1N6711 [MICROSEMI]
Rectifier Diode, 1 Phase, 50A, Silicon,;
| 型号： | 1N6711 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 50A, Silicon, 超快恢复二极管 快速恢复二极管 |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
1N6710, 1N6710R
1N6711, 1N6711R
Features
PRELIMINARY
·
·
·
·
·
passivated mesa structure for very low leakage currents
Hermetically sealed, low profile ceramic surface mount power package
Low package inductance
Very low thermal resistance
Available as standard polarity (strap-to-anode: 1N6710 and 1N6711) and
reverse polarity (strap-to-cathode: 1N6710R and 1N6711R)
100 and 200 Volts
40 ns, 50 Amps
ULTRAFAST
RECTIFIER
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
1N6710,R
1N6711,R
1N6710,R
1N6711,R
1N6710,R
1N6711,R
VRRM
VRWM
VR
100
200
100
200
100
Volts
Working Peak Reverse Voltage
DC Blocking Voltage
Volts
Volts
200
IF(ave)
IFSM
Tj
Tstg
qJC
50
375
-65 to +175
-65 to +175
0.65
Amps
Amps
°C
°C
°C/W
Average Rectified Forward Current, Tc£ 125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
Mechanical Outline
Sluggerä 1 (DO-217AA)
Note: Polarity symbol shown
applies to 1N6710 and 1N6711
Datasheet# MSC0xxx
1N6710, 1N6710R
1N6711, 1N6711RPRELIMINARY
Electrical Parameters
DESCRIPTION
Reverse
SYMBOL
CONDITIONS
VR= rated VR, Tc= 25°C
MIN
TYP.
.5
MAX
10
UNIT
mA
IR25
ALL
(Leakage)
Current
IR125
ALL
.15
1
mA
VR= rated VR, Tc= 125°C
Forward Voltage
pulse test,
VF1
VF2
VF3
VF4
VF5
VF6
VF7
VF8
VF9
VF10
VF11
VF12
VF
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
0.65
0.81
0.92
0.98
0.48
0.68
0.82
0.9
0.8
0.92
1.0
1.05
1.1
1.8
-
0.89
1.0
1.1
-
0.79
-
1.05
-
1.0
-
1.2
-
V
V
V
V
V
V
V
V
V
V
V
V
V
IF= 1 A, Tc= 25°C
IF= 10 A, Tc= 25°C
IF= 30 A, Tc= 25°C
IF= 50 A, Tc= 25°C
IF= 1 A, Tc= 125°C
IF= 10 A, Tc= 125°C
IF= 30 A, Tc= 125°C
IF= 50 A, Tc= 125°C
IF= 1 A, Tc= -55°C
IF= 10 A, Tc= -55°C
IF= 30 A, Tc= -55°C
IF= 50 A, Tc= -55°C
IF= 100 A, Tc= 25°C
IF= 1 A (-55°C to 125°C, ave.)
IF= 10 A (-55°C to 125°C, ave)
IF= 30 A (-55°C to 125°C, ave)
VR= 10 Vdc
pw= 300 ms
d/c£ 2%
Temperature
Coefficient of
Forward Voltage
dVF/dT
mV/°C
1.35
1
Junction
Cj1
BVR
trr
ALL
350
440
200
300
500
40
pF
Capacitance
Breakdown
Voltage
VR= 5 Vdc
IR= 100 mA, Tc= 25°C
1N6710,R
1N6711,R
ALL
100
200
V
V
ns
Reverse
IF= .5 A, IR= 1 A, IRR= .25 A
Recovery Time
相关型号：
1N6711B
Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, DO-217AA, SLUGGER PACKAGE-1
MICROSEMI
©2020 ICPDF网 联系我们和版权申明