MIC45116-1YMP-TR [MICROCHIP]
DC-DC REG PWR SUPPLY MODULE;
| 型号： | MIC45116-1YMP-TR |
| 厂家： | 
MICROCHIP |
| 描述： | DC-DC REG PWR SUPPLY MODULE |
| 文件： | 总42页 (文件大小：3049K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC45116
20V/6A DC/DC Power Module
Features
General Description
• Up to 6A Output Current
• >93% Peak Efficiency
The MIC45116 is a synchronous step-down regulator
module, featuring a unique adaptive ON-time control
architecture. The module incorporates a DC/DC
controller, power MOSFETs, bootstrap diode, bootstrap
capacitor, and an inductor in a single package;
simplifying the design and layout process for the end
user.
• Output Voltage of 0.8V to 85% of Input with ±1%
Accuracy
• Fixed 600 kHz Switching Frequency
• Enable Input and Open-Drain Power Good Output
• HyperLight Load® (MIC45116-1) Improves Light
Load Efficiency
• Hyper Speed Control® (MIC45116-2) Architecture
Enables Fast Transient Response
This highly integrated solution expedites system
design and improves product time-to-market. The
internal MOSFETs and inductor are optimized to
achieve high efficiency at a low output voltage. The fully
optimized design can deliver up to 6A current under a
wide input voltage range of 4.75V to 20V without
requiring additional cooling.
• Supports Safe Start-Up into Pre-Biased Output
• –40°C to +125°C Junction Temperature Range
• Thermal Shutdown Protection
The MIC45116-1 uses HyperLight Load® (HLL) which
maintains high efficiency under light load conditions by
transitioning to variable frequency, discontinuous-
mode operation. The MIC45116-2 uses Hyper Speed
Control® architecture which enables ultra-fast load
transient response, allowing for a reduction of output
capacitance. The MIC45116 offers 1% output accuracy
that can be adjusted from 0.8V to 85% of the input
(PVIN) with two external resistors. Additional features
include thermal-shutdown protection, adjustable
current limit, and short-circuit protection. The
MIC45116 allows for safe start-up into a pre-biased
output.
• Short-Circuit Protection with Hiccup Mode
• Adjustable Current Limit
• Available in 52-Pin 8 mm x 8 mm x 3 mm QFN
Package
Applications
• High Power Density Point-of-Load Conversion
• Servers, Routers, Networking, and Base Stations
• FPGAs, DSP, and Low-Voltage ASIC Power
Supplies
• Industrial and Medical Equipment
Typical Application Circuit
MIC45116
8x8x3 QFN
PVDD
5VDD
PG
10k
VOUT
VIN
PVIN
VOUT
FB
CFF
RFB1
RFB2
MIC45116
VIN
COUT
CIN
RINJ
EN
CINJ
SW
RLIM
ILIM
PGND
2016 Microchip Technology Inc.
DS20005571A-page 1
MIC45116
Package Type
MIC45116
8x8x3 QFN (MP)
50
49
47
52
48
44
43
42
51
46
45
41
40
39
NC
NC
VIN
EN
PG
1
2
PVIN
PVIN
KEEPOUT
PVDD
3
38
37
4
5
BST
PGND ePAD
36
35
34
FB
6
7
8
BST
PGND
NC
KEEPOUT
SW
SW ePAD
33
32
31
NC
9
SW
SW
NC
10
11
PGND
NC
KEEPOUT
VOUT
30
29
28
27
12
13
14
15
PGND ePAD
VOUT ePAD
NC
NC
NC
VOUT
VOUT
VOUT
24
25
26
16
17
18
21
22
23
19
20
DS20005571A-page 2
2016 Microchip Technology Inc.
MIC45116
Functional Block Diagram
MIC45116
VIN
VIN
BST
BST
PVDD
5VDD
PVDD
VDD
PVIN
CONTROLLER
PVDD
SW
DH
EN
PG
FB
EN
PG
SW
VOUT
DL
FB
AGND
PGND
PGND
ILIM
ILIM
2016 Microchip Technology Inc.
DS20005571A-page 3
MIC45116
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
PVIN – VIN to PGND..................................................................................................................................... –0.3V to +30V
PVDD – 5VDD to PGND.................................................................................................................................. –0.3V to +6V
VSW, VILIM, VEN to PGND ................................................................................................................. –0.3V to (VIN + 0.3V)
VBST to VSW ................................................................................................................................................. –0.3V to +6V
VBST to PGND.............................................................................................................................................. –0.3V to +36V
VPG to PGND................................................................................................................................. –0.3V to (5VDD + 0.3V)
VFB to PGND ................................................................................................................................. –0.3V to (5VDD + 0.3V)
ESD Rating(Note 1)....................................................................................................................................ESD Sensitive
Operating Ratings ‡
Supply Voltage (PVIN – VIN).....................................................................................................................+4.75V to +20V
Output Current ..............................................................................................................................................................6A
Enable Input (VEN) ............................................................................................................................................. 0V to VIN
Power Good (VPG) .......................................................................................................................................... 0V to 5VDD
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice: The device is not guaranteed to function outside its operating ratings.
Note 1: Devices are ESD sensitive. Handling precautions are recommended.
DS20005571A-page 4
2016 Microchip Technology Inc.
MIC45116
TABLE 1-1:
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: VIN = VEN = 12V, VOUT = 3.3V, VBST – VSW = 5V, TJ = +25ºC. Bold values indicate
–40°C ≤ TJ ≤ +125°C, unless otherwise noted. (Note 1).
Symbol
Parameters
Min.
Typ.
Max.
Units
Conditions
Power Supply Input
VIN, PVIN Input Voltage Range
4.75
—
20
V
—
IQ
IQ
IIN
Quiescent Supply Current
(MIC45116-1)
—
0.35
0.75
mA
VFB = 1.5V
Quiescent Supply Current
(MIC45116-2)
—
—
1.03
29.4
—
—
mA
mA
VFB = 1.5V
Operating Current
PVIN = VIN = 12V,
VOUT = 1.8V, IOUT = 0A
(MIC45116-2)
ISHDN
Shutdown Supply Current
—
5.3
5.2
10
µA
V
VEN = 0V
5VDD Output
VDD
5VDD Output Voltage
4.8
5.4
VIN = 7V to 20V,
I5VDD = 10 mA
UVLO
5VDD UVLO Threshold
5VDD UVLO Hysteresis
5VDD Load Regulation
3.8
—
4.2
400
2
4.6
—
V
mV
%
V5VDD Rising
V5VDD Falling
UVLO_HYS
—
0.6
3.6
I5VDD = 0 mA to 40 mA
Reference
VFB
Feedback Reference Voltage
0.792
0.784
—
0.8
0.8
5
0.808
0.816
500
V
TJ = 25°C
–40°C ≤ TJ ≤ +125°C
VFB = 0.8V
IFB_BIAS FB Bias Current
nA
Enable Control
ENHIGH
ENLOW
ENHYS
IENBIAS
Oscillator
fSW
EN Logic Level High
EN Logic Level Low
EN Hysteresis
1.8
—
—
—
—
—
—
0.6
—
V
V
—
—
200
5
mV
µA
—
EN Bias Current
10
VEN = 12V
Switching Frequency
Maximum Duty Cycle
Minimum Duty Cycle
400
—
600
85
750
—
kHz
%
IOUT = 2A
—
DMAX
DMIN
—
0
—
%
VFB = 1V
—
tOFF(MIN) Minimum Off-Time
140
250
350
ns
Soft-Start
tSS
Soft-Start Time
—
3.3
—
ms
FB from 0V to 0.8V
Short-Circuit Protection
VCL
VSC
ICL
Current-Limit Threshold
–30
–23
60
–14
–7
0
9
mV
mV
µA
VFB = 0.79V
VFB = 0V
Short-Circuit Threshold
Current-Limit Source Current
Short-Circuit Source Current
80
100
45
VFB = 0.79V
VFB = 0V
ISC
25
35
µA
Note 1: Specification for packaged product only.
2016 Microchip Technology Inc.
DS20005571A-page 5
MIC45116
TABLE 1-1:
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: VIN = VEN = 12V, VOUT = 3.3V, VBST – VSW = 5V, TJ = +25ºC. Bold values indicate
–40°C ≤ TJ ≤ +125°C, unless otherwise noted. (Note 1).
Symbol
Parameters
Min.
Typ.
Max.
Units
Conditions
Power Good (PG)
VPG_TH
VPG_HYS PG Hysteresis
tPG_DLY PG Delay Time
PG Threshold Voltage
85
—
—
—
88
6
95
—
% VFB
% VFB
µs
Sweep VFB from low-to-high
Sweep VFB from high-to-low
Sweep VFB from low-to-high
VFB < 90% x VNOM, IPG = 1 mA
80
60
—
VPG_LOW PG Low Voltage
200
mV
Thermal Protection
TSHD
Overtemperature Shutdown
—
—
160
15
—
—
°C
°C
TJ rising
—
TSHD_HYS
Overtemperature Shutdown
Hysteresis
Note 1: Specification for packaged product only.
DS20005571A-page 6
2016 Microchip Technology Inc.
MIC45116
TEMPERATURE SPECIFICATIONS
Parameters
Temperature Ranges
Sym.
Min.
Typ.
Max.
Units
Conditions
Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature
TJ
—
TS
—
–40
—
—
—
—
—
+125
+150
+150
+260
°C
°C
°C
°C
Note 1
—
–65
—
—
Soldering, 10s
Package Thermal Resistances
52-pin 8 mm x 8 mm x 3 mm QFN
52-pin 8 mm x 8 mm x 3 mm QFN
JA
JC
—
—
22
5
—
—
°C/W Note 2
°C/W Note 2
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
2:
JA and JC were measured using the MIC45116 evaluation board.
2016 Microchip Technology Inc.
DS20005571A-page 7
MIC45116
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
FIGURE 2-1:
V
Operating Supply
FIGURE 2-4:
Feedback Voltage vs.
IN
Current vs. Temperature (MIC45116-1).
Temperature.
FIGURE 2-2:
V
Shutdown Current vs.
FIGURE 2-5:
Switching Frequency vs.
IN
Temperature.
Temperature.
FIGURE 2-3:
V
Voltage vs.
FIGURE 2-6:
Output Current Limit vs.
DD
Temperature.
Temperature.
DS20005571A-page 8
2016 Microchip Technology Inc.
MIC45116
FIGURE 2-7:
V
UVLO Threshold vs.
FIGURE 2-10:
Output Voltage vs.
DD
Temperature.
Temperature (MIC45116-1).
FIGURE 2-11:
Temperature (MIC45116-1).
Load Regulation vs.
FIGURE 2-8:
Temperature.
Enable Threshold vs.
FIGURE 2-12:
Line Regulation vs.
FIGURE 2-9:
EN Bias Curent vs.
Temperature (MIC45116-1).
Temperature.
2016 Microchip Technology Inc.
DS20005571A-page 9
MIC45116
FIGURE 2-13:
Efficiency (V = 5V) vs.
FIGURE 2-16:
Efficiency (V = 5V) vs.
IN
IN
Output Current (MIC45116-1).
Output Current (MIC45116-2).
FIGURE 2-14:
Efficiency (V = 12V) vs.
FIGURE 2-17:
Efficiency (V = 12V) vs.
IN
IN
Output Current (MIC45116-1).
Output Current (MIC45116-2).
FIGURE 2-15:
Efficiency (V = 18V) vs.
FIGURE 2-18:
Efficiency (V = 18V) vs.
IN
IN
Output Current (MIC45116-1).
Output Current (MIC45116-2).
DS20005571A-page 10
2016 Microchip Technology Inc.
MIC45116
FIGURE 2-22:
5V) vs. Output Current (MIC45116-2).
Power Dissipation (V
=
=
=
FIGURE 2-19:
5V) vs. Output Current (MIC45116-1).
Power Dissipation (V
=
=
=
IN
IN
IN
IN
IN
IN
FIGURE 2-23:
12V) vs. Output Current (MIC45116-2).
Power Dissipation (V
FIGURE 2-20:
12V) vs. Output Current (MIC45116-1).
Power Dissipation (V
FIGURE 2-24:
18V) vs. Output Current (MIC45116-2).
Power Dissipation (V
FIGURE 2-21:
18V) vs. Output Current (MIC45116-1).
Power Dissipation (V
2016 Microchip Technology Inc.
DS20005571A-page 11
MIC45116
FIGURE 2-25:
Line Regulation vs. Output
FIGURE 2-28:
Line Regulation vs. Output
Current (MIC45116-1).
Current (MIC45116-2).
FIGURE 2-26:
Output Voltage vs. Output
FIGURE 2-29:
Output Voltage vs. Output
Current (MIC45116-1).
Current (MIC45116-2).
FIGURE 2-27:
Switching Frequency vs.
FIGURE 2-30:
Switching Frequency vs.
Output Current (MIC45116-1).
Output Current (MIC45116-2).
DS20005571A-page 12
2016 Microchip Technology Inc.
MIC45116
FIGURE 2-31:
Feedback Voltage vs. Input
FIGURE 2-34:
Feedback Voltage vs. Input
Voltage (MIC45116-1).
Voltage (MIC45116-2).
FIGURE 2-32:
Output Regulation vs. Input
FIGURE 2-35:
Output Regulation vs. Input
Voltage (MIC45116-1).
Voltage (MIC45116-2).
FIGURE 2-33:
Switching Frequency vs.
FIGURE 2-36:
Switching Frequency vs.
Input Voltage (MIC45116-1).
Input Voltage (MIC45116-2).
2016 Microchip Technology Inc.
DS20005571A-page 13
MIC45116
VIN
(5V/div)
VOUT
VIN = 12V
VOUT = 1.8V
IOUT = 6A
(1V/div)
V
(5V/diPvG)
IIN
(2A/div)
Time (2.0ms/div)
FIGURE 2-37:
Enable Input Current vs.
FIGURE 2-40:
V
Soft Turn-Off.
IN
Input Voltage.
VIN = 12V
VOUT = 1.8V
OUT = 6A
I
VEN
(2V/div)
VOUT
(1V/div)
V
(5V/diPvG)
IIN
(1A/div)
Time (2.0ms/div)
FIGURE 2-41:
Enable Turn-On Delay and
FIGURE 2-38:
Enable Threshold vs. Input
Rise Time.
Voltage.
VIN = 12V
VIN = 12V
VOUT = 1.8V
OUT = 6A
VOUT = 1.8V
I
OUT = 6A
I
VEN
(2V/div)
VIN
(5V/div)
VOUT
(1V/div)
V
VOUT
(1V/div)
V
(5V/diPvG)
(5V/diPvG)
IIN
IIN
(2A/div)
(1A/div)
Time (2.0ms/div)
Time (40μs/div)
FIGURE 2-42:
Enable Turn-On Delay and
FIGURE 2-39:
V
Soft Turn-On.
IN
Fall Time.
DS20005571A-page 14
2016 Microchip Technology Inc.
MIC45116
V
= 12V
VOUTIN= 1.8V
VEN
(2V/div)
VEN
(2V/div)
I
OUT = Short Wire across output
VOUT
(1V/div)
V
VOUT
(200mV/div)
(5V/diPvG)
V
= 12V
VOUTIN= 1.8V
IOUT = 0A
IIN
(200mA/div)
VPRE-BIAS = 1.2V
Time (2.0ms/div)
Time (400μs/div)
FIGURE 2-43:
Enable Start-Up with
FIGURE 2-46:
Enabled Into Short-Circuit.
Pre-Biased Output.
VIN = 12V
VOUT = 1.8V
I
OUT = 6A
VEN
(2V/div)
VOUT
(1V/div)
VOUT
(1V/div)
V
(5V/diPvG)
V
(5V/diPvG)
VIN = 12V
VOUT = 1.8V
IOUT = 6A
IOUT
(5A/div)
IIN
(1A/div)
Time (200μs/div)
Time (2ms/div)
FIGURE 2-47:
Short-Circuit During Steady
FIGURE 2-44:
Enable Turn-On/Turn-Off.
State.
V
= 12V
VOUTIN= 1.8V
IOUT = Short wire across output
VIN
VOUT
(5V/div)
VOUT
(200mV/div)
(1V/div)
V
(5V/diPvG)
V
= 12V
VIONUT = 1.8V
IIN
IOUT
(5A/div)
I
OUT = 6A
(500mA/div)
Time (2.0ms/div)
Time (2.0ms/div)
FIGURE 2-45:
Power Up Into Short-Circuit.
FIGURE 2-48:
Output Recovery from
Short-Circuit.
2016 Microchip Technology Inc.
DS20005571A-page 15
MIC45116
VIN = 12V
VIN = 12V
VOUT = 1.8V
VOUT = 1.8V
I
OUT = 6A
I
PK_CL = 8.1A
VOUT
(1V/div)
VOUT
(1V/div)
V
(10V/diSvW)
V
(5V/diPvG)
V
(5V/diPvG)
IOUT
(5A/div)
IOUT
(5A/div)
Time (400μs/div)
Time (2ms/div)
FIGURE 2-49:
Peak Current-Limit
FIGURE 2-52:
Output Recovery from
Threshold.
Thermal Shutdown.
VIN = 12V
VOUT = 1.8V
OUT = 6A
I
VOUT
(AC-Coupled)
(20mV/div)
VIN
(5V/div)
VOUT
(1V/div)
V
V
(5V/diSvW)
(5V/diPvG)
V
= 12V
VIONUT = 1.8A
IOUT = 6A
IIN
IOUT
(5A/div)
(1A/div)
Time (2ms/div)
Time (400ns/div)
FIGURE 2-50:
Inrush with 3000 µF.
FIGURE 2-53:
MIC45116-1 Switching
= 6A).
Waveforms (I
OUT
VIN = 12V
VOUT = 1.8V
OUT = 6A
I
VOUT
VOUT
(AC-Coupled)
(20mV/div)
(1V/div)
V
(10V/diSvW)
V
V
VIN = 12V
VOUT = 1.8V
OUT = 0A
(5V/diPvG)
(5V/diSvW)
I
IOUT
(5A/div)
IOUT
(5A/div)
Time (1ms/div)
Time (4ms/div)
FIGURE 2-51:
Thermal Shutdown.
FIGURE 2-54:
Waveforms (I
MIC45116-1 Switching
= 0A).
OUT
DS20005571A-page 16
2016 Microchip Technology Inc.
MIC45116
VOUT
(AC-Coupled)
(50mV/div)
V
= 12V
VOUTIN= 1.8V
IOUT
(1A/div)
I
OUT = 0.5A to 3.5A
Time (100μs/div)
FIGURE 2-55:
Transient Response
(MIC45116-1).
VOUT
(AC-Coupled)
(50mV/div)
V
= 12V
VOUTIN= 1.8V
IOUT
(2A/div)
IOUT = 3A to 6A
Time (100μs/div)
FIGURE 2-56:
Transient Response
(MIC45116-2).
FIGURE 2-57:
Control Loop Frequency
Response.
2016 Microchip Technology Inc.
DS20005571A-page 17
MIC45116
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Pin Number
PIN FUNCTION TABLE
Pin Name
Description
1, 2, 52
4, 44
PVIN
PVDD
BST
SW
Power Input Voltage. Connection to the drain of the internal high-side power
MOSFET. Connect an input capacitor from PVIN to PGND
.
Supply input for the internal power MOSFET drivers. Connect PVDD pins together. Do
not leave floating.
5, 6
Connection to the internal bootstrap circuitry and high-side power MOSFET drive
circuitry. Connect the two BST pins together.
8-10, 48-51
The SW pin connects directly to the switch node. Due to the high-speed switching on
this pin, the SW pin should be routed away from sensitive nodes. The SW pin also
senses the current by monitoring the voltage across the low-side MOSFET during
OFF time.
12-21
VOUT
NC
Output Voltage. Connected to the internal inductor, the output capacitor should be
connected from this pin to PGND as close to the module as possible.
23-25, 27-30,
32-34, 40, 41
Not internally connected.
26, 31, 35, 42,
45
PGND
Power Ground. PGND is the return path for the step-down power module power stage.
The PGND pin connects to the source of internal low-side power MOSFET, the
negative terminals of input capacitors, and the negative terminals of output capacitors.
Signal Ground and Power Ground of MIC45116 are internally connected.
36
FB
Feedback. Input to the transconductance amplifier of the control loop. The FB pin is
referenced to 0.8V. A resistor divider connecting the feedback to the output is used to
set the desired output voltage. Connect the bottom resistor from FB to system ground.
External ripple injection (series R and C) can be connected between FB and SW.
37
38
PG
EN
Power Good. Open-Drain Output. If used, connect to an external pull-up resistor of at
least 10 kΩ between PG and the external bias voltage.
Enable. A logic signal to enable or disable the step-down regulator module operation.
The EN pin is TTL/CMOS compatible. Logic-high = enable, logic-low = disable or
shutdown. EN pin has an internal 1 MΩ (typical) pull-down resistor to GND. Do not
leave floating.
39
43
47
VIN
5VDD
ILIM
Input for the internal linear regulator. Allows for split supplies to be used when there is
an external bus voltage available. Connect to PVIN for single supply operation.
Bypass with a 0.1 µF capacitor from VIN to PGND
.
Internal +5V Linear Regulator Output. Powered by VIN, 5VDD is the internal supply
bus for the device. In the applications with VIN < +5.5V, 5VDD should be tied to VIN to
bypass the linear regulator.
Current Limit. Connect a resistor between ILIM and SW to program the current limit.
3, 7, 11, 22, 46 KEEPOUT Depopulated pin positions.
—
—
—
V
OUT ePad VOUT Exposed Pad. Internally connected to VOUT pins. Please see the PCB Layout
Guidelines section.
SW ePad SW Exposed Pad. Internally connected to SW pins. Please see the PCB Layout
Guidelines section.
PGND
ePAD
PGND Exposed Pads. Please see the PCB Layout Guidelines section for the
connection to the system Ground.
DS20005571A-page 18
2016 Microchip Technology Inc.
MIC45116
At the end of the ON-time period, the internal high-side
driver turns off the high-side MOSFET and the low-side
driver turns on the low-side MOSFET. The OFF-time
period length depends upon the feedback voltage in
most cases. When the feedback voltage decreases
and the output of the gm amplifier falls below 0.8V, the
ON-time period is triggered and the OFF-time period
ends. If the OFF-time period determined by the
feedback voltage is less than the minimum OFF-time
tOFF(MIN), which is about 250 ns, the MIC45116 control
logic will apply the tOFF(MIN) instead. tOFF(MIN) is
required to maintain enough energy in the internal
boost capacitor (CBST) to drive the high-side MOSFET.
4.0
FUNCTIONAL DESCRIPTION
The MIC45116 is an adaptive ON-time synchronous
buck regulator module built for high-input voltage to
low-output voltage conversion applications. The
MIC45116 is designed to operate over a wide input
voltage range, from 4.75V to 20V, and the output is
adjustable with an external resistor divider. An adaptive
ON-time control scheme is employed to obtain a
constant switching frequency in steady state and to
simplify the control compensation. Hiccup mode
over-current protection is implemented by sensing
low-side MOSFET’s RDS(ON). The device features
internal soft-start, enable, UVLO, and thermal
shutdown. The module has integrated switching FETs,
inductor, bootstrap diode, and bypass capacitors.
The maximum duty cycle is obtained from the 250 ns
tOFF(MIN)
:
EQUATION 4-2:
4.1
Theory of Operation
tS – tOFFMIN
250ns
Figure 4-1, in association with Equation 4-1, shows the
output voltage is sensed by the MIC45116 feedback pin
(FB) via the voltage divider RFB1 and RFB2 and
compared to a 0.8V reference voltage (VREF) at the
error comparator through a low-gain transconductance
(gm) amplifier. If the feedback voltage decreases, and
the amplifier output falls below 0.8V, then the error
comparator will trigger the control logic and generate
an ON-time period. The ON-time period length is
predetermined by the Fixed tON Estimator circuitry:
DMAX = ---------------------------------- = 1 – --------------
tS tS
Where:
tS
1/fSW
It is not recommended to use MIC45116 with an
OFF-time close to tOFF(MIN) during steady-state
operation.
The adaptive ON-time control scheme results in a
constant switching frequency in the MIC45116 during
steady state operation. The actual ON-time and
resulting switching frequency will vary with the different
rising and falling times of the MOSFETs. Also, the
minimum tON results in a lower switching frequency in
high VIN to VOUT applications. During load transients,
the switching frequency is changed due to the varying
OFF-time.
SW
INTERNAL
RIPPLE
INJECTION
COMPENSATION
RFB1
VINJ
gM EA
FB
COMP
To illustrate the control loop operation, we will analyze
both the steady-state and load transient scenarios. For
easy analysis, the gain of the gm amplifier is assumed
to be 1. With this assumption, the inverting input of the
error comparator is the same as the feedback voltage.
RFB2
VREF
0.8V
Figure 4-2 shows the MIC45116 control loop timing
during steady-state operation. During steady-state, the
gm amplifier senses the feedback voltage ripple, which
is proportional to the output voltage ripple plus injected
voltage ripple, to trigger the ON-time period. The
ON-time is predetermined by the tON estimator. The
termination of the OFF-time is controlled by the
feedback voltage. At the valley of the feedback voltage
ripple, which occurs when VFB falls below VREF, the
OFF period ends and the next ON-time period is
triggered through the control logic circuitry.
FIGURE 4-1:
FB Pin.
Output Voltage Sense via
EQUATION 4-1:
VOUT
tONESTIMATED = -----------------------
VIN fSW
Where:
VOUT
VIN
Output Voltage
Power Stage Input Voltage
Switching Frequency
fSW
2016 Microchip Technology Inc.
DS20005571A-page 19
MIC45116
Unlike true current-mode control, the MIC45116 uses
the output voltage ripple to trigger an ON-time period.
The output voltage ripple is proportional to the inductor
current ripple if the ESR of the output capacitor is large
enough.
IL
IOUT
¨IL(PP)
VOUT
In order to meet the stability requirements, the
MIC45116 feedback voltage ripple should be in phase
with the inductor current ripple and is large enough to
be sensed by the gm amplifier and the error
comparator. The recommended feedback voltage
ripple is 20 mV~100 mV over full input voltage range. If
a low ESR output capacitor is selected, then the
feedback voltage ripple may be too small to be sensed
by the gm amplifier and the error comparator. Also, the
output voltage ripple and the feedback voltage ripple
are not necessarily in phase with the inductor current
ripple if the ESR of the output capacitor is very low. In
these cases, ripple injection is required to ensure
proper operation. Please refer to the Ripple Injection
subsection in the Application Information section for
more details about the ripple injection technique.
¨VOUT(PP) = ESR îꢀ¨IL(PP)
COUT
VFB
RFB2
VREF
¨VFB(PP) = ¨VOUT(PP)
×
RFB4 + RFB2
DH
TRIGGER ON-TIME IF VFB IS BELOW VREF
ESTIMATED ON TIME
FIGURE 4-2:
Timing.
MIC45116 Control Loop
Figure 4-3 shows the operation of the MIC45116 during
a load transient. The output voltage drops due to the
sudden load increase, which causes the VFB to be less
than VREF. This will cause the error comparator to
trigger an ON-time period. At the end of the ON-time
period, a minimum OFF-time tOFF(MIN) is generated to
charge the bootstrap capacitor (CBST) since the
feedback voltage is still below VREF. Then, the next
ON-time period is triggered due to the low feedback
voltage. Therefore, the switching frequency changes
during the load transient, but returns to the nominal
fixed frequency once the output has stabilized at the
new load current level. With the varying duty cycle and
switching frequency, the output recovery time is fast
and the output voltage deviation is small. Note that the
instantaneous switching frequency during load
transient remains bounded and cannot increase
4.2
Discontinuous Mode (MIC45116-1
Only)
In continuous mode, the inductor current is always
greater than zero; however, at light loads, the
MIC45116-1 is able to force the inductor current to
operate in discontinuous mode. Discontinuous mode is
where the inductor current falls to zero, as indicated by
trace (IL) shown in Figure 4-4. During this period, the
efficiency is optimized by shutting down all the
non-essential circuits and minimizing the supply
current as the switching frequency is reduced. The
MIC45116-1 wakes up and turns on the high-side
MOSFET when the feedback voltage VFB drops below
0.8V.
arbitrarily. The minimum period is limited by tON
+
tOFF(MIN). Because the variation in VOUT is relatively
limited during load transient, tON stays virtually close to
its steady-state value.
The MIC45116-1 has a zero crossing comparator (ZC)
that monitors the inductor current by sensing the
voltage drop across the low-side MOSFET during its
ON-time. If the VFB > 0.8V and the inductor current
goes slightly negative, then the MIC45116-1
automatically powers down most of the IC circuitry and
goes into a low-power mode.
Once the MIC45116-1 goes into discontinuous mode,
both low driver (DL) and high driver (DH) are low, which
turns off the high-side and low-side MOSFETs. The
load current is supplied by the output capacitors and
VOUT drops. If the drop of VOUT causes VFB to go below
VREF, then all the circuits will wake up into normal
continuous mode. First, the bias currents of most
circuits reduced during the discontinuous mode are
restored, and then a tON pulse is triggered before the
drivers are turned on to avoid any possible glitches.
Finally, the high-side driver is turned on. Figure 4-4
shows the control loop timing in discontinuous mode.
FIGURE 4-3:
Response.
MIC45116 Load Transient
DS20005571A-page 20
2016 Microchip Technology Inc.
MIC45116
compared with the power ground (PGND) after a
blanking time of 150 ns. In this way the drop voltage
over the resistor R26 (VCL) is compared with the drop
over the bottom FET generating the short current limit.
The small capacitor (C16) connected from the ILIM pin
to PGND filters the switching node ringing during the
off-time allowing a better short-limit measurement. The
time constant created by R26 and C16 should be much
less than the minimum off time.
IL CROSSES 0 AND VFB > 0.8
DISCONTINUOUS MODE STARTS
V
< 0.8. WAKE UP FROM
DFISB CONTINUOUS MODE
IL
0
VFB
VREF
MIC45116
ZC
DH
VIN
PVIN
SW
C5
R26
C16
ILIM
ESTIMATED ON-TIME
DL
PGND
FIGURE 4-5:
MIC45116 Current-Limiting
Circuit.
FIGURE 4-4:
MIC45116-1 Control Loop
(Discontinuous Mode).
The VCL drop allows short-limit programming based on
the value of the resistor (R26). If the absolute value of
the voltage drop on the bottom FET becomes greater
than VCL, and the VILIM falls below PGND, an
overcurrent is triggered causing the IC to enter hiccup
mode. The hiccup sequence including the soft-start
reduces the stress on the switching FETs and protects
the load and supply for severe short conditions.
During discontinuous mode, the bias current of most
circuits is substantially reduced. As a result, the total
power supply current during discontinuous mode is
only about 350 µA, allowing the MIC45116-1 to achieve
high efficiency in light load applications.
4.3
Soft-Start
The short-circuit current limit can be programmed by
using Equation 4-3.
Soft-start reduces the input power supply surge current
at startup by controlling the output voltage rise time.
The input surge appears while the output capacitor is
charged up.
EQUATION 4-3:
The MIC45116 implements an internal digital soft-start
by making the 0.8V reference voltage VREF ramp from
0 to 100% in about 3 ms with 9.7 mV steps. Therefore,
the output voltage is controlled to increase slowly by a
stair-case VFB ramp. Once the soft-start cycle ends, the
related circuitry is disabled to reduce current
consumption. PVDD must be powered up at the same
time or after VIN to make the soft-start function
correctly.
ICLIM + ILPP 0.5 – 0.1 RDSON + VCL
R26 = ------------------------------------------------------------------------------------------------------------------
ICL
Where:
ICLIM
Desired current limit.
RDS(ON)
On-resistance of low-side power
MOSFET, 16 mꢀ typically.
VCL
ICL
Current-limit threshold (typical
absolute value is 14 mV).
4.4
Current Limit
Current-limit source current (typical
value is 80 µA).
The MIC45116 uses the RDS(ON) of the low-side
MOSFET and external resistor connected from the ILIM
pin to SW node to set the current limit.
∆IL(PP)
Inductor current peak-to-peak,
since the inductor is integrated, use
Equation 4-4 to calculate the
inductor ripple current.
In each switching cycle of the MIC45116, the inductor
current is sensed by monitoring the low-side MOSFET
in the OFF period. The sensed voltage VLIM is
2016 Microchip Technology Inc.
DS20005571A-page 21
MIC45116
The peak-to-peak inductor current ripple is:
EQUATION 4-4:
VOUT VINMAX – VOUT
ILPP = -------------------------------------------------------------------
V
INMAX fSW L
The MIC45116 has a 1.0 µH inductor integrated into
the module. In case of a hard short, the short limit is
folded down to allow an indefinite hard short on the
output without any destructive effect. It is mandatory to
make sure that the inductor current used to charge the
output capacitance during soft-start is under the folded
short limit; otherwise the supply will go in hiccup mode
and may not finish the soft-start successfully.
With R26 = 1.62 kꢀ and C16 = 15 pF, the typical output
current limit is 8A.
DS20005571A-page 22
2016 Microchip Technology Inc.
MIC45116
The output capacitor RMS current is calculated in
Equation 5-3:
5.0
5.1
APPLICATION INFORMATION
Output Capacitor Selection
EQUATION 5-3:
The type of the output capacitor is usually determined
by the application and its equivalent series resistance
(ESR). Voltage and RMS current capability are two
other important factors for selecting the output
capacitor. Recommended capacitor types are MLCC,
OS-CON and POSCAP. The output capacitor’s ESR is
usually the main cause of the output ripple. The
MIC45116 requires ripple injection and the output
capacitor ESR affects the control loop from a stability
point of view.
ILPP
ICOUTRMS = ------------------
12
The power dissipated in the output capacitor is:
EQUATION 5-4:
PDISSCOUT = ICOUTRMS2 ESRCOUT
Equation 5-1 shows how the maximum value of ESR is
calculated.
EQUATION 5-1:
5.2
Input Capacitor Selection
VOUTPP
ILPP
---------------------------
ESRCOUT
The input capacitor for the power stage input PVIN
should be selected for ripple current rating and voltage
rating.
Where:
∆VOUT(PP) Peak-to-peak output voltage ripple
The input capacitor must be rated for the input current
ripple. The RMS value of input capacitor current is
determined at the maximum output current. Assuming
the peak-to-peak inductor current ripple is low:
∆IL(PP)
Peak-to-peak inductor current
ripple
The total output ripple is a combination of the ESR and
output capacitance. The total ripple is calculated in
Equation 5-2:
EQUATION 5-5:
I
CINRMS IOUTMAX D 1 – D
EQUATION 5-2:
VOUTPP
=
The power dissipated in the input capacitor is:
2
ILPP
+ ILPP ESRCOUT2
-------------------------------------
COUT fSW 8
EQUATION 5-6:
PDISSCIN = ICINRMS2 ESRCIN
Where:
D
Duty cycle
COUT
fSW
Output capacitance value
Switching frequency
The general rule is to pick the capacitor with a ripple
current rating equal to or greater than the calculated
worst-case RMS capacitor current.
As described in the Theory of Operation subsection in
the Functional Description, the MIC45116 requires at
least 20 mV peak-to-peak ripple at the FB pin to make
the gm amplifier and the error comparator behave
properly. Also, the output voltage ripple should be in
phase with the inductor current. Therefore, the output
voltage ripple caused by the output capacitors value
should be much smaller than the ripple caused by the
output capacitor ESR. If low-ESR capacitors, such as
ceramic capacitors, are selected as the output
capacitors, a ripple injection method should be applied
to provide enough feedback voltage ripple. Please refer
to Ripple Injection subsection for more details.
Equation 5-7 should be used to calculate the input
capacitor. Also it is recommended to keep some margin
on the calculated value:
EQUATION 5-7:
I
OUTMAX 1 – D
--------------------------------------------------
CIN
fSW dV
Where:
dV
fSW
Input ripple
Switching frequency
2016 Microchip Technology Inc.
DS20005571A-page 23
MIC45116
5.3
Output Voltage Setting
Components
TABLE 5-1:
RFB2
V
PROGRAMMING
OUT
RESISTOR LOOK-UP
The MIC45116 requires two resistors to set the output
voltage as shown in Figure 5-1.
VOUT
OPEN
40.2 kꢀ
20 kꢀ
0.8V
1.0V
1.2V
1.5V
1.8V
2.5V
3.3V
5.0V
11.5 kꢀ
8.06 kꢀ
4.75 kꢀ
3.24 kꢀ
1.91 kꢀ
RFB1
gM AMP
FB
RFB2
5.4
Ripple Injection
The VFB ripple required for proper operation of the
MIC45116 gm amplifier and error comparator is 20 mV
to 100 mV. However, the output voltage ripple is
generally too small to provide enough ripple amplitude
at the FB pin and this issue is more visible in lower
output voltage applications. If the feedback voltage
ripple is so small that the gm amplifier and error
comparator cannot sense it, then the MIC45116 will
lose control and the output voltage is not regulated. In
order to have some amount of VFB ripple, a ripple
injection method is applied for low output voltage ripple
applications.
VREF
FIGURE 5-1:
Configuration.
Voltage Divider
The output voltage is determined by Equation 5-8:
EQUATION 5-8:
The applications are divided into three situations
according to the amount of the feedback voltage ripple:
RFB1
VOUT = VFB 1 + ------------
RFB2
• Enough ripple at the feedback voltage due to the
large ESR of the output capacitors (Figure 5-2).
The converter is stable without any ripple
injection.
Where:
VFB
0.8V
A typical value of RFB1 used on the standard evaluation
board is 10 kꢀ. If RFB1 is too large, it may allow noise
to be introduced into the voltage feedback loop. If RFB1
is too small in value, it will decrease the efficiency of the
power supply, especially at light loads. Once RFB1 is
selected, RFB2 can be calculated using Equation 5-9:
VOUT
RFB1
MIC45116
COUT
FB
ESR
RFB2
EQUATION 5-9:
PGND
VFB RFB1
RFB2 = -----------------------------
V
OUT – VFB
FIGURE 5-2:
Enough Ripple at FB.
The feedback voltage ripple is:
For fixed RFB1 = 10 kꢀ, output voltage can be selected
by RFB2. Table 5-1 provides RFB2 values for some
common output voltages.
EQUATION 5-10:
RFB2
-------------------------------
VFBPP
Where:
=
ESR
ILPP
COUT
RFB1 + RFB2
∆IL(PP) Peak-to-Peak Value of the Inductor
Current Ripple
DS20005571A-page 24
2016 Microchip Technology Inc.
MIC45116
• Inadequate ripple at the feedback voltage due to
the small ESR of the output capacitors.
The injected ripple is calculated via:
EQUATION 5-12:
VFBPP = VIN Kdiv D 1 – D
Where:
The output voltage ripple is fed into the FB pin
through a feed-forward capacitor, CFF in this
situation, as shown in Figure 5-3. The typical CFF
value is between 1 nF and 100 nF.
1
----------------
fSW
EQUATION 5-11:
VIN
D
Power stage input voltage
Duty cycle
VFBPP = ESRCOUT ILPP
fSW
τ
Switching frequency
(RFB1//RFB2//RINJ) x CFF
With the feed-forward capacitor, the feedback
voltage ripple is very close to the output voltage
ripple.
EQUATION 5-13:
RFB1//RFB2
Kdiv = ----------------------------------------------
RINJ + RFB1//RFB2
VOUT
CFF
COUT
RFB1
MIC45116
Where:
RINJ
20 kꢀ
FB
ESR
RFB2
In Equation 5-13 and Equation 5-14, it is assumed that
the time constant associated with CFF must be much
greater than the switching period:
PGND
FIGURE 5-3:
Inadequate Ripple at FB.
EQUATION 5-14:
• Virtually no ripple at the FB pin voltage due to the
very low ESR of the output capacitors, such is the
case with ceramic output capacitors.
1
T
---------------- = -- « 1
fSW
In this situation, the VFB ripple waveform needs to be
generated by injecting suitable signal. A series RC
network between the SW pin and FB pin, RINJ and
CINJ as shown in Figure 5-4 injects a square-wave
current waveform into the FB pin, which, by means of
integration across the capacitor (CFF), generates an
appropriate sawtooth FB ripple waveform.
If the voltage divider resistors RFB1 and RFB2 are in the
kꢀ range, a CFF of 1 nF to 100 nF can easily satisfy the
large time constant requirements.
5.5
Thermal Measurements and Safe
Operating Area (SOA)
Measuring the IC’s case temperature is recommended
to ensure it is within its operating limits. Although this
might seem like a very elementary task, it is easy to get
erroneous results. The most common mistake is to use
the standard thermal couple that comes with a thermal
meter. This thermal couple wire gauge is large, typically
22 gauge, and behaves like a heatsink, resulting in a
lower case measurement.
VOUT
CFF
COUT
RFB1
MIC45116
FB
ESR
SW
RFB2
CINJ RINJ
PGND
Two methods of temperature measurement are using a
smaller thermal couple wire or an infrared
thermometer. If a thermal couple wire is used, it must
be constructed of 36-gauge wire or higher (smaller wire
size) to minimize the wire heat-sinking effect. In
addition, the thermal couple tip must be covered in
either thermal grease or thermal glue to make sure that
the thermal couple junction is making good contact with
the case of the IC. Omega brand thermal couple
(5SC-TT-K-36-36) is adequate for most applications.
FIGURE 5-4:
Circuit at FB.
External Ripple Injection
2016 Microchip Technology Inc.
DS20005571A-page 25
MIC45116
Wherever possible, an infrared thermometer is
recommended. The measurement spot size of most
infrared thermometers is too large for an accurate
reading on a small form factor ICs. However, an IR
thermometer from Optris has a 1 mm spot size, which
makes it a good choice for measuring the hottest point
on the case. An optional stand makes it easy to hold the
beam on the IC for long periods of time.
The safe operating area (SOA) of the MIC45116 is
shown in Figure 10 and Figure 11. These thermal
measurements were taken on MIC45116 evaluation
board with no air flow. Since the MIC45116 is an entire
system comprised of switching regulator controller,
MOSFETs, and inductor, the part needs to be
considered as a system. The SOA curves will give
guidance to reasonable use of the MIC45116.
SOA curves should only be used as a point of
reference. SOA data was acquired using the MIC45116
evaluation board. Thermal performance depends on
the PCB layout, board size, copper thickness, number
of thermal vias, and actual airflow.
7
6
5
4
1.0V OUTPUT
3
2
3.3V OUTPUT
5.0V OUTPUT
1
75 80 85 90
95 100 105 110 115 120 125
AMBIENT TEMPERATURE (°C)
FIGURE 5-5:
MIC45116 Power Derating
vs. Output Voltage with 12V Input with No
Airflow.
7
6
5
4
5V OUTPUT
3
12V OUTPUT
2
1
75 80 85 90
95 100 105 110 115 120 125
AMBIENT TEMPERATURE (°C)
FIGURE 5-6:
MIC45116 Power Derating
vs. Input Voltage with 1.0V Output with No
Airflow.
DS20005571A-page 26
2016 Microchip Technology Inc.
MIC45116
6.5
Output Capacitor
6.0
PCB LAYOUT GUIDELINES
• Use a wide trace to connect the output capacitor
ground terminal to the input capacitor ground
terminal.
PCB layout is critical to achieve reliable, stable and
efficient performance. A ground plane is required to
control EMI and minimize the inductance in power,
signal and return paths. The following guidelines
should be followed to ensure proper operation of the
MIC45116 module.
• Phase margin will change as the output capacitor
value and ESR changes.
• The feedback trace should be separate from the
power trace and connected as close as possible
to the output capacitor. Sensing a long
high-current load trace can degrade the DC load
regulation.
6.1
Module
• Place the module close to the point-of-load.
• Use wide polygons to route the input and output
power lines.
Figure 6-1 is optimized from a small form factor point of
view shows top and bottom layer of a four layer PCB. It
is recommended to use mid layer 1 as a continuous
ground plane.
• Follow the instructions in Package Information
and Recommended Landing Pattern to connect
the Ground exposed pads to system ground
planes.
6.2
Input Capacitor
• Place the input capacitors on the same side of the
board and as close to the module as possible.
• Place several vias to the ground plane close to
the input capacitor ground terminal.
• Use either X7R or X5R dielectric input capacitors.
Do not use Y5V or Z5U type capacitors.
• Do not replace the ceramic input capacitor with
any other type of capacitor. Any type of capacitor
can be placed in parallel with the ceramic input
capacitor.
• If a non-ceramic input capacitor is placed in
parallel with the input capacitor, it must be
recommended for switching regulator applications
and the operating voltage.
• In “Hot-Plug” applications, an electrolytic bypass
capacitor must be used to limit the over-voltage
spike seen on the input supply with power is
suddenly applied. If hot-plugging is the normal
operation of the system, using an appropriate
hot-swap IC is recommended.
6.3
RC Snubber (Optional)
FIGURE 6-1:
Top and Bottom of a
• Depending on the operating conditions, a RC
snubber can be used. Place the RC and as close
to the SW pin as possible if needed. Placement of
the snubber on the same side as module is
preferred.
Four-Layer Board.
6.4
SW Node
• Do not route any digital lines underneath or close
to the SW node.
• Keep the switch node (SW) away from the
feedback (FB) pin.
2016 Microchip Technology Inc.
DS20005571A-page 27
MIC45116
After completion of the periphery pad design, the larger
exposed pads will be designed to create the mounting
surface of the QFN exposed heatsink. The primary
transfer of heat out of the QFN will be directly through
the bottom surface of the exposed heatsink. To aid in
the transfer of generated heat into the PCB, the use of
an array of plated through-hole vias beneath the
mounted part is recommended. The typical via hole
diameter is 0.30 mm to 0.35 mm, with center-to-center
pitch of 0.80 mm to 1.20 mm.
7.0
SIMPLIFIED PCB DESIGN
RECOMMENDATIONS
7.1
Periphery I/O Pad Layout and
Large Pad for Exposed Heatsink
The board design should begin with copper/metal pads
that sit beneath the periphery leads of a mounted QFN.
The board pads should extend outside the QFN
package edge a distance of approximately 0.20 mm
per side:
EQUATION 7-1:
TotalPadLength = 8mm + 0.20mm 2sides = 8.4mm
FIGURE 7-1:
Package Bottom View vs. PCB Recommended Exposed Metal Trace.
Please note the exposed metal trace is a “mirror image” of the package bottom view.
DS20005571A-page 28
2016 Microchip Technology Inc.
MIC45116
7.2
Solder Paste Stencil Design
(Recommended Stencil Thickness
= 112.5 ±12.5 µm)
The solder stencil aperture openings should be smaller
than the periphery or large PCB exposed pads to
reduce any chance of build-up of excess solder at the
large exposed pad area which can result to solder
bridging.
The suggested reduction of the stencil aperture
opening is typically 0.20 mm smaller than exposed
metal trace.
Please note that a critical requirement is to not
duplicate land pattern of the exposed metal trace as
solder stencil opening because the design and
dimension values are different.
Cyan-colored shaded pad areas indicate exposed
trace keep-out area in Figure 7-2 and Figure 7-3.
FIGURE 7-3:
Stack-Up of Pad Layout and
Solder Paste Stencil.
FIGURE 7-2:
Solder Stencil Opening.
2016 Microchip Technology Inc.
DS20005571A-page 29
MIC45116
8.0
8.1
PACKAGING INFORMATION
Package Marking Information
52-Pin QFN*
Example
XXX
XXXXX-X
WNNN
MIC
45116-1
6420
Legend: XX...X Product code or customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e
3
*
)
e
3
●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) symbol may not be to scale.
DS20005571A-page 30
2016 Microchip Technology Inc.
MIC45116
52-Lead H3QFN 8 mm x 8 mm Package Outline and Recommended Land Pattern
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2016 Microchip Technology Inc.
DS20005571A-page 31
MIC45116
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005571A-page 32
2016 Microchip Technology Inc.
MIC45116
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2016 Microchip Technology Inc.
DS20005571A-page 33
MIC45116
Thermally Enhanced Land Pattern
DS20005571A-page 34
2016 Microchip Technology Inc.
MIC45116
2016 Microchip Technology Inc.
DS20005571A-page 35
MIC45116
NOTES:
DS20005571A-page 36
2016 Microchip Technology Inc.
MIC45116
APPENDIX A: REVISION HISTORY
Revision A (August 2016)
• Converted Micrel document MIC45116 to Micro-
chip data sheet DS20005571A.
• Minor text changes throughout.
2016 Microchip Technology Inc.
DS20005571A-page 37
MIC45116
NOTES:
DS20005571A-page 38
2016 Microchip Technology Inc.
MIC45116
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
–
PART NO.
Device
–
X
X
XX
XX
a)
MIC45116-1YMP-TR: 20V/6A DC/DC Power
Module, HyperLight Load,
–40°C to +125°C Temp.
Features
Temperature Package Media Type
Range, 52-Pin QFN,
1,500/Reel
Device:
MIC45116:
20V/6A DC/DC Power Module
b)
MIC45116-2YMP-TR: 20V/6A DC/DC Power
Module, Hyper Speed
Features:
1
2
=
=
HyperLight Load
Hyper Speed Control
Control, –40°C to +125°C
Temp. Range, 52-Pin QFN
1,500/Reel
Temperature:
Package:
Y
=
–40°C to +125°C
MP
TR
=
=
52-Pin 8 mm x 8 mm x 3 mm QFN
1,500/Reel
Media Type:
2016 Microchip Technology Inc.
DS20005571A-page 39
MIC45116
NOTES:
DS20005571A-page 40
2016 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate,
dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,
KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,
RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company,
ETHERSYNCH, Hyper Speed Control, HyperLight Load,
IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
QUALITYꢀMANAGEMENTꢀꢀSYSTEMꢀ
CERTIFIEDꢀBYꢀDNVꢀ
© 2016, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0842-0
== ISO/TSꢀ16949ꢀ==ꢀ
2016 Microchip Technology Inc.
DS20005571A-page 41
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Asia Pacific Office
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Web Address:
www.microchip.com
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Germany - Dusseldorf
Tel: 49-2129-3766400
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Germany - Karlsruhe
Tel: 49-721-625370
India - Pune
Tel: 91-20-3019-1500
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Austin, TX
Tel: 512-257-3370
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Boston
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
China - Dongguan
Tel: 86-769-8702-9880
Italy - Venice
Tel: 39-049-7625286
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Guangzhou
Tel: 86-20-8755-8029
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
Korea - Seoul
Cleveland
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Poland - Warsaw
Tel: 48-22-3325737
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Sweden - Stockholm
Tel: 46-8-5090-4654
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Detroit
Novi, MI
Tel: 248-848-4000
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Houston, TX
Tel: 281-894-5983
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Los Angeles
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Taiwan - Kaohsiung
Tel: 886-7-213-7828
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
06/23/16
DS20005571A-page 42
2016 Microchip Technology Inc.
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