1N6675E3 [MICROSEMI]
Rectifier Diode, Schottky, 1 Element, 0.2A, 20V V(RRM), Silicon, DO-35, HERMETIC SEALED, DO-35, 2 PIN;
| 型号： | 1N6675E3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Schottky, 1 Element, 0.2A, 20V V(RRM), Silicon, DO-35, HERMETIC SEALED, DO-35, 2 PIN |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6675 thru 1N6677
and
• 1N6677-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/610
• 0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS
• HERMETICALLY SEALED
DSB0.2A20 thru DSB0.2A40
and
• METALLURGICALLY BONDED
DSB0.5A20 thru DSB0.5A40
• DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS - 0.2 AMP DEVICES
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 0.2 AMP @T = +100°C, =3/8”
0.055 / 0.090
1.40 / 12.29
L
Derating: 8.0 mA / °C above T = +100°C, L = 3/8”
L
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
MAXIMUM
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
CAPACITANCE @
0.120 / 0.200
3.05 / 5.08
MAXIMUM FORWARD VOLTAGE
V
= 0 VOLTS
R
f =1.0 MHz
V
RWM
V
@ 20 mA
V
@ 200 mA
V
@ 630 mA
I
@ +25°C
I @ +100°C
R
C
T
F
F
F
R
VOLTS
20
VOLTS
0.37
VOLTS
0.50
VOLTS
0.70
µ A
5.0
5.0
5.0
5.0
5.0
5.0
mA
0.6
0.6
0.6
0.6
0.6
0.6
PICO FARADS
1N6675
1N6676
50
50
50
50
50
50
1.000
25.400
30
0.37
0.50
0.70
0.018 / 0.022
0.457 / 0.559
1N6677
40
0.37
0.50
0.70
DSB0.2A20
DSB0.2A30
DSB0.2A40
20
0.37
0.50
0.70
30
0.37
0.50
0.70
40
0.37
0.50
0.70
FIGURE 1
MAXIMUM RATINGS - 0.5 AMP DEVICES
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 0.5 AMP @ +75°C
Derating: 6.67 mA / °C above +75°C
DESIGN DATA
CASE: Hermetically sealed, DO-35
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
MAXIMUM
CAPACITANCE @
= 0 VOLTS
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
MAXIMUM
FORWARD VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
V
R
THERMAL RESISTANCE: (R
):
OJEC
f =1.0 MHz
250 °C/W maximum at L = .375 inch
V
RWM
V
@ 0.1A
V
@ 0.5A
I
@ +25°C
I @ +100°C
R
C
T
F
F
R
THERMAL IMPEDANCE: (Z
°C/W maximum
): 20
OJX
VOLTS
20
VOLTS
0.50
VOLTS
0.65
µ A
10.0
10.0
10.0
mA
1.0
1.0
1.0
PICO FARADS
DSB0.5A20
DSB0.5A30
DSB0.5A40
60
60
60
30
0.50
0.65
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any
40
0.50
0.65
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
79
1N6675 thru 1N6677
and
DSB0.2A20 thru DSB0.2A40
and
DSB0.5A20 thru DSB0.5A40
TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED)
10.0
1.0
DSBO.2A40
DSBO.5A40
0.1
DSBO.2A20
DSBO.5A20
0.01
DSBO.2A30
DSBO.5A30
0.001
+25
+50
+75
+100
+125
T
, JUNCTION TEMPERATURE (°C)
J
FIGURE 1
TYPICAL FORWARD VOLTAGE
100.0
10.0
1.0
0.1
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V , FORWARD VOLTAGE, INSTANTANEOUS (VOLTS)
F
FIGURE 2
80
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