1N3910RE3 [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 50A, 100V V(RRM), Silicon, DO-203AB, DO-5, 1PIN;
| 型号： | 1N3910RE3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 50A, 100V V(RRM), Silicon, DO-203AB, DO-5, 1PIN 快速恢复二极管 |
| 文件： | 总3页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY FAST RECOVERY RECTIFIER
Qualified per MIL-PRF-19500/308
• 150°C Junction Temperature • VRRM 50 to 400 Volts
• 50 Amps Current Rating
DEVICES
LEVELS
JAN
JANTX
JANTXV
1N3909 1N3912
1N3910 1N3913
1N3910A 1N3913A 1N3911R 1N3909AR 1N3912AR
1N3911A 1N3909R 1N3912R 1N3910AR 1N3913AR
1N3911 1N3909A 1N3912A 1N3910R 1N3913R 1N3911AR
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
1N3909 / A / R / AR
Symbol
Value
Unit
50
Peak Reverse Voltage
1N3910 / A / R / AR
1N3911 / A / R / AR
1N3912 / A / R / AR
1N3913 / A / R / AR
100
200
300
400
VRWM
V
1N3909 / A / R / AR
1N3910 / A / R / AR
1N3911 / A / R / AR
1N3912 / A / R / AR
1N3913 / A / R / AR
50
100
200
300
400
Peak Working Reverse Voltage
VRRM
V
Average Forward Current, TC = 100°
Peak Surge Forward Current @
IF
50
A
A
1N3909 / R Thru 1N3913 / R
300
400
IFSM
8.3ms, half sinewave, TC = 100°C 1N3909A / AR Thru 1N3913A / AR
DO-203AB (DO-5)
Thermal Resistance, Junction to Case
0.8
°C/W
°C
RθJC
Tj
Operating Case Temperature Range
-65°C to 150°C
-65°C to 175°C
Storage Temperature Range
TSTG
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol
Min.
Max.
1.4
Unit
V
Forward Voltage
VFM
VFM
IFM = 50A, TC = 25°C*
Forward Voltage
2.75
V
IFM = 400A, TC = 150°C**
Reverse Current
VRM = 50V, TC = 25°C
VRM = 100V, TC = 25°C
1N3909 / A / R
1N3910 / A / R
1N3911 / A / R
1N3912 / A / R
1N3913 / A / R
V
RM = 200V, TC = 25°C
VRM = 300V, TC = 25°C
RM = 400V, TC= 25°C
IRM
15
μA
V
Reverse Current
VRM = 50V, TC = 150°C
1N3909 / A / R
1N3910 / A / R
1N3911 / A / R
1N3912 / A / R
1N3913 / A / R
V
RM = 100V, TC = 150°C
VRM = 200V, TC = 150°C
RM = 300V, TC = 150°C
IRM
6
mA
ns
V
VRM = 400V, TC = 150°C
Reverse Recovery Time
VRM = 30V, IF = 1A
1N3909 / A Thru 1N3913 / A
1N3909A / AR Thru 1N3913A / AR
200
150
Trr
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
** Pulse test: Pulse width 800 µsec
T4-LDS-0144 Rev. 1 (091810)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY FAST RECOVERY RECTIFIER
GRAPHS
FIGURE 1
FIGURE 3
TYPICAL FORWARD CHARACTERISTICS
TYPICAL JUNCTION CAPACITANCE
FIGURE 4
FORWARD CURRENT DERATING
FIGURE 2
TYPICAL REVERSE CHARACTERISTICS
T4-LDS-0144 Rev. 1 (091810)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY FAST RECOVERY RECTIFIER
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
Dimensions
Millimeters
Ltr
Inches
Max
0.030
0.250
Min
Min
0.76
6.35
Max
2.03
9.52
2. Metric equivalents are given for general information only.
3. Units must not be damaged by torque of 30 inch-pounds applied to
0.250-28 UF-2B nut assembled on thread.
4. Diameter of unthreaded portion 0.249 inch (6.32 mm) max and 0.220
inch (5.59 mm) minimum.
5. Complete threads to extend to within 2.5 threads of seating plane.
6. Angular orientation for this terminal is underlined, however the major
surfaces over dimension CD shall be flat and the minimum distance
from the hole to any point on the periphery shall be 0.030 inch
(0.76mm) outside dimension J.
7. Max pitch diameter of plated threads shall be basic pitch diameter
0.2268 inch (5.76 mm) reference FED-STD-H28.
8. (Screw Thread Standards for Federal Services.)
9. A chamfer or undercut on one or both ends of the hex portion is
optional: Minimum bas diameter at seating plane.
C
CD
CD1
0.080
0.375
0.667
16.94
CH
HF
HT
HT1
J
0.450
0.688
0.200
11.43
17.48
5.08
0.669
0.115
0.060
0.156
0.030
16.99
2.93
1.53
3.97
0.77
M
OAH 0.750
φT
SL
1.000
0.175
0.453
19.05
3.56
10.72
25.40
04.44
11.50
0.140
0.422
.250-28 UNF-2A
THD NF optional
6.35-28 UNF-2A
THD NF optional
SP
0.600 inch (15.24 mm)
10. Reversed (anode to stud) units shall be marked with an “R”
following the last digit in the type number.
Physical dimensions (DO-5)
T4-LDS-0144 Rev. 1 (091810)
Page 3 of 3
相关型号：
1N3910RS
Rectifier Diode, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, DO-5, HERMETICALLY SEALED, 1 PIN
SSDI
1N3910RTX
Rectifier Diode, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, DO-5, HERMETICALLY SEALED, 1 PIN
SSDI
1N3910TXV
Rectifier Diode, 1 Phase, 1 Element, 30A, 100V V(RRM), Silicon, DO-5, HERMETICALLY SEALED, 1 PIN
SSDI
©2020 ICPDF网 联系我们和版权申明