1N6364E3TR [MICROSEMI]
Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, ROHS COMPLIANT, HERMETIC SEALED, METAL, DO-13, 2 PIN;型号: | 1N6364E3TR |
厂家: | Microsemi |
描述: | Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, ROHS COMPLIANT, HERMETIC SEALED, METAL, DO-13, 2 PIN 局域网 二极管 |
文件: | 总3页 (文件大小:165K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are
JEDEC registered selections for both unidirectional and bidirectional devices.
The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are
bi-directional where they all provide a very low specified clamping factor for
minimal clamping voltages (VC) above their respective breakdown voltages
(VBR) as specified herein. They are most often used in protecting sensitive
components from inductive switching transients or induced secondary
lightning effects as found in lower surge levels of IEC61000-4-5 . They are
also very successful in protecting airborne avionics and electrical systems.
Since their response time is virtually instantaneous, they can also protect
DO-13
(DO-202AA)
from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Unidirectional and bidirectional TVS series for thru-hole
mounting
• Designed to protect Bipolar and MOS Microprocessor
based systems.
•
•
Suppresses transients up to 1500 watts @ 10/1000 µs
• Protection from switching transients and induced RF
• ESD and EFT protection per IEC 61000-4-2 and -4-4
t
clamping (0 volts to V(BR) min):
Unidirectional – Less than 100 pico seconds.
Bidirectional – Less than 5 nano seconds.
• Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
•
•
Working voltage (VWM) range 5 V to 45 V
Class 1, 2 & 3 1N6356 to 1N6372
Class 4: 1N6356 to 1N6362
Low clamping factor (ratio of actual VC/VBR): 1.33 @
full rated power and 1.20 @ 50% rated power
• Secondary lightning protection per IEC61000-4-5 with
•
•
Hermetic sealed DO-13 metal package
12 Ohms source impedance:
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, JANTXV, and JANS are also available
by adding MQ, MX, MV, SP prefixes respectively to part
numbers, e.g. MX1N6356, etc.
Class 1 & 2: 1N6356 to 1N6372
Class 3: 1N6356 to 1N6362
Class 4: 1N6356 to 1N6358
• Secondary lightning protection per IEC61000-4-5 with
•
•
RoHS Compliant devices available by adding “e3” suffix
2 Ohms source impedance:
Surface mount equivalent packages also available as
SMCJ6356 – SMCJ6372 (consult factory for other
surface mount options)
Class 2: 1N6356 to 1N6361
Class 3: 1N6356 to 1N6358
• Inherently radiation hard per Microsemi MicroNote
•
Plastic axial-leaded equivalents available in the
1N6373 – 1N6389 series (see separate data sheet)
050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
1500 Watts for 10/1000 μs with repetition rate of 0.01% or
•
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
less* at lead temperature (TL) 25oC (See Figs. 1, 2, & 4)
•
•
Operating & Storage Temperatures: -65o to +175oC
•
•
FINISH: All external metal surfaces are Tin-Lead or
RoHS Compliant annealed matte-Tin plating
solderable per MIL-STD-750 method 2026
THERMAL RESISTANCE: 50oC/W junction to lead at
0.375 inches (10 mm) from body or 110 oC/W junction to
ambient when mounted on FR4 PC board with 4 mm2
copper pads (1 oz) and track width 1 mm, length 25 mm
POLARITY: Cathode connected to case and
polarity indicated by diode symbol
DC Power Dissipation*: 1 Watt at TL < +125oC 3/8” or 10
mm from body (also see Figure 5)
•
•
•
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
•
•
•
Forward surge current: 200 Amps for 8.3ms half-sine
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
wave at TA = +25oC for unidirectional only (1N6356-6364)
Solder Temperatures: 260 o C for 10 s (maximum)
•
See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).
Copyright © 2007
Microsemi
Page 1
10-03-2007 REV C
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC (Unidirectional)
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
VOLTS
7.5
11.5
14.1
MAXIMUM
REVERSE
LEAKAGE
@VWM
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V(BR) (min)
VOLTS
6.0
STAND-OFF
VOLTAGE
(NOTE 1)
VWM
MAXIMUM
PEAK PULSE
CURRENT
I
PP1 = 1A
VC
ID
μA
300
25
2
MICROSEMI
IPP3
A
160
100
90
70
60
50
40
PART NUMBER
VOLTS
VOLTS
7.1
1N6356
MPT-5
5.0
1N6357
1N6358
1N6359
1N6360
1N6361
1N6362
1N6363
1N6364
MPT-8
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
9.4
11.7
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
MPT-10
MPT-12
MPT-15
MPT-18
MPT-22
MPT-36
MPT-45
2
14.1
16.5
20.6
25.2
32.0
54.3
70.0
2
17.6
2
21.2
2
25.9
2
42.4
23
19
2
52.9
VF at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave.
ELECTRICAL CHARACTERISTICS @ 25oC (Bidirectional)
MPT-5C
5.0
300
25
2
6.0
7.1
7.5
160
100
90
70
60
50
40
23
19
1N6365
1N6366
1N6367
1N6368
1N6369
1N6370
1N6371
1N6372
MPT-8C
8.0
9.4
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
MPT-10C
MPT-12C
MPT-15C
MPT-18C
MPT-22C
MPT-36C
MPT-45C
10.0
12.0
15.0
18.0
22.0
36.0
45.0
11.7
14.1
17.6
21.2
25.9
42.4
52.9
2
2
2
2
2
2
C Suffix indicates Bidirectional
NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the DC or
continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
GRAPHS
FIGURE 1
FIGURE 2
Peak Pulse Power vs. Pulse Time
Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
Copyright © 2007
10-03-2007 REV C
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6356 thru 1N6372, e3
or MPT-5 thru MPT-45C, e3
1500 W LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
Peak Value
IPP
Pulse time duration (tp) is
defined as that point where
I
P decays to 50% of peak
value (IPP).
time (t) in milliseconds
FIGURE 4
FIGURE 3
Pulse wave form for exponential surge
Typical Capacitance vs. Breakdown Voltage
(Unidirectional Types)
PACKAGE DIMENSIONS
FIGURE 5
Typical Capacitance vs. Breakdown Voltage
(Bidirectional Types)
TL – lead Temperature oC
FIG. 5 Steady-state power derating curve
Copyright © 2007
10-03-2007 REV C
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Unidirectional, 1 Element, Silicon, DO-13
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1N6364TR
Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN
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Transient Voltage Suppressor, Bi-directional; Max Peak Repetitive Reverse Voltage: 1500; Max TMS Bridge Input Voltage: 8; Max DC Reverse Voltage: 25; Sn/Pb - Pb-free
DIGITRON
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