TC1185-2.85VCT_技术文档

TC1014/TC1015/TC1185

50mA, 100mA and 150mA CMOS LDOs with Shutdown and Reference Bypass

Features

Device Selection Table

• Extremely Low Supply Current (50µA, Typ.)

• Very Low Dropout Voltage

Junction

Temp. Range

Part Number

Package

• Choice of 50mA (TC1014), 100mA (TC1015) and

150mA (TC1016) Output

TC1014-xxVCT 5-Pin SOT-23A -40°C to +125°C

TC1015-xxVCT 5-Pin SOT-23A -40°C to +125°C

TC1185-xxVCT 5-Pin SOT-23A -40°C to +125°C

• High Output Voltage Accuracy

• Standard or Custom Output Voltages

• Power Saving Shutdown Mode

NOTE: xx indicates output voltages. Available output

voltages: 1.8, 2.5, 2.6, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0.

• Reference Bypass Input for Ultra Low-Noise

Operation

Other output voltages are available. Please contact Microchip

Technology Inc. for details.

• Over Current and Over Temperature Protection

• Space-Saving 5-Pin SOT-23A Package

Package Type

• Pin Compatible Upgrades for Bipolar Regulators

5-Pin SOT-23A

Applications

V

Bypass

OUT

5

• Battery Operated Systems

• Portable Computers

• Medical Instruments

• Instrumentation

4

TC1014

TC1015

TC1185

• Cellular/GSM/PHS Phones

• Linear Post-Regulator for SMPS

• Pagers

1

2

3

V

GND SHDN

IN

NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A)

2002 Microchip Technology Inc.

DS21335B-page 1

TC1014/TC1015/TC1185

General Description

Typical Application

The TC1014/TC1015/TC1185 are high accuracy

(typically ±0.5%) CMOS upgrades for older (bipolar)

low dropout regulators such as the LP2980. Designed

specifically for battery-operated systems, the devices’

CMOS construction eliminates wasted ground current,

significantly extending battery life. Total supply current

is typically 50µA at full load (20 to 60 times lower than

in bipolar regulators).

1

5

V

OUT

IN

OUT

+

TC1014

TC1015

TC1185

1µF

2

3

GND

The devices’ key features include ultra low noise oper-

ation (plus optional Bypass input), fast response to step

changes in load, and very low dropout voltage –

typically 85mV (TC1014); 180mV (TC1015); and

270mV (TC1185) at full load. Supply current is reduced

4

SHDN

Bypass

470pF

Reference

Bypass Cap

(Optional)

to 0.5µA (max) and V

falls to zero when the

OUT

shutdown input is low. The devices incorporate both

over-temperature and over-current protection.

Shutdown Control

(from Power Control Logic)

The TC1014/TC1015/TC1185 are stable with an output

capacitor of only 1µF and have a maximum output

current of 50mA, 100mA and 150mA, respectively. For

higher output current regulators, please see the

TC1107/TC1108/TC1173 (I

= 300mA) data sheets.

OUT

DS21335B-page 2

2002 Microchip Technology Inc.

TC1014/TC1015/TC1185

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Input Voltage......................................................... 6.5V

Output Voltage...........................(-0.3V) to (V + 0.3V)

IN

Power Dissipation............... Internally Limited (Note 7)

Maximum Voltage on Any Pin .........V +0.3V to -0.3V

IN

Operating Temperature Range......-40°C < T < 125°C

J

Storage Temperature......................... -65°C to +150°C

TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: V_IN= V_R+ 1V, I_L= 100µA, C_L= 3.3µF, SHDN > V_IH, T_A= 25°C, unless otherwise noted. Boldface type

specifications apply for junction temperatures of -40°C to +125°C.

Symbol

Parameter

Min

2.7

Typ

Max

6.0

Units

Device

Test Conditions

Note 1

V

Input Operating Voltage

Maximum Output Current

—

V

IN

I

50

100

150

—

mA

TC1014

TC1015

TC1185

OUTMAX

V

Output Voltage

V

– 2.5%

V

±0.5%

V + 2.5%

R

V

Note 2

Note 3

OUT

R

TCV

V

Temperature Coefficient

—

20

40

—

ppm/°C

OUT

∆V

/∆V

Line Regulation

Load Regulation

—

0.05

0.35

%

(V + 1V) ≤ V ≤ 6V

OUT

IN

R

IN

∆V

/V

—

0.5

2

3

TC1014; TC1015

TC1185

I

= 0.1mA to I

OUT OUT

L

OUTMAX

(Note 4)

V

-V

Dropout Voltage

—

2

65

85

180

270

—

120

250

400

mV

I

= 100µA

IN OUT

L

= 20mA

= 50mA

= 100mA

TC1015; TC1185

TC1185

= 150mA (Note 5)

I

Supply Current (Note 8)

Shutdown Supply Current

—

50

0.05

64

80

0.5

—

µA

dB

SHDN = V , I = 0

IH L

IN

INSD

SHDN = 0V

≤ 1kHz

PSRR

Power Supply Rejection

Ratio

F

RE

I

Output Short Circuit Current

Thermal Regulation

—

300

0.04

160

450

—

mA

V/W

°C

V

= 0V

OUTSC

OUT

∆V

/∆P

Notes 6, 7

OUT

D

T

Thermal Shutdown Die

Temperature

—

SD

∆T

Thermal Shutdown

Hysteresis

—

10

—

°C

SD

eN

Output Noise

600

nV/√Hz

I = I_OUTMAX, F = 10kHz

L

470pF from Bypass

to GND

Note 1: The minimum V_INhas to meet two conditions: V_IN≥ 2.7V and V_IN≥ V_R+ V_DROPOUT

.

2:

3:

V_Ris the regulator output voltage setting. For example: V_R= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.

TC V_OUT= (V_OUTMAX– V_OUTMIN)x 10⁶

V_OUTx ∆T

4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range

from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal

regulation specification.

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V

differential.

6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or

line regulation effects. Specifications are for a current pulse equal to I_LMAXat V_IN= 6V for T = 10 msec.

7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to initiate

thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.

8: Apply for Junction Temperatures of -40°C to +85°C.

2002 Microchip Technology Inc.

DS21335B-page 3

TC1014/TC1015/TC1185

TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: V_IN= V_R+ 1V, I_L= 100µA, C_L= 3.3µF, SHDN > V_IH, T_A= 25°C, unless otherwise noted. Boldface type

specifications apply for junction temperatures of -40°C to +125°C.

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

SHDN Input

V

SHDN Input High Threshold

SHDN Input Low Threshold

45

—

%V

IN

V

= 2.5V to 6.5V

IH

IN

V

15

%V

IN

IL

IN

Note 1: The minimum V_INhas to meet two conditions: V_IN≥ 2.7V and V_IN≥ V_R+ V_DROPOUT

.

2:

3:

V_Ris the regulator output voltage setting. For example: V_R= 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.

TC V_OUT= (V_OUTMAX– V_OUTMIN)x 10⁶

V_OUTx ∆T

4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range

from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal

regulation specification.

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V

differential.

6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or

line regulation effects. Specifications are for a current pulse equal to I_LMAXat V_IN= 6V for T = 10 msec.

7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to initiate

thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.

8: Apply for Junction Temperatures of -40°C to +85°C.

DS21335B-page 4

2002 Microchip Technology Inc.

TC1014/TC1015/TC1185

2.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 2-1.

TABLE 2-1:

PIN FUNCTION TABLE

Pin No.

(5-Pin SOT-23A)

Symbol

Description

1

2

3

V_IN

Unregulated supply input.

Ground terminal.

GND

SHDN

Shutdown control input. The regulator is fully enabled when a logic high is applied to this input.

The regulator enters shutdown when a logic low is applied to this input. During shutdown,

output voltage falls to zero, ERROR is open circuited and supply current is reduced to 0.5µA

(max).

4

5

Bypass

V_OUT

Reference bypass input. Connecting a 470pF to this input further reduces output noise.

Regulated voltage output.

2002 Microchip Technology Inc.

DS21335B-page 5

TC1014/TC1015/TC1185

3.1

Bypass Input

3.0

DETAILED DESCRIPTION

A 470pF capacitor connected from the Bypass input to

ground reduces noise present on the internal

reference, which in turn significantly reduces output

noise. If output noise is not a concern, this input may be

left unconnected. Larger capacitor values may be

used, but results in a longer time period to rated output

voltage when power is initially applied.

The TC1014/TC1015/TC1185 are precision fixed

output voltage regulators. (If an adjustable version is

desired, please see the TC1070/TC1071/TC1187 data

sheet.) Unlike bipolar regulators, the TC1014/TC1015/

TC1185 supply current does not increase with load

current. In addition, V

remains stable and within

OUT

regulation over the entire 0mA to I

operating

OUTMAX

load current ranges (an important consideration in RTC

and CMOS RAM battery back-up applications).

3.2

Output Capacitor

Figure 3-1 shows a typical application circuit. The

regulator is enabled any time the shutdown input

A 1µF (min) capacitor from V

to ground is required.

The output capacitor should have an effective series

OUT

(SHDN) is at or above V , and shutdown (disabled)

resistance greater than 0.1Ω and less than 5Ω. A 1µF

IH

when SHDN is at or below V . SHDN may be

capacitor should be connected from V to GND if there

IL

IN

controlled by a CMOS logic gate, or I/O port of a

microcontroller. If the SHDN input is not required, it

should be connected directly to the input supply. While

in shutdown, supply current decreases to 0.05µA

is more than 10 inches of wire between the regulator

and the AC filter capacitor, or if a battery is used as the

power source. Aluminum electrolytic or tantalum

capacitor types can be used. (Since many aluminum

electrolytic capacitors freeze at approximately -30°C,

solid tantalums are recommended for applications

operating below -25°C.) When operating from sources

other than batteries, supply-noise rejection and

transient response can be improved by increasing the

value of the input and output capacitors and employing

passive filtering techniques.

(typical), V

falls to zero volts.

OUT

FIGURE 3-1:

TYPICAL APPLICATION

CIRCUIT

V

OUT

IN

OUT

+

1µF

+

TC1014

TC1015

TC1185

+

1µF

Battery

GND

SHDN

Bypass

470pF

Reference

Bypass Cap

(Optional)

Shutdown Control

(to CMOS Logic or Tie

to V if unused)

IN

DS21335B-page 6

2002 Microchip Technology Inc.

TC1014/TC1015/TC1185

Equation 4-1 can be used in conjunction with Equation

4-2 to ensure regulator thermal operation is within

limits. For example:

4.0

4.1

THERMAL CONSIDERATIONS

Thermal Shutdown

Given:

Integrated thermal protection circuitry shuts the

regulator off when die temperature exceeds 160°C.

The regulator remains off until the die temperature

drops to approximately 150°C.

V

= 3.0V +10%

= 2.7V – 2.5%

INMAX

V

OUTMIN

I_LOADMAX= 40mA

T

JMAX

= 125°C

= 55°C

4.2

Power Dissipation

T

AMAX

The amount of power the regulator dissipates is

primarily a function of input and output voltage, and

output current. The following equation is used to

calculate worst case actual power dissipation:

Find: 1. Actual power dissipation

2. Maximum allowable dissipation

Actual power dissipation:

P

≈ (V_INMAX– V_OUTMIN)I

LOADMAX

D

EQUATION 4-1:

–3

= [(3.0 x 1.1) – (2.7 x .975)]40 x 10

= 26.7mW

P

≈ (V_INMAX– V_OUTMIN)I

LOADMAX

D

Where:

Maximum allowable power dissipation:

_MAX= (T _MAX– T

P

= Worst case actual power dissipation

D

P

)

AMAX

D

J

= Maximum voltage on V

V

IN

INMAX

θ

JA

V

= Minimum regulator output voltage

= Maximum output (load) current

OUTMIN

= (125 – 55)

220

I

LOADMAX

The maximum allowable power dissipation (Equation

4-2) is a function of the maximum ambient temperature

= 318mW

In this example, the TC1014 dissipates a maximum of

26.7mW; below the allowable limit of 318mW. In a

similar manner, Equation 4-1 and Equation 4-2 can be

used to calculate maximum current and/or input

voltage limits.

(T _MAX), the maximum allowable die temperature

A

(T_JMAX) and the thermal resistance from junction-to-air

(θ ). The 5-Pin SOT-23A package has a θ

of

JA

approximately 220°C/Watt.

EQUATION 4-2:

4.3

Layout Considerations

P

_DMAX= (T_JMAX– T

)

AMAX

The primary path of heat conduction out of the package

is via the package leads. Therefore, layouts having a

ground plane, wide traces at the pads, and wide power

θ

JA

Where all terms are previously defined.

supply bus lines combine to lower θ and therefore

JA

increase the maximum allowable power dissipation

limit.

2002 Microchip Technology Inc.

DS21335B-page 7

TC1014/TC1015/TC1185

5.0

TYPICAL CHARACTERISTICS

(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein are

not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Dropout Voltage vs. Temperature

0.100

0.090

0.080

0.070

0.060

0.050

0.040

0.030

0.020

0.010

0.000

0.020

0.018

0.016

0.014

0.012

0.010

0.008

0.006

0.004

0.002

0.000

V

I

= 3.3V

= 10mA

V

I

= 3.3V

= 50mA

OUT

LOAD

OUT

LOAD

C

= 1µF

IN

C

= 1µF

IN

OUT

= 1µF

OUT

-40

-20

0

20

50

C)

70

125

-40

-20

0

20

50

C)

70

125

TEMPERATURE (

°

TEMPERATURE (

°

Dropout Voltage vs. Temperature

0.200

0.180

0.160

0.140

0.120

0.100

0.080

0.060

0.040

0.020

0.000

0.300

0.250

0.200

0.150

0.100

0.050

0.000

V

I

= 3.3V

= 100mA

OUT

LOAD

V

I

= 3.3V

= 150mA

OUT

LOAD

C

= 1µF

IN

C

= 1µF

IN

OUT

= 1µF

OUT

= 1µF

-40

-20

0

20

50

C)

70

125

-40

-20

0

20

50

C)

70

125

TEMPERATURE (

°

TEMPERATURE (

°

Ground Current vs. V

IN

V

IN

90

80

70

60

50

40

30

20

10

0

90

80

70

60

50

40

30

20

10

0

= 3.3V

= 100mA

V

I

= 3.3V

= 10mA

OUT

LOAD

I

LOAD

C

= 1µF

IN

C

= 1µF

IN

OUT

0

0.5

1

1.5

2

2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5

0 0.5 1 1.5

2

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5 6.5 7 7.5

5.5 6 6.5 7 7.5

6

0

0.5

3.5 4 4.5

V

(V)

IN

V

(V)

IN

DS21335B-page 8

2002 Microchip Technology Inc.

TC1014/TC1015/TC1185

5.0

TYPICAL CHARACTERISTICS (CONTINUED)

(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)

V

vs. V

IN

Ground Current vs. V

OUT

IN

3.5

3

80

70

60

50

40

30

20

10

0

V

I

= 3.3V

= 0

OUT

LOAD

V

= 3.3V

= 150mA

OUT

I

LOAD

2.5

2

1.5

1

C

= 1µF

IN

OUT

0.5

0

C

= 1µF

IN

OUT

1.5

0 0.5 1 1.5

2

2.5

3

3.5 4.5 5 5.5 6.5

4

6

7

7.5

3.5 4 4.5 5 5.5 6 6.5 7 7.5

0.

1

1.5

3.5

4

5

5.5

6

6.5 7

0

0.5 1 1.5

2

2.5

3

4

4.5

6

V

(V)

IN

V

(V)

IN

V

vs. V

IN

OUT

Output Voltage vs. Temperature

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

3.320

3.315

3.310

3.305

3.300

3.295

3.290

3.285

3.280

3.275

V

= 3.3V

OUT

I

= 100mA

LOAD

V

I

= 3.3V

= 10mA

OUT

LOAD

C

= 1µF

IN

C

= 1µF

IN

OUT

= 1µF

OUT

V

= 4.3V

IN

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

6

6.5

7

V

(V)

-40

-20

-10

0

20

40

C)

85

125

IN

TEMPERATURE (

°

Output Voltage vs. Temperature

3.290

3.288

3.286

3.284

3.282

3.280

3.278

3.276

3.274

V

I

= 3.3V

= 150mA

OUT

LOAD

C

= 1µF

IN

= 1µF

OUT

V

= 4.3V

IN

-40

-20

-10

0

20

40

C)

85

125

TEMPERATURE (

°

2002 Microchip Technology Inc.

DS21335B-page 9

TC1014/TC1015/TC1185

5.0

TYPICAL CHARACTERISTICS (CONTINUED)

(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)

Output Voltage vs. Temperature

5.025

5.020

5.015

5.010

5.005

5.000

4.995

4.990

4.985

4.994

4.992

4.990

4.988

4.986

4.984

4.982

4.980

4.978

4.976

4.974

V

= 5V

= 150mA

OUT

V

= 5V

= 10mA

OUT

I

LOAD

I

LOAD

C

V

= 1µF

= 6V

IN

OUT

C

V

= 1µF

= 6V

IN

OUT

IN

-40

-20

-10

0

20

40

C)

85

125

-40

-20

-10

0

20

40

C)

85

125

TEMPERATURE (

°

TEMPERATURE (

°

Temperature vs. Quiescent Current

80

70

60

50

40

30

20

10

0

70

60

50

40

30

20

10

0

V

I

= 5V

OUT

V

I

= 5V

OUT

= 150mA

LOAD

= 10mA

LOAD

C

V

= 1µF

IN

= 1µF

OUT

C

V

= 1µF

= 6V

IN

= 1µF

OUT

IN

= 6V

-40

-20

-10

0

20

40

C)

85

125

TEMPERATURE (

°

-40

-20

-10

0

20

40

C)

85

125

TEMPERATURE (

°

Output Noise vs. Frequency

Stability Region vs. Load Current

Power Supply Rejection Ratio

1000

-30

-35

10.0

1.0

C

= 1µF

OUT

to 10

I

= 10mA

= 4V

R

C

= 50Ω

OUT

LOAD

= 1

IN

µ

F

V

µ

F

IN

DC

IN

OUT

= 100mV

= 3V

= 1

µ

F

-40

-45

p-p

AC

100

10

1

= 0

OUT

BYP

C

= 0

IN

OUT

= 1µF

-50

-55

Stable Region

-60

-65

-70

-75

-80

0.1

0.0

0.1

0.01

0.01K 0.1K

10

1K

10K 100K 1000K

0

20 30 40 50 60 70 80 90 100

LOAD CURRENT (mA)

0.1K

1K

10K

1000K

100K

0.01K

FREQUENCY (Hz)

DS21335B-page 10

2002 Microchip Technology Inc.

TC1014/TC1015/TC1185

5.0

TYPICAL CHARACTERISTICS (CONTINUED)

Measure Rise Time of 3.3V LDO Without Bypass Capacitor

Conditions: C = 1µF, C = 1µF, C = 0pF, I = 100mA

Measure Rise Time of 3.3V LDO With Bypass Capacitor

Conditions: C = 1µF, C = 1µF, C = 470pF, I = 100mA

IN OUT

BYP

LOAD

IN OUT BYP LOAD

V

= 4.3V, Temp = 25°C, Rise Time = 184µS

V

= 4.3V, Temp = 25°C, Rise Time = 448µS

IN

V

SHDN

V

OUT

Measure Fall Time of 3.3V LDO Without Bypass Capacitor

Conditions: C = 1µF, C = 1µF, C = 0pF, I = 100mA

Measure Fall Time of 3.3V LDO With Bypass Capacitor

Conditions: C = 1µF, C = 1µF, C = 470pF, I = 50mA

IN OUT BYP LOAD

IN OUT

BYP

LOAD

V

= 4.3V, Temp = 25°C, Fall Time = 52µS

V

= 4.3V, Temp = 25°C, Fall Time = 100µS

IN

V

SHDN

V

SHDN

V

OUT

V

OUT

2002 Microchip Technology Inc.

DS21335B-page 11

TC1014/TC1015/TC1185

5.0

TYPICAL CHARACTERISTICS (CONTINUED)

Measure Rise Time of 5.0V LDO With Bypass Capacitor

Conditions: C = 1µF, C = 1µF, C = 470pF, I = 100mA

Measure Rise Time of 5.0V LDO Without Bypass Capacitor

Conditions: C = 1µF, C = 1µF, C = 0pF, I = 100mA

IN OUT

BYP

LOAD

IN OUT LOAD

BYP

V

= 6V, Temp = 25°C, Rise Time = 390µS

V

= 6V, Temp = 25°C, Rise Time = 192µS

IN

V

SHDN

V

OUT

Measure Fall Time of 5.0V LDO With Bypass Capacitor

Conditions: C = 1µF, C = 1µF, C = 470pF, I = 50mA

Measure Fall Time of 5.0V LDO Without Bypass Capacitor

Conditions: C = 1µF, C = 1µF, C = 0pF, I = 100mA

IN OUT

BYP

LOAD

IN OUT BYP LOAD

V

= 6V, Temp = 25°C, Fall Time = 167µS

V

= 6V, Temp = 25°C, Fall Time = 88µS

IN

V

SHDN

V

OUT

DS21335B-page 12

2002 Microchip Technology Inc.

TC1014/TC1015/TC1185

5.0

TYPICAL CHARACTERISTICS (CONTINUED)

Load Regulation of 3.3V LDO

Conditions: C = 1µF, C

= 2.2µF, C = 470pF,

BYP

Conditions: C = 1µF, C

= 2.2µF, C = 470pF,

BYP

IN

OUT

+ 0.25V, Temp = 25°C

OUT

IN

OUT

+ 0.25V, Temp = 25°C

OUT

V

= V

V

= V

IN

I

= 50mA switched in at 10kHz, V is AC coupled

OUT

I

= 100mA switched in at 10kHz, V is AC coupled

OUT

LOAD

I

LOAD

V

OUT

Load Regulation of 3.3V LDO

Conditions: C = 1µF, C = 2.2µF, C

Line Regulation of 3.3V LDO

Conditions: V = 4V, + 1V Squarewave @2.5kHz

= 470pF,

IN OUT BYP

IN

V

= V + 0.25V, Temp = 25°C

IN

OUT

I

= 150mA switched in at 10kHz, V is AC coupled

OUT

LOAD

V

I

IN

LOAD

V

OUT

V

OUT

C

I

= 0µF, C

LOAD

= 1µF, C

IN

= 470pF,

IN

OUT

BYP

are AC coupled

OUT

= 100mA, V & V

2002 Microchip Technology Inc.

DS21335B-page 13

TC1014/TC1015/TC1185

5.0

TYPICAL CHARACTERISTICS (CONTINUED)

Line Regulation of 5.0V LDO

Thermal Shutdown Response of 5.0V LDO

Conditions: V = 6V, C = 0µF, C = 1µF

Conditions: V = 6V, + 1V Squarewave @2.5kHz

IN

IN IN

OUT

V

IN

V

OUT

C

I

= 0µF, C

LOAD

= 1µF, C

IN

= 470pF,

IN

OUT

BYP

are AC coupled

OUT

= 100mA, V & V

I_LOADwas increased until temperature of die reached about 160

which time integrated thermal protection circuitry shuts the regulator

off when die temperature exceeds approximately 160 C. The regulator

remains off until die temperature drops to approximately 150 C.

°C, at

°

DS21335B-page 14

2002 Microchip Technology Inc.

TC1014/TC1015/TC1185

6.0

6.1

PACKAGING INFORMATION

Package Marking Information

“1” & “2” = part number code + temperature range and

voltage

TC1014

Code

TC1015

Code

TC1185

Code

(V)

1.8

2.5

2.6

2.7

2.8

2.85

3.0

3.3

3.6

4.0

5.0

AY

A1

NB

A2

AZ

A8

A3

A5

A9

A0

A7

BY

B1

BT

B2

BZ

B8

B3

B5

B9

B0

B7

NY

N1

NT

N2

NZ

N8

N3

N5

N9

N0

N7

“3” represents date code

“4” represents lot ID number

6.2

Taping Form

Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices

User Direction of Feed

Device

Marking

W

PIN 1

P

Standard Reel Component Orientation

TR Suffix Device

(Mark Right Side Up)

Carrier Tape, Number of Components Per Reel and Reel Size

Package

Carrier Width (W)

Pitch (P)

Part Per Full Reel

Reel Size

5-Pin SOT-23A

8 mm

4 mm

3000

7 in

2002 Microchip Technology Inc.

DS21335B-page 15

TC1014/TC1015/TC1185

6.3

Package Dimensions

SOT-23A-5

.075 (1.90)

REF.

.071 (1.80)

.059 (1.50)

.122 (3.10)

.098 (2.50)

.020 (0.50)

.012 (0.30)

PIN 1

.037 (0.95)

REF.

.122 (3.10)

.106 (2.70)

.057 (1.45)

.035 (0.90)

.010 (0.25)

.004 (0.09)

10° MAX.

.006 (0.15)

.000 (0.00)

.024 (0.60)

.004 (0.10)

Dimensions: inches (mm)

DS21335B-page 16

2002 Microchip Technology Inc.

TC1014/TC1015/TC1185

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-

mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

 2002 Microchip Technology Inc.

DS21335B-page17

TC1014/TC1015/TC1185

NOTES:

DS21335B-page18

 2002 Microchip Technology Inc.

TC1014/TC1015/TC1185

Information contained in this publication regarding device

applications and the like is intended through suggestion only

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

No representation or warranty is given and no liability is

assumed by Microchip Technology Incorporated with respect

to the accuracy or use of such information, or infringement of

patents or other intellectual property rights arising from such

use or otherwise. Use of Microchip’s products as critical com-

ponents in life support systems is not authorized except with

express written approval by Microchip. No licenses are con-

veyed, implicitly or otherwise, under any intellectual property

rights.

Trademarks

The Microchip name and logo, the Microchip logo, FilterLab,

KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER,

PICSTART, PRO MATE, SEEVAL and The Embedded Control

Solutions Company are registered trademarks of Microchip Tech-

nology Incorporated in the U.S.A. and other countries.

dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,

In-Circuit Serial Programming, ICSP, ICEPIC, microPort,

Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,

MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select

Mode and Total Endurance are trademarks of Microchip

Technology Incorporated in the U.S.A.

Serialized Quick Turn Programming (SQTP) is a service mark

of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received QS-9000 quality system

certification for its worldwide headquarters,

design and wafer fabrication facilities in

Chandler and Tempe, Arizona in July 1999

and Mountain View, California in March 2002.

The Company’s quality system processes and

procedures are QS-9000 compliant for its

PICmicro^®8-bit MCUs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals,

non-volatile memory and analog products. In

addition, Microchip’s quality system for the

design and manufacture of development

systems is ISO 9001 certified.

2002 Microchip Technology Inc.

DS21335B-page 19

WORLDWIDE SALES AND SERVICE

Japan

AMERICAS

ASIA/PACIFIC

Microchip Technology Japan K.K.

Benex S-1 6F

3-18-20, Shinyokohama

Kohoku-Ku, Yokohama-shi

Kanagawa, 222-0033, Japan

Tel: 81-45-471- 6166 Fax: 81-45-471-6122

Corporate Office

Australia

2355 West Chandler Blvd.

Microchip Technology Australia Pty Ltd

Suite 22, 41 Rawson Street

Epping 2121, NSW

Chandler, AZ 85224-6199

Tel: 480-792-7200 Fax: 480-792-7277

Technical Support: 480-792-7627

Web Address: http://www.microchip.com

Australia

Tel: 61-2-9868-6733 Fax: 61-2-9868-6755

Korea

Rocky Mountain

China - Beijing

Microchip Technology Korea

168-1, Youngbo Bldg. 3 Floor

Samsung-Dong, Kangnam-Ku

Seoul, Korea 135-882

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7966 Fax: 480-792-7456

Microchip Technology Consulting (Shanghai)

Co., Ltd., Beijing Liaison Office

Unit 915

Bei Hai Wan Tai Bldg.

Atlanta

500 Sugar Mill Road, Suite 200B

Atlanta, GA 30350

Tel: 770-640-0034 Fax: 770-640-0307

Boston

2 Lan Drive, Suite 120

Westford, MA 01886

Tel: 978-692-3848 Fax: 978-692-3821

Tel: 82-2-554-7200 Fax: 82-2-558-5934

Singapore

Microchip Technology Singapore Pte Ltd.

200 Middle Road

#07-02 Prime Centre

No. 6 Chaoyangmen Beidajie

Beijing, 100027, No. China

Tel: 86-10-85282100 Fax: 86-10-85282104

China - Chengdu

Microchip Technology Consulting (Shanghai)

Co., Ltd., Chengdu Liaison Office

Rm. 2401, 24th Floor,

Ming Xing Financial Tower

No. 88 TIDU Street

Singapore, 188980

Tel: 65-6334-8870 Fax: 65-6334-8850

Taiwan

Microchip Technology Taiwan

11F-3, No. 207

Tung Hua North Road

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Tel: 886-2-2717-7175 Fax: 886-2-2545-0139

Chicago

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Tel: 86-28-86766200 Fax: 86-28-86766599

Tel: 630-285-0071 Fax: 630-285-0075

China - Fuzhou

Dallas

Microchip Technology Consulting (Shanghai)

Co., Ltd., Fuzhou Liaison Office

Unit 28F, World Trade Plaza

No. 71 Wusi Road

Fuzhou 350001, China

4570 Westgrove Drive, Suite 160

Addison, TX 75001

EUROPE

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Co., Ltd.

Room 701, Bldg. B

Far East International Plaza

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Tel: 86-21-6275-5700 Fax: 86-21-6275-5060

Kokomo

France

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Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79

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Microchip Technology GmbH

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China - Shenzhen

Microchip Technology Consulting (Shanghai)

Co., Ltd., Shenzhen Liaison Office

Rm. 1315, 13/F, Shenzhen Kerry Centre,

Renminnan Lu

Shenzhen 518001, China

Tel: 86-755-2350361 Fax: 86-755-2366086

New York

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Tel: 631-273-5305 Fax: 631-273-5335

San Jose

Microchip Technology Inc.

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San Jose, CA 95131

Tel: 408-436-7950 Fax: 408-436-7955

Toronto

China - Hong Kong SAR

Italy

Microchip Technology Hongkong Ltd.

Unit 901-6, Tower 2, Metroplaza

223 Hing Fong Road

Kwai Fong, N.T., Hong Kong

Tel: 852-2401-1200 Fax: 852-2401-3431

Microchip Technology SRL

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20041 Agrate Brianza

Milan, Italy

6285 Northam Drive, Suite 108

Mississauga, Ontario L4V 1X5, Canada

Tel: 905-673-0699 Fax: 905-673-6509

India

Tel: 39-039-65791-1 Fax: 39-039-6899883

Microchip Technology Inc.

India Liaison Office

United Kingdom

Microchip Ltd.

505 Eskdale Road

Winnersh Triangle

Wokingham

Berkshire, England RG41 5TU

Tel: 44 118 921 5869 Fax: 44-118 921-5820

Divyasree Chambers

1 Floor, Wing A (A3/A4)

No. 11, O’Shaugnessey Road

Bangalore, 560 025, India

Tel: 91-80-2290061 Fax: 91-80-2290062

05/01/02

DS21335B-page 20

2002 Microchip Technology Inc.


型号：	TC1185-2.85VCT
厂家：	MICROCHIP
描述：	2.85 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO5, SC-74A, SOT-23A, 5 PIN 光电二极管输出元件调节器
文件：	总20页 (文件大小：558K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TC1185-2.85VCT [MICROCHIP]

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