1N6305RE3 [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 70A, 100V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN;
| 型号： | 1N6305RE3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 70A, 100V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN |
| 文件： | 总3页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY ULTRA FAST RECOVERY RECTIFIER
Qualified per MIL-PRF-19500/550
• 800 Amps Surge Rating
• VRRM 50 to 150 Volts
• 70 Amps Current Rating
DEVICES
LEVELS
JAN
JANTX
JANTXV
1N6304
1N6305
1N6306
1N6304R
1N6305R
1N6306R
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
VRWM
Value
Unit
1N6304 / R
50
100
150
Peak Repetitive Reverse Voltage
1N6305 / R
1N6306 / R
V
1N6304 / R
1N6305 / R
1N6306 / R
50
100
150
Peak Working Reverse Voltage
VRRM
V
Average Forward Current, TC = 100°
IF
70
800
A
A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave, TC = 55°C
Thermal Resistance, Junction to Case
IFSM
RθJC
TJ
0.8
°C/W
°C
Operating Junction Temperature Range
-65°C to 175°C
-65°C to 175°C
DO-203AB (DO-5)
Storage Temperature Range
Tstg
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Voltage
IFM = 70A, TC = 25°C*
VFM
VFM
VFM
0.975
V
Forward Voltage
IFM = 150A, TC = 25°C*
1.18
0.84
V
V
Forward Voltage
IFM = 70A, TC = 150°C*
Reverse Current
VRM = 50V, TC = 25°C
VRM = 100V, TC = 25°C
1N6304 / R
1N6305 / R
1N6306 / R
IRM
25
30
μA
VRM = 150V, TC= 25°C
Reverse Current
VRM = 50V, TC = 150°C
1N6304 / R
1N6305 / R
1N6306 / R
IRM
mA
VRM = 100V, TC = 150°C
VRM = 150V, TC = 150°C
Reverse Recovery Time
IF = 0.5A, IR = 1A
Trr
Trr
CJ
50
60
ns
ns
pF
Reverse Recovery Time
IF = 70A
Capacitance Junction
VR = 10V, f = 1MHz, TJ = 25°C
600
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
T4-LDS-0146 Rev. 1 (091812)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY ULTRA FAST RECOVERY RECTIFIER
GRAPHS
FIGURE 1
FIGURE 3
TYPICAL FORWARD CHARACTERISTICS
TYPICAL JUNCTION CAPACITANCE
FIGURE 4
FORWARD CURRENT DERATING
FIGURE 2
TYPICAL REVERSE CHARACTERISTICS
T4-LDS-0146 Rev. 1 (091812)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY ULTRA FAST RECOVERY RECTIFIER
PACKAGE DIMENSIONS
NOTES:
Dimensions
Inches Millimeters
1
2
3
Dimensions are in inches.
Ltr
Notes
Millimeter equivalents are given for information only.
Units must not be damaged by torque of 30 inch-pound applied
to .25-28 UNF-2B nut assembled on thread.
Length of incomplete or undercut threads of UD.
Maximum pitch diameter of plated threads shall be basic pitch
diameter .2268 inch (5.761 mm).
Min
Max
Min
Max
9.53
2.03
CD
C
.375
.080
7
4
5
HF
HT
CH
.669
.115
.688 16.99 17.48
6
A chamfer or undercut on one or both ends of the hex portion is
optional; minimum base diameter at seating plane .60 inch (15.2
mm).
.200
.450
2.92
5.08
11.43
7
8
9
The angular orientation and peripheral configuration of terminal
1 is undefined.
Standard types shall have cathode connected to stud. Reverse
types shall have anode connected to stud.
1.00
0
OAH
.750
.422
19.05 25.40
SL
SU
CD1
SD
UD
θT
.453 10.72 11.51
Term 2 threads in accordance with FED-STD-H28.
.090
.667
2.29
4
5
10 In accordance with ASME Y14.5M, diameters are
16.94
equivalent to φx symbology.
.220
.249
5.59
6.32
.140
.175
3.56
4.45
Physical dimensions (DO-203AB)
T4-LDS-0146 Rev. 1 (091812)
Page 3 of 3
相关型号：
1N6306E3
Rectifier Diode, 1 Phase, 1 Element, 70A, 150V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN
MICROSEMI
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