SST26VF040AT-104E/MFVAO [MICROCHIP]

2.5V/3.0V 4-Mbit Serial Quad I/O™ (SQI™) Flash Memory;
SST26VF040AT-104E/MFVAO
型号: SST26VF040AT-104E/MFVAO
厂家: MICROCHIP    MICROCHIP
描述:

2.5V/3.0V 4-Mbit Serial Quad I/O™ (SQI™) Flash Memory

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SST26VF040A  
2.5V/3.0V 4-Mbit Serial Quad I/O™ (SQI™) Flash Memory  
• Security ID:  
Features  
- One-Time-Programmable (OTP) 2-Kbyte  
• Single Voltage Read and Write Operations:  
Secure ID:  
- 2.7V-3.6V or 2.3V-3.6V  
- 128-bit unique, factory preprogrammed  
identifier  
• Serial Interface Architecture:  
- Nibble-wide multiplexed I/O’s with SPI-like  
- User-programmable area  
serial command structure:  
Temperature Range:  
- Mode 0 and Mode 3  
- Industrial: -40°C to +85°C  
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol  
- Extended: -40°C to +125°C  
• High-Speed Clock Frequency:  
• Automotive AEC-Q100 Qualified  
- 2.7V-3.6V: 104 MHz maximum (Industrial)  
• Packages Available:  
- 2.3V-3.6V: 80 MHz maximum (Industrial and  
- 8-contact WDFN (6 mm x 5 mm)  
Extended)  
- 8-lead SOIC (3.90 mm)  
• Burst Modes:  
• All Devices are RoHS Compliant  
- Continuous linear burst  
- 8/16/32/64-byte linear burst with wrap-around  
Product Description  
• Superior Reliability:  
The Serial Quad I/O™ (SQI™) family of Flash memory  
- Endurance: 100,000 cycles (minimum)  
devices features a six-wire, 4-bit I/O interface that  
- Greater than 100 years data retention  
allows for low-power, high-performance operation in a  
• Low-Power Consumption:  
low pin count package. SST26VF040A also supports  
- Active Read current: 15 mA (typical @  
104 MHz)  
full command-set compatibility to traditional Serial  
Peripheral Interface (SPI) protocol. System designs  
using SQI Flash devices occupy less board space and  
ultimately lower system costs.  
- Standby Current: 15 µA (typical)  
• Fast Erase Time:  
- Sector/Block Erase: 20 ms (typical), 25 ms  
(maximum)  
All members of the 26 Series, SQI family are manufac-  
tured with proprietary, high-performance CMOS Super-  
Flash® technology. The split-gate cell design and  
thick-oxide tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
- Chip Erase: 40 ms (typical), 50 ms  
(maximum)  
• Page-Program:  
SST26VF040A significantly improves performance and  
reliability, while lowering power consumption. These  
devices write (Program or Erase) with a single-power  
supply of 2.3V-3.6V. The total energy consumed is a  
function of the applied voltage, current and time of  
application. Since for any given voltage range, the  
SuperFlash technology uses less current to program  
and has a shorter erase time, the total energy  
consumed during any erase or program operation is  
less than alternative Flash memory technologies.  
- 256 bytes per page in x1 or x4 mode  
• End-of-Write Detection:  
- Software polling the BUSY bit in STATUS  
register  
• Flexible Erase Capability:  
- Uniform 4-Kbyte sectors  
- Uniform 32-Kbyte overlay blocks  
- Uniform 64-Kbyte overlay blocks  
• Write-Suspend:  
See Figure 2-1 for pin assignments.  
- Suspend program or erase operation to  
access another block/sector  
• Software Reset (RST) mode  
• Software Write Protection:  
- Write protection through Block Protection bits  
in STATUS register  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 1  
SST26VF040A  
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2020-2021 Microchip Technology Inc.  
DS20006292B-page 2  
SST26VF040A  
1.0  
BLOCK DIAGRAM  
FIGURE 1-1:  
FUNCTIONAL BLOCK DIAGRAM  
OTP  
®
SuperFlash  
X - Decoder  
Address  
Memory  
Buffers  
and  
Latches  
Y - Decoder  
Page Buffer,  
I/O Buffers  
and  
Control Logic  
Data Latches  
Serial Interface  
WP# HOLD# SCK CE# SIO [3:0] RESET#  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 3  
SST26VF040A  
2.0  
PIN DESCRIPTION  
FIGURE 2-1:  
PIN DESCRIPTIONS  
PIN ASSIGNMENT FOR 8-CONTACT WDFN  
PIN ASSIGNMENT FOR 8-LEAD SOIC  
1
2
8
7
CE#  
VDD  
CE#  
1
2
8
7
VDD  
SO/SIO1  
WP#/SIO2  
Vss  
RESET#/HOLD#/SIO3  
SO/SIO1  
RESET#/HOLD#/SIO3  
Top View  
Top View  
SCK  
3
4
6
5
WP#/SIO2  
Vss  
3
4
6
5
SCK  
SI/SIO0  
SI/SIO0  
TABLE 2-1:  
Symbol  
SCK  
PIN DESCRIPTION  
Pin Name  
Functions  
Serial Clock  
Provide the timing of the serial interface.  
Commands, addresses, or input data are latched on the rising edge of the clock  
input, while output data is shifted out on the falling edge of the clock input.  
SIO[3:0]  
Serial Data  
Input/Output  
Transfer commands, addresses, or data serially into the device or data out of  
the device. Inputs are latched on the rising edge of the serial clock. Data is  
shifted out on the falling edge of the serial clock. The Enable Quad I/O (EQIO)  
command instruction configures these pins for Quad I/O mode.  
SI  
Serial Data Input  
for SPI mode  
Transfer commands, addresses or data serially into the device. Inputs are  
latched on the rising edge of the serial clock. SI is the default state after a  
Power-on Reset or hardware Reset.  
SO  
Serial Data Output Transfer data serially out of the device. Data is shifted out on the falling edge of  
for SPI mode  
the serial clock. SO is the default state after a Power-on Reset or hardware  
Reset.  
CE#  
WP#  
HOLD#  
Chip Enable  
The device is enabled by a high-to-low transition on CE#. CE# must remain low  
for the duration of any command sequence; or in the case of write operations,  
for the command/data input sequence.  
Write-Protect  
Hold  
The WP# pin is used in conjunction with the WPEN and IOC bits in the Configu-  
ration register to prohibit write operations to the Block Protection register. This  
pin only works in SPI, single-bit and dual-bit Read mode.  
Temporarily stops serial communication with the SPI Flash memory while the  
device is selected. This pin only works in SPI, single-bit and dual-bit Read mode  
and must be tied high when not in use.  
RESET#  
VDD  
Reset  
Reset the operation and internal logic of the device.  
Provide power supply voltage.  
Power Supply  
Ground  
VSS  
Note:  
The exposed pad on the bottom side of WDFN package is internally not connected. It can externally be  
soldered to ground for better device attachment to the board.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 4  
SST26VF040A  
SQI Flash memory supports both Mode 0 (0,0) and  
Mode 3 (1,1) bus operations. The difference between  
the two modes is the state of the SCK signal when the  
bus host is in Standby mode and no data is being trans-  
ferred. The SCK signal is low for Mode 0 and SCK sig-  
nal is high for Mode 3. For both modes, the Serial Data  
I/O (SIO[3:0]) is sampled at the rising edge of the SCK  
clock signal for input, and driven after the falling edge  
of the SCK clock signal for output. The traditional SPI  
protocol uses separate input (SI) and output (SO) data  
signals as shown in Figure 4-1. The SQI protocol uses  
four multiplexed signals, SIO[3:0], for both data in and  
data out, as shown in Figure 4-2. This means the SQI  
protocol quadruples the traditional bus transfer speed  
at the same clock frequency, without the need for more  
pins on the package.  
3.0  
MEMORY ORGANIZATION  
The SST26VF040A SQI memory array is organized in  
uniform, 4-Kbyte erasable sectors with the following  
erasable blocks: with 32-Kbyte overlay erasable blocks  
and 64-Kbyte overlay erasable blocks.  
4.0  
DEVICE OPERATION  
SST26VF040A supports both Serial Peripheral  
Interface (SPI) bus protocol and a 4-bit multiplexed SQI  
bus protocol. To provide backward compatibility to  
traditional SPI Serial Flash devices, the device’s initial  
state after a Power-on Reset is SPI mode which  
supports multi-I/O (x1/x2/x4) read/write commands. A  
command instruction configures the device to SQI  
mode. The dataflow in the SQI mode is similar to the  
SPI mode, except it uses four multiplexed I/O signals  
for command, address, and data sequence.  
FIGURE 4-1:  
SPI PROTOCOL (TRADITIONAL 25 SERIES SPI DEVICE)  
CE#  
MODE 3  
MODE 3  
SCK  
MODE 0  
MODE 0  
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0  
SI  
Don’t Care  
MSB  
High-Impedance  
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0  
MSB  
SO  
FIGURE 4-2:  
SQI SERIAL QUAD I/O PROTOCOL  
CE#  
MODE 3  
MODE 3  
MODE 0  
CLK  
MODE 0  
SIO[3:0]  
C1 C0 A5 A4 A3 A2 A1 A0  
H0 L0 H1 L1 H2 L2 H3 L3  
MSB  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 5  
SST26VF040A  
4.1  
Device Protection  
4.2  
Hardware Write Protection  
SST26VF040A offers a software write protection  
scheme that allows group protection of selected blocks  
in memory array. The Write Protection Pin (WP#)  
enables or disables the lock-down (BPL bit) of the  
STATUS register. In addition, the Lock-Down  
Protection Settings command also prevents any  
changes to the block protection setting (BP0, BP1 and  
BP2) during device operation. To avoid inadvertent  
writes during power-up, the device is write-protected by  
default after a Power-on Reset cycle.  
The hardware Write Protection pin (WP#) is used in  
conjunction with the WPEN and IOC bits in the  
Configuration register to enable the lock-down function  
of the BPL bit (bit 7) in the STATUS register and the  
Configuration register. The WP# pin function only  
works in SPI Single-Bit and Dual-Bit Read mode when  
the IOC bit in the Configuration register is set to ‘0’. The  
WP# pin function is disabled when the WPEN bit in the  
Configuration register is ‘0’. This allows installation of  
the device in a system with a grounded WP# pin while  
still enabling write to the BP bits in the STATUS  
register.  
4.1.1  
GROUP BLOCK PROTECTION  
The Block Protection bits (BP0, BP1, BP2, and BPL) in  
the STATUS register provide write protection to the  
memory array and the STATUS register. See Table 4-4  
for the Block Protection description.  
The factory default setting at power-up of the WPEN bit  
is ‘0’, disabling the Write-Protect function of the  
WP# pin after power-up. WPEN is a nonvolatile bit;  
once the bit is set to ‘1’, the Write-Protect function of  
the WP# pin continues to be enabled after power-up.  
The WP# pin only protects the BPL bit in the STATUS  
register and Configuration register from changes.  
Therefore, if the WP# pin is set to low while an internal  
write is in progress, it will have no effect on the write  
command. The IOC bit takes priority over the WPEN bit  
in the Configuration register. When the IOC bit is ‘1’, the  
function of the WP# pin is disabled and the WPEN bit  
serves no function. When WP# is driven low and IOC  
bit = 0, the execution of the Write STATUS Register  
(WRSR) instruction to change the BP bits in the STATUS  
register is determined by the value of the BPL bit (see  
Table 4-1). When WP# is high, the lock-down function  
of the BPL bit is disabled.  
4.1.2  
VOLATILE LOCK PROTECTION  
To prevent changes to the Block Protection settings,  
use the Lock-Down Protection Settings (LDPS)  
command to enable Volatile Lock Protection. Once  
Volatile Lock Protection is enabled, the Block  
Protection settings cannot be changed. To avoid  
inadvertent lock-down, the WREN command must be  
executed prior to the LDPS command. To reset Volatile  
Lock Protection, performing a hardware Reset or  
power cycle on the device is required. The Volatile Lock  
Protection status may be read from the Configuration  
register.  
TABLE 4-1:  
WRITE PROTECTION LOCK-DOWN STATES  
WRSR Instruction to Change BP0,  
WRSR Instruction to  
Change Configuration  
Register  
VLP  
WP#  
IOC  
WPEN  
BPL  
BP1, BP2, BP3 Bits in STATUS  
Register  
0
0
0
0
0
1
1
1
1
L
L
L
L
H
L
L
L
H
0
0
0
1
X
0
0
1
X
0
1
1
X
X
0
1
X
X
X
0
1
X
X
X
X
X
X
Allowed  
Allowed  
Allowed  
Not Allowed  
Not Allowed  
Allowed  
Not Allowed  
Allowed  
Allowed  
Allowed  
Not Allowed  
Not Allowed  
Not Allowed  
Not Allowed  
Allowed  
Not Allowed  
Allowed  
Allowed  
Note: X = “Don’t care”  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 6  
SST26VF040A  
SST26VF040A ships with the IOC bit set to ‘0’ and the  
HOLD# pin function enabled. The HOLD# pin is always  
disabled in SQI mode and only works in SPI Single-bit  
and Dual-bit Read mode.  
4.3  
Security ID  
SST26VF040A offers a 2-Kbyte Security ID (Sec ID)  
feature. The Security ID space is divided into two parts:  
one factory-programmed, 128-bit segment, and one  
user-programmable segment.  
The factory-programmed segment is programmed  
during part manufacture with a unique number and  
cannot be changed. The user-programmable segment  
is left unprogrammed for the customer to program as  
desired.  
To activate the Hold mode, CE# must be in active-low  
state. The Hold mode begins when the SCK active-low  
state coincides with the falling edge of the HOLD#  
signal. The Hold mode ends when the HOLD# signal’s  
rising edge coincides with the SCK active-low state.  
If the falling edge of the HOLD# signal does not  
coincide with the SCK active-low state, then the device  
enters Hold mode when the SCK next reaches the  
active-low state. Similarly, if the rising edge of the  
HOLD# signal does not coincide with the SCK  
active-low state, then the device exits Hold mode when  
the SCK next reaches the active-low state. See  
Figure 4-3.  
Use the Program Security ID (PSID) command to  
program the Security ID using the address shown in  
Table 5-5. The Security ID can be locked using the  
Lockout Security ID (LSID) command. This prevents  
any future write operations to the Security ID.  
The factory-programmed portion of the Security ID can  
not be programmed by the user; neither the  
factory-programmed nor user-programmable areas  
can be erased.  
Once the device enters Hold mode, SO will be in  
high-impedance state while SI and SCK can be VIL or  
VIH.  
If CE# is driven active-high during a Hold condition, it  
resets the internal logic of the device. As long as  
HOLD# signal is low, the memory remains in the Hold  
condition. To resume communication with the device,  
HOLD# must be driven active-high, and CE# must be  
driven active-low.  
4.4  
Hold Operation  
The HOLD# pin pauses active serial sequences  
without resetting the clocking sequence. This pin is  
active after every power-up and only operates  
during SPI Single-bit and Dual-bit modes.  
FIGURE 4-3:  
HOLD CONDITION WAVEFORM  
SCK  
HOLD#  
Active  
Hold  
Active  
Hold  
Active  
4.5.1  
HARDWARE RESET OPERATION  
4.5  
Reset Operation  
To configure the RESET#/HOLD#/SIO3 pin as a  
RESET# pin, bit 6 of the Configuration register must be  
set to ‘1’. The factory default setting of bit 6 is  
0’-HOLD# pin enabled. This is a nonvolatile bit, so the  
register value at power-up will be the value prior to  
power-down. Driving the RESET# pin high puts the  
device in normal operating mode. The RESET# pin  
must be driven low for a minimum of TRST time to reset  
the device. The SIO1 pin (SO) is in high-impedance  
state while the device is in Reset. A successful Reset  
operation will reset the protocol to SPI mode, STATUS  
register bits will become as follows: BUSY = 0,  
WEL = 0, BP0 = 1, BP1 = 1, BP2 = 1 and BPL = 0;  
reset the burst length to 8 bytes. Reset during an active  
program or erase operation aborts the operation and  
data of the targeted address range may be corrupted or  
lost due to the aborted erase or program operation.  
If the RST#/HOLD#SIO3 pin is used as a Reset pin,  
RST# pin provides a hardware method for resetting the  
device. SST26VF040A supports both hardware and  
software Reset operation. Hardware Reset is only  
allowed using SPI x1 and x2 protocol. Software Reset  
commands 66H and 99H are supported in all protocols.  
See Table 4-2 and for Figure 4-4 for hardware and  
software Reset functionality.  
Note:  
A device Reset during an active program  
or erase operation aborts the operation  
and data of the targeted address range  
may be corrupted or lost due to the  
aborted erase or program operation.  
Depending on the prior operation, the Reset timing may  
vary. Recovery from a write operation requires more  
latency time than recovery from other operations.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 7  
SST26VF040A  
Once the Reset Enable and Reset commands are  
successfully executed, the device returns to normal  
operation Read mode and then does the following:  
resets the protocol to SPI mode, resets the burst length  
to 8 bytes, STATUS register bits BUSY = 0, WEL = 0;  
and clears bit 1 (IOC) in the Configuration register to its  
default state.  
4.5.2  
SOFTWARE RESET OPERATION  
The Reset operation requires the Reset Enable  
command, 66H, followed by the Reset command, 99H.  
Note:  
Any command other than the Reset com-  
mand after the Reset Enable command  
will disable the Reset Enable.  
FIGURE 4-4:  
PERFORMING SOFTWARE RESET DURING READ  
Device requires Software Reset  
while performing Read.  
Issue either a Reset Quad I/O command  
(0xFF instruction) or a Software Reset  
command (0x66 instruction followed by  
0x99 instruction) to exit mode Read.  
Was the previous  
Instruction a  
mode Read with  
M[7:0]=AXH  
Yes  
No  
Issue Software Reset command (0x66  
instruction followed by 0x99 instruction)  
to reset the device.  
Device is Reset.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 8  
SST26VF040A  
TABLE 4-2:  
REGISTER SETTINGS AFTER HARDWARE AND SOFTWARE RESET  
After Power Cycle  
After Hardware Reset  
After Software Reset  
Status Register Bits  
Busy Bit  
0
0
1
1
1
0
0
0
1
1
1
0
0
WEL Bit  
0
BP0 Bit  
Unchanged  
Unchanged  
Unchanged  
Unchanged  
BP1 Bit  
BP2 Bit  
BPL Bit  
Configuration Register Bits  
IOC Bit  
0
0
0
VLP Bit  
0
0
Unchanged  
Unchanged  
0
SEC Bit  
Unchanged  
0
Unchanged  
0
WSE Bit  
WSP Bit  
0
0
0
RSTHLD Bit  
WPEN Bit  
Unchanged  
Unchanged  
Unchanged  
Unchanged  
Unchanged  
Unchanged  
4.6  
STATUS Register  
The software STATUS register provides status on  
whether the Flash memory array is available for any  
read or write operation, whether the device is  
write-enabled, and the state of the memory write  
protection. During an internal erase or program  
operation, the STATUS register may be read only to  
determine the completion of an operation in progress.  
Table 4-3 describes the function of each bit in the  
software STATUS register.  
TABLE 4-3:  
SOFTWARE STATUS REGISTER  
Function  
Default at  
Power-Up  
Bit  
Name  
Read/Write  
0
BUSY 1= Internal write operation is in progress  
0= No internal write operation is in progress  
0
R
1
WEL  
1= Device is memory write-enabled  
0
R
0= Device is not memory write-enabled  
2
3
4
5
6
7
BP0  
BP1  
BP2  
BP3  
RES  
BPL  
Indicate current level of block write protection (see Table 4-4)  
Indicate current level of block write protection (see Table 4-4)  
Indicate current level of block write protection (see Table 4-4)  
Indicate current level of block write protection (see Table 4-4)  
Reserved  
1
1
1
0
0
0
R/W  
R/W  
R/W  
R/W  
R
1= BP3, BP2, BP1, BP0 are read-only bits  
0= BP3, BP2, BP1, BP0 are read/writable  
R/W  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 9  
SST26VF040A  
4.6.1  
BUSY  
4.6.3  
BLOCK PROTECTION (BP3, BP2,  
BP1, BP0)  
The BUSY bit determines whether there is an internal  
erase or program operation in progress. A ‘1’ for the  
BUSY bit indicates the device is busy with an operation  
in progress. A ‘0’ indicates the device is ready for the  
next valid operation.  
The Block Protection (BP3, BP2, BP1, BP0) bits define  
the size of the memory area, as defined in Table 4-4, to  
be software-protected against any memory write (pro-  
gram or erase) operations.  
The Write STATUS Register (WRSR) instruction is used  
to program the BP3, BP2, BP1 and BP0 bits as long as  
WP# pin is high or the Block Protect Lock (BPL) bit is  
0’. Chip Erase can only be executed if Block Protection  
bits are ‘0’. After power-up, BP3, BP2, BP1 and BP0  
are set to defaults specified in Table 4-4.  
4.6.2  
WRITE ENABLE LATCH (WEL)  
The Write Enable Latch bit indicates the status of the  
internal memory Write Enable Latch. If the Write  
Enable Latch bit is set to ‘1’, it indicates the device is  
write-enabled. If the bit is set to ‘0’ (Reset), it indicates  
the device is not write-enabled and does not accept  
any memory write (program/erase) commands. The  
Write Enable Latch bit is automatically reset under the  
following conditions:  
4.6.4  
BLOCK PROTECTION LOCK-DOWN  
(BPL)  
WP# pin driven low (VIL), IO bit = 0and WPEN bit = 1  
enable the Block Protection Lock-Down (BPL) bit.  
When BPL is set to ‘1’, it prevents any further alteration  
of the BPL, BP3, BP2, BP1, and BP0 bits. When the  
WP# pin is driven high (VIH), the BPL bit has no effect  
and its value is “don’t care”. After power-up and  
hardware Reset, the BPL bit is reset to ‘0’.  
• Power-Up  
• Write Disable (WRDI) instruction completion  
• Page Program instruction completion  
• Sector Erase instruction completion  
• Block Erase instructions (32-Kbyte and 64-Kbyte)  
completion  
• Chip Erase instruction completion  
• Write STATUS Register instruction completion  
• Software or hardware Reset  
• Lock-Down Protection Setting instruction comple-  
tion  
• Program Security ID instruction completion  
• Lockout Security ID instruction completion  
• Write-Suspend instruction  
• SPI Quad Page program instruction completion  
TABLE 4-4:  
SOFTWARE STATUS REGISTER BLOCK PROTECTION  
STATUS Register Bit  
Protected Memory Address  
Protected Level  
BP3  
BP2  
BP1  
BP0  
8 Mbit  
None  
Upper 1/8  
Upper 1/4  
Upper 1/2  
All  
X
X
X
X
X
X
X
X
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
None  
70000H-7FFFFH  
60000H-7FFFFH  
40000H-7FFFFH  
00000H-7FFFFH  
00000H-7FFFFH  
00000H-7FFFFH  
00000H-7FFFFH  
All  
All  
All  
Note 1: X = “Don’t care” (Reserved) default is ‘0’.  
2: Default at power-up for BP3, BP2, BP1 and BP0 is ‘0111’.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 10  
SST26VF040A  
4.7  
Configuration Register  
The Configuration register is a Read/Write register that  
stores a variety of configuration information. See  
Table 4-5 for the function of each bit in the register.  
TABLE 4-5:  
Bit  
CONFIGURATION REGISTER  
Name Function  
Default at  
Power-Up  
Read/Write  
(R/W)  
0
1
Reserved  
IOC  
R
I/O Configuration  
0(1)  
R/W  
1= WP# and RST# or HOLD# pins disabled  
0= WP# and RST# or HOLD# pins enabled  
2
VLP  
Volatile Lock Protection  
0(1)  
R
1 = Locks Protection bit setting of BP0, BP1, BP2, BP3  
of STATUS register  
0= Protection bit BP0, BP1, BP2, BP3 setting not  
locked by VLP bit  
3
4
5
6
7
SEC  
WSE  
WSP  
Security ID Status  
1= Security ID space locked  
0= Security ID space not locked  
0(2)  
R
R
Write Suspend Erase Status  
1= Erase suspended  
0= Erase is not suspended  
0
Write Suspend Program Status  
1= Program suspended  
0= Program is not suspended  
0
R
RSTHLD RST# pin or HOLD# Pin Enable  
1= RST# pin enabled  
0(3)  
R/W  
R/W  
0= HOLD# pin enabled  
WPEN  
Write Protection Pin (WP#) Enable  
1 = WP# enabled  
0(3)  
0 = WP# disabled  
Note 1: Default at power-up or after hardware Reset is ‘0’.  
2: The Security ID status will always be ‘1’ at power-up after a successful execution of the Lockout Security  
ID instruction, otherwise default at power-up is ‘0’.  
3: Factory default setting. This is a nonvolatile bit, default at power-up will be the setting prior to  
power-down.  
4.7.1  
I/O CONFIGURATION (IOC)  
4.7.2  
VOLATILE LOCK PROTECTION  
(VLP)  
The I/O Configuration (IOC) bit reconfigures the I/O  
pins. The IOC bit is set by writing a ‘1’ to Bit 1 of the  
Configuration register. When IOC bit is ‘0’ the WP# pin  
and HOLD# pin or RST# pin are enabled (SPI or Dual  
configuration setup). When the IOC bit is set to ‘1’ the  
SIO2 and SIO3 pins are enabled (SPI Quad I/O config-  
uration setup). The IOC bit must be set to ‘1’ before  
issuing the following SPI commands: SQOR (6BH),  
SQIOR (EBH), SPI Quad page program (32H) and  
RBSPI (ECH). Without setting the IOC bit to ‘1’, those  
SPI commands are not valid. The I/O Configuration bit  
does not apply when in SQI mode. The default at  
power-up and after hardware/software Reset is ‘0’.  
The Volatile Lock Protection (VLP) bit is a volatile bit  
which is set to ‘1’ when a lock-down protection settings  
(LDPS) command is executed. When VLP bit is set  
to ‘1’, it locks the protection bit BP0, BP1, BP2, BP3  
settings of the STATUS register. The VLP bit can be  
cleared to ‘0’ only by performing a hardware Reset or  
by performing a power cycle.  
4.7.3  
SECURITY ID STATUS (SEC)  
The Security ID Status (SEC) bit indicates when the  
Security ID space is locked to prevent a write com-  
mand. The SEC bit is ‘1’ after the host issues a Lockout  
SID command. Once the host issues a Lockout SID  
command, the SEC bit can never be reset to ‘0’.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 11  
SST26VF040A  
4.7.4  
WRITE SUSPEND ERASE STATUS  
(WSE)  
The Write Suspend Erase status (WSE) indicates when  
an erase operation is suspended. The WSE bit is ‘1’  
after the host issues a suspend command during an  
erase operation. Once the suspended erase resumes,  
the WSE bit is reset to ‘0’.  
4.7.5  
WRITE SUSPEND PROGRAM  
STATUS (WSP)  
The Write Suspend Program status (WSP) bit indicates  
when a program operation is suspended. The WSP  
is ‘1’ after the host issues a suspend command during  
the program operation. Once the suspended program  
operation resumes, the WSP bit is reset to ‘0’.  
4.7.6  
RESET/HOLD ENABLE (RSTHLD)  
The Reset/Hold Enable (RSTHLD) bit is a nonvolatile  
bit that configures the RST#/HOLD#/SIO3 pin to be  
either the RST# pin or the Hold# pin when not config-  
ured as an I/O. There is latency associated with writing  
to the RSTHLD bit. Poll the BUSY bit in the STATUS  
register or wait TCONFIG for the completion of the  
internal, self-timed write operation.  
4.7.7  
WRITE-PROTECT ENABLE (WPEN)  
The Write-Protect Enable (WPEN) bit is a nonvolatile  
bit that enables the WP# pin. The Write-Protect (WP#)  
pin and the Write-Protect Enable (WPEN) bit control  
the programmable hardware write-protect feature.  
Setting the WP# pin to low, and the WPEN bit to ‘1’,  
enables hardware write protection. To disable  
hardware write protection, set either the WP# pin to  
high or the WPEN bit to ‘0’. There is latency associated  
with writing to the WPEN bit. Poll the BUSY bit in the  
STATUS register or wait TCONFIG for the completion  
of the internal, self-timed write operation. When the  
chip is hardware write-protected, only write operations  
to the BPL bit in the STATUS register and Configuration  
register are disabled. See Section 4.2 “Hardware  
Write Protection” and Table 4-1 for more information  
about the functionality of the WPEN bit.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 12  
SST26VF040A  
5.0  
INSTRUCTIONS  
Instructions are used to read, write (erase and pro-  
gram), and configure the SST26VF040A. The com-  
plete list of the instructions is provided in Table 5-1.  
TABLE 5-1:  
Instruction  
DEVICE OPERATION INSTRUCTIONS  
Op  
Mode  
Address  
Dummy  
Cycle(s)  
Data  
Cycle(s)  
Maximum  
Frequency  
Description  
Code  
Cycle  
(2,3)  
(3)  
(3)  
(4)  
Cycle(s)  
(1)  
SPI  
SQI  
Configuration  
NOP  
No Operation  
Reset Enable  
00H  
66H  
99H  
38H  
FFH  
05H  
X
X
X
X
X
X
X
X
X
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
RSTEN  
RST  
0
0
Reset Memory  
Enable Quad I/O  
Reset Quad I/O  
EQIO  
RSTQIO  
0
X
0
(5)  
104 MHz/80 MHz  
RDSR  
Read STATUS  
Register  
1 to  
1 to ∞  
1 to 2  
X
X
WRSR  
RDCR  
Write STATUS  
Register  
01H  
35H  
X
X
Read Configuration  
Register  
0
0
0
1
1 to ∞  
1 to ∞  
X
X
Read  
READ  
Read Memory  
03H  
0BH  
X
X
3
3
3
3
3
3
0
1
3
1
1
1
1 to ∞  
1 to ∞  
1 to ∞  
1 to ∞  
1 to ∞  
1 to ∞  
40 MHz  
104 MHz/80 MHz  
80 MHz  
High-Speed Read Memory at  
Read  
Higher Speed  
(6)  
SDOR  
SPI Dual Output Read  
SPI Dual I/O Read  
3BH  
BBH  
6BH  
X
X
X
(7,8)  
SDIOR  
(9)  
SQOR  
SPI Quad Output  
Read  
(10)  
SQIOR  
SB  
SPI Quad I/O Read  
Set Burst Length  
EBH  
C0H  
0CH  
X
X
3
0
3
3
0
3
1 to ∞  
1
X
X
104 MHz/80 MHz  
RBSQI  
SQI nB Burst with  
Wrap  
n to ∞  
RBSPI  
SPI nB Burst with  
Wrap  
ECH  
X
3
3
n to ∞  
Identification  
®
JEDEC ID JEDEC ID Read  
Quad J-ID Quad I/O J-ID Read  
9FH  
AFH  
5AH  
X
X
0
0
3
0
1
1
3 to ∞  
3 to ∞  
1 to ∞  
X
104 MHz/80 MHz  
SFDP  
Serial Flash Discover-  
able Parameters  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 13  
SST26VF040A  
TABLE 5-1:  
DEVICE OPERATION INSTRUCTIONS (CONTINUED)  
Op  
Code  
Cycle  
Mode  
Address  
Cycle(s)  
Dummy  
Cycle(s)  
Data  
Cycle(s)  
Maximum  
Frequency  
Instruction  
Description  
(2,3)  
(3)  
(3)  
(4)  
(1)  
SPI  
SQI  
Write  
WREN  
WRDI  
Write Enable  
06H  
04H  
20H  
X
X
X
X
X
X
0
0
3
0
0
0
0
0
0
Write Disable  
4-Kbyte  
Sector  
Erase  
Erase 4 Kbyte of  
Memory Array  
(11)  
32-Kbyte  
Block  
Erase  
Erase 32 Kbyte of  
Block Memory Array  
52H  
D8H  
X
X
X
X
3
3
0
0
0
0
0
(12)  
64-Kbyte  
Block  
Erase 64 Kbyte of  
Block Memory Array  
(13)  
Erase  
104 MHz/80 MHz  
Chip Erase Erase Full Memory  
Array  
60H or  
C7H  
X
X
X
X
X
X
X
0
3
3
0
0
0
0
0
0
0
Page  
Program  
To Program 1 to 256  
Data Bytes  
02H  
32H  
B0H  
30H  
1 to 256  
SPI Quad  
SPI Quad Page  
Program  
1 to 256  
(9)  
PP  
WRSU  
WRRE  
Suspends  
Program/Erase  
X
X
0
0
Resume  
Program/Erase  
Protection  
LDPS  
Lock-Down  
Protection Settings  
8DH  
88H  
X
X
X
0
0
0
RSID  
Read Security ID  
2
2
2
1
3
0
1 to 1024  
1 to 1024  
1 to 256  
X
X
104 MHz/80 MHz  
PSID  
LSID  
Program User  
Security ID Area  
A5H  
85H  
X
X
Lockout Security ID  
Programming  
X
0
0
0
2020-2021 Microchip Technology Inc.  
DS20006292B-page 14  
SST26VF040A  
TABLE 5-1:  
Instruction  
DEVICE OPERATION INSTRUCTIONS (CONTINUED)  
Op  
Code  
Cycle  
Mode  
Address  
Cycle(s)  
Dummy  
Cycle(s)  
Data  
Cycle(s)  
Maximum  
Frequency  
Description  
(2,3)  
(3)  
(3)  
(4)  
(1)  
SPI  
SQI  
Power-Saving  
DPD  
Deep Power-Down  
Mode  
B9H  
ABH  
X
X
X
X
0
3
0
0
0
104 MHz/80 MHz  
RDPD  
Release from Deep  
Power-Down and  
Read ID  
1 to ∞  
Note 1: Command cycle is two clock periods in SQI mode and eight clock periods in SPI mode.  
2: Address bits above the Most Significant bit of each density can be VIL or VIH.  
3: Address, Dummy/Mode bits, and data cycles are two clock periods in SQI and eight clock periods in SPI mode.  
4: The maximum frequency for all instructions is up to 104 MHz from 2.7V-3.6V and up to 80 MHz from 2.3V-3.6V  
unless otherwise noted. For extended temperature (125°C) the maximum frequency is up to 80 MHz.  
5: The Read STATUS register is continuous with ongoing clock cycles until terminated by a low-to-high transition  
on CE#.  
6: Data cycles are four clock periods.  
7: The maximum frequency for SDIOR is up to 80 MHz from 2.3V-3.6V.  
8: Address, Dummy/Mode bits, and data cycles are four clock periods.  
9: Data cycles are two clock periods. IOC bit must be set to ‘1’ before issuing the command.  
10: Address, Dummy/Mode bits, and data cycles are two clock periods. IOC bit must be set to ‘1’ before issuing the  
command.  
11: 4-Kbyte Sector Erase addresses: use AMS-A12, remaining addresses are “don’t care” but must be set either at  
VIL or VIH.  
12: 32-Kbyte Block Erase addresses: use AMS-A15, remaining addresses are “don’t care” but must be set either at  
VIL or VIH.  
13: 64-Kbyte Block Erase addresses: use AMS-A16, remaining addresses are “don’t care” but must be set either at  
VIL or VIH.  
Once the Reset Enable and Reset commands are  
successfully executed, the device returns to normal  
5.1  
No Operation (NOP)  
The No Operation command only cancels a Reset  
Enable command. NOP has no impact on any other  
command.  
operation Read mode and then does the following:  
resets the protocol to SPI mode, resets the burst length  
to 8 bytes, clears BUSY bit and WEL bit in the STATUS  
register to their default states, and clears IOC bit,  
WSE bit and WSP bit in the Configuration register to its  
default state. A device Reset during an active program  
or erase operation aborts the operation, which can  
cause the data of the targeted address range to be  
corrupted or lost. Depending on the prior operation, the  
Reset timing may vary. Recovery from a write operation  
requires more latency time than recovery from other  
operations. See Table 8-2 for Reset timing parameters.  
5.2  
Reset Enable (RSTEN) and Reset  
(RST)  
The Reset operation is used as a system (software)  
Reset that puts the device in normal operating Ready  
mode. This operation consists of two commands:  
Reset Enable (RSTEN) followed by Reset (RST).  
To reset SST26VF040A, the host drives CE# low,  
sends the Reset Enable command (66H), and drives  
CE# high. Next, the host drives CE# low again, sends  
the Reset command (99H), and drives CE# high, see  
Figure 5-1.  
The Reset operation requires the Reset Enable  
command followed by the Reset command. Any  
command other than the Reset command after the  
Reset Enable command will disable the Reset Enable.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 15  
SST26VF040A  
FIGURE 5-1:  
RESET SEQUENCE  
T
CPH  
CE#  
CLK  
MODE 3  
MODE 3  
MODE 0  
MODE 3  
MODE 0  
MODE 0  
SIO[3:0]  
C1 C0  
C3 C2  
Note: C[1:0] = 66H; C[3:2] = 99H  
Initiate the READ instruction by executing an 8-bit  
command, 03H, followed by address bits A[23:0].  
CE# must remain active-low for the duration of the  
Read cycle. See Figure 5-2 for the Read sequence.  
5.3  
Read (40 MHz)  
The READ instruction, 03H, is supported in SPI bus  
protocol only with clock frequencies up to 40 MHz.  
This command is not supported in SQI bus protocol.  
The device outputs the data starting from the specified  
address location, then continuously streams the data  
output through all addresses until terminated by a  
low-to-high transition on CE#. The internal Address  
Pointer will automatically increment until the highest  
memory address is reached. Once the highest memory  
address is reached, the Address Pointer will  
automatically return to the beginning (wrap-around) of  
the address space.  
FIGURE 5-2:  
READ SEQUENCE (SPI)  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
8
15 16  
23 24  
31 32  
39 40  
47 48  
55 56  
63 64  
70  
MODE 0  
SCK  
03  
ADD.  
MSB  
High-Impedance  
ADD.  
ADD.  
SI  
MSB  
N
OUT  
N+1  
OUT  
N+2  
OUT  
N+3  
OUT  
N+4  
D
OUT  
D
D
D
D
SO  
MSB  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 16  
SST26VF040A  
5.4  
Enable Quad I/O (EQIO)  
The Enable Quad I/O (EQIO) instruction, 38H, enables  
the Flash device for SQI bus operation. Upon comple-  
tion of the instruction, all instructions thereafter are  
expected to be 4-bit multiplexed input/output (SQI  
mode) until a power cycle or a Reset Quad I/O instruc-  
tion is executed. See Figure 5-3.  
FIGURE 5-3:  
ENABLE QUAD I/O SEQUENCE  
CE#  
SCK  
MODE 3  
MODE 0  
0
1
2
3
4
5
6
7
38  
SIO0  
SIO[3:1]  
Note: SIO[3:1] must be driven VIH.  
To execute a Reset Quad I/O operation, the host drives  
CE# low, sends the Reset Quad I/O command cycle  
(FFH) then drives CE# high. Execute the instruction in  
either SPI (8 clocks) or SQI (2 clocks) command  
cycles. For SPI, SIO[3:1] are “don’t care” for this  
command, but should be driven to VIH or VIL. See  
Figures 5-4 and 5-5.  
5.5  
Reset Quad I/O (RSTQIO)  
The Reset Quad I/O instruction, FFH, resets the device  
to 1-bit SPI protocol operation or exits the Set Mode  
configuration during a read sequence. This command  
allows the Flash device to return to the default I/O state  
(SPI) without a power cycle, and executes in either  
1-bit or 4-bit mode. If the device is in the Set Mode con-  
figuration, while in SQI High-Speed Read mode, the  
RSTQIO command will only return the device to a state  
where it can accept new command instruction. An addi-  
tional RSTQIO is required to reset the device to SPI  
mode.  
FIGURE 5-4:  
RESET QUAD I/O SEQUENCE (SPI)  
CE#  
SCK  
SIO0  
MODE 3  
MODE 0  
0
1
2
3
4
5
6
7
FF  
SIO[3:1]  
Note: SIO[3:1] must be driven VIH.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 17  
SST26VF040A  
FIGURE 5-5:  
RESET QUAD I/O SEQUENCE (SQI)  
CE#  
MODE 3  
MODE 0  
0
1
F
SCK  
SIO[3:0]  
F
Initiate High-Speed Read by executing an 8-bit  
command, 0BH, followed by address bits A[23:0] and a  
dummy byte. CE# must remain active-low for the  
duration of the High-Speed Read cycle. See Figure 5-6  
for the High-Speed Read sequence for SPI bus  
protocol.  
5.6  
High-Speed Read  
The High-Speed Read instruction, 0BH, is supported in  
both SPI bus protocol and SQI protocol. This instruc-  
tion supports frequencies of up to 104 MHz from  
2.7V-3.6V and up to 80 MHz from 2.3V-3.6V. On  
power-up, the device is set to use SPI.  
FIGURE 5-6:  
HIGH-SPEED READ SEQUENCE (SPI) (C[1:0] = 0BH)  
CE#  
MODE 3  
0
1 2 3 4 5 6 7 8  
15 16  
23 24  
31 32  
39 40  
47 48  
55 56  
63 64  
80  
71 72  
SCK  
MODE 0  
0B  
ADD.  
ADD.  
ADD.  
X
SI/SIO0  
N
OUT  
MSB  
N+1  
N+2  
N+3  
D
OUT  
N+4  
High-Impedance  
SO/SIO1  
D
D
D
D
OUT  
OUT  
OUT  
In SQI protocol, the host drives CE# low then sends  
one High-Speed Read command cycle, 0BH, followed  
by three address cycles, a Set Mode configuration  
cycle, and two dummy cycles. Each cycle is two nibbles  
(clocks) long, Most Significant nibble first.  
When M[7:0] = AXH, the device expects the next  
continuous instruction to be another read command,  
0BH, and does not require the opcode to be entered  
again. The host may initiate the next read cycle by  
driving CE# low, then sending the 4-bit input for  
address A[23:0], followed by the Set Mode  
Configuration bits M[7:0], and two dummy cycles. After  
the two dummy cycles, the device outputs the data  
starting from the specified address location. There are  
no restrictions on address location access.  
After the dummy cycles, the device outputs data on the  
falling edge of the SCK signal starting from the  
specified address location. The device continually  
streams data output through all addresses until  
terminated by a low-to-high transition on CE#. The  
internal Address Pointer automatically increments until  
the highest memory address is reached, at which point  
the Address Pointer returns to address location  
000000H. During this operation, blocks that are  
read-locked will output data 00H.  
When M[7:0] is any value other than AXH, the device  
expects the next instruction initiated to be a command  
instruction. To reset/exit the Set Mode configuration,  
execute the Reset Quad I/O command, FFH. While in  
the Set Mode configuration, the RSTQIO command will  
only return the device to a state where it can accept a  
new command instruction. An additional RSTQIO is  
required to reset the device to SPI mode. See  
Figure 5-10 for the SPI Quad I/O Mode Read sequence  
when M[7:0] = AXH.  
The Set Mode Configuration bit M[7:0] indicates if the  
next instruction cycle is another SQI High-Speed Read  
command.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 18  
SST26VF040A  
FIGURE 5-7:  
HIGH-SPEED READ SEQUENCE (SQI)  
CE#  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
20  
21  
MODE 3  
SCK  
MODE 0  
MSN  
LSN  
L0  
C0 C1 A5 A4 A3 A2  
A0  
X
X
X
X
H0  
H8 L8  
M1 M0  
Mode  
SIO[3:0]  
A1  
Command  
Address  
Dummy  
Data Byte 0  
Data Byte 7  
Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble  
Hx = High Data Nibble, Lx = Low Data Nibble C[1:0] = 0BH  
5.7  
SPI Quad Output Read  
The SPI Quad Output Read instruction supports fre-  
Following the dummy byte, the device outputs data  
from SIO[3:0] starting from the specified address  
location. The device continually streams data output  
through all addresses until terminated by a low-to-high  
transition on CE#. The internal Address Pointer  
automatically increments until the highest memory  
address is reached, at which point the Address Pointer  
returns to the beginning of the address space.  
quencies of up to 104 MHz from 2.7V-3.6V and up to  
80 MHz from 2.3V-3.6V. SST26VF040A requires the  
IOC bit in the Configuration register to be set to ‘1’ prior  
to executing the command. Initiate SPI Quad Output  
Read by executing an 8-bit command, 6BH, followed  
by address bits A[23:0] and a dummy byte. CE# must  
remain active-low for the duration of the SPI Quad  
Mode Read. See Figure 5-8 for the SPI Quad Output  
Read sequence.  
FIGURE 5-8:  
SPI QUAD OUTPUT READ  
CE#  
MODE 3  
MODE 0  
31 32  
0
1
2
3
4
5
6
7
8
15 16  
23 24  
39 40 41  
SCK  
6BH  
A[23:16] A[15:8] A[7:0]  
Address  
b4 b0  
SIO0  
X
b4 b0  
Data  
Data  
OP Code  
Dummy Byte 0  
Byte N  
SIO1  
SIO2  
SIO3  
b5 b1  
b6 b2  
b5 b1  
b6 b2  
b7 b3  
b7 b3  
Note:  
MSN = Most Significant Nibble, LSN = Least Significant Nibble  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 19  
SST26VF040A  
5.8  
SPI Quad I/O Read  
The SPI Quad I/O Read (SQIOR) instruction supports  
frequencies of up to 104 MHz from 2.7V-3.6V and up to  
80 MHz from 2.3V-3.6V. SST26VF040A requires the  
IOC bit in the Configuration register to be set to ‘1’ prior  
to executing the command. Initiate SQIOR by execut-  
ing an 8-bit command, EBH. The device then switches  
to 4-bit I/O mode for address bits A[23:0], followed by  
the Set Mode Configuration bits M[7:0], and two  
dummy bytes. CE# must remain active-low for the  
duration of the SPI Quad I/O Read. See Figure 5-9 for  
the SPI Quad I/O Read sequence.  
The Set Mode Configuration bit M[7:0] indicates if the  
next instruction cycle is another SPI Quad I/O Read  
command. When M[7:0] = AXH, the device expects the  
next continuous instruction to be another read com-  
mand, EBH, and does not require the opcode to be  
entered again. The host may set the next SQIOR cycle  
by driving CE# low, then sending the 4-bit wide input for  
address A[23:0], followed by the Set Mode Configura-  
tion bits M[7:0], and two dummy cycles. After the two  
dummy cycles, the device outputs the data starting  
from the specified address location. There are no  
restrictions on address location access.  
Following the dummy bytes, the device outputs data  
from the specified address location. The device  
continually streams data output through all addresses  
until terminated by a low-to-high transition on CE#. The  
internal Address Pointer automatically increments until  
the highest memory address is reached, at which point  
the Address Pointer returns to the beginning of the  
address space.  
When M[7:0] is any value other than AXH, the device  
expects the next instruction initiated to be a command  
instruction. To reset/exit the Set Mode configuration,  
execute the Reset Quad I/O command, FFH. See  
Figure 5-10 for the SPI Quad I/O Mode Read sequence  
when M[7:0] = AXH.  
FIGURE 5-9:  
CE#  
SPI QUAD I/O READ SEQUENCE  
MODE 3  
16  
0
1
2
3
4
5
6
7
8 9 10 11 12 13 14 15  
18 19 20 21 22  
17  
23  
MODE 0  
SCK  
SIO0  
SIO1  
SIO2  
SIO3  
EBH  
b4 b0  
b5 b1  
b6 b2  
A20 A16 A12 A8  
A21 A17 A13 A9  
A22 A18 A14 A10  
A23 A19 A15 A11  
X
X
X
X
X
X
X
X
b4 b0  
b5 b1  
b6 b2  
b7 b3  
A4 A0 M4 M0  
A5 A1 M5 M1  
A6 A2 M6 M2  
X
X
X
X
X
X
X
X
LSN  
MSN  
b7 b3  
A7 A3 M7 M3  
Set  
Data  
Data  
Dummy  
Address  
Byte 1  
Mode  
Byte 0  
Note:  
MSN = Most Significant Nibble, LSN = Least Significant Nibble  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 20  
SST26VF040A  
FIGURE 5-10:  
BACK-TO-BACK SPI QUAD I/O READ SEQUENCES WHEN M[7:0] = AXH  
CE#  
SCK  
SIO0  
SIO1  
SIO2  
SIO3  
9
0
1 2  
3
4
5 6 7 8  
11 12 13  
10  
b4 b0 b4  
b5 b1 b5  
b6 b2 b6  
M4  
M5  
M6  
X
X
X
X
X
X
X
X
X
X
X
X
b4 b0  
b5 b1  
b6 b2  
b0  
b1  
b2  
A20 A16 A12 A8 A4  
A21 A17 A13 A9 A5  
A22 A18 A14 A10 A6  
A0  
A1  
A2  
M0  
M1  
M2  
LSN  
MSN  
b7 b3 b7  
M7  
X
X
X
X
b7 b3  
b3  
A23 A19 A15 A11 A7  
A3  
M3  
Set  
Mode  
Data Data  
Byte Byte  
Data  
Address  
Dummy  
Byte 0  
N
N+1  
Note:  
MSN = Most Significant Nibble, LSN = Least Significant Nibble  
5.9  
Set Burst  
The Set Burst command specifies the number of bytes  
to be output during a Read Burst command before the  
device wraps around. It supports both SPI and SQI pro-  
tocols. To set the burst length the host drives CE# low,  
sends the Set Burst command cycle (C0H) and one  
data cycle, then drives CE# high. After power-up or  
Reset, the burst length is set to eight bytes (00H). See  
Table 5-2 for burst length data and Figures 5-11 and  
5-12 for the sequences.  
TABLE 5-2:  
BURST LENGTH DATA  
Burst Length  
High Nibble (H0)  
Low Nibble (L0)  
8 Bytes  
16 Bytes  
32 Bytes  
64 Bytes  
0h  
0h  
0h  
0h  
0h  
1h  
2h  
3h  
FIGURE 5-11:  
SET BURST LENGTH SEQUENCE (SQI)  
CE#  
MODE 3  
MODE 0  
0
1
2
3
SCK  
SIO[3:0]  
C1 C0 H0 L0  
MSN LSN  
Note:  
MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = C0H  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 21  
SST26VF040A  
FIGURE 5-12:  
SET BURST LENGTH SEQUENCE (SPI)  
CE#  
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15  
MODE 3  
MODE 0  
SCK  
SIO0  
C0  
D
IN  
SIO[3:1]  
Note:  
SIO[3:1] must be driven VIH.  
5.10 SQI Read Burst with Wrap (RBSQI)  
5.11 SPI Read Burst with Wrap (RBSPI)  
SQI Read Burst with Wrap is similar to High-Speed  
Read in SQI mode, except data will output continuously  
within the burst length until a low-to-high transition on  
CE#. To execute a SQI Read Burst operation, drive  
CE# low then send the Read Burst command cycle  
(0CH), followed by three address cycles, and then  
three dummy cycles. Each cycle is two nibbles (clocks)  
long, Most Significant nibble first.  
SPI Read Burst with Wrap (RBSPI) is similar to SPI  
Quad I/O Read except the data will output continuously  
within the burst length until a low-to-high transition on  
CE#. To execute a SPI Read Burst with Wrap opera-  
tion, drive CE# low, then send the Read Burst com-  
mand cycle (ECH), followed by three address cycles,  
and then three dummy cycles.  
After the dummy cycle, the device outputs data on the  
falling edge of the SCK signal starting from the  
specified address location. The data output stream is  
continuous through all addresses until terminated by a  
low-to-high transition on CE#.  
After the dummy cycles, the device outputs data on the  
falling edge of the SCK signal starting from the  
specified address location. The data output stream is  
continuous through all addresses until terminated by a  
low-to-high transition on CE#.  
During RBSPI, the internal Address Pointer automati-  
cally increments until the last byte of the burst is  
reached, then it wraps around to the first byte of the  
burst. All bursts are aligned to addresses within the  
burst length, see Table 5-3. For example, if the burst  
length is eight bytes, and the start address is 06h, the  
burst sequence would be: 06h, 07h, 00h, 01h, 02h,  
03h, 04h, 05h, 06h, etc. The pattern repeats until the  
command is terminated by a low-to-high transition on  
CE#.  
During RBSQI, the internal Address Pointer automati-  
cally increments until the last byte of the burst is  
reached, then it wraps around to the first byte of the  
burst. All bursts are aligned to addresses within the  
burst length, see Table 5-3. For example, if the burst  
length is eight bytes, and the start address is 06h, the  
burst sequence would be: 06h, 07h, 00h, 01h, 02h,  
03h, 04h, 05h, 06h, etc. The pattern repeats until the  
command is terminated by a low-to-high transition on  
CE#.  
During this operation, blocks that are read-locked will  
output data 00H.  
During this operation, blocks that are read-locked will  
output data 00H.  
TABLE 5-3:  
BURST ADDRESS RANGES  
Burst Length  
Burst Address Ranges  
8 Bytes  
16 Bytes  
32 Bytes  
64 Bytes  
00-07H, 08-0FH, 10-17H, 18-1FH...  
00-0FH, 10-1FH, 20-2FH, 30-3FH...  
00-1FH, 20-3FH, 40-5FH, 60-7FH...  
00-3FH, 40-7FH, 80-BFH, C0-FFH  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 22  
SST26VF040A  
Following the dummy byte, SST26VF040A outputs  
data from SIO[1:0] starting from the specified address  
location. The device continually streams data output  
through all addresses until terminated by a low-to-high  
transition on CE#. The internal Address Pointer  
automatically increments until the highest memory  
address is reached, at which point the Address Pointer  
returns to the beginning of the address space.  
5.12 SPI Dual Output Read  
The SPI Dual Output Read instruction supports  
frequencies of up to 104 MHz from 2.7V-3.6V and up to  
80 MHz from 2.3V-3.6V. Initiate SPI Dual Output Read  
by executing an 8-bit command, 3BH, followed by  
address bits A[23:0] and a dummy byte. CE# must  
remain active-low for the duration of the SPI Dual  
Output Read operation. See Figure 5-13 for the SPI  
Dual Output Read sequence.  
FIGURE 5-13:  
FAST READ, DUAL-OUTPUT SEQUENCE  
Note:  
MSB = Most Significant Bit  
When M[7:0] is any value other than AXH, the device  
expects the next instruction initiated to be a command  
instruction. To reset/exit the Set Mode configuration,  
execute the Reset Quad I/O command, FFH. See  
Figure 5-15 for the SPI Dual I/O Read sequence when  
M[7:0] = AXH.  
5.13 SPI Dual I/O Read  
The SPI Dual I/O Read (SDIOR) instruction supports up  
to 80 MHz frequency. Initiate SDIOR by executing an  
8-bit command, BBH. The device then switches to 2-bit  
I/O mode for address bits A[23:0], followed by the Set  
Mode Configuration bits M[7:0]. CE# must remain  
active-low for the duration of the SPI Dual I/O Read.  
See Figure 5-14 for the SPI Dual I/O Read sequence.  
Following the Set Mode Configuration bits, the  
SST26VF040A outputs data from the specified address  
location. The device continually streams data output  
through all addresses until terminated by a low-to-high  
transition on CE#. The internal Address Pointer  
automatically increments until the highest memory  
address is reached, at which point the Address Pointer  
returns to the beginning of the address space.  
The Set Mode Configuration bit M[7:0] indicates if the  
next instruction cycle is another SPI Dual I/O Read  
command. When M[7:0] = AXH, the device expects the  
next continuous instruction to be another SDIOR  
command, BBH, and does not require the opcode to be  
entered again. The host may set the next SDIOR cycle  
by driving CE# low, then sending the 2-bit wide input for  
address A[23:0], followed by the Set Mode  
Configuration bits M[7:0]. After the Set Mode  
Configuration bits, the device outputs the data starting  
from the specified address location. There are no  
restrictions on address location access.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 23  
SST26VF040A  
FIGURE 5-14:  
SPI DUAL I/O READ SEQUENCE  
CE#  
MODE 3  
MODE 0  
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16  
17  
18 19 20 21 22  
23  
SCK  
SIO0  
SIO1  
BBH  
6
7
4
5
2
3
0
1
6
7
4
5
2
3
0
1
6
7
4
2
3
0
1
6
7
4
5
5
A[23:16]  
A[15:8]  
A[7:0]  
M[7:0]  
CE#(cont’)  
SCK(cont’)  
23 2425 26 27 28 29 30 31 32 33 34 35 36 37 38  
I/O Switches from Input to Output  
39  
SIO0(cont’)  
SIO1(cont’)  
4
0
6
4
2
0
6
4
2
0
6
4
2
0
6
7
6
2
MSB  
MSB  
7
MSB  
7
MSB  
7
5
7
5
3
1
5
3
1
5
3
1
3
1
Byte 0  
Byte 1  
Byte 2  
Byte 3  
Note:  
MSB = Most Significant Bit  
FIGURE 5-15:  
BACK-TO-BACK SPI DUAL I/O READ SEQUENCES WHEN M[7:0] = AXH  
CE#  
SCK  
MODE 3  
8
0 1  
2
3
4 5  
6
7
9
10 11 12 13 14  
15  
MODE 0  
I/O Switch  
SIO0  
SIO1  
4
4
0
4
5
0
1
6
7
4
5
2
3
0
1
6
7
4
5
2
3
0
1
6
7
4
6
6
2
6
7
2
3
MSB  
MSB  
7
5
7
5
5
3
1
A[23:16]  
A[15:8]  
A[7:0]  
M[7:0]  
CE#(cont’)  
24  
15 16 17 18 19 20 21 22 23  
26 27 28 29 30  
31  
25  
SCK(cont’)  
SIO0(cont’)  
SIO1(cont’)  
I/O Switches from Input to Output  
4
2
0
6
4
2
0
6
4
2
3
0
1
6
4
5
2
3
0
6
7
6
MSB  
MSB  
7
MSB  
7
MSB  
7
7
5
3
1
5
3
1
5
1
Byte 0  
Byte 1  
Byte 2  
Byte 3  
Note:  
MSB = Most Significant Bit, LSB = Least Significant Bit  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 24  
SST26VF040A  
Immediately  
following  
the  
command  
cycle,  
5.14 JEDEC ID Read (SPI Protocol)  
SST26VF040A output data on the falling edge of the  
SCK signal. The data output stream is continuous until  
terminated by a low-to-high transition on CE#. The  
device outputs three bytes of data: manufacturer,  
device type, and device ID, see Table 5-4. See  
Figure 5-16 for instruction sequence.  
Using traditional SPI protocol, the JEDEC ID Read  
instruction identifies the device as SST26VF040A and  
the manufacturer as Microchip. To execute a JEDEC ID  
operation the host drives CE# low then sends the  
JEDEC ID command cycle (9FH).  
TABLE 5-4:  
Product  
SST26VF040A  
FIGURE 5-16:  
DEVICE ID DATA OUTPUT  
Device ID  
Manufacturer ID (Byte 1)  
Device Type (Byte 2)  
Device ID (Byte 3)  
BFH  
26H  
14H  
JEDEC ID SEQUENCE (SPI)  
CE#  
MODE 3  
MODE 0  
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34  
SCK  
SI  
9F  
High-Impedance  
26  
Device ID  
BF  
SO  
MSB  
MSB  
Immediately following the command cycle and one  
dummy cycle, SST26VF040A outputs data on the  
falling edge of the SCK signal. The data output stream  
5.15 Read Quad J-ID Read (SQI  
Protocol)  
The Read Quad J-ID Read instruction identifies the  
device as SST26VF040A and manufacturer as  
Microchip. To execute a Quad J-ID operation the host  
drives CE# low and then sends the Quad J-ID  
command cycle (AFH). Each cycle is two nibbles  
(clocks) long, Most Significant nibble first.  
is continuous until terminated by  
a low-to-high  
transition of CE#. The device outputs three bytes of  
data: manufacturer, device type, and device ID, see  
Table 5-4. See Figure 5-17 for instruction sequence.  
FIGURE 5-17:  
QUAD J-ID READ SEQUENCE  
CE#  
N
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
MODE 3  
SCK  
MODE 0  
MSN  
LSN  
C0 C1  
X
X
H0 L0  
BFH  
L1  
H0 L0 H1 L1  
BFH  
26H  
HN LN  
N
H2 L2  
SIO[3:0]  
H1  
26H  
Dummy  
Device ID  
Note:  
MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = AFH  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 25  
SST26VF040A  
Initiate SFDP by executing an 8-bit command, 5AH,  
followed by address bits A[23:0] and a dummy byte.  
CE# must remain active-low for the duration of the  
SFDP cycle. For the SFDP sequence, see Figure 5-18.  
5.16 Serial Flash Discoverable  
Parameters (SFDP)  
The Serial Flash Discoverable Parameters (SFDP)  
contain information describing the characteristics of the  
device. This allows device-independent, JEDEC  
ID-independent, and forward/backward-compatible  
software support for all future Serial Flash device  
families. See Table 11-1 for address and data values.  
FIGURE 5-18:  
SERIAL FLASH DISCOVERABLE PARAMETERS SEQUENCE  
CE#  
MODE 3  
0
1 2 3 4 5 6 7 8  
15 16  
23 24  
31 32  
39 40  
47 48  
55 56  
63 64  
71 72  
80  
SCK  
MODE 0  
5A  
ADD.  
ADD.  
ADD.  
X
SI  
N
OUT  
N+1  
N+2  
N+3  
D
OUT  
N+4  
D
OUT  
High-Impedance  
SO  
D
D
D
OUT  
OUT  
MSB  
To execute a Sector Erase operation, the host drives  
CE# low, then sends the Sector Erase command cycle  
(20H) and three address cycles, and then drives CE#  
high. Address bits [AMS:A12] (AMS = Most Significant  
Address) determine the sector address (SAX); the  
remaining address bits can be VIL or VIH. To identify the  
completion of the internal, self-timed, write operation,  
poll the BUSY bit in the STATUS register, or wait TSE.  
See Figures 5-19 and 5-20 for the Sector Erase  
sequence.  
5.17 Sector Erase  
The Sector Erase instruction clears all bits in the  
selected 4-KByte sector to ‘1’, but it does not change a  
protected memory area. Prior to any write operation,  
the Write Enable (WREN) instruction must be executed.  
FIGURE 5-19:  
4-KBYTE SECTOR ERASE SEQUENCE – SQI MODE  
CE#  
MODE 3  
MODE 0  
0
1
2
4
6
SCK  
SIO[3:0]  
C1 C0 A5 A4 A3 A2 A1 A0  
MSN LSN  
Note:  
MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = 20H  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 26  
SST26VF040A  
FIGURE 5-20:  
4-KBYTE SECTOR ERASE SEQUENCE (SPI)  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
8
15 16  
23  
31  
24  
MODE 0  
SCK  
20  
ADD.  
MSB  
ADD.  
ADD.  
SI  
MSB  
High-Impedance  
SO  
The 64-Kbyte Block Erase instruction is initiated by  
executing an 8-bit command D8H, followed by address  
bits [A23:A0]. Address bits [AMS:A16] (AMS = Most  
Significant Address) are used to determine block  
address (BAX), remaining address bits can be VIL or  
VIH. CE# must be driven high before the instruction is  
executed. The user may poll the BUSY bit in the  
software STATUS register or wait TBE for the  
completion of the internal self-timed 32-Kbyte Block  
Erase or 64-Kbyte Block Erase cycles. See  
Figures 5-21 and 5-22 for the 32-Kbyte Block Erase  
sequence and Figures 5-23 and 5-24 for the 64-Kbyte  
Block Erase sequence.  
5.18 32-Kbyte Block Erase and  
64-Kbyte Block Erase  
The 32-Kbyte Block Erase instruction clears all bits in  
the selected 32-Kbyte block to FFH. The 64-Kbyte  
Block Erase instruction clears all bits in the selected  
64-Kbyte block to FFH. A 32-Kbyte Block Erase or  
64-Kbyte Block Erase instruction applied to a protected  
memory area will be ignored. Prior to any block erase  
operation, the Write Enable (WREN) instruction must be  
executed. CE# must remain active-low for the duration  
of any command sequence. The 32-Kbyte Block Erase  
instruction is initiated by executing an 8-bit command  
52H, followed by address bits [A23:A0]. Address bits  
[AMS:A15] (AMS = Most Significant Address) are used  
to determine block address (BAX), remaining address  
bits can be VIL or VIH. CE# must be driven high before  
the instruction is executed.  
FIGURE 5-21:  
32-KBYTE BLOCK-ERASE SEQUENCE (SQI)  
CE#  
SCK  
MODE 3  
MODE 0  
0
1
2
4
6
SIO[3:0]  
C1 C0 A5 A4 A3 A2 A1 A0  
MSN LSN  
Note:  
MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = 52H  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 27  
SST26VF040A  
FIGURE 5-22:  
32-KBYTE BLOCK-ERASE SEQUENCE (SPI)  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
8
15 16  
23  
31  
24  
MODE 0  
SCK  
52  
ADDR  
MSB  
ADDR  
ADDR  
SI  
MSB  
High-Impedance  
SO  
FIGURE 5-23:  
64-KBYTE BLOCK-ERASE SEQUENCE (SQI)  
CE#  
MODE 3  
MODE 0  
0
1
2
4
6
SCK  
SIO[3:0]  
C1 C0 A5 A4 A3 A2 A1 A0  
MSN  
LSN  
Note:  
MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = D8H  
FIGURE 5-24:  
64-KBYTE BLOCK-ERASE SEQUENCE (SPI)  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
8
15 16  
23  
31  
24  
MODE 0  
SCK  
D8  
ADDR  
MSB  
ADDR  
ADDR  
SI  
MSB  
High-Impedance  
SO  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 28  
SST26VF040A  
To execute a Chip Erase operation, the host drives CE#  
low, sends the Chip Erase command cycle (C7H or  
60H), then drives CE# high. Poll the BUSY bit in the  
5.19 Chip Erase  
The Chip Erase instruction clears all bits in the device  
to ‘1’. The Chip Erase instruction is ignored if any of the  
memory area is protected. Prior to any write operation,  
execute the WRENinstruction.  
STATUS register, or wait TSCE for the completion of the  
,
internal, self-timed, write operation. See Figures 5-25  
and 5-26 for the Chip Erase sequence.  
FIGURE 5-25:  
CHIP ERASE SEQUENCE (SQI)  
CE#  
MODE 3  
0
1
SCK  
MODE 0  
SIO[3:0]  
C1 C0  
Note:  
C[1:0] = C7H  
FIGURE 5-26:  
CHIP ERASE SEQUENCE (SPI)  
CE#  
MODE 3  
0
1 2 3 4 5 6 7  
SCK  
MODE 0  
C7  
High-Impedance  
SI  
MSB  
SO  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 29  
SST26VF040A  
When executing Page Program, the memory range for  
the SST26VF040A is divided into 256-byte page  
boundaries. The device handles shifting of more than  
256 bytes of data by maintaining the last 256 bytes of  
data as the correct data to be programmed. If the target  
address for the Page Program instruction is not the  
beginning of the page boundary (A[7:0] are not all  
zero), and the number of bytes of data input exceeds or  
overlaps the end of the address of the page boundary,  
the excess data inputs wrap-around and will be  
programmed at the start of that target page.  
5.20 Page Program  
The Page Program instruction programs up to  
256 bytes of data in the memory, and supports both SPI  
and SQI protocols. The data for the selected page  
address must be in the erased state (FFH) before  
initiating the Page Program operation. A Page Program  
applied to a protected memory area will be ignored.  
Prior to the program operation, execute the WREN  
instruction.  
To execute a Page Program operation, the host drives  
CE# low then sends the Page Program command cycle  
(02H), three address cycles followed by the data to be  
programmed, then drives CE# high. The programmed  
data must be between 1 to 256 bytes and in whole-byte  
increments; sending less than a full byte will cause the  
partial byte to be ignored. Poll the BUSY bit in the  
STATUS register, or wait TPP for the completion of the  
internal, self-timed, write operation. See Figures 5-27  
and 5-28 for the Page Program sequence.  
FIGURE 5-27:  
PAGE-PROGRAM SEQUENCE (SQI)  
CE#  
MODE 3  
0
2
4
6
8
10  
12  
SCK  
MODE 0  
SIO[3:0]  
C1 C0 A5 A4 A3 A2 A1 A0 H0 L0 H1 L1 H2 L2  
HN LN  
MSN LSN  
Data Byte 0  
Data Byte 1 Data Byte 2  
Data Byte 255  
Note:  
MSN = Most Significant Nibble, LSN = Least Significant Nibble  
FIGURE 5-28:  
PAGE-PROGRAM SEQUENCE (SPI)  
CE#  
MODE 3  
MODE 0  
0
1
2
3
4
5
6
7
8
15 16  
23 24  
31 32  
39  
SCK  
SI  
02  
ADD.  
MSB  
ADD.  
ADD.  
LSB  
Data Byte 0  
LSB  
MSB  
MSB  
LSB  
SO  
High-Impedance  
CE#(cont’)  
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55  
SCK(cont’)  
SI(cont’)  
Data Byte 255  
Data Byte 1  
Data Byte 2  
MSB  
MSB  
MSB  
LSB  
LSB  
LSB  
SO(cont’)  
High-Impedance  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 30  
SST26VF040A  
When executing SPI Quad Page Program, the memory  
range for the SST26VF040A is divided into 256-byte  
page boundaries. The device handles shifting of more  
than 256 bytes of data by maintaining the last  
256 bytes of data as the correct data to be  
programmed. If the target address for the SPI Quad  
Page Program instruction is not the beginning of the  
page boundary (A[7:0] are not all zero), and the of  
bytes of data input exceeds or overlaps the end of the  
address of the page boundary, the excess data inputs  
wrap-around and will be programmed at the start of that  
target page.  
5.21 SPI Quad Page Program  
The SPI Quad Page Program instruction programs up  
to 256 bytes of data in the memory. The data for the  
selected page address must be in the erased state  
(FFH) before initiating the SPI Quad Page Program  
operation. A SPI Quad Page Program applied to a  
protected memory area will be ignored. SST26VF040A  
requires the ICO bit in the Configuration register to be  
set to ‘1’ prior to executing the command. Prior to the  
program operation, execute the WRENinstruction.  
To execute a SPI Quad Page Program operation, the  
host drives CE# low then sends the SPI Quad Page  
Program command cycle (32H), three address cycles  
followed by the data to be programmed, then drives  
CE# high. The programmed data must be between 1 to  
256 bytes and in whole-byte increments. The com-  
mand cycle is eight clocks long, the address and data  
cycles are each two clocks long, Most Significant bit  
first. Poll the BUSY bit in the STATUS register, or wait  
TPP for the completion of the internal, self-timed, write  
operation. See Figure 5-29.  
FIGURE 5-29:  
SPI QUAD PAGE-PROGRAM SEQUENCE  
CE#  
MODE 3  
MODE 0  
16  
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15  
0
17  
SCK  
SIO0  
SIO1  
32H  
A20A16A12 A8  
A4 A0 b4 b0 b4 b0  
b4 b0  
b5 b1  
b6 b2  
b7 b3  
A13  
b5 b1  
A21 A17  
A9  
A5 A1 b5 b1  
b6 b2  
A22 A18A14A10  
A6 A2 b6 b2  
SIO2  
SIO3  
MSN LSN  
b7 b3  
A23 A19 A15 A11  
A7 A3 b7 b3  
Data Data  
Data  
Byte  
255  
Address  
Byte 0 Byte 1  
The Write Resume command is ignored until any write  
operation (Program or Erase) initiated during the Write  
Suspend is complete. The device requires a minimum  
of 500 µs between each Write Suspend command.  
5.22 Write Suspend and Write Resume  
Write Suspend allows the interruption of Sector Erase,  
32-Kbyte Block Erase, 64-Kbyte Block Erase, SPI  
Quad Page Program, or Page Program operations in  
order to erase, program or read data in another portion  
of memory. The original operation can be continued  
with the Write Resume command. This operation is  
supported in both SQI and SPI protocols.  
Only one write operation can be suspended at a time;  
if an operation is already suspended, the device will  
ignore the Write Suspend command. Write Suspend  
during Chip Erase is ignored; Chip Erase is not a valid  
command while a write is suspended.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 31  
SST26VF040A  
5.23 Write Suspend During Sector  
Erase or Block Erase  
5.26 Read Security ID  
The Read Security ID operation is supported in both  
SPI and SQI modes. To execute a Read Security ID  
(SID) operation in SPI mode, the host drives CE# low,  
sends the Read Security ID command cycle (88H), two  
address cycles, and then one dummy cycle. To execute  
a Read Security ID operation in SQI mode, the host  
drives CE# low and then sends the Read Security ID  
command, two address cycles, and three dummy  
cycles.  
Issuing a Write Suspend instruction during Sector  
Erase or 32-Kbyte Block Erase or 64-Kbyte Block  
Erase allows the host to program or read any sector  
that was not being erased. The device will ignore any  
programming commands pointing to the suspended  
sector(s). Any attempt to read from the suspended sec-  
tor(s) will output unknown data because the Sector or  
32-Kbyte Block Erase or 64-Kbyte Block Erase will be  
incomplete.  
After the dummy cycles, the device outputs data on the  
falling edge of the SCK signal, starting from the speci-  
fied address location. The data output stream is contin-  
uous through all SID addresses until terminated by a  
low-to-high transition on CE#. See Table 5-5 for the  
Security ID address range.  
To execute a Write Suspend operation, the host drives  
CE# low, sends the Write Suspend command cycle  
(B0H), then drives CE# high. The Configuration  
register indicates that the erase has been suspended  
by changing the WSE bit from ‘0’ to ‘1’, but the device  
will not accept another command until it is ready. To  
determine when the device will accept  
command, poll the BUSY bit in the STATUS register or  
wait TWS.  
a new  
5.27 Program Security ID  
The Program Security ID instruction programs one to  
2032 bytes of data in the user-programmable, Security  
ID space. This Security ID space is one-time-program-  
mable (OTP). The device ignores a Program Security  
ID instruction pointing to an invalid or protected  
address, see Table 5-5. Prior to the program operation,  
execute WREN.  
5.24 Write Suspend During Page  
Programming or SPI Quad Page  
Programming  
Issuing a Write Suspend instruction during Page  
Programming allows the host to erase or read any  
sector that is not being programmed. Erase commands  
pointing to the suspended sector(s) will be ignored. Any  
attempt to read from the suspended page will output  
unknown data because the program will be incomplete.  
To execute a Program SID operation, the host drives  
CE# low, sends the Program Security ID command  
cycle (A5H), two address cycles, the data to be pro-  
grammed, then drives CE# high. The programmed data  
must be between 1 to 256 bytes and in whole-byte  
increments.  
To execute a Write Suspend operation, the host drives  
CE# low, sends the Write Suspend command cycle  
(B0H), then drives CE# high. The Configuration regis-  
ter indicates that the programming has been sus-  
pended by changing the WSP bit from ‘0’ to ‘1’, but the  
device will not accept another command until it is ready.  
To determine when the device will accept a new com-  
mand, poll the BUSY bit in the STATUS register or wait  
TWS.  
The device handles shifting of more than 256 bytes of  
data by maintaining the last 256 bytes of data as the  
correct data to be programmed. If the target address for  
the Program Security ID instruction is not the beginning  
of the page boundary, and the number of data input  
exceeds or overlaps the end of the address of the page  
boundary, the excess data inputs wrap-around and will  
be programmed at the start of that target page.  
The Program Security ID operation is supported in both  
SPI and SQI mode. To determine the completion of the  
internal, self-timed Program SID operation, poll the  
BUSY bit in the software STATUS register, or wait  
TPSID for the completion of the internal self-timed  
Program Security ID operation.  
5.25 Write Resume  
Write Resume restarts a write command that was sus-  
pended, and changes the suspend Status bit in the  
Configuration register (WSE or WSP) back to ‘0’.  
To execute a Write Resume operation, the host drives  
CE# low, sends the Write Resume command cycle  
(30H), then drives CE# high. To determine if the inter-  
nal, self-timed write operation is completed, poll the  
BUSY bit in the STATUS register, or wait the specified  
time TSE, TBE or TPP for Sector-Erase, Block-Erase, or  
Page-Programming, respectively. The total write time  
before suspend and after resume will not exceed the  
uninterrupted write times TSE, TBE or TPP.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 32  
SST26VF040A  
TABLE 5-5:  
PROGRAM SECURITY ID  
Program Security ID  
Address Range  
Unique ID Preprogrammed at Factory  
User-Programmable  
0000-000FH  
0010H-07FFH  
These commands function in both SPI and SQI modes.  
The STATUS register may be read at any time, even  
during a write operation. When a write is in progress,  
poll the BUSY bit before sending any new commands  
to assure that the new commands are properly  
received by the device.  
5.28 Lockout Security ID  
The Lockout Security ID instruction prevents any future  
changes to the Security ID, and is supported in both  
SPI and SQI modes. Prior to the operation, execute  
WREN.  
To execute a Lockout SID, the host drives CE# low,  
sends the Lockout Security ID command cycle (85H),  
then drives CE# high. Poll the BUSY bit in the software  
STATUS register, or wait TPSID for the completion of the  
Lockout Security ID operation.  
To read the STATUS or Configuration registers, the  
host drives CE# low, then sends the Read STATUS  
Register command cycle (05H) or the Read Configura-  
tion Register command (35H). A dummy cycle is  
required in SQI mode. Immediately after the command  
cycle, the device outputs data on the falling edge of the  
SCK signal. The data output stream continues until ter-  
minated by a low-to-high transition on CE#. See  
Figures 5-30 and 5-31 for the instruction sequence.  
5.29 Read STATUS Register (RDSR)  
and Read Configuration Register  
(RDCR)  
The Read STATUS Register (RDSR) and Read Config-  
uration Register (RDCR) commands output the con-  
tents of the STATUS and Configuration registers.  
FIGURE 5-30:  
READ STATUS REGISTER AND READ CONFIGURATION REGISTER SEQUENCE  
(SQI)  
CE#  
MODE 3  
0
2
4
6
8
SCK MODE 0  
MSN LSN  
SIO[3:0]  
C1 C0  
X
X
H0 L0 H0 L0  
H0 L0  
Dummy STATUS ByteSTATUS Byte  
STATUS Byte  
Note:  
MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = 05H or 35H  
FIGURE 5-31:  
READ STATUS REGISTER AND READ CONFIGURATION REGISTER SEQUENCE  
(SPI)  
CE#  
MODE 3  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
SCK  
MODE 0  
05 or 35H  
High-Impedance  
SI  
MSB  
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0  
SO  
MSB  
STATUS or Configuration  
Register Out  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 33  
SST26VF040A  
5.30 Write STATUS Register (WRSR)  
The Write STATUS Register (WRSR) command writes  
new values to the STATUS register and Configuration  
register. To execute a Write STATUS Register opera-  
tion, the host drives CE# low, then sends the Write  
STATUS Register command cycle (01H), and one or  
two cycles of data, and then drives CE# high. The first  
cycle of data points to the STATUS register, the second  
points to the Configuration register. See Figures 5-32  
and 5-33.  
FIGURE 5-32:  
WRITE STATUS REGISTER SEQUENCE (SQI)  
CE#  
SCK  
3
MODE 3  
MODE 0  
0
1
2
4
5
MSN LSN  
SIO[3:0]  
C1 C0 H0 L0 H0 L0  
STATUS Configura-  
Command  
Byte  
tion  
Byte  
Note:  
MSN = Most Significant Nibble; LSN = Least Significant Nibble, XX = “Don’t Care”, C[1:0] = 01H  
FIGURE 5-33:  
WRITE STATUS REGISTER SEQUENCE (SPI)  
CE#  
0
1
2
3
4
5
6
7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23  
MODE 3  
MODE 3  
MODE 0  
MODE 0  
SCK  
STATUS  
Register  
Configuration  
Register  
06  
01  
7 6 5 4  
MSB  
3
2
1 0 7 6 5 4  
3 2 1 0  
SI  
MSB  
MSB  
High-Impedance  
MSB  
SO  
Note:  
XX = “Don’t Care”  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 34  
SST26VF040A  
5.31 Write Enable (WREN)  
The Write Enable (WREN) instruction sets the Write  
Enable Latch bit in the STATUS register to ‘1’, allowing  
write operations to occur. The WRENinstruction must be  
executed prior to any of the following operations:  
Sector Erase, 32-Kbyte Block Erase or 64-Kbyte Block  
Erase, Chip Erase, Page Program, Program Security  
ID, Lockout Security ID, Lock-Down Protection  
Settings, SPI Quad Page program, and Write STATUS  
register. To execute a Write Enable the host drives CE#  
low then sends the Write Enable command cycle (06H)  
then drives CE# high. See Figures 5-34 and 5-35 for  
the WRENinstruction sequence.  
FIGURE 5-34:  
WRITE ENABLE SEQUENCE (SQI)  
CE#  
MODE 3  
MODE 0  
0
1
SCK  
SIO[3:0]  
0
6
FIGURE 5-35:  
WRITE ENABLE SEQUENCE (SPI)  
CE#  
MODE 3  
0
1 2 3 4 5 6 7  
SCK  
MODE 0  
06  
High-Impedance  
SI  
MSB  
SO  
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DS20006292B-page 35  
SST26VF040A  
5.32 Write Disable (WRDI)  
The Write Disable (WRDI) instruction sets the Write  
Enable Latch bit in the STATUS register to ‘0’, prevent-  
ing write operations. The WRDI instruction is ignored  
during any internal write operations. Any write opera-  
tion started before executing WRDI will complete. Drive  
CE# high before executing WRDI.  
To execute a Write Disable, the host drives CE# low,  
sends the Write Disable command cycle (04H), then  
drives CE# high. See Figures 5-36 and 5-37.  
FIGURE 5-36:  
WRITE DISABLE (WRDI) SEQUENCE (SQI)  
CE#  
SCK  
MODE 3  
MODE 0  
0
1
SIO[3:0]  
0
4
FIGURE 5-37:  
WRITE DISABLE (WRDI) SEQUENCE (SPI)  
CE#  
MODE 3  
0
1
2
3
4 5 6 7  
SCK  
MODE 0  
04  
SI  
MSB  
High-Impedance  
SO  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 36  
SST26VF040A  
5.33 Lock-Down Protection Settings  
(LDPS)  
The Lock-Down Protection Settings instruction  
prevents changes to the Block Protection bits (BP0,  
BP1, BP2, BP3) of the STATUS register during device  
operation. Lock-Down resets after power cycling or  
hardware Reset; this allows the Block Protection  
settings to be changed. Execute WREN before  
initiating the Lock-Down Protection Settings  
instruction. To execute  
a Lock-Down Protection  
Settings command, the host drives CE# low, then  
sends the Lock-Down Protection Settings command  
cycle (8DH), then drive CE# high. Executing the LDPS  
instruction will set the VLP bit in the Configuration  
register.  
FIGURE 5-38:  
LOCK-DOWN PROTECTION SETTINGS (SQI)  
CE#  
SCK  
MODE 3  
MODE 0  
0
1
SIO[3:0]  
C1 C0  
Note:  
C[1:0] = 8DH  
FIGURE 5-39:  
LOCK-DOWN PROTECTION SETTINGS (SPI)  
CE#  
SCK  
SIO0  
MODE 3  
MODE 0  
0
1
2
3
4
5
6
7
8D  
SIO[3:1]  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 37  
SST26VF040A  
Enter Deep Power-Down mode by initiating the Deep  
Power-Down (DPD) instruction (B9H) while driving CE#  
low. CE# must be driven high before executing the DPD  
instruction. After CE# is driven high, it requires a delay  
of TDPD before the standby current ISB is reduced to  
deep power-down current IDPD. See Table 5-6 for Deep  
Power-Down timing. If the device is busy performing an  
internal erase or program operation, initiating a Deep  
Power-Down instruction will not place the device in  
Deep Power-Down mode. See Figures 5-40 and 5-41  
for the DPDinstruction sequence.  
5.34 Deep Power-Down  
The Deep Power-Down (DPD) instruction puts the  
device in the lowest power consumption mode – the  
Deep Power-Down mode. The Deep Power-Down  
instruction is ignored during an internal write operation.  
While the device is in Deep Power-Down mode, all  
instructions will be ignored except for the Release  
Deep Power-Down instruction.  
TABLE 5-6:  
Symbol  
TDPD  
DEEP POWER-DOWN  
Parameter  
Min.  
Max.  
3
Units  
µs  
CE# High to Deep Power-Down  
CE# High to Standby Mode  
TSBR  
10  
µs  
FIGURE 5-40:  
DEEP POWER-DOWN (DPD) SEQUENCE – SQI MODE  
T
CE#  
SCK  
DPD  
MODE 3  
MODE 0  
1
0
B
MSN  
9
LSN  
SIO[3:0]  
Standby Mode Deep Power-Down Mode  
Note:  
MSN = Most Significant Nibble; LSN = Least Significant Nibble  
FIGURE 5-41:  
DEEP POWER-DOWN (DPD) SEQUENCE – SPI MODE  
CE#  
T
DPD  
MODE 3  
MODE 0  
0
1
2
3
4 5 6 7  
SCK  
B9  
SI  
MSB  
High-Impedance  
SO  
Standby Mode Deep Power-Down Mode  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 38  
SST26VF040A  
To execute RDPD and read the Device ID, the host  
drives CE# low then sends the Deep Power-Down  
command cycle (ABH), three dummy clock cycles, and  
then drives CE# high. The device outputs the Device ID  
on the falling edge of the SCK signal following the  
dummy cycles. The data output stream is continuous  
until terminated by a low-to-high transition on CE, and  
will return to Standby mode and be ready for the next  
instruction after TSBR. See Figures 5-42 and 5-43 for  
the command sequence.  
5.35 Release from Deep Power-Down  
and Read ID  
Release from Deep Power-Down (RDPD) and Read ID  
instruction exits Deep Power-Down mode. To exit Deep  
Power-Down mode, execute the RDPD. During this  
command, the host drives CE# low, then sends the  
Deep Power-Down command cycle (ABH), and then  
drives CE# high. The device will return to Standby  
mode and be ready for the next instruction after TSBR.  
FIGURE 5-42:  
RELEASE FROM DEEP POWER-DOWN (RDPD) AND READ ID SEQUENCE – SQI MODE  
T
SBR  
CE#  
MODE 3  
0
1
SCK MODE 0  
Op Code  
C1 C0  
MSN LSN  
X
X
X
X
X
X
D1 D0  
Device ID  
SIO[3:0]  
Standby Mode  
Deep Power-Down Mode  
Note:  
C[1:0] = ABH  
FIGURE 5-43:  
RELEASE FROM DEEP POWER-DOWN (RDPD) AND READ ID SEQUENCE – SPI MODE  
T
SBR  
CE#  
MODE 3  
1
2
3
4
5
6
15 16  
23 24  
32 33  
0
7
8
40  
SCK MODE 0  
Op Code  
AB  
XX  
XX  
XX  
SIO[3:0]  
Device ID  
Standby Mode  
Deep Power-Down Mode  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 39  
SST26VF040A  
6.0  
ELECTRICAL SPECIFICATIONS  
Absolute Maximum Ratings (†)  
Temperature under bias..........................................................................................................................-55°C to +125°C  
Storage temperature...............................................................................................................................-65°C to +150°C  
DC voltage on any pin to ground potential...........................................................................................-0.5V to VDD+0.5V  
Transient voltage (<20 ns) on any pin to ground potential...................................................................-2.0V to VDD+2.0V  
Package power dissipation capability (TA = 25°C)....................................................................................................1.0W  
Surface mount solder reflow temperature.......................................................................................260°C for 10 seconds  
Output short circuit current(1) ..................................................................................................................................50 mA  
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above those  
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for  
extended periods may affect device reliability.  
Note 1: Output shorted for no more than one second. No more than one output shorted at a time.  
TABLE 6-1:  
OPERATING RANGE  
6.1  
Power-Up Specifications  
Range  
Ambient Temp.  
-40°C to +85°C  
-40°C to +125°C  
VDD  
All functionalities and DC specifications are specified  
for a VDD ramp rate of greater than 1V per 100 ms  
(0V to 3.0V in less than 300 ms). See Table 6-3 and  
Figure 6-1 for more information.  
Industrial  
Extended(1)  
2.3V-3.6V  
Note 1: Maximum operating frequency for  
Extended temperature is 80 MHz.  
When VDD drops from the operating voltage to below  
the minimum VDD threshold at power-down, all opera-  
tions are disabled and the device does not respond to  
commands. Data corruption may result if a power-down  
occurs while a write registers, program, or erase oper-  
ation is in progress. See Figure 6-2.  
(1)  
TABLE 6-2:  
AC CONDITIONS OF TEST  
Input Rise/Fall Time  
3 ns  
Output Load  
CL = 30 pF  
Note 1: See Figure 8-6.  
TABLE 6-3:  
Symbol  
RECOMMENDED SYSTEM POWER-UP/POWER-DOWN TIMINGS  
Parameter  
Minimum  
Maximum  
Units  
Condition  
(1)  
TPU-READ  
VDD Minimum to Read Operation  
VDD Minimum to Write Operation  
Power-Down Duration  
VDD Off  
100  
100  
100  
µs  
µs  
ms  
V
(1)  
TPU-WRITE  
(1)  
TPD  
VOFF  
0.3  
0V recommended  
Note 1: This parameter is measured only for initial qualification and after a design or process change that could  
affect this parameter.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 40  
SST26VF040A  
FIGURE 6-1:  
VDD  
POWER-UP TIMING DIAGRAM  
VDD Max  
Chip selection is not allowed.  
Commands may not be accepted or properly  
interpreted by the device.  
VDD Min  
TPU-READ  
TPU-WRITE  
Device fully accessible  
Time  
FIGURE 6-2:  
POWER-DOWN AND VOLTAGE DROP DIAGRAM  
VDD  
VDD Max  
No Device Access Allowed  
VDD Min  
TPU  
Device  
Access  
Allowed  
VOFF  
TPD  
Time  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 41  
SST26VF040A  
7.0  
DC CHARACTERISTICS  
TABLE 7-1:  
DC OPERATING CHARACTERISTICS (VDD = 2.3V-3.6V)  
Limits  
Symbol  
Parameter  
Min.  
Typical Max.  
Unit  
Test Conditions  
IDDR1  
IDDR2  
Read Current  
8
15  
mA  
VDD = VDD Max,  
CE# = 0.1 VDD/0.9 VDD@40 MHz,  
SO = Open  
Read Current  
20  
mA  
VDD = VDD Max,  
CE# = 0.1 VDD/0.9 VDD@104 MHz,  
SO = Open  
IDDW  
ISB1  
ISB2  
IDPD1  
IDPD2  
ILI  
Program and Erase Current  
Standby Current  
15  
8
25  
30  
50  
20  
30  
2
mA  
µA  
µA  
µA  
µA  
µA  
µA  
V
VDD Max  
CE# =VDD, VIN=VDD or VSS  
CE# =VDD, VIN=VDD or VSS at 125°C  
CE# = VDD, VIN=VDD or VSS  
CE# = VDD, VIN=VDD or VSS at 125°C  
VIN = GND to VDD, VDD=VDD Max  
VOUT = GND to VDD, VDD = VDD Max  
VDD = VDD Min  
Standby Curent  
Deep Power-Down Current  
Deep Power-Down Current  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
ILO  
2
VIL  
0.8  
0.2  
VIH  
Input High Voltage  
0.7 VDD  
V
VDD = VDD Max  
VOL  
VOH  
Output Low Voltage  
Output High Voltage  
V
IOL = 100 µA, VDD = VDD Min  
IOH = -100 µA, VDD = VDD Min  
VDD-0.2  
V
TABLE 7-2:  
Capacitance (TA = 25°C, f = 1 MHz, Other Pins Open)  
Parameter  
Description  
Test Condition  
Maximum  
(1)  
COUT  
Output Pin Capacitance  
Input Capacitance  
VOUT = 0V  
VIN = 0V  
8 pF  
6 pF  
(1)  
CIN  
Note 1: This parameter is measured only for initial qualification and after a design or process change that could  
affect this parameter.  
TABLE 7-3:  
RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Minimum Specification  
Unit  
Test Method  
(1)  
NEND  
Endurance  
100,000  
100  
Cycles  
Years  
mA  
JEDEC Standard A117 and AEC-Q100-005  
JEDEC Standard A103 and AEC-Q100-005  
JEDEC Standard 78 and AEC-Q100-004  
(1)  
TDR  
ILTH  
Data Retention  
Latch Up  
(1)  
100 + IDD  
Note 1: This parameter is measured only for initial qualification and after a design or process change that could  
affect this parameter.  
TABLE 7-4:  
Symbol  
WRITE TIMING PARAMETERS (VDD = 2.3V-3.6V)  
Parameter Minimum  
Maximum  
Unit  
TSE  
Sector Erase  
Block Erase  
25  
25  
50  
1.5  
1.5  
25  
25  
ms  
ms  
ms  
ms  
ms  
µs  
TBE  
TSCE  
Chip Erase  
(1)  
TPP  
Page Program  
Program Security ID  
TPSID  
TWS  
Write Suspend Latency  
TCONFIG  
Configuration Register Write Latency  
ms  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 42  
SST26VF040A  
TABLE 7-4:  
Symbol  
WRITE TIMING PARAMETERS (VDD = 2.3V-3.6V) (CONTINUED)  
Parameter Minimum Maximum  
Unit  
Note 1: Estimate for typical conditions less than 256 bytes: Programming Time (µs) = 55 + (3.75 x # of bytes).  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 43  
SST26VF040A  
8.0  
AC CHARACTERISTICS  
(1)  
TABLE 8-1:  
Symbol  
AC OPERATING CHARACTERISTICS (VDD = 2.3V-3.6V)  
Limits - 40 MHz Limits - 80 MHz(2) Limits - 104 MHz  
Parameter  
Units  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
FCLK  
Serial Clock Frequency  
Serial Clock Period  
11  
11  
0.1  
0.1  
8
40  
25  
19  
8
5.5  
5.5  
0.1  
0.1  
5
80  
12.5  
4.5  
4.5  
0.1  
0.1  
5
104  
9.6  
12  
8
MHz  
ns  
TCLK  
TSCKH  
TSCKL  
TSCKR  
Serial Clock High Time  
Serial Clock Low Time  
ns  
ns  
(3)  
Serial Clock Rise Time (slew rate)  
Serial Clock Fall Time (slew rate)  
CE# Active Setup Time  
CE# Active Hold Time  
V/ns  
V/ns  
ns  
(3)  
TSCKF  
(4)  
TCES  
TCEH  
TCHS  
TCHH  
TCPH  
TCHZ  
TCLZ  
THLS  
THHS  
THLH  
THHH  
THZ  
(4)  
8
5
5
ns  
(4)  
(4)  
CE# Not Active Setup Time  
CE# Not Active Hold Time  
CE# High Time  
8
5
5
ns  
8
5
5
ns  
25  
0
12.5  
0
12  
0
ns  
CE# High-to-High Z Output  
SCK Low-to-Low Z Output  
HOLD# Low Setup Time  
HOLD# High Setup Time  
HOLD# Low Hold Time  
HOLD# High Hold Time  
HOLD# Low-to-High Z Output  
HOLD# High-to-Low Z Output  
Data In Setup Time  
12.5  
ns  
ns  
8
5
5
ns  
8
5
5
ns  
8
5
5
ns  
8
5
5
ns  
3
3
8
3
ns  
TLZ  
8
8
8
ns  
TDS  
8/5(5)  
8/5(5)  
ns  
TDH  
Data In Hold Time  
4
4
4
ns  
TOH  
Output Hold from SCK Change  
Output Valid from SCK  
0
0
0
ns  
TV  
8/5(5)  
ns  
Note 1: Maximum operating frequency for 2.7V-3.6V is 104 MHz and for 2.3V-3.6V is 80 MHz.  
2: Maximum frequency for 125°C is 80 MHz.  
3: Maximum Rise and Fall time may be limited by TSCKH and TSCKL requirements.  
4: Relative to SCK.  
5: 30 pF/10 pF  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 44  
SST26VF040A  
FIGURE 8-1:  
HOLD TIMING DIAGRAM  
CE#  
T
T
T
HLS  
HHS  
HHH  
SCK  
T
HLH  
T
HZ  
T
LZ  
SO  
SI  
HOLD#  
FIGURE 8-2:  
SERIAL INPUT TIMING DIAGRAM  
T
CPH  
CE#  
T
CHH  
T
CEH  
T
CES  
T
CHS  
T
SCKF  
SCK  
T
T
DH  
DS  
T
SCKR  
SIO[3:0]  
LSB  
MSB  
FIGURE 8-3:  
SERIAL OUTPUT TIMING DIAGRAM  
CE#  
T
T
SCKH  
SCKL  
SCK  
T
OH  
T
T
CLZ  
CHZ  
SIO[3:0]  
MSB  
LSB  
T
V
2020-2021 Microchip Technology Inc.  
DS20006292B-page 45  
SST26VF040A  
FIGURE 8-4:  
RESET TIMING DIAGRAM  
T
CPH  
CE#  
CLK  
MODE 3  
MODE 3  
MODE 0  
MODE 3  
MODE 0  
MODE 0  
SIO[3:0]  
C1 C0  
C3 C2  
Note:  
C[1:0] = 66H; C[3:2] = 99H  
TABLE 8-2:  
RESET TIMING PARAMETERS  
TR(I)  
Parameter  
Minimum  
Maximum  
Units  
ns  
TRECR Reset to Read (non-data operation)  
TRECP Reset Recovery from Program or Suspend  
TRECE Reset Recovery from Erase  
20  
100  
1
µs  
ms  
ns  
TRST  
TRHZ  
Reset Pulse Width (Hardware Reset)  
Reset to High Z Output  
100  
105  
ns  
FIGURE 8-5:  
HARDWARE RESET TIMING DIAGRAM  
CE#  
T
T
T
RECR  
RECP  
RECE  
SCK  
T
RST  
RST#  
T
RHZ  
SO  
SI  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 46  
SST26VF040A  
FIGURE 8-6:  
AC INPUT/OUTPUT REFERENCE WAVEFORMS  
V
IHT  
V
V
HT  
HT  
INPUT  
REFERENCE POINTS  
OUTPUT  
V
V
LT  
LT  
V
ILT  
AC test inputs are driven at VIHT (0.9VDD) for a logic ‘1’ and VILT (0.1VDD) for a logic ‘0’. Measurement reference  
points for inputs and outputs are VHT (0.6VDD) and VLT (0.4VDD). Input rise and fall times (10% 90%) are <3 ns.  
Note:  
VHT - VHIGH Test  
VLT - VLOW Test  
VIHT - VINPUT HIGH Test  
VILT - VINPUT LOW Test  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 47  
SST26VF040A  
9.0  
9.1  
PACKAGING INFORMATION  
Package Marking  
8-Lead SOIC (3.90 mm)  
Example  
26F040A  
SN1929  
343  
8-Lead WDFN (5x6 mm)  
Example  
26F040A  
MF  
e
3
1929343  
1st Line Marking Codes  
Part Number  
SST26VF040A  
SOIC  
WDFN  
26F040A  
26F040A  
Legend: XX...X Part number or part number code  
Y
YY  
Year code (last digit of calendar year)  
Year code (last 2 digits of calendar year)  
WW  
NNN  
Week code (week of January 1 is week ‘01’)  
Alphanumeric traceability code  
Pb-free JEDEC® designator for Matte Tin (Sn)  
e
3
Note: For very small packages with no room for the Pb-free JEDEC® designator  
e
3
, the marking will only appear on the outer carton or reel label.  
Note: In the event the full Microchip part number cannot be marked on one line, it will  
be carried over to the next line, thus limiting the number of available  
characters for customer-specific information.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 48  
SST26VF040A  
9.2  
Packaging Diagrams  
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC]  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
2X  
0.10 C A–B  
D
A
D
NOTE 5  
N
E
2
E1  
2
E1  
E
2X  
0.10 C A–B  
2X  
0.10 C A–B  
1
2
NOTE 1  
e
NX b  
0.25  
C A–B D  
B
NOTE 5  
TOP VIEW  
0.10 C  
0.10 C  
C
A2  
A
SEATING  
PLANE  
8X  
SIDE VIEW  
A1  
h
R0.13  
R0.13  
h
H
0.23  
L
SEE VIEW C  
(L1)  
VIEW A–A  
VIEW C  
Microchip Technology Drawing No. C04-057-SN Rev F Sheet 1 of 2  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 49  
SST26VF040A  
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC]  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
Units  
MILLIMETERS  
Dimension Limits  
MIN  
NOM  
MAX  
Number of Pins  
Pitch  
N
e
8
1.27 BSC  
Overall Height  
Molded Package Thickness  
Standoff  
Overall Width  
A
-
-
-
-
1.75  
-
0.25  
A2  
A1  
E
1.25  
0.10  
§
6.00 BSC  
Molded Package Width  
Overall Length  
E1  
D
3.90 BSC  
4.90 BSC  
Chamfer (Optional)  
Foot Length  
h
L
0.25  
0.40  
-
-
0.50  
1.27  
Footprint  
L1  
1.04 REF  
Foot Angle  
Lead Thickness  
Lead Width  
Mold Draft Angle Top  
Mold Draft Angle Bottom  
0°  
0.17  
0.31  
5°  
-
-
-
-
-
8°  
c
b
0.25  
0.51  
15°  
5°  
15°  
Notes:  
1. Pin 1 visual index feature may vary, but must be located within the hatched area.  
2. § Significant Characteristic  
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or  
protrusions shall not exceed 0.15mm per side.  
4. Dimensioning and tolerancing per ASME Y14.5M  
BSC: Basic Dimension. Theoretically exact value shown without tolerances.  
REF: Reference Dimension, usually without tolerance, for information purposes only.  
5. Datums A & B to be determined at Datum H.  
Microchip Technology Drawing No. C04-057-SN Rev F Sheet 2 of 2  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 50  
SST26VF040A  
8-Lead Plastic Small Outline (SN) - Narrow, 3.90 mm (.150 In.) Body [SOIC]  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
SILK SCREEN  
C
Y1  
X1  
E
RECOMMENDED LAND PATTERN  
Units  
Dimension Limits  
MILLIMETERS  
NOM  
MIN  
MAX  
Contact Pitch  
E
C
X1  
Y1  
1.27 BSC  
5.40  
Contact Pad Spacing  
Contact Pad Width (X8)  
Contact Pad Length (X8)  
0.60  
1.55  
Notes:  
1. Dimensioning and tolerancing per ASME Y14.5M  
BSC: Basic Dimension. Theoretically exact value shown without tolerances.  
Microchip Technology Drawing C04-2057-SN Rev F  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 51  
SST26VF040A  
8-Lead Plastic Very, Very Thin Small Outline No-Lead (MF) - 5x6 mm Body [WDFN]  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
D
A
B
E
N
(DATUM A)  
(DATUM B)  
NOTE 1  
2X  
0.15 C  
1
2
2X  
0.15 C  
TOP VIEW  
A1  
0.10 C  
C
A
SEATING  
PLANE  
A3  
SIDE VIEW  
0.08 C  
C A B  
0.10  
D2  
e
1
2
0.10  
C A B  
NOTE 1  
E2  
K
N
8 X b  
0.10  
0.05  
C A B  
C
SEE DETAIL A  
BOTTOM VIEW  
Microchip Technology Drawing C04-210B Sheet 1 of 2  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 52  
SST26VF040A  
8-Lead Plastic Very, Very Thin Small Outline No-Lead (MF) - 5x6 mm Body [WDFN]  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
(DATUM A)  
L
e/2  
e
DETAIL A  
Units  
Dimension Limits  
MILLIMETERS  
NOM  
MIN  
MAX  
Number of Terminals  
Pitch  
Overall Height  
Standoff  
Terminal Thickness  
Overall Width  
Exposed Pad Width  
Overall Length  
Exposed Pad Length  
Terminal Width  
Terminal Length  
N
8
e
1.27 BSC  
0.75  
0.02  
0.20 REF  
5.00 BSC  
4.00 BSC  
6.00 BSC  
3.40 BSC  
0.42  
A
A1  
A3  
D
D2  
E
E2  
b
L
0.70  
0.00  
0.80  
0.05  
0.35  
0.50  
0.20  
0.48  
0.70  
-
0.60  
-
Terminal-to-Exposed-Pad  
K
Notes:  
1. Pin 1 visual index feature may vary, but must be located within the hatched area.  
2. Package is saw singulated  
3. Dimensioning and tolerancing per ASME Y14.5M  
BSC: Basic Dimension. Theoretically exact value shown without tolerances.  
REF: Reference Dimension, usually without tolerance, for information purposes only.  
Microchip Technology Drawing C04-210B Sheet 2 of 2  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 53  
SST26VF040A  
8-Lead Plastic Very, Very Thin Small Outline No-Lead (MF) - 5x6 mm Body [WDFN]  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
C
X2  
E
X1  
Y2  
Y1  
SILK SCREEN  
RECOMMENDED LAND PATTERN  
Units  
Dimension Limits  
E
MILLIMETERS  
NOM  
1.27 BSC  
MIN  
MAX  
Contact Pitch  
Optional Center Pad Width  
Optional Center Pad Length  
Contact Pad Spacing  
X2  
Y2  
C
3.50  
4.10  
5.70  
Contact Pad Width (X8)  
Contact Pad Length (X8)  
X1  
Y1  
0.45  
1.10  
Notes:  
1. Dimensioning and tolerancing per ASME Y14.5M  
BSC: Basic Dimension. Theoretically exact value shown without tolerances.  
Microchip Technology Drawing C04-2210A  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 54  
SST26VF040A  
10.0 REVISION HISTORY  
Revision B (July 2021)  
Added note to Table 2-1. Updated Figure 5-13. Added  
Product Identification System (Automotive). Updated  
SOIC package drawing.  
Revision A (January 2020)  
Initial release of the document.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 55  
SST26VF040A  
THE MICROCHIP WEBSITE  
CUSTOMER SUPPORT  
Microchip provides online support via our website at  
www.microchip.com. This website is used as a means  
to make files and information easily available to  
customers. Accessible by using your favorite Internet  
browser, the website contains the following information:  
Users of Microchip products can receive assistance  
through several channels:  
• Distributor or Representative  
• Local Sales Office  
• Field Application Engineer (FAE)  
Technical Support  
Product Support – Data sheets and errata, appli-  
cation notes and sample programs, design  
resources, user’s guides and hardware support  
documents, latest software releases and archived  
software  
Customers should contact their distributor, representa-  
tive or Field Application Engineer (FAE) for support.  
Local sales offices are also available to help custom-  
ers. A listing of sales offices and locations is included in  
the back of this document.  
General Technical Support – Frequently Asked  
Questions (FAQ), technical support requests,  
online discussion groups, Microchip consultant  
program member listing  
Technical support is available through the website  
at: http://microchip.com/support  
Business of Microchip – Product selector and  
ordering guides, latest Microchip press releases,  
listing of seminars and events, listings of Micro-  
chip sales offices, distributors and factory repre-  
sentatives  
CUSTOMER CHANGE NOTIFICATION  
SERVICE  
Microchip’s customer notification service helps keep  
customers current on Microchip products. Subscribers  
will receive e-mail notification whenever there are  
changes, updates, revisions or errata related to a spec-  
ified product family or development tool of interest.  
To register, access the Microchip website at  
www.microchip.com. Under “Support”, click on “Cus-  
tomer Change Notification” and follow the registra-  
tion instructions.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 56  
SST26VF040A  
PRODUCT IDENTIFICATION SYSTEM (NON-AUTOMOTIVE)  
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.  
[X](1)  
–XXX  
X
/XX  
PART NO.  
Device  
Valid Combinations:  
Temperature Package  
Tape and Reel  
Indicator  
Operating  
Frequency  
a)  
b)  
c)  
d)  
SST26VF040A-104I/SN  
SST26VF040AT-104I/SN  
SST26VF040A-104I/MF  
SST26VF040AT-104I/MF  
Device:  
SST26VF040A = 4 Mbit, 2.5V/3.0V, SQI Flash memory  
WP#/Hold# pin enable at power-up  
e)  
f)  
g)  
h)  
SST26VF040A-80E/SN  
SST26VF040AT-80E/SN  
SST26VF040A-80E/MF  
SST26VF040AT-80E/MF  
Tape and Reel Blank  
=
=
Standard packaging (tube or tray)  
Tape and Reel  
(1)  
Indicator:  
T
Operating  
Frequency  
104  
80  
=
=
104 MHz  
80 MHz  
Note 1: Tape and Reel identifier only appears in  
the catalog part number description. This  
identifier is used for ordering purposes  
and is not printed on the device package.  
Check with your Microchip Sales Office  
for package availability with the Tape and  
Reel option.  
Temperature  
Range:  
I
E
= -40C to +85C (Industrial)  
= -40C to +125C (Extended)  
Package:  
SN  
MF  
= SOIC (3.90 mm Body), 8-lead  
= WDFN (6 mm x 5 mm Body), 8-lead  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 57  
SST26VF040A  
PRODUCT IDENTIFICATION SYSTEM (AUTOMOTIVE)  
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.  
[X](1)  
–XXX  
X
/XX  
XXX(2,3)  
PART NO.  
Device  
Valid Combinations:  
Temperature Package  
Tape and Reel  
Indicator  
Operating  
Frequency  
Variant  
a)  
b)  
c)  
d)  
SST26VF040A-80E/SN70SVAO  
SST26VF040A-80E/MF70SVAO  
SST26VF040AT-80E/SN70SVAO  
SST26VF040AT-80E/MF70SVAO  
Device:  
SST26VF040A = 4 Mbit, 2.5V/3.0V, SQI Flash memory  
WP#/Hold# pin enable at power-up  
Tape and Reel Blank  
=
=
Standard packaging (tube or tray)  
Tape and Reel  
(1)  
Note 1: Tape and Reel identifier only appears in  
the catalog part number description. This  
identifier is used for ordering purposes  
and is not printed on the device package.  
Check with your Microchip Sales Office  
for package availability with the Tape and  
Reel option.  
Indicator:  
T
Operating  
Frequency  
104  
80  
=
=
104 MHz  
80 MHz  
Temperature  
Range:  
I
E
= -40C to +85C (AEC-Q100 Grade 3)  
= -40C to +125C (AEC-Q100 Grade 1)  
2: The VAO/VXX automotive variants have  
been designed, manufactured, tested  
and qualified in accordance with  
AEC-Q100 requirements for automotive  
applications.  
Package:  
SN  
MF  
= SOIC (3.90 mm Body), 8-lead  
= WDFN (6 mm x 5 mm Body), 8-lead  
3: For customers requesting a PPAP, a cus-  
tomer-specific part number will be gener-  
(2,3)  
ated and provided.  
A PPAP is not  
Variant  
:
VAO  
VXX  
= Standard Automotive  
= Customer Specific Automotive  
provided for VAO part numbers.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 58  
SST26VF040A  
11.0 APPENDIX  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 1 OF 13)  
Bit  
Address  
Data  
Comments  
Address  
SFDP Header  
SFDP Header: 1st DWORD  
00H  
01H  
02H  
03H  
A7:A0  
A15:A8  
A23:A16  
A31:A24  
53H  
46H  
44H  
50H  
SFDP Signature  
SFDP Signature = 50444653H  
SFDP Header: 2nd DWORD  
04H  
05H  
06H  
07H  
A7:A0  
A15:A8  
A23:A16  
A31:A24  
06H  
01H  
02H  
FFH  
SFDP Minor Revision Number  
SFDP Major Revision Number  
Number of Parameter Headers (NPH) = 3  
Unused. Contains FF and cannot be changed.  
Parameter Headers  
JEDEC Flash Parameter Header: 1st DWORD  
Parameter ID LSB Number  
When this field is set to 00H, it indicates a JEDEC-specified header. For  
vendor-specified headers, this field must be set to the vendor’s manufacturer  
ID.  
08H  
09H  
A7:A0  
00H  
06H  
Parameter Table Minor Revision Number  
Minor revisions are either clarifications or changes that add parameters in  
existing Reserved locations. Minor revisions do NOT change overall struc-  
ture of SFDP. Minor revision starts at 00H.  
A15:A8  
Parameter Table Major Revision Number  
Major revisions are changes that reorganize or add parameters to locations  
that are NOT currently Reserved. Major revisions would require code  
(BIOS/firmware) or hardware change to get previously defined discoverable  
parameters. Major revision starts at 01H.  
0AH  
0BH  
A23:A16  
A31:A24  
01H  
10H  
Parameter Table Length  
Number of DWORDs that are in the Parameter table.  
JEDEC Flash Parameter Header: 2nd DWORD  
0CH  
0DH  
0EH  
0FH  
A7:A0  
A15:A8  
A23:A16  
A31:A24  
30H  
00H  
00H  
FFH  
Parameter Table Pointer (PTP)  
A 24-bit address that specifies the start of this header’s Parameter table in  
the SFDP structure. The address must be DWORD-aligned.  
Parameter ID MSB Number  
JEDEC Sector Map Parameter Header: 3rd DWORD  
Parameter ID LSB Number  
Sector Map Function specific table is assigned 81H.  
10H  
11H  
A7:A0  
81H  
00H  
Parameter Table Minor Revision Number  
Minor revisions are either clarifications or changes that add parameters in  
existing Reserved locations. Minor revisions do NOT change overall struc-  
ture of SFDP. Minor revision starts at 00H.  
A15:A8  
Parameter Table Major Revision Number  
Major revisions are changes that reorganize or add parameters to locations  
that are NOT currently Reserved. Major revisions would require code  
(BIOS/firmware) or hardware change to get previously defined discoverable  
parameters. Major revision starts at 01H.  
12H  
13H  
A23:A16  
A31:A24  
01H  
02H  
Parameter Table Length  
Number of DWORDs that are in the Parameter table.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 59  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 2 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
JEDEC Sector Map Parameter Header: 4th DWORD  
14H  
15H  
16H  
17H  
A7:A0  
A15:A8  
A23:A16  
A31:A24  
00H  
01H  
00H  
FFH  
Parameter Table Pointer (PTP)  
This 24-bit address specifies the start of this header’s Parameter table in the  
SFDP structure. The address must be DWORD-aligned.  
Parameter ID MSB Number  
Microchip (Vendor) Parameter Header: 5th DWORD  
ID Number  
Manufacture ID (vendor specified header)  
18H  
A7:A0  
BFH  
19H  
1AH  
1BH  
A15:A8  
A23:A16  
A31:A24  
00H  
01H  
13H  
Parameter Table Minor Revision Number  
Parameter Table Major Revision Number, Revision 1.0  
Parameter Table Length, 19 Double Words  
Microchip (Vendor) Parameter Header: 6th DWORD  
1CH  
1DH  
1EH  
1FH  
A7:A0  
A15:A8  
A23:A16  
A31:A24  
00H  
02H  
00H  
01H  
Parameter Table Pointer (PTP)  
This 24-bit address specifies the start of this header’s Parameter table in the  
SFDP structure. The address must be DWORD-aligned.  
Used to indicate bank number (vendor specific).  
JEDEC Flash Parameter Table  
JEDEC Flash Parameter Table: 1st DWORD  
Block/Sector Erase Sizes  
00: Reserved  
A1:A0  
A2  
01: 4-Kbyte Erase  
10: Reserved  
11: Use this setting only if the 4-Kbyte erase is unavailable.  
Write Granularity  
0: Single-byte programmable devices or buffer programmable devices with  
buffer is less than 64 bytes (32 words).  
1: For buffer programmable devices when the buffer size is 64 bytes  
(32 words) or larger.  
30H  
FDH  
Volatile STATUS Register  
0: Target Flash has nonvolatile Status bit. Write/Erase commands do not  
require STATUS register to be written on every power-on.  
1: Target Flash has volatile Status bits.  
A3  
A4  
Write Enable Opcode Select for Writing to Volatile STATUS Register  
0: 0x50. Enables a STATUS register write when bit 3 is set to ‘1’.  
1: 0x06 Enables a STATUS register write when bit 3 (A3) is set to ‘1.  
A7:A5  
Unused. Contains 111band cannot be changed.  
31H  
A15:A8  
20H  
4-Kbyte Erase Opcode  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 60  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 3 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
Supports (1-1-2) Fast Read  
A16  
0: (1-1-2) Fast Read NOT supported  
1: (1-1-2) Fast Read supported  
Address Bytes  
Number of bytes used in addressing Flash array read, write and erase  
00: 3-Byte only addressing  
A18:A17  
01: 3- or 4-Byte addressing (e.g., defaults to 3-Byte mode; enters 4-Byte  
mode on command)  
10: 4-Byte only addressing  
11: Reserved  
Supports Double Transfer Rate (DTR) Clocking  
Indicates the device supports some type of double transfer rate clocking.  
0: DTR NOT supported  
A19  
A20  
1: DTR Clocking supported  
Supports (1-2-2) Fast Read  
Device supports single input opcode, dual input address, and dual output  
data Fast Read.  
32H  
F1H  
0: (1-2-2) Fast Read NOT supported  
1: (1-2-2) Fast Read supported  
Supports (1-4-4) Fast Read  
Device supports single input opcode, quad input address, and quad output  
data Fast Read  
0: (1-4-4) Fast Read NOT supported  
1: (1-4-4) Fast Read supported  
A21  
A22  
Supports (1-1-4) Fast Read  
Device supports single input opcode & address and quad output data Fast  
Read.  
0: (1-1-4) Fast Read NOT supported  
1: (1-1-4) Fast Read supported  
A23  
Unused. Contains ‘1’ cannot be changed.  
33H  
A31:A24  
FFH  
Unused. Contains FF cannot be changed.  
JEDEC Flash Parameter Table: 2nd DWORD  
34H  
35H  
36H  
37H  
A7:A0  
A15:A8  
A23:A16  
A31:A24  
FFH  
FFH  
3FH  
00H  
Flash Memory Density  
SST26VF040A = 003FFFFFH  
JEDEC Flash Parameter Table: 3rd DWORD  
(1-4-4) Fast Read Number of Wait states (dummy clocks) needed before  
valid output  
A4:A0  
00100b: 4 dummy clocks (16 dummy bits) are needed with a Quad Input  
Address Phase instruction.  
38H  
39H  
44H  
Quad Input Address Quad Output (1-4-4) Fast Read Number of Mode  
Bits  
010b: 2 dummy clocks (8 mode bits) are needed with a single input opcode,  
quad input address and quad output data Fast Read instruction.  
A7:A5  
(1-4-4) Fast Read Opcode  
Opcode for single input opcode, quad input address and quad output data  
Fast Read instruction.  
A15:A8  
EBH  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 61  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 4 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
(1-1-4) Fast Read Number of Wait states (dummy clocks) needed before  
valid output  
01000b: 8 dummy bits are needed with a single input opcode & address and  
quad output data Fast Read instruction.  
A20:A16  
3AH  
08H  
(1-1-4) Fast Read Number of Mode Bits  
A23:A21  
A31:A24  
000b: No mode bits are needed with a single input opcode & address and  
quad output data Fast Read instruction.  
(1-1-4) Fast Read Opcode  
Opcode for single input opcode & address and quad output data Fast Read  
3BH  
6BH  
instruction.  
JEDEC Flash Parameter Table: 4th DWORD  
(1-1-2) Fast Read Number of Wait states (dummy clocks) needed before  
valid output  
A4:A0  
01000b: 8 dummy clocks are needed with a single input opcode, address  
and dual output data Fast Read instruction.  
3CH  
08H  
(1-1-2) Fast Read Number of Mode Bits  
A7:A5  
000b: No mode bits are needed with a single input opcode & address and  
quad output data Fast Read instruction.  
(1-1-2) Fast Read Opcode  
3DH  
3EH  
3FH  
A15:A8  
3BH  
80H  
BBH  
Opcode for single input opcode & address and dual output data Fast Read  
instruction.  
(1-2-2) Fast Read Number of Wait states (dummy clocks) needed before  
valid output  
00000b: 0 clocks of dummy cycle.  
A20:A16  
A23:A21  
A31:A24  
(1-2-2) Fast Read Number of Mode Bits (in clocks)  
100b: 4 clocks of mode bits are needed.  
(1-2-2) Fast Read Opcode  
Opcode for single input opcode, dual input address, and dual output data  
Fast Read instruction.  
JEDEC Flash Parameter Table: 5th DWORD  
Supports (2-2-2) Fast Read  
Device supports dual input opcode & address and dual output data Fast  
Read.  
0: (2-2-2) Fast Read NOT supported  
1: (2-2-2) Fast Read supported  
A0  
A3:A1  
A4  
Reserved. Bits default to all 1’s.  
40H  
FEH  
Supports (4-4-4) Fast Read  
Device supports Quad input opcode & address and quad output data Fast  
Read.  
0: (4-4-4) Fast Read NOT supported  
1: (4-4-4) Fast Read supported  
A7:A5  
A15:A8  
A23:A16  
A31:A24  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
41H  
42H  
43H  
FFH  
FFH  
FFH  
JEDEC Flash Parameter Table: 6th DWORD  
44H  
45H  
A7:A0  
FFH  
FFH  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
A15:A8  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 62  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 5 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
(2-2-2) Fast Read Number of Wait states (dummy clocks) needed before  
valid output  
00000b: No dummy bit is needed  
A20:A16  
A23:A21  
A31:A24  
46H  
00H  
(2-2-2) Fast Read Number of Mode Bits  
000b: No mode bits are needed  
(2-2-2) Fast Read Opcode  
Opcode for dual input opcode & address and dual output data Fast Read (not  
47H  
FFH  
supported).  
JEDEC Flash Parameter Table: 7th DWORD  
48H  
49H  
A7:A0  
FFH  
FFH  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
A15:A8  
(4-4-4) Fast Read Number of Wait states (dummy clocks) needed before  
valid output  
00100b: 4 clocks dummy are needed with a quad input opcode & address  
and quad output data Fast Read instruction.  
A20:A16  
4AH  
44H  
(4-4-4) Fast Read Number of Mode Bits  
A23:A21  
A31:A24  
010b: 2 clocks mode bits are needed with a quad input opcode & address  
and quad output data Fast Read instruction.  
(4-4-4) Fast Read Opcode  
Opcode for quad input opcode/address, quad output data Fast Read.  
4BH  
0BH  
JEDEC Flash Parameter Table: 8th DWORD  
Sector Type 1 Size  
4CH  
4DH  
4EH  
4FH  
A7:A0  
A15:A8  
A23:A16  
A31:A24  
0CH  
20H  
0FH  
D8H  
4-Kbyte, Sector/Block size = 2N bytes  
Sector Type 1 Opcode  
Opcode used to erase the number of bytes specified by Sector Type 1 Size.  
Sector Type 2 Size  
32-Kbyte, Sector/Block size = 2N bytes  
Sector Type 2 Opcode  
Opcode used to erase the number of bytes specified by Sector Type 2 Size.  
JEDEC Flash Parameter Table: 9th DWORD  
Sector Type 3 Size  
50H  
51H  
52H  
53H  
A7:A0  
A15:A8  
A23:A16  
A31:A24  
10H  
D8H  
00H  
00H  
64-Kbyte, Sector/Block size = 2N bytes  
Sector Type 3 Opcode  
Opcode used to erase the number of bytes specified by Sector Type 3 Size.  
Sector Type 4 Size  
64-Kbyte, Sector/Block size = 2N bytes  
Sector Type 4 Opcode  
Opcode used to erase the number of bytes specified by Sector Type 4 Size.  
JEDEC Flash Parameter Table: 10th DWORD  
Multiplier from typical erase time to maximum erase time.  
Maximum time = 2*(count +1)*Typical erase time  
Count = 0  
A3:A0 = 0000b  
A3:A0  
A7:A4  
Erase Type 1 Erase, Typical time  
Typical time = (count+1)*units  
1 ms to 32 ms, 16 ms to 512 ms, 128 ms to 4096 ms, 1s to 32s  
10:9 units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1s)  
A8:A4 count = 18 = 10010b  
54H  
20H  
A10:A9 unit = 1 ms = 00b  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 63  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 6 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
A10:A8  
A15:A11  
A17:A16  
A23:A18  
A24  
A10:A8 = 001b  
Erase Type 2 Erase, Typical time  
Typical time = (count+1)*units  
1 ms to 32 ms, 16 ms to 512 ms, 128 ms to 4096 ms, 1s to 32s  
17:16 units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1s)  
A15:A11 count = 18 = 10010b  
55H  
91H  
A17:A16 unit = 1 ms = 00b  
A17:A16 = 00b  
Erase Type 3 Erase, Typical time  
Typical time = (count+1)*units  
1 ms to 32 ms, 16 ms to 512 ms, 128 ms to 4096 ms, 1s to 32s  
24:23 units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1s)  
A22:A18 count = 18 = 10010b  
56H  
57H  
48H  
24H  
A24:A23 unit = 1ms = 00b  
A24 = 0b  
Erase Type 4 Erase, Typical time  
Typical time = (count+1)*units  
1 ms to 32 ms, 16 ms to 512 ms, 128 ms to 4096 ms, 1s to 32s  
31:30 units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1s)  
A29:A25 count = 18 = 10010b  
A31:A25  
A31:A30 unit = 1 ms = 00b  
JEDEC Flash Parameter Table: 11th DWORD  
Multiplier from typical program time to maximum program time  
Maximum time = 2*(count +1)*Typical program time  
Count = 0  
A3:A0 = 0000b  
A3:A0  
A7:A4  
58H  
80H  
Page Size  
Page size = 2^N bytes  
N = 8  
A7:A4 = 1000b  
Page Program Typical time,  
Program time = (count+1)*units  
13 units (0b: 8 µs, 1b: 64 µs)  
A12:A8 count = 11 = 01111b  
A13 unit = 64 µs = 1b  
A31:A8  
59H  
6FH  
Byte Program Typical time, first byte  
Typical time = (count+1)*units  
18 units (0b: 1 µs, 1b: 8 µs)  
A17:A14 count = 5 = 0101b  
A18 = 8 µs = 1b  
A15:A14  
A18:A16  
A23:A19  
A18:A16 = 101b  
Byte Program Typical time, additional byte  
Typical time = (count+1)*units  
23 units (0b: 1 µs, 1b: 8 µs)  
A22:A19 count = 0011b  
5AH  
1DH  
A23 = 1 µs = 0b  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 64  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 7 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
Chip Erase Typical time  
Typical time = (count+1)*units  
A30:A24  
16 ms to 512 ms, 256 ms to 8192 ms, 4s to 128s, 64s to 2048s  
A28:A24 count = 1 = 00001b  
A30:A29 units = 16 ms = 00b  
5AH  
81H  
Reserved  
A31 = 1b  
A31  
JEDEC Flash Parameter Table: 12th DWORD  
Prohibited Operations During Program Suspend  
xxx0b: May not initiate a new erase anywhere  
xxx1b: May not initiate a new erase in the program suspended page  
size  
xx0xb: May not initiate a new page program anywhere  
xx1xb: May not initiate a new page program in program suspended page  
size  
A3:A0  
x0xxb: Refer to the data sheet  
x1xxb: May not initiate a read in the program suspended page size  
0xxxb: Additional erase or program restrictions apply  
1xxxb: The erase and program restrictions in bits 1:0 are sufficient  
5CH  
EDH  
Prohibited Operation During Erase Suspend  
xxx0b: May not initiate a new erase anywhere  
xxx1b: May not initiate a new erase in the erase suspended page size  
xx0xb: May not initiate a new page program anywhere  
xx1xb: May not initiate a new page program in erase suspended erase  
type size  
A7:A4  
x0xxb: Refer to the data sheet  
x1xxb: May not initiate a read in the erase suspended page size  
0xxxb: Additional erase or program restrictions apply  
1xxxb: The erase and program restrictions in bits 5:4 are sufficient  
A8  
Reserved = 1b  
Program Resume to Suspend Interval  
The device requires this typical amount of time to make progress on the  
program operation before allowing another suspend.  
Interval = 500 µs  
A12:A9  
Program resume to suspend interval = (count+1)*64 µs  
A12:A9 = 7 = 0111b  
Suspend in-progress program max latency  
Maximum time required by the Flash device to suspend an in-progress  
program and be ready to accept another command which accesses the  
Flash array.  
5DH  
0FH  
A15:A13  
Max. latency = 25 µs  
program max. latency =(count+1)*units  
units (00b: 128 ns, 01b: 1 µs, 10b: 8 µs, 11b: 64 µs)  
A17:A13 = count = 24 = 11000b  
A19:A18 = 1 µs = 01b  
A19:A16  
A23:A20  
0111b  
Erase Resume to Suspend Interval  
The device requires this typical amount of time to make progress on the  
erase operation before allowing another suspend.  
Interval = 500 µs  
5EH  
77H  
Erase resume to suspend interval = (count+1)*64 µs  
A23:A20 = 7 = 0111b  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 65  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 8 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
Suspend in-progress erase max. latency  
Maximum time required by the Flash device to suspend an in-progress erase  
and be ready to accept another command which accesses the Flash array.  
Max. latency = 25 µs  
A30:A24  
Erase max. latency = (count+1)*units  
units (00b: 128 ns, 01b: 1µs, 10b: 8 µs, 11b: 64 µs)  
A28:A24= count = 24 = 11000b  
5FH  
38H  
A30:A29 = 1 µs = 01b  
Suspend/Resume supported  
0: supported  
A31  
1: not supported  
JEDEC Flash Parameter Table: 13th DWORD  
60H  
61H  
62H  
63H  
A7:A0  
A15:A8  
A23:A16  
A31:A24  
30H  
B0H  
30H  
B0H  
Program Resume Instruction  
Program Suspend Instruction  
Resume Instruction  
Suspend Instruction  
JEDEC Flash Parameter Table: 14th DWORD  
A1:A0  
Reserved = 11b  
STATUS Register Polling Device Busy  
111101b: Use of legacy polling is supported by reading the STATUS register  
with 05h instruction and checking WIP bit [0] (0= ready, 1= busy)  
64H  
65H  
F7H  
A9H  
A7:A2  
Exit Deep Power-Down to next operation delay – 10 µs  
Delay = (count+1)*unit  
A12:A8 = count = 9 = 01001b  
A14:A8  
A14:A13 units = 01b = 1 µs  
Exit Power-Down Instruction – ABH= 10101011b  
A15 = 1b  
A15  
A22:A16  
A23  
A22:A16 = 1010101b  
66H  
67H  
D5H  
5CH  
Enter Power-Down Instruction – B9H = 10111001b  
A23 = 1b  
A30:A24  
A30:A24 = 1011100  
Deep Power-Down Supported  
0: supported  
A31  
1: not supported  
JEDEC Flash Parameter Table: 15th DWORD  
4-4-4 mode disable sequences  
A3:A0  
Xxx1b: issue FF instruction  
1xxxb: issue the Soft Reset 66/99 sequence  
68H  
69H  
29H  
C2H  
4-4-4 mode enable sequences  
X_xx1xb: issue instruction 38H  
A7:A4  
A8  
4-4-4 mode enable sequences  
A8 = 0  
0-4-4 mode supported  
0: not supported  
1: supported  
A9  
0-4-4 Mode Exit Method  
A15:A10  
X1_xxxx: Mode Bit[7:0] Not = AXh  
1x_xxxx: Reserved = 1  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 66  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 9 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
0-4-4 Mode Entry Method  
X1xxb: M[7:0] = AXh  
1xxxb: Reserved = 1  
A19:A16  
A22:A20  
6AH  
6BH  
5CH  
FFH  
Quad Enable Requirements (QER)  
101b: Quad Enable is bit 1 of the Configuration register.  
HOLD and Reset Disable  
0: feature is not supported  
A23  
A31:A24  
Reserved bits = 0xFF  
JEDEC Flash Parameter Table: 16th DWORD  
Volatile or Nonvolatile Register and Write Enable Instructions for STATUS  
Register 1  
Xx1_xxxxb: STATUS Register 1 contains a mix of volatile and nonvolatile  
bits. The 06h instruction is used to enable writing to the register.  
X1x_xxxxb: Reserved = 1  
A6:A0  
6C  
6D  
F0H  
30H  
1xx_xxxxb: Reserved = 1  
A7  
Reserved =1b  
Soft Reset and Rescue Sequence Support  
X1_xxxxb: Reset Enable instruction 66h is issued followed by Reset  
instruction 99h.  
A13:A8  
1x_xxxxb: exit 0-4-4 mode is required prior to other Reset sequences.  
Exit 4-Byte Addressing  
Not supported  
A15:A14  
A23:A16  
Exit 4-Byte Addressing  
Not supported  
A21:A14 = 00000000b  
A23 and A22 are Reserved bits which are = 1  
6E  
6F  
C0H  
80H  
Enter 4-Byte Addressing  
Not supported  
A31:A24  
1xxx_xxxx: Reserved = 1  
JEDEC Sector Map Parameter Table  
A7:A2 = Reserved = 111111b  
A1 = Descriptor Type = Map = 1b  
A0 = Last map = 1b  
100H  
A7:A0  
FFH  
101H  
102H  
103H  
104H  
A15:A8  
A23:A16  
A31:A24  
A7:A0  
00H  
00H  
FFH  
F7H  
Configuration ID = 00h  
Region Count = 1 Region  
Reserved = FFh  
Region 0 supports 4-Kbyte erase, 32-Kbyte erase and 64-Kbyte erase  
A3:A0 = 0111b  
A7:A4 = Reserved = 1111b  
105H  
A15:A8  
FFH  
Region 0 Size  
For 4 Mbit device  
Count = 4 Mbit/256 bytes = 2048  
Value = count - 1 = 2047  
A31:A8 = 0007FFh  
106H  
107H  
A23:A16  
A31:A24  
07H  
00H  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 67  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 10 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
SST26VF040A (Vendor) Parameter Table  
SST26VF040A Identification  
200H  
201H  
A7:A0  
BFH  
26H  
Manufacturer ID  
Memory Type  
A15:A8  
Device ID  
SST26VF040A = 14H  
202H  
203H  
A23:A16  
A31:A24  
14H  
FFH  
Reserved. Bits default to all 1’s.  
SST26VF040A Interface  
Interfaces Supported  
000: SPI only  
001: Power-up default is SPI; Quad can be enabled/disabled  
010: Reserved  
A2:A0  
111: Reserved  
Supports Enable Quad  
0: not supported  
1: supported  
A3  
A6:A4  
A7  
204H  
B9H  
Supports Hold#/RST# Function  
000: Hold#  
001: RST#  
010: HOLD/RST#  
011: I/O when in SQI(4-4-4), 1-4-4 or 1-1-4 Read  
Supports Software Reset  
0: not supported  
1: supported  
Supports Quad Reset  
0: not supported  
1: supported  
A8  
A10:A9  
A13:A11  
Reserved. Bits default to all 1’s.  
Byte-Program or Page-Program (256 Bytes)  
011: Byte Program/Page Program in SPI and Quad Page Program once  
Quad is enabled  
205H  
DFH  
Program-Erase Suspend Supported  
0: Not Supported  
1: Program/Erase Suspend Supported  
A14  
A15  
Deep Power-Down Mode Supported  
0: Not Supported  
1: Deep Power-Down Mode Supported  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 68  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 11 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
OTP Capable (Security ID) Supported  
A16  
A17  
A18  
0: not supported  
1: supported  
Supports Block Group Protect  
0: not supported  
1: supported  
Supports Independent Block Protect  
0: not supported  
206H  
F3H  
1: supported  
Supports Independent Nonvolatile Lock (Block or Sector becomes  
OTP)  
0: not supported  
1: supported  
A19  
A23:A20  
A31:A24  
A7:A0  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
207H  
208H  
209H  
20AH  
20BH  
FFH  
30H  
F2H  
60H  
F3H  
VDD Minimum Supply Voltage  
2.30V (F230)  
A15:A8  
A23:A16  
A31:A24  
VDD Maximum Supply Voltage  
3.60V (F360H)  
Typical Time-out for Byte Program: 50 µs  
20CH  
A7:A0  
32H  
Typical time-out for Byte Program is in µs. Represented by conversion of the  
actual time from the decimal to hexadecimal number.  
20DH  
20EH  
A15:A8  
FFH  
0AH  
Reserved. Bits default to all 1’s.  
A23:A16  
Typical Time-out for Page Program: 1.0 ms (xxH*(0.1 ms)  
Typical Time-out for Sector Erase/Block Erase: 18 ms  
20FH  
210H  
211H  
A31:A24  
A7:A0  
12H  
23H  
46H  
Typical time-out for Sector/Block-Erase is in ms. Represented by conversion  
of the actual time from the decimal to hexadecimal number.  
Typical Time-out for Chip Erase: 35 ms  
Typical time-out for Chip Erase is in ms. Represented by conversion of the  
actual time from the decimal to hexadecimal number.  
Maximum Time-out for Byte Program: 70 µs  
Typical time-out for Byte Program is in µs. Represented by conversion of the  
actual time from the decimal to hexadecimal number.  
A15:A8  
212H  
213H  
A23:A16  
A31:A24  
FFH  
0FH  
Reserved. Bits default to all 1’s.  
Maximum Time-out for Page Program: 1.5 ms  
Typical time-out for Page Program in xxH*(0.1 ms) ms  
Maximum Time-out for Sector Erase/Block Erase: 25 ms  
Maximum time-out for Sector/Block Erase in ms  
214H  
215H  
216H  
A7:A0  
A15:A8  
A23:A16  
19H  
32H  
0FH  
Maximum Time-out for Chip Erase: 50 ms.  
Maximum time-out for Chip Erase in ms.  
Maximum Time-out for Program Security ID: 1.5 ms  
Maximum time-out for Program Security ID in xxH*(0.1 ms) ms  
Maximum Time-out for Write Protection Enable Latency: 25 ms  
Maximum time-out for Write Protection Enable Latency is in ms. Repre-  
sented by conversion of the actual time from the decimal to hexadecimal  
number.  
217H  
218H  
A31:A24  
A7:A0  
19H  
19H  
Maximum Time-out for Write Suspend Latency: 25 µs  
Maximum time-out for Write Suspend Latency is in µs. Represented by con-  
version of the actual time from the decimal to hexadecimal number.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 69  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 12 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
Maximum Time to Deep Power-Down  
3 µs = 03H  
219H  
21AH  
A15:A8  
03H  
0AH  
Maximum Time-out from Deep Power-Down mode to Standby mode  
10 µs = 0AH  
A23:A16  
21BH  
21CH  
21DH  
21EH  
21FH  
A31:A24  
A7:A0  
FFH  
FFH  
FFH  
FFH  
FFH  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
A15:A8  
A23:A16  
A31:A24  
Supported Instructions  
220H  
221H  
222H  
223H  
224H  
225H  
226H  
227H  
228H  
229H  
22AH  
22BH  
22CH  
22DH  
22EH  
22FH  
230H  
231H  
232H  
233H  
234H  
235H  
236H  
237H  
238H  
239H  
23AH  
23BH  
A7:A0  
A15:A8  
A23:A16  
A31:A24  
A7:A0  
00H  
66H  
99H  
38H  
FFH  
05H  
01H  
35H  
06H  
04H  
02H  
32H  
B0H  
30H  
FFH  
FFH  
FFH  
FFH  
FFH  
88H  
A5H  
85H  
C0H  
9FH  
AFH  
5AH  
B9H  
ABH  
No Operation  
Reset Enable  
Reset Memory  
Enable Quad I/O  
Reset Quad I/O  
A15:A8  
A23:A16  
A31:A24  
A7:A0  
Read STATUS Register  
Write STATUS Register  
Read Configuration Register  
Write Enable  
A15:A8  
A23:A16  
A31:A24  
A7:A0  
Write Disable  
Byte Program or Page Program  
SPI Quad Page Program  
Suspends Program/Erase  
Resumes Program/Erase  
Reserved  
A15:A8  
A23:A16  
A31:A24  
A7:A0  
Reserved  
Reserved  
A15:A8  
A23:A16  
A31:A24  
A7:A0  
Reserved  
Reserved  
Read Security ID  
Program User Security ID Area  
Lockout Security ID Programming  
Set Burst Length  
JEDEC-ID  
A15:A8  
A23:A16  
A31:A24  
A7:A0  
Quad J-ID  
A15:A8  
A23:A16  
A31:A24  
SFDP  
Deep Power-Down Mode  
Release Deep Power-Down Mode  
(1-4-4) SPI nB Burst with Wrap Number of Wait states (dummy clocks)  
needed before valid output  
A4:A0  
00110b: 6 clocks of dummy cycle  
23CH  
23DH  
06H  
(1-4-4) SPI nB Burst with Wrap Number of Mode Bits  
000b: Set Mode bits are not supported  
A7:A5  
A15:A8  
ECH  
(1-4-4) SPI nB Burst with Wrap Opcode  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 70  
SST26VF040A  
TABLE 11-1: SERIAL FLASH DISCOVERABLE PARAMETER (SFDP) (SHEET 13 OF 13)  
Bit  
Address  
Address  
Data  
Comments  
(4-4-4) SQI nB Burst with Wrap Number of Wait states (dummy clocks)  
needed before valid output  
00110b: 6 clocks of dummy cycle  
A20:A16  
23EH  
23FH  
06H  
0CH  
A23:A21  
A31:A24  
000b: Set Mode bits are not supported  
(4-4-4) SQI nB Burst with Wrap Opcode  
(1-1-1) Read Memory Number of Wait states (dummy clocks) needed  
before valid output  
A4:A0  
00000b: Wait states/dummy clocks are not supported  
240H  
241H  
242H  
00H  
03H  
08H  
(1-1-1) Read Memory Number of Mode Bits  
000b: Mode bits are not supported  
A7:A5  
A15:A8  
(1-1-1) Read Memory Opcode  
(1-1-1) Read Memory at Higher Speed Number of Wait states (dummy  
clocks) needed before valid output  
01000: 8 clocks (8 bits) of dummy cycle  
A20:A16  
(1-1-1) Read Memory at Higher Speed Number of Mode Bits  
000b: Mode bits are not supported  
A23:A21  
243H  
244H  
245H  
246H  
247H  
248H  
A31:A24  
A7:A0  
0BH  
FFH  
FFH  
FFH  
FFH  
FFH  
(1-1-1) Read Memory at Higher Speed Opcode  
Reserved. Bits default to all 1’s.  
A15:A8  
A23:A16  
A31:A24  
A7:A0  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
Security ID size in bytes  
Example: If the size is 2 Kbytes, this field would be 07FFH  
Security ID Range  
249H  
A15:A8  
07H  
Unique ID  
0000H-000FH  
(preprogrammed at factory)  
User-programmable  
0010H-07FFH  
24AH  
24BH  
A23:A16  
A31:A24  
FFH  
FFH  
Reserved. Bits default to all 1’s.  
Reserved. Bits default to all 1’s.  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 71  
Note the following details of the code protection feature on Microchip devices:  
Microchip products meet the specifications contained in their particular Microchip Data Sheet.  
Microchip believes that its family of products is secure when used in the intended manner and under normal conditions.  
There are dishonest and possibly illegal methods being used in attempts to breach the code protection features of the Microchip  
devices. We believe that these methods require using the Microchip products in a manner outside the operating specifications  
contained in Microchip's Data Sheets. Attempts to breach these code protection features, most likely, cannot be accomplished  
without violating Microchip's intellectual property rights.  
Microchip is willing to work with any customer who is concerned about the integrity of its code.  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not  
mean that we are guaranteeing the product is "unbreakable." Code protection is constantly evolving. We at Microchip are  
committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection  
feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or  
other copyrighted work, you may have a right to sue for relief under that Act.  
Information contained in this publication is provided for the sole  
purpose of designing with and using Microchip products. Infor-  
mation regarding device applications and the like is provided  
only for your convenience and may be superseded by updates.  
It is your responsibility to ensure that your application meets  
with your specifications.  
Trademarks  
The Microchip name and logo, the Microchip logo, Adaptec,  
AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, chipKIT,  
chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex,  
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trademarks of Microchip Technology Incorporated in the U.S.A. and  
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THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS".  
MICROCHIP MAKES NO REPRESENTATIONS OR WAR-  
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RELATED TO THE INFORMATION INCLUDING BUT NOT  
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IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDI-  
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resulting from such use. No licenses are conveyed, implicitly or  
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simpleMAP, SimpliPHY, SmartBuffer, SMART-I.S., storClad, SQI,  
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Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY,  
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SQTP is a service mark of Microchip Technology Incorporated in  
the U.S.A.  
The Adaptec logo, Frequency on Demand, Silicon Storage  
Technology, and Symmcom are registered trademarks of Microchip  
Technology Inc. in other countries.  
GestIC is a registered trademark of Microchip Technology Germany  
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© 2020-2021, Microchip Technology Incorporated, All Rights  
Reserved.  
For information regarding Microchip’s Quality Management Systems,  
please visit www.microchip.com/quality.  
ISBN: 978-1-5224-8560-5  
2020-2021 Microchip Technology Inc.  
DS20006292B-page 72  
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02/28/20  

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MICROCHIP

SST26VF040AT-80E/SN70SVAO

2.5V/3.0V 4-Mbit Serial Quad I/O™ (SQI™) Flash Memory

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MICROCHIP

SST26VF040AT-80E/SNVAO

2.5V/3.0V 4-Mbit Serial Quad I/O™ (SQI™) Flash Memory

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MICROCHIP