VN0550N3P003 [MICROCHIP]
Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92;
| 型号： | VN0550N3P003 |
| 厂家： | 
MICROCHIP |
| 描述： | Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 |
| 文件： | 总5页 (文件大小：534K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VN0550
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
General Description
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral SOURCE-DRAIN diode
► High input impedance and high gain
► Complementary N- and P-Channel devices
The Supertex VN0550 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Applications
► Motor controls
► Converters
► Amplifiers
► Switches
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
RDS(ON)
(max)
(Ω)
ID(ON)
BVDSS/BVDGS
Device
Package
(min)
(mA)
(V)
VN0550N3
TO-92
500
60
150
VN0550N3-G
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Pin Configuration
Value
BVDSS
BVDGS
20V
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Operating and storage temperature
Soldering temperature1
-55°C to +150°C
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
S G D
TO-92
(front view)
Notes:
1. Distance of 1.6mm from case for 10 seconds.
VN0550
Electrical Characteristics (TA = 25°C unless otherwise specified)
Symbol Parameter
Min
Typ
Max
-
4.0
-5.0
100
10
Units Conditions
BVDSS
VGS(th)
Drain-to-source breakdown voltage
Gate threshold voltage
500
2.0
-
-
V
V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
ΔVGS(th) Change in VGS(th) with temperature
-
-
-
-3.8
mV/OC VGS = VDS, ID = 1.0mA
IGSS
Gate body leakage current
-
-
nA
µA
VGS = 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
IDSS
Zero gate voltage drain current
V
GS = 0V, VDS = 0.8 Max Rating,
-
-
1.0
mA
TA = 125OC
-
100
350
45
-
-
VGS = 5.0V, VDS = 25V
ID(ON)
ON-state drain current
mA
150
VGS = 10V, VDS = 25V
VGS = 5.0V, ID = 50mA
VGS = 10V, ID = 50mA
-
-
-
-
Static drain-to-source
ON-state resistance
RDS(ON)
Ω
40
60
1.7
ΔRDS(ON) Change in RDS(ON) with temperature
1.0
%/OC VGS = 10V, ID = 50mA
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transconductance
Input capacitance
50
-
100
45
8.0
2.0
-
-
mmho VDS = 25V, ID = 50mA
55
10
5.0
10
15
10
10
-
Common source output capacitance
Reverse transfer capacitance
Turn-ON time
-
pF
ns
VGS = 0V, VDS = 25V, f = 1.0MHz
-
-
VDD = 25V,
ID = 150mA,
RGEN = 25Ω
Rise time
-
-
td(OFF)
tf
Turn-OFF time
-
-
Fall time
-
VSD
Diode forward voltage drop
Reverse recovery time
-
0.8
V
VGS = 0V, ISD = 500mA
VGS = 0V, ISD = 500mA
trr
-
300
-
ns
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Thermal Characteristics
ID
ID
Power Dissipation
*
θJC
IDR
IDRM
θJA
O
(continuous)* (pulsed)
@T = 25 C
Device
Package
(OC/W)
(OC/W)
(mA)
(mA)
(mA)
(mA)
C(W)
VN0550
TO-92
50
250
1.0
125
170
50
250
Notes:
* ID (continuous) is limited by max rated TJ.
VDD
RL
Switching Waveforms and Test Circuit
10V
90%
INPUT
PULSE
GENERATOR
10%
0V
OUTPUT
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tr
tF
VDD
0V
D.U.T.
10%
10%
INPUT
OUTPUT
90%
90%
2
VN0550
Typical Performance Curves
Output Characteristics
Saturation Characteristics
VGS = 10V
0.5
0.25
0.20
0.15
0.10
0.05
0
V
= 10V
GS
8V
6V
0.4
0.3
0.2
0.1
0
8V
6V
4V
4V
0
2
4
6
8
10
0
10
20
30
40
50
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
0.40
0.32
0.24
0.16
0.08
0
10
8
V
= 25V
DS
T
= -55°C
= 25°C
A
6
T
A
4
T
= 125°C
A
2
TO-92
0
0
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
150
ID (amperes)
TC (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
1.0
0.1
1.0
0.8
0.6
0.4
0.2
TO-92 (DC)
0.01
0.001
TO-92
PD = 1W
TC = 25°C
T
= 25°C
C
0
1
10
100
1000
0.001
0.01
0.1
1
10
VDS (volts)
tp (seconds)
3
VN0550
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
100
80
60
40
20
0
1.1
1.0
0.9
V
= 5V
GS
V
= 10V
GS
-50
0
50
100
150
0
0.1
0.2
0.3
0.4
0.5
ID (amperes)
Tj (°C)
Transfer Characteristics
V(th) and RDS Variation with Temperature
0.5
0.4
0.3
0.2
0.1
0
1.4
1.2
1.0
0.8
0.6
1.8
1.4
1.0
0.6
0.2
V
= 25V
DS
R
@ 10V, 50mA
DS(ON)
= -55
°C
T
25°C
A
V
@ 1mA
(th)
150°C
0
2
4
6
8
10
-50
0
50
100
150
VGS (volts)
Tj(°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
100
75
50
25
0
10
8
V
= 10V
DS
f = 1MHz
105 pF
6
C
ISS
V
= 40V
DS
4
112 pF
2
0
C
C
OSS
50 pF
RSS
0.6
0
10
20
30
40
0
0.2
0.4
0.8
1.0
QG (nanocoulombs)
VDS (volts)
4
VN0550
TO-92 Package Outline
0.135 MIN
0.125 - 0.165
0.080 - 0.105
1
3
2
Bottom View
0.175 - 0.205
0.170 - 0.210
1 2 3
Seating Plane
0.500 MIN
0.014 - 0.022
0.014 - 0.022
0.045 - 0.055
0.095 - 0.105
Front View
Side View
Notes:
All dimensions are in millimeters; all angles in degrees.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-VN0550
A042607
5
相关型号：
VN0550N3P006
Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0550N3P008
Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0550N3P011
Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0550N3P012
Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0550N3P013
Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0550N3P013-G
Small Signal Field-Effect Transistor, 0.078A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3
SUPERTEX
VN0550N3P014
Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0550N3P016
Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0550N3P017
Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0550N3P018
Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
©2020 ICPDF网 联系我们和版权申明