1N648-1E3 [MICROSEMI]
Rectifier Diode, 1 Element, 0.4A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | 1N648-1E3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, 0.4A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 二极管 |
| 文件： | 总1页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FEATURES
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1N648-1
SILICON RECTIFIER
METALLURGICALLY BONDED
HERMETICALLY SEALED
DOUBLE PLUG CONSTRUCTION
1N648-1
MAXIMUM RATINGS AT 25 °C
Operating Temperature:
Storage Temperature:
Surge Current A, sine 8.3mS:
Total Power Dissipation:
Operating Current:
-65°C to +175°C
-65°C to +175°C
5.0A
500mW
400mA, TA= +25°C
Operating Current:
Derating Factor:
150mA, TA= +150°C
2mA/°C above +25°C
Derating Factor:
D.C. Reverse Voltage (VRWM):
6mA/°C above +150°C
500V
DC ELECTRICAL CHARACTERISTICS
VF
IR
Ambient
(°C)
Ambient
(°C)
IF
mA
Min
V
Max
V
VR
V (dc)
Min
µA
Max
µA
25
400
0.80
1.00
25
25
500
600
-
-
0.050
50
DESIGN DATA
Case: Hermetically sealed glass package
Lead Material: Copper clad steel
Lead Finish: Tin/Lead
AC ELECTRICAL CHARACTERISTICS AT 25°C
Symbol
Min
Max
Capacitance @ VR = 4V
pF
-
20
Marking: Blue body coat, Black digits.
Polarity: Cathode end is banded.
IRELAND - GORT ROAD, ENNIS, CO. CLARE
PHONE:
TOLL FREE:
FAX:
+353 65 6840044
+186 62 702434
+353 65 6822298
WWW.MICROSEMI.COM
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PHONE:
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