TC55RP1201ECBTR [MICROCHIP]

1.2 V FIXED POSITIVE LDO REGULATOR, 0.3 V DROPOUT, PDSO3, PLASTIC, EIAJ, SC-59, TO-236, SOT-23A, 3 PIN;
TC55RP1201ECBTR
型号: TC55RP1201ECBTR
厂家: MICROCHIP    MICROCHIP
描述:

1.2 V FIXED POSITIVE LDO REGULATOR, 0.3 V DROPOUT, PDSO3, PLASTIC, EIAJ, SC-59, TO-236, SOT-23A, 3 PIN

光电二极管
文件: 总18页 (文件大小:366K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Obsolete Device  
TC55  
1 µA Low Dropout Positive Voltage Regulator  
Features  
General Description  
• Low Dropout Voltage: 120 mV (typ) at 100 mA,  
380 mV (typ) at 200 mA  
The TC55 Series is a collection of CMOS low dropout,  
positive voltage regulators that can source up to  
250 mA of current, with an extremely low input-output  
voltage differential of 380 mV (typ) at 200 mA.  
• High Output Current: 250 mA (VOUT = 5.0V)  
• High Accuracy Output Voltage: ±2% (max)  
(±1% Semi-Custom Version)  
The TC55’s low dropout voltage, combined with the low  
current consumption of only 1.1 µA (typ), makes it ideal  
for battery operation. The low voltage differential (drop-  
out voltage) extends the battery operating lifetime. It  
also permits high currents in small packages when  
operated with minimum VIN – VOUT differentials.  
• Low Power Consumption: 1.1 µA (typ)  
• Low Temperature Drift: ±100 ppm/°C (typ)  
• Excellent Line Regulation: 0.2%/V (typ)  
• Package Options: 3-Pin SOT-23A, 3-Pin SOT-89  
and 3-Pin TO-92  
The circuit also incorporates short-circuit protection to  
ensure maximum reliability.  
• Short-Circuit Protection  
• Standard Output Voltage Options: 1.2V, 1.8V,  
2.5V, 3.0V, 3.3V, 5.0V  
Functional Block Diagram  
VIN  
VOUT  
Applications  
• Battery-Powered Devices  
• Cameras and Portable Video Equipment  
• Pagers and Cellular Phones  
• Solar Powered Instruments  
• Consumer Products  
Short-Circuit  
Protection  
+
Voltage  
Reference  
Package Types  
3-Pin SOT-23A  
3-Pin SOT-89  
VIN  
3
VIN  
GND  
TC55  
TC55  
1
2
1
2
3
GND  
VOUT  
GND VIN VOUT  
3-Pin TO-92  
1 2 3  
Bottom  
View  
GND VIN VOUT  
Note: 3-Pin SOT-23A is equivalent to the  
EIAJ SC-59.  
© 2005 Microchip Technology Inc.  
DS21435F-page 1  
TC55  
† Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. These  
are stress ratings only and functional operation of the device  
at these or any other conditions above those indicated in the  
operation sections of the specifications is not implied.  
Exposure to Absolute Maximum Rating conditions for  
extended periods may affect device reliability.  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Absolute Maximum Ratings†  
Input Voltage ........................................................+12V  
Output Current (Continuous)......... PD/(VIN – VOUT)mA  
Output Current (peak) ..................................... 500 mA  
Output Voltage..................(VSS – 0.3V) to (VIN + 0.3V)  
PIN FUNCTION TABLE  
Symbol  
Description  
Ground Terminal  
Continuous Power Dissipation:  
GND  
VOUT  
VIN  
3-Pin SOT-23A ..........................................240 mW  
3-Pin SOT-89 ............................................500 mW  
3-Pin TO-92...............................................440 mW  
Regulated Voltage Output  
Unregulated Supply Input  
TC55RP50: ELECTRICAL CHARACTERISTICS  
Electrical Specifications: Unless otherwise specified, V  
(S) = 5.0V, T = +25°C (see Note 1).  
OUT  
A
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Output Voltage  
4.90  
5.0  
5.10  
I
= 40 mA  
OUT  
V
(A)  
V
OUT  
V
V
V
= 6.0V  
IN  
Maximum Output Current  
Load Regulation  
I
250  
mA  
mV  
mV  
= 6.0V, V  
(A) 4.5V  
OUTMAX  
IN  
IN  
OUT  
ΔV  
40  
80  
= 6.0V, 1 mA I  
100 mA  
OUT  
OUT  
I/O Voltage Difference  
V
120  
380  
300  
600  
I
I
= 100 mA  
= 200 mA  
DIF  
OUT  
OUT  
Current Consumption  
Voltage Regulation  
I
1.1  
0.2  
3.0  
0.3  
µA  
V
= 6.0V  
IN  
SS  
V
(A)•100  
%/V  
I
= 40 mA, 6.0V V 10.0V  
OUT  
OUT  
IN  
ΔV •V  
(S)  
IN OUT  
Input Voltage  
V
10  
V
IN  
6
Temperature Coefficient of Output  
Voltage  
ΔV  
(A)•10  
±100  
ppm/°C I  
= 40 mA, -40°C T ≤ +85°C  
OUT  
OUT  
A
V
(S)•ΔT  
A
OUT  
Long-Term Stability  
0.5  
%
T = +125°C, 1000 Hours  
A
Note 1:  
V
(S): Preset value of output voltage; V  
(A): Actual value of output voltage; V : Definition of I/O voltage  
OUT  
OUT DIF  
difference = {V 1 – V  
(A)}; V  
(A): Output voltage when I  
is fixed and V = V  
(S) + 1.0V; V 1: Input voltage  
IN  
OUT  
OUT  
OUT  
IN  
OUT  
IN  
when the output voltage is 98% V  
(A).  
OUT  
TC55RP40: ELECTRICAL CHARACTERISTICS  
Electrical Specifications: Unless otherwise specified, V  
(S) = 4.0V, T = +25°C (see Note 1).  
OUT  
A
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Output Voltage  
V
I
= 40 mA  
OUT  
V
(A)  
OUT  
3.92  
4.0  
4.08  
V
V
V
= 5.0V  
IN  
IN  
IN  
Maximum Output Current  
Load Regulation  
I
200  
mA  
mV  
mV  
= 5.0V, V  
(A) 3.6V  
OUTMAX  
OUT  
ΔV  
45  
90  
= 5.0V, 1 mA I  
100 mA  
OUT  
OUT  
I/O Voltage Difference  
V
170  
400  
330  
630  
I
I
= 100 mA  
= 200 mA  
DIF  
OUT  
OUT  
Current Consumption  
Voltage Regulation  
I
1.0  
0.2  
2.9  
0.3  
µA  
V
= 5.0V  
IN  
SS  
V
(A)•100  
%/V  
I
= 40 mA, 5.0V V 10.0V  
OUT  
OUT  
IN  
ΔV •V  
(S)  
IN OUT  
Input Voltage  
V
10  
V
IN  
6
Temperature Coefficient of Output  
Voltage  
ΔV  
(A)•10  
±100  
ppm/°C I  
= 40 mA, -40°C T ≤ +85°C  
OUT  
OUT  
A
V
(S)•ΔT  
A
OUT  
Long-Term Stability  
0.5  
%
T = +125°C, 1000 Hours  
A
Note 1:  
V
(S): Preset value of output voltage; V  
(A): Actual value of output voltage; V : Definition of I/O voltage  
OUT  
OUT DIF  
difference = {V 1 – V  
(A)}; V  
(A): Output voltage when I  
is fixed and V = V  
(S) + 1.0V; V 1: Input voltage  
IN  
OUT  
OUT  
OUT  
IN  
OUT IN  
when the output voltage is 98% V  
(A).  
OUT  
DS21435F-page 2  
© 2005 Microchip Technology Inc.  
TC55  
TC55RP33: ELECTRICAL CHARACTERISTICS  
Electrical Specifications: Unless otherwise specified, V  
(S) = 3.3V, T = +25°C (see Note 1).  
OUT  
A
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Output Voltage  
V
I
= 40 mA  
OUT  
V
(A)  
OUT  
3.23  
3.30  
3.37  
V
V
V
= 4.3V  
IN  
IN  
IN  
Maximum Output Current  
Load Regulation  
I
150  
mA  
mV  
= 4.3V, V  
(A) 3.0V  
OUT  
OUTMAX  
ΔV  
45  
90  
= 4.3V,  
OUT  
1 mA I  
80 mA  
OUT  
I/O Voltage Difference  
V
180  
400  
360  
700  
mV  
I
I
= 80 mA  
= 160 mA  
DIF  
OUT  
OUT  
Current Consumption  
Voltage Regulation  
I
1.0  
0.2  
2.9  
0.3  
µA  
V
= 4.3V  
SS  
IN  
V
(A)•100  
%/V  
I
= 40 mA,  
OUT  
OUT  
4.3V I  
10.0V  
OUT  
ΔV •V  
(S)  
IN OUT  
Input Voltage  
V
10  
V
IN  
6
Temperature Coefficient of Output  
Voltage  
ΔV  
(A)•10  
±100  
ppm/°C I  
= 40 mA, -40°C T ≤ +85°C  
OUT A  
OUT  
V
(S)•ΔT  
A
OUT  
Long-Term Stability  
0.5  
%
T = +125°C, 1,000 Hours  
A
Note 1:  
V
(S): Preset value of output voltage; V  
(A): Actual value of output voltage; V : Definition of I/O voltage  
OUT  
OUT DIF  
difference = {V 1 – V  
(A)}; V  
(A): Output voltage when I  
is fixed and V = V  
(S) + 1.0V; V 1: Input voltage  
IN  
OUT  
OUT  
OUT  
IN  
OUT  
IN  
when the output voltage is 98% V  
(A).  
OUT  
TC55RP30: ELECTRICAL CHARACTERISTICS  
Electrical Specifications: Unless otherwise specified, V  
(S) = 3.0V, T = +25°C (see Note 1).  
OUT  
A
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Output Voltage  
V
I
= 40 mA  
OUT  
V
(A)  
OUT  
2.94  
3.0  
3.06  
V
V
V
= 4.0V  
IN  
IN  
IN  
Maximum Output Current  
Load Regulation  
I
150  
mA  
mV  
mV  
= 4.0V, V  
(A) 2.7V  
OUTMAX  
OUT  
ΔV  
45  
90  
= 4.0V, 1 mA I  
80 mA  
OUT  
OUT  
I/O Voltage Difference  
V
180  
400  
360  
700  
I
I
= 80 mA  
= 160 mA  
DIF  
OUT  
OUT  
Current Consumption  
Voltage Regulation  
I
0.9  
0.2  
2.8  
0.3  
µA  
V
= 4.0V  
IN  
SS  
V
(A)•100  
%/V  
I
= 40 mA, 4.0V V 10.0V  
OUT  
OUT  
IN  
ΔV •V  
(S)  
IN OUT  
Input Voltage  
V
10  
V
IN  
6
Temperature Coefficient of Output  
Voltage  
ΔV  
(A)•10  
±100  
ppm/°C I  
= 40 mA, -40°C T ≤ +85°C  
OUT  
OUT  
A
V
(S)•ΔT  
A
OUT  
Long-Term Stability  
0.5  
%
T = +125°C, 1000 Hours  
A
Note 1:  
V
(S): Preset value of output voltage; V  
(A): Actual value of output voltage; V : Definition of I/O voltage  
OUT  
OUT DIF  
difference = {V 1 – V  
(A)}; V  
(A): Output voltage when I  
is fixed and V = V  
(S) + 1.0V; V 1: Input voltage  
IN  
OUT  
OUT  
OUT  
IN  
OUT  
IN  
when the output voltage is 98% V  
(A).  
OUT  
© 2005 Microchip Technology Inc.  
DS21435F-page 3  
TC55  
TC55RP25: ELECTRICAL CHARACTERISTICS  
Electrical Specifications: Unless otherwise specified, V  
(S) = 2.5V, T = +25°C (see Note 1).  
OUT  
A
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Output Voltage  
V
I
= 40 mA  
OUT  
V
(A)  
OUT  
2.45  
2.5  
2.55  
V
V
V
= 3.5V  
IN  
IN  
IN  
Maximum Output Current  
Load Regulation  
I
125  
mA  
mV  
= 3.5V, V  
(A) 2.25V  
OUT  
OUTMAX  
ΔV  
45  
90  
= 3.5V,  
OUT  
1 mA I  
60 mA  
OUT  
I/O Voltage Difference  
V
180  
400  
360  
700  
mV  
I
I
= 60 mA  
= 120 mA  
DIF  
OUT  
OUT  
Current Consumption  
Voltage Regulation  
I
1.0  
0.2  
2.8  
0.3  
µA  
V
= 3.5V  
SS  
IN  
V
(A)•100  
%/V  
I
= 40 mA,  
OUT  
OUT  
3.5V I  
10.0V  
OUT  
ΔV •V  
(S)  
IN OUT  
Input Voltage  
V
10  
V
IN  
6
Temperature Coefficient of Output  
Voltage  
ΔV  
(A)•10  
±100  
ppm/°C I  
= 40 mA, -30°C T ≤ +80°C  
OUT A  
OUT  
V
(S)•ΔT  
A
OUT  
Long-Term Stability  
0.5  
%
T = +125°C, 1,000 Hours  
A
Note 1:  
V
(S): Preset value of output voltage; V  
(A): Actual value of output voltage; V : Definition of I/O voltage  
OUT  
OUT DIF  
difference = {V 1 – V  
(A)}; V  
(A): Output voltage when I  
is fixed and V = V  
(S) + 1.0V; V 1: Input voltage  
IN  
OUT  
OUT  
OUT  
IN  
OUT  
IN  
when the output voltage is 98% V  
(A).  
OUT  
TC55RP18: ELECTRICAL CHARACTERISTICS  
Electrical Specifications: Unless otherwise specified, V  
(S) = 1.8V, T = +25°C (see Note 1).  
OUT  
A
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Output Voltage  
V
I
= 0.5 mA  
OUT  
V
(A)  
OUT  
1.764  
1.8  
1.836  
V
V
V
= 2.8V  
IN  
IN  
IN  
Maximum Output Current  
Load Regulation  
I
110  
mA  
mV  
= 2.8V, V  
(A) 1.62V  
OUT  
OUTMAX  
ΔV  
30  
= 2.8V,  
OUT  
1 mA I  
30 mA  
OUT  
I/O Voltage Difference  
Current Consumption  
Voltage Regulation  
V
300  
3.0  
mV  
µA  
I
= 0.5 mA  
= 2.8V  
DIF  
OUT  
I
V
SS  
IN  
V
(A)•100  
0.25  
%/V  
I
= 0.5 mA,  
OUT  
OUT  
2.8V I  
10.0V  
OUT  
ΔV •V  
(S)  
IN OUT  
Input Voltage  
V
6.0  
V
IN  
6
Temperature Coefficient of Output  
Voltage  
ΔV  
(A)•10  
±100  
ppm/°C I  
= 0.5 mA, -30°C T ≤ +80°C  
OUT A  
OUT  
V
(S)•ΔT  
A
OUT  
Long-Term Stability  
0.5  
%
T = +125°C, 1,000 Hours  
A
Note 1:  
V
(S): Preset value of output voltage; V  
(A): Actual value of output voltage; V : Definition of I/O voltage  
OUT  
OUT DIF  
difference = {V 1 – V  
(A)}; V  
(A): Output voltage when I  
is fixed and V = V  
(S) + 1.0V; V 1: Input voltage  
IN  
OUT  
OUT  
OUT  
IN  
OUT IN  
when the output voltage is 98% V  
(A).  
OUT  
DS21435F-page 4  
© 2005 Microchip Technology Inc.  
TC55  
TC55RP12: ELECTRICAL CHARACTERISTICS  
Electrical Specifications: Unless otherwise specified, V  
(S) = 1.2V, T = +25°C (see Note 1).  
OUT  
A
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Output Voltage  
V
I
= 0.5 mA  
OUT  
V
(A)  
OUT  
1.176  
1.200  
1.224  
V
V
V
= 2.2V  
IN  
IN  
IN  
Maximum Output Current  
Load Regulation  
I
50  
mA  
mV  
= 2.2V, V  
(A) 1.08V  
OUT  
OUTMAX  
ΔV  
30  
= 2.2V,  
OUT  
1 mA I  
30 mA  
OUT  
I/O Voltage Difference  
Current Consumption  
Voltage Regulation  
V
300  
3.0  
mV  
µA  
I
= 0.5 mA  
= 2.2V  
DIF  
OUT  
I
V
SS  
IN  
V
(A)•100  
0.25  
%/V  
I
= 0.5 ,  
OUT  
OUT  
2.2V I  
10.0V  
OUT  
ΔV •V  
(S)  
IN OUT  
Input Voltage  
V
6.0  
V
IN  
6
Temperature Coefficient of Output  
Voltage  
ΔV  
(A)•10  
±100  
ppm/°C I  
= 0.5 mA, -30°C T ≤ +80°C  
OUT A  
OUT  
V
(S)•ΔT  
A
OUT  
Long-Term Stability  
0.5  
%
T = +125°C, 1,000 Hours  
A
Note 1:  
V
(S): Preset value of output voltage; V  
(A): Actual value of output voltage; V : Definition of I/O voltage  
OUT  
OUT DIF  
difference = {V 1 – V  
(A)}; V  
(A): Output voltage when I  
is fixed and V = V  
(S) + 1.0V; V 1: Input voltage  
IN  
OUT  
OUT  
OUT  
IN  
OUT  
IN  
when the output voltage is 98% V  
(A).  
OUT  
TEMPERATURE CHARACTERISTICS  
Electrical Specifications: Unless otherwise specified, V  
(S) = 5.0V, T = +25°C.  
A
OUT  
Parameters  
Temperature Ranges  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Specified Temperature Range (E)  
Storage Temperature Range  
T
-40  
-65  
+85  
ºC  
ºC  
A
T
+150  
A
Package Thermal Resistances  
Thermal Resistance, 3L-SOT-23A  
Thermal Resistance, 3L-SOT-89  
θ
θ
359  
110  
ºC/W  
JA  
JA  
ºC/W When mounted on 1 square  
inch of copper  
Thermal Resistance, 3L-TO-92  
θ
131.9  
ºC/W  
JA  
© 2005 Microchip Technology Inc.  
DS21435F-page 5  
TC55  
2.0  
TYPICAL PERFORMANCE CURVES  
Note:  
The graphs and tables provided following this note are a statistical summary based on a limited number of  
samples and are provided for informational purposes only. The performance characteristics listed herein  
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified  
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.  
Notes: Unless otherwise specified, VOUT(S) = 3.0V, 5.0V, TA = +25°C, CIN = 1 µF Tantalum, COUT = 1 µF Tantalum.  
V
= 4.0V  
2.0  
1.8  
1.6  
IN  
3.1  
3.0  
2.9  
1.4  
1.2  
1.0  
-30°C  
25°C  
80°C  
0.8  
0.6  
0.4  
0.2  
0.0  
-0.2  
25°C  
2.8  
2.7  
80°C  
-30°C  
0
20 40 60 80 100 120 140 160  
OUTPUT CURRENT I (mA)  
0
20 40 60 80 100 120 140 160  
OUTPUT CURRENT I (mA)  
OUT  
OUT  
FIGURE 2-1:  
Output Voltage vs. Output  
FIGURE 2-4:  
Dropout Voltage vs. Output  
Current (TC55RP3002).  
Current (TC55RP3002).  
T
= 25°C  
V
= 4.0V  
OPR  
IN  
3.2  
3.0  
3.10  
3.08  
3.06  
I
= 1 mA  
OUT  
40 mA  
3.04  
3.02  
2.8  
2.6  
2.4  
2.2  
I
= 10 mA  
OUT  
3.00  
2.98  
2.96  
2.94  
40 mA  
10 mA  
2.92  
2.90  
-40 -20  
2.5  
3.0  
INPUT VOLTAGE V (V)  
3.5  
0
20 40  
60  
80 100  
OPERATING TEMPERATURE (°C)  
IN  
FIGURE 2-2:  
Output Voltage vs. Input  
FIGURE 2-5:  
Output Voltage vs.  
Voltage (TC55RP3002).  
Operating Temperature (TC55RP3002).  
T
= 25°C  
T
OPR  
= 25°C  
OPR  
3.05  
3.04  
1.5  
1.4  
1.3  
1.2  
3.03  
3.02  
I
= 1 mA  
OUT  
3.01  
3.00  
2.99  
2.98  
2.97  
2.96  
2.95  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
3
4
10  
5
6
7
8
9
3
4
5
6
7
8
9
10  
INPUT VOLTAGE V (V)  
INPUT VOLTAGE V (V)  
IN  
IN  
FIGURE 2-3:  
Output Voltage vs. Input  
FIGURE 2-6:  
Supply Current vs. Input  
Voltage (TC55RP3002).  
Voltage (TC55RP3002).  
DS21435F-page 6  
© 2005 Microchip Technology Inc.  
TC55  
Note: Unless otherwise indicated, VOUT(S) = 3.0V, 5.0V, TA = +25°C, CIN = 1 µF Tantalum, COUT = 1 µF Tantalum.  
T = 25°C  
OPR  
V
= 4.0V  
IN  
5.2  
5.0  
1.5  
1.4  
1.8  
1.2  
40 mA  
I
= 1 mA  
OUT  
4.8  
4.6  
4.4  
4.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
10 mA  
4.5  
5.0  
INPUT VOLTAGE V (V)  
5.5  
-40 -20  
0
20 40  
60  
80 100  
OPERATING TEMPERATURE (°C)  
IN  
FIGURE 2-7:  
Supply Current vs.  
FIGURE 2-10:  
Output Voltage vs. Input  
Operating Temperature (TC55RP3002).  
Voltage (TC55RP5002).  
T
= 25°C  
OPR  
5.05  
5.04  
5.03  
5
4
3
200  
160  
5.02  
5.01  
5.00  
4.99  
4.98  
4.97  
4.98  
4.95  
I
= 1 mA  
OUT  
Output Voltage  
120  
80  
40  
2
Output Current  
1
0
40 mA  
1 mA  
0
5
6
7
9
8
10  
TIME (2 msec/div)  
INPUT VOLTAGE V (V)  
IN  
FIGURE 2-8:  
Load Transient Response  
FIGURE 2-11:  
Output Voltage vs. Input  
(TC55RP3002).  
Voltage (TC55RP5002).  
V
= 6.0V  
IN  
2.0  
1.8  
1.6  
5.1  
5.0  
4.9  
4.8  
1.4  
-30°C  
25°C  
1.2  
1.0  
0.8  
0.6  
80°C  
25°C  
80°C  
0.4  
0.2  
-30°C  
0.0  
-0.2  
4.7  
0
0
40  
80  
120  
160  
(mA)  
200  
40  
80  
120  
160  
200  
OUTPUT CURRENT I  
OUT  
OUTPUT CURRENT I  
OUT  
(mA)  
FIGURE 2-9:  
Output Voltage vs. Output  
FIGURE 2-12:  
Dropout Voltage vs. Output  
Current (TC55RP5002).  
Current (TC55RP5002).  
© 2005 Microchip Technology Inc.  
DS21435F-page 7  
TC55  
Note: Unless otherwise indicated, VOUT(S) = 3.0V, 5.0V, TA = +25°C, CIN = 1 µF Tantalum, COUT = 1 µF Tantalum.  
I
= 1 mA  
OUT  
Input  
V
= 6.0V  
IN  
8.0  
7.5  
5.10  
5.08  
5.06  
Voltage  
7.0  
5.04  
6.5  
6.0  
5.5  
5.0  
5.02  
5.00  
4.98  
4.96  
4.94  
I
= 10 mA  
OUT  
40 mA  
Output  
Voltage  
5.0  
4.92  
4.90  
-40 -20  
4.5  
4.0  
0
20 40  
60  
80 100  
-1  
0
1
2
3
OPERATING TEMPERATURE (°C)  
TIME (msec)  
FIGURE 2-13:  
Output Voltage vs.  
FIGURE 2-16:  
Input Transient Response,  
Operating Temperature (TC55RP5002).  
1 mA (TC55RP5002).  
T
= 25°C  
OPR  
I
= 10 mA  
Input  
Voltage  
OUT  
2.0  
1.9  
1.8  
1.7  
8.0  
7.5  
7.0  
1.6  
1.4  
1.3  
1.2  
6.5  
6.0  
5.5  
5.0  
Output  
Voltage  
1.1  
1.0  
0.5  
4.5  
4.0  
5
7
8
9
10  
6
-1  
0
1
2
3
INPUT VOLTAGE V (V)  
IN  
TIME (msec)  
FIGURE 2-14:  
Supply Current vs. Input  
FIGURE 2-17:  
Input Transient Response,  
Voltage (TC55RP5002).  
10 mA (TC55RP5002).  
V
= 6.0V  
IN  
2.0  
1.9  
7
6
200  
160  
1.8  
1.7  
Output Voltage  
5
4
120  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
80  
40  
Output Current  
3
2
40 mA  
1 mA  
0
-40 -20  
0
20 40  
60  
80 100  
TIME (2 msec/div)  
OPERATING TEMPERATURE (°C)  
FIGURE 2-15:  
Supply Current vs.  
FIGURE 2-18:  
Load Transient Response  
Operating Temperature (TC55RP5002).  
(TC55RP5002).  
DS21435F-page 8  
© 2005 Microchip Technology Inc.  
TC55  
3.0  
PIN DESCRIPTIONS  
4.0  
DETAILED DESCRIPTION  
The descriptions of the pins are listed in Table 3-1.  
The TC55 is a low quiescent current, precision, fixed-  
output voltage LDO. Unlike bipolar regulators, the  
TC55 supply current does not increase proportionally  
with load current.  
TABLE 3-1:  
PIN FUNCTION TABLE  
Description  
Ground Terminal  
Pin No. Symbol  
4.1  
Output Capacitor  
1
GND  
VOUT  
VIN  
2
3
Regulated Voltage Output  
Unregulated Supply Input  
A minimum of 1 µF output capacitor is required. The  
output capacitor should have an effective series resis-  
tance (esr) greater than 0.1Ω and less than 5Ω, plus a  
resonant frequency above 1 MHz. Larger output  
capacitors can be used to improve supply noise rejec-  
tion and transient response. Care should be taken  
when increasing COUT to ensure that the input imped-  
ance is not high enough to cause high input impedance  
oscillation.  
3.1  
Ground Terminal (GND)  
Regulator ground. Tie GND to the negative side of the  
output and the negative side of the input capacitor.  
Only the LDO bias current (1 µA typical) flows out of  
this pin, there is no high current. The LDO output regu-  
lation is referenced to this pin. Minimize voltage drops  
between this pin and the minus side of the load.  
4.2  
Input Capacitor  
A 1 µF input capacitor is recommended for most  
applications when the input impedance is on the order  
of 10Ω. Larger input capacitance may be required for  
stability when operating off of a battery input, or if there  
is a large distance from the input source to the LDO.  
When large values of output capacitance are used, the  
input capacitance should be increased to prevent high  
source impedance oscillations.  
3.2  
Regulated Voltage Output (V  
)
OUT  
Connect VOUT to the positive side of the load and the  
positive terminal of the output capacitor. The positive  
side of the output capacitor should be physically  
located as close to the LDO VOUT pin as is practical.  
The current flowing out of this pin is equal to the DC  
load current.  
3.3  
Unregulated Supply Input (V )  
IN  
Connect the input supply voltage and the positive side  
of the input capacitor to VIN. The input capacitor should  
be physically located as close as is practical to VIN. The  
current flow into this pin is equal to the DC load current,  
plus the LDO bias current (1 µA typical.)  
© 2005 Microchip Technology Inc.  
DS21435F-page 9  
TC55  
EQUATION  
PD = (VINMAX – VOUTMIN) x IOUTMAX  
5.0  
5.1  
THERMAL CONSIDERATIONS  
Power Dissipation  
Given:  
VIN  
The amount of power dissipated internal to the low  
dropout linear regulator is the sum of the power dissi-  
pation within the linear pass device (P-Channel MOS-  
FET) and the quiescent current required to bias the  
internal reference and error amplifier. The internal lin-  
ear pass device power dissipation is calculated by mul-  
tiplying the voltage across the linear device by the  
current through the device.  
= 3.3V to 4.1V  
VOUT = 3.0 V ± 2%  
IOUT = 1 mA to 100 mA  
TAMAX = 55°C  
PMAX = (4.1V – (3.0V x 0.98)) x 100 mA  
PMAX = 116.0 milliwatts  
EQUATION  
To determine the junction temperature of the device, the  
thermal resistance from junction-to-ambient must be  
known. The 3-pin SOT-23 thermal resistance from junc-  
tion-to-air (RθJA) is estimated to be approximately  
359°C/W. The SOT-89 RθJA is estimated to be approxi-  
mately 110°C/W when mounted on 1 square inch of  
copper. The TO-92 RθJA is estimated to be 131.9°C/W.  
The RθJA will vary with physical layout, airflow and other  
application-specific conditions.  
PD (Pass Device) = (VIN – VOUT) x IOUT  
The internal power dissipation, as a result of the bias  
current for the LDO internal reference and error  
amplifier, is calculated by multiplying the ground or  
quiescent current by the input voltage.  
EQUATION  
The device junction temperature is determined by  
calculating the junction temperature rise above  
ambient, then adding the rise to the ambient  
temperature.  
PD (Bias) = VIN x IGND  
The total internal power dissipation is the sum of PD  
(Pass Device) and PD (Bias).  
EQUATION  
EQUATION  
Junction Temperature  
PTOTAL = PD (Pass Device) + PD (Bias)  
SOT-23 Example:  
TJ = PDMAX x RθJA + TA  
TJ = 116.0 milliwatts x 359°C/W + 55°C  
For the TC55, the internal quiescent bias current is so  
low (1 µA typical) that the PD (Bias) term of the power  
dissipation equation can be ignored. The maximum  
power dissipation can be estimated by using the  
maximum input voltage and the minimum output  
voltage to obtain a maximum voltage differential  
between input and output. The next step would be to  
multiply the maximum voltage differential by the  
maximum output current.  
TJ = 96.6°C  
SOT-89 Example:  
TJ = 116.0 milliwatts x 110°C/W + 55°C  
TJ = 67.8°C  
TO-92 Example:  
TJ = 116.0 milliwatts x 131.9°C/W + 55°C  
TJ = 70.3°C  
DS21435F-page 10  
© 2005 Microchip Technology Inc.  
TC55  
6.0  
6.1  
PACKAGING INFORMATION  
Package Marking Information  
3-Pin TO-92  
3-Pin SOT-23A  
3-Pin SOT-89  
2
1
4
3
1 2 3 4  
5 6 7 8  
9 10 1112  
1
2
3
4
1
represents first voltage digit  
2V, 3V, 4V, 5V, 6V  
4
3 &  
1 , 2 ,  
= 55RP (fixed)  
3
5
Ex: 3.xV =  
represents first voltage digit (2-6)  
2 represents first decimal place voltage (x.0 - x.9)  
6 represents first voltage decimal (0-9)  
3
E
Ex: 3.4V =  
7 represents extra feature code: fixed: 0  
Symbol  
Voltage  
Symbol  
Voltage  
A
B
C
D
E
x.0  
x.1  
x.2  
x.3  
x.4  
F
H
K
L
x.5  
x.6  
x.7  
x.8  
x.9  
8 represents regulation accuracy  
1 = ±1.0% (custom), 2 = ±2.0% (standard)  
9 , 10, 11 & 12  
represents assembly lot number  
M
3
4
represents polarity  
0 = Positive (fixed)  
represents assembly lot number  
© 2005 Microchip Technology Inc.  
DS21435F-page 11  
TC55  
3-Lead Plastic Small Outline Transistor (CB) (SOT23)  
E
E1  
2
B
p1  
D
n
p
1
α
c
A
A2  
A1  
φ
β
L
Units  
INCHES*  
NOM  
MILLIMETERS  
Dimension Limits  
MIN  
MAX  
MIN  
NOM  
3
MAX  
n
p
Number of Pins  
3
Pitch  
.038  
.076  
.040  
.037  
.002  
.093  
.051  
.115  
.018  
5
0.96  
1.92  
p1  
Outside lead pitch (basic)  
Overall Height  
A
A2  
A1  
E
.035  
.044  
0.89  
0.88  
1.01  
0.95  
0.06  
2.37  
1.30  
2.92  
0.45  
5
1.12  
1.02  
0.10  
2.64  
1.40  
3.04  
0.55  
10  
Molded Package Thickness  
.035  
.000  
.083  
.047  
.110  
.014  
0
.040  
.004  
.104  
.055  
.120  
.022  
10  
Standoff  
§
0.01  
2.10  
1.20  
2.80  
0.35  
0
Overall Width  
Molded Package Width  
Overall Length  
E1  
D
Foot Length  
L
φ
Foot Angle  
c
Lead Thickness  
Lead Width  
.004  
.015  
0
.006  
.017  
5
.007  
.020  
10  
0.09  
0.37  
0
0.14  
0.44  
5
0.18  
0.51  
10  
B
α
β
Mold Draft Angle Top  
Mold Draft Angle Bottom  
0
5
10  
0
5
10  
* Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: TO-236  
Drawing No. C04-104  
DS21435F-page 12  
© 2005 Microchip Technology Inc.  
TC55  
3-Lead Plastic Small Outline Transistor (MB) (SOT89)  
H
E
B1  
3
B
D1  
D
p1  
2
1
p
B1  
L
E1  
A
C
Units  
INCHES  
MILLIMETERS*  
MIN MAX  
1.50 BSC  
Dimension Limits  
p
MIN  
MAX  
Pitch  
.059 BSC  
.118 BSC  
.055  
p1  
A
Outside lead pitch (basic)  
Overall Height  
3.00 BSC  
1.40  
.063  
.167  
.102  
.090  
.181  
.072  
.047  
.017  
.022  
.019  
1.60  
4.25  
2.60  
2.29  
4.60  
1.83  
1.20  
0.44  
0.56  
0.48  
Overall Width  
H
.155  
3.94  
Molded Package Width at Base  
Molded Package Width at Top  
Overall Length  
E
E1  
D
.090  
2.29  
.084  
2.13  
.173  
4.40  
Tab Length  
D1  
L
.064  
1.62  
Foot Length  
.035  
0.89  
c
Lead Thickness  
.014  
0.35  
Lead 2 Width  
B
.017  
0.44  
Leads 1 & 3 Width  
B1  
.014  
0.36  
*Controlling Parameter  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not  
exceed .005" (0.127mm) per side.  
JEDEC Equivalent: TO-243  
Drawing No. C04-29  
© 2005 Microchip Technology Inc.  
DS21435F-page 13  
TC55  
3-Lead Plastic Transistor Outline (ZB) (TO-92)  
E1  
D
n
1
L
1
2
3
α
B
p
c
A
R
β
Units  
INCHES*  
NOM  
MILLIMETERS  
Dimension Limits  
MIN  
MAX  
MIN  
NOM  
3
MAX  
n
p
Number of Pins  
3
Pitch  
.050  
.143  
.186  
.183  
.090  
.555  
.017  
.019  
5
1.27  
Bottom to Package Flat  
Overall Width  
A
E1  
D
R
L
.130  
.155  
3.30  
4.45  
3.62  
4.71  
4.64  
2.29  
14.10  
0.43  
0.48  
5
3.94  
.175  
.170  
.085  
.500  
.014  
.016  
4
.195  
.195  
.095  
.610  
.020  
.022  
6
4.95  
4.95  
2.41  
15.49  
0.51  
0.56  
6
Overall Length  
4.32  
2.16  
12.70  
0.36  
0.41  
4
Molded Package Radius  
Tip to Seating Plane  
Lead Thickness  
Lead Width  
c
B
α
Mold Draft Angle Top  
Mold Draft Angle Bottom  
β
2
3
4
2
3
4
*Controlling Parameter  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: TO-92  
Drawing No. C04-101  
DS21435F-page 14  
© 2005 Microchip Technology Inc.  
TC55  
PRODUCT IDENTIFICATION SYSTEM  
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.  
Examples:  
PART NO.  
Device  
XX  
X
X
X
XX  
XX  
a)  
b)  
c)  
d)  
e)  
f)  
TC55RP1802ECB713: 1.8V LDO Positive  
Voltage Regulator, 2% Tolerance  
SOT23-A-3 package.  
Output Feature Tolerance Temp. Package Taping  
Voltage Direction  
Code  
TC55RP2502EMB713: 1.8V LDO Positive  
Voltage Regulator, 2% Tolerance.  
SOT89-3 package.  
Device:  
TC55: 1 µA Low Dropout Positive Voltage Regulator  
TC55RP2502ECB713: 2.5V LDO Positive  
Voltage Regulator, 2% Tolerance.  
SOT23-A-3 package.  
Output Voltage:  
12  
18  
25  
30  
33  
50  
=
=
=
=
=
=
1.2V "Standard"  
1.8V "Standard"  
2.5V "Standard"  
3.0V "Standard"  
3.3V "Standard"  
5.0V "Standard"  
TC55RP3002ECB713: 3.0V LDO Positive  
Voltage Regulator, 2% Tolerance.  
SOT23-A-3 package.  
TC55RP3002EMB713: 3.0V LDO Positive  
Voltage Regulator, 2% Tolerance.  
SOT89-3 package.  
Extra Feature Code:  
Tolerance:  
0
=
Fixed  
TC55RP3302ECB713: 3.3V LDO Positive  
Voltage Regulator, 2% Tolerance.  
SOT23-A-3 package.  
1
2
=
=
1.0% (Custom)  
2.0% (Standard)  
g)  
h)  
i)  
TC55RP3302EMB713: 3.3V LDO Positive  
Voltage Regulator, 2% Tolerance.  
SOT89-3 package.  
Temperature:  
E
=
-40°C to +85°C  
Package Type:  
CB  
MB  
ZB  
=
=
=
3-Pin SOT-23A (equivalent to EIAJ SC-59)  
3-Pin SOT-89  
3-Pin TO-92  
TC55RP5002ECB713: 5.0V LDO Positive  
Voltage Regulator, 2% Tolerance.  
SOT23-A-3 package.  
TC55RP5002EMB713: 5.0V LDO Positive  
Voltage Regulator, 2% Tolerance.  
SOT89-3 package.  
Taping Direction:  
TR  
=
Standard  
713 = Standard  
Sales and Support  
Data Sheets  
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and  
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:  
1. Your local Microchip sales office  
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277  
3. The Microchip Worldwide Site (www.microchip.com)  
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.  
Customer Notification System  
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  
© 2005 Microchip Technology Inc.  
DS21435F-page 15  
TC55  
NOTES:  
DS21435F-page 16  
© 2005 Microchip Technology Inc.  
Note the following details of the code protection feature on Microchip devices:  
Microchip products meet the specification contained in their particular Microchip Data Sheet.  
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the  
intended manner and under normal conditions.  
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our  
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data  
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  
Microchip is willing to work with the customer who is concerned about the integrity of their code.  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not  
mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our  
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts  
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.  
Information contained in this publication regarding device  
applications and the like is provided only for your convenience  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
MICROCHIP MAKES NO REPRESENTATIONS OR WAR-  
RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,  
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,  
RELATED TO THE INFORMATION, INCLUDING BUT NOT  
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,  
MERCHANTABILITY OR FITNESS FOR PURPOSE.  
Microchip disclaims all liability arising from this information and  
its use. Use of Microchip’s products as critical components in  
life support systems is not authorized except with express  
written approval by Microchip. No licenses are conveyed,  
implicitly or otherwise, under any Microchip intellectual property  
rights.  
Trademarks  
The Microchip name and logo, the Microchip logo, Accuron,  
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,  
PRO MATE, PowerSmart, rfPIC, and SmartShunt are  
registered trademarks of Microchip Technology Incorporated  
in the U.S.A. and other countries.  
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,  
PICMASTER, SEEVAL, SmartSensor and The Embedded  
Control Solutions Company are registered trademarks of  
Microchip Technology Incorporated in the U.S.A.  
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,  
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,  
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial  
Programming, ICSP, ICEPIC, Linear Active Thermistor,  
MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM,  
PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,  
PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode,  
Smart Serial, SmartTel, Total Endurance and WiperLock are  
trademarks of Microchip Technology Incorporated in the  
U.S.A. and other countries.  
SQTP is a service mark of Microchip Technology Incorporated  
in the U.S.A.  
All other trademarks mentioned herein are property of their  
respective companies.  
© 2005, Microchip Technology Incorporated, Printed in the  
U.S.A., All Rights Reserved.  
Printed on recycled paper.  
Microchip received ISO/TS-16949:2002 quality system certification for  
its worldwide headquarters, design and wafer fabrication facilities in  
Chandler and Tempe, Arizona and Mountain View, California in  
October 2003. The Company’s quality system processes and  
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals, nonvolatile memory and  
analog products. In addition, Microchip’s quality system for the design  
and manufacture of development systems is ISO 9001:2000 certified.  
© 2005 Microchip Technology Inc.  
DS21435F-page 17  
WORLDWIDE SALES AND SERVICE  
AMERICAS  
ASIA/PACIFIC  
ASIA/PACIFIC  
EUROPE  
Corporate Office  
Australia - Sydney  
Tel: 61-2-9868-6733  
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10/31/05  
DS21435F-page 18  
© 2005 Microchip Technology Inc.  

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