1N5558E3 [MICROSEMI]
Trans Voltage Suppressor Diode, 1500W, 175V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN;
| 型号： | 1N5558E3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 1500W, 175V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN |
| 文件： | 总5页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPESSOR
Qualified per MIL-PRF-19500/500
DEVICES
LEVELS
JAN
JANTX
JANTXV
1N5555
1N5557
1N5556
1N5558
DESCRIPTION
This Transient Voltage Suppressor (TVS) series for 1N5555 thru 1N5558 are JEDEC
registered selections for unidirectional devices. All have the same high Peak Pulse
Power rating of 1500 W with extremely fast response times. They are also available in
military qualified selections as described in the Features section herein. They are most
often used for protecting against transients from inductive switching environments,
induced RF effects, or induced secondary lightning effects as found in lower surge levels
of IEC61000-4-5. They are also very successful in protecting airborne avionics and
electrical systems. Since their response time is virtually instantaneous, they can also
protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
IMPORTANT: For the most current data, consult MICROSEMI’s website:
http://www.microsemi.com
FEATURES
DO-13 (DO-202AA)
¾ Unidirectional TVS series for thru-hole mounting
¾ Working voltage (VWM) range 30.5 V to 175 V
¾ Hermetic sealed DO-13 metal package
¾ JAN/TX/TXV military qualifications also available per MIL-PRF-19500/500 by
adding the JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N5555, etc.
¾ For bidirectional TVS in the same DO-13 package, see separate data sheet for the
1N6036 – 1N6072A series (also military qualified)
¾ Surface mount equivalent packages also available from the SMCJ5.0 -
SMCJ170CA or SMCG5.0 – SMCG170C series in separate data sheet (consult
factory for other surface mount options)
¾ Plastic axial-leaded equivalents available from the 1N6267 – 1N6303A series in
separate data sheet
T4-LDS-0094 Rev. 2 (101572)
Page 1 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
APPLICATIONS / BENEFITS
¾ Suppresses transients up to 1500 watts @ 10/1000 µs (see Figure 1)
¾ Clamps transient in less than 100 pico seconds
¾ Protection from switching transients and induced RF
¾ Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
¾ Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: 1N5555 to 1N5558
Class 2 & 3: 1N5555 to 1N5557
Class 4: 1N5555 to 1N5556
¾ Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
Class 1: 1N5555 to 1N5557
Class 2: 1N5555 to 1N5557
¾ Inherently radiation hard as described in Microsemi MicroNote 050
MAXIMUM RATINGS
¾ 1500 Watts for 10/1000 μs with repetition rate of 0.01% or less* at lead temperature (TL) 25oC (see Figs 1, 2, & 4)
¾ Operating & Storage Temperatures: -65o to +175oC
¾ THERMAL RESISTANCE: 50oC/W junction to lead at 0.375 inches (10 mm) from body or 110oC/W junction to
ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz) and track width 1 mm, length 25 mm
¾ DC Power Dissipation*: 1 Watt at TL = +25oC 3/8” (10 mm) from body (see derating in Fig 3)
¾ Forward surge current: 200 Amps for 8.3ms half-sine wave at TA = +25oC
¾ Solder Temperatures: 260 o C for 10 s (maximum)
MECHANICAL AND PACKAGING
¾ CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass
¾ FINISH: All external metal surfaces are Tin-Lead plated and solderable per MIL-STD-750 method 2026
¾ POLARITY: Cathode connected to case and polarity indicated by diode symbol
¾ MARKING: Part number and polarity diode symbol
¾ WEIGHT: 1.4 grams. (Approx)
¾ TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
¾ See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated
standoff voltage
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).
T4-LDS-0094 Rev. 2 (101572)
Page 2 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS
Minimum
Breakdown Current Standoff
Voltage
V(BR) @ I(BR)
Test
Rated
Maximum
(RMS)
Reverse
Voltage
VWM(RMS)
Maximum
Standby
Current
Maximum
Peak
Reverse
Voltage
VC @ IPP
Maximum
Peak Pulse
Current
IPP
Maximum
Temperature
Coefficient of
V(BR) αV(BR)
@ 1.0 mA
JEDEC
Type
Number
(Notes 1&2)
I(BR)
Voltage
VWM
ID @ VWM
V
mA
V
V
V
A
%/oC
μA
1N5555
1N5556
1N5557
1N5558
33.0
43.7
54.0
1.0
1.0
1.0
1.0
30.5
40.3
49.0
21.5
28.5
34.5
5
5
5
5
47.5
63.5
78.5
32
24
19
5.7
+.093
+.094
+.096
+.100
191.0
175.0
124.0
265.0
NOTE 1: A TVS is normally selected according to the rated “Standoff Voltage” VWM that should be equal to or
greater than the dc or continuous peak operating voltage level.
NOTE 2: Also available in military qualified types with a JAN, JANTX, or JANTXV prefix.
SYMBOLS & DEFINITIONS
Symbol
Definition
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1
above.)
VWM
V(BR)
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25oC
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when
subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is the
combination of voltage rise due to both the series resistance and thermal rise and positive
VC
temperature coefficient (αV(BR)
)
IPP
PPP
ID
Peak Pulse Current: The peak current during the impulse (See Figure 2)
Peak Pulse Power: The pulse power as determined by the product of VC and IPP
Standby Current: The current at the standoff voltage (VWM
)
I(BR)
Breakdown Current: The current used for measuring Breakdown Voltage (V(BR)
)
T4-LDS-0094 Rev. 2 (101572)
Page 3 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
GRAPHS
100
xponential wave-form
eeFIG. 2)
10
quare-wavepulse
Peak Value
IPP
Pulse time duration (tp) is
defined as that point
where IP decays to 50% of
peak value (IPP).
1.0
0.1Kw
100ns
1μs
10μs
100μs
1ms
10ms
Pulse Time (tp )
FIG. 1 – Non-repetitive peak pulse power rating curve
Time (t) in milliseconds
FIG. 2 Pulse wave form for exponential surge
NOTE: Peak power defined as peak voltage times peak current
TL – lead Temperature
FIG. 3 Steady-state power derating curve
TA Ambient Temperature oC
FIG. 4 Derating Curve
T4-LDS-0094 Rev. 2 (101572)
Page 4 of 5
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
Dimensions
Inches Millimeters Notes
Min
2. Millimeters are given for general information only.
3. The major diameter is essentially constant along its length.
4. Within this zone, diameter may vary to allow for lead finishes
and irregularities.
5. Dimension to allow for pinch or seal deformation anywhere
along tubulation.
6. Lead 1 (cathode) shall be electrically connected to the case.
7. In accordance with ASME Y14.5M, diameters are equivalent
to φx symbology.
Symbol
Max
.235
.357
.570
.100
.035
Min
5.46
7.44
Max
5.97
9.07
14.48
2.54
0.89
BD
BL
BLT
CD
LD
LL
.215
.293
3
5
.045
.025
1.14
0.64
1.000 1.625 25.40 41.28
.188 4.78
4
4
LU
FIGURE 1. Physical dimensions (DO-13).
T4-LDS-0094 Rev. 2 (101572)
Page 5 of 5
相关型号：
©2020 ICPDF网 联系我们和版权申明