TP2540N3-G [MICROCHIP]

86mA, 400V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92;


型号：	TP2540N3-G
厂家：	MICROCHIP
描述：	86mA, 400V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 开关晶体管
文件：	总6页 (文件大小：678K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TP2540

Supertex inc.

P-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold (-2.4V max.)

► High input impedance

► Low input capacitance (60pF typical)

► Fast switching speeds

► Low on-resistance

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► Free from secondary breakdown

► Low input and output leakage

Applications

► Logic level interfaces - ideal for TTL and CMOS

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Ordering Information

Product Summary

R_DS(ON)

I_D(ON)

Part Number

Package Option

Packing

V_GS(th)

(max)

BV_DSS/BV_DGS

(max)

(min)

TP2540N3-G

3-Lead TO-92

1000/Bag

-400V

25Ω

-2.4A

-0.4V

TP2540N3-G P002

TP2540N3-G P003

Pin Conﬁguration

TP2540N3-G P005 3-Lead TO-92

TP2540N3-G P013

2000/Reel

DRAIN

TP2540N3-G P014

TP2540N8-G

TO-243AA (SOT-89)

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

SOURCE

DRAIN

GATE

Absolute Maximum Ratings

Parameter

TO-92

TO-243AA (SOT-89)

Value

BV_DSS

BV_DGS

±20V

Drain-to-source voltage

Drain-to-gate voltage

Product Marking

SiTP

2 5 4 0

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Gate-to-source voltage

Operating and storage temperature

-55^OC to +150^OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Package may or may not include the following marks: Si or

TO-92

Typical Thermal Resistance

W = Code for week sealed

TP5DW

Package

θ_ja

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-92

132^OC/W

133^OC/W

TO-243AA (SOT-89)

Doc.# DSFP-TP2540

B081613

Supertex inc.

www.supertex.com

TP2540

Thermal Characteristics

I_D

Package

I_D

Power Dissipation

†

I_DR

I_DRM

(continuous)^†

(pulsed)

@T_A= 25^OC

TO-92

-86mA

-600mA

-1.2A

0.74W

1.6^‡

-86mA

-600mA

-1.2A

TO-243AA (SOT-89)

-125mA

†

‡

I_D(continuous) is limited by max rated T_j.

Mounted on FR5 board, 25mm x 25mm x 1.57mm.

Electrical Characteristics (T_A= 25°C unless otherwise speciﬁed)

Sym

BV_DSS

V_GS(th)

∆V_GS(th)

I_GSS

Parameter

Min

-400

-1.0

Typ

Max

Units

Conditions

Drain-to-source breakdown voltage

Gate threshold voltage

Change in V_GS(th)with temperature

Gate body leakage

V_GS= 0V, I_D= -2.0mA

V_GS= V_DS, I_D= -1.0mA

-2.4

4.8

-100

-10

mV/^OC V_GS= V_DS, I_D= -1.0mA

V_GS= ± 20V, V_DS= 0V

μA

V_GS= 0V, V_DS= Max Rating

I_DSS

Zero gate voltage drain current

V_DS= 0.8 Max Rating,

V_GS= 0V, T_A= 125°C

-1.0

-0.2

-0.4

-0.3

-1.1

V_GS= -4.5V, V_DS= -25V

V_GS= -10V, V_DS= -25V

V_GS= -4.5V, I_D= -100mA

I_D(ON)

On-state drain current

0.75

R_DS(ON)

Static drain-to-source on-state resistance

_GS= -10V, I_D= -100mA

∆R_DS(ON)Change in R_DS(ON)with temperature

%/^OC

V_GS= -10V, I_D= -100mA

V_DS= -25V, I_D= -100mA

G_FS

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Forward transconductance

Input capacitance

100

175

mmho

125

-1.8

V_GS= 0V,

V_DS= -25V,

f = 1.0 MHz

Common source output capacitance

Reverse transfer capacitance

Turn-on delay time

V_DD= -25V,

I_D= -0.4A,

R_GEN= 25Ω

Rise time

t_d(OFF)

t_f

Turn-off delay time

Fall time

V_SD

Diode forward voltage drop

Reverse recovery time

V_GS= 0V, I_SD= -100mA

t_rr

300

Notes:

1. All D.C. parameters 100% tested at 25^OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

Pulse

10%

Generator

INPUT

R_GEN

90%

t_(OFF)

-10V

t_(ON)

t_d(ON)

D.U.T.

t_r

t_d(OFF)

t_f

INPUT

OUTPUT

R_L

VDD

90%

OUTPUT

VDD

10%

Doc.# DSFP-TP2540

B081613

Supertex inc.

www.supertex.com

TP2540

Typical Performance Curves

BV_DSSVariation with Temperature

On-Resistance vs. Drain Current

1.1

100

V_GS= -4.5V

_GS= -10V

1.0

0.9

-50

100

150

-0.4

-0.8

-1.2

-1.6

-2.0

T_j(^OC)

I_D(amperes)

V_(th)and R_DSVariation with Temperature

Transfer Characteristics

V_DS= -25^OC

2.5

-2.0

1.2

2.0

-1.6

-1.2

-0.8

-0.4

R_DS(ON)@ -10V, -0.1A

1.1

T_A= -55^OC

1.5

1.0

25^OC

1.0

0.9

V_(th)@ -1mA

0.5

125^OC

0.8

150

-2.0

-4.0

-6.0

-8.0

-10

-50

100

V_GS(volts)

T_j(^OC)

Capacitance vs. Drain-to-Source Voltage

Gate Drive Dynamic Characteristics

-10

200

f = 1MHz

-8.0

-6.0

-4.0

-2.0

V_DS= -10V

150

V_DS= -40V

100

190 pF

C_ISS

60pF

0.4

C_OSS

C_RSS

0.8

1.2

1.6

2.0

-10

-20

-30

-40

Q_G(nanocoulombs)

V_DS(volts)

Doc.# DSFP-TP2540

B081613

Supertex inc.

www.supertex.com

TP2540

Typical Performance Curves (cont.)

Output Characteristics

Saturation Characteristics

-2.0

-1.0

-0.8

-0.6

-0.4

-0.2

-1.6

V_GS= -10V

-8V

-6V

-1.2

-8V

-0.8

-6V

-0.4

-4V

-10

-20

-30

-40

-50

-2.0

-4.0

-6.0

-8.0

-10

V_DS(volts)

Transconductance vs. Drain Current

Power Dissipation vs. Ambient Temperature

0.5

2.0

V_DS= -25V

TO-243AA

0.4

0.3

0.2

0.1

1.0

T_A= -55^OC

25^OC

TO-92

125^OC

-0.4

-0.8

-1.2

-1.6

-2.0

100

125

150

I_D(amperes)

T_A(^OC)

Maximum Rated Safe Operating Area

Thermal Response Characteristics

-10

1.0

0.8

0.6

0.4

0.2

T_A= 25^OC

TO-243AA

T = 25^OC

P^A_D= 1.6W

TO-243AA (pulsed)

-1.0

-0.1

TO-92 (pulsed)

TO-243AA (DC)

TO-92 (DC)

TO-92

T = 25^OC

P^C_D= 1.0W

-0.01

-1.0

-10

-100

-1000

0.001

0.01

0.1

1.0

V_DS(volts)

t_p(seconds)

Doc.# DSFP-TP2540

B081613

Supertex inc.

www.supertex.com

TP2540

3-Lead TO-92 Package Outline (N3)

Seating

Plane

Side View

Front View

Bottom View

Symbol

.170

.014^†

.175

.125

.080

.045

.500

MIN

NOM

MAX

.014^†

.095

Dimensions

(inches)

.210

.022^†

.205

.165

.105

.055

.610*

JEDEC Registration TO-92.

* This dimension is not speciﬁed in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

Doc.# DSFP-TP2540

B081613

Supertex inc.

www.supertex.com

TP2540

3-Lead TO-243AA (SOT-89) Package Outline (N8)

Top View

Side View

Symbol

1.40

0.44

0.36

0.35

1.62

2.29

2.00^†

0.73^†

MIN

NOM

MAX

4.40

3.94

Dimensions

(mm)

1.50

BSC

3.00

BSC

1.60

0.56

0.48

0.44

4.60

1.83

2.60

2.29

4.25

1.20

JEDEC Registration TO-243, Variation AA, Issue C, July 1986.

† This dimension differs from the JEDEC drawing

Drawings not to scale.

Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.

(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

Doc.# DSFP-TP2540

B081613

TP2540N3-G [MICROCHIP]

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