MIC4422CT [MICROCHIP]
Buffer/Inverter Based MOSFET Driver, 9A, BCDMOS, PSFM5, TO-220, 5 PIN;
| 型号： | MIC4422CT |
| 厂家： | 
MICROCHIP |
| 描述： | Buffer/Inverter Based MOSFET Driver, 9A, BCDMOS, PSFM5, TO-220, 5 PIN 局域网 驱动 CD 接口集成电路 驱动器 |
| 文件： | 总12页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC4421/4422
9A-Peak Low-Side MOSFET Driver
Bipolar/CMOS/DMOS Process
General Description
Features
• BiCMOS/DMOS Construction
• Latch-Up Proof: Fully Isolated Process is Inherently
Immune to Any Latch-up.
MIC4421 and MIC4422 MOSFET drivers are rugged, ef-
ficient, and easy to use. The MIC4421 is an inverting driver,
while the MIC4422 is a non-inverting driver.
• Input Will Withstand Negative Swing of Up to 5V
• Matched Rise and Fall Times ............................... 25ns
• High Peak Output Current ...............................9A Peak
• Wide Operating Range.............................. 4.5V to 18V
• High Capacitive Load Drive...........................47,000pF
• Low Delay Time.............................................30ns Typ.
• Logic High Input for Any Voltage from 2.4V to VS
• Low Equivalent Input Capacitance (typ).................7pF
• Low Supply Current.............. 450µA With Logic 1 Input
• Low Output Impedance .........................................1.5Ω
• Output Voltage Swing to Within 25mV of GND or VS
Both versions are capable of 9A (peak) output and can drive
the largest MOSFETs with an improved safe operating mar-
gin. The MIC4421/4422 accepts any logic input from 2.4V to
VS without external speed-up capacitors or resistor networks.
Proprietary circuits allow the input to swing negative by as
much as 5V without damaging the part. Additional circuits
protect against damage from electrostatic discharge.
MIC4421/4422 drivers can replace three or more discrete
components, reducing PCB area requirements, simplifying
product design, and reducing assembly cost.
Applications
• Switch Mode Power Supplies
• Motor Controls
• Pulse Transformer Driver
• Class-D Switching Amplifiers
• Line Drivers
• Driving MOSFET or IGBT Parallel Chip Modules
• Local Power ON/OFF Switch
• Pulse Generators
Modern Bipolar/CMOS/DMOS construction guarantees
freedom from latch-up. The rail-to-rail swing capability of
CMOS/DMOS insures adequate gate voltage to the MOS-
FET during power up/down sequencing. Since these devices
are fabricated on a self-aligned process, they have very low
crossover current, run cool, use little power, and are easy
to drive.
Functional Diagram
VS
MIC4421
INVERTING
0.3mA
0.1mA
OUT
IN
2kΩ
MIC4422
NONINVERTING
GND
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
M9999-081005
August 2005
1
MIC4421/4422
Micrel, Inc.
Ordering Information
Part Number
Standard
PbFree
Configuration
Inverting
Temp. Range
–40ºC to +85ºC
–40ºC to +85ºC
–0ºC to +70ºC
–0ºC to +70ºC
–0ºC to +70ºC
–40ºC to +85ºC
–40ºC to +85ºC
–0ºC to +70ºC
–0ºC to +70ºC
–0ºC to +70ºC
Package
8-pin SOIC
8-pin DIP
MIC4421BM
MIC4421BN
MIC4421CM
MIC4421CN
MIC4421CT
MIC4422BM
MIC4422BN
MIC4422CM
MIC4422CN
MIC4422CT
MIC4421YM
MIC4421YN
MIC4421ZM
MIC4421ZN
MIC4421ZT
MIC4422YM
MIC4422YN
MIC4422ZM
MIC4422ZN
MIC4422ZT
Inverting
Inverting
8-pin SOIC
8-pin DIP
Inverting
Inverting
5-pin TO-220
8-pin SOIC
8-pin DIP
Non-inverting
Non-inverting
Non-inverting
Non-inverting
Non-inverting
8-pin SOIC
8-pin DIP
5-pin TO-220
Pin Configurations
VS
IN
VS
1
2
3
4
8
7
6
5
OUT
OUT
GND
NC
GND
Plastic DIP (N)
SOIC (M)
5
4
3
2
1
OUT
GND
VS
GND
IN
TO-220-5 (T)
Pin Description
Pin Number
Pin Number
Pin Name
Pin Function
TO-220-5
DIP, SOIC
1
2, 4
3, TAB
5
2
IN
GND
VS
Control Input
4, 5
1, 8
6, 7
3
Ground: Duplicate pins must be externally connected together.
Supply Input: Duplicate pins must be externally connected together.
Output: Duplicate pins must be externally connected together.
Not connected.
OUT
NC
M9999-081005
2
August 2005
MIC4421/4422
Micrel, Inc.
Absolute Maximum Ratings (Notes 1, 2 and 3)
Supply Voltage ..............................................................20V
Input Voltage ...................................VS + 0.3V to GND – 5V
Input Current (VIN > VS).............................................. 50 mA
Power Dissipation, TA ≤ 25°C
Operating Ratings
Junction Temperature................................................ 150°C
Ambient Temperature
C Version.................................................... 0°C to +70°C
B Version ................................................ –40°C to +85°C
Thermal Resistance
PDIP ....................................................................960mW
SOIC..................................................................1040mW
5-Pin TO-220 ..............................................................2W
Power Dissipation, TCASE ≤ 25°C
5-Pin TO-220 (θJC) ...............................................10°C/W
5-Pin TO-220 .........................................................12.5W
Derating Factors (to Ambient)
PDIP ................................................................7.7mW/°C
SOIC................................................................8.3mW/°C
5-Pin TO-220 ....................................................17mW/°C
Storage Temperature................................ –65°C to +150°C
Lead Temperature (10 sec) ....................................... 300°C
Electrical Characteristics: (TA = 25°C with 4.5 V ≤ VS ≤ 18 V unless otherwise specified.)
Symbol
INPUT
VIH
Parameter
Conditions
Min
Typ
Max
Units
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Voltage Range
Input Current
2.4
1.3
1.1
V
V
VIL
0.8
VS+0.3
10
VIN
–5
V
IIN
0 V ≤ VIN ≤ VS
–10
µA
OUTPUT
VOH
High Output Voltage
Low Output Voltage
See Figure 1
VS–.025
V
V
Ω
VOL
See Figure 1
0.025
1.7
RO
Output Resistance,
Output High
IOUT = 10 mA, VS = 18 V
0.6
0.8
9
RO
Output Resistance,
Output Low
IOUT = 10 mA, VS = 18 V
VS = 18 V (See Figure 6)
Ω
IPK
IDC
IR
Peak Output Current
A
A
Continuous Output Current
2
Latch-Up Protection
Withstand Reverse Current
Duty Cycle ≤ 2%
t ≤ 300 µs
>1500
mA
SWITCHING TIME (Note 3)
tR
Rise Time
Fall Time
Test Figure 1, CL = 10,000 pF
Test Figure 1, CL = 10,000 pF
Test Figure 1
20
24
15
35
75
75
60
60
ns
ns
ns
ns
tF
tD1
tD2
Delay Time
Delay Time
Test Figure 1
POWER SUPPLY
IS
Power Supply Current
VIN = 3 V
VIN = 0 V
0.4
80
1.5
150
mA
µA
VS
Operating Input Voltage
4.5
18
V
August 2005
3
M9999-081005
MIC4421/4422
Micrel, Inc.
Electrical Characteristics: (Over operating temperature range with 4.5V ≤ VS ≤ 18V unless otherwise specified.)
Symbol
INPUT
VIH
Parameter
Conditions
Min
Typ
Max
Units
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Voltage Range
Input Current
2.4
1.4
1.0
V
V
VIL
0.8
VS+0.3
10
VIN
–5
V
IIN
0V ≤ VIN ≤ VS
–10
µA
OUTPUT
VOH
High Output Voltage
Low Output Voltage
Figure 1
VS–.025
V
V
Ω
VOL
Figure 1
0.025
3.6
RO
Output Resistance,
Output High
IOUT = 10mA, VS = 18V
0.8
1.3
RO
Output Resistance,
Output Low
IOUT = 10mA, VS = 18V
2.7
Ω
SWITCHING TIME (Note 3)
tR
Rise Time
Fall Time
Figure 1, CL = 10,000pF
Figure 1, CL = 10,000pF
Figure 1
23
30
20
40
120
120
80
ns
ns
ns
ns
tF
tD1
tD2
Delay Time
Delay Time
Figure 1
80
POWER SUPPLY
IS
Power Supply Current
VIN = 3V
VIN = 0V
0.6
0.1
3
0.2
mA
V
VS
Operating Input Voltage
4.5
18
Note 1:
Note 2:
Functional operation above the absolute maximum stress ratings is not implied.
Static-sensitive device. Store only in conductive containers. Handling personnel and equipment should be grounded to
prevent damage from static discharge.
Note 3:
Switching times guaranteed by design.
Test Circuits
VS = 18V
VS = 18V
0.1µF
4.7µF
0.1µF
4.7µF
0.1µF
0.1µF
IN
OUT
15000pF
IN
OUT
15000pF
MIC4421
MIC4422
5V
90%
5V
90%
2.5V
tPW≥ 0.5µs
2.5V
tPW≥ 0.5µs
INPUT
INPUT
10%
0V
10%
0V
tPW
tPW
tD1
tF
tD2
tR
tD1
tF
tR
tD2
VS
VS
90%
90%
OUTPUT
OUTPUT
10%
0V
10%
0V
Figure 2. Noninverting Driver Switching Time
August 2005
Figure 1. Inverting Driver Switching Time
M9999-081005
4
MIC4421/4422
Micrel, Inc.
Typical Characteristics
Rise Time
Fall Time
Rise and Fall Times
vs. Supply Voltage
vs. Supply Voltage
vs. Temperature
220
220
200
180
160
140
120
100
80
60
50
40
30
20
10
0
200
180
160
140
CL = 10,000pF
VS = 18V
tFALL
47,000pF
47,000pF
120
100
80
60
40
20
0
22,000pF
10,000pF
tRISE
22,000pF
10,000pF
60
40
20
0
-40
0
40
80
120
4
6
8
10 12 14 16 18
4
6
8
10 12 14 16 18
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
Rise Time
Crossover Energy
vs. Supply Voltage
Fall Time
vs. Capacitive Load
vs. Capacitive Load
10-7
300
250
200
150
100
50
300
250
200
150
100
50
PER TRANSITION
5V
5V
10-8
10V
10V
18V
18V
0
10-9
0
100
1000
10k
100k
100
1000
10k
100k
4
6
8
10 12 14 16 18
CAPACITIVE LOAD (pF)
VOLTAGE (V)
CAPACITIVE LOAD (pF)
Supply Current
Supply Current
Supply Current
vs. Capacitive Load
vs. Capacitive Load
vs. Capacitive Load
220
200
180
160
140
120
100
80
150
75
60
45
30
15
0
VS = 18V
VS = 12V
VS = 5V
120
90
60
30
0
1 MHz
z
z
z
60
1 MHz
1 MHz
50kH
50kH
50kH
40
200kHz
200kHz
200kHz
20
0
100
1000
10k
100k
100
1000
10k
100k
100
1000
10k
100k
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
Supply Current
vs. Frequency
Supply Current
vs. Frequency
Supply Current
vs. Frequency
180
160
140
120
100
80
120
100
80
60
40
20
0
60
50
40
30
20
10
0
VS = 18V
VS = 12V
VS = 5V
0.01µF
0.01µF
0.1µF
0.1µF
0.1µF
0.01µF
1000pF
1000pF
60
1000pF
40
20
0
10k
100k
1M
10M
10k
100k
1M
10M
10k
100k
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
FREQUENCY (Hz)
August 2005
5
M9999-081005
MIC4421/4422
Micrel, Inc.
Typical Characteristics
Propagation Delay
Propagation Delay
vs. Input Amplitude
Propagation Delay
vs. Supply Voltage
vs. Temperature
50
120
110
100
90
80
70
60
50
40
30
20
10
0
50
40
30
20
10
0
VS = 10V
40
tD2
30
tD2
20
tD2
tD1
tD1
10
tD1
0
4
6
8
10 12 14 16 18
0
2
4
6
8
10
-40
0
40
80
120
SUPPLY VOLTAGE (V)
INPUT (V)
TEMPERATURE (°C)
Quiescent Supply Current
vs. Temperature
High-State Output Resist.
Low-State Output Resist.
vs. Supply Voltage
2.4
vs. Supply Voltage
1000
2.4
VS = 18V
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
INPUT = 1
INPUT = 0
TJ = 150°C
TJ = 25°C
TJ = 150°C
100
10
TJ = 25°C
-40
0
40
80
120
4
6
8
10 12 14 16 18
4
6
8
10 12 14 16 18
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
M9999-081005
6
August 2005
MIC4421/4422
Micrel, Inc.
To guarantee low supply impedance over a wide frequency
range, a parallel capacitor combination is recommended for
supply bypassing. Low inductance ceramic disk capacitors
with short lead lengths (< 0.5 inch) should be used.A1µF low
ESRfilmcapacitorinparallelwithtwo0.1µFlowESRceramic
Applications Information
Supply Bypassing
Charging and discharging large capacitive loads quickly
requires large currents. For example, charging a 10,000pF
load to 18V in 50ns requires 3.6A.
®
capacitors, (such as AVX RAM Guard ), provides adequate
bypassing. Connect one ceramic capacitor directly between
pins 1 and 4. Connect the second ceramic capacitor directly
between pins 8 and 5.
The MIC4421/4422 has double bonding on the supply pins,
the ground pins and output pins. This reduces parasitic
lead inductance. Low inductance enables large currents to
be switched rapidly. It also reduces internal ringing that can
cause voltage breakdown when the driver is operated at or
near the maximum rated voltage.
Grounding
The high current capability of the MIC4421/4422 demands
careful PC board layout for best performance. Since the
MIC4421 is an inverting driver, any ground lead impedance
willappearasnegativefeedbackwhichcandegradeswitching
speed. Feedback is especially noticeable with slow-rise time
inputs. The MIC4421 input structure includes about 200mV
of hysteresis to ensure clean transitions and freedom from
oscillation, but attention to layout is still recommended.
Internal ringing can also cause output oscillation due to
feedback. This feedback is added to the input signal since it
is referenced to the same ground.
V
S
Figure 5 shows the feedback effect in detail. As the MIC4421
input begins to go positive, the output goes negative and
several amperes of current flow in the ground lead. As little
as 0.05Ω of PC trace resistance can produce hundreds of
millivolts at the MIC4421 ground pins. If the driving logic is
referenced to power ground, the effective logic input level is
reduced and oscillation may result.
1µF
V
MIC4451
S
Ø
2
Ø
DRIVE SIGNAL
1
DRIVE
LOGIC
CONDUCTION ANGLE
CONTROL 0° TO 180°
Ø
M
Ø
3
1
To insure optimum performance, separate ground traces
should be provided for the logic and power connections. Con-
necting the logic ground directly to the MIC4421 GND pins
will ensure full logic drive to the input and ensure fast output
switching. Both of the MIC4421 GND pins should, however,
still be connected to power ground.
CONDUCTION ANGLE
CONTROL 180° TO 360°
V
S
V
1µF
S
MIC4452
PHASE 1 of 3 PHASE MOTOR
DRIVER USING MIC4420/4429
Figure 3. Direct Motor Drive
+15
(x2) 1N4448
5.6kΩ
OUTPUT VOLTAGE vs LOAD CURRENT
30
560 Ω
0.1µF
50V
29
28
+
1µF
12 Ω LIN
E
50V
BYV 10 (x 2)
27
26
25
1
MKS2
8
6, 7
+
2
MIC4421
0.1µF
WIMA
MKS2
+
0
50 100 150 200 250 300 350
mA
5
560µF 50V
100µF 50V
4
UNITED CHEMCON SXE
Figure 4. Self Contained Voltage Doubler
August 2005
7
M9999-081005
MIC4421/4422
Micrel, Inc.
Input Stage
dissipation limit can easily be exceeded. Therefore, some
attention should be given to power dissipation when driving
low impedance loads and/or operating at high frequency.
The input voltage level of the MIC4421 changes the quies-
cent supply current. The N channel MOSFET input stage
transistor drives a 320µA current source load. With a logic
“1” input, the maximum quiescent supply current is 400µA.
Logic “0” input level signals reduce quiescent current to
80µA typical.
The supply current vs. frequency and supply current vs
capacitive load characteristic curves aid in determining
power dissipation calculations. Table 1 lists the maximum
safe operating frequency for several power supply volt-
ages when driving a 10,000pF load. More accurate power
dissipation figures can be obtained by summing the three
dissipation sources.
The MIC4421/4422 input is designed to provide 300mV of
hysteresis. This provides clean transitions, reduces noise
sensitivity, and minimizes output stage current spiking
when changing states. Input voltage threshold level is ap-
proximately 1.5V, making the device TTL compatible over
the full temperature and operating supply voltage ranges.
Input current is less than ±10µA.
Given the power dissipation in the device, and the thermal
resistance of the package, junction operating temperature
for any ambient is easy to calculate. For example, the
thermal resistance of the 8-pin plastic DIP package, from
the data sheet, is 130°C/W. In a 25°C ambient, then, using
a maximum junction temperature of 150°C, this package
will dissipate 960mW.
The MIC4421 can be directly driven by the TL494,
SG1526/1527, SG1524, TSC170, MIC38C42, and similar
switchmodepowersupplyintegratedcircuits. Byoffloading
the power-driving duties to the MIC4421/4422, the power
supply controller can operate at lower dissipation. This can
improve performance and reliability.
Accurate power dissipation numbers can be obtained by
summing the three sources of power dissipation in the
device:
The input can be greater than the VS supply, however, cur-
rent will flow into the input lead. The input currents can be
as high as 30mAp-p (6.4mA ) with the input. No damage
will occur to MIC4421/4422RhMoSwever, and it will not latch.
• Load Power Dissipation (PL)
• Quiescent power dissipation (P )
• Transition power dissipation (PTQ)
Calculation of load power dissipation differs depending on
whether the load is capacitive, resistive or inductive.
The input appears as a 7pF capacitance and does not
change even if the input is driven from an AC source.
While the device will operate and no damage will occur up
to 25V below the negative rail, input current will increase
up to 1mA/V due to the clamping action of the input, ESD
diode, and 1kΩ resistor.
Resistive Load Power Dissipation
Dissipation caused by a resistive load can be calculated
as:
PL = I2 RO D
where:
Power Dissipation
CMOS circuits usually permit the user to ignore power
dissipation. Logic families such as 4000 and 74C have out-
puts which can only supply a few milliamperes of current,
and even shorting outputs to ground will not force enough
current to destroy the device. The MIC4421/4422 on the
other hand, can source or sink several amperes and drive
largecapacitiveloadsathighfrequency.Thepackagepower
I = the current drawn by the load
RO = the output resistance of the driver when the output
is high, at the power supply voltage used. (See data
sheet)
D = fraction of time the load is conducting (duty cycle)
+18
WIMA
MKS-2
1 µF
5.0V
18 V
1
TEK CURRENT
PROBE 6302
8
5
6, 7
Table 1: MIC4421 Maximum
Operating Frequency
MIC4421
4
0 V
0 V
0.1µF
0.1µF
VS
Max Frequency
220kHz
2,500 pF
POLYCARBONATE
18V
15V
10V
5V
LOGIC
GROUND
6 AMPS
PC TRACE RESISTANCE = 0.05Ω
300kHz
300 mV
640kHz
POWE
R
GROUND
2MHz
Conditions:
1. θJA = 150°C/W
2. TA = 25°C
3. CL = 10,000pF
Figure 5. Switching Time Degradation Due to
Negative Feedback
M9999-081005
8
August 2005
MIC4421/4422
Micrel, Inc.
Capacitive Load Power Dissipation
Transition Power Dissipation
Dissipation caused by a capacitive load is simply the energy
placed in, or removed from, the load capacitance by the
driver. The energy stored in a capacitor is described by the
equation:
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for a
very brief interval, both the N- and P-channel MOSFETs in
the output totem-pole are ON simultaneously, and a current
is conducted through them from VS to ground. The transition
power dissipation is approximately:
E = 1/2 C V2
Asthisenergyislostinthedrivereachtimetheloadischarged
or discharged, for power dissipation calculations the 1/2 is
removed. This equation also shows that it is good practice
not to place more voltage in the capacitor than is necessary,
as dissipation increases as the square of the voltage applied
to the capacitor. For a driver with a capacitive load:
PT = 2 f VS (A•s)
where (A•s) is a time-current factor derived from the typical
characteristic curve “Crossover Energy vs. Supply Volt-
age.”
Total power (PD) then, as previously described is just
PD = PL + PQ + PT
PL = f C (VS)2
where:
Definitions
f = Operating Frequency
C = Load Capacitance
VS =Driver Supply Voltage
CL = Load Capacitance in Farads.
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
Inductive Load Power Dissipation
f = Operating Frequency of the driver in Hertz
For inductive loads the situation is more complicated. For
the part of the cycle in which the driver is actively forcing
current into the inductor, the situation is the same as it is in
the resistive case:
IH = Power supply current drawn by a driver when both
inputs are high and neither output is loaded.
IL = Power supply current drawn by a driver when both
inputs are low and neither output is loaded.
PL1 = I2 RO D
However, in this instance the R required may be either
the on resistance of the driver whOen its output is in the high
state, or its on resistance when the driver is in the low state,
depending on how the inductor is connected, and this is still
only half the story. For the part of the cycle when the induc-
tor is forcing current through the driver, dissipation is best
described as
ID = Output current from a driver in Amps.
PD = Total power dissipated in a driver in Watts.
PL = Power dissipated in the driver due to the driver’s
load in Watts.
PQ = Power dissipated in a quiescent driver in Watts.
PL2 = I VD (1 – D)
PT = Power dissipated in a driver when the output
changes states (“shoot-through current”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers is
stated in Figure 7 in ampere-nanoseconds. This
figure must be multiplied by the number of repeti-
tions per second (frequency) to find Watts.
where V is the forward drop of the clamp diode in the driver
(generalDly around 0.7V). The two parts of the load dissipation
must be summed in to produce PL
PL = PL1 + PL2
Quiescent Power Dissipation
RO = Output resistance of a driver in Ohms.
VS = Power supply voltage to the IC in Volts.
Quiescent power dissipation (P , as described in the input
section) depends on whether thQe input is high or low. A low
input will result in a maximum current drain (per driver) of
≤0.2mA; a logic high will result in a current drain of ≤ 3.0mA.
Quiescent power can therefore be found from:
PQ = VS [D IH + (1 – D) IL]
where:
I = quiescent current with input high
IHL = quiescent current with input low
D = fraction of time input is high (duty cycle)
VS = power supply voltage
August 2005
9
M9999-081005
MIC4421/4422
Micrel, Inc.
+18
V
WIMA
MK22
1 µF
5.0V
18 V
1
TEK CURRENT
PROBE 6302
8
2
6, 7
MIC4421
0 V
5
0 V
0.1µF
0.1µF
4
10,000 pF
POLYCARBONATE
Figure 6. Peak Output Current Test Circuit
M9999-081005
10
August 2005
MIC4421/4422
Micrel, Inc.
Package Information
PIN 1
INCH (MM)
0.370 (9.40)
0.245 (6.22)
0.300 (7.62)
0.125 (3.18)
0.013 (0.330)
0.010 (0.254)
0.018 (0.57)
0.100 (2.54)
0.130 (3.30)
0.0375 (0.952)
8-Pin Plastic DIP (N)
MAX )
PIN 1
INCHES (MM)
0.150 (3.81)
0.013 (0.33)
45°
TYP
0.010 (0.25)
0.007 (0.18)
0.0040 (0.102)
0°–8°
0.189 (4.8)
0.016 (0.40)
0.228 (5.79)
PLANE
0.045 (1.14)
8-Pin SOIC (M)
August 2005
11
M9999-081005
MIC4421/4422
Micrel, Inc.
0.112 (2.84)
0.032 (0.81)
0.187 (4.74)
0.116 (2.95)
INCH (MM)
0.038 (0.97)
0.007 (0.18)
0.005 (0.13)
0.012 (0.30) R
5°
0° MIN
0.012 (0.03)
0.012 (0.03) R
0.004 (0.10)
0.0256 (0.65) TYP
0.035 (0.89)
0.021 (0.53)
8-Pin MSOP (MM)
0.150 D ±0.005
(3.81 D ±0.13)
0.177 ±0.008
(4.50 ±0.20)
0.400 ±0.015
(10.16 ±0.38)
0.050 ±0.005
(1.27 ±0.13)
0.108 ±0.005
(2.74 ±0.13)
0.241 ±0.017
(6.12 ±0.43)
0.578 ±0.018
(14.68 ±0.46)
SEATING
PLANE
7°
Typ.
0.550 ±0.010
(13.97 ±0.25)
0.067 ±0.005
(1.70 ±0.127)
0.032 ±0.005
(0.81 ±0.13)
0.018 ±0.008
(0.46 ±0.20)
0.103 ±0.013
(2.62 ±0.33)
0.268 REF
(6.81 REF)
inch
(mm)
Dimensions:
5-Lead TO-220 (T)
MICREL INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB http://www.micrel.com
This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use.
Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can
reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into
the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser's
use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser's own risk and Purchaser agrees to fully indemnify
Micrel for any damages resulting from such use or sale.
© 2004 Micrel, Inc.
M9999-081005
12
August 2005
相关型号：
©2020 ICPDF网 联系我们和版权申明