1N6677UR-1 [MICROSEMI]

0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS; 0.2与0.5安培肖特基二极管
1N6677UR-1
元器件型号: 1N6677UR-1
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS
0.2与0.5安培肖特基二极管

整流二极管肖特基二极管
PDF文件: 总2页 (文件大小:49K)
下载文档:  下载PDF数据表文档文件
型号参数:1N6677UR-1参数
是否无铅 含铅
是否Rohs认证 不符合
生命周期Active
零件包装代码DO-213AA
包装说明HERMETIC SEALED, GLASS, LL34, MELF-2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
HTS代码8541.10.00.70
风险等级5.21
Is SamacsysN
其他特性METALLURGICALLY BONDED
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-213AA
JESD-30 代码O-LELF-R2
JESD-609代码e0
湿度敏感等级1
元件数量1
端子数量2
最大输出电流0.2 A
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
表面贴装YES
技术SCHOTTKY
端子面层TIN LEAD
端子形式WRAP AROUND
端子位置END
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
• 1N6677UR-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/610
• 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS
• HERMETICALLY SEALED
•LEADLESS PACKAGE FOR SURFACE MOUNT
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION
1N6677UR-1
and
CDLL6675 thru CDLL6677
and
CDLL0.2A20
thru
40
and
CDLL0.5A20 thru 40
MAXIMUM RATINGS, 0.2 AMP DEVICES
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 0.2 AMP @ TEC = +100°C
Derating: 8.0 mA / °C above +100°C
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
CDLL6675
CDLL6676
CDLL6677
CDLL0.2A20
CDLL0.2A30
CDLL0.2A40
20
30
40
20
30
40
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
IR @ +25°C
IR @ +100°C
mA
0.6
0.6
0.6
0.6
0.6
0.6
MAXIMUM
CAPACITANCE @
VR = 0 VOLTS
f =1.0 MHz
CT
PICO FARADS
50
50
50
50
50
50
MAXIMUM FORWARD VOLTAGE
VF @ 20 mA VF @ 200 mA VF @ 630 mA
VOLTS
0.37
0.37
0.37
0.37
0.37
0.37
VOLTS
0.50
0.50
0.50
0.50
0.50
0.50
VOLTS
0.70
0.70
0.70
0.70
0.70
0.70
µ
A
5.0
5.0
5.0
5.0
5.0
5.0
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
MAXIMUM RATINGS, 0.5 AMP DEVICES
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 0.5 AMP @ TEC = +75°C
Derating: 6.67 mA / °C above TEC = +75°C
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
MAXIMUM
CAPACITANCE @
VR = 0 VOLTS
f =1.0 MHz
CT
PICO FARADS
50
50
50
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
100 ÞC/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
JX): 20
ÞC/W maximum
POLARITY:
Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
MAXIMUM
FORWARD VOLTAGE
VF @ 0.1A
VOLTS
0.50
0.50
0.50
VF @ 0.5A
VOLTS
0.65
0.65
0.65
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
IR @ +25°C
IR @ +100°C
mA
1.0
1.0
1.0
µ
A
10.0
10.0
10.0
CDLL0.5A20
CDLL0.5A30
CDLL0.5A40
20
30
40
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
161
CDLL6675
CDLL0.2A20
CDLL0.5A20
10.0
thru
and
thru
and
thru
CDLL6677
CDLL0.2A40
CDLL0.5A40
TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED)
1.0
IR, REVERSE CURRENT (mA)
CDLLO.2A40
CDLLO.5A40
0.1
CDLLO.2A20
0.01
CDLLO.2A30
CDLLO.5A30
CDLLO.5A20
0.001
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 1
TYPICAL FORWARD VOLTAGE
100.0
IF, FORWARD CURRENT, INSTANTANEOUS (AMPS)
10.0
1.0
0.1
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE, INSTANTANEOUS (VOLTS)
1.1
FIGURE 2
162
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