (7 mil backgrind)
W = Wafer
S = Dice in wafer pack
SN = 150 mil SOIC
P = PDIP
1C = COB module with 1000 pF capacitor
3C = COB module with 330 pF capacitor
Temperature
Range:
I = –40°C to +85°C
250 = 125 kHz
Device:
Sample Part
Number:
MCRF250-I /40A
MCRF250-I/W40A = 125 kHz, Industrial temperature, wafer package,
anti-collision, 96 bit, FSK/8 /10,direct encoded, F/50
data return rate tag. The configuration register is:
CB12 CB11 CB10 CB9 CB8 CB7 CB6 CB5 CB4 CB3 CB2 CB1
0
1
0
0
0
0
0
0
1
0
1
0
1998 Microchip Technology Inc.
DS21267C-page 11
M
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All rights reserved. © 1998 Microchip Technology Incorporated. Printed in the USA. 9/98
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended for suggestion only and may be superseded by updates. No representation or war-
ranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual
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DS21267C-page 12
1998 Microchip Technology Inc.
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