1N6469E3 [MICROSEMI]

Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2;
1N6469E3
型号: 1N6469E3
厂家: Microsemi    Microsemi
描述:

Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

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1N6469 thru 1N6476  
Voidless-Hermetically-Sealed Unidirectional  
Transient Suppressors  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This series of industry recognized voidless-hermetically-sealed Unidirectional  
Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-  
19500/552 and are ideal for high-reliability applications where a failure cannot be  
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6  
Volts with 1500 W ratings. They are very robust in hard-glass construction and also  
use an internal metallurgical bond identified as Category I for high reliability  
applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These  
devices are also available in a surface mount MELF package configuration by adding  
a “US” suffix (see separate data sheet for 1N6469US thru 1N6476AUS). Microsemi  
also offers numerous other TVS products to meet higher and lower peak pulse power  
and voltage ratings in both through-hole and surface-mount packages.  
“G” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
High surge current and peak pulse power provides  
Military and other high reliability transient protection  
Extremely robust construction  
transient voltage protection for sensitive circuits  
Triple-layer passivation  
Internal “Category I” metallurgical bonds  
Voidless hermetically sealed glass package  
JAN/TX/TXV military qualifications available per MIL-  
PRF-19500/552 by adding JAN, JANTX, or JANTXV  
prefix  
Further options for screening in accordance with MIL-  
PRF-19500 for JANS by using a “MSP” prefix, e.g.  
MSP6469, MSP6476, etc.  
Working Peak “Standoff” Voltage (VWM) from 5.0 to  
51.6 V  
Available as 1500 W Peak Pulse Power (PPP)  
ESD and EFT protection per IEC61000-4-2 and  
IEC61000-4-4 respectively  
Secondary lightning protection per select levels in  
IEC61000-4-5  
Flexible axial-leaded mounting terminals  
Nonsensitive to ESD per MIL-STD-750 Method  
Surface Mount equivalents are also available in a  
square-end-cap MELF configuration with a “US” suffix  
(see separate data sheet)  
1020  
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Operating & Storage Temperature: -55oC to +175oC  
CASE: Hermetically sealed voidless hard glass  
Peak Pulse Power at 25oC: 1500 Watts @ 10/1000 µs  
(also see Figures 1,2 and 4)  
Impulse repetition rate (duty factor): 0.01%  
with Tungsten slugs  
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)  
over copper  
MARKING: Body painted and part number, etc.  
POLARITY: Cathode band  
Tape & Reel option: Standard per EIA-296  
Weight: 1270 mg  
See package dimensions on last page  
Forward Surge Current: 130 Amps@ 8.33 ms one-half  
sine wave  
Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at  
100 Amps (pulsed)  
Steady-State Power: 3.0 W @ TA = 25oC (see note  
below and Figure 4)  
Thermal Resistance @ 3/8 inch lead length: 50.0 oC/W  
Solder Temperatures: 260oC for 10 s (maximum)  
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from  
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.  
Copyright 2004  
11-01-2004 REV A  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N6469 thru 1N6476  
Voidless-Hermetically-Sealed Unidirectional  
Transient Suppressors  
S C O T T S D A L E D I V I S I O N  
ELECTRICAL CHARACTERISTICS  
MAXIMUM  
CLAMPING  
VOLTAGE  
VC  
MAXIMUM  
PEAK PULSE  
CURRENT  
IPP  
BREAKDOWN  
MAXIMUM  
TEMP.  
BREAK  
DOWN  
VOLTAGE  
V(BR)  
MIN.  
WORKING  
MAX  
LEAKAGE  
CURRENT  
ID  
CURRENT  
PEAK  
VOLTAGE  
VWM  
I
TYPE  
COEF. OF  
V(BR)  
(BR)  
@ 10/1000 µs  
@8/20 µs  
@10/1000 µs  
Volts  
5.6  
mAdc  
50  
50  
10  
10  
5
Vdc  
5
V(pk)  
9.0  
A(pk)  
945  
775  
374  
322  
207  
181  
135  
107  
A(pk)  
167  
137  
66  
%/oC  
-.03, +0.04  
0.06  
µAdc  
500  
100  
20  
10  
5
1N6469  
1N6470  
1N6471  
1N6472  
1N6473  
1N6474  
1N6475  
1N6476  
6.5  
6
11.0  
22.6  
26.5  
41.4  
47.5  
63.5  
78.5  
13.6  
12  
0.085  
0.085  
.096  
16.4  
15  
57  
27.0  
24  
36.5  
32  
33.0  
1
30.5  
40.3  
51.6  
5
.098  
43.7  
1
5
24  
.101  
54.0  
1
5
19  
.103  
SYMBOLS & DEFINITIONS  
Symbol  
Definition  
VBR  
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.  
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.  
This is also referred to as Standoff Voltage.  
VWM  
ID  
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.  
Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.  
VC  
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP  
.
PPP  
GRAPHS  
Peak Value  
IPP  
Pulse time duration (tp) is  
defined as that point where  
I
P decays to 50% of peak  
value (IPP).  
time (t) in milliseconds  
FIG. 1 – Non-repetive peak pulse power rating curve  
NOTE: Peak power defined as peak voltage times peak current  
FIG. 2 Pulse wave form for exponential surge  
for 10/1000 µs  
Copyright 2004  
11-01-2004 REV A  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N6469 thru 1N6476  
Voidless-Hermetically-Sealed Unidirectional  
Transient Suppressors  
S C O T T S D A L E D I V I S I O N  
FIGURE 3  
T – Temperature – oC  
8/20 µs CURRENT IMPULSE WAVEFORM  
FIGURE 4  
DERATING CURVE  
PACKAGE DIMENSIONS Inches [mm]  
PACKAGE G  
Note: Package G lead dimension diameter is 0.040 inch nominal with –.003 +.002 inch tolerance  
Copyright 2004  
11-01-2004 REV A  
Microsemi  
Scottsdale Division  
Page 3  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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