MT49H16M18 [MICRON]

288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II; 288MB ： X9 ， X18 ， X36 VEXT 2.5V ，1.8V VDD ， HSTL ， CIO ， RLDRAM II

MT49H16M18


型号：	MT49H16M18
厂家：	MICRON TECHNOLOGY
描述：	288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II 288MB ： X9 ， X18 ， X36 VEXT 2.5V ，1.8V VDD ， HSTL ， CIO ， RLDRAM II 动态存储器
文件：	总76页 (文件大小：2663K)
下载：	下载PDF数据表文档文件

MT49H16M18C

288Mb SIO REDUCED LATENCY(RLDRAM II)

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53 MICRON

MT49H16M18CFM-XX

288Mb SIO REDUCED LATENCY(RLDRAM II)

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60 MICRON

MT49H32M9

288Mb CIO Reduced Latency

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63 MICRON

MT49H32M9

288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II

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49 MICRON

MT49H32M9C

288Mb SIO REDUCED LATENCY(RLDRAM II)

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42 MICRON

MT49H32M9CFM-XX

288Mb SIO REDUCED LATENCY(RLDRAM II)

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33 MICRON

MT49H8M32

REDUCED LATENCY DRAM RLDRAM

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39 MICRON

MT49H8M32FM

REDUCED LATENCY DRAM RLDRAM

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36 MICRON

MT49H8M36

288Mb CIO Reduced Latency

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80 MICRON

MT49H8M36

288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II

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58 MICRON

MT4A5

SILICON FAST RECOVERY 3.0 AMP DIODES

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25 EDAL

MT4B5

SILICON FAST RECOVERY 3.0 AMP DIODES

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11 EDAL

MT4C1004J

4 MEG x 1 DRAM FAST PAGE MODE

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26 AUSTIN

MT4C1004J883C

4 MEG x 1 DRAM FAST PAGE MODE

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9 AUSTIN

MT4C1004JC-12/883C

DRAM,

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2 MICROSS

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