RD48F4400P0VBQE [MICRON]

Micron Parallel NOR Flash Embedded Memory (P30-65nm); 美光并行NOR闪存的嵌入式存储器（ P30-65nm ）

RD48F4400P0VBQE


型号：	RD48F4400P0VBQE
厂家：	MICRON TECHNOLOGY
描述：	Micron Parallel NOR Flash Embedded Memory (P30-65nm) 美光并行NOR闪存的嵌入式存储器（ P30-65nm ）闪存存储内存集成电路时钟
文件：	总98页 (文件大小：1366K)
下载：	下载PDF数据表文档文件

RD48F4400P0VBQEA

Flash, 32MX16, PBGA88, 8 X 11 MM, 1 MM HEIGHT, SCSP-88

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0 NUMONYX

RD48F4400P0VBQEJ

256Mb and 512Mb (256Mb/256Mb), P30-65nm

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23 MICRON

RD48F4400P0VTQ0

Intel StrataFlash Embedded Memory

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13 INTEL

RD48F4444LVZTB0

Flash, 64MX16, 88ns, PBGA88, 11 X 11 MM, 1.40 MM HEIGHT, SCSP-88

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0 NUMONYX

RD48F4444PPVBQ0

Intel StrataFlash Embedded Memory

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31 INTEL

RD48F4444PPVTQ0

Intel StrataFlash Embedded Memory

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16 INTEL

RD48F4P0VB00

Intel StrataFlash Embedded Memory

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18 INTEL

RD48F4P0VBQ0

Intel StrataFlash Embedded Memory

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11 INTEL

RD48F4P0VT00

Intel StrataFlash Embedded Memory

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9 INTEL

RD48F4P0VTQ0

Intel StrataFlash Embedded Memory

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17 INTEL

RD48F4P0ZB00

Intel StrataFlash Embedded Memory

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11 INTEL

RD48F4P0ZBQ0

Intel StrataFlash Embedded Memory

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9 INTEL

RD48F4P0ZT00

Intel StrataFlash Embedded Memory

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17 INTEL

RD48F4P0ZTQ0

Intel StrataFlash Embedded Memory

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10 INTEL

RD4R00X

Electric Fuse, Fast Blow, 4A, 32VDC, 35A (IR), Surface Mount,

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0 PANASONIC

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