1N1124AE3 [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 3.3A, 200V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN;
| 型号： | 1N1124AE3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3.3A, 200V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN 二极管 |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY POWER RECTIFIER
Qualified per MIL-PRF-19500/260
• Glass Passivated Die
• Glass to Metal Seal Construction
• 25 Amps Surge Rating • VRRM to 1000 Volts
DEVICES
LEVELS
1N1124A
1N1126A
1N1128A
1N1124RA
1N1126RA
1N1128RA
1N3649
1N3650
1N3649R
1N3650R
JAN
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
1N1124A
1N1124RA
1N1126RA
1N1128RA
1N3649R
200
400
600
Peak Repetitive Reverse Voltage
1N1126A
1N1128A
1N3649
VRWM
V
800
1N3650
1N3650R
1000
Average Forward Current, TC = 150°
IF
3.3
25
A
A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 150°C, T = 1/120s
IFSM
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
2.0
°C/W
°C
Rθjc
TC
-65°C to 150°C
-65°C to 200°C
DO-203AA(DO-4)
Tstg
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Voltage
IF = 10A, Tj = 25°C*
VF
2.2
V
Reverse Current
VR = 200, Tj = 25°C
VR = 400, Tj = 25°C
VR = 600, Tj = 25°C
VR = 800, Tj = 25°C
VR = 1000, Tj = 25°C
1N1124A
1N1126A
1N1128A
1N3649
1N1124RA
1N1126RA
1N1128RA
1N3649R
IR
5
μA
μA
1N3650
1N3650R
Reverse Current
VR = 200, Tj = 150°C
VR = 400, Tj = 150°C
VR = 600, Tj = 150°C
VR = 800, Tj = 150°C
VR = 1000, Tj = 150°C
1N1124A
1N1126A
1N1128A
1N3649
1N1124RA
1N1126RA
1N1128RA
1N3649R
IR
200
1N3650
1N3650R
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
T4-LDS-0135 Rev. 1 (091678)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY POWER RECTIFIER
GRAPHS
FIGURE 1
TYPICAL FORWARD CHARACTERISTICS
FIGURE 2
TYPICAL REVERSE CHARACTERISTICS
T4-LDS-0135 Rev. 1 (091678)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY POWER RECTIFIER
PACKAGE DIMENSIONS
NOTES:
Dimensions
Millimeters
Ltr
Inches
Min
Notes
1. Dimensions are in inches.
Max
Min
Max
2. Millimeters are given for general information only.
3. Units must not be damaged by torque of 15 inch-pounds applied to
10-32NF-2B nut assembled on thread
4. Diameter of unthreaded portion .189 inch (4.80 mm) max and .163
inch (4.14 mm) min.
5. Complete threads to extend to within 2.5 threads of seating plane.
6. Angular orientation of this terminal is undefined.
7. Max pitch diameter of plated threads shall be basic pitch diameter
.169 inch (4.31 mm) reference FED-STD-H28 (Screw Thread
Standards for Federal Services.)
CH
CD
HF
HT
OAH
C
.405
.424
.437
.175
.800
.250
10.29
10.77
11.10
4.44
20.32
6.35
.424
.075
10.77
1.90
9
.060
.422
1.52
φT
SL
K
.453
10.72
11.51
3,5,7
8. The A.S.A. thread reference is 10-32UNF2A.
9. Terminal shape is unrestricted.
10. Reversed (anode to stud) units shall be marked with an R
following the last digit in the type number
11. In accordance with ASME Y14.5M, diameters are equivalent to φx
symbology.
Physical dimensions (DO-203AA, formerly DO-4)
1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A and AR versions, and 1N1124A, 1N1126A,
1N1128A, and RA versions 1N3649, 1N3650, and R versions.
T4-LDS-0135 Rev. 1 (091678)
Page 3 of 3
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