1N6510_1 [MICROSEMI]
Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options; 与HiRel它MQ ， MX ， MV ，而MSP筛选选项隔离二极管阵列
| 型号： | 1N6510_1 |
| 厂家： | 
Microsemi |
| 描述： | Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options |
| 文件： | 总2页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6510
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing
them either to the positive side of the power supply line or to ground (see figure 1). An
external TVS diode may be added between the positive supply line and ground to
prevent over-voltage on the supply rail. They may also be used in fast switching core-
driver applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding
or encoding applications. These arrays offer many advantages of integrated circuits
such as high-density packaging and improved reliability. This is a result of fewer pick
and place operations, smaller footprint, smaller weight, and elimination of various
discrete packages that may not be as user friendly in PC board mounting.
16-PIN Ceramic
Flat Pack
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
•
•
•
•
•
•
•
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 75 V at 5 µA
Low Leakage IR< 100nA at 40 V
Low Capacitance Ct < 4.0 pF
Switching Speeds less than 10 ns
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6510 for a JANTX screen.
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (See Circuit in Figure
1)
61000-4-2 (ESD): Air 15 kV, contact – 8 kV
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A, 8/20 µs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
16-PIN Ceramic Flat Pack
•
•
•
•
•
•
•
Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25oC
500 mW Power Dissipation per Package @ 25oC (Note 4)
Operating Junction Temperature range –65 to +150oC
Storage Temperature range of –65 to +200oC
Weight 0.5 grams (approximate)
Marking: Logo, part number, date code and dot
identifying pin #1
•
Carrier Tubes; 19 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max.; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.0 mW/oC above +25oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
CAPACITANCE
(PIN TO PIN)
MAXIMUM
FORWARD
RECOVERY
TIME
MAXIMUM
FORWARD
VOLTAGE
MATCH
MAXIMUM
REVERSE
CURRENT
MAXIMUM
REVERSE
CURRENT
REVERSE
RECOVERY TIME
t
rr
@
I = IR = 10 mA
F
V
Ct
F1
t
fr
i
= 1 mA
V
F5
rr
I = 100 mA
I
I
V
= 0 V;
F
R1
R2
R
I = 100 mA
R = 100 ohms
I = 10 mA
(Note 1)
VR = 40 V
µA
VR = 20 V
nA
F = 1 MHz
pF
F
L
F
PART
NUMBER
V
1
ns
15
ns
10
mV
5
1N6510
0.1
25
4.0
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright 2003
Microsemi
Page 1
5-03-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6510
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
VBR
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VF
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
IR
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
Ct
SCHEMATIC
PACKAGE DIMENSIONS
SCHEMATIC
Supply rail (+VCC)
I/O Port
GND (or -VCC)
Steering Diode Application
FIGURE 1
Copyright 2003
5-03-2004 REV A
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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