M58BW016DT [MICRON]
16 Mbit (512 Kbit x 32, boot block, burst); 16兆位（ 512千位×32 ，引导块，爆）
| 型号： | M58BW016DT |
| 厂家： | 
MICRON TECHNOLOGY |
| 描述： | 16 Mbit (512 Kbit x 32, boot block, burst) |
| 文件： | 总70页 (文件大小：1283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M58BW016DB M58BW016DT
M58BW016FT M58BW016FB
16 Mbit (512 Kbit x 32, boot block, burst)
3 V supply Flash memories
Features
Supply voltage
– VDD = 2.7 V to 3.6 V for program, erase
and read
– VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O
buffers
– VPP = 12 V for fast program (optional)
High performance
– Access times: 70, 80 ns
– 56 MHz effective zero wait-state burst read
– Synchronous burst read
– Asynchronous page read
PQFP80 (T)
Hardware block protection
LBGA
– WP pin for write protect of the 2 outermost
parameter blocks and all main blocks
– RP pin for write protect of all blocks
Optimized for FDI drivers
LBGA80 10 × 12 mm
– Fast program / erase suspend latency
time < 6 µs
– Common Flash interface
Memory blocks
RoHS packages available
– 8 parameters blocks (top or bottom)
– 31 main blocks
Low power consumption
– 5 µA typical deep power-down
– 60 µA typical standby for M58BW016DT/B
150 µA typical standby for M58BW016FT/B
– Automatic standby after asynchronous
read
Electronic signature
– Manufacturer code: 20h
– Top device code: 8836h
– Bottom device code: 8835h
100 K write/erase cycling + 20 years data
retention (minimum)
High reliability level with over 1 M write/erase
cycling sustained
July 2011
Rev 18
1/70
www.numonyx.com
1
Contents
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Contents
1
2
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.1 Block protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
Address inputs (A0-A18) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Data inputs/outputs (DQ0-DQ31) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output Disable (GD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Reset/Power-down (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Latch Enable (L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Burst Clock (K) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.10 Burst Address Advance (B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.11 Valid Data Ready (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.12 Write Protect (WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.13 Supply voltage (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.14 Output supply voltage (VDDQ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.15 Input supply voltage (VDDQIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.16 Program/erase supply voltage (VPP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.17 Ground (VSS and VSSQ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.18 Don’t use (DU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.19 Not connected (NC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1
Asynchronous bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1.1
3.1.2
3.1.3
3.1.4
3.1.5
3.1.6
Asynchronous bus read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Asynchronous latch controlled bus read . . . . . . . . . . . . . . . . . . . . . . . . 18
Asynchronous page read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Asynchronous bus write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Asynchronous latch controlled bus write . . . . . . . . . . . . . . . . . . . . . . . . 19
Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Contents
3.1.7
3.1.8
3.1.9
3.1.10
Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Automatic low power mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Power-down mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.2
3.3
Synchronous bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.2.1
3.2.2
Synchronous burst read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Synchronous burst read suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Burst configuration register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.3.1
3.3.2
3.3.3
3.3.4
3.3.5
3.3.6
3.3.7
3.3.8
Read select bit (M15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
X-Latency bits (M14-M11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Y-Latency bit (M9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Valid data ready bit (M8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Burst type bit (M7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Valid clock edge bit (M6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Wrap burst bit (M3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Burst length bit (M2-M0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
4
Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
Read Memory Array command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Read Electronic Signature command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Read Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Read Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Clear Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Program/Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Program/Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
4.10 Set Burst Configuration Register command . . . . . . . . . . . . . . . . . . . . . . . 32
5
Status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
5.1
5.2
5.3
5.4
5.5
Program/erase controller status (bit 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Erase suspend status (bit 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Erase status (bit 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Program status (bit 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
VPP status (bit 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
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Contents
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
5.6
5.7
Program suspend status (bit 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Block protection status (bit 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
6
7
8
9
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Appendix A Common Flash interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Appendix B Flowcharts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
List of tables
List of tables
Table 1.
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
M58BW016DT and M58BW016FT top boot block addresses . . . . . . . . . . . . . . . . . . . . . . 12
M58BW016DB and M58BW016FB bottom boot block addresses . . . . . . . . . . . . . . . . . . . 13
Asynchronous bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Asynchronous read electronic signature operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Synchronous burst read bus operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Burst configuration register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Burst type definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Program, erase times and program, erase endurance cycles . . . . . . . . . . . . . . . . . . . . . . 33
Status register bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Operating and AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Asynchronous bus read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Asynchronous latch controlled bus read AC characteristics. . . . . . . . . . . . . . . . . . . . . . . . 42
Asynchronous page read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Asynchronous write and latch controlled write AC characteristics . . . . . . . . . . . . . . . . . . . 46
Synchronous burst read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Power supply AC and DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Reset, power-down and power-up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
PQFP80 - 80 lead plastic quad flat pack, package mechanical data . . . . . . . . . . . . . . . . . 53
LBGA80 10 × 12 mm - 8 × 10 active ball array, 1 mm pitch, package mechanical data . . 54
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
CFI - query address and data output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
CFI - device voltage and timing specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Device geometry definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Extended query information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
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List of figures
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
PQFP connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
LBGA connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Example burst configuration X-1-1-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Example burst configuration X-2-2-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
AC measurement input/output waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Asynchronous bus read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Asynchronous latch controlled bus read AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 10. Asynchronous page read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 11. Asynchronous write AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 12. Asynchronous latch controlled write AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 13. Synchronous burst read (data valid from ‘n’ clock rising edge) . . . . . . . . . . . . . . . . . . . . . 47
Figure 14. Synchronous burst read (data valid from ‘n’ clock rising edge) . . . . . . . . . . . . . . . . . . . . . 48
Figure 15. Synchronous burst read - continuous - valid data ready output . . . . . . . . . . . . . . . . . . . . . 49
Figure 16. Synchronous burst read - burst address advance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 17. Reset, power-down and power-up AC waveforms - control pins low . . . . . . . . . . . . . . . . . 50
Figure 18. Reset, power-down and power-up AC waveforms - control pins toggling . . . . . . . . . . . . . 50
Figure 19. Power supply slope specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 20. PQFP80 - 80 lead plastic quad flat pack, package outline . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 21. LBGA80 10 × 12 mm - 8 × 10 active ball array, 1 mm pitch, package outline . . . . . . . . . . 54
Figure 22. Program flowchart and pseudocode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 23. Program suspend & resume flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 24. Block erase flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 25. Erase suspend & resume flowchart and pseudocode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Figure 26. Power-up sequence followed by synchronous burst read . . . . . . . . . . . . . . . . . . . . . . . . . 63
Figure 27. Command interface and program/erase controller flowchart (a). . . . . . . . . . . . . . . . . . . . . 64
Figure 28. Command interface and program/erase controller flowchart (b). . . . . . . . . . . . . . . . . . . . . 65
Figure 29. Command interface and program/erase controller flowchart (c). . . . . . . . . . . . . . . . . . . . . 66
Figure 30. Command interface and program/erase controller flowchart (d). . . . . . . . . . . . . . . . . . . . . 67
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Description
1
Description
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit non-
volatile Flash memories that can be erased electrically at the block level and programmed
in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a
V
DDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply
can be used to provide fast program and erase for a limited time and number of
program/erase cycles.
The devices support asynchronous (latch controlled and page read) and synchronous bus
operations. The synchronous burst read interface allows a high data transfer rate controlled
by the burst clock, K, signal. It is capable of bursting fixed or unlimited lengths of data. The
burst type, latency and length can be configured and can be easily adapted to a large
variety of system clock frequencies and microprocessors. All writes are asynchronous. On
power-up the memory defaults to read mode with an asynchronous bus.
The devices have a boot block architecture with an array of 8 parameter blocks of 64 Kbits
each and 31 main blocks of 512 Kbits each. In the M58BW016DT and M58BW016FT the
parameter blocks are located at the top of the address space whereas in the M58BW016DB
and M58BW016FB, they are located at the bottom.
Program and erase commands are written to the command interface of the memory. An on-
chip program/erase controller simplifies the process of programming or erasing the memory
by taking care of all of the special operations that are required to update the memory
contents. The end of a program or erase operation can be detected and any error conditions
identified in the status register. The command set required to control the memory is
consistent with JEDEC standards.
Erase can be suspended in order to perform either read or program in any other block and
then resumed. Program can be suspended to read data in any other block and then
resumed. Each block can be programmed and erased over 100,000 cycles.
All blocks are protected during power-up.
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB feature two different
levels of block protection to avoid unwanted program/erase operations:
The WP pin offers an hardware protection on two of the parameter blocks and all of the
main blocks
All program or erase operations are blocked when Reset, RP, is held Low. A
reset/power-down mode is entered when the RP input is Low. In this mode the power
consumption is lower than in the normal standby mode, the device is write protected
and both the status and the burst configuration registers are cleared. A recovery time is
required when the RP input goes High.
The memory is offered in a PQFP80 (14 x 20 mm) and LBGA80 (10 × 12 mm) package.
The memories are supplied with all the bits erased (set to ’1’).
In the present document, M58BW016DT, M58BW016DB, M58BW016FT and
M58BW016FB will be referred to as M58BW016 unless otherwise specified.
7/70
Description
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 1.
Logic diagram
V
V
V
V
DD DDQ DDQIN PP
DQ0-DQ31
A0-A18
K
L
E
M58BW016DT
M58BW016DB
M58BW016FT
M58BW016FB
RP
G
R
GD
W
WP
B
V
V
SSQ
SS
AI11201b
8/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Description
Table 1.
Signal names
Signal
Description
Direction
A0-A18
Address inputs
Inputs
I/O
DQ0-DQ7
Data input/output, command input
Data input/output, Burst Configuration Register
Data input/output
DQ8-DQ15
I/O
DQ16-DQ31
I/O
B
E
Burst Address Advance
Chip Enable
Input
Input
Input
Input
Input
Output
Input
Input
Input
Input
Supply
Supply
Supply
G
Output Enable
K
Burst Clock
L
Latch Enable
R
Valid Data Ready (open drain output)
Reset/Power-down
RP
W
GD
WP
Write Enable
Output Disable
Write Protect
V
Supply voltage
DD
V
Power supply for output buffers
Power supply for input buffers only
DDQ
V
DDQIN
Optional supply voltage for fast program and fast
erase operations
V
V
Supply
PP
SS
Ground
–
–
–
–
V
Input/output ground
Not connected internally
Don’t use as internally connected
SSQ
NC
DU
9/70
Description
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 2.
PQFP connections (top view through package)
DQ16
DQ17
DQ18
DQ19
1
DQ15
DQ14
DQ13
DQ12
64
V
V
V
DDQ
SSQ
DDQ
V
SSQ
DQ20
DQ11
DQ10
DQ9
DQ8
DQ7
DQ6
DQ5
DQ4
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
M58BW016DT
M58BW016DB
M58BW016FT
M58BW016FB
12
53
V
V
V
DDQ
SSQ
DDQ
V
SSQ
DQ28
DQ3
DQ2
DQ1
DQ0
NC
DQ29
DQ30
DQ31
DU
A0
A18
A17
A16
A1
A2
41
24
AI11202b
10/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Description
Figure 3.
LBGA connections (top view through package)
1
2
3
4
5
6
7
8
A
B
C
D
E
F
G
H
I
A15
A14
V
V
V
A6
A3
A2
DD
PP
SS
A16
A17
DQ3
A13
A18
A12
A11
NC
A9
A10
NC
A8
NC
A5
A7
A4
NC
A1
A0
DQ0
DQ4
DQ7
DQ8
DQ12
DQ14
RP
NC
DQ31
DQ28
DQ25
DQ21
DQ19
G
DQ30
DQ26
DQ24
DQ23
DQ18
R
DQ29
V
DQ2
DQ6
DQ10
DQ11
L
DQ1
DQ5
DQ9
WP
B
DQ27
NC
V
DDQ
DDQ
V
V
SSQ
SSQ
V
DQ22
DQ17
E
V
DDQ
DDQ
DQ13
DQ15
DQ20
DQ16
NC
J
V
K
V
V
W
GD
DDQIN
SS
DD
AI04151C
1.1
Block protection
The M58BW016 feature two different levels of block protection.
Write protect pin, WP - When WP is Low, VIL, all the lockable parameter blocks (two
upper (top) or lower (bottom)) and all the main blocks are protected. When WP is High
(VIH) all the lockable parameter blocks and all the main blocks are unprotected
Reset/power-down pin, RP - If the device is held in reset mode (RP at VIL), no
program or erase operations can be performed on any block.
After a device reset the first two kinds of block protection (WP, RP) can be combined to give
a flexible block protection.
11/70
Description
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
M58BW016DT and M58BW016FT top boot block addresses
Table 2.
#
Size (Kbit)
Address range
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
64
7F800h-7FFFFh
7F000h-7F7FFh
7E800h-7EFFFh
7E000h-7E7FFh
7D800h-7DFFFh
7D000h-7D7FFh
7C800h-7CFFFh
7C000h-7C7FFh
78000h-7BFFFh
74000h-77FFFh
70000h-73FFFh
6C000h-6FFFFh
68000h-6BFFFh
64000h-67FFFh
60000h-63FFFh
5C000h-5FFFFh
58000h-5BFFFh
54000h-57FFFh
50000h-53FFFh
4C000h-4FFFFh
48000h-4BFFFh
44000h-47FFFh
40000h-43FFFh
3C000h-3FFFFh
38000h-3BFFFh
34000h-37FFFh
30000h-33FFFh
2C000h-2FFFFh
28000h-2BFFFh
24000h-27FFFh
20000h-23FFFh
1C000h-1FFFFh
18000h-1BFFFh
14000h-17FFFh
10000h-13FFFh
0C000h-0FFFFh
08000h-0BFFFh
04000h-07FFFh
00000h-03FFFh
64
64
64
64
64
64
64
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
8
7
6
5
4
3
2
1
0
12/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Description
Table 3.
#
M58BW016DB and M58BW016FB bottom boot block addresses
Size (Kbit)
Address range
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
512
64
7C000h-7FFFFh
78000h-7BFFFh
74000h-77FFFh
70000h-73FFFh
6C000h-6FFFFh
68000h-6BFFFh
64000h-67FFFh
60000h-63FFFh
5C000h-5FFFFh
58000h-5BFFFh
54000h-57FFFh
50000h-53FFFh
4C000h-4FFFFh
48000h-4BFFFh
44000h-47FFFh
40000h-43FFFh
3C000h-3FFFFh
38000h-3BFFFh
34000h-37FFFh
30000h-33FFFh
2C000h-2FFFFh
28000h-2BFFFh
24000h-27FFFh
20000h-23FFFh
1C000h-1FFFFh
18000h-1BFFFh
14000h-17FFFh
10000h-13FFFh
0C000h-0FFFFh
08000h-0BFFFh
04000h-07FFFh
03800h-03FFFh
03000h-037FFh
02800h-02FFFh
02000h-027FFh
01800h-01FFFh
01000h-017FFh
00800h-00FFFh
00000h-007FFh
8
7
6
64
5
64
4
64
3
64
2
64
1
64
0
64
13/70
Signal descriptions
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
2
Signal descriptions
See Figure 1: Logic diagram, and Table 1: Signal names for a brief overview of the signals
connected to this device.
2.1
Address inputs (A0-A18)
The address inputs are used to select the cells to access in the memory array during bus
operations either to read or to program data. During bus write operations they control the
commands sent to the command interface of the program/erase controller. Chip Enable
must be Low when selecting the addresses.
The address inputs are latched on the rising edge of Latch Enable L or Burst Clock K,
whichever occurs first, in a read operation.The address inputs are latched on the rising edge
of Chip Enable, Write Enable or Latch Enable, whichever occurs first in a write operation.
The address latch is transparent when Latch Enable is Low, VIL. The address is internally
latched in an erase or program operation.
2.2
Data inputs/outputs (DQ0-DQ31)
The data inputs/outputs output the data stored at the selected address during a bus read
operation, or are used to input the data during a program operation. During bus write
operations they represent the commands sent to the command interface of the
program/erase controller. When used to input data or write commands they are latched on
the rising edge of Write Enable or Chip Enable, whichever occurs first.
When Chip Enable and Output Enable are both Low, VIL, and Output Disable is at VIH, the
data bus outputs data from the memory array, the electronic signature, the CFI information
or the contents of the status register. The data bus is high impedance when the device is
deselected with Chip Enable at VIH, Output Enable at VIH, Output Disable at VIL or
Reset/Power-down at VIL. The status register content is output on DQ0-DQ7 and DQ8-
DQ31 are at VIL.
2.3
2.4
Chip Enable (E)
The Chip Enable, E, input activates the memory control logic, input buffers, decoders and
sense amplifiers. Chip Enable, E, at VIH deselects the memory and reduces the power
consumption to the standby level.
Output Enable (G)
The Output Enable, G, gates the outputs through the data output buffers during a read
operation, when Output Disable GD is at VIH. When Output Enable G is at VIH, the outputs
are high impedance independently of Output Disable.
14/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Signal descriptions
2.5
Output Disable (GD)
The Output Disable, GD, deactivates the data output buffers. When Output Disable, GD, is
at VIH, the outputs are driven by the Output Enable. When Output Disable, GD, is at VIL, the
outputs are high impedance independently of Output Enable. The Output Disable pin must
be connected to an external pull-up resistor as there is no internal pull-up resistor to drive
the pin.
2.6
2.7
Write Enable (W)
The Write Enable, W, input controls writing to the command interface, Address inputs and
Data latches. Both addresses and data can be latched on the rising edge of Write Enable
(also see Latch Enable, L).
Reset/Power-down (RP)
The Reset/Power-down, RP, is used to apply a hardware reset to the memory. A hardware
reset is achieved by holding Reset/Power-down Low, VIL, for at least tPLPH. Writing is
inhibited to protect data, the command interface and the program/erase controller are reset.
The status register information is cleared and power consumption is reduced to deep
power-down level. The device acts as deselected, that is the data outputs are high
impedance.
After Reset/Power-down goes High, VIH, the memory will be ready for bus read operations
after a delay of tPHEL or bus write operations after tPHWL
.
If Reset/Power-down goes Low, VIL, during a Block Erase, or a Program the operation is
aborted, in a time of tPLRH maximum, and data is altered and may be corrupted.
During power-up power should be applied simultaneously to VDD and VDDQ(IN) with RP held
at VIL. When the supplies are stable RP is taken to VIH. Output Enable, G, Chip Enable, E,
and Write Enable, W, should be held at VIH during power-up.
In an application, it is recommended to associate reset/power-down pin, RP, with the reset
signal of the microprocessor. Otherwise, if a reset operation occurs while the memory is
performing an erase or program operation, the memory may output the status register
information instead of being initialized to the default asynchronous random read.
See Table 22: Reset, power-down and power-up AC characteristics and Figure 17: Reset,
power-down and power-up AC waveforms - control pins low, for more details.
2.8
Latch Enable (L)
The bus interface can be configured to latch the address inputs on the rising edge of Latch
Enable, L, for asynchronous latch enable controlled read or write or synchronous burst read
operations. In synchronous burst read operations the address is latched on the active edge
of the Clock when Latch Enable is Low, VIL. Once latched, the addresses may change
without affecting the address used by the memory. When Latch Enable is Low, VIL, the latch
is transparent. Latch Enable, L, can remain at VIL for asynchronous random read and write
operations.
15/70
Signal descriptions
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
2.9
Burst Clock (K)
The Burst Clock, K, is used to synchronize the memory with the external bus during
synchronous burst read operations. Bus signals are latched on the active edge of the Clock.
The Clock can be configured to have an active rising or falling edge. In synchronous burst
read mode the address is latched on the first active clock edge when Latch Enable is Low,
VIL, or on the rising edge of Latch Enable, whichever occurs first.
During asynchronous bus operations the Clock is not used.
2.10
Burst Address Advance (B)
The Burst Address Advance, B, controls the advancing of the address by the internal
address counter during synchronous burst read operations.
Burst Address Advance, B, is only sampled on the active clock edge of the Clock when the
X-latency time has expired. If Burst Address Advance is Low, VIL, the internal address
counter advances. If Burst Address Advance is High, VIH, the internal address counter does
not change; the same data remains on the data inputs/outputs and Burst Address Advance
is not sampled until the Y-latency expires.
The Burst Address Advance, B, may be tied to VIL.
2.11
Valid Data Ready (R)
The Valid Data Ready output, R, is an open drain output that can be used, during
synchronous burst read operations, to identify if the memory is ready to output data or not.
The Valid Data Ready output can be configured to be active on the clock edge of the invalid
data read cycle or one cycle before. Valid Data Ready, at VIH, indicates that new data is or
will be available. When Valid Data Ready is Low, VIL, the previous data outputs remain
active.
In all asynchronous operations, Valid Data Ready is high impedance. It may be tied to other
components with the same Valid Data Ready signal to create a unique system Ready signal.
The Valid Data Ready output has an internal pull-up resistor of around 1 MΩ powered from
V
DDQ, designers should use an external pull-up resistor of the correct value to meet the
external timing requirements for Valid Data Ready going to VIH.
2.12
Write Protect (WP)
The Write Protect, WP, provides protection against program or erase operations. When
Write Protect, WP, is at VIL the first two (in the bottom configuration) or last two (in the top
configuration) parameter blocks and all main blocks are locked. When Write Protect WP is
at VIH all the blocks can be programmed or erased, if no other protection is used.
2.13
Supply voltage (VDD)
The supply voltage, VDD, is the core power supply. All internal circuits draw their current
from the VDD pin, including the program/erase controller.
16/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Signal descriptions
2.14
2.15
2.16
Output supply voltage (VDDQ)
The output supply voltage, VDDQ, is the output buffer power supply for all operations (read,
program and erase) used for DQ0-DQ31 when used as outputs.
Input supply voltage (VDDQIN
)
The input supply voltage, VDDIN, is the power supply for all input signal. Input signals are: K, B,
L, W, GD, G, E, A0-A18 and DQ0-DQ31, when used as inputs.
Program/erase supply voltage (VPP)
The program/erase supply voltage, VPP, is used for program and erase operations. The
memory normally executes program and erase operations at VPP1 voltage levels. In a
manufacturing environment, programming may be speeded up by applying a higher voltage
level, VPPH, to the VPP pin.
The voltage level VPPH may be applied for a total of 80 hours over a maximum of 1000
cycles. Stressing the device beyond these limits could damage the device.
2.17
Ground (VSS and VSSQ)
The ground VSS is the reference for the internal supply voltage VDD. The ground VSSQ is the
reference for the output and input supplies VDDQ, and VDDQIN. It is essential to connect VSS
and VSSQ together.
Note:
A 0.1 µF capacitor should be connected between the supply voltages, VDD, VDDQ and VDDIN
and the grounds, VSS and VSSQ to decouple the current surges from the power supply. The
PCB track widths must be sufficient to carry the currents required during all operations of the
parts, see Table 15: DC characteristics, for maximum current supply requirements.
2.18
2.19
Don’t use (DU)
This pin should not be used as it is internally connected. Its voltage level can be between
V
SS and VDDQ or leave it unconnected.
Not connected (NC)
This pin is not physically connected to the device.
17/70
Bus operations
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
3
Bus operations
Each bus operation that controls the memory is described in this section, see Table 4,
Table 5 and Table 6 Bus operations, for a summary. The bus operation is selected through
the burst configuration register; the bits in this register are described at the end of this
section.
On power-up or after a hardware reset the memory defaults to asynchronous bus read and
asynchronous bus write, no other bus operation can be performed until the burst control
register has been configured.
The electronic signature, CFI or status register will be read in asynchronous mode
regardless of the burst control register settings.
Typically glitches of less than 5 ns on Chip Enable or Write Enable are ignored by the
memory and do not affect bus operations.
3.1
Asynchronous bus operations
For asynchronous bus operations refer to Table 4 together with the following text.
3.1.1
Asynchronous bus read
Asynchronous bus read operations read from the memory cells, or specific registers
(electronic signature, status register, CFI and burst configuration register) in the command
interface. A valid bus operation involves setting the desired address on the address inputs,
applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write Enable
and Output Disable High, VIH. The data inputs/outputs will output the value, see Figure 8:
Asynchronous bus read AC waveforms, and Table 16: Asynchronous bus read AC
characteristics, for details of when the output becomes valid.
Asynchronous read is the default read mode which the device enters on power-up or on
return from reset/power-down.
3.1.2
Asynchronous latch controlled bus read
Asynchronous latch controlled bus read operations read from the memory cells or specific
registers in the command interface. The address is latched in the memory before the value
is output on the data bus, allowing the address to change during the cycle without affecting
the address that the memory uses.
A valid bus operation involves setting the desired address on the address inputs, setting
Chip Enable and Latch Enable Low, VIL and keeping Write Enable High, VIH; the address is
latched on the rising edge of Latch Enable. Once latched, the address inputs can change.
Set Output Enable Low, VIL, to read the data on the data inputs/outputs; see Figure 9:
Asynchronous latch controlled bus read AC waveforms, and Table 17: Asynchronous latch
controlled bus read AC characteristics, for details on when the output becomes valid.
Note that, since the Latch Enable input is transparent when set Low, VIL, asynchronous bus
read operations can be performed when the memory is configured for asynchronous latch
enable bus operations by holding Latch Enable Low, VIL throughout the bus operation.
18/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Bus operations
3.1.3
Asynchronous page read
Asynchronous page read operations are used to read from several addresses within the
same memory page. Each memory page is 4 double-words and is addressed by the
address inputs A0 and A1.
Data is read internally and stored in the page buffer. Valid bus operations are the same as
asynchronous bus read operations but with different timings. The first read operation within
the page has identical timings, subsequent reads within the same page have much shorter
access times. If the page changes then the normal, longer timings apply again. Page read
does not support latched controlled read.
See Figure 10: Asynchronous page read AC waveforms, and Table 18: Asynchronous page
read AC characteristics, for details on when the outputs become valid.
3.1.4
Asynchronous bus write
Asynchronous bus write operations write to the command interface to send commands to
the memory or to latch addresses and input data to program. Bus write operations are
asynchronous, the clock, K, is don’t care during bus write operations.
A valid asynchronous bus write operation begins by setting the desired address on the
address inputs, and setting Chip Enable, Write Enable and Latch Enable Low, VIL, and
Output Enable High, VIH, or Output Disable Low, VIL. The address inputs are latched by the
command interface on the rising edge of Chip Enable or Write Enable, whichever occurs
first. Commands and input data are latched on the rising edge of Chip Enable, E, or Write
Enable, W, whichever occurs first. Output Enable must remain High, and Output Disable
Low, during the whole asynchronous bus write operation.
See Figure 11: Asynchronous write AC waveforms, and Table 19: Asynchronous write and
latch controlled write AC characteristics, for details of the timing requirements.
3.1.5
Asynchronous latch controlled bus write
Asynchronous latch controlled bus write operations write to the command interface to send
commands to the memory or to latch addresses and input data to program. Bus write
operations are asynchronous, the clock, K, is don’t care during bus write operations.
A valid asynchronous latch controlled bus write operation begins by setting the desired
address on the address inputs and pulsing Latch Enable Low, VIL. The address inputs are
latched by the command interface on the rising edge of Latch Enable, Write Enable or Chip
Enable, whichever occurs first. Commands and input data are latched on the rising edge of
Chip Enable, E, or Write Enable, W, whichever occurs first. Output Enable must remain
High, and Output Disable Low, during the whole asynchronous bus write operation.
See Figure 12: Asynchronous latch controlled write AC waveforms, and Table 19:
Asynchronous write and latch controlled write AC characteristics, for details of the timing
requirements.
3.1.6
Output Disable
The data outputs are high impedance when the Output Enable, G, is at VIH or Output
Disable, GD, is at VIL.
19/70
Bus operations
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
3.1.7
Standby mode
When Chip Enable is High, VIH, and the Program/Erase controller is idle, the memory enters
Standby mode, the power consumption is reduced to the standby level and the Data
inputs/outputs pins are placed in the high impedance state regardless of Output Enable,
Write Enable or Output Disable inputs.
3.1.8
Automatic low power mode
If there is no change in the state of the bus for a short period of time during asynchronous
bus read operations the memory enters auto low power mode where the internal supply
current is reduced to the auto-standby supply current. The data inputs/outputs will still
output data if a bus read operation is in progress.
Automatic low power is only available in asynchronous read modes.
3.1.9
Power-down mode
The memory is in power-down when Reset/Power-down, RP, is at VIL. The power
consumption is reduced to the power-down level and the outputs are high impedance,
independent of the Chip Enable, E, Output Enable, G, Output Disable, GD, or Write Enable,
W, inputs.
3.1.10
Electronic signature
Two codes identifying the manufacturer and the device can be read from the memory
allowing programming equipment or applications to automatically match their interface to
the characteristics of the memory. The electronic signature is output by giving the Read
Electronic Signature command. The manufacturer code is output when all the address
inputs are at VIL. The device code is output when A1 is at VIH and all the other address pins
are at VIL (see Table 5: Asynchronous read electronic signature operation). Issue a Read
Memory Array command to return to read mode.
Table 4.
Bus operation
Asynchronous bus operations(1)
Step
E
G
GD
W
RP
L
A0-A18 DQ0-DQ31
Asynchronous bus read
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Address Data output
IL
IL
IL
IL
IL
IL
IL
IL
IL
IH
IL
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
Address Latch
Read
V
V
V
V
V
V
V
V
V
V
V
Address
X
High-Z
IH
IL
IH
IH
Asynchronous latch
controlled bus read
V
V
V
V
V
Data output
IL
IL
IH
IH
Asynchronous page read
Asynchronous bus write
X
Address Data output
Address Data input
V
X
V
V
V
IL
IL
IL
Address Latch
Write
V
V
V
Address
High-Z
Data input
High-Z
IL
IH
IH
IH
IH
Asynchronous latch
controlled bus write
V
V
X
V
V
X
X
X
X
X
IL
IH
IH
IH
Output Enable, G
Output Disable, GD
Standby
V
V
V
X
IH
V
V
X
X
X
High-Z
IL
IL
V
X
X
X
High-Z
Reset/power-down
1. X = don’t care.
X
X
X
X
V
High-Z
IL
20/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Bus operations
Table 5.
Code
Asynchronous read electronic signature operation
Device
E
G
GD
W
A18-A0 DQ31-DQ0
Manufacturer
Device
All
V
V
V
V
V
00000h 00000020h
IL
IL
IL
IL
IH
IH
IH
IH
M58BW016DT
M58BW016FT
V
V
V
V
V
V
V
V
V
00001h 00008836h
M58BW016DB
M58BW016FB
V
V
00001h 00008835h
IL
IL
IL
IL
IH
IH
IH
IH
Burst configuration
register
(1)
00005h
BCR
1. BCR = Burst configuration register.
3.2
Synchronous bus operations
For synchronous bus operations refer to Table 6 together with the following text.
3.2.1
Synchronous burst read
Synchronous burst read operations are used to read from the memory at specific times
synchronized to an external reference clock.
In the M58BW016FT and M58BW016FB only, once the memory is configured in burst
mode, it is mandatory to have an active clock signal since the switching of the output buffer
data bus is synchronized to the active edge of the clock. In the absence of clock, no data is
output.
Caution:
The M58BW016DT and M58BW016DB are not concerned by the paragraph above.
The burst type, length and latency can be configured. The different configurations for
synchronous burst read operations are described in Section 3.3: Burst configuration
register. Refer to Figure 4 and Figure 5 for examples of synchronous burst operations.
In continuous burst read, one burst read operation can access the entire memory
sequentially by keeping the Burst Address Advance B at VIL for the appropriate number of
clock cycles. At the end of the memory address space the burst read restarts from the
beginning at address 000000h.
A valid synchronous burst read operation begins when the Burst Clock is active and Chip
Enable and Latch Enable are Low, VIL. The burst start address is latched and loaded into
the internal burst address counter on the valid Burst Clock K edge (rising or falling
depending on the value of M6) or on the rising edge of Latch Enable, whichever occurs first.
After an initial memory latency time, the memory outputs data each clock cycle (or two clock
cycles depending on the value of M9). The Burst Address Advance B input controls the
memory burst output. The second burst output is on the next clock valid edge after the Burst
Address Advance B has been pulled Low.
Valid Data Ready, R, monitors if the memory burst boundary is exceeded and the burst
controller of the microprocessor needs to insert wait states. When Valid Data Ready is Low
on the active clock edge, no new data is available and the memory does not increment the
internal address counter at the active clock edge even if Burst Address Advance, B, is Low.
21/70
Bus operations
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Valid Data Ready may be configured (by bit M8 of burst configuration register) to be valid
immediately at the valid clock edge or one data cycle before the valid clock edge.
Synchronous burst read will be suspended if Burst Address Advance, B, goes High, VIH.
If Output Enable is at VIL and Output Disable is at VIH, the last data is still valid.
If Output Enable, G, is at VIH or Output Disable, GD, is at VIL, but the Burst Address
Advance, B, is at VIL the internal Burst Address counter is incremented at each Burst Clock
K valid edge.
The synchronous burst read timing diagrams and AC characteristics are described in the
AC and DC parameters section. See Figure 13, Figure 14, Figure 15 and Figure 16, and
Table 20.
3.2.2
Synchronous burst read suspend
During a synchronous burst read operation it is possible to suspend the operation, freeing
the data bus for other higher priority devices.
A valid synchronous burst read operation is suspended when both Output Enable and Burst
Address Advance are High, VIH. The Burst Address Advance going High, VIH, stops the
burst counter and the Output Enable going High, VIH, inhibits the data outputs. The
synchronous burst read operation can be resumed by setting Output Enable Low.
Table 6.
Synchronous burst read bus operations(1)(2)
A0-A18
DQ0-DQ31
(3)
Bus operation
Step
E
G
GD RP
K
L
B
Address Latch
Read
V
V
X
V
V
V
V
T
V
X
Address input
Data output
High-Z
IL
IL
IL
IL
IH
IH
IH
IH
IH
IL
IH
IH
IH
V
V
V
V
V
T
X
T
V
V
V
V
IL
IH
IL
Read Suspend
Read Resume
V
X
V
IH
IH
Synchronous
burst read
V
V
V
V
Data output
IL
IH
IL
IL
Burst Address
Advance
V
V
X
V
V
T
V
High-Z
IL
IH
IH
IH
IH
Read Abort, E
V
X
X
X
X
X
X
X
High-Z
High-Z
IH
Read Abort, RP
X
X
V
X
X
IL
1. X = don't care, V or V
.
IH
IL
2. M15 = 0, bit M15 is in the burst configuration register.
3. T = transition, see M6 in the burst configuration register for details on the active edge of K.
22/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Bus operations
3.3
Burst configuration register
The burst configuration register is used to configure the type of bus access that the memory
will perform.
The burst configuration register is set through the command interface and will retain its
information until it is re-configured, the device is reset, or the device goes into reset/power-
down mode. The burst configuration register bits are described in Table 7. They specify the
selection of the burst length, burst type, burst X and Y latencies and the read operation.
Refer to Figure 4 and Figure 5 for examples of synchronous burst configurations.
3.3.1
3.3.2
Read select bit (M15)
The read select bit, M15, is used to switch between asynchronous and synchronous bus
read operations. When the read select bit is set to ’1’, bus read operations are
asynchronous; when the read select bit is set to ’0’, bus read operations are synchronous.
On reset or power-up the read select bit is set to’1’ for asynchronous accesses.
X-Latency bits (M14-M11)
The X-Latency bits are used during synchronous bus read operations to set the number of
clock cycles between the address being latched and the first data becoming available. For
correct operation the X-Latency bits can only assume the values in Table 7: Burst
configuration register. The X-Latency bits should also be selected in conjunction with
Table 8: Burst type definition to ensure valid settings.
3.3.3
Y-Latency bit (M9)
The Y-Latency bit is used during synchronous bus read operations to set the number of
clock cycles between consecutive reads. The Y-Latency value depends on both the X-
Latency value and the setting in M9.
When the Y-Latency is ‘1’ the data changes each clock cycle; when the Y-Latency is ‘2’ the
data changes every second clock cycle. See Table 7: Burst configuration register, and
Table 8: Burst type definition for valid combinations of the Y-Latency, the X-Latency and the
clock frequency.
3.3.4
3.3.5
Valid data ready bit (M8)
The valid data ready bit controls the timing of the valid data ready output pin, R. When the
valid data ready bit is ’0’ the valid data ready output pin is driven Low for the active clock
edge when invalid data is output on the bus. When the valid data ready bit is ’1’ the valid
data ready output pin is driven Low one clock cycle prior to invalid data being output on the
bus.
Burst type bit (M7)
The burst type bit is used to configure the sequence of addresses read as sequential or
interleaved. When the burst type bit is ’0’ the memory outputs from interleaved addresses;
when the burst type bit is ’1’ the memory outputs from sequential addresses. See Table 8:
Burst type definition, for the sequence of addresses output from a given starting address in
each mode.
23/70
Bus operations
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
3.3.6
3.3.7
3.3.8
Valid clock edge bit (M6)
The valid clock edge bit, M6, is used to configure the active edge of the Clock, K, during
synchronous burst read operations. When the valid clock edge bit is ’0’ the falling edge of
the clock is the active edge; when the valid clock edge bit is ’1’ the rising edge of the clock is
active.
Wrap burst bit (M3)
The burst reads can be confined inside the 4 or 8 double-word boundary (wrap) or
overcome the boundary (no wrap). The wrap burst bit is used to select between wrap and no
wrap. When the wrap burst bit is set to ‘0’ the burst read wraps; when it is set to ‘1’ the burst
read does not wrap.
Burst length bit (M2-M0)
The burst length bits set the maximum number of double-words that can be output during a
synchronous burst read operation before the address wraps. Burst lengths of 4 or 8 are
available for both the sequential and interleaved burst types, and a continuous burst is
available for the sequential type.
Table 7: Burst configuration register gives the valid combinations of the burst length bits that
the memory accepts; Table 8: Burst type definition, gives the sequence of addresses output
from a given starting address for each length.
If either a continuous or a no wrap burst read has been initiated the device will output data
synchronously. Depending on the starting address, the device activates the valid data ready
output to indicate that a delay is necessary before the data is output. If the starting address
is aligned to an 8 double-word boundary, the continuous burst mode will run without
activating the valid data ready output. If the starting address is not aligned to an 8 double-
word boundary, valid data ready is activated to indicate that the device needs an internal
delay to read the successive words in the array.
M10, M5 and M4 are reserved for future use.
24/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Bus operations
Table 7.
Bit
Burst configuration register
Description
Value
Description
Synchronous burst read
0
1
M15
M14
Read select
Asynchronous read (default at power-on)
Reserved (default value)
Reserved (default value)
Reserved
0
000
001
010
011
100
101
110
111
0
(2)
4, 4-1-1-1
(3)
5
6
7
8
, 5-1-1-1, 5-2-2-2
, 6-1-1-1, 6-2-2-2
, 7-1-1-1, 7-2-2-2
, 8-1-1-1, 8-2-2-2
(1)
M13-M11
X-Latency
(3)
(3)
(3)
Reserved
M10
M9
Reserved (default value)
One burst clock cycle (default value)
Two burst clock cycles
0
(4)
Y-Latency
1
R valid Low during valid burst clock edge (default
value)
0
M8
Valid data ready
1
0
R valid Low 1 data cycle before valid burst clock edge
Interleaved (default value)
Sequential
M7
M6
Burst type
1
0
Falling burst clock edge (default value)
Rising burst clock edge
Reserved (default value)
Reserved
Valid clock edge
1
00
01
10
11
M5-M4
M3
Reserved
Reserved
0
Wrap (default value)
No wrap
Wrapping
1
000
001
010
011
100
101
110
111
Reserved (default value)
4 double-words
8 double-words
Reserved
M2-M0
Burst length
Reserved
Reserved
Reserved
Continuous
1. X latencies can be calculated as: (t
– t
+ t
) + t
< (X -1) t . (X is an integer
AVQV
LLKH
QVKH
SYSTEM MARGIN K
number from 4 to 8, t is the clock period and t
K
is the time margin required for the
SYSTEM MARGIN
calculation).
2. This feature is available for the M58BW016F version up to the full operative frequency of 56 MHz, and for
the M58BW016D version only if the operative frequency is below 45 MHz.
3. The M58BW016F version has a maximum operative frequency of 66 MHz, fully factory tested.
4. Y latencies can be calculated as: t
+ t
+ t
< Y t
KHQV
SYSTEM MARGIN
QVKH K.
25/70
Bus operations
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 8.
Burst type definition
Starting x 4 x 4
address sequential interleaved
x 8
sequential
x 8
interleaved
M 3
Continuous
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
–
0-1-2-3
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
–
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
0-1-2-3-4-5-6-7-8-9-10..
1-2-3-4-5-6-7-8-9-10-11..
2-3-4-5-6-7-8-9-10-11-12..
3-4-5-6-7-8-9-10-11-12-13..
4-5-6-7-8-9-10-11-2-13-14..
5-6-7-8-9-10-11-12-13-14..
6-7-8-9-10-11-12-13-14-15..
1-0-3-2
2-3-0-1
3-2-1-0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
7-6-5-4-3-2-1-0 7-8-9-10-11-12-13-14-15-16..
–
–
–
–
–
–
–
–
–
–
–
8-9-10-11-12-13-14-15-16-17..
0-1-2-3-4-5-6-7-8-9-10..
0-1-2-3
1-2-3-4
2-3-4-5
3-4-5-6
4-5-6-7
5-6-7-8
6-7-8-9
7-8-9-10
8-9-10-11
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-8
2-3-4-5-6-7-8-9
3-4-5-6-7-8-9-10
4-5-6-7-8-9-10-11
5-6-7-8-9-10-11-12
6-7-8-9-10-11-12-13
7-8-9-10-11-12-13-14
8-9-10-11-12-13-14-15
1-2-3-4-5-6-7-8-9-10-11..
2-3-4-5-6-7-8-9-10-11-12..
3-4-5-6-7-8-9-10-11-12-13..
4-5-6-7-8-9-10-11-12-13-14..
5-6-7-8-9-10-11-12-13-14..
6-7-8-9-10-11-12-13-14-15..
7-8-9-10-11-12-13-14-15-16..
8-9-10-11-12-13-14-15-16-17..
26/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Bus operations
Figure 4.
Example burst configuration X-1-1-1
0
1
2
3
4
5
6
7
8
9
K
ADD
VALID
L
DQ
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
VALID
4-1-1-1
5-1-1-1
DQ
VALID
VALID
VALID
VALID
DQ
DQ
DQ
VALID
VALID
VALID
VALID
VALID
6-1-1-1
7-1-1-1
8-1-1-1
VALID
VALID
AI03841
Figure 5.
Example burst configuration X-2-2-2
0
1
2
3
4
5
6
7
8
9
K
ADD
VALID
L
DQ
NV
VALID
NV
NV
VALID
NV
VALID
5-2-2-2
DQ
DQ
DQ
NV
VALID
NV
VALID
NV
NV
VALID
NV
VALID
NV
6-2-2-2
7-2-2-2
8-2-2-2
VALID
NV=NOT VALID
AI04406b
27/70
Command interface
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
4
Command interface
All bus write operations to the memory are interpreted by the command interface.
Commands consist of one or more sequential bus write operations. The commands are
summarized in Table 9: Commands. Refer to Table 9 in conjunction with the text
descriptions below.
4.1
4.2
Read Memory Array command
The Read Memory Array command returns the memory to read mode. One bus write cycle is
required to issue the Read Memory Array command and return the memory to read mode.
Subsequent read operations will output the addressed memory array data. Once the
command is issued the memory remains in read mode until another command is issued.
From read mode bus read commands will access the memory array.
Read Electronic Signature command
The Read Electronic Signature command is used to read the manufacturer code, the device
code or the burst configuration register. One bus write cycle is required to issue the Read
Electronic Signature command. Once the command is issued subsequent bus read
operations, depending on the address specified, read the manufacturer code, the device
code or the burst configuration register until another command is issued; see Table 5:
Asynchronous read electronic signature operation.
4.3
Read Query command
The Read Query command is used to read data from the common Flash interface (CFI)
memory area. One bus write cycle is required to issue the Read Query command. Once the
command is issued subsequent bus read operations, depending on the address specified,
read from the common Flash interface memory area. See Appendix A: Common Flash
interface (CFI), Table 26, Table 27, Table 28, Table 29 and Table 30 for details on the
information contained in the common Flash interface (CFI) memory area.
28/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Command interface
4.4
Read Status Register command
The Read Status Register command is used to read the status register. One bus write cycle
is required to issue the Read Status Register command. Once the command is issued
subsequent bus read operations read the status register until another command is issued.
The status register information is present on the output data bus (DQ1-DQ7) when Chip
Enable E and Output Enable G are at VIL and Output Disable is at VIH.
An interactive update of the status register bits is possible by toggling Output Enable or
Output Disable. It is also possible during a program or erase operation, by deactivating the
device with Chip Enable at VIH and then reactivating it with Chip Enable and Output Enable
at VIL and Output Disable at VIH.
The content of the status register may also be read at the completion of a program, erase or
suspend operation. During a Block Erase or Program command, DQ7 indicates the
program/erase controller status. It is valid until the operation is completed or suspended.
See the section on the status register and Table 11 for details on the definitions of the status
register bits.
4.5
Clear Status Register command
The Clear Status Register command can be used to reset bits 1, 3, 4 and 5 in the status
register to ‘0’. One bus write is required to issue the Clear Status Register command. Once
the command is issued the memory returns to its previous mode, subsequent bus read
operations continue to output the same data.
The bits in the status register are sticky and do not automatically return to ‘0’ when a new
Program or Erase command is issued. If any error occurs then it is essential to clear any
error bits in the status register by issuing the Clear Status Register command before
attempting a new Program, Erase or Resume command.
29/70
Command interface
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
4.6
Block Erase command
The Block Erase command can be used to erase a block. It sets all of the bits in the block to
‘1’. All previous data in the block is lost. If the block is protected then the erase operation will
abort, the data in the block will not be changed and the status register will output the error.
Two bus write operations are required to issue the command; the first write cycle sets up the
Block Erase command, the second write cycle confirms the Block Erase command and
latches the block address in the program/erase controller and starts it. The sequence is
aborted if the Confirm command is not given and the device will output the status register
data with bits 4 and 5 set to '1'.
Once the command is issued subsequent bus read operations read the status register. See
the section on the status register for details on the definitions of the status register bits.
During the erase operation the memory will only accept the Read Status Register command
and the Program/Erase Suspend command. All other commands will be ignored. The
command can be executed using either VDD (for a normal erase operation) or VPP (for a fast
erase operation). If VPP is in the VPPH range when the command is issued then a fast erase
operation will be executed, otherwise the operation will use VDD. If VPP goes below the VPP
lockout voltage, VPPLK, during a fast erase the operation aborts, the status register VPP
status bit is set to ‘1’ and the command must be re-issued.
Typical erase times are given in Table 10.
See Appendix B: Flowcharts, Figure 24: Block erase flowchart and pseudocode, for a
suggested flowchart on using the Block Erase command.
4.7
Program command
The Program command is used to program the memory array. Two bus write operations are
required to issue the command; the first write cycle sets up the Program command, the
second write cycle latches the address and data to be programmed in the program/erase
controller and starts it. A program operation can be aborted by writing FFFFFFFFh to any
address after the program set-up command has been given.
Once the command is issued subsequent bus read operations read the status register. See
the section on the status register for details on the definitions of the status register bits.
During the program operation the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands will be ignored.
If Reset/Power-down, RP, falls to VIL during programming the operation will be aborted.
The command can be executed using either VDD (for a normal program operation) or VPP
(for a fast program operation). If VPP is in the VPPH range when the command is issued then
a fast program operation will be executed, otherwise the operation will use VDD. If VPP goes
below the VPP lockout voltage, VPPLK, during a fast program the operation aborts and the
status register VPP status bit is set to ‘1’. As data integrity cannot be guaranteed when the
program operation is aborted, the memory block must be erased and reprogrammed.
See Appendix B: Flowcharts on page 59, Figure 22: Program flowchart and pseudocode, for
a suggested flowchart on using the Program command.
30/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Command interface
4.8
Program/Erase Suspend command
The Program/Erase Suspend command is used to pause a program or erase operation. The
command will only be accepted during a program or erase operation. It can be issued at any
time during a program or erase operation. The command is ignored if the device is already
in suspend mode.
One bus write cycle is required to issue the Program/Erase Suspend command and pause
the program/erase controller. Once the command is issued it is necessary to poll the
program/erase controller status bit (bit 7) to find out when the program/erase controller has
paused; no other commands will be accepted until the program/erase controller has paused.
After the program/erase controller has paused, the memory will continue to output the status
register until another command is issued.
During the polling period between issuing the Program/Erase Suspend command and the
program/erase controller pausing it is possible for the operation to complete. Once the
program/erase controller status bit (bit 7) indicates that the program/erase controller is no
longer active, the program suspend status bit (bit 2) or the erase suspend status bit (bit 6)
can be used to determine if the operation has completed or is suspended. For timing on the
delay between issuing the Program/Erase Suspend command and the program/erase
controller pausing see Table 10.
During Program/Erase Suspend the Read Memory Array, Read Status Register, Read
Electronic Signature, Read Query and Program/Erase Resume commands will be accepted
by the command interface. Additionally, if the suspended operation was erase then the
Program and the Program Suspend commands will also be accepted. When a program
operation is completed inside a Block Erase Suspend the Read Memory Array command
must be issued to reset the device in read mode, then the Erase Resume command can be
issued to complete the whole sequence. Only the blocks not being erased may be read or
programmed correctly.
See Appendix B: Flowcharts, Figure 23: Program suspend & resume flowchart and
pseudocode, and Figure 25: Erase suspend & resume flowchart and pseudocode, for
suggested flowcharts on using the Program/Erase Suspend command.
4.9
Program/Erase Resume command
The Program/Erase Resume command can be used to restart the program/erase controller
after a program/erase suspend operation has paused it. One bus write cycle is required to
issue the Program/Erase Resume command.
See Appendix B: Flowcharts, Figure 23: Program suspend & resume flowchart and
pseudocode, and Figure 25: Erase suspend & resume flowchart and pseudocode, for
suggested flowcharts on using the Program/Erase Resume command.
31/70
Command interface
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
4.10
Set Burst Configuration Register command
The Set Burst Configuration Register command is used to write a new value to the burst
configuration control register which defines the burst length, type, X and Y latencies,
synchronous/asynchronous read mode and the valid clock edge configuration.
Two bus write cycles are required to issue the Set Burst Configuration Register command.
The first cycle writes the setup command and the address corresponding to the set burst
configuration register content. The second cycle writes the burst configuration register data
and the confirm command. Once the command is issued the memory returns to read mode
as if a Read Memory Array command had been issued.
The value for the burst configuration register is always presented on A0-A15. M0 is on A0,
M1 on A1, etc.; the other address bits are ignored.
Table 9.
Commands(1)
Bus operations
Command
1st cycle
2nd cycle
Op.
Addr.
Data
Op.
Addr.
Data
Read Memory Array
≥ 2
≥ 2
Write
X
FFh
Read
RA
RD
Read Electronic Signature
(manufacturer code)
Write
Write
Write
X
X
X
90h
90h
90h
Read
Read
Read
00000h
00001h
00005h
20h
IDh
Read Electronic Signature
(device code)
≥ 2
≥ 2
Read Electronic Signature
(burst configuration register)
BCRh
Read Status Register
Read Query
2
≥ 2
1
Write
Write
Write
Write
X
X
X
X
70h
98h
50h
20h
Read
Read
X
SRDh
QDh
QAh
Clear Status Register
Block Erase
2
Write
Write
BAh
PA
D0h
PD
40h
10h
Program
2
Write
X
Program/Erase Suspend
Program/Erase Resume
1
1
2
Write
Write
Write
X
X
X
B0h
D0h
60h
Set Burst Configuration Register
Write
BCRh
03h
1. X = Don’t care; RA = Read Address, RD = Read Data, ID = Device Code, SRD = Status Register Data, PA
= Program Address; PD = Program Data, QA = Query Address, QD = Query Data, BA = Any address in the
Block, BCR = Burst Configuration Register value.
32/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Command interface
Table 10. Program, erase times and program, erase endurance cycles(1)
M58BW016
Parameters
Typ
Max
Unit
Min
V
= V
V
= 12 V V = V
V
= 12 V
PP
PP
DD
PP
PP
DD
Parameter Block (64 Kbits)
Program
0.030
0.23
0.016
0.060
0.46
0.032
s
s
Main Block (512 Kbits)
Program
0.13
0.26
Parameter Block Erase
Main Block Erase
0.8
1.5
0.64
0.9
1.8
3
1.5
1.8
s
s
Program Suspend Latency
time
3
10
30
µs
µs
Erase Suspend Latency time
10
Program/Erase cycles (per
block)
100,000
cycles
1.
T
= –40 to 125 °C, V = 2.7 V to 3.6 V, V
= 2.4 V to V
DD
.
A
DD
DDQ
33/70
Status register
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
5
Status register
The Status register provides information on the current or previous program or erase
operation. The various bits in the status register convey information and errors on the
operation. They are output on DQ7-DQ0.
To read the status register the Read Status Register command can be issued. The status
register is automatically read after Program, Erase or Program/Erase Resume commands.
The status register can be read from any address.
The contents of the status register can be updated during an erase or program operation by
toggling the Output Enable or Output Disable pins or by deactivating (Chip Enable, VIH) and
then reactivating (Chip Enable and Output Enable, VIL, and Output Disable, VIH.) the device.
The status register bits are summarized in Table 11: Status register bits. Refer to Table 11 in
conjunction with the following text descriptions.
5.1
Program/erase controller status (bit 7)
The Program/erase controller status bit indicates whether the program/erase controller is
active or inactive. When the program/erase controller status bit is set to ‘0’, the
program/erase controller is active; when bit7 is set to ‘1’, the program/erase controller is
inactive.
The program/erase controller status is set to ‘0’ immediately after a Program/Erase
Suspend command is issued until the program/erase controller pauses. After the
program/erase controller pauses the bit is set to ‘1’.
During program and erase operations the program/erase controller status bit can be polled
to find the end of the operation. The other bits in the status register should not be tested until
the program/erase controller completes the operation and the bit is set to ‘1’.
After the program/erase controller completes its operation the erase status (bit5), program
status bits should be tested for errors.
5.2
Erase suspend status (bit 6)
The erase suspend status bit indicates that an erase operation has been suspended and is
waiting to be resumed. The erase suspend status should only be considered valid when the
program/erase controller status bit is set to ‘1’ (program/erase controller inactive); after a
Program/Erase Suspend command is issued the memory may still complete the operation
rather than entering the suspend mode.
When the erase suspend status bit is set to ‘0’, the program/erase controller is active or has
completed its operation; when the bit is set to ‘1’, a Program/Erase Suspend command has
been issued and the memory is waiting for a Program/Erase Resume command.
When a Program/Erase Resume command is issued the erase suspend status bit returns to
‘0’.
34/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Status register
5.3
Erase status (bit 5)
The erase status bit can be used to identify if the memory has failed to verify that the block
has erased correctly. The erase status bit should be read once the program/erase controller
status bit is High (program/erase controller inactive).
When the erase status bit is set to ‘0’, the memory has successfully verified that the block
has erased correctly. When the erase status bit is set to ‘1’, the program/erase controller has
applied the maximum number of pulses to the block and still failed to verify that the block
has erased correctly.
Once set to ‘1’, the erase status bit can only be reset to ‘0’ by a Clear Status Register
command or a hardware reset. If set to ‘1’ it should be reset before a new Program or Erase
command is issued, otherwise the new command will appear to fail.
5.4
Program status (bit 4)
The program status bit is used to identify a program failure. Bit4 should be read once the
program/erase controller status bit is High (program/erase controller inactive).
When bit4 is set to ‘0’ the memory has successfully verified that the device has programmed
correctly. When bit4 is set to ‘1’ the device has failed to verify that the data has been
programmed correctly.
Once set to 1’, the program status bit can only be reset to ‘0’ by a Clear Status Register
command or a hardware reset. If set to ‘1’ it should be reset before a new Program or Erase
command is issued, otherwise the new command will appear to fail.
5.5
VPP status (bit 3)
The VPP status bit can be used to identify an invalid voltage on the VPP pin during fast
program and erase operations. The VPP pin is only sampled at the beginning of a program
or erase operation. Indeterminate results can occur if VPP becomes invalid during a fast
program or erase operation.
When the VPP status bit is set to ‘0’, the voltage on the VPP pin was sampled at a valid
voltage; when the VPP status bit is set to ‘1’, the VPP pin has a voltage that is below the VPP
lockout voltage, VPPLK
.
Once set to ‘1’, the VPP status bit can only be reset to ‘0’ by a Clear Status Register
command or a hardware reset. If set to ‘1’ it should be reset before a new Program or Erase
command is issued, otherwise the new command will appear to fail.
35/70
Status register
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
5.6
Program suspend status (bit 2)
The program suspend status bit indicates that a program operation has been suspended
and is waiting to be resumed. The program suspend status should only be considered valid
when the program/erase controller status bit is set to ‘1’ (program/erase controller inactive);
after a Program/Erase Suspend command is issued the memory may still complete the
operation rather than entering the suspend mode.
When the program suspend status bit is set to ‘0’, the program/erase controller is active or
has completed its operation; when the bit is set to ‘1’, a Program/Erase Suspend command
has been issued and the memory is waiting for a Program/Erase Resume command.
When a Program/Erase Resume command is issued the program suspend status bit returns
to ‘0’.
5.7
Block protection status (bit 1)
The block protection status bit can be used to identify if a program or erase operation has
tried to modify the contents of a protected block.
When the block protection status bit is set to ‘0’, no program or erase operations have been
attempted to protected blocks since the last Clear Status Register command or hardware
reset; when the block protection status bit is set to ‘1’, a program or erase operation has
been attempted on a protected block.
Once set to ‘1’, the block protection status bit can only be reset Low by a Clear Status
Register command or a hardware reset. If set to ‘1’ it should be reset before a new Program
or Erase command is issued, otherwise the new command will appear to fail.
All others bits are reserved.
Table 11.
Bit
Status register bits
Name
Logic level
Definition
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
Ready
Program/erase controller
status
7
6
5
4
3
2
1
Busy
Suspended
Erase suspend status
Erase status
In progress or completed
Erase error
Erase success
Program error
Program status,
Program success
V
V
invalid, abort
OK
PP
PP
V
status
PP
Suspended
Program suspend status
In progress or completed
Program/erase on protected block, abort
No operations to protected sectors
Erase/program in a protected
block
Other bits reserved
36/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Maximum ratings
6
Maximum ratings
Stressing the device above the ratings listed in Table 12: Absolute maximum ratings, may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the Numonyx SURE Program
and other relevant quality documents.
Table 12. Absolute maximum ratings
Value
Symbol
Parameter
Unit
Min
Max
T
Temperature under bias
Storage temperature
–40
–55
125
155
°C
°C
BIAS
T
STG
V
+ 0.6
DDQ
V
Input or output voltage
–0.6
V
IO
V
+ 0.6
DDQIN
V
, V
V
DDQ, DDQIN
Supply voltage
–0.6
–0.6
4.2
V
V
DD
(1)
V
Program voltage
13.5
PP
1. Cumulative time at a high voltage level of 13.5 V should not exceed 80 hours on V pin.
PP
37/70
DC and AC parameters
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
7
DC and AC parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 13: Operating and AC measurement conditions. Designers should check that the
operating conditions in their circuit match the measurement conditions when relying on the
quoted parameters.
Table 13. Operating and AC measurement conditions
Value
Parameter
Units
Min
Max
Supply voltage (V
)
2.7
2.4
3.6
V
V
DD
Input/output supply voltage (V
)
V
DD
DDQ
Grade 6
Grade 3
–40
–40
90
°C
°C
pF
ns
ns
V
Ambient temperature (T )
A
125
Load capacitance (C )
30
L
Clock rise and fall times
Input rise and fall times
Input pulses voltages
4
4
0 to V
DDQ
Input and output timing ref. voltages
V
/2
V
DDQ
Figure 6.
AC measurement input/output waveform
V
DDQ
V
DDQIN
V
/2
/2
DDQ
V
DDQIN
0 V
AI04153
1.
V
= V
.
DD
DDQ
38/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Figure 7.
AC measurement load circuit
1.3 V
1N914
3.3 kΩ
DEVICE
UNDER
TEST
OUT
C
L
C
includes JIG capacitance
L
AI04154
Table 14. Device capacitance(1)(2)
Symbol
Parameter
Test condition
Typ
Max
Unit
C
Input capacitance
V
= 0 V
IN
6
8
8
pF
pF
IN
C
Output capacitance
V
= 0 V
OUT
12
OUT
1.
T = 25 °C, f = 1 MHz.
A
2. Sampled only, not 100% tested.
39/70
DC and AC parameters
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 15. DC characteristics
Symbol
Parameter
Test condition
Min
Max
Unit
I
Input Leakage current
Output Leakage current
0 V≤ V ≤ V
±1
±5
20
25
µA
µA
LI
IN
DDQ
I
0 V
≤
V
≤V
OUT DDQ
LO
M58BW016DT/B
M58BW016FT/B
E = V ,G = V ,
IL
IH
I
Supply current (Random Read)
Supply current (Power-up)
mA
mA
mA
DD
f
= 6 MHz
add
applies only to
M58BW016FT/B
(1)
DDP-UP
I
E = V
20
30
IH
M58BW016DT/B
M58BW016FT/B
M58BW016DT/B
M58BW016FT/B
M58BW016DT/B
M58BW016FT/B
E = V ,G = V ,
IL
IH
f
= 40 MHz
clock
I
Supply current (Burst Read)
Supply current (Standby)
DDB
30
40
mA
mA
µA
E = V ,G = V ,
IL
IH
f
= 56 MHz
clock
60
E = RP = V
0.2 V
±
DD
150
µA
I
DD1
E = V ± 0.2 V,
SS
Supply current (Auto Low-Power)
Supply current (Reset/Power-down)
60
60
30
µA
µA
RP = V ± 0.2 V
DD
I
I
RP = V ± 0.2 V
DD2
DD3
SS
Supply current (Program or Erase,
Set Lock bit, Erase Lock bit)
Program, Block Erase in progress
M58BW016DT/B
mA
40
150
± 30
± 30
± 5
µA
µA
µA
µA
µA
µA
mA
µA
mA
V
Supply current
(Erase/Program Suspend)
I
E = V
IH
DD4
M58BW016FT/B
I
Program current (Read or Standby)
Program current (Read or Standby)
Program current (Power-down)
V
≥ V
PP
PP
PP
PP1
PP1
I
I
V
≤ V
PP1
PP2
RP = V
IL
V
= V
= V
= V
= V
200
20
Program current (Program)
Program in progress
PP
PP
PP1
PPH
PP1
PPH
I
I
PP3
PP4
V
V
200
20
Program current (Erase) Erase in
progress
PP
PP
V
V
Input Low voltage
–0.5
0.2V
DDQIN
IL
V
Input High voltage (for DQ lines)
0.8V
V +0.3
DDQ
V
IH
DDQIN
DDQIN
Input High voltage (for input only
lines)
V
0.8V
3.6
V
IH
V
Output Low voltage
I
= 100 µA
0.1
V
V
OL
OL
V
Output High voltage CMOS
I
= –100 µA
V
–0.1
DDQ
OH
OH
Program voltage
(program or erase operations)
V
2.7
11.4
3.6
12.6
2.2
V
V
V
V
PP1
PPH
LKO
Program voltage
(program or erase operations)
V
V
V
supply voltage (erase and
DD
program lockout)
V
supply voltage (erase and
PP
V
I
11.4
PPLK
program lockout)
1.
is defined only during the power-up phase of the M58BW016FT/B, from the moment current is applied with RP Low
to the moment when the supply voltage has become stable and RP is brought to High.
DDP-UP
40/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Figure 8.
Asynchronous bus read AC waveforms
tAVAV
VALID
A0-A18
tAVQV
tEHLX
tLLEL
L
tELQX
tELQV
tAXQX
E
tGLQX
tGLQV
tEHQX
tEHQZ
G
GD
tGHQX
tGHQZ
DQ0-DQ31
OUTPUT
See also Page Read
AI04407C
.
Table 16. Asynchronous bus read AC characteristics
M58BW016
Symbol
Parameter
Test condition
Unit
70
80
t
Address Valid to Address Valid
E = V , G = V
Min
70
80
80
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
IL
IL
IL
IL
t
Address Valid to Output Valid
E = V , G = V
Max 70
AVQV
AXQX
IL
t
Address Transition to Output Transition
Chip Enable High to Latch Enable Transition
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
E = V , G = V
Min
Min
Min
0
0
0
IL
t
0
EHLX
EHQX
t
G = V
G = V
G = V
G = V
0
IL
IL
IL
IL
IL
IL
IL
IL
t
Max 20
Max 70
20
80
0
EHQZ
(1)
t
Chip Enable Low to Output Valid
ELQV
t
Chip Enable Low to Output Transition
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable to Output Transition
Latch Enable Low to Chip Enable Low
Min
Min
0
0
ELQX
t
E = V
E = V
E = V
E = V
0
GHQX
t
Max 15
Max 25
15
25
0
GHQZ
t
t
GLQV
GLQX
Min
Min
0
0
t
0
LLEL
1. Output Enable G may be delayed up to t
- t
after the falling edge of Chip Enable E without
ELQV GLQV
increasing t
.
ELQV
41/70
DC and AC parameters
Figure 9.
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Asynchronous latch controlled bus read AC waveforms
A0-A18
VALID
tAVLL
tLHAX
L
tLHLL
tLLLH
tELLL
tEHLX
E
tEHQX
tEHQZ
tGLQX
tGLQV
G
tLLQX
tLLQV
tGHQX
GHQZ
DQ0-DQ31
OUTPUT
See also Page Read
AI03645
Table 17. Asynchronous latch controlled bus read AC characteristics
M58BW016
Symbol
Parameter
Test condition
Unit
70
80
t
Address Valid to Latch Enable Low
Chip Enable High to Latch Enable Transition
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
E = V
Min
Min
Min
Max
Min
Min
Max
Max
Min
Min
Min
Min
0
0
0
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVLL
IL
t
EHLX
t
G = V
G = V
0
0
EHQX
IL
t
20
0
20
0
EHQZ
IL
t
Chip Enable Low to Latch Enable Low
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
Latch Enable High to Address Transition
Latch Enable High to Latch Enable Low
Latch Enable Low to Latch Enable High
Latch Enable Low to Output Valid
ELLL
t
E = V
E = V
E = V
E = V
E = V
0
0
GHQX
IL
IL
IL
IL
IL
t
15
25
0
15
25
0
GHQZ
t
t
GLQV
GLQX
t
5
5
LHAX
t
10
10
70
0
10
10
80
0
LHLL
LLLH
t
E = V
IL
t
E = V , G = V Max
LLQV
LLQX
IL
IL
t
Latch Enable Low to Output Transition
E = V , G = V
Min
IL
IL
42/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 10. Asynchronous page read AC waveforms
DC and AC parameters
A0-A1
A0 and/or A1
tAVQV1
tAXQX
OUTPUT + 1
OUTPUT
DQ0-DQ31
AI03646
Table 18. Asynchronous page read AC characteristics(1)
M58BW016
Symbol
Parameter
Test condition
Unit
70
80
t
Address Valid to Output Valid
E = V , G = V
Max 25
25
6
ns
ns
AVQV1
IL
IL
IL
t
Address Transition to Output Transition
E = V , G = V
Min
6
AXQX
IL
1. For other timings see Table 16: Asynchronous bus read AC characteristics.
43/70
DC and AC parameters
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 11. Asynchronous write AC waveforms
44/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Figure 12. Asynchronous latch controlled write AC waveforms
45/70
DC and AC parameters
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 19. Asynchronous write and latch controlled write AC characteristics
M58BW016
Symbol
Parameter
Test condition
Unit
70
80
t
Address Valid to Latch Enable Low
Address Valid to Write Enable High
Data Input Valid to Write Enable High
Chip Enable Low to Latch Enable Low
Chip Enable Low to Write Enable Low
Latch Enable High to Address Transition
Latch Enable Low to Latch Enable High
latch Enable Low to Write Enable High
Min
0
50
50
0
0
50
50
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVLL
t
E = V
E = V
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
AVWH
DVWH
IL
IL
t
t
ELLL
t
0
0
ELWL
LHAX
t
5
5
t
10
50
0
10
50
0
LLLH
t
E = V
LLWH
IL
t
Output Valid to V Low
PP
QVVPL
t
V
High to Write Enable High
PP
0
0
VPHWH
t
Write Enable High to Address Transition
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Output Enable Low
Write Enable High to Output Valid
E = V
E = V
0
0
WHAX
WHDX
WHEH
IL
IL
t
t
0
0
0
0
t
150
175
20
60
0
150
175
20
60
0
WHGL
WHQV
WHWL
t
t
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Output Valid to Reset/Power-down Low
t
E = V
WLWH
IL
t
QVPL
46/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Figure 13. Synchronous burst read (data valid from ‘n’ clock rising edge)
1. The M58BW016F first data output is synchronized with the clock’s active edge, while the M58BW016D first
data output is not synchronized with the clock’s active edge.
2. In the M58BW016F devices the right access time depends on the clock frequency.
3. For further details, please refer to the section 3.2 Clock signal in burst mode in the application note
AN2461.
47/70
DC and AC parameters
Table 20. Synchronous burst read AC characteristics(1)
Symbol Parameter Test condition
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
M58BW016
Unit
70
80
t
Address Valid to Latch Enable Low
E = V
Min
Min
0
0
ns
ns
AVLL
IL
Burst Address Advance High to Valid
Clock Edge
t
E = V , G = V , L = V
8
8
8
BHKH
IL
IL
IH
IH
Burst Address Advance Low to Valid
Clock Edge
t
E = V , G = V , L = V
Min
Min
8
0
ns
BLKH
IL
IL
t
Chip Enable Low to Latch Enable Low
Output Enable Low to Output Valid
0
ns
ns
ELLL
t
E = V , L = V
IH
Min 25
25
GLQV
IL
Valid Clock Edge to Address
Transition
t
t
E = V
E = V
E = V
Min
Min
Min
5
0
0
5
0
0
ns
ns
ns
KHAX
IL
IL
IL
t
Valid Clock Edge to Latch Enable Low
KHLL
Valid Clock Edge to Latch Enable
Transition
KHLX
E = V , M58BW016DT/B Min
3
3
3
3
ns
ns
IL
t
Valid Clock Edge to Output Transition G = V ,
KHQX
IL
M58BW016FT/B Min
L = V
IH
M58BW016DT/B Min
M58BW016FT/B Min
6
5
6
6
5
6
ns
ns
ns
t
Latch Enable Low to Valid Clock Edge E = V
IL
LLKH
(2)
t
Output Valid to Valid Clock Edge
E = V , G = V , L = V
Min
Min
QVKH
IL
IL
IH
IH
IH
Valid Data Ready Low to Valid Clock
Edge
t
E = V , G = V , L = V
6
6
ns
ns
RLKH
IL
IL
t
Valid Clock Edge to Output Valid
E = V , G = V , L = V
Max 11
11
KHQV
IL
IL
1. For other timings see Table 16: Asynchronous bus read AC characteristics.
2. Data output should be read on the valid clock edge.
Figure 14. Synchronous burst read (data valid from ‘n’ clock rising edge)
n
n+1
n+2
n+3
n+4
n+5
K
tKHQV
tQVKH
DQ0-DQ31
Q0
Q1
Q2
Q3
Q4
Q5
tKHQX
SETUP
Burst Read
Q0 to Q3
Note: n depends on Burst X-Latency
AI04408b
1. For set up signals and timings see synchronous burst read.
48/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Figure 15. Synchronous burst read - continuous - valid data ready output
K
(1)
Output
R
V
V
V
V
V
tRLKH
(2)
AI03649
1. Valid Data Ready = Valid Low during valid clock edge.
2. V= Valid output.
3. R is an open drain output with an internal pull up resistor of 1 MΩ. The internal timing of R follows DQ. An external resistor,
typically 300 kΩ. for a single memory on the R bus, should be used to give the data valid set up time required to recognize
that valid data is available on the next valid clock edge.
Figure 16. Synchronous burst read - burst address advance
K
ADD
VALID
L
ADD
G
Q0
Q1
Q2
tGLQV
tBLKH
tBHKH
B
AI03650
49/70
DC and AC parameters
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 17. Reset, power-down and power-up AC waveforms - control pins low
W, G, E
L
tPHLL
tPHWL
tPHEL
tPHGL
tPLRZ
Hi-Z
Hi-Z
R
tPHWL
tPHEL
tPHGL
tPHRH
RP
tVDHPH
tPLPH
VDD, VDDQ
Power-up
Reset
AI14240
Figure 18. Reset, power-down and power-up AC waveforms - control pins toggling
tWLRH
tGLRH
tELRH
tLLRH
W, G, E
L
tPHLL
tPHWL
tPHEL
tPHGL
tPLRZ
Hi-Z
Hi-Z
R
tPHRH
tPHRH
RP
tVDHPH
tPLPH
VDD, VDDQ
Power-up
Reset
AI14241
50/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
DC and AC parameters
Figure 19. Power supply slope specification
Voltage
VDHH
VDH
Time
tVDH
AI14230b
1. Please refer to the application note AN2601.
Table 21. Power supply AC and DC characteristics
Symbol
Description
Min
Max
Unit
V
Minimum value of power supply
Maximum value of power supply
Time required from power supply to reach the V value
2.7
V
V
DH
V
3.6
DHH
VDH
t
50
50000
µs
DH
Table 22. Reset, power-down and power-up AC characteristics
Symbol
Parameter
Min Max Unit
t
Reset/Power-down High to Chip Enable Low
Reset/Power-down High to Latch Enable Low
Reset/Power-down High to Output Valid
50
50
ns
ns
ns
ns
ns
ns
PHEL
t
PHLL
(1)
t
95
95
PHQV
t
Reset/Power-down High to Write Enable Low
Reset/Power-down High to Output Enable Low
Reset/Power-down Low to Reset/Power-down High
Reset/Power-down High to Valid Data Ready High
50
50
PHWL
t
PHGL
t
100
PLPH
(1)
t
PHRH
M58BW016DT/B
M58BW016FT/B
10
50
µs
µs
ns
ns
ns
ns
ns
µs
t
Supply voltages High to Reset/Power-down High
VDHPH
t
Reset/Power-down Low to Data Ready High Impedance
Write Enable Low to Data Ready High Impedance
Output Enable Low to Data Ready High Impedance
Chip Enable Low to Data Ready High Impedance
Latch Enable Low to Data Ready High Impedance
Reset/PowerDown Low to Flash Ready
80
80
80
80
80
30
PLRZ
t
WLRH
t
GLRH
t
ELRH
t
LLRH
PLRH
t
1. This time is t
+ t
or t
+ t
.
PHEL
AVQV
PHEL
ELQV
51/70
Package mechanical
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
8
Package mechanical
In order to meet environmental requirements, Numonyx offers these devices in RoHS
packages, which are lead-free. The category of second level interconnect is marked on the
package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label.
Figure 20. PQFP80 - 80 lead plastic quad flat pack, package outline
Ne
A2
N
1
e
Nd
D2 D1
D
b
E2
E1
E
A
c
CP
L1
A1
α
L
QFP-B
1. Drawing is not to scale.
52/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Package mechanical
Table 23. PQFP80 - 80 lead plastic quad flat pack, package mechanical data
millimeters
inches
Symbol
Typ
Min
Max
Typ
Min
Max
A
A1
A2
b
3.40
0.134
0.25
2.55
0.30
0.13
22.95
19.90
–
0.010
0.100
0.012
0.005
0.903
0.783
–
2.80
3.05
0.45
0.23
23.45
20.10
–
0.110
0.120
0.018
0.009
0.923
0.791
–
c
D
23.20
20.00
18.40
0.80
0.913
0.787
0.724
0.031
0.677
0.551
0.472
0.031
0.063
D1
D2
e
–
–
–
–
E
17.20
14.00
12.00
0.80
16.95
13.90
–
17.45
14.10
–
0.667
0.547
–
0.687
0.555
–
E1
E2
L
0.65
–
0.95
–
0.026
–
0.037
–
L1
a
1.60
0°
7°
0°
7°
N
80
80
Nd
Ne
24
24
16
16
53/70
Package mechanical
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 21. LBGA80 10 × 12 mm - 8 × 10 active ball array, 1 mm pitch, package
outline
D
D1
FD
FE
SD
SE
E
E1 BALL "A1"
ddd
e
e
b
A
A2
A1
JE_ME
1. Drawing is not to scale.
Table 24. LBGA80 10 × 12 mm - 8 × 10 active ball array, 1 mm pitch, package
mechanical data
millimeters
Min
inches
Min
Symbol
Typ
Max
Typ
Max
A
A1
A2
b
1.60
0.063
0.40
0.016
1.05
0.041
0.60
10.00
7.00
0.024
0.394
0.276
D
–
–
–
–
–
–
–
D1
ddd
E
–
0.006
–
0.15
–
12.00
9.00
–
–
0.472
0.354
–
–
E1
e
–
–
1.00
–
0.039
–
FD
FE
SD
SE
1.50
1.50
–
–
0.059
0.059
–
–
–
–
0.50
0.50
0.020
0.020
54/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Ordering information
9
Ordering information
Table 25. Ordering information scheme
Example:
M58 BW016D
T
8
T
3
F T
Device type
M58
Architecture
B = Burst mode
Operating voltage
W = V = 2.7 V to 3.6 V; V
= V
= 2.4 to V
DDQIN DD
DD
DDQ
Device function
016D = 16-Mbit (x 32), boot block, burst, 0.15 µm
016F = 16-Mbit (x 32), boot block, burst, 0.11 µm
Array matrix
T = Top boot
B = Bottom boot
Speed
7 = 70 ns
8 = 80 ns (only available in the M58BW016D devices)
Package
T = PQFP80
ZA = LBGA 10 × 12 mm
Temperature range
(1)
3 = automotive grade certified , –40 to 125 °C
Version
F = silicon version F (only available in the M58BW016D devices)
Option
T = Tape and reel packing
F = RoHS package, tape and reel packing
1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening according to
AEC Q001 & Q002 or equivalent.
Note:
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact the Numonyx Sales Office nearest to you.
55/70
Common Flash interface (CFI)
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Appendix A
Common Flash interface (CFI)
The common Flash interface is a JEDEC approved, standardized data structure that can be
read from the Flash memory device. It allows a system software to query the device to
determine various electrical and timing parameters, density information and functions
supported by the memory. The system can interface easily with the device, enabling the
software to upgrade itself when necessary.
When the CFI Query command (RCFI) is issued the device enters CFI query mode and the
data structure is read from the memory. Table 26, Table 27, Table 28, Table 29 and Table 30
show the addresses used to retrieve the data.
Table 26. Query structure overview
Offset
Sub-section name
Description
Manufacturer code
00h
01h
10h
1Bh
27h
Device code
CFI Query identification string
System interface information
Device geometry definition
Command set ID and algorithm data offset
Device timing and voltage information
Flash memory layout
Primary algorithm-specific extended query
table
Additional information specific to the primary
algorithm (optional)
(1)
P(h)
Alternate algorithm-specific extended query Additional information specific to the
table alternate algorithm (optional)
(2)
A(h)
1. Offset 15h defines P which points to the primary algorithm extended query address table.
2. Offset 19h defines A which points to the alternate algorithm extended query address table.
Table 27. CFI - query address and data output(1)(2)
Address A0-A18
Data
Instruction
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
51h
52h
59h
"Q"
"R"
"Y"
51h;‘Q’
Query ASCII String 52h;‘R’
59h; ‘Y’
03h
00h
35h
00h
00h
00h
00h
00h
Primary vendor:
Command set and control interface ID code
Primary algorithm extended query address table:
P(h)
Alternate vendor:
Command Set and Control interface ID code
Alternate algorithm extended query address table
1. The x 8 or byte address and the x 16 or word address mode are not available.
2. Query data are always presented on DQ7-DQ0. DQ31-DQ8 are set to '0'.
56/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Common Flash interface (CFI)
Table 28. CFI - device voltage and timing specification
Address A0-A18
Data
Description
(1)
1Bh
1Ch
1Dh
1Eh
27h
36h
B4h
V
V
V
V
min, 2.7 V
max, 3.6 V
min
DD
DD
PP
PP
(1)
(2)
(2)
C6h
04h
max
n
1Fh
2 ms typical time-out for Word, DWord prog – not available
n
20h
00h
2 ms, typical time-out for max buffer write – not available
n
21h
0Ah
2 ms, typical time-out for Erase Block
n
22h
00h
2 ms, typical time-out for chip erase – not available
23h-24h
25h
Reserved
04h
n
2 x typical for individual block erase time-out maximum
n
26h
00h
2 x typical for chip erase max time-out – not available
1. Bits are coded in binary code decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in hexadecimal and scaled in Volts while bit3 to bit0 are in binary code decimal and
scaled in 100 mV.
Table 29. Device geometry definition
Address A0-A18
Data
Description
n
27h
28h
29h
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
15h
03h
00h
00h
00h
02h
1Eh
00h
00h
01h
07h
00h
20h
00h
2 number of bytes memory size
Device interface sync./async.
Organization sync./async.
n
Page size in bytes, 2
Bit7-0 = number of erase block regions in device
Number (n-1) of blocks of identical size; n=31
Erase block region information x 256 bytes per erase block
(64 Kbytes)
Number (n-1) of blocks of identical size; n=8
Erase block region information x 256 bytes per erase block
(8 Kbytes)
57/70
Common Flash interface (CFI)
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 30. Extended query information
Address Address
Data (Hex)
Description
offset
A18-A0
(P)h
35h
36h
37h
38h
39h
50h
52h
49h
"P"
"R"
"Y"
(P+1)h
(P+2)h
(P+3)h
(P+4)h
Query ASCII string - extended table
31h
31h
Major version number
Minor version number
Optional feature: (1=yes, 0=no)
bit0, Chip Erase supported (0=no)
bit1, Suspend Erase supported (1=yes)
bit2, Suspend Program supported (1=yes)
bit3, Lock/Unlock supported (1=yes)
bit4, Queue Erase supported (0=no)
bit 31-5 reserved for future use
(P+5)h
3Ah
86h
(P+6)h
(P+7)h
(P+8)h
3Bh
3Ch
3Dh
01h
00h
00h
Optional features: synchronous read supported
Function allowed after suspend:
(P+9)h
(P+A)h
3Eh
3Fh
01h
Program allowed after Erase Suspend (1=yes)
Bit 7-1 reserved for future use
Reserved
58/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Flowcharts
Appendix B
Flowcharts
Figure 22. Program flowchart and pseudocode
Start
Program Command:
– write 40h
Write 40h
– write Address & Data
(memory enters read status
state after the Program command)
Write Address
& Data
Read Status
Register
do:
– read status register
(E or G must be toggled)
NO
b7 = 1
while b7 = 0
YES
NO
NO
NO
V
Invalid
Error (1)
If b3 = 1, V
invalid error:
PP
PP
– error handler
b3 = 0
YES
Program
Error (1)
If b4 = 1, Program error:
– error handler
b4 = 0
YES
Program to Protect
Block Error
If b1 = 1, Program to Protected Block Error:
– error handler
b1 = 0
YES
End
AI03850b
1. If an error is found, the status register must be cleared before further program/erase operations.
59/70
Flowcharts
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 23. Program suspend & resume flowchart and pseudocode
Start
Write B0h
Program/Erase Suspend Command:
– write B0h
– write 70h
Write 70h
do:
Read Status
Register
– read status register
NO
NO
b7 = 1
YES
while b7 = 0
If b2 = 0, Program completed
b2 = 1
YES
Program Complete
Read Memory Array Command:
– write FFh
Write FFh
– one or more data reads
from other blocks
Read data from
another block
Program Erase Resume Command:
– write D0h
to resume erasure
– if the program operation completed
then this is not necessary. The device
returns to Read Array as normal
(as if the Program/Erase Suspend
command was not issued).
Write D0h
Write FFh
Read Data
Program Continues
AI00612b
60/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Flowcharts
Figure 24. Block erase flowchart and pseudocode
Start
Erase Command:
– write 20h
Write 20h
– write Block Address
(A11-A18) & D0h
(memory enters read status
state after the Erase command)
Write Block Address
& D0h
NO
do:
Read Status
– read status register
(E or G must be toggled)
if Erase command given execute
suspend erase loop
Register
Suspend
YES
NO
Suspend
Loop
b7 = 1
while b7 = 0
YES
NO
YES
NO
NO
V
Invalid
If b3 = 1, V
invalid error:
PP
Error (1)
PP
– error handler
b3 = 0
YES
Command
Sequence Error
If b4, b5 = 1, Command Sequence error:
– error handler
b4 and b5
= 1
NO
Erase
Error (1)
If b5 = 1, Erase error:
– error handler
b5 = 0
YES
Erase to Protected
Block Error
If b1 = 1, Erase to Protected Block Error:
– error handler
b1 = 0
YES
End
AI03851b
1. If an error is found, the status register must be cleared before further program/erase operations.
61/70
Flowcharts
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 25. Erase suspend & resume flowchart and pseudocode
Start
Write B0h
Program/Erase Suspend Command:
– write B0h
– write 70h
Write 70h
do:
Read Status
Register
– read status register
NO
NO
b7 = 1
YES
while b7 = 0
If b6 = 0, Erase completed
b6 = 1
YES
Erase Complete
Read Memory Array command:
– write FFh
Write FFh
– one or more data reads
from other blocks
Read data from
another block
or Program
Program/Erase Resume command:
– write D0h to resume the Erase
operation
– if the Erase operation completed
then this is not necessary. The device
returns to Read mode as normal
(as if the Program/Erase suspend
was not issued).
Write D0h
Write FFh
Read Data
Erase Continues
AI00615b
62/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Flowcharts
Figure 26. Power-up sequence followed by synchronous burst read
Power-up
or Reset
BCR bit 15 = '1'
Asynchronous Read
Set Burst Configuration Register Command:
– write 60h
Write 60h command
– write 03h
and BCR on A15-A0
Write 03h with A15-A0
BCR inputs
BCR bit 15 = '0'
Synchronous Read
AI03834b
63/70
Flowcharts
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 27. Command interface and program/erase controller flowchart (a)
WAIT FOR
COMMAND
WRITE
READ
ARRAY
NO
90h
YES
READ ELEC.
SIGNATURE
NO
98h
YES
D
READ CFI
NO
70h
YES
READ
STATUS
NO
20h
YES
ERASE
SET-UP
NO
40h
YES
ERASE
COMMAND
ERROR
NO
NO
PROGRAM
SET-UP
D0h
50h
E
YES
YES
A
CLEAR
C
STATUS
D
READ
STATUS
B
AI03835
64/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Flowcharts
Figure 28. Command interface and program/erase controller flowchart (b)
E
NO
60h
YES
NO
FFh
SET BCR
SET_UP
YES
NO
03h
YES
D
AI03836b
65/70
Flowcharts
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Figure 29. Command interface and program/erase controller flowchart (c)
A
B
ERASE
YES
READY
NO
NO
READ
STATUS
B0h
YES
ERASE
SUSPEND
YES
READY
NO
NO
ERASE
SUSPENDED
READ
STATUS
YES
YES
READ
STATUS
70h
NO
YES
YES
PROGRAM
SET_UP
40h
NO
C
NO
READ
STATUS
READ
ARRAY
D0h
AI03837
66/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Flowcharts
Figure 30. Command interface and program/erase controller flowchart (d)
C
B
PROGRAM
YES
READY
NO
NO
READ
STATUS
B0h
YES
PROGRAM
SUSPEND
YES
READY
NO
NO
PROGRAM
SUSPENDED
READ
STATUS
YES
YES
READ
STATUS
70h
NO
NO
YES
READ
STATUS
READ
ARRAY
D0h
AI03838
67/70
Revision history
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
10
Revision history
Table 31. Document revision history
Date
Version
Changes
January-2001
05-Jun-2001
15-Jun-2001
17-Jul-2001
01
02
03
04
First Issue.
Major rewrite and restructure.
Nd and Ne values changed in PQFP80 package mechanical table.
PQFP80 package outline drawing and mechanical data table updated.
t
removed from absolute maximum ratings (Table 12).
LEAD
80, 90 and 100 ns speed classes defined (Table 16, Table 17, Table 18,
Table 19 and Table 20 clarified accordingly).
Figure 13, Figure 14, Figure 15 and Figure 16 clarified.
Temperature range 3 and 6 added.
17-Dec-2001
05
Table 13, Table 14, Table 15, Table 22 and CFI Table 27, Table 28,
Table 29, Table 30 clarified.
Document status changed from Product Preview to Preliminary Data.
DC characteristics I , I
AC Bus Read characteristics timing t
and I
clarified.
PP PP1
DD1
17-Jan-2002
30-Aug-2002
06
clarified.
GHQZ
Revision numbering modified: a minor revision will be indicated by
incrementing the tenths digit, and a major revision, by incrementing the
units digit of the previous version (e.g. revision version 06 becomes 6.0).
6.1
References of V pin used for block protection purposes removed.
PP
Figure 8 modified.
Datasheet status changed from Preliminary Data to full Datasheet.
4-Sep-2002
7.0
t
parameter modified in Table 19: Asynchronous write and latch
WLWH
controlled write AC characteristics.
Revision history moved to end of document. V clarified in Program
PP
13-May-2003
16-Oct-2003
7.1
7.2
and Block Erase commands and Status Register, V Status bit. V
PP PPLK
added to DC characteristics table. Timing t
modified.
KHQV
Silicon Version added to Ordering Information Scheme.
Tuning block protection feature removed from the whole document and
root part numbers M58BW016BT/B have been removed.
Figure 22, Figure 23, Figure 24, Figure 25, Figure 26 and Figure 28
updated.
03-Mar-2005
8
LBGA80 package (ZA) removed. Lead-free option added.
90 and 100 ns access times removed and 70 ns added.
Temperature rage 6 removed from Table 25: Ordering information
scheme.
Load capacitance updated in Table 13: Operating and AC measurement
conditions.
06-Sep-2005
3-Mar-2006
16-Jun-2006
9
Updated Table 25: Ordering information scheme on page 55 and
Disclaimer information. Converted document to new template.
10
11
M58BW016FT and M58BW016FB part numbers added. Small text
changes.
68/70
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 31. Document revision history (continued)
Revision history
Date
Version
Changes
LBGA80 package added (see Figure 21 and Table 24).
M58BW016FT and M58BW016FB behavior in Burst mode specified
under Section 3.2.1: Synchronous burst read.
I
, I
and I
current values specified for M58BW016FT and
DDB DD1
DD4
M58BW016FB in Table 15: DC characteristics, I
added.
DD5
09-Nov-2006
12
t
specified for M58BW016FT and M58BW016FB in Table 22:
VDHPH
Reset, power-down and power-up AC characteristics.
t
specified for M58BW016FT and M58BW016FB in Table 20:
KHQX
Synchronous burst read AC characteristics.
23h-24h reserved in Table 28: CFI - device voltage and timing
specification. 3Fh reserved in Table 30: Extended query information.
I
current specified for M58BW016DT/B and M58BW016FT/B in
DD
24-Nov-2006
05-Oct-2007
13
14
Table 15: DC characteristics.
Table 7: Burst configuration register and Table 22: Reset, power-down
and power-up AC characteristics updated.
Modified values for t
in Table 20: Synchronous burst read AC
LLKH
characteristics.
Figure 17: Reset, power-down and power-up AC waveforms - control
pins low updated and Figure 18: Reset, power-down and power-up AC
waveforms - control pins toggling added.
Small text changes.
Added: Figure 19: Power supply slope specification and Table 21: Power
supply AC and DC characteristics.
16-Jan-2008
15
Changed mechanical data of the LBGA package and the description for
the 010 value of M13 M11 bits in Table 7: Burst configuration register.
Minor text changes.
Added: information on data retention and reliability level on page 1, note
3 below Table 7: Burst configuration register, and note 1, 2, 3 below
Figure 13: Synchronous burst read (data valid from ‘n’ clock rising edge).
Modified: note 2 below Table 7: Burst configuration register and
Table 25: Ordering information scheme.
12-Mar-2008
26-Mar-2008
16
17
Minor text changes.
Applied Numonyx branding.
On cover page, revised from “WP pin for write protect of the 4 outermost
parameter blocks and all main blocks” to “WP pin for write protect of the
2 outermost parameter blocks and all main blocks”
In Table 20.: Synchronous burst read AC characteristics, revised tKHQX
(M58BW016FT/B) values from 2 to 3.
8-July-2011
18
In Table 21.: Power supply AC and DC characteristics, revised tVDH
value from 300 to 50
In Table 22.: Reset, power-down and power-up AC characteristics,
added tPLRH.
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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
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相关型号：
M58BW016DT100ZA3FT
512KX32 FLASH 3V PROM, 100ns, PBGA80, 10 X 12 MM, 1 MM PITCH, LBGA-80
STMICROELECTR
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