RE46C800 [MICROCHIP]
Carbon Monoxide Detector Companion IC; 一氧化碳检测仪配套IC
| 型号： | RE46C800 |
| 厂家： | 
MICROCHIP |
| 描述： | Carbon Monoxide Detector Companion IC |
| 文件： | 总24页 (文件大小：562K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RE46C800
Carbon Monoxide Detector Companion IC
Features:
Description:
• Low Quiescent Current
• Operation from 2V or 12V
• 9.8V Boost Regulator
• Horn Driver
The RE46C800 is a low-power CMOS carbon monoxide
detector companion IC. The RE46C800 provides all of
the analog, interface, and power management functions
for a microcontroller-based CO or toxic gas detector. It
is intended for use in both 3V and 9V battery or battery-
backed applications. It features a boost regulator and
horn driver circuit suitable for driving a piezoelectric
horn, a 3.3V regulator for microcontroller voltage
regulation, an LED driver, an operational amplifier and
an IO for communication with interconnected units.
• LED Driver
• 3.3V Regulated Voltage for Microcontroller
Operation
• Internal Operational Amplifiers:
- ±1 mV Input Offset Voltage
- Rail-to-rail Input and Output
- 10 kHz Gain Bandwidth Product
- Unity Gain Stable
Package Types
RE46C800
SSOP
• Bidirectional Alarm Interconnect
INP
1
20
HRNEN
HB
Applications:
19
18
2
3
INN
• CO Detector
VREF
HS
• Toxic Gas Detector
• Heat Detector
4
5
17
16
OPOUT
9VDET
VDD
FEED
VSS
6
7
15
14
LX
ACDET
LEDPWR
VBST
LEDEN
8
13
12
IO1
IO2
9
VREG
10
11
IODIR
2013 Microchip Technology Inc.
DS25172A-page 1
RE46C800
Functional Block Diagram
VDDS
LX (15)
HRNEN (20)
BOOST
9VDET (5)
PWM
CONTROL
VBST
DISABLE
HB (19)
LEVEL
I_LIMIT
SHIFTER
ACDET (7)
HS (18)
VREG
VDD (6)
SUPPLY
SELECT
FEED (17)
VBST (13)
VDDS
ERROR
AMPLIFIER
VDDS
REFERENCE
VOLTAGE
VREG (12)
VREF
GENERATOR
VREG
VREF (3)
OV
Protection
INP (1)
INN (2)
OPOUT (4)
LEDEN (8)
VBST
LEDPWR (14)
IO1 (9)
IODIR (11)
IO2 (10)
INTERCONNECT
VSS (16)
DS25172A-page 2
2013 Microchip Technology Inc.
RE46C800
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VDD............................................................................................................................................................... -0.3V to 5.5V
ESD HBM................................................................................................................................................................1500V
ESD MM....................................................................................................................................................................150V
VBST, LX ........................................................................................................................................................ -0.3V to 13V
Input Voltage Range Except ACDET, 9VDET, FEED, IO1 ..................................................... VIN1 = – .3V to VREG + .3V
ACDET, 9VDET Input Voltage Range .....................................................................................VIN2 = – .3V to VBST + .3V
FEED Input Voltage Range ...........................................................................................................VINFD = -10V to + 22V
IO1 Input Voltage Range....................................................................................................................VINIO1 = -.3 to +15V
Input Current except FEED............................................................................................................................. IIN = 10 mA
Operating Temperature.....................................................................................................................TA = -10C to +60C
Storage Temperature ..................................................................................................................TSTG = -55C to +125C
Maximum Junction Temperature....................................................................................................................TJ = +15C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC ELECTRICAL CHARACTERISTICS – RE46C800
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Test
Pin
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Operating
Supply Voltage
VDD
6
2
6
—
—
5
V
V
VBST
13
12
Operating, 9V operation,
9VDET or ACDET high
Standby Supply Current IDDSTBY1
IDDSTBY2
—
—
13.6
5.8
—
µA Inputs low; No loads, boost
regulator running (Note 4)
9.3
µA Inputs low; No loads, boost
regulator disabled, 9V opera-
tion, VBST = 9V, 9VDET high
Quiescent Supply
Current
IDDQ
IVOQ
6
—
—
6.8
3.6
10.3
5.2
µA Inputs low; No loads;
VBST = 5V; VLX = 0.5V
Quiescent IVO
13
µA Inputs low; No loads;
VBST = 5V; VLX = 0.5V
Note 1: Wherever a specific V
value is listed under test conditions, the V
is forced externally with the inductor
BST
BST
disconnected and the boost regulator is NOT running.
2: Typical values are for design information only.
3: The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
4: The Standby Supply Current I
specified above can be approximated as follows:
DDSTBY1
I
= I
+ I
DDQ IND
DDSTBY1
Where
I
= average current into V supply
DDQ DD
I
= average inductor current = V
* IVOQ/(V * Efficiency)
BST IN
IND
V
= V = 3V
DD
IN
2013 Microchip Technology Inc.
DS25172A-page 3
RE46C800
DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED)
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Test
Pin
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Input Leakage Low
Input Leakage High
IIL
1, 5, 7,
8, 10,
11, 20
—
—
-100
nA INP, 9VDET, ACDET, LEDEN,
IO2, IODIR, HRNEN Inputs
VIN = VSS
IILOP
IILF
2
—
—
—
—
-15
—
-200
-50
pA INN input, VIN = VSS
17
µA FEED = -10V, VBST = 10V
IIH1
1, 8,
10, 11,
20
100
nA INP, LEDEN, IO2, IODIR,
HRNEN Inputs VIN = VREG
IIH2
5, 7
—
—
100
nA 9VDET, ACDET Inputs,
VIN = VBST, VBST = 10V.
IIHOP
IIHF
2
—
—
—
—
20
—
200
50
1
pA INN input, VIN = VREG
17
µA FEED = +22V; VBST = 10V
Output Off Leakage
High
IIHOZ
14, 15
µA LEDEN = VSS, LEDPWR,
LX = VBST = 10V
Input Voltage Low
Input Voltage High
Output Voltage Low
VIL1
8, 10,
11, 20
—
—
1
V
LEDEN, IO2, IODIR, HRNEN
Inputs
VIL2
VIL3
VILF
7
5
—
—
—
—
—
—
—
—
7
4
V
V
V
V
ACDET Input, VBST = 10V
9VDET Input, VBST = 10V
FEED Input; VBST = 10V
17
9
3
VILIO
1
0.8
Falling edge of IO1 input,
IODIR = VSS
VIH1
8, 10, VREG -.7
11, 20
—
—
V
LEDEN, IO2, IODIR, HRNEN
Inputs
VIH2
VIH3
VIHF
7
5
8.2
6
—
—
—
—
—
—
—
—
V
V
V
V
ACDET Input, VBST = 10V
9VDET Input, VBST = 10V
FEED Input; VBST = 10V
17
9
7
VIHIO
1
2
Rising edge of IO1 input,
IODIR = VSS
VOL1
18, 19
—
—
0.5
V
HS or HB; IOUT = 16 mA;
VDD = 3V; VBST = 10V,
HRNEN = VSS
VOL2
14
10
—
—
—
—
0.5
0.5
V
V
LEDPWR; IOUT = 10 mA;
VBST = 10V
VOLIO2
IO2 output, IOUT = 100 µA,
IODIR = VSS
Note 1: Wherever a specific V
value is listed under test conditions, the V
is forced externally with the inductor
BST
BST
disconnected and the boost regulator is NOT running.
2: Typical values are for design information only.
3: The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
4: The Standby Supply Current I
specified above can be approximated as follows:
DDSTBY1
I
= I
+ I
DDQ IND
DDSTBY1
Where
I
= average current into V supply
DDQ DD
I
= average inductor current = V
* IVOQ/(V * Efficiency)
BST IN
IND
V
= V = 3V
DD
IN
DS25172A-page 4
2013 Microchip Technology Inc.
RE46C800
DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED)
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Test
Pin
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Output Voltage High
VOH1
18, 19
9.5
—
—
V
HS or HB; IOUT = -16 mA;
VBST = 10V; HRNEN = VREG
VOHIO1
VOHIO2
9
3
—
—
—
—
V
V
IO1, IOUT = -4 mA,
IODIR = VIH1, IO2 = VIH1
10
VREG -.5
IO2, IOUT = -100 µA,
IODIR = VSS, IO1 = VIHIO1
Reference Voltage
VREF
VVO1
3
—
9
300
9.8
—
mV
V
VBST Output Voltage
13
10.6
VDD = 3V; HRNEN = VREG
IOUT = 10 mA
;
VVO2
VEFF1
VEFF2
13
3.6
—
4
4.4
—
V
%
%
V
VDD = 3V; HRNEN = VSS;
I
OUT=10 mA
VBST Efficiency
85
75
ILOAD=10 mA; VDD =3V;
HRNEN = VSS
—
—
ILOAD = 100 µA; VDD = 3V;
HRNEN = VSS
VREG Voltage
VREG
12
12
3.2
—
3.3
30
3.4
50
IOUT < 20 mA
VREG Load Regulation
VREGLD
mV IOUT = 0 to 20 mA;
HRNEN = VREG
Brown-out Threshold
VOBVT
13
13
3.2
3.6
4
V
Falling edge of VBST
VBST-to-Brown-out
Margin
VOBVTM
100
400
—
mV VVO2 - VOBVT
Brown-out Pull Down
IBT
12
12
20
40
4
—
mA VBST = 3.0V; VREG = 2.0V
V
VREG Over Voltage
Clamp
VCL
3.75
4.25
IO1 Output Current
IO1IH1
IO1IH2
9
9
9
9
9
25
—
-4
—
—
-5
60
150
—
µA IODIR = VSS, IO1 = 1V
µA IODIR = VSS, IO1 = 15V
IO1IOH1
IO1IOH2
IO1IOL1
mA IODIR, IO2 = VIH1, IO1 = 3V
mA IODIR, IO2 = VIH1, IO1 = VSS
mA IO Dump Current,
—
—
-5
-16
—
10
IODIR = VIH1, IO2 = VSS
,
IO1 = 1V
IO1 Hysteresis
Op Amp
VHYSTIO1
9
—
150
—
mV IODIR = VSS
Input Offset Voltage
VOS
4
-1
—
—
1
mV VCM = 0.3V
V
Common Mode Input
Range
VCMR
1, 2
VSS
VREG
Note 1: Wherever a specific V
value is listed under test conditions, the V
is forced externally with the inductor
BST
BST
disconnected and the boost regulator is NOT running.
2: Typical values are for design information only.
3: The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
4: The Standby Supply Current I
specified above can be approximated as follows:
DDSTBY1
I
= I
+ I
DDQ IND
DDSTBY1
Where
I
= average current into V supply
DDQ DD
I
= average inductor current = V
* IVOQ/(V * Efficiency)
BST IN
IND
V
= V = 3V
DD
IN
2013 Microchip Technology Inc.
DS25172A-page 5
RE46C800
DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED)
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Test
Pin
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Common Mode
Rejection Ratio
CMRR
1, 2, 4
—
80
—
dB VREG = 3.3V, VCM = -0.3V to
3.3V
DC Open-Loop Gain
(large signal)
AOL
VOL, VOH
ISC
4
4
4
—
VSS +10
—
115
—
—
dB RL = 50 kΩ, VOUT = 0.3V to
VREG - 0.3V
Maximum Output
Voltage Swing
VREG -10 mV RL = 50 kΩ, 0.5V input
overdrive
Output Short Circuit
Current
20
—
mA VREG = 3.3V
Note 1: Wherever a specific V
value is listed under test conditions, the V
is forced externally with the inductor
BST
BST
disconnected and the boost regulator is NOT running.
2: Typical values are for design information only.
3: The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
4: The Standby Supply Current I
specified above can be approximated as follows:
DDSTBY1
I
= I
+ I
DDQ IND
DDSTBY1
Where
I
= average current into V supply
DDQ DD
I
= average inductor current = V
* IVOQ/(V * Efficiency)
BST IN
IND
V
= V = 3V
DD
IN
DS25172A-page 6
2013 Microchip Technology Inc.
RE46C800
AC ELECTRICAL CHARACTERISTICS
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CVBST = 10 µF.
Parameter
Symbol Test Pin
Min.
Typ.
Max.
Units
Conditions
OP Amp AC Response
Gain Bandwidth
Product
GBWP
4
—
10
—
kHz
Slew Rate
SR
PM
4
4
—
—
3
—
—
V/ms
°
Phase margin
Op Amp Noise
65
G = +1V/V
Input Voltage
Noise
Eni
eni
ini
1, 2
1, 2
1, 2
—
—
—
5
—
—
—
µVP-P f = 0.1 Hz to 10 kHz
Input Voltage
Noise Density
170
0.6
nV/ f = 1 kHz
√Hz
Input Current
Noise Density
fA/ f = 1 kHz
√Hz
Note 1: Wherever a specific V
value is listed under test conditions, the V
is forced externally with the inductor
BST
BST
disconnected and the boost regulator is NOT running.
2: Typical values are for design information only.
3: The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = 3V, VSS= 0V
Parameter
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 20L-SSOP
TA
-10
-55
—
—
60
°C
°C
TSTG
125
JA
—
87.3
—
°C/W
2013 Microchip Technology Inc.
DS25172A-page 7
RE46C800
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
RE46C800
PIN FUNCTION TABLE
Symbol
Description
SSOP
1
2
3
4
5
6
7
8
INP
INN
Non-inverting input of the op amp.
Inverting input of the op amp.
VREF
Voltage reference for CO biasing and detection circuitry.
Output of the op amp.
OPOUT
9VDET
VDD
Logic input used to disable the boost regulator.
Low-voltage supply input.
ACDET
LEDEN
AC power detect pin.
Logic input used to enable the LED driver. Input is designed to interface with
circuitry supplied by VREG, so input voltage levels will scale with the VREG
voltage.
9
IO1
Logic bidirectional pin used for connection to remote units. This pin has an
internal pull-down device. If used as an output, high level is VVO1.
10
11
12
13
IO2
IODIR
VREG
VBST
Bidirectional pin used to send and receive IO1 interconnect signal status.
Logic input used to select IO direction.
Regulated output voltage. Nominal output is 3.3V.
Boost regulator output, typically output voltage is 4V or 9.8V. Also used as
the high-voltage supply input.
14
15
LEDPWR
LX
Open drain NMOS output used to drive a visible LED.
Open drain NMOS output used to drive the boost regulator inductor. The
inductor should be connected from this pin to the positive supply through a
low resistance path.
16
17
VSS
Connect to the negative supply voltage.
FEED
Usually connected to the feedback electrode of the piezoelectric horn
through a current limiting resistor. If not used, this pin must be connected to
VSS
.
18
HS
HS is a complementary output to HB and connects to the ceramic electrode
(S) of the piezoelectric transducer.
19
20
HB
This pin is connected to the metal electrode (B) of a piezoelectric transducer.
HRNEN
Logic input for horn enable designed to interface with circuitry supplied by
VREG. Input voltage levels will scale with the VREG voltage.
DS25172A-page 8
2013 Microchip Technology Inc.
RE46C800
Table 3-1 shows the truth table for the power
management system.
3.0
3.1
DEVICE DESCRIPTION
Introduction
TABLE 3-1:
POWER MANAGEMENT
SYSTEM
The RE46C800 provides the necessary analog
functions to build a microcontroller-based CO or toxic
gas detector. This includes an op amp and voltage
reference for the electrochemical sensor, a voltage
regulator for the microcontroller, an LED driver, a horn
driver, a detector interconnect function, a boost regula-
tor for 3V operation, a power management system that
allows operation from 3V, 9V or AC derived power. The
power management system provides the capability for
AC power with battery backup. The RE46C800
provides a simple means for the microcontroller to
control the operation of the CO detector and provide
the necessary signaling functions during an alarm
condition.
Internal
9VDET ACDET
Boost Regulator
Supply
0
0
1
1
0
1
0
1
VDD
Enabled
VREG Enabled
VREG Disabled
VREG Disabled
3.4
Boost Regulator
The boost regulator only operates in low-voltage
applications. The boost regulator is a fixed off time
boost regulator with peak current limiting. In low-boost
operation the peak current is nominally 0.6A. In high-
boost operation the peak current is nominally 1.2A. The
boost regulator normally operates in Low-Boost mode,
which provides a nominal 4V output voltage on the
VBST pin. In High-Boost mode, the boost regulator
provides a nominal 9.8V on the VBST pin. The boost
regulator can be placed in High-Boost mode with
HORNEN, LEDEN, or IODIR and IO2 both asserted
high.
3.2
CO Sensor Circuit
The RE46C800 provides a low offset op amp and
reference voltage, VREF for two terminal
,
a
electrochemical CO or toxic gas sensor. The unity gain
stable op amp provides rail-to-rail inputs and output.
The op amp output is monitored by the microcontroller
to determine the CO concentration. This uncommitted
op amp can be used for other purposes such as
temperature sensing.
The brown-out threshold voltage is the VBST voltage at
which the voltage regulator and the horn will be
disabled. When the VBST voltage falls below the brown-
out threshold voltage of 3.6V, VREG will be disabled and
pulled to VSS with a nominal 40 mA current. When the
boost voltage rises above the brown-out threshold
voltage, VREG is enabled.
3.3
Power Management System
The power management system allows the RE46C800
to be powered from a 3V or 9V battery or AC power. AC
power is supplied as a DC voltage derived from an AC
power supply. This DC voltage is diode connected to
the VBST pin of the RE46C800. AC supplied power and
a 9V battery can both be diode connected to the VBST
pin.
3.5
Voltage Regulator
The voltage regulator provides a nominal 3.3V output
at the VREG pin and is intended to power a microcon-
troller. In normal operation, the regulator will source
current up to 20 mA, but the current sinking capability
is typically under 1 µA. The voltage regulator is pow-
ered from the VBST pin. In low-voltage applications the
regulator is powered by the boost regulator and the
regulator load current is part of the boost regulator load
current. An overvoltage clamp is intended to limit the
voltage at VREG if it is pulled up by an external source
to greater than 4V. When the boost regulator experi-
ences a brown-out condition, the voltage regulator will
For low-voltage systems the battery is connected to the
VDD pin. When only a low-voltage battery is available,
the internal circuitry is powered from VDD. When a 9V
battery or AC power is available, the internal circuitry is
powered from VREG, which is a regulated 3.3V. The
selection of the power source for the internal circuitry is
controlled with the ACDET pin when the 9VDET pin is
low.
In low-voltage systems that are also AC powered, the
boost regulator will turn on if voltage of the AC supplied
power drops below the specified boost regulator
voltage. This can cause the low-voltage battery to
discharge more rapidly than expected.
be disabled and the VREG output will be pulled to VSS
.
The 9VDET pin will disable the boost regulator if
9VDET is high. For a low-voltage system, the 9VDET
pin should be connected to VSS which will enable the
boost regulator.
2013 Microchip Technology Inc.
DS25172A-page 9
RE46C800
3.6
LED Driver
3.7
Interconnect Operation
The LED drive circuit provides power to an LED, which
can be used as a visual indicator by the system. The
LED drive circuit can also be used as part of a battery
check function in battery-powered applications. When
LEDEN is asserted high the LED will load the VBST
output and the microcontroller can monitor the battery
operation under load. In low-voltage systems the boost
regulator will be placed into high-boost operation when
LEDEN is asserted high. The load current is set by the
resistor in series with the LED.
The IO circuitry provides the means for the CO detector
to be connected to other CO detectors or smoke
alarms. Table 3-2 below provides the truth table for the
interconnect circuit operation. IO1 is a bidirectional pin
that connects to other CO detectors or smoke alarms.
IO2 is a bidirectional pin that connects to the
microcontroller. IODIR connects to the microcontroller
and determines when IO1 and IO2 act as an input or
output. When IO1 is used as an output asserting a logic
high, the IO1 output acts as current source that is
biased from VBST. In low-voltage applications where
the boost regulator is enabled, the boost regulator will
operate in High-Boost mode. When IO1 is used as an
output asserting a logic low, the IO1 output acts as
current sink. IO2 logic levels are referenced to VREG
.
TABLE 3-2:
INTERCONNECT LOGIC
TRUTH TABLE
IO2
IO1
IODIR
Input
Output
Input
Output
1
1
0
0
0
1
—
—
0
—
—
0
0
1
—
—
—
—
1
1
DS25172A-page 10
2013 Microchip Technology Inc.
RE46C800
4.0
4.1
APPLICATION NOTES
Boost Regulator
The boost regulator in High-Boost mode (nominal
VBST = 9.8V) can draw current pulses of greater than
1A and is, therefore, very sensitive to series resistance.
Critical components of this resistance are: the inductor
DC resistance, the internal resistance of the battery
and the resistance in the connections from the inductor
to the battery, from the inductor to the LX pin, from the
inductor through the boost capacitor, and from the VSS
pin to the battery. In order to function properly under full
load at VDD = 2V, the total of the inductor and intercon-
nect resistances should not exceed 0.3Ω. The internal
battery resistance should be no more than 0.5Ω and a
low ESR capacitor of 10 µF or more should be
connected in parallel with the battery to average the
current draw over the boost regulator switching cycle.
The Schottky diode and inductor should be specified
with a maximum operating current of 1.5A or higher.
The boost capacitor should have a low ESR.
4.2
Typical Applications
A few typical applications using the RE46C800 are
listed below:
AC POWER
D1
Line
Line
10-12V
DC
Neutral
Neutral
ACDIS
RE46C800
Working
1.5 Mȍ
R5
INP
1
HRNEN
20
CO
1Mȍ
R1
22 μF
C1
Sensor
2
3
INN
VREF
HB 19
220Kȍ
R3
1 nF
C4
Counter
18
HS
4
17
OPOUT
9VDET
VDD
R6
FEED
5
16
15
14
13
12
11
470
VSS
LX
VBAT
3V
100
VBAT
6
L1
10 μH
1 Mȍ
R2
10 μF
7
LED
ACDET
LEDEN
IO1
LEDPWR
D2
R7
1 μF
C3
8
100 Kȍ
R8
C2
VBST
VREG
3.3V
9
10
IO1
IO2
10 μF
C5
IO1
10 μF
C6
Interface with
Interconnected Units
IO2
IODIR
IO2
If AC then VREG supplies chip VDD through an internal switch
If no AC then VDD is supplied through the external VDD pin
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-1:
Typical Application: AC with 3V Battery Backup.
2013 Microchip Technology Inc.
DS25172A-page 11
RE46C800
RE46C800
HRNEN
Working
CO
1.5 Mȍ
R5
INP
INN
1
2
20
1 Mȍ
22 μF
C1
Sensor
R1
HB 19
220Kȍ
R3
1 nF
C4
Counter
3
18
VREF
HS
4
17
OPOUT
9VDET
VDD
R6
FEED
5
16
15
14
13
12
11
470
VSS
LX
VBAT
100 Kȍ
VBAT
6
L1
10 μH
R2
7
LED
ACDET
LEDEN
IO1
LEDPWR
D2
10 μF
C2
1 μF
C3
3V
8
VBST
VREG
3.3V
9
10
IO1
IO2
10 μF
C5
10 μF
C6
Interface with
Interconnected Units
IO2
IODIR
IO2
IO1
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-2:
Typical Application: 3V Battery Operation.
AC POWER
D1
Line
Line
10-12V
DC
Neutral
Neutral
ACDIS
RE46C800
Working
1.5 Mȍ
R5
INP
1
HRNEN
20
CO
1 Mȍ
R1
22 μF
C1
Sensor
2
3
INN
VREF
HB 19
220Kȍ
R3
1 nF
C4
Counter
18
HS
4
17
OPOUT
9VDET
VDD
R6
FEED
VSS
5
16
15
14
13
12
11
VBAT
9V
470 Kȍ
D3
6
LX
1 Mȍ
7
LED
ACDET
LEDEN
IO1
LEDPWR
10 μF
C2
R7
8
100 Kȍ
R8
VBST
VREG
3.3V
9
10
IO1
IO2
10 μF
C5
IO1
10 μF
C6
Interface with
Interconnected Units
IO2
IODIR
IO2
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-3:
Typical Application: AC with 9V Battery Backup.
DS25172A-page 12
2013 Microchip Technology Inc.
RE46C800
RE46C800
HRNEN
Working
1.5 Mȍ
R5
INP
INN
1
2
20
CO
1 Mȍ
R1
22 μF
C1
Sensor
HB 19
220Kȍ
R3
1 nF
C4
Counter
3
18
VREF
HS
4
17
OPOUT
9VDET
VDD
R6
FEED
5
16
15
14
13
12
11
470
VSS
LX
VBAT
9V
6
7
LED
ACDET
LEDEN
IO1
LEDPWR
10 μF
C2
8
VBST
VREG
3.3V
9
10
IO1
IO2
10 μF
C5
IO1
10 μF
C6
Interface with
Interconnected Units
IO2
IODIR
IO2
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-4:
Typical Application: 9V Battery Operation.
AC POWER
D1
Line
Line
10-12V
DC
Neutral
Neutral
ACDIS
RE46C800
Working
1.5 Mȍ
R5
INP
1
HRNEN
20
CO
1 Mȍ
R1
22 μF
C1
Sensor
2
3
INN
HB 19
220Kȍ
R3
1 nF
C4
Counter
18
VREF
HS
4
17
OPOUT
9VDET
VDD
R6
FEED
5
16
15
14
13
12
11
VSS
LX
470 Kȍ
6
1 Mȍ
7
LED
ACDET
LEDEN
IO1
LEDPWR
R7
8
100 Kȍ
R8
VBST
VREG
3.3V
9
10
IO1
IO2
10 μF
10 μF
C6
Interface with
Interconnected Units
IO2
IODIR
C5
IO2
IO1
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-5:
Typical Application: AC only.
2013 Microchip Technology Inc.
DS25172A-page 13
RE46C800
NOTES:
DS25172A-page 14
2013 Microchip Technology Inc.
RE46C800
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
20-Lead SSOP (5.30 mm)
Example
RE46C800
e
3
V/SS
1308256
Legend: XX...X Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
*
)
e
3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2013 Microchip Technology Inc.
DS25172A-page 15
RE46C800
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DS25172A-page 16
2013 Microchip Technology Inc.
RE46C800
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2013 Microchip Technology Inc.
DS25172A-page 17
RE46C800
NOTES:
DS25172A-page 18
2013 Microchip Technology Inc.
RE46C800
APPENDIX A: REVISION HISTORY
Revision A (March 2013)
• Initial Release of this Document.
2013 Microchip Technology Inc.
DS25172A-page 19
RE46C800
NOTES:
DS25172A-page 20
2013 Microchip Technology Inc.
RE46C800
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
X
Examples:
X
a)
b)
RE46C800SS20F: 20LD SSOP package
RE46C800SS20TF: 20LD SSOP package
Tape and Reel
Package
Number
of Pins
Lead Free/
Tape and Reel
Device:
RE46C800
CMOS Carbon Monoxide Detector IC
RE46C800T CMOS Carbon Monoxide Detector IC
(Tape and Reel)
Package:
SS20 = Plastic Shrink Small Outline - Narrow, 5.33 mm Body,
20-Lead (SSOP)
2013 Microchip Technology Inc.
DS25172A-page 21
RE46C800
NOTES:
DS25172A-page 22
2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
32
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2013, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620771143
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
== ISO/TS 16949 ==
2013 Microchip Technology Inc.
DS25172A-page 23
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
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Tel: 91-20-2566-1512
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Tel: 49-89-627-144-0
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Tel: 678-957-9614
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Tel: 86-10-8569-7000
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Tel: 39-0331-742611
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Tel: 81-3-6880- 3770
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Fax: 65-6334-8850
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Fax: 317-773-5453
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Tel: 949-462-9523
Fax: 949-462-9608
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Toronto
Mississauga, Ontario,
Canada
China - Xiamen
Tel: 905-673-0699
Fax: 905-673-6509
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
11/29/12
DS25172A-page 24
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