1N6465E3 [MICROSEMI]
Trans Voltage Suppressor Diode, 500W, 24V V(RWM), Unidirectional, 1 Element, Silicon,;
| 型号： | 1N6465E3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, 局域网 二极管 |
| 文件： | 总6页 (文件大小：508K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6461 – 1N6468
Qualified Levels:
JAN, JANTX, and
JANTXV
Voidless Hermetically Sealed Unidirectional
Available on
commercial
versions
Transient Voltage Suppressors
Qualified per MIL-PRF-19500/551
DESCRIPTION
This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors
(TVS) are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications
where a failure cannot be tolerated. Working peak “standoff” voltages are available from 5.0 to
51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical
bonds. These devices are also available in a surface mount MELF package configuration.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
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Popular JEDEC registered 1N6461 thru 1N6468 series.
Available as 500 W peak pulse power (PPP).
Working peak “standoff” voltage (VWM) from 5.0 to 51.6 V.
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
Triple-layer passivation.
“B” Package
Internal “Category 1” metallurgical bonds.
Voidless hermetically sealed glass package.
JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in
reference to MIL-PRF-19500 is also available.
Also available in:
(See part nomenclature for all available options.)
“B” SQ-MELF
Package
(surface mount)
•
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
1N6461US - 1N6468US
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Military and other high-reliability transient protection.
Extremely robust construction.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
Protection from secondary effects of lightning per select levels in IEC61000-4-5.
Flexible axial-leaded mounting terminals.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS @ 25 ºC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Parameters/Test Conditions
Symbol
TJ and TSTG
RӨJL
Value
-55 to +175
60
Unit
oC
Junction and Storage Temperature
Thermal Resistance, Junction to Lead (1)
Forward Surge Current @ 8.3 ms half-sine
Forward Voltage @ 1 Amp
ºC/W
A
IFSM
80
Fax: (978) 689-0803
VF
1.5
V
MSC – Ireland
PPP
500
W
Peak Pulse Power @ 10/1000 µs
Reverse Power Dissipation (2)
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
PR
2.5
W
oC
Solder Temperature @ 10 s
260
Notes: 1. At L = 0.375 inch (9.53 mm) from body.
2. Derate at 16.7 mW/oC (see figure 4).
Website:
www.microsemi.com
T4-LDS-0286, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 1 of 6
1N6461 – 1N6468
MECHANICAL and PACKAGING
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
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•
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TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available for commercial grade only.
MARKING: Body paint and part number.
POLARITY: Cathode band.
TAPE & REEL option: Standard per EIA-296. Contact factory for quantities.
WEIGHT: Approximately 750 milligrams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
1N6461
e3
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
CDS (reference JANS)
Blank = commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
See Electrical Characteristics
table
SYMBOLS & DEFINITIONS
Definition
Symbol
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature expressed in %/°C or mV/°C.
αV(BR)
V(BR)
VWM
ID
Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.
Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage
that may be continuously applied over the standard operating temperature.
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
IPP
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
VC
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of IPP and VC.
PPP
T4-LDS-0286, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 2 of 6
1N6461 – 1N6468
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAK
DOWN
VOLTAGE
V(BR)
BREAKDOWN
CURRENT
I (BR)
RATED
WORKING
STANDOFF
VOLTAGE
VWM
MAXIMUM
STANDBY
CURRENT
ID
MAXIMUM
CLAMPING
VOLTAGE
VC
MAXIMUM
MAXIMUM
TEMP. COEF.
OF
PEAK IMPULSE
CURRENT
IPP
αV(BR)
TYPE
@ VWM
@ 10/1000 µs
@ I(BR)
@ 8/20
µs
@ 10/1000
µs
Volts
5.6
mA
25
20
5
V (pk)
5
V (pk)
9.0
A (pk)
315
258
125
107
69
A (pk)
56
46
22
19
12
11
8
%/oC
-0.03, +0.045
+0.060
µA
3000
2500
500
500
50
1N6461
1N6462
1N6463
1N6464
1N6465
1N6466
1N6467
1N6468
6.5
6
11.0
22.6
26.5
41.4
47.5
63.5
78.5
13.6
16.4
27.0
33.0
43.7
54.0
12
+0.085
5
15
+0.085
2
24
+0.096
1
30.5
40.3
51.6
3
63
+0.098
1
2
45
+0.101
1
2
35
6
+0.103
T4-LDS-0286, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 3 of 6
1N6461 – 1N6468
GRAPHS
Pulse Time (tp)
FIGURE 1
Peak Pulse Power vs Pulse Time
Time (t) in Milliseconds
FIGURE 2
10/1000 µs Current Impulse Waveform
T4-LDS-0286, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 4 of 6
1N6461 – 1N6468
GRAPHS
Time (t) in Microseconds
FIGURE 3
8/20 µs Current Impulse Waveform
T – Temperature - °C
FIGURE 4
Derating Curve
T4-LDS-0286, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 5 of 6
1N6461 – 1N6468
PACKAGE DIMENSIONS
Dimensions
Inches Millimeters
Min Max
0.115 0.145 2.92
0.150 0.300 3.81
0.037 0.042 0.94
Symbol
Notes
Min
Max
3.68
7.62
1.07
BD
BL
LD
LL
L1
3,4
4
4
0.900 1.30 22.86 33.02
0.050 1.27
4
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for information only.
3. Dimension BD shall be measured at the largest diameter.
4. Dimension BL includes dimension L1 region in which the diameter may vary from BD maximum to LD minimum.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0286, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 6 of 6
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