TC10723.0VCT713 [MICROCHIP]
50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass; 50毫安和百毫安CMOS LDO,具有关断,错误输出和VREF旁路型号: | TC10723.0VCT713 |
厂家: | MICROCHIP |
描述: | 50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass |
文件: | 总22页 (文件大小:712K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TC1072/TC1073
50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass
Features:
General Description
• 50 µA Ground Current for Longer Battery Life
• Very Low Dropout Voltage
The TC1072 and TC1073 are high accuracy (typically
±0.5%) CMOS upgrades for older (bipolar) low dropout
regulators. Designed specifically for battery-operated
systems, the devices’ CMOS construction eliminates
wasted ground current, significantly extending battery
life. Total supply current is typically 50 µA at full load
(20 to 60 times lower than in bipolar regulators).
• Choice of 50 mA (TC1072) and 100 mA (TC1073)
Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
The devices’ key features include ultra low noise
operation (plus optional Bypass input); very low
dropout voltage (typically 85 mV, TC1072 and 180 mV,
TC1073 at full load) and fast response to step changes
in load. An error output (ERROR) is asserted when the
devices are out-of-regulation (due to a low input
voltage or excessive output current). ERROR can be
used as a low battery warning or as a processor
RESET signal (with the addition of an external RC
network). Supply current is reduced to 0.5 µA (max)
and both VOUT and ERROR are disabled when the
shutdown input is low. The devices incorporate both
overtemperature and overcurrent protection.
• ERROR Output Can Be Used as a Low Battery
Detector or Processor Reset Generator
• Bypass Input for Ultra Quiet Operation
• Overcurrent and Overtemperature Protection
• Space-Saving 6-Pin SOT-23 Package
• Pin Compatible Upgrades for Bipolar Regulators
• Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 3.6V, 4.0V, 5.0V
• Other output voltages are available. Please
contact Microchip Technology Inc. for details.
The TC1072 and TC1073 are stable with an output
capacitor of only 1 µF and have a maximum output
current of 50 mA, and 100 mA, respectively. For higher
output current versions, please see the TC1185,
TC1186, TC1187 (IOUT = 150 mA) and TC1107,
TC1108 and TC1173 (IOUT = 300 mA) data sheets.
Applications:
• Battery Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
• Cellular/GSM/PHS Phones
• Linear Post-Regulators for SMPS
• Pagers
Package Type
6-Pin SOT-23
VOUT Bypass ERROR
Typical Application Circuit
5
6
4
R
P
1
2
6
5
V
V
V
V
OUT
IN
IN
OUT
+
TC1072
TC1073
1 µF
GND
Bypass
C
3
1
BYPASS
470 pF
2
VIN
GND SHDN
3
4
ERROR
SHDN
ERROR
Shutdown Control
(from Power Control Logic)
© 2007 Microchip Technology Inc.
DS21354D-page 1
TC1072/TC1073
† Note: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage...........................(-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
VIN
IOUTMAX
Parameter
Min
2.7
Typ
Max
6.0
Units
Test Conditions
Note 9
Input Operating Voltage
Maximum Output Current
—
V
50
100
—
—
—
—
mA
mA
TC1072
TC1073
VOUT
Output Voltage
VR
–
VR ±0.5% VR + 2.5%
V
Note 1
2.5%
TCVOUT
VOUT Temperature Coefficient
—
—
20
40
—
—
ppm/°C Note 2
ΔVOUT/ΔVIN Line Regulation
ΔVOUT/VOUT Load Regulation
—
—
0.05
0.5
0.35
2.0
%
%
(VR + 1V) ≤ VIN ≤ 6V
IL = 0.1 mA to IOUTMAX
(Note 3)
VIN-VOUT
Dropout Voltage
—
—
—
—
2
65
85
180
—
—
120
250
mV
IL = 0.1 mA
IL = 20 mA
IL = 50 mA
IL = 100 mA (Note 4),
TC1073
IIN
Supply Current
—
—
—
—
—
—
—
—
50
0.05
64
80
0.5
—
µA
µA
SHDN = VIH, IL = 0 (Note 8)
SHDN = 0V
IINSD
PSRR
IOUTSC
ΔVOUT/ΔPD
TSD
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
dB
FRE ≤ 1 kHz
300
0.04
160
10
450
—
mA
V/W
°C
VOUT = 0V
Notes 5, 6
Thermal Shutdown Die Temperature
Thermal Shutdown Hysteresis
Output Noise
—
ΔTSD
eN
—
°C
260
—
nV/√Hz IL = IOUTMAX
470 pF from Bypass to GND
Note 1:
2:
V is the regulator output voltage setting. For example: V = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
R R
6
TC V
= (VOUTMAX – VOUTMIN) x 10
OUT
V
x ΔT
OUT
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at V = 6V for T = 10 ms.
IN
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T , T , θ ). Exceeding the maximum allowable power dissipation causes the device to initiate
A
J
JA
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
7: Hysteresis voltage is referenced by V .
R
8: Apply for Junction Temperatures of -40°C to +85°C.
9:
The minimum V has to justify the conditions = V ≥ V + V
and V ≥ 2.7V for I = 0.1 mA to I
.
OUTMAX
IN
IN
R
DROPOUT
IN
L
DS21354D-page 2
© 2007 Microchip Technology Inc.
TC1072/TC1073
TC1072/TC1073 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise noted, VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = +25°C.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
SHDN Input
VIH
VIL
SHDN Input High Threshold
SHDN Input Low Threshold
45
—
—
—
—
%VIN
%VIN
VIN = 2.5V to 6.5V
15
VIN = 2.5V to 6.5V
ERROR Open Drain Output
VINMIN Minimum VIN Operating Voltage
VOL
1.0
—
—
—
—
—
—
—
400
—
V
Output Logic Low Voltage
ERROR Threshold Voltage
ERROR Positive Hysteresis
VOUT to ERROR Delay
mV
V
1 mA Flows to ERROR
See Figure 4-2
Note 7
VTH
0.95 x VR
50
VHYS
tDELAY
—
mV
ms
2.5
—
Vout falling from VR to
VR-10%
Note 1:
2:
V is the regulator output voltage setting. For example: V = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
R R
6
TC V
= (VOUTMAX – VOUTMIN) x 10
OUT
V
x ΔT
OUT
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at V = 6V for T = 10 ms.
IN
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T , T , θ ). Exceeding the maximum allowable power dissipation causes the device to initiate
A
J
JA
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
7: Hysteresis voltage is referenced by V .
R
8: Apply for Junction Temperatures of -40°C to +85°C.
9:
The minimum V has to justify the conditions = V ≥ V + V
and V ≥ 2.7V for I = 0.1 mA to I
.
OUTMAX
IN
IN
R
DROPOUT
IN
L
© 2007 Microchip Technology Inc.
DS21354D-page 3
TC1072/TC1073
2.0
TYPICAL CHARACTERISTICS CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Dropout Voltage vs. Temperature (V
= 10mA
= 3.3V)
OUT
Dropout Voltage vs. Temperature (V
= 3.3V)
OUT
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
0.100
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.000
I
LOAD
I
= 50mA
LOAD
C
C
= 1μF
IN
OUT
C
C
= 1μF
IN
OUT
= 1μF
= 1μF
-40
-20
0
20
50
70
125
-40
-20
0
20
50
70
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Dropout Voltage vs. Temperature (V
OUT
= 3.3V)
Dropout Voltage vs. Temperature (V
= 3.3V)
0.200
0.180
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
OUT
0.300
0.250
0.200
0.150
0.100
0.050
0.000
I
= 100mA
LOAD
I
= 150mA
LOAD
C
C
= 1μF
C
C
= 1μF
IN
OUT
IN
OUT
= 1μF
= 1μF
-40
-20
0
20
50
70
125
-40
-20
0
20
50
70
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Ground Current vs. V (V
IN OUT
= 3.3V)
Ground Current vs. V (V
IN OUT
= 3.3V)
90
90
80
70
60
50
40
30
20
10
0
I
= 100mA
LOAD
I
= 10mA
LOAD
80
70
60
50
40
30
20
10
0
C
C
= 1μF
= 1μF
IN
C
C
= 1μF
OUT
IN
= 1μF
OUT
0 0.5 1 1.5
2
2.5
3
3.5 4 4.5
(V)
5 5.5 6 6.5 7 7.5
0
0.5 1 1.5
2
2.5
3
3.5 4 4.5
(V)
5 5.5 6 6.5 7 7.5
V
IN
V
IN
DS21354D-page 4
© 2007 Microchip Technology Inc.
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
V
vs.
V
(V = 3.3V)
OUT
IN OUT
Ground Current vs. V (V
IN OUT
= 3.3V)
3.5
3
80
70
60
50
40
30
20
10
0
I
= 0
LOAD
I
= 150mA
LOAD
2.5
2
1.5
1
C
OUT
= 1μF
0.5
0
IN
C
C
= 1μF
IN
OUT
C
= 1μF
= 1μF
0 0.5 1 1.5
2
2.5
3
3.5 4 4.5 5 5.5 6 6.5 7 7.5
0
0.5 1 1.5
2
2.5
3
3.5
(V)
4
4.5
5
5.5
6
6.5
7
V
V
(V)
(V
IN
V
IN
V
vs.
= 3.3V)
Output Voltage vs. Temperature (V
= 3.3V)
OUT
IN OUT
OUT
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.320
3.315
3.310
3.305
3.300
3.295
3.290
3.285
3.280
3.275
I
= 100mA
I
= 10mA
LOAD
LOAD
C
C
V
= 1μF
IN
OUT
IN
= 1μF
C
C
= 1μF
IN
OUT
= 4.3V
= 1μF
0
0.5
1
1.5
2
2.5
3
3.5
(V)
4
4.5
5
5.5
6
6.5
7
-40
-20
-10
0
20
40
85
125
V
TEMPERATURE (°C)
IN
Output Voltage vs. Temperature (V
= 3.3V)
OUT
3.290
3.288
3.286
3.284
3.282
3.280
3.278
3.276
3.274
I
= 150mA
LOAD
C
C
V
= 1μF
IN
OUT
IN
= 1μF
= 4.3V
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
© 2007 Microchip Technology Inc.
DS21354D-page 5
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Output Voltage vs. Temperature (V
= 10mA
= 5V)
Output Voltage vs. Temperature (V
= 150mA
= 5V)
OUT
OUT
4.994
4.992
4.990
4.988
4.986
4.984
4.982
4.980
4.978
4.976
4.974
5.025
5.020
5.015
5.010
5.005
5.000
4.995
4.990
4.985
I
I
LOAD
LOAD
V
C
C
= 6V
V
C
C
= 6V
IN
IN
IN
IN
= 1μF
= 1μF
= 1μF
= 1μF
OUT
OUT
-40
-20
-10
0
20
40
85
125
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Temperature vs. Quiescent Current (V
OUT
= 5V)
Temperature vs. Quiescent Current (V
OUT
= 5V)
80
70
60
50
40
30
20
10
0
I
= 150mA
LOAD
I
= 10mA
70
60
50
40
30
20
10
0
LOAD
V
C
C
= 6V
IN
= 1μF
IN
OUT
V
= 6V
IN
IN
= 1μF
C
= 1μF
C
= 1μF
OUT
-40
-20
-10
0
20
40
85
125
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
TEMPERATURE (°C)
Output Noise vs. Frequency
Stability Region vs. Load Current
= 1μF
Power Supply Rejection Ratio
= 10mA
1000
-30
10.0
1.0
C
I
OUT
to 10μF
OUT
R
C
C
C
= 50Ω
LOAD
= 1μF
IN
-35
-40
-45
V
V
V
= 4V
IN
IN
OUT
IN
OUT
DC
AC
OUT
= 100mV
= 3V
p-p
= 1μF
= 0
100
10
1
BYP
C
C
= 0
= 1μF
-50
-55
Stable Region
-60
-65
-70
-75
-80
0.1
0.0
0.1
0.01
0.1K
1K
10K
1000K
100K
0.01K
0.01K 0.1K
10
1K
10K 100K 1000K
0
20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
FREQUENCY (Hz)
FREQUENCY (Hz)
DS21354D-page 6
© 2007 Microchip Technology Inc.
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 3.3V LDO with Bypass Capacitor
Measure Rise Time of 3.3V LDO without Bypass Capacitor
Conditions: C = 1μF, C
IN OUT
= 1μF, C
BYP
= 470pF, I = 100mA
LOAD
Conditions: C = 1μF, C
IN OUT
= 1μF, C
BYP
= 0pF, I = 100mA
LOAD
V
= 4.3V, Temp = 25°C, Rise Time = 448μS
IN
V
= 4.3V, Temp = 25°C, Rise Time = 184μS
IN
V
SHDN
V
SHDN
V
OUT
V
OUT
Measure Fall Time of 3.3V LDO with Bypass Capacitor
Measure Fall Time of 3.3V LDO without Bypass Capacitor
Conditions: C = 1μF, C
IN OUT
= 1μF, C
BYP
= 470pF, I = 50mA
LOAD
Conditions: C = 1μF, C
IN OUT
= 1μF, C
BYP
= 0pF, I = 100mA
LOAD
V
= 4.3V, Temp = 25°C, Fall Time = 100μS
IN
V
= 4.3V, Temp = 25°C, Fall Time = 52μS
IN
V
SHDN
V
SHDN
V
OUT
V
OUT
© 2007 Microchip Technology Inc.
DS21354D-page 7
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Measure Rise Time of 5.0V LDO with Bypass Capacitor
Measure Rise Time of 5.0V LDO without Bypass Capacitor
Conditions: C = 1μF, C
IN OUT
= 1μF, C
BYP
= 470pF, I = 100mA
LOAD
Conditions: C = 1μF, C
IN OUT
= 1μF, C
BYP
= 0pF, I = 100mA
LOAD
V
= 6V, Temp = 25°C, Rise Time = 390μS
IN
V
= 6V, Temp = 25°C, Rise Time = 192μS
IN
V
SHDN
V
SHDN
V
OUT
V
OUT
Measure Fall Time of 5.0V LDO with Bypass Capacitor
Measure Fall Time of 5.0V LDO without Bypass Capacitor
Conditions: C = 1μF, C
IN OUT
= 1μF, C
BYP
= 470pF, I = 50mA
LOAD
Conditions: C = 1μF, C
IN OUT
= 1μF, C
BYP
= 0pF, I = 100mA
LOAD
V
= 6V, Temp = 25°C, Fall Time = 167μS
IN
V
= 6V, Temp = 25°C, Fall Time = 88μS
IN
V
SHDN
V
SHDN
V
OUT
V
OUT
DS21354D-page 8
© 2007 Microchip Technology Inc.
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Load Regulation of 3.3V LDO
Load Regulation of 3.3V LDO
Conditions: C = 1μF, C
= 2.2μF, C = 470pF,
BYP
Conditions: C = 1μF, C
= 2.2μF, C = 470pF,
BYP
IN
OUT
+ 0.25V, Temp = 25°C
OUT
IN
OUT
+ 0.25V, Temp = 25°C
OUT
V
= V
V
= V
IN
IN
I
= 100mA switched in at 10kHz, V
is AC coupled
OUT
I
= 50mA switched in at 10kHz, V is AC coupled
OUT
LOAD
LOAD
I
I
LOAD
LOAD
V
V
OUT
OUT
Line Regulation of 3.3V LDO
Load Regulation of 3.3V LDO
Conditions: V = 4V, + 1V Squarewave @ 2.5kHz
IN
Conditions: C = 1μF, C
IN OUT
= 2.2μF, C = 470pF,
BYP
V
= V + 0.25V, Temp = 25°C
IN
OUT
I
= 150mA switched in at 10kHz, V
is AC coupled
OUT
LOAD
V
IN
I
LOAD
V
OUT
V
OUT
C
I
= 0μF, C
LOAD
= 1μF, C
IN
= 470pF,
IN
OUT
BYP
are AC coupled
OUT
= 100mA, V & V
© 2007 Microchip Technology Inc.
DS21354D-page 9
TC1072/TC1073
Note: Unless otherwise specified, all parts are measured at temperature = +25°C.
Line Regulation of 5.0V LDO
Thermal Shutdown Response of 5.0V LDO
Conditions: V = 6V, + 1V Squarewave @ 2.5kHz
IN
Conditions: V = 6V, C = 0μF, C
IN IN
= 1μF
OUT
V
IN
V
OUT
V
OUT
C
I
= 0μF, C
LOAD
= 1μF, C
IN OUT
= 470pF,
are AC coupled
IN
OUT BYP
= 100mA, V & V
ILOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
DS21354D-page 10
© 2007 Microchip Technology Inc.
TC1072/TC1073
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Symbol
Pin No.
(6-Pin SOT-23)
Description
1
2
3
4
5
6
VIN
Unregulated supply input.
GND
Ground terminal.
SHDN
ERROR
Bypass
VOUT
Shutdown control input.
Out-of-Regulation Flag. (Open drain output).
Reference bypass input.
Regulated voltage output.
3.1
Input Voltage Supply (VIN)
3.4
Out-Of-Regulation Flag (ERROR)
Connect unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is
necessary for proper operation. A 1 µF capacitor
connected from VIN to ground is recommended for
most applications.
ERROR goes low when VOUT is out-of-tolerance by
approximately – 5%.
3.5
Reference Bypass Input (Bypass)
Connecting a 470 pF to this input further reduces
output noise.
3.2
Ground (GND)
3.6
Regulated Voltage Output (VOUT)
Connect the unregulated input supply ground return to
GND. Also connect the negative side of the 1 µF typical
input decoupling capacitor close to GND and the
negative side of the output capacitor COUT to GND.
Connect the output load to VOUT of the LDO. Also
connect the positive side of the LDO output capacitor
as close as possible to the VOUT pin.
3.3
Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to SHDN. During shutdown,
output voltage falls to zero, ERROR is open-circuited
and supply current is reduced to 0.5 µA (maximum).
© 2007 Microchip Technology Inc.
DS21354D-page 11
TC1072/TC1073
4.0
DETAILED DESCRIPTION
The TC1072 and TC1073 are precision fixed output
voltage regulators. (If an adjustable version is desired,
please see the TC1070/TC1071/TC1187 data sheet.)
Unlike bipolar regulators, the TC1072 and TC1073’s
supply current does not increase with load current. In
addition, VOUT remains stable and within regulation
over the entire 0 mA to IOUTMAX load current range, (an
important consideration in RTC and CMOS RAM
battery back-up applications).
V
OUT
HYSTERESIS (V )
H
V
TH
t
DELAY
ERROR
V
IH
V
OL
Figure 4-1 shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below VIL. SHDN may be
controlled by a CMOS logic gate, or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05 µA
(typical), VOUT falls to zero volts, and ERROR is open-
circuited.
FIGURE 4-2:
Error Output Operation.
4.2
Output Capacitor
A 1 µF (minimum) capacitor from VOUT to ground is
recommended. The output capacitor should have an
effective series resistance greater than 0.1Ω and less
than 5.0Ω, and a resonant frequency above 1 MHz. A
1 µF capacitor should be connected from VIN to GND if
there is more than 10 inches of wire between the
regulator and the AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used. (Since many
V
V
V
OUT
IN
OUT
+
1 μF
+
+
TC1072
TC1073
1 μF
C1
Battery
aluminum
approximately
electrolytic
-30°C,
capacitors
freeze
at
are
GND
Bypass
solid tantalums
C3, 470 pF
recommended for applications operating below -25°C.)
When operating from sources other than batteries,
supply-noise rejection and transient response can be
improved by increasing the value of the input and
output capacitors and employing passive filtering
techniques.
V+
SHDN
ERROR
R1
1M
Shutdown Control
(to CMOS Logic or Tie
to V if unused)
IN
C2 Required Only
if ERROR is used as a
Processor RESET Signal
(See Text)
BATTLOW
or RESET
0.2 μF
C2
4.3
Bypass Input
A 470 pF capacitor connected from the Bypass input to
ground reduces noise present on the internal
reference, which in turn significantly reduces output
noise. If output noise is not a concern, this input may be
left unconnected. Larger capacitor values may be
used, but results in a longer time period to rated output
voltage when power is initially applied.
FIGURE 4-1:
Typical Application Circuit.
4.1
ERROR Open-Drain Output
ERROR is driven low whenever VOUT falls out of
regulation by more than –5% (typical). This condition
may be caused by low input voltage, output current
limiting, or thermal limiting. The ERROR output voltage
value (e.g. ERROR = VOL at 4.75V (typical) for a 5.0V
regulator and 2.85V (typical) for a 3.0V regulator).
ERROR output operation is shown in Figure 4-2.
Note that ERROR is active tDELAY (typically, 2.5 µs)
after VOUT falls to VTH, and inactive when VOUT rises
above VTH by VHYS
.
As shown in Figure 4-1, ERROR can be used as a
battery low flag, or as a processor RESET signal (with
the addition of timing capacitor C2). R1 x C2 should be
chosen to maintain ERROR below VIH of the processor
RESET input for at least 200 ms to allow time for the
system to stabilize. Pull-up resistor R1 can be tied to
VOUT, VIN or any other voltage less than (VIN + 0.3V).
DS21354D-page 12
© 2007 Microchip Technology Inc.
TC1072/TC1073
Equation 5-1 can be used in conjunction with
Equation 5-2 to ensure regulator thermal operation is
within limits. For example:
5.0
5.1
THERMAL CONSIDERATIONS
Thermal Shutdown
Given:
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
VINMAX
VOUTMIN
ILOADMAX
TJMAX
= 3.0V ±5%
= 2.7V – 2.5%
= 40 mA
= 125°C
5.2
Power Dissipation
TAMAX
= 55°C
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst-case actual power dissipation:
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
= [(3.0 x 1.05) – (2.7 x 0.975)] x 40 x 10–3
= 20.7 mW
EQUATION 5-1:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
Maximum allowable power dissipation:
Where:
PD = Worst-case actual power dissipation
PDMAX = (TJMAX – TAMAX
)
= Maximum voltage on VIN
VINMAX
θJA
= (125 – 55)
220
VOUTMIN = Minimum regulator output voltage
ILOADMAX = Maximum output (load) current
= 318 mW
The
maximum
allowable
power
dissipation
In this example, the TC1072 dissipates a maximum of
20.7 mW; below the allowable limit of 318 mW. In a
similar manner, Equation 5-1 and Equation 5-2 can be
used to calculate maximum current and/or input
voltage limits.
(Equation 5-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die tem-
perature (TJMAX) and the thermal resistance from junc-
tion-to-air (θJA). The 6-Pin SOT-23 package has a θJA
of approximately 220°C/Watt.
5.3
Layout Considerations
EQUATION 5-2:
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower θJA and therefore
increase the maximum allowable power dissipation
limit.
PDMAX = (TJMAX – TAMAX
)
θJA
where all terms are previously defined.
© 2007 Microchip Technology Inc.
DS21354D-page 13
TC1072/TC1073
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
1
2
&
= part number code + threshold voltage
(two-digit code)
TC1072
Code
TC1073
Code
(V)
1.8
2.5
2.6
2.7
2.8
EY
E1
ET
E2
EZ
E8
E3
E4
E9
E0
E6
FY
F1
FT
F2
FZ
F8
F3
F4
F9
F0
F6
2.85
3.0
3.3
3.6
4.0
5.0
3
4
represents year and quarter code
represents production lot ID code
6.2
Taping Form
User Direction of Feed
Device
Marking
W, Width of
Carrier Tape
PIN 1
PIN 1
P,Pitch
Standard Reel Component
Orientation
Reverse Reel Component
Orientation
Carrier Tape, Number of Components per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
6-Pin SOT-23
8 mm
4 mm
3000
7 in
DS21354D-page 14
© 2007 Microchip Technology Inc.
TC1072/TC1073
6-Lead Plastic Small Outline Transistor (CH) [SOT-23]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
4
N
E
E1
PIN 1 ID BY
LASER MARK
1
2
3
e
e1
D
c
A
φ
A2
L
A1
L1
Units
MILLIMETERS
Dimension Limits
MIN
NOM
MAX
Number of Pins
Pitch
N
e
6
0.95 BSC
Outside Lead Pitch
Overall Height
e1
A
1.90 BSC
0.90
0.89
0.00
2.20
1.30
2.70
0.10
0.35
0°
–
–
–
–
–
–
–
–
–
–
–
1.45
1.30
0.15
3.20
1.80
3.10
0.60
0.80
30°
Molded Package Thickness
Standoff
A2
A1
E
Overall Width
Molded Package Width
Overall Length
Foot Length
E1
D
L
Footprint
L1
φ
Foot Angle
Lead Thickness
Lead Width
c
0.08
0.20
0.26
0.51
b
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-028B
© 2007 Microchip Technology Inc.
DS21354D-page 15
TC1072/TC1073
NOTES:
DS21354D-page 16
© 2007 Microchip Technology Inc.
TC1072/TC1073
APPENDIX A: REVISION HISTORY
Revision D (February 2007)
• Page 1: Ground current changed to 50 µA.
• Package type changed from SOT-23A to SOT-23.
• Added voltage options.
• TDELAY added to Table 1-1.
• Section 3.0 “Pin Descriptions”: Added pin
descriptions.
• Section 4.1 “ERROR Open-Drain Output”:
Defined tDELAY
.
• Changed Figure 4-2.
• Updated Packaging Information.
Revision C (January 2006)
• Undocumented changes.
Revision B (May 2002)
• Undocumented changes.
Revision A (March 2002)
• Original Release of this Document.
© 2007 Microchip Technology Inc.
DS21354D-page 17
TC1072/TC1073
NOTES:
DS21354D-page 18
© 2007 Microchip Technology Inc.
TC1072/TC1073
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
—
X.X
X
XXXXX
Examples:
Threshold Temperature Package
Voltage
a)
b)
c)
d)
e)
f)
g)
h)
i)
TC1072-1.8VCH713: 1.8V
Range
TC1072-2.5VCH713 2.5V
TC1072-2.6VCH713 2.6V
TC1072-2.7VCH713 2.7V
TC1072-2.8VCH713 2.8V
TC1072-2.85VCH713 2.85V
TC1072-3.0VCH713 3.0V
TC1072-3.3VCH713 3.3V
TC1072-3.6VCH713 3.6V
TC1072-4.0VCH713 4.0V
TC1072-5.0VCH713 5.0V
Device
TC1072: CMOS LDO with Shutdown, ERROR Output & V
REF
REF
Bypass
TC1073: CMOS LDO with Shutdown, ERROR Output & V
Bypass
j)
k)
Threshold voltage
(typical)
1.8
2.5
2.6
2.7
2.8
2.85
3.0
3.3
3.6
4.0
5.0
=
=
=
=
=
=
=
=
=
=
=
1.8V
2.5V
2.6V
2.7V
2.8V
2.85V
3.0V
3.3V
3.6V
4.0V
5.0V
a)
b)
c)
d)
e)
f)
g)
h)
i)
TC1073-1.8VCH713: 1.8V
TC1073-2.5VCH713 2.5V
TC1073-2.6VCH713 2.6V
TC1073-2.7VCH713 2.7V
TC1073-2.8VCH713 2.8V
TC1073-2.85VCH713 2.85V
TC1073-3.0VCH713 3.0V
TC1073-3.3VCH713 3.3V
TC1073-3.6VCH713 3.6V
TC1073-4.0VCH713 4.0V
TC1073-5.0VCH713 5.0V
j)
k)
Temperature Range
Package
V
= -40° C to +125° C
CH713 = Plastic small outline transistor (CH) SOT-23,
6 lead, (tape and reel).
© 2007 Microchip Technology Inc.
DS21354D-page 19
TC1072/TC1073
NOTES:
DS21354D-page 20
© 2007 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC,
PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, Migratable
Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,
MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2007, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its PIC®
MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial
EEPROMs, microperipherals, nonvolatile memory and analog
products. In addition, Microchip’s quality system for the design and
manufacture of development systems is ISO 9001:2000 certified.
© 2007 Microchip Technology Inc.
DS21354D-page 21
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
Asia Pacific Office
Suites 3707-14, 37th Floor
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Tel: 852-2401-1200
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Tel: 91-80-4182-8400
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Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
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Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
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Tel: 45-4450-2828
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12/08/06
DS21354D-page 22
© 2007 Microchip Technology Inc.
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