TC110333ECTTR [MICROCHIP]
0.1 A SWITCHING CONTROLLER, 345 kHz SWITCHING FREQ-MAX, PDSO5, SOT-23, 5 PIN;
| 型号： | TC110333ECTTR |
| 厂家： | 
MICROCHIP |
| 描述： | 0.1 A SWITCHING CONTROLLER, 345 kHz SWITCHING FREQ-MAX, PDSO5, SOT-23, 5 PIN 稳压器 开关式稳压器或控制器 电源电路 开关式控制器 光电二极管 |
| 文件： | 总16页 (文件大小：466K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC110
PFM/PWM Step-Up DC/DC Controller
Features
General Description
• Assured Start-up at 0.9V
The TC110 is a step-up (Boost) switching controller
that furnishes output currents of up to 300mA while
delivering a typical efficiency of 84%. The TC110
normally operates in pulse width modulation mode
(PWM), but automatically switches to pulse frequency
modulation (PFM) at low output loads for greater
efficiency. Supply current draw for the 100kHz version
is typically only 50µA, and is reduced to less than
0.5µA when the SHDN input is brought low. Regulator
operation is suspended during shutdown. The TC110
accepts input voltages from 2.0V to 10.0V, with a
guaranteed start-up voltage of 0.9V.
• 50µA (Typ) Supply Current (f
• 300mA Output Current @ V ≥ 2.7V
• 0.5µA Shutdown Mode
• 100kHz and 300kHz Switching Frequency
Options
= 100kHz)
OSC
IN
• Programmable Soft-Start
• 84% Typical Efficiency
• Small Package: 5-Pin SOT-23A
Applications
The TC110 is available in a small 5-Pin SOT-23A
package, occupies minimum board space and uses
small external components (the 300kHz version allows
for less than 5mm surface-mount magnetics).
• Palmtops
• Battery-Operated Systems
• Positive LCD Bias Generators
• Portable Communicators
Functional Block Diagram
Device Selection Table
+
+
Battery
10µF
D1
IN5817
47µH
3V
Output
Voltage
(V)*
Osc.
Freq.
(kHz)
Operating
Temp.
Range
–
Part
Number
V
Package
OUT
Si9410DY
+
47µF
Tantalum
TC110501ECT
TC110331ECT
TC110301ECT
TC110503ECT
TC110333ECT
TC110303ECT
5.0
3.3
3.0
5.0
3.3
3.0
5-Pin SOT-23A 100 -40°C to +85°C
5-Pin SOT-23A 100 -40°C to +85°C
5-Pin SOT-23A 100 -40°C to +85°C
5-Pin SOT-23A 300 -40°C to +85°C
5-Pin SOT-23A 300 -40°C to +85°C
5-Pin SOT-23A 300 -40°C to +85°C
5
4
EXT
GND
TC110
V
V
SHDN/SS
3
OUT
DD
1
2
*Other output voltages are available. Please contact
Microchip Technology Inc. for details.
R
OFF
ON
C
Package Type
*RC Optional
3V to 5V Supply
5-Pin SOT-23A
EXT
5
GND
4
TC110
1
2
3
V
V
SHDN/SS
OUT
DD
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ SC-74A
2002 Microchip Technology Inc.
DS21355B-page 1
TC110
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Voltage on V , V
, SHDN Pins ........ -0.3V to +12V
DD OUT
EXT Output Current ...................................±100mA pk
Voltage on EXT Pin ........................-0.3V to V +0.3V
DD
Power Dissipation.............................................150mW
Operating Temperature Range.............-40°C to +85°C
Storage Temperature Range ..............-40°C to +125°C
TC110 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Note 1, VIN = 0.6 x VR, VDD = VOUT, TA = 25°C, unless otherwise noted.
Symbol
VDD
VSTART
Parameter
Min
Typ
Max Units
Test Conditions
Operating Supply Voltage
Start-Up Supply Voltage
2.0
—
—
—
—
10.0
0.9
V
V
V
Note 2
IOUT = 1mA
IOUT = 1mA
VHOLD-UP Oscillator Hold-Up Voltage
—
0.7
IDD
Boost Mode Supply Current
—
—
—
—
—
—
120
130
180
50
50
70
190
200
280
90
100
120
µA VOUT = SHDN = (0.95 x VR); fOSC = 300kHz; VR = 3.0V
VR = 3.3V
VR = 5.0V
fOSC = 100kHz; VR = 3.0V
V
V
R = 3.3V
R = 5.0V
ISTBY
Standby Supply Current
—
—
—
—
—
—
20
20
22
11
11
11
34
35
38
20
20
22
µA VOUT = SHDN = (VR + 0.5V); fOSC = 300kHz; VR = 3.0V
V
R = 3.3V
R = 5.0V
V
fOSC = 100kHz; VR = 3.0V
V
V
R = 3.3V
R = 5.0V
ISHDN
fOSC
Shutdown Supply Current
Oscillator Frequency
—
0.05
0.5
µA SHDN = GND, VO = (VR x 0.95)
255
85
300
100
345
115
kHz VOUT = SHDN = (0.95 x VR); fOSC = 300kHz
fOSC = 100kHz
VOUT
Output Voltage
VR
VR
VR
V
Note 3
x 0.975
x 1.025
DTYMAX Maximum Duty Cycle
(PWM Mode)
—
—
92
%
VOUT = SHDN = 0.95 x VR
DTYPFM Duty Cycle (PFM Mode)
15
0.65
—
25
—
—
35
—
%
V
IOUT = 0mA
VIH
SHDN Input Logic High
SHDN Input Logic Low
EXT ON Resistance to VDD
VOUT = (VR x 0.95)
VIL
0.20
V
VOUT = (VR x 0.95)
REXTH
—
—
—
32
29
20
47
43
29
Ω
VOUT = SHDN = (VR x 0.95); VR = 3.0V
V
R = 3.3V
VR = 5.0V
VOUT = SHDN = (VR x 0.95); VR = 3.0V
R = 3.3V
VR = 5.0V
VEXT = (VOUT – 0.4V)
REXTL
EXT ON Resistance to GND
—
—
—
20
19
13
30
27
19
Ω
V
VEXT = 0.4V
η
Efficiency
—
84
—
%
Note 1: VR = 3.0V, IOUT = 120mA
V
V
R = 3.3V, IOUT = 130mA
R = 5.0V, IOUT = 200mA
2: See Application Notes “Operating Mode” description for clarification.
3: R is the factory output voltage setting.
V
DS21355B-page 2
2002 Microchip Technology Inc.
TC110
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(5-Pin SOT-23A)
Symbol
Description
1
VOUT
Internal device power and voltage sense input. This dual function input provides both feedback
voltage sensing and internal chip power. It should be connected to the regulator output. (See
Section 4.0, Applications).
2
3
VDD
Power supply voltage input.
SHDN/SS Shutdown input. A logic low on this input suspends device operation and supply current is
reduced to less than 0.5µA. The device resumes normal operation when SHDN is again brought
high. An RC circuit connected to this input also determines the soft-start time.
4
5
GND
EXT
Ground terminal.
External switch transistor drive complimentary output. This pin drives the external switching
transistor. It may be connected to the base of the external bipolar transistor or gate of the external
N-channel MOSFET. (See Section 4.0, Applications).
2002 Microchip Technology Inc.
DS21355B-page 3
TC110
3.2
Low Power Shutdown Mode
3.0
DETAILED DESCRIPTION
The TC110 enters a low power shutdown mode when
SHDN is brought low. While in shutdown, the oscillator
is disabled and the output switch (internal or external)
is shut off. Normal regulator operation resumes when
SHDN is brought high. SHDN may be tied to the input
supply if not used.
The TC110 is a PFM/PWM step-up DC/DC controller
for use in systems operating from two or more cells, or
in low voltage, line-powered applications. It uses PWM
as the primary modulation scheme, but automatically
converts to PFM at output duty cycles less than
approximately 25%. The conversion to PFM provides
reduced supply current, and therefore higher operating
efficiency at low loads. The TC110 uses an external
switching transistor, allowing construction of switching
regulators with maximum output currents of 300mA.
Note: Because the TC110 uses an external diode,
a leakage path between the input voltage
and the output node (through the inductor
and diode) exists while the regulator is in
shutdown. Care must be taken in system
design to assure the input supply is isolated
from the load during shutdown.
The TC110 consumes only 70µA, typical, of supply
current and can be placed in a 0.5µA shutdown mode
by bringing the shutdown input (SHDN) low. The
regulator remains disabled while in shutdown mode,
and normal operation resumes when SHDN is brought
3.3
Soft Start
high. Other features include start-up at V = 0.9V and
an externally programmable soft start time.
IN
Soft start allows the output voltage to gradually ramp
from 0V to rated output value during start-up. This
action minimizes (or eliminates) overshoot, and in
general, reduces stress on circuit components.
Figure 3-3 shows the circuit required to implement soft
3.1
Operating Mode
The TC110 is powered by the voltage present on the
input. The applications circuits of Figure 3-1 and
start (values of 470K and 0.1µF for R
and C
V
,
SS
SS
DD
respectively, are adequate for most applications).
Figure 3-2 show operation in the bootstrapped and
non-bootstrapped modes. In bootstrapped mode, the
TC110 is powered from the output (start-up voltage is
3.4
Input Bypass Capacitors
supplied by V through the inductor and Schottky
IN
Using an input bypass capacitor reduces peak current
transients drawn from the input supply and reduces the
switching noise generated by the regulator. The source
impedance of the input supply determines the size of
the capacitor that should be used.
diode while Q1 is off). In bootstrapped mode, the
switching transistor is turned on harder because its
gate voltage is higher (due to the boost action of the
regulator), resulting in higher output current capacity.
The TC110 is powered from the input supply in the non-
bootstrapped mode. In this mode, the supply current to
the TC110 is minimized. However, the drive applied to
the gate of the switching transistor swings from the
input supply level to ground, so the transistor’s ON
resistance increases at low input voltages. Overall
efficiency is increased since supply current is reduced,
and less energy is consumed charging and discharging
the gate of the MOSFET. While the TC110 is guaran-
teed to start up at 0.9V the device performs to
specifications at 2.0V and higher.
DS21355B-page 4
2002 Microchip Technology Inc.
TC110
FIGURE 3-1:
FIGURE 3-2:
FIGURE 3-3:
BOOTSTRAPPED OPERATION
L1
D1
100µH
IN5817
V
OUT
n
MTP3055EL
C2
47µF
5
4
GND
EXT
TC110XX
V
V
SHDN
3
OUT
DD
C1
33µF
1
2
+
OFF
ON
V
IN
–
NON-BOOTSTRAPPED OPERATION
L1
100µH
D1
IN5817
V
OUT
n
MTP3055EL
C2
47µF
5
4
GND
EXT
TC110XX
V
V
SHDN
3
OUT
DD
1
2
OFF
ON
+
C1
33µF
V
IN
–
SOFT START/SHUTDOWN CIRCUIT
TC110XX
SHDN/SS
3
TC110XX
SHDN/SS
3
R
470K
R
SS
470K
SS
V
IN
SHDN
C
0.1µF
C
SS
0.1µF
SS
Shutdown Not Used
Shutdown Used
2002 Microchip Technology Inc.
DS21355B-page 5
TC110
Care must be taken to ensure the inductor can handle
peak switching currents, which can be several times
load currents. Exceeding rated peak current will result
in core saturation and loss of inductance. The inductor
should be selected to withstand currents greater than
3.5
Output Capacitor
The effective series resistance of the output capacitor
directly affects the amplitude of the output voltage
ripple. (The product of the peak inductor current and
the ESR determines output ripple amplitude.) There-
fore, a capacitor with the lowest possible ESR should
be selected. Smaller capacitors are acceptable for light
loads or in applications where ripple is not a concern.
The Sprague 595D series of tantalum capacitors are
among the smallest of all low ESR surface mount
capacitors available. Table 4-1 lists suggested
components and suppliers.
I
(Equation 3-10) without saturating.
PK
Calculating the peak inductor current is straightforward.
Inductor current consists of an AC (sawtooth) current
centered on an average DC current (i.e., input current).
Equation 3-6 calculates the average DC current. Note
that minimum input voltage and maximum load current
values should be used:
EQUATION 3-4:
3.6
Inductor Selection
Output Power
Efficiency
=
Input Power
Selecting the proper inductor value is a trade-off
between physical size and power conversion require-
ments. Lower value inductors cost less, but result in
higher ripple current and core losses. They are also
more prone to saturate since the coil current ramps
faster and could overshoot the desired peak value. This
not only reduces efficiency, but could also cause the
current rating of the external components to be
exceeded. Larger inductor values reduce both ripple
current and core losses, but are larger in physical size
and tend to increase the start-up time slightly.
Re-writing in terms of input and output currents and
voltages:
EQUATION 3-5:
(VOUTMAX) (I
)
OUTMAX
(VINMIN) (IINMAX) =
Efficiency
Solving for input curent:
EQUATION 3-6:
A 22µH inductor is recommended for the 300kHz
versions and a 47µH inductor is recommended for the
100kHz versions. Inductors with a ferrite core (or
equivalent) are also recommended. For highest
efficiency, use inductors with a low DC resistance (less
than 20 mΩ).
(VOUTMAX)(I
(Efficiency)(V
)
)
OUTMAX
I
=
INMAX
INMAX
The sawtooth current is centered on the DC current
level; swinging equally above and below the DC current
calculated in Equation 3-6. The peak inductor current is
the sum of the DC current plus half the AC current.
Note that minimum input voltage should be used when
calculating the AC inductor current (Equation 3-9).
The inductor value directly affects the output ripple
voltage. Equation 3-3 is derived as shown below, and
can be used to calculate an inductor value, given the
required output ripple voltage and output capacitor
series resistance:
EQUATION 3-7:
L(di)
dt
=
=
V
EQUATION 3-1:
V
≈ ESR(di)
RIPPLE
EQUATION 3-8:
where ESR is the equivalent series resistance of the
output filter capacitor, and V is in volts.
V(dt)
dt
di
RIPPLE
Expressing di in terms of switch ON resistance and
time:
EQUATION 3-9:
EQUATION 3-2:
[(VINMIN – V )t
]
SW ON
di =
L
ESR [(V – V )t
]
IN
SW ON
V
≈
RIPPLE
L
where: V
= V
of the switch (note if a CMOS
CESAT
SW
switch is used substitute V
for rDSON x I )
Solving for L:
CESAT
IN
Combining the DC current calculated in Equation 3-6,
with half the peak AC current calculated in Equation 3-
9, the peak inductor current is given by:
EQUATION 3-3:
ESR [(V – V )t
]
IN
SW ON
≈
L
V
RIPPLE
EQUATION 3-10:
IPK = IINMAX + 0.5(di)
DS21355B-page 6
2002 Microchip Technology Inc.
TC110
The two most significant losses in the N-channel
MOSFET are switching loss and I R loss. To minimize
3.7
Output Diode
2
For best results, use a Schottky diode such as the
MA735, 1N5817, MBR0520L or equivalent. Connect
the diode between the FB (or SENSE) input as close to
the IC as possible. Do not use ordinary rectifier diodes
since the higher threshold voltages reduce efficiency.
these, a transistor with low rDSON and low CRSS should
be used.
Bipolar NPN transistors can be used, but care must be
taken when determining base current drive. Too little
current will not fully turn the transistor on, and result in
unstable regulator operation and low efficiency. Too
high a base drive causes excessive power dissipation
in the transistor and increase switching time due to
3.8
External Switching Transistor
Selection
over-saturation. For peak efficiency, make R as large
as possible, but still guaranteeing the switching transis-
tor is completely saturated when the minimum value of
The EXT output is designed to directly drive an
N-channel MOSFET or NPN bipolar transistor. N-
channel MOSFETs afford the highest efficiency
because they do not draw continuous gate drive
current, but are typically more expensive than bipolar
transistors. If using an N-channel MOSFET, the gate
should be connected directly to the EXT output as
shown in Figure 3-1 and Figure 3-1. EXT is a compli-
mentary output with a maximum ON resistances of 43Ω
B
h
is used.
FE
3.9
Board Layout Guidelines
As with all inductive switching regulators, the TC110
generates fast switching waveforms which radiate
noise. Interconnecting lead lengths should be mini-
mized to keep stray capacitance, trace resistance and
radiated noise as low as possible. In addition, the GND
pin, input bypass capacitor and output filter capacitor
ground leads should be connected to a single point.
The input capacitor should be placed as close to power
and ground pins of the TC110 as possible.
to V when high and 27Ω to ground when low. Peak
DD
currents should be kept below 10mA.
When selecting an N-channel MOSFET, there are three
important parameters to consider: total gate charge
(Qg); ON resistance (rDSON) and reverse transfer
capacitance (CRSS). Qg is a measure of the total gate
capacitance that will ultimately load the EXT output.
Too high a Qg can reduce the slew rate of the EXT
output sufficiently to grossly lower operating efficiency.
Transistors with typical Qg data sheet values of 50nC
or less can be used. For example, the Si9410DY has a
Qg (typ) of 17nC @ V
current of:
= 5V. This equates to a gate
GS
I
GATEMAX = fMAX x Qg = 115kHz x 17nC = 2mA
2002 Microchip Technology Inc.
DS21355B-page 7
TC110
Figure 4-2 and Figure 4-3 both utilize an N-channel
switching transistor (Silconix Si9410DY). This transistor
is a member of the LittlefootTM family of small outline
MOSFETs. The circuit of Figure 4-2 operates in
bootstrapped mode, while the circuit of Figure 4-3
operates in non-bootstrapped mode.
4.0
4.1
APPLICATIONS
Circuit Examples
Figure 4-1 shows a TC110 operating as a 100kHz
bootstrapped regulator with soft start. This circuit uses
an NPN switching transistor (Zetex FZT690B) that has
an h of 400 and V
of 100 mV at I = 1A. Other
FE
CESAT
C
high beta transistors can be used, but the values of R
B
and C may need adjustment if h
is significantly
B
FE
different from that of the FZT690B.
TABLE 4-1:
SUGGESTED COMPONENTS AND SUPPLIERS
Type
Inductors
Capacitors
Matsuo
Diodes
Transistors
N-channel
Surface Mount
Sumida
Nihon
CD54 Series (300kHz)
CD75 (100kHz)
267 Series
EC10 Series
Silconix
Si9410DY
Sprague
Matsushita
Coiltronics
CTX Series
595D Series
MA735 Series
ON Semiconductor
MTP3055EL
MTD20N03
Nichicon
F93 Series
Through-Hole
Sumida
RCH855 Series
RCH110 Series
Sanyo
OS-CON Series
ON Semiconductor
1N5817 - 1N5822
NPN
Zetex
ZTX694B
Nichicon
Renco
PL Series
RL1284-12
DS21355B-page 8
2002 Microchip Technology Inc.
TC110
FIGURE 4-1:
100kHz BOOTSTRAPPED REGULATOR WITH SOFT START USING
A BIPOLAR TRANSISTOR
V
IN
D1
Matsushita
MA737
L1
CB
47µH
Sumida CD75
10nF
C
Ceramic
IN
10µF/16V
V
OUT
Q1
FZT690BCT
RB
1K
C
OUT
47µF, 10V
Tant.
5
4
EXT
GND
TC110301
C
SS
V
V
SHDN/SS
3
OUT
1
DD
0.1µF
Ceramic
R
470K
2
SS
SHUTDOWN
(Optional)
FIGURE 4-2:
300kHz BOOTSTRAPPED, N-CHANNEL TRANSISTOR
D1
ON Semiconductor
V
IN
L1
MBR0520L
22µH
Sumida CD54
C
IN
10µF/16V
V
OUT
Q1
Silconix
Si9410DY
C
OUT
47µF, 16V
Tant.
5
4
EXT
GND
TC110303
V
V
DD
SHDN/SS
3
OUT
1
2
FIGURE 4-3:
300kHz NON-BOOTSTRAPPED, N-CHANNEL TRANSISTOR
D1
ON Semiconductor
V
IN
L1
MBR0520L
22µH
Sumida CD54
C
IN
10µF/16V
V
OUT
Q1
Silconix
Si9410DY
C
OUT
47µF, 16V
Tant.
5
4
EXT
GND
TC110303
V
V
SHDN/SS
3
OUT
DD
1
2
2002 Microchip Technology Inc.
DS21355B-page 9
TC110
5.0
TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Output Voltage vs. Output Current
TC110 (300kHz, 3.3V)
Efficiency vs. Output Current
TC110 (300kHz, 3.3V)
L = 22µH, CL = 94µF (Tantalum)
L = 22µH, CL = 94µF (Tantalum)
3.5
100
80
2.7V
3.4
3.3
1.2V
1.8V
1.2V
1.5V
2.0V
60
40
1.8V
1.5V 2.0V
V
= 0.9V
3.2
3.1
IN
2.7V
20
0
V
= 0.9V
IN
3.0
0.1
1
10
100
(mA)
1000
0.1
1
10
100
(mA)
1000
OUTPUT CURRENT I
OUTPUT CURRENT I
OUT
OUT
DS21355B-page 10
2002 Microchip Technology Inc.
TC110
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
1
2
represents product classification; TC110 = M
represents first integer of voltage and frequency
Symbol
(100kHz)
Symbol
(300kHz)
Voltage
B
C
D
E
F
1
2
3
4
5
6
1.
2.
3.
4.
5.
6.
H
3
represents first decimal of voltage and frequency
Symbol
(100kHz)
Symbol
(300kHz)
Voltage
0
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
.0
.1
.2
.3
.4
.5
.6
.7
.8
.9
H
K
L
M
4
represents production lot ID code
2002 Microchip Technology Inc.
DS21355B-page 11
TC110
6.2
Taping Form
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
User Direction of Feed
Device
Marking
W
PIN 1
P
Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
5-Pin SOT-23A
8 mm
4 mm
3000
7 in
6.3
Package Dimensions
SOT-23A-5
.075 (1.90)
REF.
.071 (1.80)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.020 (0.50)
.012 (0.30)
PIN 1
.037 (0.95)
REF.
.122 (3.10)
.106 (2.70)
.057 (1.45)
.035 (0.90)
.010 (0.25)
.004 (0.09)
10° MAX.
.006 (0.15)
.000 (0.00)
.024 (0.60)
.004 (0.10)
Dimensions: inches (mm)
DS21355B-page 12
2002 Microchip Technology Inc.
TC110
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21355B-page13
TC110
NOTES:
DS21355B-page14
2002 Microchip Technology Inc.
TC110
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER,
PICSTART, PRO MATE, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip Tech-
nology Incorporated in the U.S.A. and other countries.
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
2002 Microchip Technology Inc.
DS21355B-page 15
WORLDWIDE SALES AND SERVICE
Japan
AMERICAS
ASIA/PACIFIC
Microchip Technology Japan K.K.
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3-18-20, Shinyokohama
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Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Corporate Office
Australia
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Technical Support: 480-792-7627
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Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Korea
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Tel: 480-792-7966 Fax: 480-792-7456
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
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Atlanta
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Tel: 770-640-0034 Fax: 770-640-0307
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Singapore
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Dallas
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Co., Ltd., Fuzhou Liaison Office
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Denmark
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Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
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Tel: 86-755-2350361 Fax: 86-755-2366086
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Toronto
China - Hong Kong SAR
Italy
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
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Tel: 852-2401-1200 Fax: 852-2401-3431
Microchip Technology SRL
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20041 Agrate Brianza
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Tel: 905-673-0699 Fax: 905-673-6509
India
Tel: 39-039-65791-1 Fax: 39-039-6899883
Microchip Technology Inc.
India Liaison Office
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
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Tel: 44 118 921 5869 Fax: 44-118 921-5820
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
05/01/02
DS21355B-page 16
2002 Microchip Technology Inc.
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