TC2015-3.0VCTTR_技术文档

TC2014/2015/2185

50 mA, 100 mA, 150 mA CMOS LDOs with

Shutdown and Reference Bypass

Features

General Description

• Low Supply Current: 80 µA (Max)

The TC2014, TC2015 and TC2185 are high-accuracy

(typically ±0.4%) CMOS upgrades for bipolar Low

Drop-out Regulators (LDOs), such as the LP2980.

Total supply current is typically 55 µA; 20 to 60 times

lower than in bipolar regulators.

• Low Dropout Voltage: 140 mV (Typ.) @ 150 mA

• High-Output Voltage Accuracy: ±0.4% (Typ.)

• Standard or Custom Output Voltages

• Power-Saving Shutdown Mode

The key features of the device include low noise oper-

ation (plus bypass reference), low dropout voltage

– typically 45 mV for the TC2014, 90 mV for the

TC2015, and 140 mV for the TC2185, at full load – and

fast response to step changes in load. Supply current

is reduced to 0.5 µA (max) and V_OUTfalls to zero when

the shutdown input is low. These devices also

• Reference Bypass Input for Ultra Low-Noise

Operation

• Fast Shutdown Response Time: 60 µsec (Typ.)

• Overcurrent and Overtemperature Protection

• Space-Saving 5-Pin SOT-23A Package

• Pin-Compatible Upgrades for Bipolar Regulators

incorporate

protection.

overcurrent and

overtemperature

• Wide Operating Temperature Range:

-40°C to +125°C

The TC2014, TC2015 and TC2185 are stable with an

output capacitor of 1 µF and have maximum output

currents of 50 mA, 100 mA and 150 mA, respectively.

For higher-output current versions, see the TC1107

(DS21356), TC1108 (DS21357) and TC1173

(DS21362) (I_OUT= 300 mA) data sheets.

• Standard Output Voltage Options:

- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,

3.3V, 5.0V

Applications

• Battery-Operated Systems

• Portable Computers

• Medical Instruments

• Instrumentation

Typical Application

1

5

V

OUT

IN

OUT

IN

• Cellular/GSM/PHS Phones

• Linear Post-Regulator for SMPS

• Pagers

+

1 µF

Related Literature

2

TC2014

TC2015

TC2185

GND

• Application Notes: AN765, AN766, AN776 and

AN792

Package Type

5-Pin SOT-23A

3

4

Bypass

SHDN

V

Bypass

4

OUT

0.01 µF

Reference

Bypass Cap

(Optional)

5

TC2014

TC2015

TC2185

Shutdown Control

(from Power Control Logic)

2

1

3

V

GND SHDN

IN

 2001-2012 Microchip Technology Inc.

DS21662F-page 1

TC2014/2015/2185

† Notice: Stresses above those listed under "Absolute

Maximum Ratings" may cause permanent damage to

the device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Input Voltage ................................................................... 7.0V

Output Voltage ....................................... (– 0.3) to (V + 0.3)

IN

Operating Temperature ......................... – 40°C < T < 125°C

J

Storage Temperature.................................. – 65°C to +150°C

Maximum Voltage on Any Pin ................ V +0.3V to – 0.3V

IN

Maximum Junction Temperature.................................. 150°C

ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise specified, V = V + 1V, I = 100 µA, C

= 3.3 µF, SHDN > V , T = +25°C.

IH A

IN

R

L

OUT

BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input Operating Voltage

V

2.7

50

—

6.0

—

V

Note 1

IN

Maximum Output

Current

I

mA

TC2014

TC2015

TC2185

Note 2

OUTMAX

100

150

– 2.0%

—

Output Voltage

V

± 0.4%

20

V

R

+ 2.0%

—

V

OUT

R

V

Temperature

TCV

ppm/°C Note 3

OUT

Coefficient

—

40

—

Line Regulation

V

/V

—

0.05

0.33

0.43

2

0.5

+1.0

+2.0

—

%

(V + 1V) < V < 6V

R IN

OUT

IN

Load Regulation

(Note 4)

V

/V

-1.0

-2.0

—

TC2014;TC2015: I = 0.1 mA to I

L OUTMAX

OUT OUT

TC2185: I = 0.1 mA to I

(Note 4)

L

OUTMAX

Dropout Voltage

V

– V

mV

Note 5

I = 100 µA

L

IN

OUT

—

45

70

I = 50 mA

L

—

90

140

210

80

TC2015; TC2185 I = 100 mA

L

—

140

55

TC2185

SHDN = V , I = 0

I = 150 mA

L

Supply Current

I

—

µA

IN

IH

L

Shutdown Supply

Current

I

—

0.05

0.5

SHDN = 0V

F  1 kHz, Cbypass = 0.01 µF

= 0V

INSD

Power Supply

Rejection Ratio

PSRR

—

55

—

dB

Output Short Circuit

Current

I

160

300

mA

V

OUT

OUTSC

Note 1: The minimum V has to meet two conditions: V = 2.7V and V = V + V .

DROPOUT

IN

R

2:

3:

V

is the regulator output voltage setting. For example: V = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.

R

–6

V_OUTMAX– V_OUTMIN  10

TCV_OUT

=

---------------------------------------------------------------------------

V_OUT T

4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested

over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating

effects are covered by the Thermal Regulation specification.

5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal

value.

6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,

excluding load or line regulation effects. Specifications are for a current pulse equal to I

at V = 6V for T = 10 ms.

MAX

IN

7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction-to-air (i.e. T , T ,  ).

A

J

JA

8: Time required for V

to reach 95% of V (output voltage setting), after V

is switched from 0 to V .

OUT

R

SHDN IN

DS21662F-page 2

 2001-2012 Microchip Technology Inc.

TC2014/2015/2185

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise specified, V = V + 1V, I = 100 µA, C

= 3.3 µF, SHDN > V , T = +25°C.

IH A

IN

R

L

OUT

BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.

Parameters

Sym

/P

Min

Typ

Max

Units

Conditions

Note 6, Note 7

Thermal Regulation

V

—

0.04

160

—

V/W

°C

OUT

D

Thermal Shutdown Die

Temperature

T

SD

Output Noise

eN

—

200

60

—

nV/Hz I = I

, F = 10 kHz

OUTMAX

L

470 pF from Bypass to GND

Response Time

(from Shutdown Mode)

(Note 8)

T

µs

V

IN

= 4V, I = 30 mA,

R

L

C

= 1 µF, C

= 10 µF

OUT

IN

SHDN Input

SHDN Input High

Threshold

V

60

—

%V

V

= 2.5V to 6.0V

IH

IN

SHDN Input Low

Threshold

V

—

15

IL

IN

Note 1: The minimum V has to meet two conditions: V = 2.7V and V = V + V .

DROPOUT

IN

R

2:

3:

V

is the regulator output voltage setting. For example: V = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.

R

–6

V_OUTMAX– V_OUTMIN  10

TCV_OUT

=

---------------------------------------------------------------------------

V_OUT T

4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested

over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating

effects are covered by the Thermal Regulation specification.

5: Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal

value.

6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,

excluding load or line regulation effects. Specifications are for a current pulse equal to I

at V = 6V for T = 10 ms.

MAX

IN

7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction-to-air (i.e. T , T ,  ).

A

J

JA

8: Time required for V

to reach 95% of V (output voltage setting), after V

is switched from 0 to V .

OUT

R

SHDN IN

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, V = +2.7V to +6.0V and V = GND.

DD

SS

Parameters

Temperature Ranges:

Sym

Min

Typ

Max

Units

Conditions

Extended Temperature Range

Operating Temperature Range

Storage Temperature Range

Thermal Package Resistances:

Thermal Resistance, 5L-SOT-23

T

-40

-65

—

+125

+150

°C

A

T

A

T

A



—

255

—

°C/W

JA

 2001-2012 Microchip Technology Inc.

DS21662F-page 3

TC2014/2015/2185

2.0

TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, V_IN= V_R+ 1V, I_L= 100 µA, C_OUT= 3.3 µF, SHDN > V_IH, T_A= +25°C.

63.0

60.0

57.0

54.0

51.0

48.0

45.0

1.820

1.815

1.810

1.805

1.800

1.795

1.790

1.785

V_IN= 2.8V

V_IN= 6.0V

V_R= 1.8V

_OUT= 3.3 µF

C

V_IN= 6.0V

V_IN= 2.8V

V_R= 1.8V

C_OUT= 3.3 µF

I

_L= 150 mA

Junction Temperature (°C)

FIGURE 2-1:

Supply Current vs. Junction

FIGURE 2-4:

Output Voltage vs. Junction

Temperature.

0.8

0.6

0.4

0.2

0

1.82

1.815

1.81

T_A= -45°C

T_A= +25°C

T_A= -45°C

1.805

1.8

T_A= +125°C

-0.2

1.795

1.79

V_R= 1.8V

_OUT= 3.3 µF

_L= 150 mA

V_R= 1.8V

_OUT= 3.3 µF

I_L= 150 mA

-0.4

-0.6

-0.8

C

I

C

1.785

2.8 3.2 3.6

4

4.4 4.8 5.2 5.6

6

2.8 3.2 3.6

4

4.4 4.8 5.2 5.6

6

Supply Voltage (V)

FIGURE 2-2:

Load Regulation vs. Supply

FIGURE 2-5:

Output Voltage vs. Supply

Voltage.

1.810

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

V_R= 1.8V

_OUT= 3.3 µF

I_L= 0.1 mA

C

_OUT= 3.3 μF

C

V_IN= 2.8V

V_IN= 6.0V

I_L= 150 mA

I_L= 100 mA

1.805

1.800

1.795

1.790

I_L= 50 mA

I_L= 20 mA

Note: Dropout Voltage is not

a tested parameter for 1.8V.

0.05

0.00

V_IN(min) ꢀ 2.7V

Junction Temperature (°C)

FIGURE 2-3:

Output Voltage vs. Junction

FIGURE 2-6:

Dropout Voltage vs.

Temperature.

Junction Temperature.

DS21662F-page 4

 2001-2012 Microchip Technology Inc.

TC2014/2015/2185

Note: Unless otherwise indicated, V_IN= V_R+ 1V, I_L= 100 µA, C_OUT= 3.3 µF, SHDN > V_IH, T_A= +25°C.

60.0

58.0

56.0

54.0

52.0

50.0

48.0

46.0

44.0

2.705

2.700

2.695

2.690

2.685

2.680

2.675

2.670

2.665

V_R= 2.7V

_OUT= 3.3 µF

V_IN= 3.7V

V_IN= 6.0V

C

V_IN= 6.0V

V_IN= 2.8V

V_R= 2.7V

_OUT= 3.3 µF

I_L= 150 mA

C

Temperature (°C)

Junction Temperature (°C)

FIGURE 2-7:

Supply Current vs. Junction

FIGURE 2-10:

Output Voltage vs. Junction

Temperature.

0.5

0.3

2.705

2.7

T_A= +25°C

T_A= -45°C

T_A= +25°C

2.695

2.69

2.685

2.68

0.1

-0.1

T_A= +125°C

V_R= 2.7V

C_OUT= 3.3 µF

V_R= 2.7V

C_OUT= 3.3 µF

I_L= 150 mA

2.675

2.67

-0.3

-0.5

T_A= +125°C

I_L= 150 mA

2.665

3.7

4

4.3

4.6

4.9

5.2

5.5

5.8

3.7

4

4.3 4.6 4.9 5.2 5.5 5.8

Supply Voltage (V)

FIGURE 2-8:

Load Regulation vs. Supply

FIGURE 2-11:

Output Voltage vs. Supply

Voltage.

2.690

2.688

2.686

2.684

2.682

2.680

2.678

2.676

0.160

V_R= 2.7V

_OUT= 3.3 µF

I_L= 150 mA

V_IN= 6.0V

C

0.120

0.080

0.040

0.000

V_IN= 3.7V

I_L= 100 mA

I_L= 50 mA

I_L= 20 mA

V_R= 2.7V

2.674

2.672

2.670

C

_OUT= 3.3 µF

I_L= 0.1 mA

Junction Temperature (°C)

FIGURE 2-9:

Output Voltage vs. Junction

FIGURE 2-12:

Dropout Voltage vs.

Temperature.

Junction Temperature.

 2001-2012 Microchip Technology Inc.

DS21662F-page 5

TC2014/2015/2185

Note: Unless otherwise indicated, V_IN= V_R+ 1V, I_L= 100 µA, C_OUT= 3.3 µF, SHDN > V_IH, T_A= +25°C.

60

57

54

51

48

45

0.12

0.10

0.08

0.06

0.04

0.02

0.00

V_R= 5.0V

_OUT= 3.3 µF

C

V_IN= 6.0V

I_L= 150 mA

I_L= 100 mA

I_L= 50 mA

V_R= 5.0V

C_OUT= 3.3 µF

Junction Temperature (°C)

FIGURE 2-13:

Supply Current vs. Junction

FIGURE 2-16:

Dropout Voltage vs.

Temperature.

Junction Temperature.

V

C

= 3.8V

= 2.8V

= 1 µF Ceramic

5.01

5.00

4.99

4.98

4.97

4.96

IN

OUT

IN

I_L= 150 mA

C

= 1 µF Ceramic

OUT

Frequency = 1 kHz

V

OUT

100mV/DIV

I_L= 100 mA

I_L= 0.1 mA

V_R= 5.0V

_OUT= 3.3 µF

V_IN= 6.0V

4.95

4.94

4.93

C

Load Current

150mA

Load

100mA

Junction Temperature (°C)

FIGURE 2-14:

Output Voltage vs. Junction

FIGURE 2-17:

Load Transient Response.

Temperature.

(C_OUT= 1 µF).

V

C

= 3.0V

= 2.8V

= 1 μF Ceramic

IN

OUT

IN

0.40

I_L= 150 mA

0.30

0.20

= 10 μF Ceramic

OUT

Frequency = 10 kHz

0.10

100mV / DIV

V

OUT

I_L= 100 mA

I_L= 50 mA

0.00

-0.10

-0.20

-0.30

-0.40

V_R= 5.0V

_OUT= 3.3 µF

V_IN= 6.0 V

C

Load Current

150mA

Load

100mA

Junction Temperature (°C)

FIGURE 2-15:

Load Regulation vs.

FIGURE 2-18:

Load Transient Response.

Junction Temperature.

(C_OUT= 10 µF).

DS21662F-page 6

 2001-2012 Microchip Technology Inc.

TC2014/2015/2185

Note: Unless otherwise indicated, V_IN= V_R+ 1V, I_L= 100 µA, C_OUT= 3.3 µF, SHDN > V_IH, T_A= +25°C.

FIGURE 2-19:

Line Transient Response.

FIGURE 2-22:

Wake-Up Response.

(C_OUT= 1 µF).

0

V_IN= 4.0V

C_OUT= 1µF Ceramic

V

OUT

V

_INAC= 100 mV

_OUTDC= 3.0V

-10

-20

-30

-40

-50

-60

-70

C

_BYPASS= 0.01 µF Ceramic

100mV/DIV

150mA

I_OUT= 150 mA

I_OUT= 100 mA

I_OUT= 50 mA

100mA

V

= 3.105V

IN

= 3.006V

OUT

C

R

= 1 μF Ceramic

IN

10

100

1k

1000

10k

100k

1M

10 00 10 00 100000

0

= 10 μF Ceramic

OUT

LOAD

= 20 Ω

Frequency (Hz)

FIGURE 2-20:

Load Transient Response in

FIGURE 2-23:

PSRR vs. Frequency

Dropout. (C_OUT= 10 µF).

(C_OUT= 1 µF Ceramic).

0

V_IN= 4.0V

C_OUT= 10 µF Ceramic

C_BYPASS= 0.01 µF Ceramic

V

_INAC= 100 mV

_OUTDC= 3.0V

-10

-20

-30

-40

-50

-60

-70

V

I_OUT= 150 mA

I_OUT= 100 mA

10

100

1k

1000

10k

100k

1M

10000 100000 100000

0

Frequency (Hz)

FIGURE 2-21:

Shutdown Delay Time.

FIGURE 2-24:

PSRR vs. Frequency

(C_OUT= 10 µF Ceramic).

 2001-2012 Microchip Technology Inc.

DS21662F-page 7

TC2014/2015/2185

Note: Unless otherwise indicated, V_IN= V_R+ 1V, I_L= 100 µA, C_OUT= 3.3 µF, SHDN > V_IH, T_A= +25°C.

10

10.00

0

-10

-20

-30

-40

-50

-60

-70

V_IN= 4.0V

V_INAC= 100 mV

C_OUT= 10 µF Tantalum

I_OUT= 150 mA

V_OUTDC= 3.0V

I_OUT= 100 µA

C_BYPASS= 470 pF

V_OUTDC= 3.0V

1

1.000

C_BYPASS= 0 µF

0.1

0.100

C_OUT= 10 µF

C_OUT= 1 µF

C_BYPASS= 0.01 µF

0.10

0.010

10

100

1k

1000

10k

100k

1M

0

10 00 10 00 100000

0.001

100

1k

10k

100k

1M

0

10

1000 10000 100000 100000

Frequency (Hz)

FIGURE 2-25:

PSRR vs. Frequency

FIGURE 2-26:

Output Noise vs. Frequency.

(C_OUT= 10 µF Tantalum).

DS21662F-page 8

 2001-2012 Microchip Technology Inc.

TC2014/2015/2185

3.3

Shutdown Control Input (SHDN)

3.0

PIN DESCRIPTIONS

The regulator is fully enabled when a logic-high is

applied to SHDN. The regulator enters shutdown when

a logic-low is applied to this input. During shutdown, the

output voltage falls to zero and the supply current is

reduced to 0.5 µA (max).

The descriptions of the pins are described in Table 3-1.

TABLE 3-1:

Pin No.

PIN FUNCTION TABLE

Symbol

Description

1

2

3

4

5

V_IN

Unregulated supply input

Ground terminal

3.4

Reference Bypass Input (Bypass)

GND

Connecting a low-value ceramic capacitor to Bypass

will further reduce output voltage noise and improve the

Power Supply Ripple Rejection (PSRR) performance

of the LDO. Typical values from 470 pF to 0.01 µF are

suggested. While smaller and larger values can be

used, these affect the speed at which the LDO output

voltage rises when input power is applied. The larger

the bypass capacitor, the slower the output voltage will

rise.

SHDN

Bypass

V_OUT

Shutdown control input

Reference bypass input

Regulated voltage output

3.1

Unregulated Supply Input (V )

IN

Connect the unregulated input supply to the V_INpin. If

there is a large distance between the input supply and

the LDO regulator, some input capacitance is neces-

sary for proper operation. A 1 µF capacitor, connected

from V_INto ground, is recommended for most

applications.

3.5

Regulated Voltage Output (V

)

OUT

Connect the output load to V_OUTof the LDO. Also con-

nect one side of the LDO output de-coupling capacitor

as close as possible to the V_OUTpin.

3.2

Ground Terminal (GND)

Connect the unregulated input supply ground return to

GND. Also connect one side of the 1 µF typical input

decoupling capacitor close to this pin and one side of

the output capacitor C_OUTto this pin.

 2001-2012 Microchip Technology Inc.

DS21662F-page 9

TC2014/2015/2185

4.1

Bypass Input

4.0

DETAILED DESCRIPTION

A 0.01 µF ceramic capacitor, connected from the

Bypass input to ground, reduces noise present on the

internal reference, which, in turn, significantly reduces

output noise. If output noise is not a concern, this input

may be left unconnected. Larger capacitor values may

be used, but the result is a longer time period to rated

output voltage when power is initially applied.

The TC2014, TC2015 and TC2185 are precision fixed-

output voltage regulators (if an adjustable version is

needed, see the TC1070, TC1071 and TC1187

(DS21353) data sheet). Unlike bipolar regulators, the

TC2014, TC2015 and TC2185 supply current does not

increase with load current. In addition, the LDO’s out-

put voltage is stable using 1 µF of ceramic or tantalum

capacitance over the entire specified input voltage

range and output current range.

4.2

Output Capacitor

Figure 4-1 shows a typical application circuit. The reg-

ulator is enabled anytime the shutdown input (SHDN)

is at or above V_IH, and disabled (shutdown) when

SHDN is at or below V_IL. SHDN may be controlled by a

CMOS logic gate or I/O port of a microcontroller. If the

SHDN input is not required, it should be connected

directly to the input supply. While in shutdown, the

supply current decreases to 0.05 µA (typical) and V_OUT

falls to zero volts.

A 1 µF (min) capacitor from V_OUTto ground is required.

The output capacitor should have an Effective Series

Resistance (ESR) of 0.01 to 5 for V_OUT 2.5V, and

0.05. to 5 for V_OUT< 2.5V. Ceramic, tantalum or alu-

minum electrolytic capacitors can be used. When using

ceramic capacitors, X5R and X7R dielectric material

are recommended due to their stable tolerance over

temperature. However, other dielectrics can be used as

long as the minimum output capacitance is maintained.

4.3

Input Capacitor

1

5

V

OUT

IN

OUT

A 1 µF capacitor should be connected from V_INto GND

if there is more than 10 inches of wire between the reg-

ulator and this AC filter capacitor, or if a battery is used

as the power source. Aluminum electrolytic or tantalum

capacitors can be used (since many aluminum electro-

lytic capacitors freeze at approximately -30°C, solid

tantalum are recommended for applications operating

below -25°C). When operating from sources other than

batteries, supply-noise rejection and transient

response can be improved by increasing the value of

the input and output capacitors and employing passive

filtering techniques.

+

1 µF

Battery

2

TC2014

TC2015

TC2185

GND

3

4

SHDN

Bypass

0.01 µF

Reference

Bypass Cap

(Optional)

Shutdown Control

(from Power Control Logic)

FIGURE 4-1:

Typical Application Circuit.

DS21662F-page 10

 2001-2012 Microchip Technology Inc.

TC2014/2015/2185

The P_Dequation can be used in conjunction with the

P_DMAXequation to ensure that regulator thermal

operation is within limits. For example:

5.0

5.1

THERMAL CONSIDERATIONS

Thermal Shutdown

Given:

Integrated thermal protection circuitry shuts the regula-

tor off when the die temperature exceeds approxi-

mately 160°C. The regulator remains off until the die

temperature cools to approximatley 150°C.

V_INMAX

= 3.0V +10%

V_OUTMIN= 2.7V – 2.5%

I_LOADMAX= 40 mA

T_JMAX

T_AMAX

= +125°C

= +55°C

5.2

Power Dissipation

The amount of power the regulator dissipates is primar-

ily a function of input voltage, output voltage and output

current.

Find:

1. Actual power dissipation

The following equation is used to calculate worst-case

power dissipation.

2. Maximum allowable dissipation

EQUATION 5-1:

Actual power dissipation:

P

 V_INMAX– V_OUTMINI_LMAX

D

P_D= V_INMAX– V_OUTMINI_LMAX

Where:

P_D

= 3.0  1.1 – 2.7  0.97540  10^–3

= 26.7mW

= Worst-case actual power dissipation

V_INMAX= Maximum voltage on V_IN

V_OUTMIN= Minimum regulator output voltage

Maximum allowable power dissipation:

I_LMAX

= Maximum output (load) current

T_JMAX– T_AMAX

P_DMAX

=

--------------------------------------

_JA

The maximum allowable power dissipation (P_DMAX) is

a function of the maximum ambient temperature

(T

_AMAX), the maximum allowable die temperature

125 – 55

= --------------------

220

(T_JMAX) (+125°C) and the thermal resistance from junc-

tion-to-air (_JA). The 5-Pin SOT-23A package has a _JA

of approximately 220°C/Watt when mounted on a

typical two-layer FR4 dielectric copper-clad PC board.

= 318mW

In this example, the TC2014 dissipates a maximum of

only 26.7 mW; far below the allowable limit of 318 mW.

In a similar manner, the P_Dand P_DMAXequations can

be used to calculate maximum current and/or input

voltage limits.

EQUATION 5-2:

T_JMAX– T_AMAX

P_DMAX

=

--------------------------------------

_JA

5.3

Layout Considerations

Where all terms are previously defined.

The primary path of heat conduction out of the package

is via the package leads. Therefore, layouts having a

ground plane, wide traces at the pads and wide power

supply bus lines combine to lower _JAand, therefore,

increase the maximum allowable power dissipation

limit.

 2001-2012 Microchip Technology Inc.

DS21662F-page 11

TC2014/2015/2185

6.0

6.1

PACKAGING INFORMATION

Package Marking Information

TABLE 6-1:

(V)

PART NUMBER CODE AND

TEMPERATURE RANGE

TC2014

TC2015

TC2185

1.8

2.5

2.6

2.7

2.8

2.85

3.0

3.3

5.0

PA

PB

PH

PC

PD

PE

PF

PG

PJ

RA

RB

RH

RC

RD

RE

RF

RG

RJ

UA

UB

UH

UC

UD

UE

UF

UG

UJ



& represents part number code + temperature

range and voltage



represents year and 2-month period code

represents lot ID number

6.2

Taping Form

Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices

User Direction of Feed

Device

Marking

W

PIN 1

P

Standard Reel Component Orientation

for 713 Suffix Device

(Mark Right Side Up)

Carrier Tape, Number of Components Per Reel and Reel Size:

Package

Carrier Width (W)

Pitch (P)

Part Per Full Reel

Reel Size

7 in.

5-Pin SOT-23A

8 mm

4 mm

3000

DS21662F-page 12

 2001-2012 Microchip Technology Inc.

TC2014/2015/2185

5-Lead Plastic Small Outline Transistor (OT) (SOT23)

Note: For the most current package drawings, please see the Microchip Packaging Specification located

at http://www.microchip.com/packaging

E

E1

p

B

p1

D

n

1



c

A

A2



L

A1



Units

INCHES

*

MILLIMETERS

NOM

5

Dimension Limits

MIN

NOM

MAX

MIN

MAX

n

p

Number of Pins

Pitch

5

.038

0.95

p1

Outside lead pitch (basic)

Overall Height

.075

.046

.043

.003

.110

.064

.116

.018

1.90

A

A2

A1

E

.035

.057

0.90

1.18

1.45

1.30

0.15

3.00

1.75

3.10

0.55

Molded Package Thickness

Standoff

.035

.000

.102

.059

.110

.014

.051

.006

.118

.069

.122

.022

10

0.90

0.00

2.60

1.50

2.80

0.35

1.10

0.08

Overall Width

2.80

Molded Package Width

Overall Length

E1

D

1.63

2.95

Foot Length

L

f

0.45

Foot Angle

0

5

0

5

10

c

Lead Thickness

Lead Width

.004

.014

.006

.017

.008

.020

10

0.09

0.35

0.15

0.43

0.20

0.50

B

a

Mold Draft Angle Top

Mold Draft Angle Bottom

0

5

0

5

10

b

10

0

*

Controlling Parameter

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side.

EIAJ Equivalent: SC-74A

Revised 09-12-05

Drawing No. C04-091

 2001-2012 Microchip Technology Inc.

DS21662F-page 13

TC2014/2015/2185

NOTES:

DS21662F-page 14

 2001-2012 Microchip Technology Inc.

TC2014/2015/2185

APPENDIX A: REVISION HISTORY

Revision F (December 2012)

• Added a note to each package outline drawing.

Revision E (May 2006)

• Page 1: Added overtemperature to bullet for over-

current protection in features and general descrip-

tion verbiage.

• Page 3: Added Thermal Shutdown die Tempera-

ture to electrical characteristics table.

• Page 3: Added Thermal Characteristics Table.

• Page 5: Added new section 5.1 and new ver-

biage.

• Page 13: Updated package outline drawing.

Revision D (November 2004)

• Page 2: Changed Absolute Maximum Ratings

from 6.5V to 7.0V.

• Packaging Information: Added package codes for

2.6V and 5.0V options.

• Product Identification System: Added 2.6V and

5.0V to Output voltage options.

Revision C (December 2002)

• Numerous changes

Revision B (May 2002)

• Numerous changes

Revision A (May 2001)

• Original Release of this Document.

 2001-2012 Microchip Technology Inc.

DS21662F-page 15

TC2014/2015/2185

NOTES:

DS21662F-page 16

 2001-2012 Microchip Technology Inc.

TC2014/2015/2185

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Examples:

PART NO.

Device

-XX

X

XXXX

a)

b)

c)

TC2014-1.8VCTTR: 5LD SOT-23-A, 1.8V,

Output

Voltage

Temperature

Range

Package

Tape and Reel.

TC2014-2.85VCTTR: 5LD SOT-23-A, 2.85V,

Tape and Reel.

TC2014-3.3VCTTR: 5LD SOT-23-A, 3.3V,

Tape and Reel.

Device:

TC2014: 50 mA LDO with Shutdown and V_REFBypass

TC2015: 100 mA LDO with Shutdown and V_REFBypass

TC2185: 150 mA LDO with Shutdown and V_REFBypass

a)

b)

c)

TC2015-1.8VCTTR: 5LD SOT-23-A, 1.8V,

Tape and Reel.

Output Voltage:

XX

=

1.8V

2.5V

2.6V

2.7V

2.8V

2.85V

3.0V

3.3V

5.0V

TC2015-2.85VCTTR: 5LD SOT-23-A, 2.85V,

Tape and Reel.

TC2015-3.0VCTTR: 5LD SOT-23-A, 3.0V,

Tape and Reel.

a)

b)

TC2185-1.8VCTTR: 5LD SOT-23-A, 1.8V,

Tape and Reel.

TC2185-2.8VCTTR: 5LD SOT-23-A, 2.8V,

Tape and Reel.

Temperature Range:

Package:

V

=

-40°C to +125°C

CTTR

=

Plastic Small Outline Transistor (SOT-23),

5-lead, Tape and Reel

 2001-2012 Microchip Technology Inc.

DS21662F-page 17

TC2014/2015/2185

NOTES:

DS21662F-page 18

 2001-2012 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC,

FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,

PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash

and UNI/O are registered trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

32

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,

MTP, SEEVAL and The Embedded Control Solutions

Company are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Silicon Storage Technology is a registered trademark of

Microchip Technology Inc. in other countries.

Analog-for-the-Digital Age, Application Maestro, BodyCom,

chipKIT, chipKIT logo, CodeGuard, dsPICDEM,

dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial

Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB

Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code

Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,

PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,

Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA

and Z-Scale are trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

GestIC and ULPP are registered trademarks of Microchip

Technology Germany II GmbH & Co. & KG, a subsidiary of

Microchip Technology Inc., in other countries.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

ISBN: 9781620768884

QUALITY MANAGEMENT SYSTEM

CERTIFIED BY DNV

Microchip received ISO/TS-16949:2009 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC^®MCUs and dsPIC^®DSCs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

== ISO/TS 16949 ==

 2001-2012 Microchip Technology Inc.

DS21662F-page 19

Worldwide Sales and Service

AMERICAS

ASIA/PACIFIC

EUROPE

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://www.microchip.com/

support

Asia Pacific Office

Suites 3707-14, 37th Floor

Tower 6, The Gateway

Harbour City, Kowloon

Hong Kong

Tel: 852-2401-1200

Fax: 852-2401-3431

India - Bangalore

Tel: 91-80-3090-4444

Fax: 91-80-3090-4123

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

India - New Delhi

Tel: 91-11-4160-8631

Fax: 91-11-4160-8632

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

India - Pune

Tel: 91-20-2566-1512

Fax: 91-20-2566-1513

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

Web Address:

www.microchip.com

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Japan - Osaka

Tel: 81-6-6152-7160

Fax: 81-6-6152-9310

Atlanta

Duluth, GA

Tel: 678-957-9614

Fax: 678-957-1455

China - Beijing

Tel: 86-10-8569-7000

Fax: 86-10-8528-2104

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

Japan - Tokyo

Tel: 81-3-6880- 3770

Fax: 81-3-6880-3771

China - Chengdu

Tel: 86-28-8665-5511

Fax: 86-28-8665-7889

Boston

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

Korea - Daegu

Tel: 82-53-744-4301

Fax: 82-53-744-4302

China - Chongqing

Tel: 86-23-8980-9588

Fax: 86-23-8980-9500

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

Korea - Seoul

China - Hangzhou

Tel: 86-571-2819-3187

Fax: 86-571-2819-3189

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

UK - Wokingham

Tel: 44-118-921-5869

Fax: 44-118-921-5820

Cleveland

Independence, OH

Tel: 216-447-0464

Fax: 216-447-0643

China - Hong Kong SAR

Tel: 852-2943-5100

Fax: 852-2401-3431

Malaysia - Kuala Lumpur

Tel: 60-3-6201-9857

Fax: 60-3-6201-9859

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

China - Nanjing

Tel: 86-25-8473-2460

Fax: 86-25-8473-2470

Malaysia - Penang

Tel: 60-4-227-8870

Fax: 60-4-227-4068

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

Detroit

Farmington Hills, MI

Tel: 248-538-2250

Fax: 248-538-2260

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

Indianapolis

Noblesville, IN

Tel: 317-773-8323

Fax: 317-773-5453

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

Taiwan - Hsin Chu

Tel: 886-3-5778-366

Fax: 886-3-5770-955

Los Angeles

China - Shenzhen

Tel: 86-755-8864-2200

Fax: 86-755-8203-1760

Taiwan - Kaohsiung

Tel: 886-7-213-7828

Fax: 886-7-330-9305

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Taiwan - Taipei

Tel: 886-2-2508-8600

Fax: 886-2-2508-0102

Santa Clara

Santa Clara, CA

Tel: 408-961-6444

Fax: 408-961-6445

China - Xian

Tel: 86-29-8833-7252

Fax: 86-29-8833-7256

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

Toronto

Mississauga, Ontario,

Canada

China - Xiamen

Tel: 905-673-0699

Fax: 905-673-6509

Tel: 86-592-2388138

Fax: 86-592-2388130

China - Zhuhai

Tel: 86-756-3210040

Fax: 86-756-3210049

11/29/12

DS21662F-page 20

 2001-2012 Microchip Technology Inc.


型号：	TC2015-3.0VCTTR
厂家：	MICROCHIP
描述：	50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass 50毫安100毫安， 150毫安CMOS LDO，具有关断和参考旁路线性稳压器IC 调节器电源电路光电二极管输出元件
文件：	总20页 (文件大小：371K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TC2015-3.0VCTTR [MICROCHIP]

相关型号：

TC2015-3.3VCTTR

TC2015-5.0VCTTR

TC20152802DH

TC20152803DH

TC20152804DH

TC20152805DH

TC20152807DH

TC2015280FDH

TC20162802DH

TC20162804DH

TC20162805DH

TC20162807DH