TC1185-5.0VCT713-VAO

TC1014/TC1015/TC1185

50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown

and Reference Bypass

Features:

General Description

• Low Supply Current (50 µA, typical)

• Low Dropout Voltage

The TC1014/TC1015/TC1185 are high accuracy

(typically ±0.5%) CMOS upgrades for older (bipolar)

Low Dropout Regulators (LDOs) such as the LP2980.

Designed specifically for battery-operated systems, the

devices’ CMOS construction eliminates wasted ground

current, significantly extending battery life. Total supply

current is typically 50 µA at full load (20 to 60 times

lower than in bipolar regulators).

• Choice of 50 mA (TC1014), 100 mA (TC1015)

and 150 mA (TC1185) Output

• High Output Voltage Accuracy

• Standard or Custom Output Voltages

• Power-Saving Shutdown Mode

• Reference Bypass Input for Ultra Low-Noise

Operation

The devices’ key features include ultra low-noise

operation (plus optional Bypass input), fast response to

step changes in load, and very low dropout voltage,

typically 85 mV (TC1014), 180 mV (TC1015), and

270 mV (TC1185) at full-load. Supply current is

reduced to 0.5 µA (max) and V_OUTfalls to zero when

the shutdown input is low. The devices incorporate both

overtemperature and overcurrent protection.

• Overcurrent and Overtemperature Protection

• Space-Saving 5-Pin SOT-23 Package

• Pin-Compatible Upgrades for Bipolar Regulators

• Standard Output Voltage Options:

- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,

3.3V, 3.6V, 4.0V, 5.0V

The TC1014/TC1015/TC1185 are stable with an output

capacitor of only 1 µF and have a maximum output

current of 50 mA, 100 mA and 150 mA, respectively.

For higher output current regulators, please see the

TC1107 (DS21356), TC1108 (DS21357), TC1173

(DS21362) (I_OUT= 300 mA) data sheets.

Applications:

• Battery-Operated Systems

• Portable Computers

• Medical Instruments

• Instrumentation

Package Type

• Cellular/GSM/PHS Phones

• Linear Post-Regulator for SMPS

• Pagers

5-Pin SOT-23

V_OUT

5

Bypass

4

Typical Application

1

5

V_IN

V_OUT

TC1014

TC1015

TC1185

+

TC1014

TC1015

TC1185

1 µF

2

3

GND

1

2

3

V_IN

GND SHDN

4

SHDN

Bypass

470 pF

Reference

Bypass Cap

(Optional)

Shutdown Control

(from Power Control Logic)

DS21335E-page 1

TC1014/TC1015/TC1185

† Notice: Stresses above those listed under "Absolute

Maximum Ratings" may cause permanent damage to

the device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

Input Voltage .........................................................6.5V

Output Voltage........................... (-0.3V) to (V_IN+ 0.3V)

Power Dissipation................Internally Limited (Note 7)

Maximum Voltage on Any Pin ........V_IN+0.3V to -0.3V

Operating Temperature Range...... -40°C < T_J< 125°C

Storage Temperature..........................-65°C to +150°C

TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS

Electrical Specifications: V_IN= V_R+ 1V, I_L= 100 µA, C_L= 1.0 µF, SHDN > V_IH, T_A= +25°C, unless otherwise noted.

Boldface type specifications apply for junction temperatures of -40°C to +125°C.

Parameter

Symbol

Min

2.7

Typ

Max

6.0

Units

Device

Test Conditions

Note 1

Input Operating Voltage

Maximum Output Current

—

V

—

V_IN

50

100

150

—

mA

TC1014

TC1015

TC1185

I_OUTMAX

Output Voltage

V

– 2.5%

V

±0.5%

V + 2.5%

R

V

—

Note 2

Note 3

V_OUT

R

V

Temperature Coefficient

—

20

40

—

ppm/°C

TCV_OUT

OUT

Line Regulation

Load Regulation

—

0.05

0c.35

%

—

(V + 1V) ≤ V ≤ 6V

ΔV_OUT

ΔV_IN

/

R

IN

—

0.5

2

3

TC1014; TC1015 I = 0.1 mA to I

L

ΔV_OUT

V_OUT

OUTMAX

TC1185

I = 0.1 mA to I

L

(Note 4)

Dropout Voltage

—

2

65

85

180

270

—

120

250

400

mV

—

I = 100 µA

V_IN-V_OUT

L

I = 20 mA

L

I = 50 mA

L

TC1015; TC1185 I = 100 mA

L

TC1185

I = 150 mA (Note 5)

L

Supply Current (Note 8)

—

50

0.05

64

80

0.5

—

µA

dB

—

SHDN = V , I = 0

I_IN

IH

L

Shutdown Supply Current

SHDN = 0V

I_INSD

PSRR

Power Supply Rejection

Ratio

F

≤ 1 kHz

RE

Output Short Circuit Current

Thermal Regulation

—

300

450

—

mA

—

V

= 0V

I_OUTSC

OUT

0.04

V/W

Notes 6, 7

ΔV_OUT

ΔP_D

/

Thermal Shutdown Die

Temperature

—

160

10

—

°C

.

—

T_SD

Thermal Shutdown

Hysteresis

ΔT_SD

Note 1:

The minimum V has to meet two conditions: V ≥ 2.7V and V ≥ V + V

IN

R

DROPOUT

2:

3:

V

is the regulator output voltage setting. For example: V = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.

R

6

TC V

= (V_OUTMAX– V_OUTMIN)x 10

OUT

V

x ΔT

OUT

4:

Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range

from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal

regulation specification.

5:

6:

7:

Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V

differential.

Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load

or line regulation effects. Specifications are for a current pulse equal to I_LMAXat V = 6V for T = 10 ms.

IN

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e., T , T , θ ). Exceeding the maximum allowable power dissipation causes the device to

A

J

JA

initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.

8:

Apply for Junction Temperatures of -40°C to +85°C.

DS21335E-page 2

TC1014/TC1015/TC1185

TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Specifications: V_IN= V_R+ 1V, I_L= 100 µA, C_L= 1.0 µF, SHDN > V_IH, T_A= +25°C, unless otherwise noted.

Boldface type specifications apply for junction temperatures of -40°C to +125°C.

Parameter

Output Noise

Symbol

Min

Typ

Max

Units

Device

Test Conditions

I = I

eN

—

600

—

nV/√Hz

—

,

OUTMAX

L

F = 10 kHz

470 pF from Bypass

to GND

SHDN Input High Threshold

SHDN Input Low Threshold

45

—

%V

—

V

= 2.5V to 6.5V

V_IH

V_IL

IN

15

%V

V

IN

Note 1:

The minimum V has to meet two conditions: V ≥ 2.7V and V ≥ V + V

DROPOUT

.

IN

R

2:

3:

V

is the regulator output voltage setting. For example: V = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.

R

6

TC V

= (V_OUTMAX– V_OUTMIN)x 10

OUT

V

x ΔT

OUT

4:

Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range

from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal

regulation specification.

5:

6:

7:

Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V

differential.

Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load

or line regulation effects. Specifications are for a current pulse equal to I_LMAXat V = 6V for T = 10 ms.

IN

The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the

thermal resistance from junction-to-air (i.e., T , T , θ ). Exceeding the maximum allowable power dissipation causes the device to

A

J

JA

initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.

8:

Apply for Junction Temperatures of -40°C to +85°C.

TEMPERATURE CHARACTERISTICS

Electrical Specifications: V_IN= V_R+ 1V, I_L= 100 µA, C_L= 1.0 µF, SHDN > V_IH, T_A= +25°C, unless otherwise noted.

Boldface type specifications apply for junction temperatures of -40°C to +125°C.

Parameters

Temperature Ranges:

Sym

Min

Typ

Max

Units

Conditions

Extended Temperature Range

Operating Temperature Range

Storage Temperature Range

Thermal Package Resistances:

Thermal Resistance, 5L-SOT-23

T_A

-40

-65

—

+125

+150

°C

θ_JA

—

256

—

°C/W

DS21335E-page 3

TC1014/TC1015/TC1185

2.0

TYPICAL PERFORMANCE CURVES

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise specified, all parts are measured at temperature = +25°C.

Dropout Voltage vs. Temperature

0.100

0.090

0.080

0.070

0.060

0.050

0.040

0.030

0.020

0.010

0.000

0.020

0.018

0.016

0.014

0.012

0.010

0.008

0.006

0.004

0.002

0.000

V

I

= 3.3V

= 10mA

V

I

= 3.3V

= 50mA

OUT

LOAD

OUT

LOAD

C

= 1µF

IN

C

= 1µF

IN

= 1µF

OUT

C

= 1µF

OUT

-40

-20

0

20

50

C)

70

125

-40

-20

0

20

50

C)

70

125

TEMPERATURE (

°

TEMPERATURE (

°

FIGURE 2-1:

Dropout Voltage vs.

FIGURE 2-4:

Dropout Voltage vs.

Temperature.

Dropout Voltage vs. Temperature

0.200

0.300

V

I

= 3.3V

= 100mA

OUT

LOAD

= 3.3V

= 150mA

0.180

0.160

0.140

0.120

0.100

0.080

0.060

0.040

0.020

0.000

OUT

LOAD

I

0.250

0.200

0.150

0.100

0.050

0.000

C

= 1µF

IN

C

= 1µF

IN

OUT

= 1µF

OUT

= 1µF

-40

-20

0

20

50

C)

70

125

-40

-20

0

20

50

C)

70

125

TEMPERATURE (

°

TEMPERATURE (

°

FIGURE 2-2:

Dropout Voltage vs.

FIGURE 2-5:

Dropout Voltage vs.

Temperature.

Ground Current vs. V

IN

90

80

70

60

50

40

30

20

10

0

90

80

70

60

50

40

30

20

10

0

V

I

= 3.3V

= 100mA

OUT

V

I

= 3.3V

= 10mA

OUT

LOAD

C

= 1µF

IN

C

= 1µF

IN

OUT

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5 6 6.5 7 7.5

0 0.5

1

2

3

5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5 6.5 7 7.5

5.5 6 6.5 7 7.5

6

0

0.5

3.5 4 4.5

V

(V)

IN

V

(V)

IN

FIGURE 2-3:

Ground Current vs. Input

FIGURE 2-6:

Voltage (V ).

Ground Current vs. Input

Voltage (V ).

IN

DS21335E-page 4

TC1014/TC1015/TC1185

TYPICAL PERFORMANCE CURVES (CONTINUED)

Note: Unless otherwise specified, all parts are measured at temperature = +25°C.

Ground Current vs. V

IN

V

vs. V

IN

OUT

80

70

60

50

40

30

20

10

0

3.5

3

V

I

= 3.3V

= 0

V

= 3.3V

= 150mA

OUT

LOAD

OUT

I

LOAD

2.5

2

1.5

1

C

= 1µF

IN

OUT

0.5

0

C

= 1µF

IN

OUT

0.

0.5

1

1.5

3.5

4

5

5.5

6

6.5 7

0

1

2

2.5

3

4.5

1.5

2

2.5

3

3.5 4.5 5 5.5 6.5

4

6

7

7.5

0 0.5

1

3.5 4 4.5 5 5.5 6 6.5 7 7.5

V (V)

IN

V

(V)

IN

FIGURE 2-7:

Ground Current vs. Input

FIGURE 2-10:

Input Voltage (V ).

Output Voltage (V

) vs.

OUT

Voltage (V ).

IN

Output Voltage vs. Temperature

V

vs. V

IN

OUT

3.320

3.315

3.310

3.305

3.300

3.295

3.290

3.285

3.280

3.275

3.5

V

I

= 3.3V

= 10mA

= 3.3V

OUT

LOAD

OUT

I

= 100mA

LOAD

3.0

2.5

2.0

1.5

1.0

0.5

0.0

LOAD

C

= 1µF

IN

= 1µF

OUT

C

= 1µF

IN

OUT

V

= 4.3V

IN

0

0.5

1

1.5

2

2.5

3

V

3.5

4

4.5

5

5.5

6

6.5 7

-40

-20

-10

0

20

40

C)

85

125

(V)

IN

TEMPERATURE (

°

FIGURE 2-8:

Input Voltage (V ).

Output Voltage (V

) vs.

FIGURE 2-11:

Temperature.

Output Voltage (V

) vs.

OUT

IN

Output Voltage vs. Temperature

3.290

3.288

3.286

3.284

3.282

3.280

3.278

3.276

3.274

V

I

= 3.3V

= 150mA

OUT

LOAD

C

= 1µF

IN

= 1µF

OUT

V

= 4.3V

IN

-40

-20

-10

0

20

40

C)

85

125

TEMPERATURE (

°

FIGURE 2-9:

Output Voltage (V

) vs.

OUT

Temperature.

DS21335E-page 5

TC1014/TC1015/TC1185

TYPICAL PERFORMANCE CURVES (CONTINUED)

Note: Unless otherwise specified, all parts are measured at temperature = +25°C.

Output Voltage vs. Temperature

4.994

4.992

4.990

4.988

4.986

4.984

4.982

4.980

4.978

4.976

4.974

5.025

5.020

5.015

5.010

5.005

5.000

4.995

4.990

4.985

V

= 5V

= 150mA

OUT

V

= 5V

= 10mA

OUT

I

LOAD

I

LOAD

C

V

= 1µF

= 6V

C

V

= 1µF

= 6V

IN

OUT

IN

OUT

IN

-40

-20

-10

0

20

40

C)

85

125

-40

-20

-10

0

20

40

C)

85

125

TEMPERATURE (

°

TEMPERATURE (

°

FIGURE 2-12:

Output Voltage (V

) vs.

FIGURE 2-14:

Output Voltage (V

) vs.

OUT

Temperature.

Temperature vs. Quiescent Current

70

60

50

40

30

20

10

0

80

70

60

50

40

30

20

10

0

V

I

= 5V

OUT

V

I

= 5V

OUT

= 10mA

LOAD

= 150mA

LOAD

C

V

= 1μF

IN

C

V

= 1µF

IN

= 1μF

OUT

= 1µF

OUT

IN

= 6V

IN

= 6V

-40

-20

-10

0

20

40

C)

85

125

-40

-20

-10

0

20

40

C)

85

125

TEMPERATURE (

°

TEMPERATURE (

°

FIGURE 2-13:

I

vs. Temperature.

FIGURE 2-15:

I

vs. Temperature.

GND

Output Noise vs. Frequency

Stability Region vs. Load Current

Power Supply Rejection Ratio

1000

-30

-35

10.0

1.0

C

= 1μF

OUT

to 10

I

= 10mA

= 4V

R

C

= 50Ω

OUT

LOAD

= 1

IN

μ

F

V

μ

F

IN

DC

IN

OUT

= 100mV

= 3V

= 1

μF

-40

-45

p-p

AC

100

10

1

= 0

OUT

BYP

C

= 0

IN

OUT

= 1μF

-50

-55

Stable Region

-60

-65

-70

-75

-80

0.1

0.0

0.1

0.01

0.01K 0.1K

10

1K

10K 100K 1000K

0

20 30 40 50 60 70 80 90 100

LOAD CURRENT (mA)

0.1K

1K

10K

1000K

100K

0.01K

FREQUENCY (Hz)

FIGURE 2-16:

AC Characteristics.

DS21335E-page 6

TC1014/TC1015/TC1185

TYPICAL PERFORMANCE CURVES (CONTINUED)

Note: Unless otherwise specified, all parts are measured at temperature = +25°C.

Measure Rise Time of 3.3V LDO Without Bypass Capacitor

Conditions: C = 1μF, C = 1μF, C = 0pF, I = 100mA

Measure Rise Time of 3.3V LDO With Bypass Capacitor

Conditions: C = 1μF, C = 1μF, C = 470pF, I = 100mA

IN OUT BYP LOAD

V

= 4.3V, Temp = 25°C, Rise Time = 184μS

V

= 4.3V, Temp = 25°C, Rise Time = 448μS

IN

V

SHDN

V

OUT

FIGURE 2-17:

Measure Rise Time of 3.3V

FIGURE 2-19:

Measure Rise Time of 3.3V

with Bypass Capacitor.

without Bypass Capacitor.

Measure Fall Time of 3.3V LDO With Bypass Capacitor

Measure Fall Time of 3.3V LDO Without Bypass Capacitor

Conditions: C = 1μF, C

IN OUT

= 1μF, C

BYP

= 470pF, I = 50mA

LOAD

Conditions: C = 1μF, C

IN OUT

= 1μF, C

BYP

= 0pF, I = 100mA

LOAD

V

= 4.3V, Temp = 25°C, Fall Time = 100μS

V

= 4.3V, Temp = 25°C, Fall Time = 52μS

IN

V

SHDN

V

OUT

FIGURE 2-18:

Measure Fall Time of 3.3V

FIGURE 2-20:

Measure Fall Time of 3.3V

with Bypass Capacitor.

without Bypass Capacitor.

DS21335E-page 7

TC1014/TC1015/TC1185

TYPICAL PERFORMANCE CURVES (CONTINUED)

Note: Unless otherwise specified, all parts are measured at temperature = +25°C.

Measure Rise Time of 5.0V LDO With Bypass Capacitor

Conditions: C = 1μF, C = 1μF, C = 470pF, I = 100mA

Measure Rise Time of 5.0V LDO Without Bypass Capacitor

Conditions: C = 1μF, C = 1μF, C = 0pF, I = 100mA

IN OUT BYP LOAD

V

= 6V, Temp = 25°C, Rise Time = 390μS

V

= 6V, Temp = 25°C, Rise Time = 192μS

IN

V

SHDN

V

OUT

FIGURE 2-21:

Measure Rise Time of 5.0V

FIGURE 2-23:

Measure Rise Time of 5.0V

with Bypass Capacitor.

without Bypass Capacitor.

Measure Fall Time of 5.0V LDO With Bypass Capacitor

Measure Fall Time of 5.0V LDO Without Bypass Capacitor

Conditions: C = 1μF, C

IN OUT

= 1μF, C

BYP

= 470pF, I

LOAD

= 50mA

Conditions: C = 1μF, C

IN OUT

= 1μF, C

BYP

= 0pF, I = 100mA

LOAD

V

= 6V, Temp = 25°C, Fall Time = 167μS

V

= 6V, Temp = 25°C, Fall Time = 88μS

IN

V

SHDN

V

OUT

FIGURE 2-22:

Measure Fall Time of 5.0V

FIGURE 2-24:

Measure Fall Time of 5.0V

with Bypass Capacitor.

without Bypass Capacitor.

DS21335E-page 8

TC1014/TC1015/TC1185

TYPICAL PERFORMANCE CURVES (CONTINUED)

Note: Unless otherwise specified, all parts are measured at temperature = +25°C.

Load Regulation of 3.3V LDO

Conditions: C = 1μF, C = 2.2μF, C = 470pF,

IN OUT BYP

Conditions: C = 1μF, C

IN OUT

= 2.2μF, C

BYP

= 470pF,

V

= V + 0.25V, Temp = 25°C

V

= V + 0.25V, Temp = 25°C

IN

OUT

IN

OUT

I

= 50mA switched in at 10kHz, V

is AC coupled

OUT

I

= 100mA switched in at 10kHz, V

is AC coupled

OUT

LOAD

I

LOAD

V

OUT

FIGURE 2-25:

Load Regulation of 3.3V

FIGURE 2-27:

Load Regulation of 3.3V

LDO.

Load Regulation of 3.3V LDO

Conditions: C = 1μF, C = 2.2μF, C

Line Regulation of 3.3V LDO

Conditions: V = 4V, + 1V Squarewave @2.5kHz

= 470pF,

IN OUT BYP

IN

V

= V + 0.25V, Temp = 25°C

IN

OUT

I

= 150mA switched in at 10kHz, V

is AC coupled

OUT

LOAD

I

V

LOAD

IN

V

OUT

V

OUT

C

I

= 0μF, C

OUT

LOAD

= 1μF, C

IN

= 470pF,

IN

BYP

are AC coupled

OUT

= 100mA, V & V

FIGURE 2-26:

Load Regulation of 3.3V

FIGURE 2-28:

Load Regulation of 3.3V

LDO.

DS21335E-page 9

TC1014/TC1015/TC1185

TYPICAL PERFORMANCE CURVES (CONTINUED)

Note: Unless otherwise specified, all parts are measured at temperature = +25°C.

Thermal Shutdown Response of 5.0V LDO

Conditions: V = 6V, C = 0μF, C = 1μF

Line Regulation of 5.0V LDO

Conditions: V = 6V, + 1V Squarewave @2.5kHz

IN IN

OUT

IN

V

IN

V

OUT

V

OUT

C

I

= 0μF, C

LOAD

= 1μF, C

IN

= 470pF,

IN

OUT BYP

= 100mA, V & V are AC coupled

OUT

I_LOADwas increased until temperature of die reached about 160°C, at

which time integrated thermal protection circuitry shuts the regulator

off when die temperature exceeds approximately 160°C. The regulator

remains off until die temperature drops to approximately 150°C.

FIGURE 2-29:

Line Regulation of 5.0V

FIGURE 2-30:

Thermal Shutdown

LDO.

Response of 5.0V LDO.

DS21335E-page 10

TC1014/TC1015/TC1185

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1:

PIN FUNCTION TABLE

Symbol

Pin No.

(5-Pin SOT-23)

Description

1

2

3

V_IN

Unregulated supply input.

Ground terminal.

GND

SHDN

Shutdown control input. The regulator is fully enabled when a logic high is applied to

this input. The regulator enters shutdown when a logic low is applied to this input.

During shutdown, output voltage falls to zero and supply current is reduced to

0.5 µA (maximum).

4

5

Bypass

V_OUT

Reference bypass input. Connecting a 470 pF to this input further reduces output

noise.

Regulated voltage output.

3.1

Input Voltage (V_IN)

3.3

Shutdown (SHDN)

Connect the V pin to the unregulated source

The Shutdown input is used to turn the LDO on

and off. When the SHDN pin is at a logic high

level, the LDO output is enabled. When the

SHDN pin is pulled to a logic low, the LDO output

is disabled. When disabled, the quiescent current

used by the LDO is less than 0.5 µA max.

IN

voltage. Like all low dropout linear regulators, low

source impedance is necessary for the stable

operation of the LDO. The amount of capacitance

required to ensure low source impedance will

depend on the proximity of the input source

capacitors or battery type. For most applications,

1.0 µF of capacitance will ensure stable operation

of the LDO circuit. The type of capacitor used can

be ceramic, tantalum or aluminum electrolytic.

The low Effective Series Resistance (ESR) char-

acteristics of the ceramic will yield better noise

and Power Supply Ripple Rejection (PSRR)

performance at high frequency.

3.4

Bypass

Connecting a low-value ceramic capacitor to the

Bypass pin will further reduce output voltage

noise and improve the PSRR performance of the

LDO. While smaller and larger values can be

used, these affect the speed at which the LDO

output voltage rises when the input power is

applied. The larger the bypass capacitor, the

slower the output voltage will rise.

3.2

Ground Terminal (GND)

Connect the ground pin to the input voltage

return. For the optimal noise and PSRR

performance, the GND pin of the LDO should be

tied to a quiet circuit ground. For applications

have switching or noisy inputs tie the GND pin to

the return of the output capacitor. Ground planes

help lower inductance and voltage spikes caused

by fast transient load currents and are

recommended for applications that are subjected

to fast load transients.

3.5

Output Voltage (V_OUT

)

Connect the output load to V

connect one side of the LDO output capacitor as

close as possible to the V pin.

of the LDO. Also

OUT

DS21335E-page 11

TC1014/TC1015/TC1185

4.1

Bypass Input

4.0

DETAILED DESCRIPTION

A 470 pF capacitor connected from the Bypass input to

ground reduces noise present on the internal

reference, which in turn, significantly reduces output

noise. If output noise is not a concern, this input may be

left unconnected. Larger capacitor values may be

used, but results in a longer time period to rated output

voltage when power is initially applied.

The TC1014, TC1015 and TC1185 are precision fixed

output voltage regulators (if an adjustable version is

needed, see the TC1070, TC1071 and TC1187 data

sheet (DS21353). Unlike bipolar regulators, the

TC1014, TC1015 and TC1185 supply current does not

increase with load current. In addition, the LDOs’ out-

put voltage is stable using 1 µF of capacitance over the

entire specified input voltage range and output current

range.

4.2

Output Capacitor

Figure 4-1 shows a typical application circuit. The

regulator is enabled anytime the shutdown input

(SHDN) is at or above V_IH, and disabled when SHDN is

at or below V_IL. SHDN may be controlled by a CMOS

logic gate or I/O port of a microcontroller. If the SHDN

input is not required, it should be connected directly to

the input supply. While in shutdown, the supply current

decreases to 0.05 µA (typical) and V_OUTfalls to zero

volts.

A 1 µF (min) capacitor from V_OUTto ground is required.

The output capacitor should have an effective series

resistance greater than 0.1Ω and less than 5Ω. A 1 µF

capacitor should be connected from V_INto GND if there

is more than 10 inches of wire between the regulator

and the AC filter capacitor, or if a battery is used as the

power source. Aluminum electrolytic or tantalum

capacitor types can be used. (Since many aluminum

electrolytic capacitors freeze at approximately -30°C,

solid tantalums are recommended for applications

operating below -25°C.) When operating from sources

other than batteries, supply-noise rejection and

transient response can be improved by increasing the

value of the input and output capacitors and employing

passive filtering techniques.

V_IN

V_OUT

+

1 µF

+

1 µF

TC1014

TC1015

TC1185

+

Battery

GND

4.3

Input Capacitor

A 1 µF capacitor should be connected from V_INto GND

if there is more than 10 inches of wire between the

regulator and this AC filter capacitor, or if a battery is

used as the power source. Aluminum electrolytic or

tantalum capacitors can be used (since many

SHDN

Bypass

470 pF

Reference

Bypass Cap

(Optional)

aluminum

electrolytic

capacitors

freeze

at

approximately -30°C, solid tantalum is recommended

for applications operating below -25°C). When

operating from sources other than batteries, supply-

noise rejection and transient response can be

improved by increasing the value of the input and

output capacitors and employing passive filtering

techniques.

Shutdown Control

(to CMOS Logic or Tie

to V_INif unused)

FIGURE 4-1:

Typical Application Circuit.

DS21335E-page 12

TC1014/TC1015/TC1185

Equation 5-1 can be used in conjunction with

Equation 5-2 to ensure regulator thermal operation is

within limits. For example:

5.0

5.1

THERMAL CONSIDERATIONS

Thermal Shutdown

Given:

Integrated thermal protection circuitry shuts the

regulator off when die temperature exceeds 160°C.

The regulator remains off until the die temperature

drops to approximately 150°C.

V_INMAX

V_OUTMIN

I_LOADMAX

T_JMAX

=

3.0V +10%

2.7V – 2.5%

40 mA

125°C

5.2

Power Dissipation

T_AMAX

55°C

The amount of power the regulator dissipates is

primarily a function of input and output voltage, and

output current. The following equation is used to

calculate worst-case actual power dissipation:

Find:

1. Actual power dissipation

2. Maximum allowable dissipation

Actual power dissipation:

EQUATION 5-1:

P_D≈ (V_INMAX– V_OUTMIN)I_LOADMAX

= [(3.0 x 1.1) – (2.7 x .975)]40 x 10^–3

= 26.7 mW

P_D≈ (V_INMAX– V_OUTMIN)I_LOADMAX

Where:

P_D= Worst-case actual power

dissipation

Maximum allowable power dissipation:

(T_JMAX– T_AMAX

P_DMAX= -------------------------------------------

θ_JA

)

V_INMAX= Maximum voltage on V_IN

V_OUTMIN= Minimum regulator output voltage

I_LOADMAX= Maximum output (load) current

(125 – 55)

= -------------------------

220

= 318 mW

The

maximum

allowable

power

dissipation

(Equation 5-2) is a function of the maximum ambient

temperature (T_A_MAX), the maximum allowable die

temperature (T_JMAX) and the thermal resistance from

junction-to-air (θ_JA). The 5-pin SOT-23 package has a

In this example, the TC1014 dissipates a maximum of

26.7 mW below the allowable limit of 318 mW. In a

similar manner, Equation 5-1 and Equation 5-2 can be

used to calculate maximum current and/or input

voltage limits.

θ_JAof approximately 220°C/Watt.

EQUATION 5-2:

5.3

Layout Considerations

(T_JMAX– T_AMAX

)

The primary path of heat conduction out of the package

is via the package leads. Therefore, layouts having a

ground plane, wide traces at the pads, and wide power

supply bus lines combine to lower θ_JAand therefore

increase the maximum allowable power dissipation

limit.

P_DMAX= -------------------------------------------

θ_JA

Where all terms are previously defined.

DS21335E-page 13

TC1014/TC1015/TC1185

6.0

6.1

PACKAGING INFORMATION

Package Marking Information

TABLE 6-1:

PART NUMBER CODE AND

TEMPERATURE RANGE

TC1014

Code

TC1015

Code

TC1185

Code

(V)

1.8

2.5

2.6

2.7

2.8

2.85

3.0

3.3

3.6

4.0

5.0

AY

A1

NB

A2

AZ

A8

A3

A5

A9

A0

A7

BY

B1

BT

B2

BZ

B8

B3

B5

B9

B0

B7

NY

N1

NT

N2

NZ

N8

N3

N5

N9

N0

N7

1 2 3 4

c&d represents part number code + temperature

range and voltage

represents year and 2-month period code

e

represents lot ID number

f

6.2

Taping Form

User Direction of Feed

Device

Marking

W, Width of

Carrier Tape

PIN 1

P,Pitch

Standard Reel Component

Orientation

Reverse Reel Component

Orientation

Carrier Tape, Number of Components per Reel and Reel Size

Package

Carrier Width (W)

Pitch (P)

Part Per Full Reel

Reel Size

7 in

5-Pin SOT-23

8 mm

4 mm

3000

DS21335E-page 14

TC1014/TC1015/TC1185

5-Lead Plastic Small Outline Transistor (OT) [SOT-23]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

b

N

E

E1

3

2

1

e

e1

D

A2

c

A

φ

A1

L

L1

Units

MILLIMETERS

Dimension Limits

MIN

NOM

MAX

Number of Pins

Lead Pitch

N

e

5

0.95 BSC

Outside Lead Pitch

Overall Height

e1

A

1.90 BSC

0.90

0.89

0.00

2.20

1.30

2.70

0.10

0.35

0°

–

1.45

1.30

0.15

3.20

1.80

3.10

0.60

0.80

30°

Molded Package Thickness

Standoff

A2

A1

E

Overall Width

Molded Package Width

Overall Length

Foot Length

E1

D

L

Footprint

L1

φ

Foot Angle

Lead Thickness

Lead Width

c

0.08

0.20

0.26

0.51

b

Notes:

1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.

2. Dimensioning and tolerancing per ASME Y14.5M.

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Microchip Technology Drawing C04-091B

DS21335E-page 15

TC1014/TC1015/TC1185

NOTES:

DS21335E-page 16

TC1014/TC1015/TC1185

APPENDIX A: REVISION HISTORY

Revision E (February 2007)

• Section 1.0 “Electrical characteristics”:

Changed Dropout Voltage from mA to µA.

• Updated “Product Identification System”,

page 19.

• Updated Section 6.0 “Packaging Information”.

Revision D (April 2006)

• Removed “ERROR is open circuited” from SHDN

pin description in Pin Function Table.

• Added verbiage for pinout descriptions in Pin

Function Table.

• Replaced verbiage in first paragraph of Section

4.0 Detailed Description.

• Added Section 4.3 Input Capacitor

Revision C (January 2006)

• Changed TR suffix to 713 suffix in Taping Form in

Package Marking Section

Revision B (May 2002)

• Converted Telcom data sheet to Microchip

standard for Analog Handbook

Revision A (February 2001)

• Original Release of this Document under Telcom.

DS21335E-page 17

TC1014/TC1015/TC1185

NOTES:

DS21335E-page 18

TC1014/TC1015/TC1185

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Examples:

PART NO.

Device

-X.X

X

XXXXX

a) TC1014-1.8VCT713: 1.8V, 5LD SOT-23,

Tape and Reel.

Output

Voltage

Temperature

Range

Package

b) TC1014-2.85VCT713: 2.85V, 5LD SOT-23,

Tape and Reel.

c) TC1014-3.3VCT713: 3.3V, 5LD SOT-23,

Tape and Reel.

Device:

TC1014: 50 mA LDO with Shutdown and V

TC1015: 100 mA LDO with Shutdown and V

TC1185: 150 mA LDO with Shutdown and V

Bypass

REF

Bypass

REF

a) TC1015-1.8VCT713: 1.8V, 5LD SOT-23,

Tape and Reel.

Output Voltage:

1.8

2.5

2.6

2.7

2.8

=

1.8V

2.5V

2.6V

2.7V

2.8V

b) TC1015-2.85VCT713: 2.85V, 5LD SOT-23,

Tape and Reel.

c) TC1015-3.0VCT713: 3.0V, 5LD SOT-23,

Tape and Reel.

2.85 = 2.85V

3.0

3.3

3.6

4.0

5.0

=

3.0V

3.3V

3.6V

4.0V

5.0V

a) TC1185-1.8VCT713: 1.8V, 5LD SOT-23,

Tape and Reel.

b) TC1185-2.8VCT713: 2.8V, 5LD SOT-23,

Tape and Reel.

Temperature Range:

Package:

V

=

-40° C to +125° C

CT713 = Plastic Small Outline Transistor (SOT-23),

5-lead, Tape and Reel

DS21335E-page 19

TC1014/TC1015/TC1185

NOTES:

DS21335E-page 20

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC,

PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and

SmartShunt are registered trademarks of Microchip

Technology Incorporated in the U.S.A. and other countries.

AmpLab, FilterLab, Linear Active Thermistor, Migratable

Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor

and The Embedded Control Solutions Company are

registered trademarks of Microchip Technology Incorporated

in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard,

dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,

ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,

In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,

MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,

PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,

PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,

rfPICDEM, Select Mode, Smart Serial, SmartTel, Total

Endurance, UNI/O, WiperLock and ZENA are trademarks of

Microchip Technology Incorporated in the U.S.A. and other

countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona, Gresham, Oregon and Mountain View, California. The

Company’s quality system processes and procedures are for its PIC^®

MCUs and dsPIC^®DSCs, KEELOQ^®code hopping devices, Serial

EEPROMs, microperipherals, nonvolatile memory and analog

products. In addition, Microchip’s quality system for the design and

manufacture of development systems is ISO 9001:2000 certified.

DS21335E-page 21

WORLDWIDE SALES AND SERVICE

AMERICAS

ASIA/PACIFIC

EUROPE

Corporate Office

Asia Pacific Office

Suites 3707-14, 37th Floor

Tower 6, The Gateway

Habour City, Kowloon

Hong Kong

Tel: 852-2401-1200

Fax: 852-2401-3431

India - Bangalore

Tel: 91-80-4182-8400

Fax: 91-80-4182-8422

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://support.microchip.com

Web Address:

www.microchip.com

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

India - New Delhi

Tel: 91-11-4160-8631

Fax: 91-11-4160-8632

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

India - Pune

Tel: 91-20-2566-1512

Fax: 91-20-2566-1513

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

Atlanta

Duluth, GA

Tel: 678-957-9614

Fax: 678-957-1455

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Japan - Yokohama

Tel: 81-45-471- 6166

Fax: 81-45-471-6122

China - Beijing

Tel: 86-10-8528-2100

Fax: 86-10-8528-2104

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

Korea - Gumi

Tel: 82-54-473-4301

Fax: 82-54-473-4302

Boston

China - Chengdu

Tel: 86-28-8665-5511

Fax: 86-28-8665-7889

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

Korea - Seoul

China - Fuzhou

Tel: 86-591-8750-3506

Fax: 86-591-8750-3521

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

China - Hong Kong SAR

Tel: 852-2401-1200

Fax: 852-2401-3431

Malaysia - Penang

Tel: 60-4-646-8870

Fax: 60-4-646-5086

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

UK - Wokingham

Tel: 44-118-921-5869

Fax: 44-118-921-5820

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

Detroit

Farmington Hills, MI

Tel: 248-538-2250

Fax: 248-538-2260

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

Kokomo

Kokomo, IN

Tel: 765-864-8360

Fax: 765-864-8387

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

Taiwan - Hsin Chu

Tel: 886-3-572-9526

Fax: 886-3-572-6459

China - Shenzhen

Tel: 86-755-8203-2660

Fax: 86-755-8203-1760

Taiwan - Kaohsiung

Tel: 886-7-536-4818

Fax: 886-7-536-4803

Los Angeles

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

China - Shunde

Tel: 86-757-2839-5507

Fax: 86-757-2839-5571

Taiwan - Taipei

Tel: 886-2-2500-6610

Fax: 886-2-2508-0102

Santa Clara

Santa Clara, CA

Tel: 408-961-6444

Fax: 408-961-6445

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

Toronto

Mississauga, Ontario,

Canada

Tel: 905-673-0699

Fax: 905-673-6509

China - Xian

Tel: 86-29-8833-7250

Fax: 86-29-8833-7256

12/08/06

DS21335E-page 22


型号：	TC1185-5.0VCT713-VAO
厂家：	MICROCHIP
描述：	Fixed Positive LDO Regulator, 5V, 0.4V Dropout, CMOS, PDSO5 光电二极管输出元件调节器
文件：	总22页 (文件大小：690K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TC1185-5.0VCT713-VAO [MICROCHIP]

相关型号：

TC1186

TC1186-1.8VCT

TC1186-1.8VCT713

TC1186-2.5VCHTR

TC1186-2.5VCT

TC1186-2.5VCT713

TC1186-2.5VCTTR

TC1186-2.6VCT713

TC1186-2.7VCH

TC1186-2.7VCHTR

TC1186-2.7VCT

TC1186-2.7VCT713